Molding compound trench to facilitate package singulation

Abstract

The invention relates to a molding compound trench to facilitate package singulation. In an example, a semiconductor package (600) includes a semiconductor die having a device side in which circuitry is formed, and a conductive terminal (412) coupled to the device side of the semiconductor die. The package also includes a molding compound (402) covering the semiconductor die and at least a portion of the conductive terminals, wherein the conductive terminals are exposed to an exterior of the molding compound. The molding compound has a top surface and a bottom surface and lateral sides extending between the top surface and the bottom surface. The lateral side includes a first surface (408) that contacts the top surface and extends vertically from the top surface toward the bottom surface. The lateral side also includes a second surface (406) that contacts the first surface and extends horizontally away from the semiconductor die. The lateral side also includes a third surface (602) that contacts and extends from the second surface to contact the bottom surface. The third surface has physical indicia caused by a singular process. The first surface and the second surface do not have physical indicia caused by a singular process.

Description

Technical Field

[0001] The present application relates generally to semiconductor packaging and, more particularly, to molding compound trenches to facilitate package singulation. Background Art

[0002] Semiconductor chips are usually housed inside semiconductor packages, which protect the chips from harmful environmental influences such as heat, moisture and debris. The packaged chip communicates with electronic devices such as leads outside the package via conductive components exposed to the package surface. Within the package, the chip can be electrically coupled to the conductive components using any suitable technology. One such technology is flip chip technology, in which the semiconductor chip (also referred to as a "bare die") is flipped so that the device side of the chip (wherein the circuit system is formed) faces downward. The device side is coupled to the conductive components using, for example, solder bumps. Another technology is wire bonding technology, in which the device side of the semiconductor chip is oriented upward and is coupled to the conductive components using bonding wires. Molding material covers various components of each chip, such as parts of the bare die, wire bonding parts and leads. Summary of the invention

[0003] In an example, a semiconductor package includes: a semiconductor die having a device side formed with a circuit system; and a conductive terminal coupled to the device side of the semiconductor die. The package also includes a molding compound covering at least a portion of the semiconductor die and the conductive terminal, wherein the conductive terminal is exposed to the outside of the molding compound. The molding compound has a top surface and a bottom surface and a lateral side extending between the top surface and the bottom surface. The lateral side includes a first surface, the first surface contacts the top surface and extends vertically from the top surface toward the bottom surface. The lateral side also includes a second surface, the second surface contacts the first surface and extends horizontally away from the semiconductor die. The lateral side also includes a third surface, the third surface contacts the second surface and extends from the second surface to contact the bottom surface. The third surface has a physical mark caused by a singulation process. The first surface and the second surface do not have a physical mark caused by the singulation process.

[0004] In an example, a method for manufacturing a semiconductor package includes: coupling a plurality of semiconductor dies to a plurality of die pads of a high-density lead frame; coupling each of the plurality of semiconductor dies to a conductive terminal of the high-density lead frame; positioning the high-density lead frame and the semiconductor dies in a mold sleeve, the mold sleeve having a protrusion positioned between consecutive ones of the plurality of die pads; causing a molding compound to cover the semiconductor dies in the mold sleeve and flow under the protrusions in the mold sleeve, wherein a portion of the molding compound covering the semiconductor dies is thicker than a portion of the molding compound between the semiconductor dies; removing the high-density lead frame from the mold sleeve; trimming the high-density lead frame; and singulating the plurality of semiconductor dies covered by the molding compound from each other to produce a semiconductor package, wherein the singulation is performed by using a tool to cut through the portion of the molding compound between the semiconductor dies. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] Figure 1 A flow chart of a process for fabricating a semiconductor package using molding compound trenches to facilitate package singulation according to various examples.

[0006] Figure 2A is a perspective view of a lead frame with a semiconductor die coupled thereto according to various examples.

[0007] Figure 2B is a top view of a lead frame with a semiconductor die coupled thereto according to various examples.

[0008] Figure 2C is a cross-sectional view of a lead frame with a semiconductor die coupled thereto according to various examples.

[0009] Figure 2D is a cross-sectional view of a lead frame with a semiconductor die coupled thereto according to various examples.

[0010] Figure 3A A mold sleeve member configured to form molding compound grooves that facilitate package singulation according to various examples.

[0011] Figure 3B 1 is a top view of a mold sleeve component configured to form molding compound grooves that facilitate package singulation according to various examples.

[0012] Figure 3C is a cross-sectional view of a mold sleeve member configured to form molding compound grooves that facilitate package singulation according to various examples.

[0013] Figure 3D is a cross-sectional view of a mold sleeve member configured to form molding compound grooves that facilitate package singulation according to various examples.

[0014] Figure 3E is a bottom view of a mold sleeve component configured to form molding compound grooves that facilitate package singulation according to various examples.

[0015] Figure 4A is a perspective view of a mold sleeve component configured to form a molding compound trench that facilitates package singulation, the molding compound trench being lowered onto a lead frame having a semiconductor die coupled thereto, according to various examples.

[0016] Figure 4B is a perspective view of a mold sleeve component configured to form a molding compound trench that facilitates package singulation, the molding compound trench being lowered onto a lead frame having a semiconductor die coupled thereto, according to various examples.

[0017] Figure 4C is a perspective view of a mold assembly for forming molding compound grooves on a lead frame having a semiconductor die coupled thereto that facilitate package singulation according to various examples.

[0018] Figure 4D is a perspective view of a mold assembly for forming molding compound grooves on a lead frame having a semiconductor die coupled thereto that facilitate package singulation according to various examples.

[0019] Figure 5A is a perspective view of a lead frame strip covered by a molding compound having grooves that facilitate package singulation according to various examples.

[0020] Figure 5B is a top view of a lead frame strip covered by a molding compound having grooves that facilitate package singulation according to various examples.

[0021] Figure 5C is a cross-sectional view of a lead frame strip covered by a molding compound having grooves that facilitate package singulation according to various examples.

[0022] Figure 5D is a cross-sectional view of a lead frame strip covered by a molding compound having grooves that facilitate package singulation according to various examples.

[0023] Fig. 6A 2 is a perspective view of a package that has been singulated from a molding compound strip using molding compound grooves that facilitate package singulation according to various examples.

[0024] Figure 6B 1 is a top view of a package that has been singulated from a molding compound strip using molding compound trenches that facilitate package singulation according to various examples.

[0025] Figure 6C2 is a cross-sectional view of a package that has been singulated from a molding compound strip using molding compound trenches that facilitate package singulation according to various examples.

[0026] Fig.6D 2 is a cross-sectional view of a package that has been singulated from a molding compound strip using molding compound trenches that facilitate package singulation according to various examples.

[0027] Fig. 6E A bottom view of a package that has been singulated from a molding compound strip using molding compound grooves that facilitate package singulation according to various examples.

[0028] Fig. 7A 2 is a perspective view of a package that has been singulated from a molding compound strip using molding compound grooves that facilitate package singulation according to various examples.

[0029] Figure 7B 1 is a top view of a package that has been singulated from a molding compound strip using molding compound trenches that facilitate package singulation according to various examples.

[0030] Figure 7C 2 is a cross-sectional view of a package that has been singulated from a molding compound strip using molding compound trenches that facilitate package singulation according to various examples.

[0031] Fig.7D 2 is a cross-sectional view of a package that has been singulated from a molding compound strip using molding compound trenches that facilitate package singulation according to various examples.

[0032] Fig. 7E A bottom view of a package that has been singulated from a molding compound strip using molding compound grooves that facilitate package singulation according to various examples.

[0033] Fig. 8A is an example of a molding compound surface with at least some physical evidence of a mechanical sawing process.

[0034] Figure 8B is an example of a molding compound surface with at least some physical evidence of the laser sawing process. DETAILED DESCRIPTION

[0035] During the semiconductor package manufacturing process, different semiconductor dies may be coupled to different die pads on a lead frame strip, with each die coupled to a separate die pad. The die may be coupled to the leads of the lead frame strip, for example, by wire bonding or welding. The entire lead frame strip may then be positioned inside a mold sleeve, and a molding compound may be injected into the mold sleeve, thereby covering the lead frame strip containing the different semiconductor dies and their corresponding die pads with the molding compound. The resulting structure is a molding compound "strip" containing a lead frame strip having multiple die pads and multiple semiconductor dies therein, as well as their corresponding wire bonds, solder bumps, etc. The strip is then singulated to produce individual semiconductor packages. Strip singulation may be performed, for example, using a laser saw or a mechanical saw.

[0036] The main challenge in the package manufacturing process is to increase the throughput. Mechanical saws are cumbersome and slow in singulating the molding plastic strips to produce individual packages. Laser saws are significantly more efficient than mechanical saws, but the molding plastic strips are often too thick to accommodate the laser saws. Therefore, the manufacturing throughput remains suboptimal.

[0037] In some cases, the aforementioned challenges are exacerbated. For example, some leadframe designs are considered "high density" leadframes, meaning that a leadframe of a given length or area can produce a much larger number of packages than can be produced by other non-high density leadframe designs. As used herein, a high density leadframe is a leadframe in which the die pad occupies greater than 50% of the total area of ​​the leadframe. However, due to the limitations of manufacturing throughput described above, the potential of such high density leadframes is not fully realized.

[0038] The present disclosure describes various examples of semiconductor package manufacturing processes that alleviate the technical challenges described above. Specifically, the process described herein requires the use of a mold sleeve that is specifically structured to form molding compound grooves between each pair of consecutive dies (or die pads) in a lead frame strip. When the lead frame strip is removed from the mold sleeve, the resulting molding compound strip does not have a uniform thickness, but rather contains a series of grooves along its length. These grooves are areas of molding compound that are thin enough for a laser saw to cut effectively and efficiently. Therefore, by using such a mold sleeve to form molding compound grooves, a laser saw becomes available to single-part molding compound strips to produce individual packages, which significantly increases manufacturing throughput. Even if a mechanical saw is used instead of a laser saw, cutting through the thinner molding compound will cause reduced wear on the mechanical saw and improve slitting efficiency. The process described herein and the semiconductor package produced by the process therefore represent a specific technical solution to a specific technical challenge. These increases in manufacturing throughput are particularly effective in the case of high-density lead frames, because the more efficient process described herein can help fully realize the high throughput potential of such high-density lead frames. Examples described herein may also present various other benefits, such as reduced molding compound usage.An example of the process and example packages produced by the process are now described with reference to the drawings.

[0039] Figure 1A flow chart of a process 100 for manufacturing a semiconductor package using molding compound grooves to facilitate package singulation according to various examples. The process 100 includes positioning a lead frame strip in a mold sleeve (102). The lead frame strip may include one or more rows and / or one or more columns of die pads connected to each other by leads, tie bars, barrier bars, etc. The lead frame strip may include copper or any other suitable metal or alloy. The semiconductor die may be positioned on the die pads, for example, using a die attach layer. The semiconductor die may be coupled to the leads by means of wire bonds, solder bumps, etc. Figure 2A is a perspective view of an example lead frame strip 200 having a plurality of columns 202, 204, and 206. In an example, tens, dozens, hundreds, or thousands of columns may be included in the lead frame strip 200. A semiconductor die 208 is coupled to a die pad of the lead frame strip 200. Additional components, such as wire bonds, may also be included. Figure 2B is a top view of a lead frame strip 200 according to various examples. Figure 2C is a cross-sectional view of a lead frame strip 200 according to various examples. Figure 2D is a cross-sectional view of a lead frame strip 200 according to various examples.

[0040] Figure 3A The mold sleeve member 300 is configured to form a molding compound groove that facilitates package singulation according to various examples. The mold sleeve member 300 includes a main body 301 and a plurality of gripping members 302 extending from above the top surface of the main body 301 and through the main body 301. The gripping members can be used to enable a manufacturing machine (e.g., a robot arm) to grip the mold sleeve member 300. The mold sleeve member 300 includes a lead cavity 304, so that when the mold sleeve member 300 is lowered onto the lead frame strip 200, the lead cavity 304 cooperates with the lead on the lead frame strip 200 and provides proper alignment between the lead frame strip 200 and the mold sleeve member 300. The mold sleeve assembly 300 also includes a die cavity 306, so that when the mold sleeve assembly 300 is lowered onto the lead frame strip 200, the die cavity 306 cooperates with the semiconductor die 208 on the lead frame strip 200 and provides proper alignment between the lead frame strip 200 and the mold sleeve assembly 300. Without the lead cavity 304 and the die cavity 306, the mold sleeve assembly 300 cannot be fully lowered onto the lead frame strip 200, and therefore, molding compound cannot be injected into the mold sleeve. The presence of the lead cavity 304 and the die cavity 306 provides a space in which the leads and the die 208 of the lead frame strip 200 can be accommodated, thus facilitating proper alignment between the mold sleeve assembly 300 and the lead frame strip 200 and facilitating proper molding compound injection.

[0041] The example mold assembly 300 may include a groove protrusion 308. The groove protrusion is suitable for forming the molding compound groove described herein. As explained, the molding compound below the groove is thinner than the other portions of the molding compound strip formed after the molding compound is injected over the lead frame strip, and therefore it is easier to saw through the molding compound below the groove than to saw through the thicker portion of the molding compound strip. The groove protrusion 308, and therefore the resulting molding compound groove, may have any suitable shape. In some examples, two or more lateral sides of the groove protrusion 308 may be angled to produce a wedge-shaped molding compound groove, but the scope of the present disclosure is not limited in this regard. The trench protrusions 308 should be sized to produce a molding compound thickness below the trench of between 500 microns and 1000 microns, where the trench protrusions producing a molding compound thickness below this range is disadvantageous because it can prevent proper molding compound flow (e.g., causing voiding challenges), and where the trench protrusions producing a molding compound thickness above this range is disadvantageous because increased manufacturing throughput and / or increased machine saw life is not achieved. In an example, the gripping features 302 extend through the trench protrusions 308 and extend below the bottom surface of the trench protrusions 308, but the scope of the present disclosure is not limited in this regard. The gripping features 302 (also referred to as posts) prevent mold flash during the molding compound application process by adding a downward force on the lead frame die pad. Figure 3B is a top view of a mold assembly 300 according to various examples. Figure 3C is a cross-sectional view of a mold assembly 300 according to various examples. Figure 3D is a cross-sectional view of a mold assembly 300 according to various examples. Figure 3E is a bottom view of a mold assembly 300 according to various embodiments.

[0042] Figure 4A 4 is a perspective view of a lead frame strip 200 positioned in a mold sleeve and more specifically positioned on a bottom mold sleeve component 401. The mold sleeve component 300 is positioned above the lead frame strip 200. The process 100 includes lowering the mold sleeve component onto the lead frame strip 200 to mate with the lead frame strip 200 (104), such as Figure 4B As shown in FIG. 1 , the process 100 further includes injecting a molding compound into the mold housing to cover the lead frame strip 200 and all components coupled thereto with the molding compound ( 106 ), as shown in FIG. Figure 4C The injected molding compound may flow throughout the mold sleeve, for example, by covering the semiconductor die 208, flowing under the protrusion 308, and flowing around the section 310 of the gripping member 302 extending under the protrusion 308. The mold sleeve is then opened, as shown in FIG. Figure 4D , and the molded lead frame strip (also referred to as molding compound strip) is removed from the mold housing ( 108 ). Figure 5A4 is a perspective view of the resulting molding compound strip 400. The molding compound strip 400 is a lead frame strip 200 covered by molding compound. The molding compound portion 402 covers the corresponding semiconductor die 208. Each pair of consecutive molding compound portions 402 is separated by a molding compound groove 404. The groove 404 is formed by the groove protrusion 308 described above. Each groove 404 includes a surface 406, a surface 408, and a cavity 410 extending through the surfaces 406 and 408. The thickness of the molding compound below the groove 404 (i.e., below the surface 406) is within the range described above and is significantly thinner than the molding compound portion 402. In some examples, the surface 408 is vertical and is orthogonal to the top surface of the molding compound portion 402 and the surface 406. In some examples, the surface 408 is vertical and is inclined, such as Figure 5A In some examples, surface 406 is not present, meaning that surfaces 408 of a particular groove 404 converge with each other. Leads 412 extend from molding compound strip 400 as shown. Figure 5B is a top view of a molding compound strip 400 according to various examples. Figure 5C is a cross-sectional view of a molding compound strip 400 according to various examples. Figure 5D is a cross-sectional view of a molding compound strip 400 according to various examples.

[0043] although Figure 1 It is not explicitly shown in FIG, but a trimming process may be performed to trim leads, barrier bars, tie bars, etc. The process 100 then includes sawing the molded lead frame strip (ie, molding compound strip 400) into individual semiconductor packages (110). Fig. 6A 6 is a perspective view of a package 600 that has been singulated from a molding compound strip 400 using molding compound grooves that facilitate package singulation according to various examples. Example package 600 includes a molding compound portion 402 to contain a semiconductor die 208. Package 600 includes surfaces 408 on opposite sides of molding compound portion 402. Package 600 includes surfaces 406 on opposite sides of molding compound portion 402. Package 600 includes surfaces 602 on opposite sides of molding compound portion 402. Surface 408 contacts a top surface of package 600; surface 406 contacts corresponding surface 408; surface 602 contacts corresponding surface 406; and surface 406 contacts a bottom surface of package 600. Cavity 410 extends from the top surface of molding compound portion 402 and extends through the thickness of package 600 and coincides with surfaces 408, 406, and 602. Cavity 410 includes curved walls 604 and a bottom surface including metal portion 606 and molding compound portion 608. Leads 412 extend from opposite ends of package 600 , as shown.

[0044] In examples, surface 408 is not orthogonal to surface 406, and in other examples, surface 408 is orthogonal to surface 406. The height of surface 602 represents the thickness of the molding compound that the laser saw or mechanical saw must cut through, and a critical range for this height (which is less than the height of package 600) and the consequences of exceeding this range and falling below this range are provided above. The bottom surface (i.e., the bottom surface) of cavity 410 coincides with a horizontal plane that is above the bottom surface of package 600 and below the horizontal plane where surface 406 lies.

[0045] The length of the cavity 410 along the length of the surfaces 602, 406, 408 and the top surface of the molding compound portion 402 is variable. The greater the length of this cavity 410, the less molding compound must be cut during singulation of the molding compound strip 400. This in turn results in less wear on the mechanical saw, and this results in greater throughput for both the mechanical saw and the laser saw. However, the length of this cavity 410 is less than 1000 microns, where lengths above this range are disadvantageous because they can reveal bond lines that would otherwise be covered by the molding compound.

[0046] Surface 602 bears physical marks that evidence a singulation process such as a laser or mechanical sawing process. These physical marks are produced when a laser saw or mechanical saw is applied to the molding compound strip 400 to singulate the molding compound strip 400. When the semiconductor package molding compound is singulated by a mechanical saw, the process may leave physical evidence on the sidewalls of the molding compound. Physical evidence of mechanical saw singulation may include sawing marks. These marks are typically straight lines or grooves caused by the movement of the mechanical saw blade as the mechanical saw blade cuts through the molding compound. The evidence may also include break lines or cracks on the sidewalls of the molding compound. These are formed due to stress applied during the sawing process as the mechanical saw cuts through the material. The evidence may also include flaking or delamination of the molding compound on the sidewalls. This may occur when the cutting action is not smooth or when the molding compound has certain properties that make it easier to flake. The evidence may also include a rough or uneven surface, which is a result of the removal of material by the saw blade, which may produce an irregular surface. The evidence may further include residues or particles of the molding compound left on the sidewalls or around the edges. These particles may be byproducts of the cutting process. The evidence may also include discoloration caused by the heat generated during the sawing process. This discoloration may be seen as a darkening or change in the appearance of the material. Fig. 8A is an example of a molding compound surface with at least some physical evidence of a mechanical sawing process.

[0047] When semiconductor package molding compound is singulated by laser sawing, the process may leave physical evidence on the sidewalls of the molding compound. The evidence may include narrow and well-defined laser saw cuts, which are areas where material has been removed to separate individual semiconductor packages. The evidence may include a heat-affected zone (HAZ) around the cut edge. Due to the localized heat generated by the laser, this area may appear slightly different in color or texture. In some cases, the laser cutting process may result in a slight taper or tilting of the sidewalls. This effect is more common when cutting through thicker molding compound layers. The evidence may include microcracks or fracture lines on the sidewalls. These are not as obvious as those found in mechanical sawing. The evidence may include resolidified material, which occurs due to localized melting and cooling caused by the laser. The evidence may include minimal charring caused by the laser. Figure 8B is an example of a molding compound surface with at least some physical evidence of the laser sawing process.

[0048] Figure 6B is a top view of a package 600 according to various examples. Figure 6C is a cross-sectional view of a package 600 according to various examples. Fig.6D is a cross-sectional view of a package 600 according to various examples.

[0049] Fig. 6E 600 according to various examples. As shown, the bottom surface 607 of the package 600 includes a die pad 609. The die pad 609 is exposed to the outside of the package 600 through the bottom surface 607. In an example, the die pad 609 is coupled to one or more of the leads 412, but the scope of the present disclosure is not limited thereto. The edge 611 of the die pad 609 is within 0.5 mm from the closest edge of the bottom surface 607 (e.g., the edge shared by the bottom surface 607 and the surface 602). The die pad 609 may have a plurality of such edges 611. Each such edge 611 is vertically aligned with the corresponding cavity 410, which means that the vertical axis 610 extends through the edge 611 and its corresponding cavity 410, as shown. As a result, the board level reliability (BLR) stress on the edge 611 is reduced, thereby mitigating the risk of mechanical instability (e.g., solder cracks).

[0050] In some examples, package 600 has a surface 408 that extends vertically from a top surface of package 600 to a bottom surface of package 600. In some examples, surface 408 is orthogonal to the top and bottom surfaces of package 600, and in other examples, surface 408 is angled relative to the top and bottom surfaces of package 600. Fig. 7A 7 is a perspective view of a package 700 that has been singulated from a molding compound strip using molding compound trenches that facilitate package singulation according to various examples. Fig. 7A The package 700 with Fig. 6A4 is identical to package 600 of FIG. 4, except that surface 408 extends from the top surface of package 700 to the bottom surface of package 700. The trench protrusion 308 used to form the molding compound trench that produces surface 408 will have a triangular prism shape. Figure 7B Based on various examples Fig. 7A A top view of package 700 is shown. Figure 7C Based on various examples Fig. 7A A cross-sectional view of package 700 is shown. Fig.7D Based on various examples Fig. 7A A cross-sectional view of package 700 is shown. Fig. 7E Based on various examples Fig. 7A A bottom view of package 700 is shown.

[0051] In this description, the term "coupled" may encompass connections, communications, or signal paths that enable a functional relationship consistent with this description. For example, if device A generates a signal to control device B to perform an action, then: (a) in a first instance, device A is coupled to device B through a direct connection; or (b) in a second instance, device A is coupled to device B through an intermediate component C, provided that the intermediate component C does not change the functional relationship between device A and device B, so that device B is controlled by device A via the control signal generated by device A.

[0052] In this specification, unless otherwise specified, "about", "approximately" or "substantially" preceding a parameter means within the range of + / -10% of the parameter. Modifications may be made in the described examples, and other examples may be made within the scope of the claims.

Claims

1. A semiconductor package, comprising: a semiconductor die having a device side having circuitry formed thereon; a conductive terminal coupled to the device side of the semiconductor die; as well as a molding compound covering the semiconductor die and at least a portion of the conductive terminals, the conductive terminals being exposed to the outside of the molding compound, wherein the molding compound has a top surface and a bottom surface and lateral sides extending between the top surface and the bottom surface, the lateral sides comprising: a first surface that contacts the top surface and vertically extends from the top surface toward the bottom surface, a second surface contacting the first surface and extending horizontally away from the semiconductor die, and A third surface contacts the second surface and extends from the second surface to contact the bottom surface, the third surface having a physical mark caused by a singulation process, and the first surface and the second surface having no physical mark caused by the singulation process. The package according to claim 1 , wherein the singulation process is a laser sawing process. The package according to claim 1 , wherein the singulation process is a mechanical sawing process. The package of claim 1 , wherein the first surface is not orthogonal to the second surface. The package of claim 1 , wherein a height of the third surface is smaller than a height of the package.

6. The package of claim 1, further comprising a die pad coupled to the semiconductor die, wherein an edge of the die pad is within 0.5 mm from a closest edge of the bottom surface.

7. The package of claim 1, further comprising a cavity in the lateral side, a bottom surface of the cavity being in a first horizontal plane, the first horizontal plane being between a second horizontal plane coincident with the bottom surface and a third horizontal plane coincident with the second surface. 8 . The package of claim 7 , wherein the cavity coincides with the top surface, the first surface, the second surface, and the third surface. 9 . The package of claim 8 , further comprising a die pad coupled to the semiconductor die, wherein a vertical axis extends through an edge of the die pad and through the cavity.

10. A semiconductor package, comprising: a semiconductor die having a device side having circuitry formed thereon; a conductive terminal coupled to the device side of the semiconductor die; as well as a molding compound covering the semiconductor die and at least a portion of the conductive terminals, the conductive terminals being exposed to the outside of the molding compound, The molding compound includes a lateral surface extending in a vertical direction and having a height less than a height of the package, the lateral surface having a physical mark caused by a singulation process.

11. The package of claim 10, wherein the molding compound comprises lateral sides, the lateral sides comprising: a first surface that contacts a top surface of the package and extends vertically toward a bottom surface of the package; a second surface contacting the first surface and extending horizontally away from the semiconductor die; as well as The lateral surface contacts the second surface and extends vertically to contact the bottom surface of the package.

12. The package of claim 11, wherein the first surface is not orthogonal to the second surface.

13. The package of claim 11, further comprising a cavity in the lateral side, the cavity having a bottom surface coincident with a first horizontal plane, the first horizontal plane being located between a second horizontal plane coincident with the bottom surface and a third horizontal plane coincident with the second surface.

14. The package of claim 13, wherein the cavity coincides with the top surface, the first surface, the second surface, and the lateral surfaces. The package of claim 10 , wherein the singulation process is a laser sawing process. The package of claim 10 , wherein the singulation process is a mechanical sawing process.

17. A method for manufacturing a semiconductor package, comprising: coupling a plurality of semiconductor dies to a plurality of die pads of a high density lead frame; coupling each of the plurality of semiconductor dies to a conductive terminal of the high-density leadframe; positioning the high density lead frame and the semiconductor die in a mold sleeve having a protrusion positioned between consecutive ones of the plurality of die pads; causing a molding compound to cover the semiconductor die in the mold housing and flow under the protrusions in the mold housing, wherein a portion of the molding compound covering the semiconductor die is thicker than a portion of the molding compound between the semiconductor die; removing the high-density lead frame from the mold sleeve; trimming the high-density lead frame; as well as A plurality of semiconductor dies covered by a molding compound are singulated from one another to produce a semiconductor package, wherein the singulation is performed by using a tool to cut through the portions of the molding compound between the semiconductor dies.

18. The method of claim 17, wherein the protrusion comprises a first bottom surface, and further comprising a post having a second bottom surface, and wherein the second bottom surface extends closer to the lead frame than the first bottom surface.

19. The method of claim 18, wherein the posts create cavities that coincide with a plurality of surfaces of the semiconductor package.

20. The method of claim 17, wherein the tool is a laser saw or a mechanical saw.

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