SiC epitaxial substrate conveying method

Abstract

The invention relates to the technical field of semiconductors, in particular to a SiC epitaxial substrate conveying method, which comprises the following steps of: performing independent positioning and edge searching on a wafer, a graphite ring and a graphite ring by adopting an edge finder, a deviation rectifying platform and a merging and splitting module, and finishing merging and splitting of the graphite ring and the wafer or a graphite disc by adopting the merging and splitting module and a manipulator. The manipulator transfers the combined wafer, graphite ring and graphite disc to an epitaxial growth environment; according to the invention, the wafer, the graphite ring and the graphite disc can independently finish edge finding and deviation rectification, the manipulator executes fixed actions of grabbing or placing the wafer, the graphite ring or the graphite disc, the graphite ring and the wafer or the graphite disc can be accurately combined or separated, accurate positioning of the wafer is realized, and the working efficiency is improved. And the wafer, the graphite ring and the graphite disc which are combined are integrally transferred to an epitaxial growth environment through a manipulator, so that the wafer processing quality is ensured.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a SiC epitaxial substrate conveying method. Background Art

[0002] Generally, a semiconductor device manufacturing process is performed by repeatedly performing a plurality of unit processes, such as an exposure process, an etching process, a diffusion process, a deposition process, and a metal process on a wafer, and the wafer loaded on a carrier within the facility is introduced or taken out by a wafer transfer device.

[0003] The wafer transfer device is equipped with a robot that supports the wafer at the front end of the arm. The wafer is transferred while being supported by the robot. The wafer is supported by a carrier during transfer, which facilitates the smooth loading of the wafer into the epitaxial device. However, there are errors in the installation of the wafer and the carrier, making it difficult to ensure the positioning accuracy of the wafer and the processing quality. Summary of the invention

[0004] In view of the deficiencies in the prior art, the present invention provides a SiC epitaxial substrate conveying method, in which the wafer, graphite ring and graphite disk can independently complete edge finding and deviation correction, the graphite ring and wafer or graphite disk can be accurately merged or split, and the wafer can be smoothly placed in an epitaxial growth environment, thereby ensuring the wafer processing quality.

[0005] In order to solve the above technical problems, the present invention adopts the following technical solutions:

[0006] A SiC epitaxial substrate transfer method comprises the following steps:

[0007] S01, an edge finder is provided, the edge finder is provided with a first positioning reference, and the edge finder performs edge finding and deviation correction on the wafer according to the first positioning reference to determine the position and angle of the wafer;

[0008] S02, a deviation correction platform is provided, the deviation correction platform is provided with a second positioning reference, and the deviation correction platform performs edge finding and deviation correction on the graphite disk according to the second positioning reference to determine the position and angle of the graphite disk;

[0009] S03, a merging and splitting module is provided, the merging and splitting module is provided with a third positioning reference, and the merging and splitting module performs edge finding and deviation correction on the graphite ring according to the third positioning reference to determine the position and angle of the graphite ring;

[0010] S04, using a robot to grab the wafer and place it in a merging and splitting module, so that the center position and the bevel direction of the wafer and the graphite ring are consistent, and the merging and splitting module is used to merge the wafer and the graphite ring;

[0011] S05, using a manipulator to grab the graphite disk and place it in a merging and splitting module so that the center position and the hypotenuse direction of the graphite disk and the graphite ring are consistent, using the merging and splitting module to merge the graphite disk and the graphite ring, and using a manipulator to place the merged wafer, graphite ring and graphite disk into an epitaxial growth environment;

[0012] S06, using a robot to take out the wafer, graphite ring and graphite disk in a merged state from the epitaxial growth environment and place them in a merge and split module;

[0013] S07, using a merging and splitting module to separate the graphite disc from the graphite ring, and using a manipulator to place the graphite disc on the deviation correction platform to find the edge, so that the graphite ring is supported on the merging and splitting module;

[0014] S08. In step S07, a loading box is provided, a merging and splitting module is used to separate the wafer from the graphite ring, and a robot is used to load the wafer separated from the graphite ring into the loading box;

[0015] S09. In step S07, a disk-ring placement box for storing a combination of graphite rings and graphite disks is provided, a robot is used to load the graphite disk at the deviation correction platform into a merging and splitting module, the merging and splitting module is used to merge the graphite disk and the graphite ring, and a robot is used to load the merged graphite disk and graphite ring into the disk-ring placement box.

[0016] Wherein, the manipulator is used to grab or place a wafer, a graphite ring or a graphite disk;

[0017] When the wafer, graphite ring and graphite disk are combined, the robot grabs or places the graphite disk to realize the overall transfer of the wafer, graphite ring and graphite disk;

[0018] When the wafer and the graphite ring are combined, the robot grabs or places the graphite ring to achieve the overall transfer of the wafer and the graphite ring;

[0019] When the graphite ring and the graphite disk are combined, the robot grabs or places the graphite disk to realize the overall transfer of the graphite ring and the graphite disk.

[0020] Wherein, in step S02, a correction platform is used to find the edge of the graphite disk, the correction platform includes a correction platform, a correction driving mechanism connected to the correction platform, a correction ring light source and a correction collector, the correction driving mechanism is used to drive the correction platform to move along the X-axis and the Y-axis, and make the correction platform rotate, the correction ring light source is located between the correction platform and the correction collector, and the correction collector corresponds to the correction ring light source;

[0021] When the graphite disk is finding its edge, the robot grabs the graphite disk and places it on the deflection correction table, which supports the graphite disk. The deflection correction ring light source provides supplementary light for the graphite disk. The deflection correction collector takes visual photos to determine the position and angle of the graphite disk. The deflection correction drive mechanism drives the deflection correction table to move along the X-axis and / or Y-axis according to the data obtained by the deflection correction collector, and makes the deflection correction table rotate, so that the graphite disk determines its own position and angle according to the second positioning reference.

[0022] Wherein, in step S03, the merging and splitting module includes a base frame, a plurality of ring brackets connected to the top of the base frame, a tray and a lifting mechanism, the ring brackets are distributed around the base frame, the lifting mechanism is drivingly connected to the tray, the base frame is penetrated with movable openings at the top and bottom, the output end of the lifting mechanism is penetrated through the movable opening, and the lifting mechanism drives the tray to move up and down, so that the tray moves up and down inside the ring bracket;

[0023] When the graphite disc needs to be separated from the graphite ring, the lifting mechanism drives the tray to move upward to the required height, the manipulator puts the combination of the graphite disc and the graphite ring into the merging and splitting module, the ring bracket and the tray support the graphite ring and the graphite disc respectively, and the lifting mechanism drives the tray to move downward, so that the graphite disc moves downward synchronously with the tray to be separated from the graphite ring.

[0024] The merging and splitting module further includes a detaching and splitting driving mechanism, a detaching and splitting ring light source, a surface light source and a collection device. The detaching and splitting driving mechanism is used to drive the base frame to move along the X-axis and the Y-axis and to make the base frame rotate. The detaching and splitting ring light source is located between the base frame and the surface light source. The front end of the collection device passes through the surface light source and corresponds to the detaching and splitting ring light source.

[0025] When the graphite ring is edge-finding, the ring bracket supports the graphite ring, the surface light source and the detachable ring light source provide supplementary light for the graphite ring and the acquisition device, the acquisition device visually takes pictures to determine the position and angle of the graphite ring, and the detachable drive mechanism drives the base frame to move along the X-axis and / or Y-axis according to the data obtained by the acquisition device, and makes the base frame rotate, and adjusts the position and angle of the ring bracket and the graphite ring, so that the graphite ring determines its own position and angle according to the third positioning reference;

[0026] When the wafer needs to be merged with the graphite ring, the ring bracket supports the graphite ring that has been edged, and the lifting mechanism drives the tray to move upward inside the graphite ring to the required height. The robot puts the wafer into the tray so that the center position and the hypotenuse direction of the wafer and the graphite ring are consistent. The lifting mechanism descends and drives the wafer to descend synchronously, so that the wafer is supported by the graphite ring, thereby achieving the merging of the wafer and the graphite ring.

[0027] Among them, the disassembling and assembling driving mechanism includes a disassembling and assembling X-axis module, a disassembling and assembling Y-axis module drivingly connected to the disassembling and assembling X-axis module, and a disassembling and assembling rotating unit drivingly connected to the disassembling and assembling Y-axis module. The disassembling and assembling X-axis module drives the disassembling and assembling Y-axis module to move along the X-axis, and the disassembling and assembling Y-axis module drives the disassembling and assembling rotating unit to move along the Y-axis. The disassembling and assembling rotating unit is drivingly connected to the base frame, and the disassembling and assembling rotating unit is used to drive the base frame to rotate. The disassembling and assembling rotating unit is installed with a shield, and the shield is penetrated with mounting openings above and below, and the output end of the lifting mechanism is penetrated through the mounting opening.

[0028] The deflection correction driving mechanism includes a deflection correction X-axis module, a deflection correction Y-axis module drivingly connected to the deflection correction X-axis module, and a deflection correction rotation unit drivingly connected to the deflection correction Y-axis module, wherein the deflection correction X-axis module drives the deflection correction Y-axis module to move along the X-axis, and the deflection correction Y-axis module drives the deflection correction rotation unit to move along the Y-axis, and the deflection correction rotation unit is drivingly connected to the deflection correction table, and the deflection correction rotation unit is used to drive the deflection correction table to rotate;

[0029] When the graphite disk and the graphite ring need to be merged, the manipulator places the graphite disk on the deflection correction table, the deflection correction drive mechanism drives the deflection correction table to move along the X and / or Y axis, and drives the deflection correction table to rotate, so that the graphite disk determines its own position and angle according to the second positioning reference, the merging and splitting module performs edge finding and deflection correction on the graphite ring, the manipulator grabs the graphite disk and places it on the merging and splitting module, so that the center position and hypotenuse direction of the graphite ring and the graphite disk are consistent, and the merging and splitting module merges the graphite disk with the graphite ring.

[0030] Wherein, the ring bracket is provided with a ring supporting opening, and when the ring bracket supports the graphite ring, the bottom outer edge of the graphite ring extends into the ring supporting opening.

[0031] Among them, the bottom end of the graphite ring is provided with an annular disk accommodating groove, and when the graphite disk and the graphite ring are combined, the top outer edge of the graphite disk extends into the disk accommodating groove, and the top end of the graphite ring is provided with an annular sheet accommodating groove, and when the wafer and the graphite ring are combined, the bottom outer edge of the wafer extends into the sheet accommodating groove.

[0032] Wherein, in step S09, a cleaning mechanism is also provided;

[0033] When the graphite disk and graphite ring need to be cleaned, the manipulator puts the graphite ring and graphite disk in a combined state into the cleaning mechanism, the cleaning mechanism removes dust adhering to the graphite disk and graphite ring, and the manipulator transfers the graphite disk and graphite ring in the cleaning mechanism to the disk and ring placement box.

[0034] Beneficial effects of the present invention:

[0035] In actual application, after the center position and bevel direction of the wafer are determined by the edge finder, they will no longer undergo secondary adjustment by the correction platform, merging and splitting module or robot. The correction platform and the merging and splitting module also use independent edge finding for the positioning and edge finding of their respective graphite disks and graphite rings. The wafer, graphite ring and graphite disk can all independently complete edge finding and correction. The robot only needs to perform fixed actions of grabbing or placing the wafer, graphite ring or graphite disk, and can accurately merge or split the graphite ring with the wafer or graphite disk to achieve precise wafer positioning. The merged wafer, graphite ring and graphite disk are transferred as a whole to the epitaxial growth environment by the robot to ensure the wafer processing quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 It is a schematic diagram of the three-dimensional structure of the SiC epitaxial substrate transfer method of the present invention.

[0037] Figure 2 This is a schematic diagram of the structure when the graphite ring and graphite disk are combined.

[0038] Figure 3 Schematic diagram of the exploded structure with wafer, graphite ring and graphite disk.

[0039] Figure 4 Schematic diagram of the three-dimensional structure of the correction platform Figure 1 .

[0040] Figure 5 This is a schematic diagram of the positional relationship between the tray, graphite ring and ring bracket before the wafer and graphite ring are combined.

[0041] Figure 6 It is a schematic diagram of the three-dimensional structure of the merged and split modules.

[0042] Figure 7 Schematic diagram of the exploded structure of the disassembly and assembly drive mechanism.

[0043] Figure 8 It is a three-dimensional diagram showing the graphite ring, graphite disk and the combined split module separated.

[0044] Fig. 9 Schematic diagram of the three-dimensional structure of the correction platform Figure 2 .

[0045] Fig.10 It is a structural schematic diagram of the separation of the graphite ring and the ring bracket.

[0046] Fig.11 Schematic diagram of the local structure when the graphite ring is separated from the graphite disk.

[0047] Fig.12 This is a three-dimensional image of the wafer and graphite ring when separated.

[0048] Fig.13It is a schematic diagram of the three-dimensional structure of the cleaning mechanism and the robot.

[0049] 01. Wafer; 02. Graphite ring;

[0050] 021, disc receiving groove; 022, sheet receiving groove; 03, graphite disc;

[0051] 1. Loading box; 2. Manipulator; 3. Edge finder;

[0052] 4. Correction platform;

[0053] 41. Deviation correction platform; 42. Deviation correction driving mechanism;

[0054] 421, deviation correction X-axis module; 422, deviation correction Y-axis module; 423, deviation correction rotation unit; 43, deviation correction ring light source; 44, deviation correction collector;

[0055] 5. Merge and split modules;

[0056] 51, bottom frame; 511, movable opening; 52, ring bracket; 521, supporting ring opening;

[0057] 53. Tray; 54. Lifting mechanism; 55. Disassembly and assembly drive mechanism;

[0058] 551, disassembling and assembling the X-axis module; 552, disassembling and assembling the Y-axis module; 553, disassembling and assembling the rotating unit; 5531, protective cover; 5532, installation port;

[0059] 56. Disassembled ring light source; 57. Surface light source; 58. Collection equipment;

[0060] 6. Disk ring placement box; 7. Cleaning mechanism. DETAILED DESCRIPTION

[0061] To facilitate understanding by those skilled in the art, the present invention is further described below in conjunction with examples and drawings. Specific implementation methods of the present invention will be described below. It should be pointed out that in the specific description of these implementation methods, in order to provide a concise description, this specification cannot provide a detailed description of all features of the actual implementation methods.

[0062] refer to Figures 1 to 13 As shown, the present invention provides a SiC epitaxial substrate transfer method, comprising the following steps:

[0063] S01, an edge finder 3 is provided, and the edge finder 3 is provided with a first positioning reference. The edge finder 3 performs edge finding and deviation correction on the wafer 01 according to the first positioning reference to determine the position and angle of the wafer 01. Specifically, the first positioning reference has been determined by debugging before the edge finder 3 works. The position and angle of the wafer 01 can be accurately determined by the first positioning reference. When the position and angle of the wafer 01 coincide with the position and angle of the first positioning reference, the edge finding of the wafer 01 is completed. The edge finding of the wafer 01 can be completed independently, thereby improving the edge finding efficiency of the wafer 01.

[0064] S02, a deviation correction platform 4 is provided, and the deviation correction platform 4 is provided with a second positioning reference. The deviation correction platform 4 performs edge finding and deviation correction on the graphite disk 03 according to the second positioning reference to determine the position and angle of the graphite disk 03. Specifically, the second positioning reference has been determined by debugging before the deviation correction platform 4 works. When the position and angle of the graphite disk 03 coincide with the position and angle of the second positioning reference, the edge finding of the graphite disk 03 is completed;

[0065] S03, a merging and splitting module 5 is provided, and the merging and splitting module 5 is provided with a third positioning reference. The merging and splitting module 5 performs edge finding and deviation correction on the graphite ring 02 according to the third positioning reference to determine the position and angle of the graphite ring 02. Specifically, the third positioning reference has been determined by debugging before the merging and splitting module 5 works. When the position and angle of the graphite ring 02 coincide with the position and angle of the third positioning reference, the edge finding of the graphite ring 02 is completed;

[0066] S04, using the robot 2 to grab the wafer 01 and place it in the merging and splitting module 5, so that the center position and the hypotenuse direction of the wafer 01 and the graphite ring 02 are consistent, and the merging and splitting module 5 is used to merge the wafer 01 and the graphite ring 02;

[0067] S05, using the manipulator 2 to grab the graphite disk 03 and place it in the merging and splitting module 5, so that the center position and the hypotenuse direction of the graphite disk 03 and the graphite ring 02 are consistent, using the merging and splitting module 5 to merge the graphite disk 03 and the graphite ring 02, and using the manipulator 2 to place the merged wafer 01, graphite ring 02 and graphite disk 03 into the epitaxial growth environment;

[0068] S06, using the robot 2 to take out the wafer 01, graphite ring 02 and graphite disk 03 in a merged state from the epitaxial growth environment and place them in the merging and splitting module 5;

[0069] S07, using the merging and splitting module 5 to separate the graphite disk 03 from the graphite ring 02, and using the manipulator 2 to place the graphite disk 03 on the deviation correction platform 4 to find the edge, so that the graphite ring 02 is supported on the merging and splitting module 5;

[0070] S08. In step S07, a loading box 1 is provided, and a merging and splitting module 5 is used to separate the wafer 01 from the graphite ring 02, and a robot 2 is used to load the wafer 01 separated from the graphite ring 02 into the loading box 1;

[0071] S09. In step S07, a disk-ring placement box 2 for storing a combination of graphite rings 02 and graphite disks 03 is provided, and the graphite disk 03 at the deviation correction platform 4 is loaded into the merging and splitting module 5 by the robot 2, and the graphite disk 03 and graphite ring 02 are merged by the merging and splitting module 5, and the merged graphite disk 03 and graphite ring 02 are loaded into the disk-ring placement box 2 by the robot 2.

[0072] In actual application, after the center position and bevel direction of wafer 01 are determined by edge finder 3, they will no longer undergo secondary adjustment by deflection correction platform 4, merging and splitting module 5 or robot 2. Deflection correction platform 4 and merging and splitting module 5 also use independent edge finding for positioning and edge finding of their respective graphite disks 03 and graphite rings 02. Wafer 01, graphite ring 02 and graphite disk 03 can all independently complete edge finding and deflection correction, thereby effectively eliminating the installation error of wafer 01 and improving the positioning accuracy of wafer 01. Robot 2 performs fixed actions of grabbing or placing wafer 01, graphite ring 02 or graphite disk 03. Yes, it is convenient to quickly complete the splitting and merging actions between the graphite ring 02 and the wafer 01 or the graphite disk 03, save a lot of reference calibration time between the edge finder 3, the correction platform 4 and the merging and splitting module 5, and reduce the calculation complexity of the equipment, so that the present application can achieve high-precision positioning through a pre-set positioning reference. Finally, the merged wafer 01, graphite ring 02 and graphite disk 03 are transferred as a whole to the epitaxial growth environment through the robot 2, and the wafer 01 that has been cultured in the epitaxial growth environment is successfully taken out, thereby improving the positioning accuracy of the wafer 01 and ensuring the processing quality of the wafer 01.

[0073] refer to Figure 1 As shown, in this embodiment, the robot 2 is used to grab or place the wafer 01, the graphite ring 02 or the graphite disk 03; when the wafer 01, the graphite ring 02 and the graphite disk 03 are combined, the robot 2 grabs or places the graphite disk 03 to achieve the overall transfer of the wafer 01, the graphite ring 02 and the graphite disk 03; when the wafer 01 and the graphite ring 02 are combined, the robot 2 grabs or places the graphite ring 02 to achieve the overall transfer of the wafer 01 and the graphite ring 02; when the graphite ring 02 and the graphite disk 03 are combined, the robot 2 grabs or places the graphite disk 03 to achieve the overall transfer of the graphite ring 02 and the graphite disk 03.

[0074] refer to Figure 1 , 4As shown, in this embodiment, in step S02, a deflection correction platform 4 is used to find the edge of the graphite disk 03, and the deflection correction platform 4 includes a deflection correction platform 41, a deflection correction driving mechanism 42 connected to the deflection correction platform 41, a deflection correction ring light source 43 and a deflection correction collector 44, wherein the deflection correction driving mechanism 42 is used to drive the deflection correction platform 41 to move along the X-axis and the Y-axis, and to make the deflection correction platform 41 rotate, and the deflection correction ring light source 43 is located between the deflection correction platform 41 and the deflection correction collector 44, and the deflection correction collector 44 corresponds to the deflection correction ring light source 43; in actual application, the manipulator 2 grabs the graphite disk 03 and places it on the deflection correction platform 41, and supports the graphite disk 03 through the deflection correction platform 41, and the deflection correction ring light source 43 The graphite disk 03 is supplemented with light, and the correction collector 44 takes visual photos to determine the position and angle of the graphite disk 03. The correction drive mechanism 42 drives the correction platform 41 to move along the X-axis and / or Y-axis according to the data obtained by the correction collector 44, and makes the correction platform 41 rotate, so that the graphite disk 03 determines its own position and angle according to the second positioning reference, so as to achieve accurate edge finding of the graphite disk 03; specifically, after the correction platform 4 finds the edge of the graphite disk 03, the position and angle information of the graphite disk 03 is not transmitted to the manipulator 2 and the merging and splitting module 5, and the manipulator 2 can realize the taking and placing of the graphite disk 03 by using a fixed grasping or placing action, so as to smoothly achieve the individual edge finding of the graphite disk 03.

[0075] refer to Figure 5 , 8 As shown, in this embodiment, in step S03, the merging and splitting module 5 includes a base frame 51, a plurality of ring brackets 52 connected to the top of the base frame 51, a tray 53 and a lifting mechanism 54, the ring brackets 52 are distributed around the base frame 51, the lifting mechanism 54 is drivingly connected to the tray 53, the base frame 51 is penetrated by a movable opening 511 from top to bottom, the output end of the lifting mechanism 54 is penetrated by the movable opening 511, the lifting mechanism 54 drives the tray 53 to move up and down, so that the tray 53 moves up and down on the inner side of the ring bracket 52, so that the tray 53 moves up and down on the inner side of the ring bracket 52, the structure is compact, and space occupancy is saved.

[0076] In actual application, the lifting mechanism 54 is a pneumatic cylinder, an oil cylinder or an electric cylinder. When the graphite disk 03 needs to be separated from the graphite ring 02, the lifting mechanism 54 drives the tray 53 to move upward to the required height, and the manipulator 2 puts the combination of the graphite disk 03 and the graphite ring 02 into the merging and splitting module 5. The ring bracket 52 and the tray 53 support the graphite ring 02 and the graphite disk 03 respectively. The lifting mechanism 54 drives the tray 53 to move downward, so that the graphite disk 03 moves downward synchronously with the tray 53 to be separated from the graphite ring 02.

[0077] refer to Figure 6As shown, in this embodiment, the merging and splitting module 5 also includes a merging and splitting driving mechanism 55, a merging and splitting ring light source 56, a surface light source 57 and a collection device 58. The merging and splitting driving mechanism 55 is used to drive the base frame 51 to move along the X-axis and the Y-axis, and to make the base frame 51 rotate. The merging and splitting ring light source 56 is located between the base frame 51 and the surface light source 57. The front end of the collection device 58 passes through the surface light source 57 and corresponds to the merging and splitting ring light source 56.

[0078] refer to Figure 5 , 6 As shown, in actual application, the graphite ring 02 is supported by the ring bracket 52, the surface light source 57 and the detachable ring light source 56 are used to supplement the light for the graphite ring 02 and the acquisition device 58, the acquisition device 58 visually takes pictures to determine the position and angle of the graphite ring 02, and the detachable driving mechanism 55 drives the base frame 51 to move along the X-axis and / or the Y-axis according to the data obtained by the acquisition device 58, and makes the base frame 51 rotate, and adjusts the position and angle of the ring bracket 52 and the graphite ring 02, so that the graphite ring 02 determines its own position and angle according to the third positioning reference;

[0079] In actual application, when it is necessary to merge the wafer 01 and the graphite ring 02, the ring bracket 52 supports the graphite ring 02 that has been edge-finished, and the lifting mechanism 54 drives the tray 53 to move upward to the required height on the inner side of the graphite ring 02, and the robot 2 puts the wafer 01 into the tray 53. The robot 2 fixes the grabbing and placing actions of the wafer 01, which is conducive to quickly and accurately completing the wafer 01 placement, so that the center position and the hypotenuse direction of the wafer 01 and the graphite ring 02 are consistent, and the wafer 01 and the graphite ring 02 complete the edge-finding according to their respective first positioning reference and third positioning reference, which means that the edge-finding is completed, so that the edge-finding of the wafer 01 and the graphite ring 02 are performed independently, and the subsequent wafer 01 and the graphite ring 02 can be quickly merged in the merging and splitting module 5 after the robot 2 grabs them, and then the lifting mechanism 54 descends to drive the wafer 01 to descend synchronously, so that the wafer 01 is supported by the graphite ring 02, and the wafer 01 and the graphite ring 02 are merged.

[0080] refer to Figure 7As shown, in this embodiment, the disassembly and assembly driving mechanism 55 includes a disassembly and assembly X-axis module 551, a disassembly and assembly Y-axis module 552 drivingly connected to the disassembly and assembly Y-axis module 551, and a disassembly and assembly rotating unit 553 drivingly connected to the disassembly and assembly Y-axis module 552. The disassembly and assembly X-axis module 551 drives the disassembly and assembly Y-axis module 552 to move along the X-axis, and the disassembly and assembly Y-axis module 552 drives the disassembly and assembly rotating unit 553 to move along the Y-axis. The disassembly and assembly rotating unit 553 is drivingly connected to the base frame 51, and the disassembly and assembly rotating unit 553 is used to drive the base frame 51 to rotate. The disassembly and assembly rotating unit 553 is installed with a shield 5531, and the shield 5531 is penetrated by an installation opening 5532 from top to bottom. The output end of the lifting mechanism 54 is arranged through the installation opening 5532, and the front end of the lifting mechanism 54 is hidden in the shield 5531, which has a compact structure and saves space.

[0081] refer to Fig. 9As shown, in this embodiment, the deflection correction driving mechanism 42 includes a deflection correction X-axis module 421, a deflection correction Y-axis module 422 driven and connected to the deflection correction X-axis module 421, and a deflection correction rotation unit 423 driven and connected to the deflection correction Y-axis module 422. The deflection correction X-axis module 421 and the deflection correction Y-axis module 422 are linear motors, oil cylinders or electric cylinders. The deflection correction X-axis module 421 drives the deflection correction Y-axis module 422 to move along the X-axis, and the deflection correction Y-axis module 422 drives the deflection correction rotation unit 423 to move along the Y-axis. The rotation unit 423 is a servo motor or a driving motor, and the deflection correction rotation unit 423 is connected to the deflection correction table 41. The deflection correction rotation unit 423 is used to drive the deflection correction table 41 to rotate, smoothly drive the deflection correction table 41 to move along the X-axis and / or the Y-axis, and realize the self-rotation of the deflection correction table 41; when it is necessary to merge the graphite disk 03 with the graphite ring 02, the manipulator 2 places the graphite disk 03 on the deflection correction table 41, and the deflection correction driving mechanism 42 drives the deflection correction table 41 to move along the X-axis and / or the Y-axis, and drives the deflection correction table 41 to rotate, so that the graphite disk 03 and the graphite ring 02 are combined. The ink disk 03 determines its own position and angle according to the second positioning reference, and the merging and splitting module 5 performs edge finding and deviation correction on the graphite ring 02. Specifically, after the deviation correction platform 4 finds the edge of the graphite disk 03, the position and angle information of the graphite disk 03 is not transmitted to the manipulator 2, the merging and splitting module 5 or the edge finder 3. Moreover, after the merging and splitting module 5 finds the edge of the graphite ring 02, the edge finding and positioning of the graphite ring 02 is completed, and the position and angle information of the graphite ring 02 is not transmitted to the manipulator 2, the deviation correction platform 4 or the edge finder 3. The manipulator 2 adopts a fixed The graphite disk 03 can be taken and placed by a grabbing or placing action, and the individual edge finding of the graphite disk 03 can be smoothly realized. Then the robot 2 grabs the graphite disk 03 and places it on the merging and splitting module 5, so that the center position and the hypotenuse direction of the graphite ring 02 and the graphite disk 03 are consistent. The merging and splitting module 5 merges the graphite disk 03 with the graphite ring 02. Since the process of merging the graphite disk 03 with the graphite ring 02 is performed after the wafer 01 and the graphite ring 02 are merged, the merging of the wafer 01, the graphite ring 02 and the graphite disk 03 is successfully completed.

[0082] refer to Fig.10 As shown, in this embodiment, the ring bracket 52 is provided with a ring supporting opening 521. When the ring bracket 52 supports the graphite ring 02, the bottom outer edge of the graphite ring 02 extends into the ring supporting opening 521, and the graphite ring 02 is supported by the ring supporting opening 521, which facilitates the positioning of the graphite ring 02.

[0083] refer to Fig.11 As shown, in this embodiment, the bottom end of the graphite ring 02 is provided with an annular disk accommodating groove 021. When the graphite disk 03 is combined with the graphite ring 02, the top outer edge of the graphite disk 03 extends into the disk accommodating groove 021, and part of the graphite disk 03 is hidden in the graphite ring 02. The structure is compact, space is saved, and the graphite disk 03 is accurately positioned on the graphite ring 02. Fig.12 As shown, the top of the graphite ring 02 is provided with an annular sheet accommodating groove 022. When the wafer 01 and the graphite ring 02 are combined, the bottom outer edge of the wafer 01 extends into the sheet accommodating groove 022, so that part of the wafer 01 is hidden in the graphite ring 02. The structure is compact, space is saved, and it is beneficial for the wafer 01 to be accurately positioned in the graphite ring 02.

[0084] refer to Fig.13 As shown, in this embodiment, in step S09, a cleaning mechanism 7 is also provided, and the cleaning mechanism 7 is an ultrasonic cleaning machine; when the graphite disk 03 and the graphite ring 02 need to be cleaned, the manipulator 2 puts the graphite ring 02 and the graphite disk 03 in a combined state into the cleaning mechanism 7, and first removes the dust adhering to the graphite disk 03 and the graphite ring 02 through the cleaning mechanism 7 to ensure that the graphite ring 02 and the graphite disk 03 are clean and tidy, and then the manipulator 2 transfers the graphite disk 03 and the graphite ring 02 in the cleaning mechanism 7 to the disk-ring placement box 6, which is conducive to the recycling of the graphite ring 02 and the graphite disk 03.

[0085] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. Although the present invention is disclosed as a preferred embodiment as above, it is not used to limit the present invention. Any technician familiar with the profession can make some changes or modifications to equivalent embodiments of equivalent changes by using the technical contents disclosed above without departing from the scope of the technical solution of the present invention. However, any simple modification, equivalent changes and modifications made to the above embodiments according to the technology of the present invention are within the scope of the technical solution of the present invention without departing from the content of the technical solution of the present invention.

Claims

1. A SiC epitaxial substrate transfer method, characterized in that: The following steps are involved: S01, an edge finder (3) is provided, the edge finder (3) is provided with a first positioning reference, and the edge finder (3) performs edge finding and deviation correction on the wafer (01) according to the first positioning reference to determine the position and angle of the wafer (01); S02, a deviation correction platform (4) is provided, the deviation correction platform (4) is provided with a second positioning reference, and the deviation correction platform (4) performs edge finding and deviation correction on the graphite disk (03) according to the second positioning reference to determine the position and angle of the graphite disk (03); S03, a merging and splitting module (5) is provided, the merging and splitting module (5) is provided with a third positioning reference, and the merging and splitting module (5) performs edge finding and deviation correction on the graphite ring (02) according to the third positioning reference to determine the position and angle of the graphite ring (02); S04, using a robot (2) to grab the wafer (01) and place it on a merging and splitting module (5) so that the center position and the hypotenuse direction of the wafer (01) and the graphite ring (02) are consistent, and using the merging and splitting module (5) to merge the wafer (01) and the graphite ring (02); S05, using a manipulator (2) to grab the graphite disk (03) and place it in a merging and splitting module (5), so that the center position and the hypotenuse direction of the graphite disk (03) and the graphite ring (02) are consistent, using the merging and splitting module (5) to merge the graphite disk (03) and the graphite ring (02), and using the manipulator (2) to place the merged wafer (01), the graphite ring (02) and the graphite disk (03) into an epitaxial growth environment; S06, using a robot (2) to take out the wafer (01), graphite ring (02) and graphite disk (03) in a merged state from the epitaxial growth environment and place them in a merging and splitting module (5); S07, using a merging and splitting module (5) to separate the graphite disk (03) from the graphite ring (02), and using a manipulator (2) to place the graphite disk (03) on a deviation correction platform (4) to find the edge, so that the graphite ring (02) is supported on the merging and splitting module (5); S08. In step S07, a loading box (1) is provided, a merging and splitting module (5) is used to separate the wafer (01) from the graphite ring (02), and a robot (2) is used to load the wafer (01) separated from the graphite ring (02) into the loading box (1); S09. In step S07, a disk-ring storage box (6) for storing a combination of a graphite ring (02) and a graphite disk (03) is provided, a manipulator (2) is used to load the graphite disk (03) at the deviation correction platform (4) into the merging and splitting module (5), the merging and splitting module (5) is used to merge the graphite disk (03) and the graphite ring (02), and the manipulator (2) is used to load the merged graphite disk (03) and the graphite ring (02) into the disk-ring storage box (6).

2. The SiC epitaxial substrate transfer method according to claim 1, characterized in that: The robot (2) is used to grab or place a wafer (01), a graphite ring (02) or a graphite disk (03); When the wafer (01), the graphite ring (02) and the graphite disk (03) are combined, the robot (2) grabs or places the graphite disk (03) to achieve the overall transfer of the wafer (01), the graphite ring (02) and the graphite disk (03); When the wafer (01) and the graphite ring (02) are combined, the robot (2) grabs or places the graphite ring (02) to achieve the overall transfer of the wafer (01) and the graphite ring (02); When the graphite ring (02) and the graphite disk (03) are combined, the robot (2) grabs or places the graphite disk (03) to achieve the overall transfer of the graphite ring (02) and the graphite disk (03).

3. The SiC epitaxial substrate transfer method according to claim 2, characterized in that: In step S02, a deflection correction platform (4) is used to find the edge of the graphite disk (03), wherein the deflection correction platform (4) comprises a deflection correction platform (41), a deflection correction driving mechanism (42) connected to the deflection correction platform (41), a deflection correction annular light source (43) and a deflection correction collector (44), wherein the deflection correction driving mechanism (42) is used to drive the deflection correction platform (41) to move along the X-axis and the Y-axis and to make the deflection correction platform (41) rotate, wherein the deflection correction annular light source (43) is located between the deflection correction platform (41) and the deflection correction collector (44), and the deflection correction collector (44) corresponds to the deflection correction annular light source (43); When the graphite disk (03) is edge finding, the robot (2) grabs the graphite disk (03) and places it on the deflection correction table (41), and the graphite disk (03) is supported by the deflection correction table (41). The deflection correction ring light source (43) provides supplementary light for the graphite disk (03). The deflection correction collector (44) visually photographs to determine the position and angle of the graphite disk (03). The deflection correction drive mechanism (42) drives the deflection correction table (41) to move along the X-axis and / or the Y-axis according to the data obtained by the deflection correction collector (44), and causes the deflection correction table (41) to rotate, so that the graphite disk (03) determines its own position and angle according to the second positioning reference.

4. The SiC epitaxial substrate transfer method according to claim 1, characterized in that: In step S03, the merging and splitting module (5) comprises a base frame (51), a plurality of ring brackets (52) connected to the top of the base frame (51), a tray (53) and a lifting mechanism (54), wherein the ring brackets (52) are distributed around the base frame (51), the lifting mechanism (54) is drivingly connected to the tray (53), the base frame (51) is penetrated by a movable opening (511) at the top and bottom, the output end of the lifting mechanism (54) is penetrated by the movable opening (511), and the lifting mechanism (54) drives the tray (53) to move up and down, so that the tray (53) moves up and down inside the ring bracket (52); When it is necessary to separate the graphite disk (03) from the graphite ring (02), the lifting mechanism (54) drives the tray (53) to move upward to a required height, the manipulator (2) places the combination of the graphite disk (03) and the graphite ring (02) into the merging and splitting module (5), the ring bracket (52) and the tray (53) respectively support the graphite ring (02) and the graphite disk (03), and the lifting mechanism (54) drives the tray (53) to move downward, so that the graphite disk (03) moves downward synchronously with the tray (53) and is separated from the graphite ring (02).

5. The SiC epitaxial substrate transfer method according to claim 4, characterized in that: The merging and splitting module (5) further comprises a detaching and splitting driving mechanism (55), a detaching and splitting annular light source (56), a surface light source (57) and a collection device (58); the detaching and splitting driving mechanism (55) is used to drive the base frame (51) to move along the X-axis and the Y-axis and to make the base frame (51) rotate; the detaching and splitting annular light source (56) is located between the base frame (51) and the surface light source (57); and the front end of the collection device (58) passes through the surface light source (57) and corresponds to the detaching and splitting annular light source (56); When the graphite ring (02) is edge-finding, the ring bracket (52) supports the graphite ring (02), the surface light source (57) and the detachable annular light source (56) provide supplementary light for the graphite ring (02) and the collection device (58), the collection device (58) visually photographs to determine the position and angle of the graphite ring (02), and the detachable driving mechanism (55) drives the base frame (51) to move along the X-axis and / or the Y-axis according to the data obtained by the collection device (58), and causes the base frame (51) to rotate, and adjusts the position and angle of the ring bracket (52) and the graphite ring (02), so that the graphite ring (02) determines its own position and angle according to the third positioning reference; When it is necessary to merge the wafer (01) and the graphite ring (02), the ring bracket (52) supports the graphite ring (02) that has been edged, the lifting mechanism (54) drives the tray (53) to move upward to a required height inside the graphite ring (02), and the robot (2) places the wafer (01) into the tray (53) so that the center positions and hypotenuse directions of the wafer (01) and the graphite ring (02) are consistent, and the lifting mechanism (54) descends to drive the wafer (01) to descend synchronously, so that the wafer (01) is supported by the graphite ring (02), thereby realizing the merging of the wafer (01) and the graphite ring (02).

6. The SiC epitaxial substrate transfer method according to claim 5, characterized in that: The disassembly and assembly driving mechanism (55) comprises a disassembly and assembly X-axis module (551), a disassembly and assembly Y-axis module (552) drivingly connected to the disassembly and assembly X-axis module (551), and a disassembly and assembly rotating unit (553) drivingly connected to the disassembly and assembly Y-axis module (552); the disassembly and assembly X-axis module (551) drives the disassembly and assembly Y-axis module (552) to move along the X-axis; the disassembly and assembly Y-axis module (552) drives the disassembly and assembly rotating unit (553) to move along the Y-axis; the disassembly and assembly rotating unit (553) is drivingly connected to the base frame (51); the disassembly and assembly rotating unit (553) is used to drive the base frame (51) to rotate; the disassembly and assembly rotating unit (553) is installed with a protective cover (5531); the protective cover (5531) is penetrated with an installation opening (5532) at the top and bottom; and the output end of the lifting mechanism (54) is arranged through the installation opening (5532).

7. The SiC epitaxial substrate transfer method according to claim 3, characterized in that: The deflection correction driving mechanism (42) comprises a deflection correction X-axis module (421), a deflection correction Y-axis module (422) drivingly connected to the deflection correction X-axis module (421), and a deflection correction rotation unit (423) drivingly connected to the deflection correction Y-axis module (422); the deflection correction X-axis module (421) drives the deflection correction Y-axis module (422) to move along the X-axis; the deflection correction Y-axis module (422) drives the deflection correction rotation unit (423) to move along the Y-axis; the deflection correction rotation unit (423) is drivingly connected to the deflection correction platform (41); and the deflection correction rotation unit (423) is used to drive the deflection correction platform (41) to rotate. When it is necessary to merge the graphite disk (03) and the graphite ring (02), the manipulator (2) places the graphite disk (03) on the deflection correction table (41), the deflection correction drive mechanism (42) drives the deflection correction table (41) to move along the X and / or Y axis, and drives the deflection correction table (41) to rotate, so that the graphite disk (03) determines its own position and angle according to the second positioning reference, the merging and splitting module (5) performs edge search and deflection correction on the graphite ring (02), the manipulator (2) grabs the graphite disk (03) and places it on the merging and splitting module (5), so that the center position and hypotenuse direction of the graphite ring (02) and the graphite disk (03) are consistent, and the merging and splitting module (5) merges the graphite disk (03) and the graphite ring (02).

8. The SiC epitaxial substrate transfer method according to claim 4, characterized in that: The ring bracket (52) is provided with a ring supporting opening (521), and when the ring bracket (52) supports the graphite ring (02), the bottom outer edge of the graphite ring (02) extends into the ring supporting opening (521).

9. The SiC epitaxial substrate transfer method according to claim 1, characterized in that: The bottom end of the graphite ring (02) is provided with an annular disk accommodating groove (021); when the graphite disk (03) is combined with the graphite ring (02), the top outer edge of the graphite disk (03) extends into the disk accommodating groove (021); the top end of the graphite ring (02) is provided with an annular sheet accommodating groove (022); when the wafer (01) is combined with the graphite ring (02), the bottom outer edge of the wafer (01) extends into the sheet accommodating groove (022).

10. The SiC epitaxial substrate transfer method according to claim 1, characterized in that: In step S09, a cleaning mechanism (7) is also provided; When the graphite disk (03) and the graphite ring (02) need to be cleaned, the manipulator (2) places the graphite ring (02) and the graphite disk (03) in a combined state into a cleaning mechanism (7), the cleaning mechanism (7) removes dust adhering to the graphite disk (03) and the graphite ring (02), and the manipulator (2) transfers the graphite disk (03) and the graphite ring (02) in the cleaning mechanism (7) to a disk and ring placement box (6).

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