Preparation method of one-dimensional silver telluride nanowire
By using high coverage tellurium powder and molecular beam epitaxial technology on silver substrates, the problem of difficulty in preparing one-dimensional silver tellurium compound nanowires in the prior art is solved, and the preparation of uniform one-dimensional silver tellurium nanowires with widths less than 1 nanometer and lengths greater than 50 nanometers is achieved, which has improved its application potential in electronic devices.
Patent Information
- Application Number
- CN202411772595.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-04
- Publication Date
- 2025-03-04
AI Technical Summary
The prior art is difficult to effectively prepare one-dimensional silver tellurium compound nanowires, resulting in limited application of their electronic devices.
One-dimensional silver telluride nanowires were gradually prepared by using high-coverage tellurium powder on a silver substrate and applying stress, combined with molecular beam epitaxial technology to accurately control the deposition amount and temperature of tellurium powder.
One-dimensional silver telluride nanowires were successfully prepared with a width of less than 1 nanometer and a length of more than 50 nanometers. They had uniform orientation and excellent electrical properties, which promoted the application of silver telluride compounds in electronic devices.
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Figure CN119553359A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to a method for preparing one-dimensional silver telluride nanowires, and belongs to the technical field of surface synthesis. Background Art
[0002] In recent years, one-dimensional nanowires have attracted widespread attention due to their special geometric shape. They can be regarded as a nanostructure that is restricted in two dimensions and can be extended in another dimension. This structural feature reduces the scattering and restriction of electrons, photons, etc. when they are transmitted in nanowires, and has great application prospects in electronic devices such as transistors and sensors. However, most reported one-dimensional nanowires are prepared by electron beam irradiation or chemical dissolution. This complex preparation environment hinders the application of their inherent electronic properties. Therefore, it is of great significance to prepare one-dimensional nanowires by a top-down method.
[0003] Although silver telluride compounds have excellent properties such as good electrical properties, significant thermoelectric effect, outstanding optical properties, and high stability, they usually exist in the form of a two-dimensional honeycomb plane. Due to the limitations of two-dimensional materials such as difficulty in integrating them into devices, complex performance regulation, poor sensor selectivity, and slow response, their application in devices has been greatly hindered. Therefore, exploring more effective methods for preparing one-dimensional silver telluride compound nanowires is of great significance for promoting the research and application of silver telluride compounds. Summary of the invention
[0004] In view of the difficulties in preparing one-dimensional silver telluride compound nanowires, the present invention proposes a method for preparing one-dimensional silver telluride nanowires. Specifically, the present invention uses a strategy of generating stress on the surface of a silver substrate by using a high coverage tellurium powder, accurately controls the deposition amount of tellurium powder on the surface of the silver substrate by molecular beam epitaxy technology, heats the sample to a growth temperature and then keeps the temperature for a certain period, and then cools the sample to room temperature to obtain a one-dimensional silver telluride nanowire. The present invention is achieved by the following technical solutions.
[0005] A method for preparing one-dimensional silver telluride nanowires, comprising the steps of:
[0006] Step 1, preparing a silver single crystal substrate;
[0007] Step 2: Using molecular beam epitaxy technology, tellurium powder is precisely deposited on a silver single crystal substrate maintained at room temperature, the temperature is raised to the growth temperature, the temperature is kept for a certain period of time, and the sample is cooled to room temperature to obtain one-dimensional silver telluride nanowires.
[0008] The preparation process of the silver single crystal substrate in step 1 is specifically as follows:
[0009] Step 1.1, in an ultra-high vacuum chamber, subjecting a silver substrate to argon ion sputtering to obtain a silver base;
[0010] Step 1.2: Heat the silver substrate obtained in step 1.1 to 400°C-500°C and keep it warm for 10-30 minutes to obtain a silver single crystal substrate.
[0011] In the step 2, the tellurium powder is evaporated at a temperature of 190° C. to 195° C. by molecular beam epitaxy technology.
[0012] The deposition time of the tellurium powder in step 2 is 100 minutes to 120 minutes.
[0013] The preparation method according to claim 1 is characterized in that the growth temperature in step 2 is 300°C-400°C.
[0014] The insulation time in step 2 is 60 minutes to 120 minutes.
[0015] The one-dimensional silver telluride nanowire has a width less than 1 nanometer and a length greater than 50 nanometers.
[0016] The beneficial effects of the present invention are:
[0017] The invention can prepare one-dimensional silver telluride nanowires. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] The embodiments of the present invention are described in detail below with reference to the accompanying drawings, wherein:
[0019] Figure 1 shows a scanning tunneling microscope image of a one-dimensional silver telluride nanowire according to an embodiment of the present invention;
[0020] Figure 2 The scanning tunneling microscope atomic resolution image, cellular structure and period of one-dimensional silver telluride nanowires according to an embodiment of the present invention are shown;
[0021] Figure 3 Shown are a scanning tunneling microscope image of a one-dimensional silver telluride nanowire according to an embodiment of the present invention, a scanning tunneling microscope image of a one-dimensional silver telluride nanowire simulated by a computational method, and the corresponding optimized atomic configuration of the one-dimensional silver telluride nanowire. DETAILED DESCRIPTION
[0022] The present invention will be further described in detail below in conjunction with specific embodiments. The given examples are only for illustrating the present invention, but not for limiting the scope of the present invention.
[0023] Test instruments and equipment:
[0024] Low-temperature scanning tunneling microscope: purchased from Omicron, Germany.
[0025] Thermal resistance K-cell molecular evaporation source: purchased from Omicron, Germany.
[0026] Argon ion gun: purchased from Omicron, Germany.
[0027] raw material:
[0028] Tellurium powder: purchased from Sigma-Aldrich, purity 99.9%.
[0029] Silver single crystal: purchased from MaTecK, purity 99.999%.
[0030] Example 1
[0031] The method for preparing one-dimensional silver telluride nanowires comprises the following steps:
[0032] Step 1: preparing a silver single crystal substrate; the preparation process of the silver single crystal substrate is specifically as follows:
[0033] Step 1.1, in an ultra-high vacuum chamber, subjecting a silver substrate to argon ion sputtering treatment to obtain a clean silver substrate;
[0034] Step 1.2: Heat the silver substrate obtained in step 1.1 to 400°C and keep it warm for 10 minutes to obtain a clean and flat silver single crystal substrate.
[0035] Step 2: After the silver single crystal substrate is prepared, tellurium powder is evaporated and deposited onto the surface of the silver single crystal substrate at 20°C using a thermal resistance K-cell molecular evaporation source at an evaporation temperature of 190°C in an ultra-high vacuum environment. The deposition time of the tellurium powder is 100 minutes. The sample is then heated to 300°C and maintained for 60 minutes to obtain one-dimensional silver telluride nanowires.
[0036] In step 2 of this embodiment, the deposition time is precisely controlled to be 100 minutes to obtain a high coverage of tellurium powder deposited on the surface of the silver single crystal.
[0037] In step 2 of this embodiment, the sample is heated to 300° C. and maintained at this temperature for 60 minutes to allow the tellurium powder to fully diffuse on the surface of the silver single crystal and react to form uniform one-dimensional silver telluride nanowires.
[0038] Example 2
[0039] The method for preparing one-dimensional silver telluride nanowires comprises the following steps:
[0040] Step 1: preparing a silver single crystal substrate; the preparation process of the silver single crystal substrate is specifically as follows:
[0041] Step 1.1, in an ultra-high vacuum chamber, subjecting a silver substrate to argon ion sputtering treatment to obtain a clean silver substrate;
[0042] Step 1.2: Heat the silver substrate obtained in step 1.1 to 450° C. and keep it warm for 20 minutes to obtain a clean and flat silver single crystal substrate.
[0043] Step 2: After the silver single crystal substrate is prepared, tellurium powder is evaporated and deposited onto the surface of the silver single crystal substrate at 20°C using a thermal resistance K-cell molecular evaporation source at an evaporation temperature of 193°C in an ultra-high vacuum environment. The deposition time of the tellurium powder is 110 minutes. The sample is then heated to 350°C and maintained for 90 minutes to obtain one-dimensional silver telluride nanowires.
[0044] In step 2 of this embodiment, the deposition time is precisely controlled to be 110 minutes to obtain a high coverage of tellurium powder deposited on the surface of the silver single crystal.
[0045] In step 2 of this embodiment, the sample is heated to 350° C. and maintained at this temperature for 90 minutes to allow the tellurium powder to fully diffuse on the surface of the silver single crystal and react to form uniform one-dimensional silver telluride nanowires.
[0046] Example 3
[0047] The method for preparing one-dimensional silver telluride nanowires comprises the following steps:
[0048] Step 1: preparing a silver single crystal substrate; the preparation process of the silver single crystal substrate is specifically as follows:
[0049] Step 1.1, in an ultra-high vacuum chamber, subjecting a silver substrate to argon ion sputtering treatment to obtain a clean silver substrate;
[0050] Step 1.2: Heat the silver substrate obtained in step 1.1 to 500° C. and keep it warm for 30 minutes to obtain a clean and flat silver single crystal substrate.
[0051] Step 2: After the silver single crystal substrate is prepared, tellurium powder is evaporated and deposited onto the surface of the silver single crystal substrate at 20°C using a thermal resistance K-cell molecular evaporation source at an evaporation temperature of 195°C in an ultra-high vacuum environment. The deposition time of the tellurium powder is 120 minutes. The sample is then heated to 400°C and maintained for 120 minutes to obtain one-dimensional silver telluride nanowires.
[0052] In step 2 of this embodiment, the deposition time is precisely controlled to be 120 minutes to obtain a high coverage of tellurium powder deposited on the surface of the silver single crystal.
[0053] In step 2 of this embodiment, the sample is heated to 400° C. and maintained at this temperature for 120 minutes to allow the tellurium powder to fully diffuse on the surface of the silver single crystal and react to form uniform one-dimensional silver telluride nanowires.
[0054] The one-dimensional silver telluride nanowires prepared in this example are Figure 1As shown, their width is less than 1 nanometer, their length is greater than 50 nanometers, and all nanowires have a uniform orientation.
[0055] The scanning tunneling microscope atomic resolution image and cell size of the one-dimensional silver telluride nanowire prepared in this example are as follows: Figure 2 As shown, the cell size is 0.48nm, which is a periodic structure.
[0056] The structure of the one-dimensional silver telluride nanowires prepared in this example is as follows: Figure 3 As shown in the figure. The height of the computational simulation image and the experimental image is the same, which confirms that its structure is a one-dimensional silver telluride nanowire formed by the staggered arrangement of silver atoms and tellurium atoms. And one unit cell contains two silver atoms and tellurium atoms, confirming that the chemical ratio of silver and tellurium is 1:1.
[0057] Figure 1 The preparation method according to an embodiment of the present invention and its corresponding one-dimensional silver telluride nanowire prepared by the preparation method according to an embodiment of the present invention are shown, and its structure can be observed by a scanning tunneling microscope.
[0058] Figure 2 A scanning tunneling microscope atomic resolution image of a one-dimensional silver telluride nanowire structure is shown, along with its unit cell size and period.
[0059] Figure 3 The experimental and computationally simulated scanning tunneling microscope atomic resolution images of one-dimensional silver telluride nanowires prepared according to the preparation method of the embodiment of the present invention are shown. It can be directly and effectively proved that the one-dimensional silver telluride nanowires prepared according to the preparation method of the embodiment of the present invention are nanowire structures composed of silver atoms and tellurium atoms.
[0060] As described above, in the preparation method according to an embodiment of the present invention, under the condition of ensuring the same deposition temperature, the molecular beam epitaxy method is used to adjust the deposition time and other conditions to achieve the preparation of one-dimensional silver telluride nanowires.
Claims
1. A method for preparing one-dimensional silver telluride nanowires, characterized by the following steps include: Step 1, preparing a silver single crystal substrate; Step 2: Deposit tellurium powder onto a silver single crystal substrate at room temperature by molecular beam epitaxy in a precisely controlled manner, heat the substrate to a growth temperature, and keep the temperature for a certain period of time, then cool the sample to room temperature to obtain one-dimensional silver telluride nanowires.
2. The preparation method according to claim 1, characterized in that: The preparation process of the silver single crystal substrate in step 1 is specifically as follows: Step 1.1, in an ultra-high vacuum chamber, subjecting a silver substrate to argon ion sputtering to obtain a silver base; Step 1.2: Heat the silver substrate obtained in step 1.1 to 400° C. to 500° C. and keep the temperature for 10 to 30 minutes to obtain a silver single crystal substrate.
3. The preparation method according to claim 1, characterized in that: In the step 2, the tellurium powder is evaporated at a temperature of 190° C. to 195° C. by molecular beam epitaxy technology.
4. The preparation method according to claim 1, characterized in that: The deposition time of the tellurium powder in step 2 is 100 minutes to 120 minutes.
5. The preparation method according to claim 1, characterized in that: The growth temperature in step 2 is 300°C-400°C.
6. The preparation method according to claim 1, characterized in that: The insulation time in step 2 is 60 minutes to 120 minutes.
7. The preparation method according to claim 1, characterized in that: The one-dimensional silver telluride nanowire has a width less than 1 nanometer and a length greater than 50 nanometers.