Diode integrated device structure and manufacturing method

Abstract

The invention relates to a diode integrated device structure and a manufacturing method. The LED device comprises a substrate, an LED element and a CRD element, wherein the LED element and the CRD element are arranged on the substrate, isolated through an isolation groove and connected through bridging metal. The LED element comprises an LED epitaxial structure, a first insulating layer, a transparent conductive layer and an LED bonding pad. The LED epitaxial structure comprises a first nucleating layer, a first buffer layer, a first semiconductor layer, an active layer and a second semiconductor layer. The CRD element comprises a CRD epitaxial structure, an ohmic contact layer, a second insulating layer and a CRD bonding pad. The CRD epitaxial structure comprises a second nucleating layer, a second buffer layer, a channel layer, a space layer, a barrier layer and a contact layer. The CRD element and the LED element are integrated on the same substrate to form a single integrated device, so that a black area in the lamp strip is reduced or eliminated, the overall lighting effect of the lamp strip is improved, and meanwhile, the integrated design is beneficial to simplifying the manufacturing process and reducing the production cost.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a diode integrated device structure and a manufacturing method thereof. Background Art

[0002] As the cornerstone of the modern electronics industry, semiconductor technology is widely used in the manufacture of various electronic devices, including diodes, transistors, integrated circuits, etc. With the continuous advancement of science and technology, the optimization of semiconductor materials and device structures continues to promote the improvement of the performance of electronic products. Among semiconductor materials, III-V semiconductors are widely used in high-efficiency light-emitting diodes (LEDs) and high-frequency and high-power electronic devices due to their excellent electron mobility and direct bandgap characteristics.

[0003] As an efficient and environmentally friendly light source, LED has been widely used in lighting, display, communication and other fields due to its advantages such as energy saving, long life and fast response speed. Especially in the field of lighting, LED lamps are widely accepted and promoted due to their high light efficiency, low energy consumption and flexible design. With the increasing demand for intelligent lighting and personalized lighting, LED light strips have been widely used as a flexible and diverse lighting solution.

[0004] LED light strips are usually composed of a resistor element plus multiple LED elements, which are used to control the current and protect the LED chips from overcurrent damage. The resistor element usually uses a rectifier diode, which is often made of dark materials and dark in color. In the traditional LED light strip design, the resistor element forms a clear black area on the surface of the light strip, affecting the overall visual effect and light efficiency. Summary of the invention

[0005] To this end, the technical problem to be solved by the present invention is to overcome the problem in the prior art that due to the dark characteristics of the resistance elements in the LED light strip, an obvious black area appears on the surface of the light strip, thereby affecting the overall visual effect and lighting effect, and by integrating the rectifier diode and the LED element on the same substrate and integrating them into the light strip, the black area of ​​the light strip is improved and the overall lighting effect of the light strip is enhanced. At the same time, the integrated design helps to simplify the manufacturing process and reduce production costs.

[0006] In order to solve the above technical problems, in a first aspect, the present invention provides a diode integrated device structure, comprising:

[0007] substrate;

[0008] The LED element and the CRD element are respectively arranged on the substrate and an isolation groove is arranged between the two; wherein the LED element includes:

[0009] The LED epitaxial structure comprises a first nucleation layer, a first buffer layer, a first semiconductor layer, an active layer and a second semiconductor layer sequentially arranged along the surface of the substrate; wherein a Mesa step is arranged along the LED epitaxial structure, and the step surface of the Mesa step extends to the first semiconductor layer;

[0010] A first insulating layer, disposed on the second semiconductor layer;

[0011] a transparent conductive layer, disposed on the second semiconductor layer and in contact with the first insulating layer;

[0012] LED pads, respectively contacting the transparent conductive layer, the first insulating layer and the second semiconductor layer;

[0013] Wherein, the CRD element comprises:

[0014] A CRD epitaxial structure, comprising a second nucleation layer, a second buffer layer, a channel layer, a space layer, a barrier layer and a contact layer sequentially arranged along the surface of the substrate, and CRD steps extending to the second buffer layer are arranged along both sides of the CRD epitaxial structure, wherein the CRD step on one side extends to the isolation trench;

[0015] An ohmic contact layer, disposed on the contact layer and extending onto the two CRD steps;

[0016] A second insulating layer, covering the CRD step, the ohmic contact layer, the contact layer, the isolation trench and extending to the step surface of the Mesa step;

[0017] A CRD pad is disposed on the second insulating layer and passes through the second insulating layer to contact the ohmic contact layer;

[0018] Wherein, the diode integrated device structure further includes:

[0019] A bridging metal, passing through the second insulating layer and making Schottky contact with the contact layer, and extending from the ohmic contact layer on a side close to the LED element to a step surface of the Mesa step;

[0020] A device insulating protection layer covers the transparent conductive layer, the Mesa step, the bridging metal and the second insulating layer.

[0021] In one embodiment of the present invention, the ratio of the width of the LED element to the width of the CRD element is 0.5-100.

[0022] In one embodiment of the present invention, the number of the CRD elements is 1 to 10, and the number of the LED element is 1.

[0023] In one embodiment of the present invention, when there are multiple CRD elements, the multiple CRD elements are connected in series or in parallel and then connected in series with the LED element as a whole.

[0024] In a second aspect, the present invention provides a diode integrated device structure, comprising:

[0025] substrate;

[0026] The LED element and the CRD element are respectively arranged on the substrate and an isolation groove is arranged between the two; wherein the LED element includes:

[0027] The LED epitaxial structure comprises a first nucleation layer, a first buffer layer, a first semiconductor layer, an active layer and a second semiconductor layer sequentially arranged along the surface of the substrate; wherein a Mesa step is arranged along the LED epitaxial structure, and the step surface of the Mesa step extends to the first semiconductor layer;

[0028] A first insulating layer, disposed on the second semiconductor layer;

[0029] a transparent conductive layer, disposed on the second semiconductor layer and in contact with the first insulating layer;

[0030] a first LED pad, contacting the transparent conductive layer, the first insulating layer and the second semiconductor layer respectively;

[0031] Wherein, the CRD element comprises:

[0032] A CRD epitaxial structure, comprising a second nucleation layer, a second buffer layer, a channel layer, a space layer, a barrier layer and a contact layer sequentially arranged along the surface of the substrate, and CRD steps extending to the second buffer layer are arranged along both sides of the CRD epitaxial structure, wherein the CRD step on one side extends to the isolation trench;

[0033] An ohmic contact layer, disposed on the contact layer and extending onto the two CRD steps;

[0034] A second insulating layer, covering the CRD step, the ohmic contact layer, the contact layer, the isolation trench and extending to the step surface of the Mesa step;

[0035] A first CRD pad is disposed on the second insulating layer and contacts the ohmic contact layer through the second insulating layer;

[0036] A second CRD pad passes through the second insulating layer and makes Schottky contact with the contact layer, and contacts the ohmic contact layer; or a Schottky contact layer is provided, the Schottky contact layer passes through the second insulating layer and makes Schottky contact with the contact layer, and the second CRD pad contacts the ohmic contact layer, the second insulating layer, and the Schottky contact layer, respectively;

[0037] Wherein, the LED element further includes a second LED soldering pad, and the second LED soldering pad is in contact with the second insulating layer and the step surface of the Mesa step respectively;

[0038] Wherein, the diode integrated device structure further includes a device insulating protection layer, and the device insulating protection layer covers the transparent conductive layer, the Mesa step and the second insulating layer.

[0039] In one embodiment of the present invention, the ratio of the width of the LED element to the width of the CRD element is 0.5-100.

[0040] In one embodiment of the present invention, the number of the CRD elements is 1 to 10, and the number of the LED element is 1.

[0041] In one embodiment of the present invention, when there are multiple CRD elements, the multiple CRD elements are connected in series or in parallel and then connected in series with the LED element as a whole.

[0042] In a third aspect, the present invention provides an LED light strip, comprising independent LED components and a diode integrated device structure;

[0043] The diode integrated device structure and the LED independent component are connected in series or in parallel, and the quantity ratio of the diode integrated device structure to the LED independent component is 1:1 to 1:20.

[0044] In a fourth aspect, the present invention provides a method for manufacturing a diode integrated device structure, comprising:

[0045] S1. Providing a substrate, and manufacturing an LED epitaxial structure on the substrate, including sequentially growing a nucleation layer, a buffer layer, a first semiconductor layer, an active layer, and a second semiconductor layer on the substrate, and manufacturing a SiO2 mask layer on the second semiconductor layer;

[0046] S2, etching the SiO2 mask layer and the LED epitaxial structure to form a CRD region, wherein the CRD region extends from a portion of the surface of the SiO2 mask layer to the buffer layer and exposes a portion of the surface of the buffer layer;

[0047] S3, fabricating a first CRD epitaxial structure on the SiO2 mask layer, and fabricating a second CRD epitaxial structure in the CRD region, wherein the first CRD epitaxial structure and the second CRD epitaxial structure both include a channel layer, a space layer, a barrier layer, and a contact layer grown in sequence;

[0048] S4, etching an isolation groove between the LED epitaxial structure and the second CRD epitaxial structure to isolate the two; wherein the isolation groove extends to the surface of the substrate, and divides the nucleation layer into a first nucleation layer and a second nucleation layer, and divides the buffer layer into a first buffer layer and a second buffer layer, the first buffer layer and the first nucleation layer are located below the first semiconductor layer, and the second buffer layer and the second nucleation layer are located below the channel layer;

[0049] S5, etching CRD steps extending to the second buffer layer on both sides of the second CRD epitaxial structure;

[0050] S6, manufacturing an ohmic contact metal structure on the two CRD steps, and forming an ohmic contact layer by using a high temperature alloy;

[0051] S7, removing the SiO2 mask layer and the first CRD epitaxial structure by wet etching;

[0052] S8, etching a Mesa step on the LED epitaxial structure, wherein the step surface of the Mesa step extends to the first semiconductor layer, and then forming an insulating layer; wherein the insulating layer includes a first insulating layer located on the second semiconductor layer, and a second insulating layer covering the two CRD steps, the ohmic contact layer, the contact layer, the isolation groove and extending to the step surface of the Mesa step;

[0053] S9, forming a transparent conductive layer on the second semiconductor layer and in contact with the first insulating layer;

[0054] S10, etching the second insulating layer to form a pad window and a Schottky contact window;

[0055] S11, manufacturing an LED pad, a CRD pad and a bridging metal; wherein the LED pad is in contact with the transparent conductive layer, the first insulating layer and the second semiconductor layer respectively, the CRD pad is in contact with the ohmic contact layer through the pad window, the bridging metal is in Schottky contact with the contact layer through the Schottky contact window, and extends from the ohmic contact layer close to one side of the LED epitaxial structure to the step surface of the Mesa step;

[0056] S12, manufacturing a device insulating protection layer, wherein the device insulating protection layer covers the transparent conductive layer, the Mesa step, the bridging metal and the second insulating layer.

[0057] The above technical solution of the present invention has the following advantages compared with the prior art:

[0058] The diode integrated device structure and manufacturing method described in the present invention integrates the CRD element (rectifier diode) and the LED element on the same substrate to form a single integrated device. Since the CRD element is no longer an independent element, but is integrated with the LED element, there is no independent black CRD element on the surface of the light strip, thereby reducing or eliminating the black area in the light strip and improving the overall light effect of the light strip. At the same time, the integrated design helps to simplify the manufacturing process and reduce production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] In order to make the contents of the present invention more clearly understood, the present invention is further described in detail below based on specific embodiments of the present invention in conjunction with the accompanying drawings.

[0060] Figure 1 It is a schematic diagram of the structure of the diode integrated device in Example 1 of the present invention.

[0061] Figure 2 It is a schematic diagram of the structure of the diode integrated device in Example 2 of the present invention.

[0062] Figure 3 It is a schematic diagram of the structure of the diode integrated device in Example 3 of the present invention.

[0063] Figure 4 It is a schematic diagram of the structure of the light strip in Embodiment 4 of the present invention.

[0064] Figure 5 It is a schematic diagram of the manufacturing method in Example 5 of the present invention (step S1).

[0065] Figure 6 It is a schematic diagram of the manufacturing method in Example 5 of the present invention (step S2).

[0066] Figure 7 It is a schematic diagram of the manufacturing method in Example 5 of the present invention (step S3).

[0067] Figure 8 It is a schematic diagram of the manufacturing method in Example 5 of the present invention (step S4).

[0068] Fig. 9 It is a schematic diagram of the manufacturing method in Example 5 of the present invention (step S5).

[0069] Fig.10It is a schematic diagram of the manufacturing method in Example 5 of the present invention (step S6).

[0070] Fig.11 It is a schematic diagram of the manufacturing method in Example 5 of the present invention (step S7).

[0071] Fig.12 It is a schematic diagram of the manufacturing method in Example 5 of the present invention (step S8).

[0072] Fig.13 It is a schematic diagram of the manufacturing method in Example 5 of the present invention (step S9).

[0073] Fig.14 It is a schematic diagram of the manufacturing method in Example 5 of the present invention (steps S10-S12).

[0074] Description of the Figures in the Specification:

[0075] 100, LED component; 200, CRD component; 300, isolation groove; 400, bridge metal; 500, device insulation protection layer; 600, SiO2 mask layer; 700, LED independent component; 800, light strip substrate; 900, packaging glue;

[0076] 1. Substrate; 1a. Nucleation layer; 1b. Buffer layer;

[0077] 2. LED epitaxial structure; 20. Mesa step; 21. First nucleation layer; 22. First buffer layer; 23. First semiconductor layer; 24. Active layer; 25. Second semiconductor layer;

[0078] 3. The first insulating layer;

[0079] 4. Transparent conductive layer;

[0080] 5. LED pad; 5a. first LED pad; 5b. third LED pad;

[0081] 6. CRD epitaxial structure; 6a. First CRD epitaxial structure; 6b. Second CRD epitaxial structure; 60. CRD step; 61. Second nucleation layer; 62. Second buffer layer; 63. Channel layer; 64. Space layer; 65. Barrier layer; 66. Contact layer;

[0082] 7. Ohmic contact layer;

[0083] 8. Second insulating layer;

[0084] 9, CRD pad; 9a, first CRD pad; 9b, second CRD pad; 9c, Schottky contact layer. DETAILED DESCRIPTION

[0085] The present invention is further described below in conjunction with the accompanying drawings and specific embodiments so that those skilled in the art can better understand the present invention and implement it, but the embodiments are not intended to limit the present invention.

[0086] In the present invention, if directions (up, down, left, right, front and back) are described, it is only for the convenience of describing the technical solution of the present invention, and does not indicate or imply that the technical features referred to must have a specific orientation, be constructed and operate in a specific orientation. Therefore, it cannot be understood as a limitation of the present invention.

[0087] In the present invention, "several" means one or more, "multiple" means more than two, "greater than", "less than", "exceed" and the like are understood to exclude the number itself; "above", "below", "within" and the like are understood to include the number itself. In the description of the present invention, if there is a description of "first" or "second", it is only used for the purpose of distinguishing technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0088] In the present invention, unless otherwise clearly defined, the words "set", "install", "connect" and the like should be understood in a broad sense, for example, they can be directly connected or indirectly connected through an intermediate medium; they can be fixedly connected or detachably connected or integrally formed; they can be mechanically connected or electrically connected or able to communicate with each other; they can be the internal connection of two elements or the interaction relationship between two elements. Those skilled in the art can reasonably determine the specific meanings of the above words in the present invention in combination with the specific content of the technical solution.

[0089] Example 1

[0090] Reference Figure 1 As shown, this embodiment provides a diode integrated device structure, including:

[0091] Substrate 1;

[0092] The LED element 100 and the CRD element 200 are respectively disposed on the substrate 1 and an isolation groove 300 is disposed between the two. The LED element 100 includes:

[0093] The LED epitaxial structure 2 comprises a first nucleation layer 21, a first buffer layer 22, a first semiconductor layer 23, an active layer 24 and a second semiconductor layer 25 which are sequentially arranged along the surface of the substrate 1; wherein a Mesa step 20 is arranged along the LED epitaxial structure 2, and the step surface of the Mesa step 20 extends to the first semiconductor layer 23;

[0094] A first insulating layer 3, disposed on the second semiconductor layer 25;

[0095] a transparent conductive layer 4, disposed on the second semiconductor layer 25 and in contact with the first insulating layer 3;

[0096] LED pads 5 are respectively in contact with the transparent conductive layer 4, the first insulating layer 3 and the second semiconductor layer 25;

[0097] Wherein, the CRD element 200 comprises:

[0098] The CRD epitaxial structure 6 comprises a second nucleation layer 61, a second buffer layer 62, a channel layer 63, a space layer 64, a barrier layer 65 and a contact layer 66 which are sequentially arranged along the surface of the substrate 1, and CRD steps 60 extending to the second buffer layer 62 are arranged along both sides of the CRD epitaxial structure 6, wherein the CRD step 60 on one side extends to the isolation trench 300;

[0099] An ohmic contact layer 7, disposed on the contact layer 66 and extending onto the two CRD steps 60;

[0100] a second insulating layer 8 covering the CRD step 60 , the ohmic contact layer 7 , the contact layer 66 , the isolation trench 300 and extending to the step surface of the Mesa step 20 ;

[0101] A CRD pad 9, disposed on the second insulating layer 8 and passing through the second insulating layer 8 to contact the ohmic contact layer 7;

[0102] Wherein, the diode integrated device structure further includes:

[0103] A bridge metal 400 passes through the second insulating layer 8 and makes Schottky contact with the contact layer 66 , and extends from the ohmic contact layer 7 on the side close to the LED element 100 to the step surface of the Mesa step 20 ;

[0104] The device insulating protection layer 500 covers the transparent conductive layer 4 , the Mesa step 20 , the bridging metal 400 and the second insulating layer 8 .

[0105] Specifically, the ratio LL / LC of the width dimension (LL) of the LED element 100 to the width dimension (LC) of the CRD element 200 is 0.5 to 100. Since the CRD element 200 is usually small in size, preferably, the ratio LL / LC is 4 to 10.

[0106] Specifically, the number of the CRD elements 200 is 1 to 10, and the number of the LED element 100 is 1, to meet different current control and protection requirements. In addition, when there are multiple CRD elements 200, the multiple CRD elements 200 are connected in series or in parallel and are connected in series with the LED element 100 as a whole.

[0107] By integrating the CRD element 200 and the LED element 100 on the same substrate 1 to form a single integrated device, the black area in the light strip is reduced or eliminated, thereby improving the overall light effect of the light strip.

[0108] Example 2

[0109] Reference Figure 2 As shown, this embodiment provides a diode integrated device structure, including:

[0110] Substrate 1;

[0111] The LED element 100 and the CRD element 200 are respectively disposed on the substrate 1 and an isolation groove 300 is disposed between the two. The LED element 100 includes:

[0112] The LED epitaxial structure 2 comprises a first nucleation layer 21, a first buffer layer 22, a first semiconductor layer 23, an active layer 24 and a second semiconductor layer 25 which are sequentially arranged along the surface of the substrate 1; wherein a Mesa step 20 is arranged along the LED epitaxial structure 2, and the step surface of the Mesa step 20 extends to the first semiconductor layer 23;

[0113] A first insulating layer 3, disposed on the second semiconductor layer 25;

[0114] a transparent conductive layer 4, disposed on the second semiconductor layer 25 and in contact with the first insulating layer 3;

[0115] A first LED pad 5a, respectively in contact with the transparent conductive layer 4, the first insulating layer 3 and the second semiconductor layer 25;

[0116] Wherein, the CRD element 200 comprises:

[0117] The CRD epitaxial structure 6 comprises a second nucleation layer 61, a second buffer layer 62, a channel layer 63, a space layer 64, a barrier layer 65 and a contact layer 66 which are sequentially arranged along the surface of the substrate 1, and CRD steps 60 extending to the second buffer layer 62 are arranged along both sides of the CRD epitaxial structure 6, wherein the CRD step 60 on one side extends to the isolation trench 300;

[0118] An ohmic contact layer 7, disposed on the contact layer 66 and extending onto the two CRD steps 60;

[0119] a second insulating layer 8 covering the CRD step 60 , the ohmic contact layer 7 , the contact layer 66 , the isolation trench 300 and extending to the step surface of the Mesa step 20 ;

[0120] A first CRD pad 9a, disposed on the second insulating layer 8 and passing through the second insulating layer 8 to contact the ohmic contact layer 7;

[0121] A second CRD pad 9 b passes through the second insulating layer 8 and makes Schottky contact with the contact layer 66 , and contacts with the ohmic contact layer 7 ;

[0122] The LED element 100 further includes a second LED soldering pad 5, and the second LED soldering pad 5 is in contact with the second insulating layer 8 and the step surface of the Mesa step 20 respectively;

[0123] The diode integrated device structure further includes a device insulating protection layer 500 , and the device insulating protection layer 500 covers the transparent conductive layer 4 , the Mesa step 20 and the second insulating layer 8 .

[0124] Specifically, the ratio LL / LC of the width dimension (LL) of the LED element 100 to the width dimension (LC) of the CRD element 200 is 0.5 to 100. Since the CRD element 200 is usually small in size, preferably, the ratio LL / LC is 4.

[0125] Specifically, the number of the CRD elements 200 is 1 to 10, and the number of the LED element 100 is 1. In addition, when there are multiple CRD elements 200, the multiple CRD elements 200 are connected in series or in parallel and are connected in series with the LED element 100 as a whole.

[0126] Compared with Example 1, the LED element 100 and the CRD element 200 are relatively independent and do not use the bridging metal 400, thereby enhancing the flexibility of the connection method of the LED element 100 and the CRD element 200, and can be connected in a variety of ways to adapt to different circuit designs and application scenarios.

[0127] Example 3

[0128] Reference Figure 3As shown, this embodiment provides a diode integrated device structure, which is different from Embodiment 2 in that a Schottky contact layer 9c is provided in the CRD element 200 of the diode integrated device structure, the Schottky contact layer 9c passes through the second insulating layer 8 and makes Schottky contact with the contact layer 66, and the second CRD pad 9b is in contact with the ohmic contact layer 7, the second insulating layer 8 and the Schottky contact layer 9c respectively. The rest of the structure is the same as that of Embodiment 2.

[0129] In this embodiment, a Schottky contact layer 9 c is separately provided in the CRD element 200 , so as to more accurately control the turn-on voltage and improve the working efficiency and stability of the entire integrated device.

[0130] Example 4

[0131] Reference Figure 4 As shown, this embodiment provides an LED light strip, including an LED independent component 700, and the diode integrated device structure in Example 1 and / or Example 2 and / or Example 3; wherein the diode integrated device structure and the LED independent component 700 are connected in series or in parallel, and are installed on a light strip substrate 800 through a packaging glue 900.

[0132] The ratio of the number of the diode integrated device structure to the number of the LED independent elements 700 is 1:1 to 1:20, which can meet the diverse needs of lighting.

[0133] Example 5

[0134] This embodiment provides a method for manufacturing the diode integrated device structure in Embodiment 1, comprising:

[0135] S1, providing a substrate 1, and manufacturing an LED epitaxial structure 2 on the substrate 1, including sequentially growing a nucleation layer 1a, a buffer layer 1b, a first semiconductor layer 23, an active layer 24, and a second semiconductor layer 25 on the substrate 1, and manufacturing a SiO2 mask layer 600 on the second semiconductor layer 25. Figure 5 shown.

[0136] The substrate 1 is made of sapphire (AlO), and SiC or GaN can also be used; the nucleation layer 1a is made of AlN (aluminum nitride); the buffer layer 1b is made of u-GaN (unadopant gallium nitride); the first semiconductor layer 23 is made of n-GaN (gallium nitride doped with silicon); the active layer 24 is made of MQW (multiple quantum well structure), which is usually obtained by alternating growth of InGaN / GaN; the second semiconductor layer 25 is made of p-GaN (gallium nitride doped with magnesium);

[0137] S2, etching the SiO2 mask layer 600 and the LED epitaxial structure 2 to form a CRD region, wherein the CRD region extends from a portion of the surface of the SiO2 mask layer 600 to the buffer layer 1b and exposes a portion of the surface of the buffer layer 1b. Figure 6 shown.

[0138] S3, fabricating a first CRD epitaxial structure 6a on the SiO2 mask layer 600, and fabricating a second CRD epitaxial structure 6b in the CRD region, wherein the first CRD epitaxial structure 6a and the second CRD epitaxial structure 6b both include a channel layer 63, a space layer 64, a barrier layer 65 and a contact layer 66 grown in sequence. Figure 7 shown.

[0139] The channel layer 63 is made of GaN (gallium nitride); the space layer 64 is made of AlN (aluminum nitride); the barrier layer 65 is made of AlGaN (aluminum gallium nitride); and the contact layer 66 is made of p-GaN (magnesium-doped gallium nitride).

[0140] S4, etching an isolation groove 300 between the LED epitaxial structure 2 and the second CRD epitaxial structure 6b to isolate the two; wherein the isolation groove 300 extends to the surface of the substrate 1, and divides the nucleation layer 1a into a first nucleation layer 21 and a second nucleation layer 61, and divides the buffer layer 1b into a first buffer layer 22 and a second buffer layer 62, wherein the first buffer layer 22 and the first nucleation layer 21 are located below the first semiconductor layer 23, and the second buffer layer 62 and the second nucleation layer 61 are located below the channel layer 63. Figure 8 shown.

[0141] S5, etching CRD steps 60 extending to the second buffer layer 62 on both sides of the second CRD epitaxial structure 6b. Fig. 9 shown.

[0142] S6, fabricating an ohmic contact metal structure on the two CRD steps 60, and forming an ohmic contact layer 7 by using a high temperature alloy. Fig.10 shown.

[0143] The ohmic contact layer 7 is made of Ti / Al / Ti / Au (metal stacking structure).

[0144] S7, removing the SiO2 mask layer 600 and the first CRD epitaxial structure 6a by wet etching. Fig.11 shown.

[0145] S8, etching a Mesa step 20 on the LED epitaxial structure 2, wherein the step surface of the Mesa step 20 extends to the first semiconductor layer 23, and then forming an insulating layer; wherein the insulating layer includes a first insulating layer 3 located on the second semiconductor layer 25, and a second insulating layer 8 covering the two CRD steps 60, the ohmic contact layer 7, the contact layer 66, the isolation groove 300 and extending to the step surface of the Mesa step 20. Fig.12 shown.

[0146] Among them, the insulating layer adopts SiO.

[0147] S9, forming a transparent conductive layer 4 on the second semiconductor layer 25 and in contact with the first insulating layer 3. Fig.13 shown.

[0148] The transparent conductive layer 4 is made of ITO (indium tin oxide) or IZO (indium zinc oxide).

[0149] S10, etching the second insulating layer 8 to form a pad window and a Schottky contact window.

[0150] S11, making LED pad 5, CRD pad 9 and bridge metal 400; wherein the LED pad 5 is in contact with the transparent conductive layer 4, the first insulating layer 3 and the second semiconductor layer 25 respectively, the CRD pad 9 is in contact with the ohmic contact layer 7 through the pad window, the bridge metal 400 is in Schottky contact with the contact layer 66 through the Schottky contact window, and extends from the ohmic contact layer 7 close to the side of the LED epitaxial structure 2 to the step surface of the Mesa step 20. Fig.14 shown.

[0151] The LED pad 5 , the CRD pad 9 and the bridge metal 400 may be made of metal (such as Au, Al, etc.).

[0152] S12, manufacturing a device insulating protective layer 500, wherein the device insulating protective layer 500 covers the transparent conductive layer 4, the Mesa step 20, the bridge metal 400 and the second insulating layer 8. Fig.14 shown.

[0153] The device insulating protection layer 500 is made of SiO, covers the device surface, and plays a role in mechanical protection and electrical insulation.

[0154] Through the above process steps, the efficient integration of the CRD element 200 and the LED element 100 is ensured, the production efficiency and product consistency are improved, and the manufacturing process is simplified and the cost is reduced.

[0155] Finally, it should be noted that the above specific implementation methods are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to examples, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the spirit and scope of the technical solution of the present invention, which should be included in the scope of the claims of the present invention.

Claims

1. A diode integrated device structure, characterized in that: include: Substrate (1); The LED element (100) and the CRD element (200) are respectively arranged on the substrate (1) and an isolation groove (300) is arranged between the two; wherein the LED element (100) comprises: The LED epitaxial structure (2) comprises a first nucleation layer (21), a first buffer layer (22), a first semiconductor layer (23), an active layer (24) and a second semiconductor layer (25) which are sequentially arranged along the surface of the substrate (1); wherein a Mesa step (20) is arranged along the LED epitaxial structure (2), and a step surface of the Mesa step (20) extends to the first semiconductor layer (23); A first insulating layer (3) is disposed on the second semiconductor layer (25); A transparent conductive layer (4) disposed on the second semiconductor layer (25) and in contact with the first insulating layer (3); LED solder pads (5) respectively contacting the transparent conductive layer (4), the first insulating layer (3) and the second semiconductor layer (25); Wherein, the CRD element (200) comprises: A CRD epitaxial structure (6), comprising a second nucleation layer (61), a second buffer layer (62), a channel layer (63), a space layer (64), a barrier layer (65) and a contact layer (66) arranged in sequence along the surface of the substrate (1), and CRD steps (60) extending to the second buffer layer (62) are arranged along both sides of the CRD epitaxial structure (6), wherein the CRD step (60) on one side extends to the isolation trench (300); An ohmic contact layer (7), disposed on the contact layer (66) and extending onto the two CRD steps (60); a second insulating layer (8), covering the CRD step (60), the ohmic contact layer (7), the contact layer (66), the isolation groove (300) and extending to the step surface of the Mesa step (20); A CRD pad (9) is disposed on the second insulating layer (8) and passes through the second insulating layer (8) to contact the ohmic contact layer (7); Wherein, the diode integrated device structure further includes: A bridging metal (400) passes through the second insulating layer (8) and makes Schottky contact with the contact layer (66), and extends from the ohmic contact layer (7) on a side close to the LED element (100) to the step surface of the Mesa step (20); A device insulating protection layer (500) covers the transparent conductive layer (4), the Mesa step (20), the bridging metal (400) and the second insulating layer (8).

2. A diode integrated device structure according to claim 1, characterized in that: The ratio of the width dimension of the LED element (100) to the width dimension of the CRD element (200) is 0.5-100.

3. A diode integrated device structure according to claim 1, characterized in that: The number of the CRD elements (200) is 1 to 10, and the number of the LED element (100) is 1.

4. A diode integrated device structure according to claim 3, characterized in that: When there are a plurality of CRD elements (200), the plurality of CRD elements (200) are connected in series or in parallel and are connected in series with the LED element (100) as a whole.

5. A diode integrated device structure, characterized in that: include: Substrate (1); The LED element (100) and the CRD element (200) are respectively arranged on the substrate (1) and an isolation groove (300) is arranged between the two; wherein the LED element (100) comprises: The LED epitaxial structure (2) comprises a first nucleation layer (21), a first buffer layer (22), a first semiconductor layer (23), an active layer (24) and a second semiconductor layer (25) which are sequentially arranged along the surface of the substrate (1); wherein a Mesa step (20) is arranged along the LED epitaxial structure (2), and a step surface of the Mesa step (20) extends to the first semiconductor layer (23); A first insulating layer (3) is disposed on the second semiconductor layer (25); A transparent conductive layer (4) disposed on the second semiconductor layer (25) and in contact with the first insulating layer (3); A first LED solder pad (5a) is respectively in contact with the transparent conductive layer (4), the first insulating layer (3) and the second semiconductor layer (25); Wherein, the CRD element (200) comprises: A CRD epitaxial structure (6), comprising a second nucleation layer (61), a second buffer layer (62), a channel layer (63), a space layer (64), a barrier layer (65) and a contact layer (66) arranged in sequence along the surface of the substrate (1), and CRD steps (60) extending to the second buffer layer (62) are arranged along both sides of the CRD epitaxial structure (6), wherein the CRD step (60) on one side extends to the isolation trench (300); An ohmic contact layer (7), disposed on the contact layer (66) and extending onto the two CRD steps (60); a second insulating layer (8), covering the CRD step (60), the ohmic contact layer (7), the contact layer (66), the isolation groove (300) and extending to the step surface of the Mesa step (20); A first CRD pad (9a) is disposed on the second insulating layer (8) and passes through the second insulating layer (8) to contact the ohmic contact layer (7); A second CRD pad (9b) passes through the second insulating layer (8) and makes Schottky contact with the contact layer (66), and contacts the ohmic contact layer (7); or a Schottky contact layer (9c) is provided, the Schottky contact layer (9c) passes through the second insulating layer (8) and makes Schottky contact with the contact layer (66), and the second CRD pad (9b) contacts the ohmic contact layer (7), the second insulating layer (8), and the Schottky contact layer (9c), respectively; Wherein, the LED element (100) further comprises a second LED soldering pad (5), and the second LED soldering pad (5) is in contact with the second insulating layer (8) and the step surface of the Mesa step (20) respectively; The diode integrated device structure further comprises a device insulating protection layer (500), wherein the device insulating protection layer (500) covers the transparent conductive layer (4), the Mesa step (20) and the second insulating layer (8).

6. A diode integrated device structure according to claim 5, characterized in that: The ratio of the width dimension of the LED element (100) to the width dimension of the CRD element (200) is 0.5-100.

7. The diode integrated device structure according to claim 5, characterized in that: The number of the CRD elements (200) is 1 to 10, and the number of the LED element (100) is 1.

8. A diode integrated device structure according to claim 7, characterized in that: When there are a plurality of CRD elements (200), the plurality of CRD elements (200) are connected in series or in parallel and are connected in series with the LED element (100) as a whole.

9. An LED light strip, characterized in that: It comprises an independent LED component (700) and a diode integrated device structure as described in any one of claims 1 to 4 or claims 5 to 8; The diode integrated device structure and the LED independent component (700) are connected in series or in parallel, and the quantity ratio of the diode integrated device structure to the LED independent component (700) is 1:1-1:

20.

10. A method for manufacturing a diode integrated device structure, characterized in that: include: S1. Providing a substrate (1), and manufacturing an LED epitaxial structure (2) on the substrate (1), comprising sequentially growing a nucleation layer (1a), a buffer layer (1b), a first semiconductor layer (23), an active layer (24), and a second semiconductor layer (25) on the substrate (1), and manufacturing a SiO2 mask layer (600) on the second semiconductor layer (25); S2, etching the SiO2 mask layer (600) and the LED epitaxial structure (2) to form a CRD region, wherein the CRD region extends from a portion of the surface of the SiO2 mask layer (600) to the buffer layer (1b), and exposes a portion of the surface of the buffer layer (1b); S3, fabricating a first CRD epitaxial structure (6a) on the SiO2 mask layer (600), and fabricating a second CRD epitaxial structure (6b) in the CRD region, wherein the first CRD epitaxial structure (6a) and the second CRD epitaxial structure (6b) both comprise a channel layer (63), a space layer (64), a barrier layer (65), and a contact layer (66) grown in sequence; S4, etching an isolation groove (300) between the LED epitaxial structure (2) and the second CRD epitaxial structure (6b) to isolate the two; wherein the isolation groove (300) extends to the surface of the substrate (1) and divides the nucleation layer (1a) into a first nucleation layer (21) and a second nucleation layer (61), and divides the buffer layer (1b) into a first buffer layer (22) and a second buffer layer (62), wherein the first buffer layer (22) and the first nucleation layer (21) are located below the first semiconductor layer (23), and the second buffer layer (62) and the second nucleation layer (61) are located below the channel layer (63); S5, etching CRD steps (60) extending to the second buffer layer (62) on both sides of the second CRD epitaxial structure (6b); S6, fabricating an ohmic contact metal structure on the two CRD steps (60), and forming an ohmic contact layer (7) using a high temperature alloy; S7, removing the SiO2 mask layer (600) and the first CRD epitaxial structure (6a) by wet etching; S8, etching a Mesa step (20) on the LED epitaxial structure (2), wherein the step surface of the Mesa step (20) extends to the first semiconductor layer (23), and then forming an insulating layer; wherein the insulating layer comprises a first insulating layer (3) located on the second semiconductor layer (25), and a second insulating layer (8) covering the two CRD steps (60), the ohmic contact layer (7), the contact layer (66), the isolation groove (300) and extending to the step surface of the Mesa step (20); S9, forming a transparent conductive layer (4) on the second semiconductor layer (25) and in contact with the first insulating layer (3); S10, etching the second insulating layer (8) to form a pad window and a Schottky contact window; S11, manufacturing an LED pad (5), a CRD pad (9) and a bridging metal (400); wherein the LED pad (5) is in contact with the transparent conductive layer (4), the first insulating layer (3) and the second semiconductor layer (25) respectively, the CRD pad (9) is in contact with the ohmic contact layer (7) through the pad window, the bridging metal (400) is in Schottky contact with the contact layer (66) through the Schottky contact window, and extends from the ohmic contact layer (7) on the side close to the LED epitaxial structure (2) to the step surface of the Mesa step (20); S12, manufacturing a device insulating protective layer (500), wherein the device insulating protective layer (500) covers the transparent conductive layer (4), the Mesa step (20), the bridging metal (400) and the second insulating layer (8).

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