Active control pre-heat ring for process temperature control

Abstract

An apparatus for heating a gas is described. The apparatus is a pre-heat ring and heater assembly positioned in a deposition chamber, such as an epitaxial deposition chamber. The pre-heat ring has a first portion configured to be heated using one or more heaters. The one or more heaters are disposed through a sidewall of the processing volume below the pre-heat ring and are configured to heat the pre-heat ring such that gas flowing over the pre-heat ring is also heated before flowing over the substrate. The one or more heaters may include two heaters disposed at a distal end of the first portion of the pre-heat ring. One or more temperature sensors are also configured to measure a temperature of the pre-heat ring.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to methods of processing substrates. More specifically, embodiments described herein relate to methods of heating a preheat ring and precursors within a semiconductor processing chamber. Background Art

[0002] Processing semiconductor substrates is used for a variety of applications, including the fabrication of integrated devices and microdevices. One substrate processing method includes depositing a material, such as a dielectric material or a conductive material, on an upper surface of a substrate in a processing chamber. For example, epitaxy is a deposition process that grows a thin, ultrapure layer (usually of silicon or germanium) on a substrate surface. The material may be deposited in a lateral flow chamber by flowing a process gas parallel to the surface of a substrate positioned on a support and thermally decomposing the process gas to deposit material from the process gas onto the substrate surface.

[0003] During epitaxial deposition, a process gas flows over the top surface of the substrate and susceptor. The process gas temperature is used to form a film or layer on the substrate. The temperature of the process gas varies between the front and back ends of the substrate during processing. Non-uniformity of the process gas results in non-uniform deposition along the length of the substrate. Non-uniform deposition is solved via rotation of the substrate, but a large amount of precursor gas is still lost and the growth rate at the edge of the substrate is still different from the growth rate in the center of the substrate.

[0004] Thus, there is a need for improved temperature control of process gases within a process chamber. Summary of the invention

[0005] In one embodiment, a processing chamber configured for use during semiconductor processing includes: a chamber body including a plurality of gas inlets on a first side of the chamber body and one or more exhaust outlets on a second side of the chamber body opposite the first side; a substrate support disposed within a processing volume of the chamber body; and a preheat ring assembly disposed between the plurality of gas inlets and the substrate support. The preheat ring assembly includes: a preheat ring; one or more heaters disposed adjacent to the preheat ring; and one or more temperature sensors disposed adjacent to the preheat ring.

[0006] In another embodiment, a preheat ring assembly configured for use in a semiconductor processing chamber includes: a preheat ring including a first preheat ring section and a second preheat ring section; one or more temperature sensors coupled to the first preheat ring section; and two or more preheaters coupled to the first preheat ring section and configured to heat the first preheat ring section. The two or more heaters include: a heater housing; a reflector disposed within the heater housing and forming a front heater volume; and a heating element disposed within the front heater volume.

[0007] A heater insert configured to heat a preheat ring in a semiconductor processing chamber includes a heater housing, the heater housing comprising: a transmissive portion; an opaque portion coupled to a distal end of the transmissive portion; and a heater base coupled to the distal end of the transmissive portion, opposite the transmissive portion, such that the opaque portion intersects a contact surface of the heater base and the contact surface has one or more grooves disposed therein; a reflector disposed within the heater housing and forming a front heater volume and a rear heater volume; and a heating element disposed within the front heater volume and within the transmissive portion of the heater housing. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] In order to be able to understand in detail the manner in which the above-mentioned features of the present disclosure are used, a more specific description of the present disclosure briefly summarized above may be made with reference to embodiments, some of which are shown in the accompanying drawings. However, it will be noted that the accompanying drawings only illustrate exemplary embodiments and are not to be considered as limiting the scope thereof, and other equally effective embodiments may be allowed.

[0009] Figure 1 is a schematic cross-sectional side view of a processing chamber according to an embodiment of the present disclosure.

[0010] Figure 2A is a schematic cross-sectional plan view of a processing chamber through a first plane according to an embodiment of the present disclosure.

[0011] Figure 2B is a schematic cross-sectional plan view of a processing chamber through a second plane according to an embodiment of the present disclosure.

[0012] Figure 3 According to the embodiment of the present disclosure Figure 1 Schematic partial cross-sectional view of a preheat ring assembly of a processing chamber.

[0013] Figure 4A According to one embodiment of the present disclosure Figure 1 Schematic partial cross-sectional view of a heater within a processing chamber.

[0014] Figure 4B According to another embodiment of the present disclosure Figure 1 Schematic partial cross-sectional view of a heater within a processing chamber.

[0015] Figure 4C According to another embodiment of the present disclosure Figure 1 Schematic partial cross-sectional view of a heater within a processing chamber.

[0016] To facilitate understanding, identical reference numerals have been used, where possible, to identify identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0017] The present disclosure relates to a heating apparatus for heating a preheat ring within a semiconductor processing chamber. The heating apparatus and preheat ring described herein are particularly directed to use within a deposition chamber, such as an epitaxial deposition chamber. The heater is configured to provide additional temperature control to the preheat ring within the deposition chamber and thereby enable increased gas / precursor activation toward the leading edge of the substrate, wherein the leading edge is adjacent to gas injection in the processing volume.

[0018] A sensor (such as a pyrometer or other temperature sensor) may be mounted on or within one of the preheat ring or the heater itself to measure the temperature of the preheat ring or heater. Measuring the temperature of the preheat ring or heater enables temperature control of the preheat ring to be monitored in real time, and enables adjustment of heater power to adjust the epitaxial growth rate on the substrate. Monitoring the temperature of the preheat ring further enables more repeatable processing results, as the power applied to one or more heaters within the preheat ring can be adjusted.

[0019] It has been found that the precursor and the process gas react with the substrate surface to form a film above the determined temperature, and the reaction rate increases with the increase in the temperature of the precursor or the process gas. The precursor and the process gas are often heated as the precursor and / or the process gas pass through the substrate. Thus, a substrate at a higher temperature often produces a higher growth rate and thus a higher substrate throughput. However, the material composition and the structure formed on the substrate sometimes limit the maximum temperature applied to the substrate before causing damage or warping to the substrate. The temperature of the substrate is a major factor in processing characteristics, such as precursor selection, throughput, growth rate, and growth uniformity. Using a preheat ring helps to increase the temperature of the precursor / process gas before the precursor / process gas flows over the substrate. The preheat ring is further formed of a material with less temperature restrictions, and can be heated to a higher temperature than the substrate or substrate support. Preheating the preheat ring to a higher temperature increases the temperature of the precursor / process gas before the precursor / process gas passes through the substrate and thus increases its reaction rate.

[0020] Furthermore, the inventors have discovered that without actively heating the preheat ring, the temperature of the preheat ring is often about 50°C to about 100°C less than the temperature of the substrate or substrate support on which the substrate is positioned. It has also been discovered that it often takes longer to stabilize the temperature of the preheat ring than to stabilize the temperature of the substrate support. The use of one or more heaters within or directly adjacent to the preheat ring enables improved control of the temperature of the preheat ring, enabling the temperature of the preheat ring to be controlled independently of the temperature of the substrate or substrate support and other components within the processing chamber. The temperature can further be stabilized quickly and with greater repeatability to enable repeatable thermal chemical vapor deposition (CVD) processes.

[0021] Figure 1 1 is a schematic cross-sectional side view of a processing chamber 100, such as a deposition chamber, such as an epitaxial deposition chamber. The processing chamber 100 is used to grow epitaxial films on a substrate, such as substrate 102. The processing chamber 100 generates a cross-flow of a precursor across a top surface 150 of the substrate 102.

[0022] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form a chamber body. A substrate support 106, an upper transmission window 108, a lower transmission window 110, a plurality of upper lamps 141, and a plurality of lower lamps 143 are disposed in the chamber body. As shown in the figure, the controller 120 communicates with the processing chamber 100 and is used to control the processing process, such as described herein. The substrate support 106 is disposed between the upper transmission window 108 and the lower transmission window 110. A plurality of upper lamps 141 are disposed between the upper transmission window 108 and the cover 154. The cover 154 includes a plurality of sensors 153 disposed therein for measuring the temperature in the processing chamber 100. The plurality of lower lamps 143 are disposed between the lower transmission window 110 and the bottom plate 152. The plurality of lower lamps 143 form a lower lamp assembly 145.

[0023] The processing volume 136 is formed between the upper transmission window 108 and the lower transmission window 110. The upper transmission window 108 may have a dome shape and may be referred to as an upper dome. The upper transmission window 108 has an upper dome portion (sometimes referred to as a central window portion in embodiments where the upper dome portion is not dome-shaped), and a support ring. The support ring is coupled to the outer edge of the upper dome portion and is disposed between the upper body 156 and the flow module 112. The lower transmission window 110 may also be dome-shaped, such that the lower transmission window 110 has a lower dome portion (sometimes referred to as a central window portion in embodiments where the lower dome portion is not dome-shaped), wherein a central opening is provided in the center of the lower dome portion for the shaft 118 of the substrate support 106 to be disposed therethrough. The lower dome portion of the lower transmission window 110 is connected to the support ring at the outer edge of the lower dome portion. The support ring is disposed between the lower body 148 and the flow module 112.

[0024] The processing volume 136 has a substrate support 106 disposed therein. The substrate support 106 includes a top surface on which the substrate 102 is disposed. The substrate support 106 is attached to a shaft 118. The shaft is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment of the shaft 118 and / or the substrate support 106 within the processing volume 136. The motion assembly 121 includes a rotary actuator 122 that rotates the shaft 118 and / or the substrate support 106 about a longitudinal axis A of the processing chamber 100. The motion assembly 121 further includes a vertical actuator 124 to raise and lower the substrate support 106 in the z-direction. The motion assembly includes a tilt adjustment device 126 for adjusting the planar orientation of the substrate support 106, and a lateral adjustment device 128 for adjusting the position of the shaft 118 and the substrate support 106 side by side within the processing volume 136.

[0025] The substrate support 106 may include lift pin holes 107 disposed therein. The lift pin holes 107 are sized to receive lift pins 132 for lifting the substrate 102 from the substrate support 106 before or after performing a deposition process. The lift pins 132 may rest on lift pin stops 134 when the substrate support 106 is lowered from the processing position to the transfer position.

[0026] The flow module 112 includes a plurality of process gas inlets 114, a plurality of purge gas inlets 164, and one or more exhaust gas outlets 116. The plurality of process gas inlets 114 and the plurality of purge gas inlets 164 are disposed on the side of the flow module 112 opposite to the one or more exhaust gas outlets 116. One or more flow guides 146 are disposed below the plurality of process gas inlets 114 and the one or more exhaust gas outlets 116. The flow guides 146 are disposed above the purge gas inlets 164. A liner 163 is disposed on the inner surface of the flow module 112 and protects the flow module 112 from the reactive gas used during the deposition process. The process gas inlets 114 and the purge gas inlets 164 are positioned to flow the gas in parallel with the top surface 150 of the substrate 102 disposed in the processing volume 136. The process gas inlet 114 is fluidly connected to the process gas source 151. The purge gas inlet 164 is fluidly connected to the purge gas source 162. The one or more exhaust gas outlets 116 are fluidly connected to the exhaust pump 157. Each of the process gas source 151 and the purge gas source 162 may be configured to supply one or more precursors or process gases into the processing volume 136 .

[0027] One or more heaters 168 are disposed adjacent to a preheat ring 166 within the processing chamber 100. The preheat ring 166 is configured as a ring disposed around the outer edge of the substrate 102 such that the preheat ring 166 can overlap the outermost portion of the substrate support 106 and rest on the substrate support 106 around the substrate 102. The preheat ring 166 can be formed of one or more parts. The preheat ring 166 has a top surface parallel to the direction of gas flow across the substrate 102 and the top surface 150 of the substrate support 106.

[0028] One or more heaters 168 are disposed below the preheating ring 166 such that the one or more heaters 168 are in contact with the preheating ring 166 and are formed through the walls of the flow module 112 and the gasket 163. The one or more heaters 168 are disposed between the preheating ring 166 and the lower transmission window 110. The one or more preheating rings 168 may be disposed within a heating block, such as Figure 2A The heater block 250 extends below a portion of the preheat ring 166. One or more preheat rings 166 may rest on top of the heater block 250. One or more heaters 168 extend inwardly from the flow module 112 and the liner 163 into the processing volume 136.

[0029] Figure 2A 2A-2A is a schematic cross-sectional plan view of a processing chamber through a first plane 2A-2A. The first plane 2A-2A passes through the heater 168 and the substrate support 106, but below the preheat ring 166. Figure 2AAs shown, the heater 168 is disposed through the injection assembly 206 and the opening in the flow module 112, such that the heater insert 218 is disposed through the injection assembly 206 and the flow module 112. The injection assembly 206 is a horizontal gas flow injector, such that the gas is configured to be injected above the top surface 150 of the substrate 102. A plurality of process gas inlets 114 are disposed through the injection assembly 206 and are configured to provide a gas flow distributed horizontally above the substrate support 106. One or more temperature sensors 212, 214 are also disposed through the injection assembly 206 and are configured to measure the temperature of the preheat ring 166 and / or the heating block 250 through which the heater 168 extends.

[0030] The injection assembly 206 is disposed on a first side of the flow module 112 and may be formed continuously or separable from the flow module 112. An exhaust assembly 208 including an exhaust gas outlet 116 disposed therethrough spans the injection assembly 206 on an opposite side of the flow module 112. A substrate transfer opening 210 is further disposed through the wall of the flow module 112. The substrate transfer opening 210 is sized to allow a substrate to pass therethrough. The substrate transfer opening 210 is between the injection assembly 206 and the exhaust assembly 208.

[0031] The process gas inlet 114 includes an angled portion 216 disposed through the liner 163 and / or the injection assembly 206. Figure 2A In some embodiments, the angled portion 216 is a vertical portion and extends orthogonally compared to the top surface 150 of the substrate 102. In some embodiments, the process gas inlet 114 can be heated using one or more heating elements disposed within the flow module 112. However, the temperature of the process gas flowing through the process gas inlet 114 is limited to reduce unintentional deposition and film formation within the process gas inlet 114 itself. Thus, the use of the preheat ring 166 enables the temperature of the gas and / or precursor to be increased between exiting the process gas inlet 114 and flowing over the substrate 102 and the susceptor 106.

[0032] The heater insert 218 includes a heater housing 222 and a heater base 224. The heater housing 222 is coupled to the heater base 224. The heater base 224 is coupled to the outer surface of the injection assembly 206 and the flow module 112. The heater base 224 is used to fix the heater insert 218 to the outside of the injection assembly 206 and / or the flow module 112 and to hold the heater insert 218 in place. The heater base 224 extends outwardly from the outer surface of the heater insert 218 so that the heater base 224 forms a flange around the distal end of the heater housing 222.

[0033] The heating element 226 is disposed at a distal end of the heater housing 222 opposite the heater base 224. The heating element 226 is disposed within a portion of the heater housing 222 in which the heater housing 222 is transparent, such as optically transparent. The heating element 226 is configured to heat one or both of the heater block 250 and the preheat ring 166. The heating element 226 is electrically coupled to the power source and controller 120. The power source may be an AC or DC power source.

[0034] The heating element 226 is disposed within the heating block 250. The heating zone 250 may be a partial ring, such that the heating block 250 has an arc shape, and is disposed below a portion of the preheat ring 166 and the gas flow from the injection assembly 206 to the substrate support 106. The heating block 250 may be disposed between two heating elements 226, such that heat from the two heating elements 226 is dispersed along the heating block 250 to enable uniform heating along the length of the heating block 250. The heating block 250 may be a silicon carbide material. The material of the heating block 250 has a thermal conductivity greater than about 100 W / (m·K), such as greater than about 110 W / (m·K), such as greater than about 120 W / (m·K), such as greater than about 150 W / (m·K). The heating block 250 may be connected to the underside of the preheat ring 166, such that the preheat ring 166 rests on the heating block 250.

[0035] exist Figure 2A In an embodiment of the present invention, there are two heaters 168. Each of the two heaters 168 is disposed on opposite sides of the injection assembly 206, such that the first heater 168 is disposed on a first distal end of the injection assembly 206 and the second heater 168 is disposed on a second distal end of the injection assembly 206. The first heater 168 and the second heater 168 are further disposed on opposite ends of the heating block 250. In some embodiments, an additional heater 168 may be disposed between the first heater 168 and the second heater 168.

[0036] Temperature sensors 212, 214 are also disposed through the injection assembly 206 and the flow module 112. The temperature sensors 212, 214 extend through the gasket 163 and into one of the heating block 250 and / or preheat ring 166. The first temperature sensor 212 is disposed through the injection assembly 206 and the central portion of the heating block 250. The second temperature sensor 214 is disposed adjacent to one of the heaters 168 such that the second temperature sensor 214 measures the temperature near the distal end of the heating block 250 / preheat ring 166, while the first temperature sensor 212 measures the temperature near the center of the heating block 250 / preheat ring 166. The temperature sensors 212, 214 may be one or a combination of pyrometers or thermocouples.

[0037] Figure 2B 2B-2B is a schematic cross-sectional plan view of the processing chamber 100 through the second plane 2B-2B. The second plane 2B-2B passes through the flow module 112, but is disposed above the preheat ring 166 and the substrate support 106 and the substrate 102. Figure 2B 1 , the preheat ring 166 is separated into a first preheat ring portion 205 and a second preheat ring portion 207. The first preheat ring portion 205 is disposed adjacent to the heater 168 and the heating block 250 such that the heating block 250 contacts the bottom of the first preheat ring portion 205. The second preheat ring portion 207 is disposed adjacent to the first preheat ring portion 205 and completes the preheat ring 166. The second preheat ring portion 207 is disposed on top of one or more flow guides 146 extending inwardly from the liner 163. The second preheat ring portion 207 forms the main portion of the ring and extends around the trailing edge of the substrate support adjacent to the exhaust gas outlet 116. The first preheat ring portion 205 circumscribes a first portion of the circumference of the substrate support 106 and the substrate 102. The second preheat ring portion 207 circumscribes a second portion of the circumference of the substrate support 106 and the substrate 102.

[0038] The first preheat ring portion 205 and the second preheat ring portion 207 form two different arcs. Each of the first preheat ring portion 205 and the second preheat ring portion 207 further has a first end and a second end. The first preheat ring portion 205 has a first arc angle θ between the first distal end and the second distal end of less than about 180 degrees, such as less than about 160 degrees, such as less than about 150 degrees, such as less than about 145 degrees, such as less than about 120 degrees, such as less than about 100 degrees. The second preheat ring portion 207 has a second arc angle between the first distal end and the second distal end of greater than about 180 degrees, such as greater than about 200 degrees, such as greater than about 210 degrees, such as greater than about 220 degrees, such as greater than about 250 degrees, such as greater than about 260 degrees. Each of the arcs of the first preheat ring portion 205 and the second preheat ring portion 207 is centered on the central axis C of the substrate support 106.

[0039] The separation of the first preheating ring portion 205 and the second preheating ring portion 207 enables the first preheating ring portion 205 and the second preheating ring portion 207 to be formed of different materials. The separation of the first preheating ring portion 205 and the second preheating ring portion 207 further enables the temperature of the first preheating ring portion 205 to be better controlled by reducing the amount of heat distributed to the second preheating ring portion 207 because a thermal gap is created between the first preheating ring portion 205 and the second preheating ring portion 207. The thermal gap is formed by the separation of only the first preheating ring portion 205 and the second preheating ring portion 207, a gap / space between the first preheating ring portion 205 and the second preheating ring portion 207, or an insulator disposed between the first preheating ring portion 205 and the second preheating ring portion 207.

[0040] The gas inlet surface 202 is disposed adjacent to the first preheat ring portion 205 of the preheat ring 166 such that gas from the process gas inlet 114 is directed upward before being redirected by a portion of the liner 163. In some embodiments, the gas inlet surface 202 may face the substrate support 106 such that the gas inlet surface 202 is perpendicular to the top surface 150 of the substrate 102.

[0041] Figure 3 yes Figure 1 1 is a schematic partial cross-sectional view of a preheat ring assembly of a processing chamber 100. The preheat ring assembly includes a preheat ring 166 and one or more heaters 168. The preheat ring 166 is configured to contact the one or more heaters 168 and / or the heating block 250. The preheat ring 166 may further rest on top of the substrate support 106 when the substrate support 106 is in the processing position.

[0042] Figure 4A yes Figure 1 1. A schematic partial cross-sectional view of a heater 168 within a processing chamber 100 of FIG. 1. The heater 168 is disposed through both the flow module 112 and the liner 163. The heater 168 extends into the processing volume 136. Each of the heaters 168 further includes a heater housing 222, a heater insert body 402, a heater base 224, and a heating element 226. The heater housing 222 is at least partially disposed inside the heater insert body 402 such that the heater insert body 402 is disposed around a portion of the heater insert body 402 around the heating element 226.

[0043] The heater insert body 402 is disposed within the processing volume 136 such that the heater insert body 402 does not extend through at least one of the liner 163 or the flow module 112. The heater insert body 402 can be a portion of the heating block 250 such that the heater insert body 402 is a portion of the heating block 250 that surrounds one of the heater housings 222. The heater insert body 402 may alternatively be a cylindrical body that surrounds the end of the heater housing 222 in which the heating element 226 is disposed. The heater insert body 402 is formed of a highly thermally conductive material, such as a silicon carbide material. The silicon carbide material has reduced interaction with the gas within the processing volume while still having high thermal conductivity. The material of the heater insert body 402 has a thermal conductivity greater than about 100 W / (m·K), such as greater than about 110 W / (m·K), such as greater than about 120 W / (m·K), such as greater than about 150 W / (m·K).

[0044] The heater insert body 402 can be thermally isolated from the liner 163 such that one or more separators 411 are disposed between the heater insert body 402 and the liner 163. The one or more separators 411 form a gap 408, which can be used as a thermal gap 408. The one or more separators 411 are thermal isolators such that the one or more separators 411 are ceramic or dielectric materials.

[0045] A sealing groove 420 is disposed around a portion of the heater housing 222 within the liner 163. The sealing groove 420 is a groove extending outwardly from an opening through which the heater housing 222 extends within the liner 163. The sealing groove 420 is configured to receive a sealing ring such that the sealing groove 420 enables a sealing ring, such as an O-ring to be disposed therein, to reduce or prevent gas from the processing volume 136 from extending through the liner 163 and through the flow module 112 toward the outer volume.

[0046] The reflector 410 is disposed within the heater housing 222 and forms a front heater volume 435 and a rear heater volume 434. The front heater volume 435 includes the heating element 226 disposed therein. The front heater volume 435 is isolated from the rear heater volume 434 by the reflector 410, such that the reflector 410 separates the front heater volume 435 from the rear heater volume 434. The rear heater volume 434 is either filled with an insulator, an inert gas, air, or maintained under a vacuum to reduce heat transfer through the heater 168.

[0047] The reflector 410 may be a thermal insulator, such as the reflector 410 having a thermal conductivity of less than about 50 W / (m·K), such as less than about 10 W / (m·K), such as less than about 10 W / (m·K), such as less than about 5 W / (m·K), such as less than about 1 W / (m·K), such as less than about 0.5 W / (m·K), such as less than about 0.1 W / (m·K). The reflector 410 is further configured to reflect more than 90% of the radiant energy in the infrared wavelength range, such as wavelengths of about 700 nm to about 1 mm. The reflector 410 may be a ceramic or dielectric material. In some embodiments, the reflector 410 is coated with a reflective coating to reflect radiation emitted by one or more lamps within the processing chamber 100 or emitted from the heating element 226. The coating may be a metal coating, such as an aluminum coating or a silver coating. In some embodiments, the reflector 410 is a reflective quartz material.

[0048] The heater housing 222 includes a transmissive portion 414 and an opaque portion 416. The transmissive portion 414 is disposed around the heating element and within the heater insert body 402. The transmissive portion 414 is optically transparent such that greater than about 90% of radiant energy within an infrared wavelength range (such as wavelengths of about 700 nm to about 1 mm) passes through the transmissive portion 414. In some embodiments, greater than about 95% of radiant energy within the infrared wavelength range passes through the transmissive portion 414, such as greater than about 98% of radiant energy. The transmissive portion 414 is formed of an optically transparent material, such as a transparent quartz material or glass.

[0049] The opaque portion 416 is a second portion of the heater housing 222 that is not disposed around the heating element 226. The opaque portion 416 is disposed on the side of the reflector 410 opposite the transmissive portion 414. The opaque portion 416 extends through the flow module 112. The opaque portion 416 has a lower light transparency than the transmissive portion 414, such that less than about 50% of the radiant energy within the infrared wavelength range (such as a wavelength of about 700 nm to about 1 mm) passes through the transmissive portion 414. In some embodiments, less than about 30% of the radiant energy within the infrared wavelength range passes through the transmissive portion, such as less than about 20%, such as less than about 10%, such as less than about 5%, such as less than about 2%.

[0050] Boundary 418 is disposed between opaque portion 416 and transmissive portion 414. Boundary 418 is disposed around reflector 410 such that reflector heater housing 222 transitions from opaque portion 416 to transmissive portion 414 at reflector 410. Opaque portion 416 and transmissive portion 414 are joined, fused, welded, or brazed at boundary 418. The transition from transmissive portion 414 to opaque portion 416 increases the proportion of radiant energy emitted by heating element 226 that is directed through transmissive portion 414 toward first preheat ring portion 205.

[0051] Forming the entire heater housing 222 from quartz material enables better bonding of the transmissive portion 414 and the opaque portion 416, making the heater housing 222 a single piece. Using a single piece for the heater housing 222 prevents process gas leakage into one of the front heater volume 435 or the rear heater volume 434 and simplifies installation of the heater 168.

[0052] Figure 4AThe heating element 226 is a radiant heat source, such as a lamp 404. The bulb of the lamp 404 is arranged inside the front heater volume 435. The lamp 404 may be similar to one of the upper lamp 141 or the lower lamp 143. The lamp 404 may alternatively be a smaller lamp, so that the bulb of the lamp 404 has a diameter less than about 25 mm, such as less than about 20 mm. The lamp 404 has a power output of about 500W to about 3000W, such as about 500W to about 1000W, or such as about 1000W to about 1500W. Electricity is supplied to the lamp 404 through one or more wires 412. One or more wires 412 are connected to the power supply and / or controller 120. One or more wires 412 are arranged through the reflector 410 and are connected to the lamp 404. The base of the lamp 404 is also connected to the reflector 410, so that the bulb of the lamp 404 is directed away from the reflector 410 toward the processing volume 136.

[0053] The heater base 224 includes a heater housing base 428, a compression cap 432, and a compression gasket 430 disposed between the heater housing base 428 and the compression cap 432. The heater base 428 is formed of a material similar to the opaque portion 416 of the heater housing 222. In some embodiments, the heater base 428 is also bonded, fused, welded, or brazed to the opaque portion 416. In other embodiments, the heater base 428 is a single, uniform, and single-piece opaque portion 416. The outer wall 431 of the opaque portion 416 intersects the contact surface 427 of the heater base 428, such that the outer wall 431 of the opaque portion 416 is perpendicular and orthogonal to the contact surface 427 of the heater base 428. The contact surface 427 is flush with and contacts the outer surface of the flow module 112.

[0054] One or more grooves 425 are provided in the contact surface 427. The one or more grooves 425 are annular grooves provided around the opaque portion 416. The one or more grooves are sized to receive the sealing heat shield 422 and the sealing ring 426. The sealing heat shield 422 is an insulator that reduces the heat transfer from the outer wall 431 of the opaque portion 416 to the sealing ring 426 when the sealing ring 426 fails at high temperatures. The sealing heat shield 422 can be a ceramic or dielectric material and can be in the same or separate grooves as the sealing ring 426. The sealing ring 426 is radially disposed outwardly from the sealing heat shield 422 relative to the outer wall 431 of the opaque portion 416.

[0055] The compression cap 432 is disposed on the outer surface of the heater base 224 relative to the heater housing 222. The compression cap 432 may be a metal material, such as aluminum or steel. The compression cap 432 may have pressure applied thereto and may be coupled to the flow module 112 such that a portion of the compression cap 432 contacts the flow module 112 and one or more screws or bolts (not shown) are used to tighten the compression cap 432 against the outer surface of the flow module 112. The compression gasket 430 is used to distribute the pressure from the compression cap 432 to the heater base 428. The compression gasket 430 is a metal or polymer material. In some embodiments, the compression gasket 430 is the same material as the compression cap 432.

[0056] Figure 4B is Figure 1 Schematic partial cross-sectional view of another heater 168 within the processing chamber. Figure 4B The heater 168 and Figure 4A The heater 168 is similar, but Figure 4B The heater 168 has a resistive heating element 450 as the heating element 226. The resistive heating element 450 is disposed within the front heater volume 435. The resistive heating element 450 is disposed within the front heater volume 435. Figure 4A The lamp 404 utilized in the embodiment is more compact than that.

[0057] The resistive heating element 450 emits power at a rate of about 1000 W to about 3000 W, or such as about 500 W to about 1000 W, or such as about 1000 W to about 1500 W. The resistive heating element 450 has a resistance greater than about 2 ohms (Ω), such as about 2Ω to about 100Ω.

[0058] As the resistive heating element 450 contacts and enters the reflector 410, the resistivity of the heating element 450 decreases. The low resistance portion of the heating element 450 after passing the reflector 410 is the heater power connector 452. The heater power connector 452 passes through the rear heater volume 434. The heater power connector 452 is electrically coupled to the power source and / or controller 120.

[0059] Figure 4C is Figure 1 Schematic partial cross-sectional view of a heater 168 within a processing chamber 100. Figure 4C The heater 168 is similar to Figure 4A The heater 168, but Figure 4C The heater 168 also serves as the first preheating ring portion 205 of the preheating ring 166. Figure 4C In the embodiment of the present invention, the preheat ring 166 may be omitted or adapted to utilize the heater 168 and the corresponding heater block 250 to replace the first preheat ring portion 205 .

[0060] The heater and preheat ring assembly described herein enables more accurate, rapid, and repeatable heating of the gas or precursor as it enters the processing volume and before the gas or precursor passes over the substrate or substrate support. By heating the gas or precursor to a higher temperature before the gas or precursor passes over the substrate, deposition on the substrate is generally increased across the width of the substrate, and the increased deposition is particularly high at the leading edge of the substrate.

[0061] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the following claims.

Claims

1. A processing chamber configured for use during semiconductor processing, comprising: a chamber body comprising a plurality of gas inlets on a first side of the chamber body and one or more exhaust outlets on a second side of the chamber body opposite the first side; a substrate support disposed within a processing volume of the chamber body; as well as a preheat ring assembly disposed between the plurality of gas inlets and the substrate support and comprising: Preheating ring; one or more heaters disposed adjacent to the preheat ring; and One or more temperature sensors are disposed adjacent to the preheat ring.

2. The processing chamber of claim 1 , wherein the preheat ring circumscribes the substrate support and further comprises: a first preheat ring portion forming a first partial ring adjacent the one or more heaters and the one or more temperature sensors and circumscribing a first portion of the substrate support; as well as A second preheat ring portion forms a second partial ring and circumscribes a second portion of the substrate support different from the first portion.

3. The processing chamber of claim 1, wherein the one or more heaters are coupled to an underside of the preheat ring, and the preheat ring rests on top of the one or more heaters.

4. The processing chamber of claim 3, wherein the heater further comprises: a heater insert body; a heater housing disposed at least partially within the heater insert body; a reflector disposed within the heater housing and forming a front heater volume; and A heating element is disposed within the front heater volume of the heater housing.

5. The processing chamber of claim 4, wherein the heating element is one of a lamp or a resistive heating element.

6. The processing chamber of claim 4, wherein a heater base is coupled to an outer surface of the chamber body and to the heater housing.

7. The processing chamber of claim 1, further comprising: a first plurality of lights disposed above the first window; as well as A second plurality of lights are disposed beneath the second window.

8. A preheat ring assembly configured for use in a semiconductor processing chamber, comprising: A preheating ring, comprising a first preheating ring section and a second preheating ring section; one or more temperature sensors coupled to the first preheat ring segment; as well as two or more heaters coupled to the first preheat ring section and configured to heat the first preheat ring section, and comprising: Heater housing; a reflector disposed within the heater housing and forming a front heater volume; A heating element is disposed within the front heater volume.

9. The preheat ring assembly of claim 8, wherein the first preheat ring segment is formed of a silicon carbide material.

10. The preheat ring assembly of claim 8, wherein the two or more heaters are at least partially disposed within a heater insert body, and the first preheat ring section is disposed on top of the heater insert body.

11. The preheat ring assembly of claim 10, wherein the heater insert body is formed of a silicon carbide material.

12. The preheat ring assembly of claim 8, wherein the heater housing is formed of a quartz material.

13. The preheat ring assembly of claim 12, wherein the heater housing further comprises: a transmission portion disposed around the heating element; as well as The opaque portion is coupled to the distal end of the transmissive portion.

14. The preheat ring assembly of claim 8, wherein one or more temperature sensors are disposed within the first preheat ring section.

15. A heater insert configured to heat a preheat ring within a semiconductor processing chamber, comprising: Heater housing, comprising: Transmission part; an opaque portion coupled to a distal end of the transmissive portion; and a heater substrate coupled to a distal end of the transmissive portion opposite the transmissive portion such that the opaque portion intersects a contact surface of the heater substrate and the contact surface has one or more grooves disposed therein; a reflector disposed within the heater housing and forming a front heater volume and a rear heater volume; and A heating element is disposed within the front heater volume and within the transmissive portion of the heater housing.

16. The heater insert of claim 15, wherein the heating element is one of a lamp or a resistive heating element.

17. The heater insert of claim 16, wherein the heating element has a power output of about 500W to about 3000W.

18. The heater insert of claim 15, wherein the transmissive portion is transmissive quartz having a transparency greater than about 90% and the opaque portion is opaque quartz having a transparency less than about 50%.

19. The heater insert of claim 15, wherein the one or more grooves are configured to retain a heat shield ring and a sealing ring.

20. The heater insert of claim 15, wherein a compression gasket and a compression cover are coupled to the heater base such that the compression gasket is disposed between the compression cover and the heater base.

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