Photoelectric coupling device

Abstract

The photoelectric coupling device comprises a circuit board, an MOS (Metal Oxide Semiconductor) chip, a photoelectric generator and an LED (Light Emitting Diode) chip, wherein the MOS chip is electrically connected to the top surface of the circuit board; the photoelectric generator is arranged on the MOS chip; the LED chip is fixed on the photoelectric generator; the LED chip is arranged on the circuit board, the light emitting surface of the LED chip faces the light sensing surface of the photoelectric generator, the LED chip and the photoelectric generator are arranged in a solid crystal opposite mode, the LED chip is electrically connected with the input end of the circuit board based on a bonding wire, and the photoelectric generator is electrically connected with the MOS chip based on a bonding wire. By configuring the LED chip and the photoelectric generator, which are opposite to each other in a solid crystal manner, on the MOS chip, the optical energy transmission path in the photoelectric coupling device is shortened, the optical transmission efficiency is improved, the optical energy loss is reduced, the service power of the photoelectric coupling device is reduced, and the service life of the device is prolonged.

Description

Technical Field

[0001] The present invention relates to the technical field of optoelectronic devices, and in particular to an optoelectronic coupling device. Background Art

[0002] A photoelectric coupling device is an electronic device that can convert electrical signals and optical signals into each other. It is mainly composed of two parts: a transmitting chip (such as a light-emitting diode LED) and a receiving chip (such as a phototransistor, photoresistor, etc.). The receiving chip receives the light energy from the transmitting chip, converts the light energy, and outputs current.

[0003] At present, in optocoupler devices, the light-emitting chip and the photosensitive chip are generally encapsulated in the same package by encapsulation glue, and the internal packaging structure is configured as contrast type or reflective type. Generally, contrast type optocouplers are die-bonded and wire-bonded on different metal lead frames, and then the metal frame that fixes the LED chip is flipped to overlap the metal frame at the transmitting end and the metal frame at the receiving end, so that the transmitting chip and the receiving chip are opposite, and then injection molding is performed, and the input and output pins are bent into shape. Reflective optocouplers are die-bonded and wire-bonded on the same metal lead frame, and then the transmitting chip and the receiving chip are encapsulated with light-transmitting encapsulation glue, and then the outer layer is injection-molded with an encapsulation colloid with a reflective function, and finally the input and output pins are bent into shape.

[0004] In order to meet the safety insulation distance requirements, the existing packaging structure requires that both the input and output ends be filled with insulating glue, and the secondary plastic sealing and secondary colloid are removed. There are double-layer brackets and double-layer sealing glue, and the device size and thickness are limited. Based on the settings of the double-layer bracket and double-layer packaging glue, the overall structural size of the optocoupler device is relatively large, the light energy transmission distance between the light-emitting device and the light-receiving device is long, and light energy transmission loss is prone to occur, which increases the power of the optocoupler device and affects the service life of the device. Summary of the invention

[0005] The purpose of the present invention is to overcome the shortcomings of the prior art. The present invention provides a photoelectric coupling device. By configuring an LED chip and a photoelectric generator that are directly opposite to the die on a MOS chip, the light energy transmission path inside the photoelectric coupling device is shortened, the light transmission efficiency is improved, the light energy loss is reduced, the power used by the photoelectric coupling device is reduced, and the service life of the device is extended.

[0006] The present invention provides a photoelectric coupling device, which comprises: a circuit board, a MOS chip electrically connected to the top surface of the circuit board, a photoelectric generator arranged on the MOS chip, and an LED chip fixed on the photoelectric generator;

[0007] The light emitting surface of the LED chip faces the photosensitive surface of the photoelectric generator, the LED chip and the photoelectric generator are arranged opposite to each other in a solid-crystal manner, and the LED chip is electrically connected to the input end of the circuit board based on the welding wire, and the photoelectric generator is electrically connected to the MOS chip based on the welding wire.

[0008] Furthermore, the circuit board includes a substrate and a circuit layer covering the substrate;

[0009] The circuit layer includes a first circuit arrangement structure for connecting the LED chip and a second circuit arrangement structure for connecting the photoelectric generator.

[0010] Furthermore, the thickness of the substrate is H, and the value range of H is: 0.1mm≤H≤0.5mm.

[0011] Furthermore, the first circuit arrangement mechanism includes a first arc groove arranged on the side wall of the substrate, a first metal layer arranged on the bottom surface of the substrate, and a second metal layer arranged on the top surface of the substrate;

[0012] The first metal layer and the second metal layer are electrically connected based on the first arc groove, the positive terminal of the LED chip is electrically connected to the second metal layer based on a welding wire, and the first metal layer is configured as a first input pin of the substrate.

[0013] Furthermore, the first circuit arrangement structure further includes a second arc groove arranged on the side wall of the substrate, a third metal layer arranged on the bottom surface of the substrate, and a fourth metal layer arranged on the top surface of the substrate;

[0014] The third metal layer and the fourth metal layer are electrically connected based on the third arc groove, the negative terminal of the LED chip is electrically connected to the fourth metal layer based on a welding wire, and the third metal layer is configured as a second input pin of the substrate.

[0015] Furthermore, the second circuit arrangement structure includes a third arc groove arranged on the side wall of the substrate and a fifth metal layer arranged on the bottom surface of the substrate;

[0016] The fifth metal layer is electrically connected to the third arc slot, and the fifth metal layer is configured as a first output pin of the substrate.

[0017] Furthermore, the second circuit arrangement structure includes a fourth arc groove arranged on the side wall of the substrate and a sixth metal layer arranged on the bottom surface of the substrate;

[0018] The sixth metal layer is electrically connected to the fourth arc slot, and the sixth metal layer is configured as a second output pin of the substrate.

[0019] Furthermore, a seventh metal layer and an eighth metal layer are disposed on the top surface of the substrate, the seventh metal layer is arranged corresponding to the fifth metal layer, and the eighth metal layer is arranged corresponding to the sixth metal layer;

[0020] The substrate is provided with a plurality of electrical connection through holes, and the plurality of electrical connection through holes are divided into a first electrical connection through hole array and a second electrical connection through hole array which are symmetrically distributed;

[0021] The fifth metal layer and the seventh metal layer are electrically connected based on the first electrical connection through hole array;

[0022] The sixth metal layer and the eighth metal layer are electrically connected based on the second electrical connection through-hole array.

[0023] Further, the MOS chip includes a first sub-chip and a second sub-chip, the first sub-chip is correspondingly arranged on the seventh metal layer, and the second sub-chip is correspondingly arranged on the eighth metal layer;

[0024] The first sub-chip is electrically connected to the seventh metal layer, and the second sub-chip is electrically connected to the eighth metal layer.

[0025] Furthermore, the first sub-chip is fixed to the region where the first electrical connection through-hole is located based on conductive adhesive, and the second sub-chip is fixed to the region where the second electrical connection through-hole is located based on conductive adhesive.

[0026] Furthermore, the source pad of the first sub-chip and the source pad of the second sub-chip are connected based on metal wire bonding.

[0027] Furthermore, the distance between the first metal layer and the fifth metal layer is h1, and the value range of h1 is: 0.5mm≤h1≤1mm;

[0028] The distance between the third metal layer and the sixth metal layer is h2, and the value range of h2 is: 0.5mm≤h2≤1mm.

[0029] Furthermore, the distance between the first metal layer and the third metal layer is h3, and the value range of h3 is: 1.5mm≤h3≤5mm;

[0030] The distance between the fifth metal layer and the sixth metal layer is h4, and the value range of h4 is: 1.5mm≤h4≤5mm.

[0031] Furthermore, the photosensitive position of the photoelectric generator is coated with a light-transmitting layer.

[0032] Furthermore, the thickness of the light-transmitting layer is h5, and the value range of h5 is: 15 μm≤h5≤50 μm.

[0033] Furthermore, the material of the light-transmitting layer is silicon dioxide, or the material of the light-transmitting layer is polyimide film.

[0034] Furthermore, the photoelectric coupling device also includes a glue dispensing layer, and the glue dispensing layer is coated on the LED chip.

[0035] Furthermore, the material of the glue dispensing layer is silicone.

[0036] Furthermore, the optoelectronic coupling device further comprises a plastic packaging layer, the plastic packaging layer covers the top surface of the circuit board, and the MOS chip, the photoelectric generator and the LED chip are accommodated in the plastic packaging layer.

[0037] Furthermore, the plastic sealing layer is a light-proof structure.

[0038] Furthermore, the material of the plastic sealing layer is epoxy resin.

[0039] The present invention provides a photoelectric coupling device. By integrating a MOS chip, an LED chip and a photoelectric generator on a circuit board, an electrical electrode pin of the photoelectric coupling device is formed based on the circuit board configuration to form a patch-type device structure, so that the structure of the photoelectric coupling device is compact, and the LED chip and the photoelectric generator are configured on the MOS chip so that the die bonding is directly opposite, so that the light transmission path inside the photoelectric coupling device is shortened, the light transmission efficiency is improved, and the device trigger current is reduced by multiples, which can effectively reduce the power consumption of the photoelectric coupling device and extend the service life of the photoelectric coupling device. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0041] Figure 1 is a schematic structural diagram of a photoelectric coupling device in an embodiment of the present invention;

[0042] Figure 2 is a structural cross-sectional view of a photoelectric coupling device in an embodiment of the present invention;

[0043] Figure 3 Schematic diagram of the bottom structure of the optocoupler device in the embodiment of the present invention. DETAILED DESCRIPTION

[0044] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0045] Figure 1 FIG. 1 shows a schematic diagram of the structure of a photoelectric coupling device in an embodiment of the present invention. Figure 2 A cross-sectional view of the structure of a photoelectric coupling device in an embodiment of the present invention is shown; Figure 3 The bottom structure schematic diagram of the photoelectric coupling device in the embodiment of the present invention is shown, and the photoelectric coupling device comprises: a circuit board 1, a MOS chip 5 electrically connected to the top surface of the circuit board 1, a photoelectric generator 4 arranged on the MOS chip 5, and an LED chip 3 bonded and fixed to the photoelectric generator 4;

[0046] The LED chip 3 and the photoelectric generator 4 are arranged opposite to each other in a solid-crystal arrangement, and the LED chip 3 is electrically connected to the input end of the circuit board 1 based on a bonding wire, and the photoelectric generator 4 is electrically connected to the MOS chip 5 based on a bonding wire.

[0047] Specifically, the LED chip 3 and the photoelectric generator 4 form a solid-crystal facing distribution state, so that the light-emitting surface of the LED chip 3 can directly face the photosensitive area of ​​the photoelectric generator 4, thereby shortening the optical signal transmission path between the LED chip 3 and the photoelectric generator 4, and improving the optical signal propagation rate between the LED chip 3 and the photoelectric generator 4.

[0048] Furthermore, by shortening the light propagation path between the LED chip 3 and the photoelectric generator 4, the risk of light signal propagation attenuation between the LED chip 3 and the photoelectric generator 4 can be effectively reduced, and the working stability and reliability of the optoelectronic coupling device can be effectively improved.

[0049] Specifically, the circuit board 1 includes a substrate 11 and a circuit layer 10 covering the substrate 11. The circuit layer 10 structure is formed by electroplating a metal layer on the substrate 11, so that the circuit board 1 can meet the electrical connection requirements of the LED chip 3 and the photoelectric generator 4.

[0050] Furthermore, the circuit layer 10 includes a first circuit arrangement structure for connecting the LED chip 3, and a second circuit arrangement structure for connecting the photoelectric generator 4. Based on the first circuit arrangement structure and the second circuit arrangement structure, the electrical connection structure of the LED chip 3 and the photoelectric generator 4 is centrally arranged on the circuit board 1, which can simplify the structural arrangement of the photoelectric generator 4.

[0051] Specifically, the thickness of the substrate 11 is H, and the value range of H is: 0.1mm≤H≤0.5mm, so that the structure size of the optocoupler device is compact and meets the requirements of setting the circuit layer 10 on the substrate 11 and the solid-die connection of the MOS chip 5, the photoelectric generator 4 and the LED chip 3.

[0052] Specifically, the first circuit arrangement mechanism includes a first arc groove 109 arranged on the side wall of the substrate 11, a first metal layer 101 arranged on the bottom surface of the substrate 11, and a second metal layer 102 arranged on the top surface of the substrate 11. A metal layer is plated in the first arc groove 109, and the first metal layer 101 and the second metal layer 102 are electrically connected based on the metal layer of the first arc groove 109, that is, the first metal layer 101 and the second metal layer 102 are electrically connected based on the first arc groove 109.

[0053] The positive terminal of the LED chip 3 is electrically connected to the second metal layer 102 based on a welding wire, and the first metal layer 101 is configured as a first input pin of the substrate 11. Based on the first input pin formed on the bottom surface of the circuit board 1 by the first metal layer 101, the pins of the optocoupler device can be concentrated at the bottom position so that the optocoupler device is electrically connected to an external working circuit.

[0054] Specifically, the first circuit arrangement structure also includes a second arc groove 110 arranged on the side wall of the substrate 11, a third metal layer 103 arranged on the bottom surface of the substrate 11, and a fourth metal layer 104 arranged on the top surface of the substrate 11. The surface of the second arc groove 110 is plated with a metal layer, and the electrical connection between the third metal layer 103 and the fourth metal layer 104 is achieved based on the metal layer of the second arc groove 110.

[0055] The third metal layer 103 and the fourth metal layer 104 are electrically connected based on the third arc groove 111 , the negative terminal of the LED chip 3 is electrically connected to the fourth metal layer 104 based on a welding wire, and the third metal layer 103 is configured as a second input pin of the substrate 11 .

[0056] Specifically, the second circuit arrangement structure includes a third arc groove 111 arranged on the side wall of the substrate 11 and a fifth metal layer 105 arranged on the bottom surface of the substrate 11. The fifth metal layer 105 is electrically connected to the third arc groove 111, and the fifth metal layer 105 is configured as the first output pin of the substrate 11.

[0057] The second circuit arrangement structure includes a fourth arc groove 112 arranged on the side wall of the substrate 11 and a sixth metal layer 106 arranged on the bottom surface of the substrate 11. The sixth metal layer 106 is electrically connected to the fourth arc groove 112, and the sixth metal layer 106 is configured as a second output pin of the substrate 11.

[0058] Furthermore, when the first input pin and the second input pin are connected to an external working circuit, a working voltage is applied to the LED chip 3 based on a driving power supply, so that the LED chip 3 outputs an optical signal to the photoelectric generator 4 .

[0059] When the first output pin and the second output pin are connected to an external working circuit, the electrical energy converted from light energy is output to an external device based on the first output pin and the second output pin to meet the working driving requirements of the external device.

[0060] Based on the first arc groove 109, the second arc groove 110, the third arc groove 111 and the fourth arc groove 112, the connection structure of the circuit layer 10 of the optoelectronic coupling device is distributed on the side wall of the optoelectronic coupling device, thereby reducing the concentration of heat inside the optoelectronic coupling device and improving the heat dissipation efficiency of the optoelectronic coupling device.

[0061] The photoelectric coupling device forms a bottom electrical connection structure based on the cooperation of the first metal layer 101, the third metal layer 103, the fifth metal layer 105 and the sixth metal layer 106, so that the electrical electrodes of the photoelectric coupling device can be concentrated at the bottom of the photoelectric coupling device, thereby improving the simplicity of the device structure arrangement.

[0062] Furthermore, by setting the circuit board 1 as a single-bracket packaging structure, the overall size of the optocoupler device is reduced, and the electrical connection electrodes of the optocoupler device are integrated on the circuit board 1, so that the optocoupler device is configured as a surface-mount device, thereby improving the convenience of electrical connection of the optocoupler device.

[0063] Furthermore, by forming the first arc groove 109, the second arc groove 110, the third arc groove 111 and the fourth arc groove 112 on the circumferential side wall of the circuit board 1, the side wall heat dissipation capacity of the optocoupler device is improved, and the optocoupler device can be electrically connected to the side wall through the first arc groove 109, the second arc groove 110, the third arc groove 111 and the fourth arc groove 112, thereby improving the convenience of electrical connection of the optocoupler device.

[0064] Specifically, a seventh metal layer 107 and an eighth metal layer 108 are disposed on the top surface of the substrate 11, the seventh metal layer 107 is arranged corresponding to the fifth metal layer 105, the eighth metal layer 108 is arranged corresponding to the sixth metal layer 106, and a plurality of electrical connection through holes are disposed in the substrate 11, and the plurality of electrical connection through holes are divided into a first electrical connection through hole array 113 and a second electrical connection through hole array 114 which are symmetrically distributed;

[0065] The fifth metal layer 105 and the seventh metal layer 107 are electrically connected based on the first electrical connection through-hole array 113 , and the sixth metal layer 106 and the eighth metal layer 108 are electrically connected based on the second electrical connection through-hole array 114 .

[0066] The first electrical connection through-hole array 113 corresponds to penetrating the fifth metal layer 105 and the seventh metal layer 107, and the second electrical connection through-hole array 114 corresponds to penetrating the sixth metal layer 106 and the eighth metal layer 108. Based on the plurality of electrical connection through-holes, the heat conduction performance of the substrate 11 can be improved, thereby improving the heat dissipation performance of the optoelectronic coupling device and extending the service life of the optoelectronic coupling device.

[0067] Specifically, the MOS chip 5 includes a first sub-chip 51 and a second sub-chip 52. The first sub-chip 51 is correspondingly arranged on the seventh metal layer 107, and the second sub-chip 52 is correspondingly arranged on the eighth metal layer 108. The first sub-chip 51 is electrically connected to the seventh metal layer 107, and the second sub-chip 52 is electrically connected to the eighth metal layer 108.

[0068] Specifically, the first sub-chip 51 is fixed on the seventh metal layer 107 based on a conductive adhesive, and the second sub-chip 52 is fixed on the eighth metal layer 108 based on a conductive adhesive. The first sub-chip 51 is electrically connected to the seventh metal layer 107 through the conductive adhesive, so that the fifth metal layer 105, the first electrically connected through-hole array 113, the seventh metal layer 107 and the chip electrodes of the first sub-chip 51 are electrically connected.

[0069] The second sub-chip 52 is electrically connected to the eighth metal layer 108 through the conductive adhesive, so that the sixth metal layer 106 , the second electrical connection through-hole array 114 , the eighth metal layer 108 and the chip electrodes of the second sub-chip 52 are electrically connected.

[0070] Furthermore, the first metal layer 101, the second metal layer 102, the third metal layer 103, the fourth metal layer 104, the fifth metal layer 105, the sixth metal layer 106, the seventh metal layer 107 and the eighth metal layer 108 are copper foils, and the first metal layer 101, the second metal layer 102, the third metal layer 103, the fourth metal layer 104, the fifth metal layer 105, the sixth metal layer 106, the seventh metal layer 107 and the eighth metal layer 108 are prepared on the substrate 11 based on the copper plating process, which can meet the electrode setting requirements of the photoelectric coupling device and improve the structural compactness of the photoelectric coupling device.

[0071] Specifically, the source pad of the first sub-chip 51 and the source pad of the second sub-chip 52 are connected based on metal wire bonding, so that the first sub-chip 51 and the second sub-chip 52 are electrically connected, so as to adjust the output current of the optocoupler device based on the photoelectric signal conversion between the LED chip 3 and the photoelectric generator 4.

[0072] Specifically, the drain of the first sub-chip 51 is electrically connected to the seventh metal layer 107, the first electrically connected through-hole array 113 and the fifth metal layer 105 based on conductive adhesive, and the drain of the second sub-chip 52 is electrically connected to the eighth metal layer 108, the second electrically connected through-hole array 114 and the sixth metal layer 106 based on conductive adhesive.

[0073] The gate of the first sub-chip 51 is electrically connected to the P electrode of the photoelectric generator 4 based on a bonding wire, so that after the photoelectric generator 4 converts the light signal emitted by the LED chip 3, the gate voltage of the first sub-chip 51 and the second sub-chip 52 is changed, thereby adjusting the current output intensity of the first sub-chip 51 and the second sub-chip 52 to meet the working drive requirements of the optoelectronic coupling device.

[0074] Specifically, the spacing between the first metal layer 101 and the fifth metal layer 105 is h1, and the value range of h1 is: 0.5mm≤h1≤1mm; the spacing between the third metal layer 103 and the sixth metal layer 106 is h2, and the value range of h2 is 0.5mm≤h2≤1mm; the spacing between the first metal layer 101 and the fifth metal layer 105, and between the third metal layer 103 and the sixth metal layer 106 is greater than 0.5mm, so that there is sufficient electrical insulation distance between the first metal layer 101 and the fifth metal layer 105, and between the third metal layer 103 and the sixth metal layer 106 to avoid short circuit of the optoelectronic coupling device when soldering solder paste.

[0075] Specifically, the spacing between the first metal layer 101 and the third metal layer 103 is h3, and the value range of h3 is: 1.5mm≤h3≤5mm; the spacing between the fifth metal layer 105 and the sixth metal layer 106 is h4, and the value range of h4 is: 1.5mm≤h4≤5mm, which meets the international standard IEC61010-1 of the safety specification document, so that the structural arrangement of the optocoupler meets the electrical isolation requirements.

[0076] Specifically, the photosensitive position of the photoelectric generator 4 is coated with a light-transmitting layer 7. Based on the light-transmitting layer 7, the concentration of the light signal emitted by the LED chip 3 in the photoelectric generator 4 can be improved, and the photosensitivity efficiency of the photoelectric generator 4 to the light emitted by the LED chip 3 can be improved, thereby improving the working reliability of the photoelectric coupling device.

[0077] Furthermore, the thickness of the light-transmitting layer 7 is h5, and the value range of h5 is: 15μm≤h5≤50μm. The light-transmitting layer 7 is arranged between the photoelectric generator 4 and the LED chip 3. Based on the light-transmitting layer 7, the optical signal transmission between the LED chip 3 and the photoelectric generator 4 can be realized, and based on the thickness of the light-transmitting layer 7 of 15 to 50μm, the optical signal transmission path between the LED chip 3 and the photoelectric generator 4 can be shortened.

[0078] Specifically, the material of the light-transmitting layer 7 can be silicon dioxide. The light-transmitting layer 7 is formed in the photosensitive area of ​​the photoelectric generator 4 based on the silicon dioxide material, which effectively improves the photosensitivity of the photoelectric generator 4 to the LED chip 3, and the isolation voltage of the silicon dioxide is greater than 400V / um, so that the input and output ends of the photoelectric coupling device have an isolation withstand voltage of more than 5kV.

[0079] Furthermore, the material of the light-transmitting layer 7 may also be a polyimide film, and the heat insulation withstand voltage is between 200 and 300 V / um, which can meet the isolation withstand voltage requirements of the photoelectric coupling device and improve the photosensitivity of the photoelectric generator 4.

[0080] Specifically, the photoelectric generator 4 is configured as a chip with a PNP structure, that is, two P electrodes are located at the top of the chip, and the N electrode is located at the bottom of the chip. The N pole of the photoelectric generator 4 is fixed to the first sub-chip 51 and the second sub-chip 52 based on insulating adhesive bonding, so that the substrate 11 and the MOS chip 5 can support the photoelectric generator 4, and adjust the position of the photoelectric generator 4 between the first sub-chip 51 and the second sub-chip 52, which can meet the electrical connection requirements between the photoelectric generator 4 and the MOS chip 5.

[0081] Furthermore, the photoelectric generator 4 may be a PVG (Photovoltaic Generator) chip, i.e., a chip that converts light energy into electrical energy using the photovoltaic effect. The PVG chip captures the light energy emitted by the LED chip 3 and directly converts the light energy into electrical energy using the photovoltaic effect.

[0082] Furthermore, the photoelectric generator 4 can also be configured as a PDA (Photo Diode Array) chip, which is a diode array chip, composed of a series of photodiodes closely arranged on crystalline silicon, each diode being equivalent to an exit slit of a monochromator. When light shines on these diodes, photons excite electrons in the diodes, thereby generating current.

[0083] Specifically, the photoelectric coupling device also includes a glue layer 6, which is coated on the LED chip 3 and can protect the LED chip 3. The glue layer 6 can be made of silicone. The glue layer 6 based on silicone material improves the heat dissipation efficiency of the LED chip 3.

[0084] Specifically, the optoelectronic coupling device also includes a plastic sealing layer 2, which covers the top surface of the circuit board 1, and the MOS chip 5, the photoelectric generator 4 and the LED chip 3 are accommodated in the plastic sealing layer 2. The plastic sealing layer 2 is configured on the top surface of the circuit board 1, and can perform plastic sealing protection on the MOS chip 5, the photoelectric generator 4, the LED chip 3 and the first metal layer 101, the second metal layer 102 and other structures. At the same time, the connecting wires between the LED chip 3, the photoelectric generator 4 and the MOS chip 5 can be plastic sealed to improve the structural stability of the optoelectronic coupling device.

[0085] The plastic encapsulation layer 2 is a light-proof structure. Based on the plastic encapsulation layer 2, the interference of external ambient light on the optical signal transmission between the LED chip 3 and the photoelectric generator 4 can be avoided, thereby improving the working stability and reliability of the photoelectric coupling device.

[0086] Furthermore, the material of the plastic sealing layer 2 is epoxy resin, which has high adhesion. At the same time, epoxy resin has low shrinkage when solidified and generates small internal stress, which also helps to improve the adhesion strength and meet the plastic sealing requirements of the optocoupler device.

[0087] Black epoxy resin is preferred, which has good light-isolating properties and can prevent the leakage of light signals from the LED chip 3 and avoid the influence of external ambient light on the internal light energy absorption and conversion of the photoelectric coupling device.

[0088] Furthermore, by setting the LED chip 3 and the photoelectric generator 4 to face the solid crystal distribution, and by plastic-sealing the LED chip 3, the MOS chip 5 and the photoelectric generator 4 once, the plastic-sealing requirements of the optoelectronic coupling device can be met, the plastic-sealing steps of the optoelectronic coupling device can be simplified, and the consistency and processing efficiency of the optoelectronic coupling device can be improved.

[0089] The embodiment of the present invention provides a photoelectric coupling device. By integrating a MOS chip 5 on a circuit board 1 and configuring an LED chip 3 and a photoelectric generator 4 on the MOS chip 5 so that the die bonding is aligned, the structure of the photoelectric coupling device is compact, the light transmission path inside the photoelectric coupling device is shortened, the light transmission efficiency is improved, and the device trigger current is reduced exponentially, which can effectively reduce the power consumption of the photoelectric coupling device and extend the service life of the photoelectric coupling device.

[0090] A person skilled in the art may understand that all or part of the steps in the various methods of the above embodiments may be completed by instructing related hardware through a program, and the program may be stored in a computer-readable storage medium, and the storage medium may include: a read-only memory (ROM), a random access memory (RAM), a disk or an optical disk, etc.

[0091] In addition, the above provides a detailed introduction to the embodiments of the present invention. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A photoelectric coupling device, characterized in that: The photoelectric coupling device includes: a circuit board, a MOS chip electrically connected to the top surface of the circuit board, a photoelectric generator arranged on the MOS chip, and an LED chip fixed on the photoelectric generator; The light emitting surface of the LED chip faces the photosensitive surface of the photoelectric generator, the LED chip and the photoelectric generator are arranged opposite to each other in a solid-crystal manner, and the LED chip is electrically connected to the input end of the circuit board based on the welding wire, and the photoelectric generator is electrically connected to the MOS chip based on the welding wire.

2. The optocoupler device according to claim 1, wherein: The circuit board comprises a substrate and a circuit layer covering the substrate; The circuit layer includes a first circuit arrangement structure for connecting the LED chip and a second circuit arrangement structure for connecting the photoelectric generator.

3. The optocoupler device according to claim 2, characterized in that: The thickness of the substrate is H, and the value range of H is: 0.1mm≤H≤0.5mm.

4. The optocoupler device according to claim 2, characterized in that: The first circuit arrangement mechanism includes a first arc groove arranged on the side wall of the substrate, a first metal layer arranged on the bottom surface of the substrate, and a second metal layer arranged on the top surface of the substrate; The first metal layer and the second metal layer are electrically connected based on the first arc groove, the positive terminal of the LED chip is electrically connected to the second metal layer based on a welding wire, and the first metal layer is configured as a first input pin of the substrate.

5. The photoelectric coupling device according to claim 4, characterized in that: The first circuit arrangement structure further includes a second arc groove arranged on the side wall of the substrate, a third metal layer arranged on the bottom surface of the substrate, and a fourth metal layer arranged on the top surface of the substrate; The third metal layer and the fourth metal layer are electrically connected based on the third arc groove, the negative terminal of the LED chip is electrically connected to the fourth metal layer based on a welding wire, and the third metal layer is configured as a second input pin of the substrate.

6. The photoelectric coupling device according to claim 5, characterized in that: The second circuit arrangement structure includes a third arc groove arranged on the side wall of the substrate and a fifth metal layer arranged on the bottom surface of the substrate; The fifth metal layer is electrically connected to the third arc slot, and the fifth metal layer is configured as a first output pin of the substrate.

7. The optocoupler device according to claim 6, characterized in that: The second circuit arrangement structure includes a fourth arc groove arranged on the side wall of the substrate and a sixth metal layer arranged on the bottom surface of the substrate; The sixth metal layer is electrically connected to the fourth arc slot, and the sixth metal layer is configured as a second output pin of the substrate.

8. The optocoupler device according to claim 7, characterized in that: A seventh metal layer and an eighth metal layer are disposed on the top surface of the substrate, the seventh metal layer is arranged corresponding to the fifth metal layer, and the eighth metal layer is arranged corresponding to the sixth metal layer; The substrate is provided with a plurality of electrical connection through holes, and the plurality of electrical connection through holes are divided into a first electrical connection through hole array and a second electrical connection through hole array which are symmetrically distributed; The fifth metal layer and the seventh metal layer are electrically connected based on the first electrical connection through hole array; The sixth metal layer and the eighth metal layer are electrically connected based on the second electrical connection through-hole array.

9. The optoelectronic coupling device according to claim 8, characterized in that: The MOS chip includes a first sub-chip and a second sub-chip, the first sub-chip is correspondingly arranged on the seventh metal layer, and the second sub-chip is correspondingly arranged on the eighth metal layer; The first sub-chip is electrically connected to the seventh metal layer, and the second sub-chip is electrically connected to the eighth metal layer.

10. The photoelectric coupling device according to claim 9, characterized in that: The first sub-chip is fixed to the region where the first electrical connection through-hole is located based on conductive adhesive, and the second sub-chip is fixed to the region where the second electrical connection through-hole is located based on conductive adhesive.

11. The photoelectric coupling device according to claim 9, characterized in that: The source pad of the first sub-chip and the source pad of the second sub-chip are connected based on metal wire bonding.

12. The photoelectric coupling device according to claim 7, characterized in that: The distance between the first metal layer and the fifth metal layer is h1, and the value range of h1 is: 0.5mm≤h1≤1mm; The distance between the third metal layer and the sixth metal layer is h2, and the value range of h2 is: 0.5mm≤h2≤1mm.

13. The optocoupler device according to claim 7, characterized in that: The distance between the first metal layer and the third metal layer is h3, and the value range of h3 is: 1.5mm≤h3≤5mm; The distance between the fifth metal layer and the sixth metal layer is h4, and the value range of h4 is: 1.5mm≤h4≤5mm.

14. The optocoupler device according to claim 1, wherein: The photosensitive position of the photoelectric generator is coated with a light-transmitting layer.

15. The optocoupler device according to claim 14, characterized in that: The thickness of the light-transmitting layer is h5, and the value range of h5 is: 15 μm≤h5≤50 μm.

16. The optocoupler device according to claim 15, characterized in that: The material of the light-transmitting layer is silicon dioxide, or the material of the light-transmitting layer is polyimide film.

17. The optocoupler device according to claim 1, wherein: The photoelectric coupling device further comprises a glue dispensing layer, and the glue dispensing layer is coated on the LED chip.

18. The electro-optical coupler according to claim 17, characterized in that The material of the glue dispensing layer is silicone.

19. The photoelectric coupling layer according to claim 1, characterized in that: The photoelectric coupling device further comprises a plastic packaging layer, which covers the top surface of the circuit board, and the MOS chip, the photoelectric generator and the LED chip are accommodated in the plastic packaging layer.

20. The optocoupler device according to claim 19, characterized in that: The plastic sealing layer is a light-proof structure.

21. The optocoupler device according to claim 20, characterized in that: The material of the plastic sealing layer is epoxy resin.

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