Substrate processing apparatus

Abstract

The present invention provides a substrate processing apparatus, comprising: a processing tank for accommodating a plurality of substrates and storing a processing liquid in which the plurality of substrates are immersed; the bubbler is arranged in the processing tank, is positioned below the plurality of substrates, is immersed in the processing liquid, and is used for supplying gas to the processing liquid to form bubbles, and the bubbler comprises a gas spraying part, a plurality of gas spraying holes formed towards the plurality of substrates are formed in the upper part of the gas spraying part; the air inlet part is positioned below the air injection part and is used for conveying air to the air injection part; wherein the air inlet part is of a bent and spiral tubular structure. The gas inlet part of the bubbler is immersed in the treatment liquid, and the gas inlet part is configured to be of a bent spiral structure, so that the heat exchange area and the heat exchange time of the gas source gas and the treatment liquid are effectively increased, the temperature difference between the gas sprayed by the bubbler and the treatment liquid in the treatment tank is effectively reduced, the reaction rate and the selectivity are favorably improved, and the reaction efficiency is improved. The process quality is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing equipment, and in particular to a substrate processing device. Background Art

[0002] In the semiconductor manufacturing process, the substrate processing device can immerse multiple substrates in the processing tank, and the processing liquid can simultaneously perform process treatments such as cleaning or etching on the multiple substrates. In order to improve the uniformity of substrate liquid processing, such as substrate etching uniformity, a bubbler is usually configured in the processing tank to supply gas to the processing liquid and stir the processing liquid to promote mass transfer efficiency on the substrate surface, thereby improving the uniformity of substrate etching.

[0003] However, since the temperature of the treatment liquid is usually preferably between 140 and 180°C, the gas supplied to the treatment liquid is a normal temperature (e.g., 25°C) gas, and the temperature of the supplied gas is usually much lower than the temperature of the treatment liquid. The continuous supply of normal temperature (e.g., 25°C) gas will have a significant impact on the temperature of the treatment liquid, thereby affecting the process results. Therefore, for a treatment tank equipped with a bubbler, it is necessary to minimize the temperature difference between the gas supplied by the bubbler and the treatment liquid in the treatment tank. Summary of the invention

[0004] The technical problem to be solved by the present invention is to provide a substrate processing device capable of increasing the temperature of bubbles entering a processing tank body filled with a processing liquid.

[0005] In order to solve the above technical problems, the present invention provides a substrate processing device, comprising: a processing tank, used to accommodate multiple substrates and store processing liquid for immersing the multiple substrates; at least one bubbler, arranged in the processing tank and located below the multiple substrates, immersed in the processing liquid, and used to supply gas to the processing liquid to form bubbles, the bubbler comprising: a jet part, the upper part of the jet part has a plurality of jet holes arranged toward the multiple substrates; an air inlet part, the air inlet part is located below the jet part, and is used to transport gas to the jet part; wherein the air inlet part is a curved and spiraled tubular structure.

[0006] Preferably, the air inlet portion is a curved, spiral or Z-shaped tubular structure.

[0007] Preferably, the air injection portion includes an air injection pipe extending along an arrangement direction of the plurality of substrates, and the air injection holes are arranged along the extension direction of the air injection pipe.

[0008] Preferably, the jetting portion comprises a jet box, and the jet hole is arranged on the top of the jet box.

[0009] Preferably, an air inlet is arranged at the bottom of the air jet portion, and one end of the air inlet portion extends in a vertical direction and is connected to the air inlet.

[0010] Preferably, a bubbling box is further included, the lower part of the bubbling box is used to accommodate the air inlet part, and the upper part of the bubbling box is configured as the air jet part of the bubbler.

[0011] Preferably, it further comprises a bubbling box, the lower part of which is used to accommodate the air inlet part, the upper part of which is used to accommodate the air jet part, the top of which is open or a jet hole corresponding to the jet hole is provided on the top of the bubbling box.

[0012] Preferably, the processing tank also includes at least one liquid supply device, which is located below the multiple substrates and staggered with the bubbler; the liquid supply device has at least one liquid inlet and multiple liquid spray holes, and a liquid supply cavity is formed inside the liquid supply device, wherein the liquid inlet is used to supply the processing liquid to the liquid supply device, and the multiple liquid spray holes are set toward the multiple substrates and arranged along the arrangement direction of the multiple substrates, so as to supply the processing liquid to the processing tank.

[0013] Preferably, the liquid supplier is a liquid supply tube extending along the arrangement direction of the plurality of substrates, or the liquid supplier is a liquid supply box with the plurality of liquid spray holes arranged on the top.

[0014] Preferably, a diffusion plate extending along the arrangement direction of the liquid spray holes is arranged inside the liquid supply chamber, and the diffusion plate is located between the liquid inlet of the liquid supply device and the liquid spray holes, and the plate surface of the diffusion plate faces the liquid spray holes; the diffusion plate is provided with a plurality of diffusion holes penetrating the plate surface, and the plurality of diffusion holes are arranged along the arrangement direction of the liquid spray holes.

[0015] Preferably, the diffuser plate is arranged in a horizontal posture.

[0016] Preferably, the diffuser plate is disposed in an inclined posture, and the diffuser plate is inclined along its own extension direction.

[0017] Preferably, the diffusion hole and the liquid injection hole are staggered in the hole center direction.

[0018] Preferably, the plurality of liquid spray holes include a first liquid spray hole and a second liquid spray hole; wherein the first liquid spray hole opens vertically upward, and the second liquid spray holes are located on both sides of the first liquid spray hole and the opening direction forms an acute angle with the vertical direction.

[0019] Preferably, the distance between the first liquid spray hole and the liquid inlet is smaller than the distance between the second liquid spray hole and the liquid inlet, and the aperture of the first liquid spray hole is not larger than that of the second liquid spray hole.

[0020] Preferably, the liquid supply device is internally provided with two or more diffusion plates arranged vertically.

[0021] As described above, the present invention provides a substrate processing device having the following beneficial effects:

[0022] 1) The air inlet of the bubbler is immersed in the treatment liquid with a relatively constant temperature, and the air inlet is configured as a curved spiral structure, which effectively increases the heat exchange area and heat exchange time between the gas source gas and the treatment liquid. Therefore, the gas source gas is heated by the treatment liquid when flowing through the air inlet, effectively reducing the temperature difference between the gas ejected from the bubbler and the treatment liquid in the treatment tank, ensuring that the temperature in the treatment tank is within a suitable range, which helps to increase the reaction rate and selectivity and improve the process quality;

[0023] 2) The bubbler is equipped with a bubble box to effectively increase the bubbler's jet efficiency and jet uniformity, and reduce or even avoid the formation of a dead zone in the flow of the treatment liquid at the bend of the curved and spiraled air inlet, thereby improving the process quality;

[0024] 3) Setting the liquid supply device as a liquid supply box can effectively increase the liquid supply efficiency and uniformity of the liquid supply device. By adding a diffusion plate and an inclined second liquid spray hole inside the liquid supply device, the flow uniformity of the treatment liquid supplied by the liquid supply device to the treatment tank is further increased, and the stirring coverage range of the treatment liquid is expanded, thereby reducing the stagnant area (i.e., flow dead zone) of the treatment liquid in the treatment tank. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a schematic diagram of the whole substrate processing device in the first embodiment of the present invention;

[0026] Figure 2 The schematic diagram is a top view of a substrate processing device in the first embodiment of the present invention, wherein the substrate is omitted;

[0027] Figure 3 Display as Figure 2 A partial enlarged view of the middle A;

[0028] Figure 4 Display as Figure 2 The stereogram at A in the middle;

[0029] Figure 5 It is a schematic diagram of the whole substrate processing device in the second embodiment of the present invention;

[0030] Figure 6 Display as Figure 5 A partial enlarged view of point B in the middle;

[0031] Figure 7a Display as Figure 6 The three-dimensional schematic diagram of the center C;

[0032] Figure 7b Display as Figure 6The three-dimensional perspective view at C in the middle;

[0033] Figure 8 It is a schematic diagram showing a top view of a substrate processing device in a second embodiment of the present invention, wherein the substrate is omitted;

[0034] Fig. 9 It is a schematic diagram of the whole substrate processing device in the third embodiment of the present invention;

[0035] Fig.10 Display as Fig. 9 A partial enlarged view of point D in the middle;

[0036] Fig.11 Display as Fig.10 The three-dimensional perspective view at E in the middle;

[0037] Fig.12 It is a schematic diagram of the whole substrate processing device in the fourth embodiment of the present invention;

[0038] Fig.13 Display as Fig.12 A partial enlarged view of point F in the middle;

[0039] Fig.14 Display as Fig.13 Stereoscopic perspective view at G in the middle;

[0040] Fig.15 The schematic diagram is a top view of a substrate processing apparatus in a fourth embodiment of the present invention, wherein the substrate is omitted. DETAILED DESCRIPTION

[0041] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0042] It should be noted that the illustrations provided in this embodiment only illustrate the basic concept of the present invention in a schematic manner. Although the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation, the form, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the component layout may also be more complicated.

[0043] Embodiment 1

[0044] In the present application, a substrate processing device uses a processing liquid to perform batch processing such as cleaning or etching on multiple substrates. The type and temperature of the processing liquid are not particularly limited. For example, the processing liquid can be a cleaning liquid such as SC-1 (standard cleaning liquid No. 1), SC-2 (standard cleaning liquid No. 2), H2SO4 (sulfuric acid) for cleaning the substrate, or a rinsing liquid such as DIW (deionized water) and UPW (ultrapure water) for rinsing the substrate, or an etching liquid such as BHF (buffered hydrofluoric acid) and high-temperature phosphoric acid (H3PO4) for etching the substrate.

[0045] In this example, the phosphoric acid etching process performed by the substrate processing device is used as an example for explanation. Specifically, the substrate processing device uses a high-temperature phosphoric acid aqueous solution (temperature is about 160°C) to selectively wet-etch the silicon nitride as a masking layer on the substrate pattern surface, so as to accurately transfer the pattern on the photolithography mask to the surface of the substrate.

[0046] See also Figures 1 to 4 , Figure 1 It shows an overall schematic diagram of a substrate processing device in the first embodiment of the present invention. Figure 2 The diagram is a top view of the substrate processing apparatus in the first embodiment of the present invention, wherein the substrate 14 is omitted in order to more clearly show the internal structure. Figure 3 Display as Figure 2 A partial enlarged view of point A in the middle. Figure 4 Display as Figure 2 A three-dimensional schematic diagram at point A in the figure. The substrate processing device includes a processing tank 11 and a bubbler 12. The processing tank 11 is used to accommodate a plurality of substrates 14 arranged in a row in a horizontal direction and configured in a vertical posture and to store a processing liquid for immersing the plurality of substrates 14. The bubbler 12 is arranged in the processing tank 11, and is used to supply gas to the processing liquid to form bubbles. The height of the bubbler 12 is set so that it is immersed in the processing liquid and is located below the plurality of substrates 14 when the substrate processing device is working. The bubbler 12 includes a jet portion 121 and an air inlet portion 122. The upper portion of the jet portion 121 has a plurality of jet holes 1211 arranged upward (thus toward the plurality of substrates 14). The air inlet portion 122 is located below the jet portion 121, and is used to deliver gas to the jet portion 121. In one example, the air inlet portion 122 is a curved and spiral tubular structure.

[0047] It should be noted that, for the sake of convenience of description, in this specification, the arrangement direction of the multiple substrates 14 is defined as the X direction, the horizontal direction parallel to the substrate surface is defined as the Y direction, and the X direction and the Y direction are perpendicular, and the direction perpendicular to the plane where the X direction and the Y direction are located is defined as the Z direction.

[0048] It should be understood that in this example, a schematic diagram of the interior of the treatment tank 11 is shown, and the specific structure of the treatment tank 11 itself is not particularly limited. The treatment liquid stored in the treatment tank 11 is, for example, a phosphoric acid solution, and the temperature of the phosphoric acid solution is preferably 140°C to 180°C.

[0049] Combination Figure 1 and Figure 2 The substrate processing device in this embodiment is equipped with four bubblers 12, which are arranged horizontally along the Y direction, and the bubblers 12 are immersed in the processing liquid inside the processing tank 11. Figure 3 and Figure 4 The bubbler 12 includes two parts: an air injection part 121 and an air inlet part 122 .

[0050] In this embodiment, the air inlet 122 is a curved spiral tubular structure. In other embodiments, the air inlet 122 may also be a curved Z-shaped tubular structure or a curved spiral tubular structure of other shapes.

[0051] See also Figure 4 Further, a connecting section 1221 extending along the Z direction (i.e., the vertical direction) is provided at one end of the air inlet portion 122, and an upper end of the connecting section 1221 is connected to the air inlet of the jet portion 121. An opening 1222 is provided at the other end of the air inlet portion 122, and the opening 1222 is connected to a gas source for supplying gas.

[0052] Preferably, the air inlet of the air injection part 121 is arranged at the bottom of the air injection part 121, and the connecting section 1221 of the air injection part 122 is connected to the air inlet. In one embodiment, the air injection part 121 is an air injection pipe 121.

[0053] Continue reading Figure 4 , Figure 4 The arrows in the figure indicate the flow path of the gas in the bubbler 12. The gas supplied by the gas source enters the air inlet 122 of the bubbler 12 through the opening 1222, flows along the pipeline of the air inlet 122, and is heated by the treatment liquid when flowing through the air inlet 122. The heated gas enters the jet pipe 121 of the bubbler 12 through the connecting section 1221, and is sprayed toward the treatment liquid through the jet pipe 121 to generate bubbles. Since the air inlet 122 is immersed in the treatment liquid with a relatively constant temperature, and the air inlet 122 is in a curved spiral shape, the heat exchange area and heat exchange time between the gas supplied by the gas source and the treatment liquid are effectively increased. Therefore, the substrate processing device provided in this embodiment effectively reduces the temperature difference between the gas ejected from the bubbler 12 and the treatment liquid in the treatment tank 11, ensures that the treatment liquid in the treatment tank is within a suitable temperature range, helps to improve the reaction rate and selectivity, and improves the process quality.

[0054] Furthermore, the processing tank 11 further includes at least one liquid supplier 13, and the liquid supplier 13 has at least one liquid inlet and a plurality of liquid spray holes 1311. The liquid inlet is used to supply the processing liquid to the liquid supplier 13, and the plurality of liquid spray holes 1311 are arranged upward (thus toward the plurality of substrates 14), arranged along the arrangement direction of the plurality of substrates 14, and are used to supply the processing liquid, such as a 160° C. phosphoric acid solution, to the processing tank 11.

[0055] Specifically, in this embodiment, three liquid feeders 13 arranged along the Y direction are arranged in the processing tank 11, and the arrangement direction of the three liquid feeders 13 is perpendicular to the arrangement direction of the plurality of substrates 14. Figure 1 and Figure 2 It can be seen that the four bubblers 12 and the three liquid suppliers 13 are arranged along the Y direction, and in the Y direction, the bubblers 12 and the liquid suppliers 13 are staggered.

[0056] Preferably, the liquid supplier 13 is a liquid supply tube 13, and the liquid supply tube 13 extends along the arrangement direction of the plurality of substrates 14 (ie, the X direction). Figure 1 In this embodiment, in the Z direction, the liquid supply pipe 13 is located between the bubbler 12 and the plurality of substrates 14, and is staggered with the gas injection pipe 121. In other implementations, the liquid supply pipe 13 may also be located at the same height as the bubbler 12.

[0057] It should be understood that, depending on the spatial size of the processing tank 11 and actual process requirements, in other embodiments, the number of bubblers 12 may be more or less than four, and the number of liquid suppliers 13 may be more or less than three.

[0058] Embodiment 2

[0059] See also Figures 5 to 8 This embodiment provides a substrate processing device. Compared with the first embodiment, the difference of the second embodiment lies in that the jet part 221 of the bubbler 22 is different from the jet part 121 of the bubbler 12 of the first embodiment, and the structure of the liquid supply device 23 is different from the structure of the liquid supply device 13 of the first embodiment. The other structures are the same as those of the first embodiment and will not be repeated.

[0060] Figure 5 It is a schematic diagram of the whole substrate processing apparatus in this embodiment. Figure 6 Display as Figure 5 A partial enlarged view of point B in the middle. Figure 7a Display as Figure 6 The three-dimensional schematic diagram of the C position in the middle, Figure 7b Display as Figure 6 Stereoscopic perspective view at center C. Figure 8 The schematic diagram is a top view of the substrate processing apparatus in this embodiment, wherein the substrate 24 is omitted in order to more clearly show the internal structure.

[0061] Combination Figures 5 to 8 In this embodiment, four bubblers 22 are provided, and the four bubblers 22 are arranged horizontally along the Y direction. The height of the bubblers 22 is set so that they are immersed in the processing liquid inside the processing tank 21 when the substrate processing device is working. In this embodiment, the jet part 221 of the bubbler 22 is a flat square jet box 221. The top of the jet box 221 is provided with a jet hole 2211, and a square jet cavity 2212 is formed inside the jet box 221. The bottom of the jet box 221 is provided with an air inlet, and the upper end of the connecting section 2221 of the air inlet 222 is connected to the air inlet.

[0062] See also Figure 7a and Figure 7b , Figure 7a and Figure 7b The arrows in the figure indicate the flow path of the gas in the bubbler 22. The gas enters the curved spiral air inlet 222 through the opening 2222, enters the jet chamber 2212 through the connecting section 2221, and then is sprayed toward the processing liquid from the jet hole 2211 to generate bubbles. Compared with the jet pipe 121 in the first embodiment, the jet box 221 of this embodiment can spray gas more evenly, thereby increasing the uniformity of the process.

[0063] It should be understood that the present invention does not impose any particular limitation on the shape of the jet box 221 as long as the jet speed, pressure and uniformity are met, and a person skilled in the art can adjust the shape of the jet box 221 according to process requirements, for example, to a round box or a box of other shapes.

[0064] Preferably, compared with the first embodiment, the liquid supply device 23 in this embodiment is a liquid supply box 23, a plurality of liquid spray holes 2311 are arranged on the top of the liquid supply box 23, and a liquid supply cavity 232 is formed inside the liquid supply box 23. Specifically, in this embodiment, in the Y direction, the liquid spray holes 2311 are located in the middle of the top of the liquid spray box 23, and are arranged in a row along the Y direction. In other embodiments, the liquid spray holes 2311 can also be arranged in multiple rows along the Y direction.

[0065] In this embodiment, three liquid supply boxes 23 arranged along the Y direction are arranged in the processing tank 21, and the arrangement direction of the liquid supply boxes 23 is perpendicular to the arrangement direction of the plurality of substrates 24. Figure 5 and Figure 8 It can be seen that the four bubblers 22 and the three liquid supply boxes 23 are arranged along the Y direction, and in the Y direction, the bubblers 22 and the liquid supply boxes 23 are staggered, and the side walls of the liquid supply box 23 are close to the side walls of the jet box 221; in the Z direction, the top of the liquid supply box 23 is flush with the top of the jet box 221 of the bubbler 22, while heating the gas used to generate bubbles, eliminating the obstruction of the liquid supply box 23 to the rising and diffusion of bubbles in the solution.

[0066] It should be understood that, depending on the spatial size of the processing tank 21 and actual process requirements, in other embodiments, the number of bubblers 22 may be more or less than four, and the number of liquid supply boxes 23 may be more or less than three.

[0067] Embodiment 3

[0068] See also Figures 9 to 11 This embodiment provides a substrate processing device. Compared with the second embodiment, this embodiment is equipped with a bubbling box 323 and a diffusion plate 333 on the basis of the second embodiment. Other structures are the same as those of the second embodiment and will not be repeated.

[0069] Fig. 9 It is a schematic diagram of the whole substrate processing apparatus in this embodiment. Fig.10 Display as Fig. 9 A partial enlarged view of point D in the middle. Fig.11 Display as Fig.10 Stereoscopic perspective view at E in the middle.

[0070] This embodiment is equipped with a bubbling box 323, the lower part of which is used to accommodate the air inlet part 322, and the inner cavity shape of the lower part of the bubbling box 323 is adapted to the shape of the air inlet part 322; the upper part of the bubbling box 323 is configured as the air jet part 321 of the bubbler 32.

[0071] Specifically, combined Fig.10 and Fig.11 The upper part of the bubble box 323 is configured as the jet box 321 of the bubbler 32, and the side wall of the bubble box 323 extends downward from the jet box 321 to form an inner cavity for accommodating the air inlet 322 at the air inlet 322. Preferably, the bubble box 323 is a square box, and the material is preferably quartz.

[0072] It should be noted that the inner cavity at the lower part of the bubbling box 323 is used to accommodate the air inlet part 322, and the shape of the inner cavity at the lower part of the bubbling box 323 is adapted to the shape of the air inlet part 322, that is, the portion of the lower part of the bubbling box 323 outside the area accommodating the air inlet part 322 is a solid box body, and the outer wall of the bubbling box 323 is exposed to the treatment liquid, and the air inlet part 322 fits against the inner wall of the bubbling box 323, which is beneficial to heat exchange between the air inlet part 322 and the treatment liquid.

[0073] See also Fig.11 , Fig.11 The arrows in the figure indicate the flow path of the gas in the bubbler 32. The gas enters the curved spiral air inlet 322 through the opening 3222, enters the jet chamber 3212 through the connecting section 3221, and then is jetted to the treatment liquid from the jet hole 3211 to generate bubbles.

[0074] Since the air inlet 322 is in a curved spiral shape, if it is directly immersed in the treatment liquid, the fluidity of the treatment liquid at the bend of the air inlet 322 will deteriorate, and a flow dead zone will be easily formed, which is not conducive to the dynamic update of the treatment liquid in the treatment tank 31. In this embodiment, the bubbler 32 is accommodated in the bubble box 323, and the air inlet 322 of the bubbler 32 is in contact with the inner wall of the bubble box 323. The contact between the box body of the bubble box 323 and the treatment liquid realizes heat conduction, thereby indirectly realizing the heat exchange between the bubbler 32 and the treatment liquid. The air inlet 322 is in a curved spiral shape, which effectively increases the heat exchange area and heat exchange time between the gas supplied by the gas source and the treatment liquid, effectively reduces the temperature difference between the gas supplied by the bubbler 32 and the treatment liquid in the treatment tank 31, and ensures that the temperature in the treatment tank 31 is within a suitable temperature range, which helps to improve the reaction rate and selectivity and improve the process quality. The height of the bubbling box 323 is set so that it is immersed in the processing liquid when the substrate processing device is working. The regular shape of the bubbling box 323 greatly reduces the possibility of flow dead zones in the processing liquid.

[0075] It should be understood that the main function of the bubble box 323 is to reduce or avoid the dead zone of the process liquid flow at the bend of the air inlet 322 while ensuring that the air inlet 322 can effectively exchange heat with the process liquid. In this embodiment, the bubbler 32 and the bubble box 323 are integrally formed, and the air jet portion 321 of the bubbler 32 is itself a box-shaped air jet box 321. When the bubble box 323 is configured, the upper part of the bubble box 323 is set as the air jet box 321.

[0076] Preferably, the liquid supply device 33 in this embodiment is a liquid supply box 33. Compared with the liquid supply box 23 of the second embodiment, the size of the liquid supply box 33 in the Z direction and the X direction is the same as that of the bubbling box 323. The adjacent liquid supply boxes 33 and the bubbling boxes 323 are arranged closely, and the liquid supply box 33 and the bubbling box 323 are respectively integrally formed. The bubbler 32 and the liquid supply device 33 are both designed to be box-shaped, and each bubbling box 32 and the liquid supply box 33 are respectively integrally formed, and the air inlet 322 pipeline is designed inside the bubbling box 32, which can avoid the stagnation of the treatment liquid in the gap between the parts of the bubbler 32 and the liquid supply device 33 and can enhance the heating capacity of the gas used to generate bubbles. The liquid supply box 33 and the bubbling box 323 are at the same horizontal height, and while heating the gas in the air inlet 322, the liquid supply box 33 eliminates the obstruction of the bubbles rising and diffusing in the solution.

[0077] In other embodiments, the upper portion of the bubble box 323 can also be used to accommodate the air jet portion 321. In this case, the inner cavity shape of the upper portion of the bubble box 323 is adapted to the shape of the air jet portion 321, that is, the air inlet portion 322 and the air jet portion 321 of the bubbler 32 are both accommodated in the inner cavity of the bubble box 323. In order not to affect the air jet effect of the air jet portion 321, the top of the bubble box 323 can be set to be open or the top of the bubble box 321 can be provided with an air jet hole corresponding to the air jet hole 3211.

[0078] Furthermore, on the basis of the liquid supply box 23 in Example 2, a diffusion plate 333 extending along the arrangement direction of the spray holes 3311 is configured inside the liquid supply box 33, and the diffusion plate 333 is located between the liquid inlet of the liquid supply box 33 and the spray holes 3311, and the plate surface of the diffusion plate 333 faces the spray holes 3311; the plate surface of the diffusion plate 333 is provided with a plurality of diffusion holes 3331 penetrating the plate surface, and the plurality of diffusion holes 3331 are arranged along the arrangement direction of the spray holes 3311.

[0079] The flow rate of the treatment liquid may be different at different positions in the liquid supply chamber 332. In order to make the flow rate of the treatment liquid sprayed from the spray holes 3311 at different positions of the liquid supply box 33 more uniform, the present embodiment sets a diffusion plate 333 inside the liquid supply box 33. The treatment liquid flow supplied from the liquid inlet of the liquid supply box 33 passes through the diffusion holes 3331 of the diffusion plate 333 to be redistributed once, and then flows to the spray holes 3311, so that the liquid supply box 33 can spray liquid more uniformly.

[0080] Preferably, in order to better realize the function of the diffusion plate 333 to redistribute the processing liquid, it is necessary to avoid arranging the diffusion hole 3331 directly below the liquid injection hole 3311, that is, the hole centers of the diffusion hole 3331 and the liquid injection hole 3311 do not overlap.

[0081] It should be understood that the diffusion plate 333 does not limit the form of the liquid supply device 23. In other embodiments, such as the liquid supply pipe 13 in the first embodiment, a diffusion plate 333 may also be provided.

[0082] Preferably, in this embodiment, for the convenience of design and manufacturing, the diffuser 333 is arranged in a horizontal posture. In other embodiments, the diffuser 333 may also be arranged in an inclined posture, and the diffuser 333 is inclined along its own extension direction. Specifically, the greater the flow rate of the treatment liquid in the liquid supply chamber 332, the greater the distance between the diffuser 333 and the liquid injection hole 3311. Conversely, the smaller the flow rate of the treatment liquid in the liquid supply chamber 332, the smaller the distance between the diffuser 333 and the liquid injection hole 3311, so as to better achieve the uniform flow of the diffuser 333.

[0083] Preferably, in this embodiment, the plurality of diffusion holes 3331 are evenly distributed, and the apertures of the plurality of diffusion holes 3331 are the same. In other embodiments, the plurality of diffusion holes 3331 may be unevenly distributed, and the apertures of the plurality of diffusion holes 3331 may be not completely the same. Specifically, the greater the flow rate of the treatment liquid in the liquid supply chamber 332, the sparser the distribution of the diffusion holes 3331 and / or the smaller the aperture. Conversely, the smaller the flow rate of the treatment liquid in the liquid supply chamber 332, the denser the distribution of the diffusion holes 3331 and / or the larger the aperture, so as to better achieve the uniform flow of the diffusion plate 333.

[0084] Preferably, the plurality of diffusion holes 3331 are arranged in parallel in two symmetrical rows along the arrangement direction of the liquid spraying holes 3311. In other embodiments, the plurality of diffusion holes 3331 may also be arranged in parallel in one row or other number of rows along the arrangement direction of the liquid spraying holes 3311, and those skilled in the art may adjust according to actual needs.

[0085] It should be understood that, in the present embodiment, a diffuser plate 333 is disposed inside the liquid supply device 33. In other embodiments, in order to increase the uniformity of the liquid spray, two diffuser plates 333 arranged up and down (i.e., arranged in the Z direction) may also be disposed inside the liquid supply device 33.

[0086] Embodiment 4

[0087] See also Figures 12 to 15 This embodiment provides a substrate processing device. This embodiment is provided with a second liquid spray hole 4312 on the basis of the third embodiment. Other structures are the same as those of the third embodiment and will not be described in detail.

[0088] See also Figures 12 to 15 , Fig.12 It is a schematic diagram of the whole substrate processing apparatus in this embodiment. Fig.13 Display as Fig.12 A partial enlarged view of point F in the middle. Fig.14 Display as Fig.13 Stereoscopic perspective view at center G. Fig.15 The schematic diagram is a top view of the substrate processing apparatus in this embodiment, wherein the substrate 44 is omitted in order to more clearly show the internal structure.

[0089] The liquid supply device 43 of this embodiment includes a first liquid spray hole 4311 and a second liquid spray hole 4312. The opening direction of the first liquid spray hole 4311 is vertically upward, and the second liquid spray hole 4312 is located on both sides of the first liquid spray hole 4311 and the opening direction is at an acute angle to the vertical direction. By adding the inclined second liquid spray hole 4312, the flow uniformity of the treatment liquid supplied by the liquid supply device 43 in the treatment tank 41 is further increased, and the stirring coverage range of the treatment liquid is made larger, and the stagnation area (i.e., flow dead zone) of the treatment liquid in the treatment tank 41 is reduced. Preferably, in order to further increase the flow uniformity of the treatment liquid supplied by the liquid supply device 43 in the treatment tank 41, the first liquid spray hole 4311 is set in the middle position of the top of the liquid supply device 43, and the second liquid spray hole 4312 is symmetrically distributed on both sides of the first liquid spray hole 4311.

[0090] Preferably, in this embodiment, the first liquid spray hole 4311 is closer to the liquid inlet than the second liquid spray hole 4312. Therefore, in order to increase the flow uniformity of the treatment liquid supplied by the liquid supplier 43 in the treatment tank 41, the aperture of the first liquid spray hole 4311 is smaller than the aperture of the second liquid spray hole 4312. In other embodiments, a person skilled in the art can adjust the apertures of the first liquid spray hole 4311 and the second liquid spray hole 4312 according to the difference in the distances of the first liquid spray hole 4311 and the second liquid spray hole 4312 relative to the liquid inlet.

[0091] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A substrate processing device, characterized in that: include: A processing tank, used to accommodate a plurality of substrates and store a processing liquid for immersing the plurality of substrates; At least one bubbler is disposed in the processing tank and is located below the plurality of substrates, immersed in the processing liquid, and is used to supply gas to the processing liquid to form bubbles, wherein the bubbler comprises: An air injection portion, wherein an upper portion of the air injection portion has a plurality of air injection holes disposed toward the plurality of substrates; An air inlet portion, the air inlet portion is located below the air jet portion and is used to transport gas to the air jet portion; Wherein, the air inlet portion is a curved and spiraled tubular structure.

2. The substrate processing device according to claim 1, characterized in that: The air inlet is a curved, spiral or Z-shaped tubular structure.

3. The substrate processing device according to claim 1, characterized in that: The gas injection portion includes a gas injection pipe extending along an arrangement direction of the plurality of substrates, and the gas injection holes are arranged along the extension direction of the gas injection pipe.

4. The substrate processing device according to claim 1, characterized in that: The jetting portion comprises a jet box, and the jet hole is arranged on the top of the jet box.

5. The substrate processing apparatus according to claim 1, wherein: An air inlet is arranged at the bottom of the air jet portion, and one end of the air inlet portion extends in a vertical direction and is connected to the air inlet.

6. The substrate processing apparatus according to any one of claims 1 to 5, characterized in that: It further comprises a bubbling box, the lower part of which is used to accommodate the air inlet part, and the upper part of which is configured as the air jet part of the bubbler.

7. The substrate processing apparatus according to any one of claims 1 to 5, characterized in that: It further comprises a bubbling box, the lower part of which is used to accommodate the air inlet part, the upper part of which is used to accommodate the air jet part, the top of which is open or the top of which is provided with an air jet hole corresponding to the air jet hole.

8. The substrate processing apparatus according to claim 1, wherein: The processing tank also includes at least one liquid supply device, which is located below the multiple substrates and staggered with the bubbler; the liquid supply device has at least one liquid inlet and multiple liquid spray holes, and a liquid supply cavity is formed inside the liquid supply device, wherein the liquid inlet is used to supply the processing liquid to the liquid supply device, and the multiple liquid spray holes are set toward the multiple substrates and arranged along the arrangement direction of the multiple substrates, and are used to supply the processing liquid to the processing tank.

9. The substrate processing device according to claim 8, characterized in that: The liquid supplier is a liquid supply pipe extending along the arrangement direction of the plurality of substrates, or the liquid supplier is a liquid supply box with the plurality of liquid spray holes arranged on the top.

10. The substrate processing apparatus according to claim 9, wherein: A diffusion plate extending along the arrangement direction of the liquid spray holes is arranged inside the liquid supply chamber, the diffusion plate is located between the liquid inlet of the liquid supply device and the liquid spray holes, and the plate surface of the diffusion plate faces the liquid spray holes; the diffusion plate is provided with a plurality of diffusion holes penetrating the plate surface, and the plurality of diffusion holes are arranged along the arrangement direction of the liquid spray holes.

11. The substrate processing apparatus according to claim 10, wherein: The diffusion plate is arranged in a horizontal posture.

12. The substrate processing apparatus according to claim 10, wherein: The diffuser plate is arranged in an inclined posture, and the diffuser plate is inclined along its own extending direction.

13. The substrate processing apparatus according to claim 10, wherein: The diffusion hole and the liquid injection hole are staggered in the hole center direction.

14. The substrate processing apparatus according to claim 10, wherein: The plurality of liquid spray holes include a first liquid spray hole and a second liquid spray hole; wherein the first liquid spray hole opens vertically upward, and the second liquid spray holes are located on both sides of the first liquid spray hole and the opening direction forms an acute angle with the vertical direction.

15. The substrate processing apparatus according to claim 14, wherein: The distance between the first liquid spray hole and the liquid inlet is smaller than the distance between the second liquid spray hole and the liquid inlet, and the aperture of the first liquid spray hole is not larger than that of the second liquid spray hole.

16. The substrate processing apparatus according to claim 10, wherein: The liquid supply device is internally provided with two or more diffusion plates arranged up and down.

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