Boost converter with temperature adjusting function

Abstract

The invention discloses a boost converter with a temperature adjusting function. The boost converter comprises a bridge rectifier, a first inductor, an absorption circuit, a power switcher, an output stage circuit, a feedback compensation circuit and a detection and control circuit, the absorber circuit may be coupled in parallel with the first inductor, wherein the absorber circuit may be selectively enabled or disabled according to a control potential. The power switch can selectively couple the first inductor to a ground potential according to a pulse width modulation potential. The detection and control circuit can generate the control potential according to a temperature-dependent potential and adjust a duty cycle of the pulse width modulation potential, wherein the temperature-dependent potential can be associated with the temperature of the first inductor.

Description

Technical Field

[0001] The invention relates to a boost converter, in particular to a boost converter with a temperature adjustment function. Background Art

[0002] The boost converter is an indispensable component in the field of notebook computers. However, if the temperature of the internal components of the boost converter is too high, it is easy to cause the overall operating performance of the related notebook computer to decline. In view of this, it is necessary to propose a new solution to overcome the difficulties faced by the previous technology. Summary of the invention

[0003] In a preferred embodiment, the present invention proposes a boost converter with temperature adjustment function, including: a bridge rectifier, generating a rectified potential according to a first input potential and a second input potential; a first inductor, receiving the rectified potential; an absorption circuit, coupled in parallel with the first inductor, wherein the absorption circuit is selectively enabled or disabled according to a control potential; a power switch, selectively coupling the first inductor to a ground potential according to a pulse width modulation potential; an output stage circuit, coupled to the first inductor, and generating an output potential; a feedback compensation circuit, generating a feedback potential according to the output potential; and a detection and control circuit, generating the pulse width modulation potential according to the feedback potential; wherein the detection and control circuit further generates the control potential according to a temperature-dependent potential and adjusts a duty cycle of the pulse width modulation potential; wherein the temperature-dependent potential is associated with the temperature of the first inductor. BRIEF DESCRIPTION OF THE DRAWINGS

[0004] Figure 1 is a schematic diagram showing a boost converter according to an embodiment of the present invention.

[0005] Figure 2 FIG. 4 is a circuit diagram showing a boost converter according to an embodiment of the present invention.

[0006] Figure 3 FIG. 4 is a graph showing the operating characteristics of a negative temperature coefficient resistor according to an embodiment of the present invention.

[0007] Figure 4 FIG. 4 is a diagram showing an operating characteristic of a first inductor when the boost inductor according to an embodiment of the present invention is switched from a normal mode to a first cooling mode.

[0008] Figure 5 FIG. 4 is a diagram showing the operating characteristics of the first inductor when the boost inductor according to an embodiment of the present invention is switched from a normal mode to a second cooling mode.

[0009] The reference numerals are described as follows:

[0010] 100, 200: Boost converter

[0011] 110, 210: Bridge rectifier

[0012] 120, 220: Absorption circuit

[0013] 130, 230: Power switch

[0014] 140, 240: Output stage circuit

[0015] 150, 250: Feedback compensation circuit

[0016] 160, 260: Detection and control circuits

[0017] 252: Voltage Regulator

[0018] 254: Linear Optocoupler

[0019] 256: Amplifier

[0020] 262: Microcontroller

[0021] C1: First capacitor

[0022] C2: Second capacitor

[0023] C3: The third capacitor

[0024] C4: Fourth capacitor

[0025] D: Duty cycle

[0026] D1: The first diode

[0027] D2: Second diode

[0028] D3: The third diode

[0029] D4: The fourth diode

[0030] D5: The fifth diode

[0031] DL: Light Emitting Diode

[0032] IX: Fixed current

[0033] K: Gain factor

[0034] L1: First inductor

[0035] L2: Second inductor

[0036] M1: First transistor

[0037] M2: Second transistor

[0038] M3: The third transistor

[0039] N1: First node

[0040] N2: Second node

[0041] N3: The third node

[0042] N4: The fourth node

[0043] N5: The fifth node

[0044] N6: The sixth node

[0045] N7: Seventh node

[0046] N8: Node 8

[0047] N9: Ninth Node

[0048] NIN1: First input node

[0049] NIN2: Second input node

[0050] NOUT: Output node

[0051] Q4: Bipolar Junction Transistor

[0052] R1: First resistor

[0053] R2: Second resistor

[0054] R3: The third resistor

[0055] RN: Negative Temperature Coefficient Resistor

[0056] T: Temperature

[0057] T1: First time point

[0058] T2: Second time point

[0059] VA: Amplified potential

[0060] VC: Controlled Potential

[0061] VF: Feedback potential

[0062] VIN1: First input potential

[0063] VIN2: Second input potential

[0064] VM: Pulse Width Modulation Potentiometer

[0065] VOUT: output potential

[0066] VP: Capacitor potential

[0067] VR: Rectification potential

[0068] VSS: Ground potential

[0069] VTH1: First critical potential

[0070] VTH2: Second critical potential

[0071] VTH3: The third critical potential

[0072] VX: Temperature dependent potential DETAILED DESCRIPTION

[0073] In order to make the purpose, features and advantages of the present invention more clearly understood, specific embodiments of the present invention are given below and described in detail with reference to the accompanying drawings.

[0074] Certain words are used in the specification and claims to refer to specific components. It should be understood by those skilled in the art that hardware manufacturers may use different terms to refer to the same component. The specification and claims do not use differences in names as a way to distinguish components, but use differences in the functions of components as the criteria for distinction. The words "including" and "comprising" mentioned throughout the specification and claims are open-ended terms and should be interpreted as "including but not limited to". The word "substantially" means that within an acceptable error range, those skilled in the art can solve the technical problem and achieve the basic technical effect within a certain error range. In addition, the word "coupled" in this specification includes any direct and indirect electrical connection means. Therefore, if the text describes a first device coupled to a second device, it means that the first device can be directly electrically connected to the second device, or indirectly electrically connected to the second device via other devices or connection means.

[0075] Figure 1 is a schematic diagram showing a boost converter 100 according to an embodiment of the present invention. For example, the boost converter 100 may be applied to a desktop computer, a notebook computer, or an all-in-one computer. Figure 1 As shown, the boost converter 100 includes: a bridge rectifier 110, a first inductor L1, an absorption circuit 120, a power switch 130, an output stage circuit 140, a feedback compensation circuit 150, and a detection and control circuit 160. It should be noted that although not shown in Figure 1 However, the boost converter 100 may further include other components, such as: a regulator and / or a negative feedback circuit.

[0076] The bridge rectifier 110 can generate a rectified potential VR according to a first input potential VIN1 and a second input potential VIN2, wherein an AC voltage with any frequency and any amplitude can be formed between the first input potential VIN1 and the second input potential VIN2. For example, the frequency of the AC voltage can be about 50 Hz or 60 Hz, and the root mean square value (RMS) of the AC voltage can be about between 90 V and 264 V, but is not limited thereto. The first inductor L1 can receive the rectified potential VR. The absorption circuit 120 can be coupled in parallel with the first inductor L1, wherein the absorption circuit 120 can be selectively enabled or disabled according to a control potential VC. For example, if the absorption circuit 120 is enabled, it can be used to absorb energy from the first inductor L1, thereby reducing the temperature T of the first inductor L1. The power switch 130 can selectively couple the first inductor L1 to a ground potential VSS (e.g., 0V) according to a pulse width modulation (PWM) potential VM. For example, if the pulse width modulation potential VM is a high logic level (i.e., logic "1"), the power switch 130 can couple the first inductor L1 to the ground potential VSS (i.e., the power switch 130 can be similar to a short-circuit path); conversely, if the pulse width modulation potential VM is a low logic level (i.e., logic "0"), the power switch 130 will not couple the first inductor L1 to the ground potential VSS (i.e., the power switch 130 can be similar to an open-circuit path). The output stage circuit 140 is coupled to the first inductor L1 and can be used to generate an output potential VOUT. For example, the output potential VOUT can be a DC potential, and its potential level can be between 360V and 440V, but is not limited thereto. The feedback compensation circuit 150 can generate a feedback potential VF according to the output potential VOUT. The detection and control circuit 160 can generate a pulse width modulation potential VM according to the feedback potential VF. In addition, the detection and control circuit 160 can generate a control potential VC and adjust a duty cycle D of the pulse width modulation potential VM according to a temperature dependent potential (TemperatureDependent Voltage) VX, wherein the temperature dependent potential VX can be associated with the temperature T of the first inductor L1. Generally speaking, after analyzing the temperature dependent potential VX, the detection and control circuit 160 can fine-tune the temperature T of the first inductor L1 by using the control potential VC and adjusting the pulse width modulation potential VM, thereby effectively reducing the risk of the temperature T of the first inductor L1 being accidentally too high.

[0077] The following embodiments will introduce the detailed structure and operation of the boost converter 100. It should be understood that these drawings and descriptions are only for example and are not intended to limit the scope of the present invention.

[0078] Figure 2 is a circuit diagram showing a boost converter 200 according to an embodiment of the present invention. Figure 2 In the embodiment of the present invention, the boost converter 200 has a first input node NIN1, a second input node NIN2, and an output node NOUT, and includes a bridge rectifier 210, a first inductor L1, an absorption circuit 220, a power switch 230, an output stage circuit 240, a feedback compensation circuit 250, and a detection and control circuit 260. The first input node NIN1 and the second input node NIN2 of the boost converter 200 can be used to receive a first input potential VIN1 and a second input potential VIN2 from an external input power source (not shown), respectively. The output node NOUT of the boost converter 200 can be used to output an output potential VOUT to a system end (not shown).

[0079] The bridge rectifier 210 includes a first diode D1, a second diode D2, a third diode D3, and a fourth diode D4. The first diode D1 has an anode and a cathode, wherein the anode of the first diode D1 is coupled to the first input node NIN1, and the cathode of the first diode D1 is coupled to a first node N1 to output a rectified potential VR. The second diode D2 has an anode and a cathode, wherein the anode of the second diode D2 is coupled to the second input node NIN2, and the cathode of the second diode D2 is coupled to the first node N1. The third diode D3 has an anode and a cathode, wherein the anode of the third diode D3 is coupled to a ground potential VSS, and the cathode of the third diode D3 is coupled to the first input node NIN1. The fourth diode D4 has an anode and a cathode, wherein the anode of the fourth diode D4 is coupled to the ground potential VSS, and the cathode of the fourth diode D4 is coupled to the second input node NIN2.

[0080] The first inductor L1 has a first terminal and a second terminal, wherein the first terminal of the first inductor L1 is coupled to the first node N1 to receive the rectified potential VR, and the second terminal of the first inductor L1 is coupled to a second node N2. In some embodiments, the first inductor L1 can be regarded as a boost inductor of the boost converter 200.

[0081] The absorption circuit 220 includes a first transistor M1, a second transistor M2, a second inductor L2, and a first capacitor C1. For example, the first transistor M1 and the second transistor M2 may each be an N-type metal-oxide-semiconductor field-effect transistor (NMOSFET). The second inductor L2 has a first end and a second end, wherein the first end of the second inductor L2 is coupled to the first node N1, and the second end of the second inductor L2 is coupled to a third node N3. The first transistor M1 has a control end (e.g., a gate), a first end (e.g., a source), and a second end (e.g., a drain), wherein the control end of the first transistor M1 can be used to receive a control potential VC, the first end of the first transistor M1 is coupled to a fourth node N4, and the second end of the first transistor M1 is coupled to the third node N3. The second transistor M2 has a control terminal (e.g., a gate), a first terminal (e.g., a source), and a second terminal (e.g., a drain), wherein the control terminal of the second transistor M2 is used to receive an amplified potential VA, the first terminal of the second transistor M2 is coupled to a fifth node N5, and the second terminal of the second transistor M2 is coupled to the fourth node N4. The first capacitor C1 has a first terminal and a second terminal, wherein the first terminal of the first capacitor C1 is coupled to the fifth node N5, and the second terminal of the first capacitor C1 is coupled to the second node N2.

[0082] The power switch 230 includes a third transistor M3. For example, the third transistor M3 may be another N-type metal oxide semiconductor field effect transistor. The third transistor M3 has a control terminal (e.g., a gate), a first terminal (e.g., a source), and a second terminal (e.g., a drain), wherein the control terminal of the third transistor M3 is used to receive a pulse width modulation potential VM, the first terminal of the third transistor M3 is coupled to the ground potential VSS, and the second terminal of the third transistor M3 is coupled to the second node N2.

[0083] The output stage circuit 240 includes a fifth diode D5 and a second capacitor C2. The fifth diode D5 has an anode and a cathode, wherein the anode of the fifth diode D5 is coupled to the second node N2, and the cathode of the fifth diode D5 is coupled to the output node NOUT. The second capacitor C2 has a first end and a second end, wherein the first end of the second capacitor C2 is coupled to the output node NOUT, and the second end of the second capacitor C2 is coupled to the ground potential VSS.

[0084] In some embodiments, the feedback compensation circuit 250 includes a voltage regulator 252, a linear optical coupler 254, an amplifier 256, a third capacitor C3, a fourth capacitor C4, a first resistor R1, a second resistor R2, and a third resistor R3.

[0085] The first resistor R1 has a first end and a second end, wherein the first end of the first resistor R1 is coupled to the output node NOUT to receive the output potential VOUT, and the second end of the first resistor R1 is coupled to a sixth node N6. The second resistor R2 has a first end and a second end, wherein the first end of the second resistor R2 is coupled to the sixth node N6, and the second end of the second resistor R2 is coupled to the ground potential VSS. The third resistor R3 has a first end and a second end, wherein the first end of the third resistor R3 is coupled to a seventh node N7, and the second end of the third resistor R3 is coupled to the output node NOUT to receive the output potential VOUT. The third capacitor C3 has a first end and a second end, wherein the first end of the third capacitor C3 is coupled to an eighth node N8, and the second end of the third capacitor C3 is coupled to the sixth node N6.

[0086] In some embodiments, the voltage regulator 252 is implemented by a TL431 electronic component. The voltage regulator 252 has an anode, a cathode, and a reference terminal, wherein the anode of the voltage regulator 252 is coupled to the ground potential VSS, the cathode of the voltage regulator 252 is coupled to the eighth node N8, and the reference terminal of the voltage regulator 252 is coupled to the sixth node N6.

[0087] In some embodiments, the linear optical coupler 254 is implemented by a PC817 electronic component. The linear optical coupler 254 includes a light emitting diode DL and a bipolar junction transistor Q4 (e.g., NPN type). The light emitting diode DL has an anode and a cathode, wherein the anode of the light emitting diode DL is coupled to the seventh node N7, and the cathode of the light emitting diode DL is coupled to the eighth node N8. The bipolar junction transistor Q4 has a collector and an emitter, wherein the collector of the bipolar junction transistor Q4 is used to output a feedback potential VF, and the emitter of the bipolar junction transistor Q4 is coupled to a ninth node N9.

[0088] In addition, the fourth capacitor C4 has a first end and a second end, wherein the first end of the fourth capacitor C4 is coupled to the ninth node N9 to output a capacitance potential VP, and the second end of the fourth capacitor C4 is coupled to the ground potential VSS. The amplifier 256 can generate an amplified potential VA according to the capacitance potential VP, wherein a gain factor K of the amplifier 256 can be greater than 1. In some embodiments, the relationship between the amplified potential VA and the capacitance potential VP can be as described in the following equation (1):

[0089] VA=K·VP (1)

[0090] Wherein “VA” represents the potential level of the amplified potential VA, “VP” represents the potential level of the capacitor potential VP, and “K” represents the gain factor K of the amplifier 256 .

[0091] The detection and control circuit 260 includes a microcontroller unit (MCU) 262 and a negative temperature coefficient (NTC) resistor RN.

[0092] The microcontroller 262 can output a fixed current IX, wherein the fixed current IX can flow through the negative temperature coefficient resistor RN. The negative temperature coefficient resistor RN has a first end and a second end, wherein the first end of the negative temperature coefficient resistor RN can be used to output a temperature-dependent potential VX, and the second end of the negative temperature coefficient resistor RN is coupled to the ground potential VSS. It should be noted that the negative temperature coefficient resistor RN is arranged adjacent to the first inductor L1 to obtain relevant information about the temperature T of the first inductor L1. For example, the distance between the negative temperature coefficient resistor RN and the first inductor L1 can be less than or equal to 10 mm, but is not limited thereto. In some embodiments, the temperature T of the first inductor L1 can also be approximately equal to the overall temperature of the boost inductor 200. According to Ohm's law, the relationship between the temperature-dependent potential VX and the fixed current IX can be as described in the following equation (2):

[0093] VX=IX·RN (2)

[0094] Wherein “VX” represents the potential level of the temperature dependent potential VX, “IX” represents the current value of the fixed current IX, and “RN” represents the resistance value of the negative temperature coefficient resistor RN.

[0095] Figure 3 1 is a graph showing the operating characteristics of the negative temperature coefficient resistor RN according to an embodiment of the present invention, wherein the horizontal axis represents the temperature T (°C) of the first inductor L1 and the vertical axis represents the resistance value (KΩ) of the negative temperature coefficient resistor RN. Figure 3According to the measurement results, if the temperature T of the first inductor L1 decreases, the resistance value of the negative temperature coefficient resistor RN will increase, and the temperature-dependent potential VX will increase; conversely, if the temperature T of the first inductor L1 increases, the resistance value of the negative temperature coefficient resistor RN will decrease, and the temperature-dependent potential VX will decrease. It must be understood that Figure 3 The operating characteristic diagram is only an example, and the actual characteristics of the negative temperature coefficient resistor RN can be adjusted according to different needs.

[0096] The microcontroller 262 can generate a pulse width modulation potential VM according to the feedback potential VF. For example, a duty cycle D of the pulse width modulation potential VM at the initial stage can be between 60% and 80%, but is not limited thereto. In addition, the microcontroller 262 can also generate a control potential VC and adjust the duty cycle D of the pulse width modulation potential VM according to the temperature-dependent potential VX. In some embodiments, the microcontroller 262 can compare the temperature-dependent potential VX with a first critical potential VTH1, a second critical potential VTH2, and a third critical potential VTH3, wherein the first critical potential VTH1 is lower than the second critical potential VTH2, and the second critical potential VTH2 is lower than the third critical potential VTH3. Based on different comparison results, the microcontroller 262 can operate in the following four modes, as described in detail in the subsequent embodiments.

[0097] In a normal mode, if the temperature dependent potential VX is higher than the third threshold potential VTH3 (VX>VTH3), it means that the temperature T of the first inductor L1 is within a normal range. At this time, the microcontroller 262 will output a control potential VC with a low logic level to disable the absorption circuit 220. In addition, the microcontroller 262 can also maintain the pulse width modulation potential VM at the initial duty cycle D.

[0098] In a first cooling mode, if the temperature-dependent potential VX is higher than the second critical potential VTH2 and lower than or equal to the third critical potential VTH3 (VTH3 ≥ VX > VTH2), it means that the temperature T of the first inductor L1 is slightly higher. At this time, the microcontroller 262 will output the control potential VC with a low logic level to disable the absorption circuit 220. In addition, the microcontroller 262 can also reduce the duty cycle D of the pulse width modulation potential VM. For example, the duty cycle D of the pulse width modulation potential VM can be reduced to 32%, but it is not limited thereto.

[0099] Figure 41 is a graph showing the operating characteristics of the first inductor L1 when the boost inductor 200 according to an embodiment of the present invention is switched from the normal mode to the first cooling mode, wherein the horizontal axis represents time (s) and the vertical axis represents the stored energy (J) of the first inductor L1. At a first time point T1, the boost inductor 200 is switched from the normal mode to the first cooling mode. As the duty cycle D of the pulse width modulation potential VM decreases, the stored energy of the first inductor L1 will decrease, and the temperature T of the first inductor L1 will also decrease.

[0100] In a second cooling mode, if the temperature-dependent potential VX is higher than the first critical potential VTH1 and lower than or equal to the second critical potential VTH2 (VTH2 ≥ VX > VTH1), it means that the temperature T of the first inductor L1 is higher. At this time, the microcontroller 262 will output a control potential VC with a high logic level to enable the absorption circuit 220. It must be noted that because the amplified potential VA is usually sufficient to turn on the second transistor M2, the absorption circuit 220 is selectively enabled or disabled mainly based on the control potential VC applied to the first transistor M1. In addition, the microcontroller 262 can also reduce the duty cycle D of the pulse width modulation potential VM at the same time. For example, the duty cycle D of the pulse width modulation potential VM can be reduced to 32%, but it is not limited to this.

[0101] Figure 5 1 is an operational characteristic diagram of the first inductor L1 when the boost inductor 200 according to an embodiment of the present invention is switched from the normal mode to the second cooling mode, wherein the horizontal axis represents time (s) and the vertical axis represents the stored energy (J) of the first inductor L1. At a second time point T2, the boost inductor 200 is switched from the normal mode to the second cooling mode. Since the duty cycle D of the pulse width modulation potential VM is reduced, the stored energy of the first inductor L1 will be reduced. On the other hand, the first inductor L1 can resonate with the second inductor L2 and the first capacitor C1 of the absorption circuit 220, so that the absorption circuit 220 can quickly absorb the energy from the first inductor L1. Therefore, the temperature T of the first inductor L1 will also be greatly reduced.

[0102] In a protection mode, if the temperature-dependent potential VX is lower than or equal to the first critical potential VTH1 (VTH1 ≥ VX), it means that the temperature T of the first inductor L1 is very high. At this time, the microcontroller 262 will trigger an over-temperature protection (OTP) mechanism. For example, the microcontroller 262 may stop outputting the pulse width modulation potential VM, so that the output potential VOUT of the boost inductor 200 eventually drops to 0.

[0103] In summary, the four operation modes of the boost inductor 200 can be described in Table 1 below:

[0104]

[0105] Table 1: Four operating modes of boost inductors

[0106] The present invention proposes a novel boost converter which has a temperature adjustment function. According to actual measurement results, the boost converter designed as above can avoid the temperature of its internal components from being too high, so it is very suitable for application in various devices.

[0107] It is worth noting that the above-mentioned potential, current, resistance value, inductance value, capacitance value, and other component parameters are not limiting conditions of the present invention. Designers can adjust these setting values ​​according to different needs. The boost converter of the present invention is not limited to Figure 1-Figure 5 The present invention may only include Figure 1-Figure 5 In other words, not all the features shown in the figure need to be implemented in the boost converter of the present invention at the same time. Although the embodiments of the present invention use metal oxide semiconductor field effect transistors as an example, the present invention is not limited thereto. People skilled in the art may use other types of transistors, such as junction field effect transistors, or fin field effect transistors, etc., without affecting the effects of the present invention.

[0108] Ordinal numbers in this specification and claims, such as "first", "second", "third", etc., have no sequential relationship with each other and are only used to distinguish two different elements with the same name.

[0109] Although the present invention is disclosed as above with preferred embodiments, it is not intended to limit the scope of the present invention. Anyone skilled in the art may make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.

Claims

1. A boost converter with temperature adjustment function, comprising: a bridge rectifier, generating a rectified potential according to a first input potential and a second input potential; a first inductor receiving the rectified potential; a snubber circuit coupled in parallel with the first inductor, wherein the snubber circuit is selectively enabled or disabled according to a control potential; a power switch selectively coupling the first inductor to a ground potential according to a pulse width modulation potential; an output stage circuit coupled to the first inductor and generating an output potential; a feedback compensation circuit, generating a feedback potential according to the output potential; as well as a detection and control circuit, generating the pulse width modulation potential according to the feedback potential; The detection and control circuit further generates the control potential and adjusts a duty cycle of the pulse width modulation potential according to a temperature-dependent potential; The temperature-dependent potential is associated with the temperature of the first inductor.

2. The boost converter as claimed in claim 1, wherein the bridge rectifier comprises: a first diode having an anode and a cathode, wherein the anode of the first diode is coupled to a first input node to receive the first input potential, and the cathode of the first diode is coupled to a first node to output the rectified potential; a second diode having an anode and a cathode, wherein the anode of the second diode is coupled to a second input node to receive the second input potential, and the cathode of the second diode is coupled to the first node; a third diode having an anode and a cathode, wherein the anode of the third diode is coupled to the ground potential, and the cathode of the third diode is coupled to the first input node; as well as a fourth diode having an anode and a cathode, wherein the anode of the fourth diode is coupled to the ground potential, and the cathode of the fourth diode is coupled to the second input node; The first inductor has a first end and a second end. The first end of the first inductor is coupled to the first node, and the second end of the first inductor is coupled to a second node.

3. The boost converter as claimed in claim 2, wherein the absorption circuit comprises: a second inductor having a first end and a second end, wherein the first end of the second inductor is coupled to the first node, and the second end of the second inductor is coupled to a third node; a first transistor having a control terminal, a first terminal, and a second terminal, wherein the control terminal of the first transistor is used to receive the control potential, the first terminal of the first transistor is coupled to a fourth node, and the second terminal of the first transistor is coupled to the third node; a second transistor having a control terminal, a first terminal, and a second terminal, wherein the control terminal of the second transistor is used to receive an amplified potential, the first terminal of the second transistor is coupled to a fifth node, and the second terminal of the second transistor is coupled to the fourth node; as well as A first capacitor has a first end and a second end, wherein the first end of the first capacitor is coupled to the fifth node, and the second end of the first capacitor is coupled to the second node.

4. The boost converter as claimed in claim 3, wherein the power switch comprises: A third transistor has a control terminal, a first terminal, and a second terminal, wherein the control terminal of the third transistor is used to receive the pulse width modulation potential, the first terminal of the third transistor is coupled to the ground potential, and the second terminal of the third transistor is coupled to the second node.

5. The boost converter as claimed in claim 3, wherein the output stage circuit comprises: a fifth diode having an anode and a cathode, wherein the anode of the fifth diode is coupled to the second node, and the cathode of the fifth diode is coupled to an output node to output the output potential; as well as A second capacitor has a first end and a second end, wherein the first end of the second capacitor is coupled to the output node, and the second end of the second capacitor is coupled to the ground potential.

6. The boost converter as claimed in claim 5, wherein the feedback compensation circuit comprises: a first resistor having a first end and a second end, wherein the first end of the first resistor is coupled to the output node to receive the output potential, and the second end of the first resistor is coupled to a sixth node; a second resistor having a first end and a second end, wherein the first end of the second resistor is coupled to the sixth node, and the second end of the second resistor is coupled to the ground potential; a third resistor having a first end and a second end, wherein the first end of the third resistor is coupled to a seventh node, and the second end of the third resistor is coupled to the output node; a third capacitor having a first end and a second end, wherein the first end of the third capacitor is coupled to an eighth node, and the second end of the third capacitor is coupled to the sixth node; as well as A voltage regulator has an anode, a cathode, and a reference terminal, wherein the anode of the voltage regulator is coupled to the ground potential, the cathode of the voltage regulator is coupled to the eighth node, and the reference terminal of the voltage regulator is coupled to the sixth node.

7. The boost converter as claimed in claim 6, wherein the feedback compensation circuit further comprises: A linear optical coupler, comprising a light emitting diode and a bipolar junction transistor, wherein the light emitting diode has an anode and a cathode, the anode of the light emitting diode is coupled to the seventh node, the cathode of the light emitting diode is coupled to the eighth node, the bipolar junction transistor has a collector and an emitter, the collector of the bipolar junction transistor is used to output the feedback potential, and the emitter of the bipolar junction transistor is coupled to a ninth node; a fourth capacitor having a first end and a second end, wherein the first end of the fourth capacitor is coupled to the ninth node to output a capacitance potential, and the second end of the fourth capacitor is coupled to the ground potential; as well as An amplifier generates the amplified potential according to the capacitor potential.

8. The boost converter as claimed in claim 1, wherein the detection and control circuit comprises: A negative temperature coefficient resistor is adjacent to the first inductor and has a first end and a second end, wherein the first end of the negative temperature coefficient resistor is used to output the temperature-dependent potential, and the second end of the negative temperature coefficient resistor is coupled to the ground potential.

9. The boost converter as claimed in claim 8, wherein the detection and control circuit further comprises: A microcontroller outputs a fixed current, wherein the fixed current flows through the negative temperature coefficient resistor; The microcontroller further generates the control potential and adjusts the duty cycle of the pulse width modulation potential according to the feedback potential and the temperature dependent potential.

10. The boost converter of claim 9, wherein: If the temperature-dependent potential is lower than or equal to a first critical potential, the microcontroller will trigger an over-temperature protection mechanism; If the temperature-dependent potential is higher than the first critical potential and lower than or equal to a second critical potential, the microcontroller will output the control potential with a high logic level and reduce the duty cycle of the pulse width modulation potential; If the temperature dependent potential is higher than the second critical potential and lower than or equal to a third critical potential, the microcontroller will output the control potential with a low logic level and reduce the duty cycle of the pulse width modulation potential.

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