Crystal defect analysis sample as well as preparation device, method and application thereof

Abstract

The invention provides a crystal defect analysis sample and a preparation device, method and application thereof. The preparation device comprises a base, a V-shaped groove is formed in the top surface of the base, a non-Newtonian fluid substance is arranged in the V-shaped groove, and the non-Newtonian fluid substance protrudes out of the surface of the base after the V-shaped groove is completely filled with the non-Newtonian fluid substance. According to the preparation device, the sample to be cut can be accurately fixed, so that the sample to be cut is cut in cooperation with linear cutting, a longitudinally-split crystal defect analysis sample is obtained, and crystal defect analysis is achieved. When the preparation device is used for preparing a crystal defect analysis sample, necking and fine grain parts in the crystal growth process can be analyzed, and the defects of the necking and fine grain parts can be researched.

Description

Technical Field

[0001] The present invention belongs to the technical field of crystal defect analysis, and relates to a device for preparing a crystal defect analysis sample, and in particular to a crystal defect analysis sample and a preparation device, method and application thereof. Background Art

[0002] With the development of the integrated circuit industry, higher requirements are placed on the purity, high uniformity, high integrity and large diameter of silicon single crystal materials. In actual production time, the analysis of silicon single crystal material defects is an important means to improve the quality of silicon single crystal materials. The analysis of silicon single crystal material defects often requires the silicon single crystal material to be sampled first to meet the conditions for testing and analysis. However, the preparation device and preparation method of silicon single crystal material defect analysis samples in the prior art are difficult to analyze the necking and fine grain parts during the crystal growth process.

[0003] CN101187065A discloses a method for identifying crystal defect areas of single crystal silicon using metal contamination and heat treatment. In this method, a sample in the shape of a silicon wafer or a single crystal silicon ingot slice is prepared. 14 to 5×10 16 The contamination concentration of the sample is 100 atoms / cm2, and at least one side of the sample is contaminated. The contaminated sample is heat-treated. The contaminated side or the opposite side of the heat-treated sample is observed to identify the crystal defect area. The crystal defect area can be accurately, easily and quickly analyzed without using another inspection device, regardless of the oxygen concentration in the single crystal silicon.

[0004] CN109360793A discloses a method for rapid detection of silicon crystal defects on a semiconductor wafer substrate, comprising: cutting a semiconductor wafer to prepare a test sample; immersing the test sample in a hydrofluoric acid solution to peel off all material layers on the substrate except polysilicon; using a mixed acid solution to etch and remove the polysilicon on the substrate; immersing the substrate in a "shuaike" solution to scribe the silicon crystal defects on the substrate; inspecting the silicon crystal defects on the substrate and taking optical microscope or scanning electron microscope photos.

[0005] The preparation devices for defect analysis samples of silicon single crystal materials disclosed in the prior art all have certain defects, and there is a problem that it is difficult to analyze the necking and fine crystal parts during the crystal growth process. Therefore, it is very important to develop and design a new type of crystal defect analysis sample and its preparation device, method and application. Summary of the invention

[0006] In view of the deficiencies in the prior art, the purpose of the present invention is to provide a crystal defect analysis sample and a preparation device, method and application thereof. The preparation device in the present invention can achieve precise fixation of the sample to be cut, thereby cooperating with wire cutting to achieve cutting of the sample to be cut, obtaining a longitudinally sectioned crystal defect analysis sample, and realizing analysis of crystal defects; using the preparation device to prepare the crystal defect analysis sample can analyze the necking and fine grain parts during the crystal growth process, and study the defects of the necking and fine grain parts.

[0007] To achieve this object, the present invention adopts the following technical solutions:

[0008] In a first aspect, the present invention provides a device for preparing samples for crystal defect analysis, the device comprising a base, a top surface of the base being provided with a V-shaped groove, a non-Newtonian fluid material being provided in the V-shaped groove, and the non-Newtonian fluid material protrudes from the surface of the base after completely filling the V-shaped groove.

[0009] The top surface of the base described in the present invention is provided with a V-shaped groove, and a non-Newtonian fluid material is provided in the V-shaped groove. The sample to be cut moves into the V-shaped groove under the action of pressure, and the non-Newtonian fluid material is squeezed out, thereby leaving an embedding space for the sample to be cut. After the sample to be cut is partially embedded in the V-shaped groove, the V-shaped groove clamps the sample to be cut, thereby realizing the position limitation of the sample to be cut; in addition, the sample to be cut partially embedded in the V-shaped groove is in full contact with the non-Newtonian fluid material that is not squeezed out in the V-shaped groove, and the bonding effect between the non-Newtonian fluid material and the sample to be cut further realizes the position limitation of the sample to be cut. Therefore, the preparation device described in the present invention can realize the precise fixation of the sample to be cut, thereby cooperating with the wire cutting to realize the cutting of the sample to be cut, obtaining a longitudinally cut crystal defect analysis sample, and realizing the analysis of crystal defects; using the preparation device to prepare the crystal defect analysis sample, it is possible to analyze the necking and fine crystal parts during the crystal growth process, and study the defects of the necking and fine crystal parts.

[0010] Preferably, the top surface of the base is a U-shaped surface, and the bottom center of the U-shaped surface is located on a bottom axis;

[0011] On the cross section of the base perpendicular to the bottom axis direction, the top of the base is a U-shaped curve, and the opening width of the U-shaped curve is 1 to 5 times larger than the maximum width of the sample to be cut along the horizontal direction, for example, it can be 1 times, 1.5 times, 2 times, 2.5 times, 3 times, 3.5 times, 4 times, 4.5 times or 5 times, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0012] The horizontal direction in the present invention is the direction of the horizontal plane where the bottom surface of the base is located.

[0013] Preferably, the base is made of a polymer material, preferably polytetrafluoroethylene or resin.

[0014] Preferably, the V-groove is arranged at the bottom center of the U-shaped surface of the base, and the opening width of the V-groove is 10 to 50% of the maximum width of the sample to be cut in the horizontal direction, for example, it can be 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45% or 50%, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0015] Preferably, along the vertical direction, the height difference between the highest point of the non-Newtonian fluid material protruding from the base surface and the lowest point of the top surface of the base is 0.1-2 mm, for example, it can be 0.1 mm, 0.3 mm, 0.5 mm, 0.7 mm, 0.9 mm, 1 mm, 1.2 mm, 1.4 mm, 1.6 mm, 1.8 mm or 2 mm, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable, preferably 0.3-0.8 mm.

[0016] The vertical direction mentioned in the present invention refers to the direction perpendicular to the base.

[0017] In a second aspect, the present invention provides a method for preparing a crystal defect analysis sample using the preparation device described in the first aspect, the method comprising:

[0018] The sample to be cut is placed directly above the V-groove provided on the top surface of the base, and downward pressure is applied to the sample to be cut in the vertical direction so that part of the sample to be cut enters the V-groove. When the contact portion between the sample to be cut and the base is at the opening edge of the V-groove, the pressure is stopped. After the sample to be cut and the base are fixed by an adhesive, single-loop wire cutting and demolding are performed in sequence to obtain a longitudinally cut crystal defect analysis sample.

[0019] In the method provided by the present invention, the application of pressure is stopped when the contact portion between the sample to be cut and the base is the opening edge of the V-shaped groove, that is: initially, the sample to be cut is placed directly above the V-shaped groove of the base, and since the non-Newtonian fluid material completely fills the V-shaped groove and protrudes from the surface of the base, there is no area in direct contact between the sample to be cut and the base; the sample to be cut moves toward the direction of the V-shaped groove under the action of pressure, and the bottom of the sample to be cut gradually enters the V-shaped groove, and the non-Newtonian fluid material in the V-shaped groove is gradually squeezed out, but at this time, since the diameter of the sample to be cut that enters the V-shaped groove in the horizontal direction is smaller than the opening diameter of the V-shaped groove, the sample to be cut still does not contact the base; until the maximum diameter of the sample to be cut that enters the V-shaped groove in the horizontal direction is equal to the opening diameter of the V-shaped groove, the contact portion between the sample to be cut and the base is the opening edge of the V-shaped groove, and the application of pressure is stopped at this time, the opening of the V-shaped groove clamps the sample to be cut, and the non-Newtonian fluid material in the V-shaped groove fully wraps and adheres the sample to be cut.

[0020] The method for preparing a crystal defect analysis sample provided by the present invention can prepare a crystal defect analysis sample, and has a simple process and low use cost, which is conducive to large-scale promotion and use.

[0021] Preferably, the method of fixing the sample to be cut and the base by means of an adhesive comprises: filling the U-shaped space formed on the U-shaped surface of the base with the adhesive, and fixing the sample to be cut and the base in the U-shaped space after curing.

[0022] Preferably, the adhesive includes epoxy resin AB glue, and the ratio of A glue to B glue of the epoxy resin AB glue is 1:(1.8-2.2), for example, it can be 1:1.8, 1:1.85, 1:1.9, 1:1.95, 1:2, 1:2.05, 1:2.1, 1:2.15 or 1:2.2, but it is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0023] Preferably, the curing temperature is 0-50°C, for example, it can be 0°C, 5°C, 10°C, 15°C, 20°C, 25°C, 30°C, 35°C, 40°C, 45°C or 50°C, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable, preferably 20-30°C.

[0024] Preferably, the curing time is 1 to 4 hours, for example, 1 hour, 1.5 hours, 2 hours, 2.5 hours, 3 hours, 3.5 hours or 4 hours, but is not limited to the listed values. Other unlisted values ​​within the numerical range are also applicable, preferably 2.5 to 3.5 hours.

[0025] Preferably, the bottom center of the V-shaped groove is located on a central axis, and the cutting line is aligned with the central axis in the vertical direction during the single-loop wire cutting.

[0026] Preferably, the feed rate of the single-loop wire cutting is 0.1-20 mm / min, for example, it can be 0.1 mm / min, 0.5 mm / min, 1 mm / min, 3 mm / min, 5 mm / min, 7 mm / min, 10 mm / min, 12 mm / min, 14 mm / min, 16 mm / min, 18 mm / min or 20 mm / min, but is not limited to the listed values. Other unlisted values ​​within the numerical range are also applicable, preferably 1-5 mm / min.

[0027] Preferably, the temperature of the demolding treatment is not less than 60°C, for example, it can be 60°C, 65°C, 70°C, 75°C, 80°C, 85°C, 90°C or 95°C, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0028] In a third aspect, the present invention provides a crystal defect analysis sample, wherein the crystal defect analysis sample is obtained by the method described in the second aspect.

[0029] In a fourth aspect, a method for analyzing crystal defects is provided, wherein the method is performed using the crystal defect analysis sample described in the third aspect.

[0030] The numerical range described in the present invention not only includes the point values ​​listed above, but also includes any point values ​​between the above numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values ​​included in the range.

[0031] Compared with the prior art, the present invention has the following beneficial effects:

[0032] (1) A V-shaped groove is provided on the top surface of the base described in the present invention, and a non-Newtonian fluid material is provided in the V-shaped groove. The sample to be cut moves into the V-shaped groove under the action of pressure, and the non-Newtonian fluid material is squeezed out, thereby leaving an embedding space for the sample to be cut. After the sample to be cut is partially embedded in the V-shaped groove, the V-shaped groove clamps the sample to be cut, thereby achieving the position limitation of the sample to be cut; in addition, the sample to be cut partially embedded in the V-shaped groove is in full contact with the non-Newtonian fluid material that has not been squeezed out in the V-shaped groove, and the bonding effect between the non-Newtonian fluid material and the sample to be cut further achieves the position limitation of the sample to be cut. Therefore, the preparation device described in the present invention can achieve the precise fixation of the sample to be cut, thereby cooperating with the wire cutting to achieve the cutting of the sample to be cut, obtaining a longitudinally cut crystal defect analysis sample, and realizing the analysis of crystal defects; using the preparation device to prepare the crystal defect analysis sample can analyze the necking and fine crystal parts during the crystal growth process, and study the defects of the necking and fine crystal parts;

[0033] (2) The method for preparing crystal defect analysis samples provided by the present invention can prepare crystal defect analysis samples, and has a simple process and low use cost, which is conducive to large-scale promotion and use. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 It is a schematic diagram of the structure of a device for preparing crystal defect analysis samples and a sample to be cut provided in a specific embodiment of the present invention.

[0035] Figure 2 It is a schematic diagram of a specific embodiment of the present invention after a portion of the sample to be cut is embedded in the V-shaped groove and a non-Newtonian fluid material is squeezed out.

[0036] Figure 3 This is a cross-sectional view of the crystal defect analysis sample obtained in Application Example 1 of the present invention.

[0037] Figure 4 It is an enlarged view of the defect on the cross section of the crystal defect analysis sample obtained in Application Example 1 of the present invention.

[0038] Wherein: 1-base; 2-V-groove; 3-non-Newtonian fluid material; 4-sample to be cut. DETAILED DESCRIPTION

[0039] It should be understood that in the description of the present invention, the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features.

[0040] The technical solution of the present invention is further described below by specific implementation methods. It should be understood by those skilled in the art that the embodiments are only to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0041] In a specific embodiment, Figure 1 As shown, the present invention provides a preparation device for crystal defect analysis samples, the preparation device comprising a base 1, a V-shaped groove 2 is arranged on the top surface of the base 1, a non-Newtonian fluid material 3 is arranged in the V-shaped groove 2, and the non-Newtonian fluid material 3 protrudes from the surface of the base 1 after completely filling the V-shaped groove 2.

[0042] The top surface of the base 1 of the present invention is provided with a V-shaped groove 2, and a non-Newtonian fluid material 3 is provided in the V-shaped groove 2. The sample 4 to be cut moves into the V-shaped groove 2 under the action of pressure. Figure 2 As shown, the non-Newtonian fluid material 3 is squeezed out, thereby leaving an embedding space for the sample 4 to be cut. After the sample 4 to be cut is partially embedded in the V-groove 2, the V-groove 2 clamps the sample 4 to be cut, thereby achieving the position limitation of the sample 4 to be cut; in addition, the sample 4 to be cut partially embedded in the V-groove 2 is fully in contact with the non-Newtonian fluid material 3 that is not squeezed out in the V-groove 2, and the bonding effect between the non-Newtonian fluid material 3 and the sample 4 to be cut further achieves the position limitation of the sample 4 to be cut. Therefore, the preparation device described in the present invention can achieve the precise fixation of the sample 4 to be cut, thereby cooperating with the wire cutting to achieve the cutting of the sample 4 to be cut, obtaining a longitudinally cut crystal defect analysis sample, and realizing the analysis of crystal defects; using the preparation device to prepare the crystal defect analysis sample, it is possible to analyze the necking and fine crystal parts during the crystal growth process, and study the defects of the necking and fine crystal parts.

[0043] Further, the top surface of the base 1 is a U-shaped surface, and the bottom center of the U-shaped surface is located on a bottom axis;

[0044] On the cross section of the base 1 perpendicular to the bottom axis direction, the top of the base 1 is a U-shaped curve, and the opening width of the U-shaped curve is 1 to 5 times greater than the maximum width of the sample 4 to be cut in the horizontal direction.

[0045] Furthermore, the base 1 is made of a polymer material, preferably polytetrafluoroethylene or resin.

[0046] Furthermore, the V-shaped groove 2 is arranged at the bottom center of the U-shaped surface of the base 1 , and the opening width of the V-shaped groove 2 is 10 to 50% of the maximum width of the sample 4 to be cut in the horizontal direction.

[0047] Furthermore, along the vertical direction, the height difference between the highest point of the non-Newtonian fluid material 3 protruding from the surface of the base 1 and the lowest point of the top surface of the base 1 is 0.1-2 mm.

[0048] Furthermore, along the vertical direction, the height difference between the highest point of the non-Newtonian fluid material 3 protruding from the surface of the base 1 and the lowest point of the top surface of the base 1 is 0.3-0.8 mm.

[0049] Example 1

[0050] This embodiment provides a preparation device for crystal defect analysis samples, the preparation device comprising a base 1, the top surface of the base 1 is a U-shaped surface, the bottom center of the U-shaped surface is located on a bottom axis, and on a cross section of the base 1 perpendicular to the bottom axis, the top of the base 1 is a U-shaped curve, and the opening width of the U-shaped curve is greater than 3 times the maximum width of the sample 4 to be cut in the horizontal direction;

[0051] A V-shaped groove 2 is provided on the top surface of the base 1, and the V-shaped groove 2 is provided at the bottom center of the U-shaped surface of the base 1, and the opening width of the V-shaped groove 2 is 30% of the maximum width of the sample 4 to be cut in the horizontal direction;

[0052] A non-Newtonian fluid substance 3 is arranged in the V-shaped groove 2. After the non-Newtonian fluid substance 3 completely fills the V-shaped groove 2, it protrudes from the surface of the base 1. Along the vertical direction, the height difference between the highest point of the non-Newtonian fluid substance 3 protruding from the surface of the base 1 and the lowest point of the top surface of the base 1 is 0.8 mm.

[0053] Example 2

[0054] This embodiment provides a preparation device for crystal defect analysis samples, the preparation device comprising a base 1, the top surface of the base 1 is a U-shaped surface, the bottom center of the U-shaped surface is located on a bottom axis, and on a cross section of the base 1 perpendicular to the bottom axis, the top of the base 1 is a U-shaped curve, and the opening width of the U-shaped curve is greater than 5 times the maximum width of the sample 4 to be cut in the horizontal direction;

[0055] A V-shaped groove 2 is provided on the top surface of the base 1, and the V-shaped groove 2 is provided at the bottom center of the U-shaped surface of the base 1, and the opening width of the V-shaped groove 2 is 50% of the maximum width of the sample 4 to be cut in the horizontal direction;

[0056] A non-Newtonian fluid substance 3 is arranged in the V-shaped groove 2. After the non-Newtonian fluid substance 3 completely fills the V-shaped groove 2, it protrudes from the surface of the base 1. In the vertical direction, the height difference between the highest point of the non-Newtonian fluid substance 3 protruding from the surface of the base 1 and the lowest point of the top surface of the base 1 is 2 mm.

[0057] Example 3

[0058] This embodiment provides a preparation device for crystal defect analysis samples, the preparation device comprising a base 1, the top surface of the base 1 is a U-shaped surface, the bottom center of the U-shaped surface is located on a bottom axis, and on a cross section of the base 1 perpendicular to the bottom axis, the top of the base 1 is a U-shaped curve, and the opening width of the U-shaped curve is greater than 1 times the maximum width of the sample 4 to be cut in the horizontal direction;

[0059] A V-shaped groove 2 is provided on the top surface of the base 1, and the V-shaped groove 2 is provided at the bottom center of the U-shaped surface of the base 1, and the opening width of the V-shaped groove 2 is 10% of the maximum width of the sample 4 to be cut in the horizontal direction;

[0060] A non-Newtonian fluid substance 3 is arranged in the V-shaped groove 2. After the non-Newtonian fluid substance 3 completely fills the V-shaped groove 2, it protrudes from the surface of the base 1. Along the vertical direction, the height difference between the highest point of the non-Newtonian fluid substance 3 protruding from the surface of the base 1 and the lowest point of the top surface of the base 1 is 0.1 mm.

[0061] Application Example 1

[0062] This embodiment also provides a method for preparing a crystal defect analysis sample using the preparation device described in Embodiment 1, the method comprising:

[0063] The sample 4 to be cut is placed just above the V-shaped groove 2 provided on the top surface of the base 1, and downward pressure is applied to the sample 4 to be cut in the vertical direction, so that part of the sample 4 to be cut enters the V-shaped groove 2. When the contact portion between the sample 4 to be cut and the base 1 is at the opening edge of the V-shaped groove 2, the pressure is stopped, and then the U-shaped space formed by the U-shaped surface of the base 1 is filled with adhesive, and after curing, the sample 4 to be cut and the base 1 are fixed in the U-shaped space;

[0064] Then single-loop wire cutting is performed, the bottom center of the V-shaped groove 2 is located on a central axis, and the cutting line is aligned with the central axis in the vertical direction during the single-loop wire cutting;

[0065] Then demoulding treatment was carried out at 80°C to obtain Figure 3 A longitudinally sectioned crystal defect analysis sample is shown.

[0066] Application Example 2

[0067] This embodiment also provides a method for preparing a crystal defect analysis sample using the preparation device described in Embodiment 2, the method comprising:

[0068] The sample 4 to be cut is placed just above the V-shaped groove 2 provided on the top surface of the base 1, and downward pressure is applied to the sample 4 to be cut in the vertical direction, so that part of the sample 4 to be cut enters the V-shaped groove 2. When the contact portion between the sample 4 to be cut and the base 1 is at the opening edge of the V-shaped groove 2, the pressure is stopped, and then the U-shaped space formed by the U-shaped surface of the base 1 is filled with adhesive, and after curing, the sample 4 to be cut and the base 1 are fixed in the U-shaped space;

[0069] Then single-loop wire cutting is performed, the bottom center of the V-shaped groove 2 is located on a central axis, and the cutting line is aligned with the central axis in the vertical direction during the single-loop wire cutting;

[0070] The mold release treatment was then carried out at 90°C to obtain a longitudinally cut crystal defect analysis sample.

[0071] Application Example 3

[0072] This embodiment also provides a method for preparing a crystal defect analysis sample using the preparation device described in Embodiment 3, the method comprising:

[0073] The sample 4 to be cut is placed just above the V-shaped groove 2 provided on the top surface of the base 1, and downward pressure is applied to the sample 4 to be cut in the vertical direction, so that part of the sample 4 to be cut enters the V-shaped groove 2. When the contact portion between the sample 4 to be cut and the base 1 is at the opening edge of the V-shaped groove 2, the pressure is stopped, and then the U-shaped space formed by the U-shaped surface of the base 1 is filled with adhesive, and after curing, the sample 4 to be cut and the base 1 are fixed in the U-shaped space;

[0074] Then single-loop wire cutting is performed, the bottom center of the V-shaped groove 2 is located on a central axis, and the cutting line is aligned with the central axis in the vertical direction during the single-loop wire cutting;

[0075] The mold release treatment was then carried out at 60°C to obtain a longitudinally cut crystal defect analysis sample.

[0076] The method for preparing a crystal defect analysis sample by the preparation device provided in the above embodiment is used to prepare a crystal defect analysis sample, and the obtained crystal defect analysis sample is Figure 4 By analyzing the crystal defects shown, it is possible to analyze the necking and fine grain parts during the crystal growth process and study the defects in the necking and fine grain parts.

[0077] The above description is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention are within the protection scope and disclosure scope of the present invention.

Claims

1. A device for preparing samples for crystal defect analysis, characterized in that: The preparation device comprises a base, a V-shaped groove is arranged on the top surface of the base, a non-Newtonian fluid material is arranged in the V-shaped groove, and the non-Newtonian fluid material completely fills the V-shaped groove and protrudes from the surface of the base.

2. The preparation device according to claim 1, characterized in that: The top surface of the base is a U-shaped surface, and the bottom center of the U-shaped surface is located on a bottom axis; On the cross section of the base perpendicular to the bottom axis direction, the top of the base is a U-shaped curve, and the opening width of the U-shaped curve is 1 to 5 times greater than the maximum width of the sample to be cut in the horizontal direction.

3. The preparation device according to claim 1 or 2, characterized in that: The V-shaped groove is arranged at the bottom center of the U-shaped surface of the base, and the opening width of the V-shaped groove is 10-50% of the maximum width of the sample to be cut in the horizontal direction.

4. The preparation device according to any one of claims 1 to 3, characterized in that: In the vertical direction, the height difference between the highest point of the non-Newtonian fluid material protruding from the surface of the base and the lowest point of the top surface of the base is 0.1-2 mm, preferably 0.3-0.8 mm.

5. A method for preparing a crystal defect analysis sample using the preparation device according to any one of claims 1 to 4, characterized in that: The method comprises: The sample to be cut is placed directly above the V-groove provided on the top surface of the base, and downward pressure is applied to the sample to be cut in the vertical direction so that part of the sample to be cut enters the V-groove. When the contact portion between the sample to be cut and the base is at the opening edge of the V-groove, the pressure is stopped. After the sample to be cut and the base are fixed by an adhesive, single-loop wire cutting and demolding are performed in sequence to obtain a longitudinally cut crystal defect analysis sample.

6. The method according to claim 5, characterized in that The method of fixing the sample to be cut and the base by means of an adhesive includes: filling the U-shaped space formed by the U-shaped surface of the base with the adhesive, and fixing the sample to be cut and the base in the U-shaped space after curing.

7. The method according to claim 5 or 6, characterized in that: The bottom center of the V-shaped groove is located on a central axis, and the cutting line is aligned with the central axis in the vertical direction during the single-loop wire cutting.

8. The method according to any one of claims 5 to 7, characterized in that: The temperature of the demoulding treatment is not less than 60°C.

9. A crystal defect analysis sample, characterized in that: The crystal defect analysis sample is obtained by the method according to any one of claims 5 to 8.

10. A method for analyzing crystal defects, characterized in that: The analysis method is performed using the crystal defect analysis sample according to claim 9.

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