Insulating medium layer time-dependent breakdown life prediction method, device and equipment and medium

Abstract

The invention relates to the technical field of semiconductor device process reliability testing, and discloses a method, a device and equipment for predicting the time-dependent breakdown life of an insulating dielectric layer, and a medium, and the method comprises the steps: carrying out the ramp voltage testing of the insulating dielectric layer in a plurality of to-be-predicted devices; determining the breakdown electric field intensity of each to-be-predicted device according to the ramp voltage test result, the nominal insulation dielectric layer thickness and the specified voltage; determining the TDDB life of each insulating dielectric layer according to an electric field acceleration model corresponding to the TDDB and the breakdown electric field intensity of each to-be-predicted device; constants in the electric field acceleration model are determined according to TDDB test results obtained by carrying out TDDB tests on historical devices. According to the scheme disclosed by the invention, the slope voltage test is performed on the to-be-predicted device and the TDDB test result of the historical device is combined to predict the TDDB life of the insulating dielectric layer, so that the TDDB life prediction efficiency of the insulating dielectric layer is improved, and the TDDB life evaluation is quickly and effectively performed.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor device process reliability testing, and in particular to a method, device, equipment and medium for predicting the time-dependent breakdown life of an insulating dielectric layer. Background Art

[0002] TDDB (Time Dependent Dielectric Breakdown) is divided into TDDB of the insulating material of the gate oxide layer of the front-end device and TDDB between the metal layer and the dielectric material of the back-end. These insulating dielectric materials will degrade under long-term electric field stress conditions and cause short circuits, thereby affecting the normal operation of the integrated circuits and system products using the device, resulting in serious failure problems. Therefore, it is particularly important to perform TDDB life testing and evaluation on the insulating dielectric layer.

[0003] At present, when predicting the TDDB life of the insulating dielectric layer in a semiconductor device, a constant voltage is applied to the insulating dielectric layer at a certain temperature, and the leakage current passing through the insulating dielectric layer is monitored. When the leakage current exceeds a certain value, this time is determined as the time of the insulating dielectric layer breakdown failure, that is, the TDDB life of the insulating dielectric layer. This TDDB test takes a long time and the TDDB life prediction efficiency is low.

[0004] In summary, how to improve the efficiency of TDDB lifetime prediction for the insulating dielectric layer is a technical problem that needs to be urgently solved by those skilled in the art. Summary of the invention

[0005] In view of this, the purpose of this application is to provide a method, device, equipment and medium for predicting the breakdown life of an insulating dielectric layer over time. In order to achieve the above objectives, this application provides the following technical solutions: A method for predicting the time-dependent breakdown life of an insulating dielectric layer, comprising: Performing a ramp voltage test on the insulating dielectric layers in a plurality of devices to be predicted to obtain a ramp voltage test result; each of the devices to be predicted is prepared using the same process; Determine the breakdown electric field strength corresponding to each of the components to be predicted according to the ramp voltage test result, the nominal insulating dielectric layer thickness and the specified voltage; Obtain an electric field acceleration model corresponding to TDDB, and determine the TDDB life of each insulating dielectric layer according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted; the electric field acceleration model includes electric field strength parameters, and the constants in the electric field acceleration model are determined by using the TDDB test results obtained by performing TDDB tests on historical devices, and the historical devices and the devices to be predicted are prepared using the same process.

[0006] Optionally, the ramp voltage test result includes a first breakdown voltage of a first preset ratio of the components to be predicted when breakdown occurs and a second breakdown voltage of each of the components to be predicted; Determining the breakdown electric field strength corresponding to each of the components to be predicted according to the ramp voltage test result, the nominal insulating dielectric layer thickness and the specified voltage, including: Determining an inherent breakdown electric field strength according to the first breakdown voltage and the nominal insulating dielectric layer thickness; Determine the thickness of each of the insulating dielectric layers according to the second breakdown voltage of each of the devices to be predicted and the inherent breakdown electric field strength; The breakdown electric field strength corresponding to each of the components to be predicted is determined according to the specified voltage and the thickness of each of the insulating dielectric layers.

[0007] Optionally, before determining the thickness of each insulating dielectric layer according to the second breakdown voltage of each device to be predicted and the inherent breakdown electric field strength, the method further includes: Determine whether there is a second breakdown voltage of the device to be predicted that is not greater than the product of the operating voltage of the device to be predicted and a preset coefficient; the preset coefficient is greater than 1; If so, the device to be predicted and its second breakdown voltage are eliminated.

[0008] Optionally, when the electric field acceleration model is an E model, determining the TDDB life of each of the insulating dielectric layers according to the electric field acceleration model and the breakdown electric field strength corresponding to each of the components to be predicted includes: use Determine the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted ; Among them, A and are constants in the E model, is the breakdown electric field strength corresponding to the i-th device to be predicted.

[0009] Optionally, when the electric field acceleration model is When the model is used, the TDDB life of each insulating dielectric layer is determined according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted, including: use Determine the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted ; Among them, A and All of the above The constants in the model, is the breakdown electric field strength corresponding to the i-th device to be predicted.

[0010] Optionally, when the electric field acceleration model is When the model is used, the TDDB life of each insulating dielectric layer is determined according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted, including: use Determine the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted ; Among them, A and All of the above The constants in the model, is the breakdown electric field strength corresponding to the i-th device to be predicted.

[0011] Optionally, the constants in the electric field acceleration model are determined using TDDB test results obtained by performing TDDB tests on historical devices, including: Performing logarithmic transformation on the electric field acceleration model to obtain a linear expression model between electric field intensity and TDDB lifespan; Obtain multiple groups of test data by performing TDDB tests on the historical device, fit the linear expression model according to the multiple groups of test data, and determine the constants in the electric field acceleration model; wherein each group of the test data includes a test electric field strength and a second preset proportion of the time when the historical device fails under the test electric field strength.

[0012] A device for predicting the time-dependent breakdown life of an insulating dielectric layer, comprising: A test module, used for performing a ramp voltage test on the insulating dielectric layers in a plurality of devices to be predicted, and obtaining a ramp voltage test result; each of the devices to be predicted is prepared by the same process; A first determination module is used to determine the breakdown electric field strength corresponding to each of the components to be predicted according to the ramp voltage test result, the nominal insulation dielectric layer thickness and the specified voltage; The second determination module is used to obtain the electric field acceleration model corresponding to TDDB, and determine the TDDB life of each insulating dielectric layer according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted; the electric field acceleration model includes electric field strength parameters, and the constants in the electric field acceleration model are determined by using the TDDB test results obtained by performing TDDB tests on historical devices, and the historical devices and the devices to be predicted are prepared using the same process.

[0013] An insulating dielectric layer time-dependent breakdown life prediction device, comprising: Memory for storing computer programs; A processor is used to implement the steps of the method for predicting the time-dependent breakdown life of an insulating dielectric layer as described in any one of the above items when executing the computer program.

[0014] A readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the method for predicting the time-dependent breakdown life of an insulating dielectric layer as described in any one of the above items are implemented.

[0015] The present application provides a method, device, equipment and medium for predicting the time-dependent breakdown lifetime of an insulating dielectric layer, wherein the method comprises: performing a ramp voltage test on the insulating dielectric layer in a plurality of devices to be predicted to obtain a ramp voltage test result; each device to be predicted is prepared using the same process; determining the breakdown electric field strength corresponding to each device to be predicted based on the ramp voltage test result, the nominal insulating dielectric layer thickness and the specified voltage; obtaining an electric field acceleration model corresponding to TDDB, and determining the TDDB lifetime of each insulating dielectric layer based on the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted; the electric field acceleration model includes an electric field strength parameter, and the constants in the electric field acceleration model are determined using the TDDB test results obtained by performing a TDDB test on historical devices, and the historical devices and the devices to be predicted are prepared using the same process.

[0016] The above technical solution disclosed in the present application performs a ramp voltage test on the insulating dielectric layer in the device to be predicted, determines the breakdown electric field strength corresponding to each device to be predicted based on the ramp voltage test result, the nominal insulating dielectric layer thickness and the specified voltage, substitutes the determined breakdown electric field strength corresponding to each device to be predicted into the electric field acceleration model corresponding to TDDB to predict the TDDB life of the insulating dielectric layer in each device to be tested, wherein the constants in the electric field acceleration model can be determined using the TDDB test results obtained by performing TDDB tests on historical devices, and the historical devices and the devices to be predicted are prepared using the same process. Thus, the TDDB life of the insulating dielectric layer in the device to be predicted is predicted by performing a ramp voltage test on the device to be predicted and combining the TDDB test results of the historical devices. Since the ramp voltage test is very fast, the time spent on the TDDB life prediction of the insulating dielectric layer can be shortened by the present application, the efficiency of the TDDB life prediction of the insulating dielectric layer can be improved, and the TDDB life evaluation can be performed quickly and effectively.

[0017] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 A flowchart of a method for predicting the time-dependent breakdown life of an insulating dielectric layer provided in an embodiment of the present application; Figure 2 A schematic diagram of the cumulative failure percentage of Vramp provided in an embodiment of the present application; Figure 3 Provided in the embodiments of this application Schematic diagram of the corresponding fitting straight line; Figure 4 A schematic diagram of the structure of a device for predicting the breakdown life of an insulating dielectric layer over time provided in an embodiment of the present application; Figure 5 A schematic diagram of the structure of a device for predicting the breakdown life of an insulating dielectric layer over time provided in an embodiment of the present application. DETAILED DESCRIPTION

[0019] TDDB refers to the breakdown that produces a short circuit only after a proper constant voltage is continuously applied to the insulating dielectric layer. TDDB is divided into the TDDB of the insulating material of the gate oxide layer of the front-end device and the TDDB between the dielectric materials between the back-end metal layers. These insulating dielectric materials will experience material degradation under long-term electric field stress conditions and cause short circuits, thereby affecting the normal operation of the integrated circuit and system products using the device, resulting in serious failure problems. Therefore, the testing and evaluation of the TDDB life of the insulating dielectric layer is particularly important. In addition, as the process and chip design cycle are getting shorter and shorter, the requirements for life test time are becoming more and more stringent. How to quickly and effectively evaluate the TDDB life has become a hot spot and difficulty in the current TDDB life test.

[0020] At present, when predicting the TDDB life of the insulating dielectric layer in a semiconductor device, a constant voltage is applied to the insulating dielectric layer at a certain temperature, and the leakage current passing through the insulating dielectric layer is monitored. When the leakage current exceeds a certain value, this time is determined as the time of the insulating dielectric layer breakdown failure, that is, the TDDB life of the insulating dielectric layer. This TDDB test takes a long time, and the TDDB life prediction efficiency is low, which is not convenient for rapid testing and evaluation of the TDDB life of a newly designed wafer process.

[0021] To this end, the present application provides a method, device, equipment and readable storage medium for predicting the time-dependent breakdown lifetime of an insulating dielectric layer, which are used to improve the efficiency of predicting the TDDB lifetime of the insulating dielectric layer.

[0022] Embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present application, and should not be construed as limiting the present application.

[0023] See also Figure 1 , which shows a flow chart of a method for predicting the time-dependent breakdown life of an insulating dielectric layer provided in an embodiment of the present application. The method for predicting the time-dependent breakdown life of an insulating dielectric layer provided in an embodiment of the present application may include: S11: performing a ramp voltage test on the insulating dielectric layers in a plurality of devices to be predicted to obtain a ramp voltage test result; each device to be predicted is manufactured using the same process.

[0024] A ramp voltage test (i.e., Vramp test) is performed on the insulating dielectric layer in multiple devices to be predicted prepared by the same process to obtain the ramp voltage test results. The ramp voltage test is to linearly ramp up the acceleration voltage from the operating voltage to the breakdown of the insulating dielectric layer. The test takes a very short time and the test is very fast. It should be noted that the device to be predicted mentioned in the embodiment of the present application is specifically a semiconductor device to be predicted, such as a MOS (Metal-Oxide-Semiconductor Field Effect Transistor) device, and the insulating dielectric layer mentioned in the embodiment of the present application can be specifically a gate oxide layer, and of course, it can also be other insulating dielectric layers.

[0025] For example, the voltage rising slope can be 1MV / cm·s, the step length can be 1MV / cm·s, and the step length can be 1MV / cm·s. dd The ramp voltage test is performed on the insulating dielectric layer of each device to be predicted by setting the voltage step to 2% of the original voltage. Starting from 0V, the dwell time of each voltage step is 0.1s. For example, for a 2.5V PMOS device, its operating voltage V dd Of course, the present application embodiment does not limit the parameters such as the voltage rise slope, voltage rise step length, and dwell time of each voltage step used in the ramp voltage test, and the specific parameter values ​​can be set according to actual conditions.

[0026] The breakdown mentioned above refers to hard breakdown. Hard breakdown is a destructive breakdown caused by a permanent conductive channel between the cathode and the anode. During hard breakdown, the current changes dramatically. When the leakage current increases to 1mA (of course, this value can be changed according to the type of device to be predicted, etc.), it is considered to be completely failed.

[0027] S12: Determine the breakdown electric field strength corresponding to each device to be predicted according to the ramp voltage test result, the nominal insulation dielectric layer thickness and the specified voltage.

[0028] In addition, the nominal insulating dielectric layer thickness may also be obtained. The nominal insulating dielectric layer thickness refers to a design value of the insulating dielectric layer when the process design is performed on the predicted device, that is, a typical design thickness value of the insulating dielectric layer.

[0029] Furthermore, the specified voltage can be obtained. Specifically, if you want to predict the breakdown life of the insulating dielectric layer at a certain voltage, you can determine the corresponding voltage as the specified voltage. In order to make the prediction of the breakdown life of the insulating dielectric layer closer to the actual use environment, the specified voltage may not exceed the working voltage V of the device to be predicted. dd 1.5 times, for example, V dd ±10%V dd Of course, the specified voltage may not be limited to this.

[0030] Then, the breakdown electric field strength corresponding to each device to be predicted can be determined according to the nominal insulating dielectric layer thickness, the specified voltage, and the ramp voltage test result obtained in step S11, so as to determine the TDDB life of the insulating dielectric layer in each device to be predicted based on the breakdown electric field strength corresponding to each device to be predicted. Exemplarily, the thickness of the insulating dielectric layer in each device to be predicted can be determined according to the ramp voltage test result, and the breakdown electric field strength corresponding to each device to be predicted can be determined according to the thickness of the insulating dielectric layer in each device to be predicted.

[0031] S13: Obtain an electric field acceleration model corresponding to TDDB, and determine the TDDB life of each insulating dielectric layer according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted; the electric field acceleration model includes electric field strength parameters, and the constants in the electric field acceleration model are determined by using the TDDB test results obtained by performing TDDB tests on historical devices. The historical devices and the devices to be predicted are manufactured using the same process.

[0032] In an embodiment of the present application, an electric field acceleration model corresponding to TDDB can also be obtained, and the electric field acceleration model includes an electric field strength parameter, so that the breakdown electric field strength corresponding to the device to be predicted calculated in step S12 can be used as an electric field strength parameter to participate in the electric field acceleration model corresponding to TDDB to obtain the TDDB life of the corresponding insulating dielectric layer.

[0033] The electric field acceleration model mentioned above can be specifically the E model, the 1 / E model, Models, etc.

[0034] The E model is also called the Thermochemical Breakdown Model. This model assumes that the degradation and breakdown of the oxide layer over time is a thermodynamic process. The main reason may be that the dipole interaction under thermal stress and external electric field destroys the Si-O bond and causes breakdown.

[0035] The 1 / E model is also known as the Hole-Induced Breakdown Model. When electrons are injected from the polysilicon gate, some electrons with high enough energy can directly cross the cathode barrier of 3.1eV and are accelerated to the anode by the electric field of SiO2. Other electrons with lower energy tunnel to the conduction band of SiO2 or directly to the anode through FN. The number of electrons that can cross 3.1eV at the standard device operating temperature (<150°C) can be ignored. If the electric field applied to the gate oxide layer is greater than 5MV / cm, FN tunneling will dominate, but when the thickness of the gate oxide layer is less than 5nm, direct tunneling will dominate. When electrons pass through the oxide layer under a high electric field, they will collide with the lattice and scatter. After reaching the anode, the electrons will release energy to the lattice, causing damage to the Si-O bond and the appearance of electron traps and hole traps. Another part of the electrons transfer energy to the electrons in the valence band of the anode and excite them into the conduction band to generate electron-hole pairs. The generated holes tunnel back to the oxide layer to form a hole tunneling current. Since the mobility of holes is 2 to 3 orders of magnitude lower than that of electrons, holes are easily captured by traps. These trapped holes generate an electric field in the oxide layer, causing the local current at the defect to increase continuously, forming a positive feedback. The number of traps continues to increase, and when the traps overlap and form a conductive channel, the oxide layer is broken down.

[0036] The intrinsic breakdown of TDDB can be divided into two processes: soft breakdown and hard breakdown. During the soft breakdown process, the current basically does not change. During the hard breakdown, a permanent conductive channel is created between the cathode and the anode, causing a destructive breakdown. During hard breakdown, the current changes dramatically. The failure modes discussed in this article are all hard breakdowns, and when the leakage current increases to 1mA (of course, this value can be changed according to the type of device to be predicted, etc.), it is considered a complete failure.

[0037] The constants in the electric field acceleration model corresponding to TDDB can be determined by using the TDDB test results obtained by performing TDDB tests on historical devices, wherein the historical devices and the devices to be predicted are devices of the same process type, that is, the historical devices and the devices to be predicted are prepared using the same process, that is, the constants in the electric field acceleration model can be obtained through the historical TDDB data of devices of the same process type, so as to improve the accuracy of TDDB lifetime prediction. In other words, the TDDB test results obtained by performing TDDB tests on historical devices can be obtained, and the electric field acceleration model corresponding to TDDB can be processed according to the TDDB test results of the historical devices to obtain the constants in the electric field acceleration model.

[0038] On the basis of the above, the breakdown electric field strength corresponding to each device to be predicted obtained in step S12 can be respectively substituted into the electric field acceleration model corresponding to TDDB to obtain the TDDB life of the insulating dielectric layer in each device to be predicted.

[0039] From the above, it can be known that the embodiment of the present application predicts the TDDB life of the insulating dielectric layer of the device to be predicted through the ramp voltage test results. The method provided by the embodiment of the present application is different from the traditional TDDB test method. It is not necessary to perform a TDDB test. It only needs to perform a ramp voltage test, and then based on the historical device TDDB and ramp voltage test data, the TDDB life of the device to be predicted can be derived, that is, the embodiment of the present application performs TDDB life evaluation by combining the ramp voltage test data and the historical TDDB test results. Since the TDDB test time is much longer than the ramp voltage test time, the method provided by the embodiment of the present application solves the technical problems of long TDDB life prediction cycle and low prediction efficiency of the insulating dielectric layer in the semiconductor device. The method provided by the embodiment of the present application greatly shortens the TDDB life evaluation time, and can realize fast and effective TDDB life evaluation, so as to facilitate the fast and effective testing and evaluation of the TDDB life of the newly designed wafer process.

[0040] The above technical solution disclosed in the embodiment of the present application performs a ramp voltage test on the insulating dielectric layer in the device to be predicted, determines the breakdown electric field strength corresponding to each device to be predicted based on the ramp voltage test result, the nominal insulating dielectric layer thickness and the specified voltage, substitutes the determined breakdown electric field strength corresponding to each device to be predicted into the electric field acceleration model corresponding to TDDB to predict the TDDB life of the insulating dielectric layer in each device to be predicted, wherein the constant in the electric field acceleration model can be determined by using the TDDB test result obtained by performing a TDDB test on a historical device, and the historical device and the device to be predicted are prepared using the same process. Thus, the TDDB life of the insulating dielectric layer in the device to be predicted is predicted by performing a ramp voltage test on the device to be predicted and combining the TDDB test result of the historical device. Since the ramp voltage test is very fast, the time spent on the TDDB life prediction of the insulating dielectric layer can be shortened through the embodiment of the present application, the efficiency of the TDDB life prediction of the insulating dielectric layer can be improved, and the TDDB life evaluation can be performed quickly and effectively.

[0041] An embodiment of the present application provides a method for predicting the breakdown life of an insulating dielectric layer over time, wherein the ramp voltage test result may include a first breakdown voltage when a first preset proportion of the predicted devices breakdown and a second breakdown voltage of each predicted device; Determining the breakdown electric field strength corresponding to each device to be predicted based on the ramp voltage test result, the nominal insulation dielectric layer thickness and the specified voltage may include: Determining the inherent breakdown electric field strength according to the first breakdown voltage and the nominal thickness of the insulating dielectric layer; Determine the thickness of each insulating dielectric layer according to the second breakdown voltage and inherent breakdown electric field strength of each device to be predicted; The breakdown electric field strength corresponding to each device to be predicted is determined according to the specified voltage and the thickness of each insulating dielectric layer.

[0042] In the embodiment of the present application, the ramp voltage test result obtained by performing a ramp voltage test on the insulating dielectric layer in the multiple predicted devices may specifically include the first breakdown voltage when a first preset proportion of the predicted devices in the multiple predicted devices breakdown. And the second breakdown voltage of each device to be predicted ( represents the second breakdown voltage of the i-th device to be predicted). The first preset ratio can be 50%, that is, the first breakdown voltage when half of the devices to be predicted are broken down. Of course, the first preset ratio can also be other values ​​in (0, 100%), for example, 63.2%. The first breakdown voltage of the device to be predicted when the breakdown occurs in the first preset ratio The specific method may be: statistically analyzing the relationship between the breakdown voltage and the cumulative failure percentage, for example Figure 2 As shown, it shows a schematic diagram of the cumulative failure percentage of Vramp provided in the embodiment of the present application, wherein the horizontal axis is , the vertical axis is the cumulative failure percentage ( ), based on the relationship diagram between the breakdown voltage and the cumulative failure percentage, the breakdown voltage corresponding to the first preset ratio is obtained, and the breakdown voltage is determined as the first breakdown voltage. Of course, other methods can also be used to obtain the first breakdown voltage, and the embodiments of the present application are not limited to this.

[0043] On the basis of the above, we can use formula (1) (i.e. the electric field formula): , calculate the electric field strength, where is the breakdown voltage, is the thickness of the device’s insulating dielectric layer, Specifically, the process of determining the breakdown electric field strength corresponding to each device to be predicted according to the ramp voltage test result, the nominal insulation dielectric layer thickness and the specified voltage is as follows: (a) A first breakdown voltage when a device to be predicted breaks down according to a first preset ratio And the nominal insulating dielectric thickness , using formula (2): , calculate the inherent breakdown electric field strength .by for For example, formula (2) is .

[0044] (b) Based on the second breakdown voltage of each device to be predicted , inherent breakdown electric field strength , using formula (3): , corresponding to the calculation of the thickness of the insulating dielectric layer in each device to be predicted ( represents the thickness of the insulating dielectric layer in the i-th device to be predicted).

[0045] (c) According to the specified voltage And the thickness of the insulating dielectric layer in each device to be predicted , using formula (4): , corresponding to the calculation of the breakdown electric field strength of each device to be predicted ( represents the breakdown electric field strength corresponding to the i-th device to be predicted).

[0046] The above method can effectively and accurately calculate the breakdown electric field strength corresponding to each device to be predicted based on the ramp voltage test result, so as to improve the accuracy and efficiency of the TDDB life prediction of the insulating dielectric layer.

[0047] A method for predicting the breakdown lifetime of an insulating dielectric layer over time provided by an embodiment of the present application may further include, before determining the thickness of each insulating dielectric layer according to the second breakdown voltage and the inherent breakdown electric field strength of each device to be predicted: Determine whether there is a device to be predicted whose second breakdown voltage is not greater than the product of the operating voltage of the device to be predicted and a preset coefficient; the preset coefficient is greater than 1; If so, the device to be predicted and its second breakdown voltage are eliminated.

[0048] In the embodiment of the present application, three failure types can be defined when performing a ramp voltage test on the device to be predicted: mode A, mode B, and mode C, and the failure types can be determined based on the operating voltage V of the device to be predicted. dd The breakdown voltage V bd The size relationship between them determines which failure type the device to be predicted belongs to, mode A, mode B, or mode C. Specifically, V bd <V dd The failure type is defined as mode A, V dd ≤V bd ≤p×V dd The failure type is defined as mode B, p is a preset coefficient and p is greater than 1, for example, it can be 2.3 (of course, this value can also be adjusted by analyzing the device, etc.), V bd >p×V ddThe failure type is defined as mode C. It is generally believed that mode A is caused by pinhole defects caused by environmental pollution of the insulating dielectric layer during wafer manufacturing, mode B is caused by defects such as alkaline metal ions such as Na and K or heavy metal ions such as Fe introduced during wafer manufacturing, and mode C is caused by inherent defects of the device material itself, that is, both mode A and mode B can be considered to be caused by the production process, and the breakdown voltage of these two types of failure is very small, which is abnormal, while mode C is a failure caused by the inherent characteristics of the device material itself, and its breakdown voltage is relatively large. Therefore, the failure data of mode C can be used in TDDB life prediction to eliminate mode A and mode B type failed devices.

[0049] On the basis of the above, before determining the thickness of each insulating dielectric layer according to the second breakdown voltage and inherent breakdown electric field strength of each device to be predicted, it is also possible to determine whether there is a device to be predicted whose second breakdown voltage is not greater than the product of the operating voltage of the device to be predicted and a preset coefficient (i.e., the above-mentioned p), where the preset coefficient is greater than 1.

[0050] If the second breakdown voltage of all the devices to be predicted is greater than the product of the operating voltage of the device to be predicted and the preset coefficient, it means that the breakdown of these devices to be predicted during the ramp voltage test is caused by the inherent fault of the device material itself. Therefore, the TDDB life prediction of the insulating dielectric layer in these devices to be predicted is performed based on the ramp voltage test results.

[0051] If there is a device to be predicted whose second breakdown voltage is not greater than the product of the operating voltage of the device to be predicted and the preset coefficient, it means that the breakdown of the corresponding device to be predicted (i.e., the device to be predicted whose second breakdown voltage is not greater than the product of the operating voltage and the preset coefficient) during the ramp voltage test is caused by the production process, rather than by the inherent fault of the device material itself. In order to improve the accuracy of the TDDB life prediction of the insulating dielectric layer, the corresponding device to be predicted and its second breakdown voltage can be eliminated, while the device to be predicted whose second breakdown voltage is greater than the product of the operating voltage and the preset coefficient and its second breakdown voltage are retained, so that the device to be predicted whose second breakdown voltage is greater than the product of the operating voltage and the preset coefficient participates in the TDDB life prediction.

[0052] The above method can eliminate the breakdown caused by the production process in the ramp voltage test, and retain the breakdown caused by the inherent fault of the device material itself, thereby improving the accuracy of the TDDB life prediction of the insulating dielectric layer.

[0053] An embodiment of the present application provides a method for predicting the time-dependent breakdown lifetime of an insulating dielectric layer. When the electric field acceleration model is an E model, the TDDB lifetime of each insulating dielectric layer is determined according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted, which may include: use Determine the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted ; Among them, A and are constants in the E model, is the breakdown electric field strength corresponding to the i-th device to be predicted.

[0054] In the embodiment of the present application, when the electric field acceleration model corresponding to TDDB is the E model, the E model is as shown in formula (5):

[0055] in, is the failure time or lifetime, is a constant, is the electric field strength, is the electric field acceleration factor, is the temperature activation energy, is the Boltzmann constant, is the Weibull shape factor, is the Kelvin temperature, The reference area for the lifetime of the capacitor structure under test, is the area of ​​the capacitor structure being measured, is the Weibull cumulative distribution function. When only the electric field change is considered, the coefficient is set , is a constant, formula (5) is simplified to formula (6):

[0056] Among them, the constants A and Determined using TDDB test results from TDDB tests on historical devices.

[0057] Based on the above, the breakdown electric field strength corresponding to the i-th device to be predicted can be Substituting into formula (6), and using: , calculate the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted (i.e., the TDDB lifetime (or equivalent failure time) of the insulating dielectric layer in the i-th device to be predicted under specified voltage conditions). Specifically, according to the breakdown electric field strength corresponding to the i-th device to be predicted, The calculation method can be obtained: .

[0058] The above method can quickly and effectively determine the TDDB lifetime of the insulating dielectric layer in the device to be predicted when the electric field acceleration model is the E model.

[0059] The embodiment of the present application provides a method for predicting the breakdown life of an insulating dielectric layer over time. When the electric field acceleration model is When developing a model, the TDDB life of each insulating dielectric layer is determined according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted, which may include: use Determine the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted ; Among them, A and Both The constants in the model, is the breakdown electric field strength corresponding to the i-th device to be predicted.

[0060] In the embodiment of the present application, when the electric field acceleration model corresponding to TDDB is When the model The model is shown in formula (7):

[0061] in, is the failure time or lifetime, is a constant, is the electric field factor, is the electric field strength, is the temperature activation energy, is the Boltzmann constant, is the Kelvin temperature, The reference area for the lifetime of the capacitor structure under test, is the area of ​​the capacitor structure being measured, is the Weibull shape factor, is the Weibull cumulative distribution function. When only the electric field change is considered, the coefficient is set , is a constant, formula (7) is simplified to formula (8):

[0062] Among them, the constants A and Determined using TDDB test results from TDDB tests on historical devices.

[0063] Based on the above, the breakdown electric field strength corresponding to the i-th device to be predicted can be Substituting into formula (8), and using: , calculate the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted (i.e., the TDDB lifetime (or equivalent failure time) of the insulating dielectric layer in the i-th device to be predicted under specified voltage conditions). Specifically, according to the breakdown electric field strength corresponding to the i-th device to be predicted, The calculation method can be obtained: .

[0064] The above method can quickly and effectively determine the insulating dielectric layer in the device to be predicted in the electric field acceleration model. TDDB lifetime at model time.

[0065] The embodiment of the present application provides a method for predicting the breakdown life of an insulating dielectric layer over time. When the electric field acceleration model is When developing a model, the TDDB life of each insulating dielectric layer is determined according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted, which may include: use Determine the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted ; Among them, A and Both The constants in the model, is the breakdown electric field strength corresponding to the i-th device to be predicted.

[0066] In the embodiment of the present application, when the electric field acceleration model corresponding to TDDB is When the model The model is shown in formula (9):

[0067] in, is the failure time or lifetime, is a constant, is the electric field acceleration factor, is the electric field strength, is the temperature activation energy, is the Boltzmann constant, is the Kelvin temperature, The reference area for the lifetime of the capacitor structure under test, is the area of ​​the capacitor structure being measured, is the Weibull shape factor, is the Weibull cumulative distribution function. When only the electric field change is considered, , is a constant, formula (9) is simplified to formula (10):

[0068] Among them, the constants A and Determined using TDDB test results from TDDB tests on historical devices.

[0069] Based on the above, the breakdown electric field strength corresponding to the i-th device to be predicted can be Substituting into formula (10), and using: , calculate the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted (i.e., the TDDB lifetime (or equivalent failure time) of the insulating dielectric layer in the i-th device to be predicted under specified voltage conditions). Specifically, according to the breakdown electric field strength corresponding to the i-th device to be predicted, The calculation method can be obtained: .

[0070] The above method can quickly and effectively determine the insulating dielectric layer in the device to be predicted in the electric field acceleration model. TDDB lifetime at model time.

[0071] An embodiment of the present application provides a method for predicting the time-dependent breakdown life of an insulating dielectric layer, which uses the TDDB test results obtained by performing TDDB tests on historical devices to determine constants in an electric field acceleration model, and may include: The electric field acceleration model is logarithmically transformed to obtain a linear expression model between the electric field intensity and the TDDB lifetime; Obtain multiple sets of test data by performing TDDB tests on historical devices, fit a linear expression model based on the multiple sets of test data, and determine constants in the electric field acceleration model; wherein each set of test data may include a test electric field strength and a second preset proportion of the time when historical devices fail under the test electric field strength.

[0072] In the embodiment of the present application, the specific process of determining the constants in the electric field acceleration model using the TDDB test results obtained by performing TDDB tests on historical devices may be: Step 100: Perform logarithmic transformation on the electric field acceleration model to obtain a linear expression model between the electric field intensity and the TDDB lifetime.

[0073] Step 200: Obtain multiple sets of test data by performing TDDB tests on historical devices, each set of test data includes the test electric field strength (that is, the historical devices are tested with the same test electric field strength) and the time when the historical devices fail under the test electric field strength at a second preset ratio. Use multiple sets of test data to perform linear fitting on the linear expression model between electric field strength and TDDB life, and determine the constants in the electric field acceleration model based on the linear fitting results. Among them, the second preset ratio can be 63.2%, that is, each set of test data is (E ox-j , t63 j ), where Eox-j represents the jth test electric field strength, t63 j Representing 63.2% of the historical devices in E ox-j The time at which failure occurs.

[0074] Specifically, for the E model shown in formula (6), taking the logarithm of both sides, we get and electric field The linear expression model between them is given by formula (11): According to formula (11), with the electric field strength E as the horizontal coordinate, the logarithm of TTF is The second preset ratio is 63.2%. The electric field acceleration factor is obtained by fitting the test data under different electric field strengths through the t63 characteristic life data under different electric field strengths. and constant coefficient For example, at the maximum operating temperature of 125°C, three different test electric field strengths Eox are selected for TDDB testing, and the t63 life under each test electric field strength is obtained. According to formula (7), a fitting straight line is drawn as follows: Figure 3 As shown, it shows that the embodiment of the present application provides Schematic diagram of the corresponding fitting straight line, the horizontal axis is the test electric field strength, and the vertical axis is , we get the fitting straight line y = -4.1473x + 43.771, where the slope of the straight line, i.e. the absolute value of the coefficient of x, 4.1473, is the electric field acceleration factor , 43.771 is the logarithm of the constant coefficient A .

[0075] For the formula (8) Model, taking the logarithm of both sides, we get The square root of the electric field The linear expression model between them is given by formula (12): According to formula (12), (i.e. the square root of the electric field strength E) is the horizontal axis, and the logarithm of TTF The second preset ratio is 63.2%. The electric field acceleration factor is obtained by fitting the test data under different electric field strengths through the t63 characteristic life data under different electric field strengths. and constant coefficient These two constants.

[0076] For the formula (10) Model, taking the logarithm of both sides, we get and The linear expression model between them gives formula (13): According to formula (13), with the reciprocal of the electric field strength E, 1 / E, as the horizontal coordinate, the logarithm of TTF is The second preset ratio is 63.2%. The electric field acceleration factor is obtained by fitting the test data under different electric field strengths through the t63 characteristic life data under different electric field strengths. and constant coefficient These two constants.

[0077] The above method can quickly and accurately obtain the constants in the electric field acceleration model, thereby facilitating the rapid and accurate prediction of the TDDB life of the insulating dielectric layer.

[0078] The present application also provides a device for predicting the breakdown life of an insulating dielectric layer over time. Figure 4 , which shows a schematic structural diagram of a device for predicting the time-dependent breakdown life of an insulating dielectric layer provided in an embodiment of the present application, which may include: The test module 41 is used to perform a ramp voltage test on the insulating dielectric layers in the multiple devices to be predicted to obtain the ramp voltage test results; each device to be predicted is manufactured using the same process; A first determination module 42 is used to determine the breakdown electric field strength corresponding to each device to be predicted according to the ramp voltage test result, the nominal insulation dielectric layer thickness and the specified voltage; The second determination module 43 is used to obtain the electric field acceleration model corresponding to the TDDB, and determine the TDDB life of each insulating dielectric layer according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted; the electric field acceleration model includes electric field strength parameters, and the constants in the electric field acceleration model are determined by the TDDB test results obtained by performing TDDB tests on historical devices, and the historical devices and the devices to be predicted are manufactured using the same process.

[0079] An embodiment of the present application provides a device for predicting the breakdown life of an insulating dielectric layer over time, wherein a ramp voltage test result may include a first breakdown voltage when a first preset proportion of the predicted devices breakdown and a second breakdown voltage of each predicted device; The first determination module 42 may include: A first determining unit, configured to determine an inherent breakdown electric field strength according to a first breakdown voltage and a nominal insulating dielectric layer thickness; A second determination unit is used to determine the thickness of each insulating dielectric layer according to the second breakdown voltage and the inherent breakdown electric field strength of each device to be predicted; The third determination unit is used to determine the breakdown electric field strength corresponding to each device to be predicted according to the specified voltage and the thickness of each insulating dielectric layer.

[0080] In an insulating dielectric layer breakdown life prediction device provided in an embodiment of the present application, the first determination module 42 may further include: A judging unit, used for judging whether there is a device to be predicted whose second breakdown voltage is not greater than the product of the working voltage of the device to be predicted and a preset coefficient before determining the thickness of each insulating dielectric layer according to the second breakdown voltage and the inherent breakdown electric field strength of each device to be predicted; the preset coefficient is greater than 1; The elimination unit is used to eliminate the device to be predicted and its second breakdown voltage if the second breakdown voltage of the device to be predicted is not greater than the product of the operating voltage of the device to be predicted and a preset coefficient.

[0081] An embodiment of the present application provides a device for predicting the time-dependent breakdown life of an insulating dielectric layer. When the electric field acceleration model is an E model, the second determination module 43 may include: The fourth determining unit is used to utilize Determine the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted ; Among them, A and are constants in the E model, is the breakdown electric field strength corresponding to the i-th device to be predicted.

[0082] The embodiment of the present application provides a device for predicting the breakdown life of an insulating dielectric layer over time. When the electric field acceleration model is When the model is used, the second determining module 43 may include: A fifth determining unit is used to utilize Determine the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted ; Among them, A and All of the above The constants in the model, is the breakdown electric field strength corresponding to the i-th device to be predicted.

[0083] The embodiment of the present application provides a device for predicting the breakdown life of an insulating dielectric layer over time. When the electric field acceleration model is When the model is used, the second determining module 43 may include: A sixth determining unit is used to utilize Determine the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted ; Among them, A and All of the above The constants in the model, is the breakdown electric field strength corresponding to the i-th device to be predicted.

[0084] An insulating dielectric layer breakdown life prediction device provided by an embodiment of the present application further includes a third determination module for determining constants in an electric field acceleration model using TDDB test results obtained by performing TDDB tests on historical devices, and the third determination module may include: A logarithmic transformation unit is used to perform logarithmic transformation on the electric field acceleration model to obtain a linear expression model between the electric field intensity and the TDDB life; A fitting determination unit is used to obtain multiple sets of test data obtained by performing TDDB tests on historical devices, fit the linear expression model according to the multiple sets of test data, and determine the constants in the electric field acceleration model; wherein each set of test data may include the test electric field strength and the time when a second preset proportion of historical devices fail under the test electric field strength.

[0085] The present application also provides a device for predicting the breakdown life of an insulating dielectric layer over time. Figure 5 , which shows a schematic structural diagram of an insulating dielectric layer time-dependent breakdown life prediction device provided in an embodiment of the present application, which may include: A memory 51, used for storing computer programs; The processor 52, when used to execute the computer program stored in the memory 51, can implement the following steps: A ramp voltage test is performed on the insulating dielectric layers in multiple devices to be predicted to obtain a ramp voltage test result; each device to be predicted is prepared using the same process; the breakdown electric field strength corresponding to each device to be predicted is determined based on the ramp voltage test result, the nominal insulating dielectric layer thickness and the specified voltage; an electric field acceleration model corresponding to TDDB is obtained, and the TDDB life of each insulating dielectric layer is determined based on the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted; the electric field acceleration model includes electric field strength parameters, and the constants in the electric field acceleration model are determined using the TDDB test results obtained by performing TDDB tests on historical devices, and the historical devices and the devices to be predicted are prepared using the same process.

[0086] The present application also provides a readable storage medium, in which a computer program is stored. When the computer program is executed by a processor, the following steps can be implemented: A ramp voltage test is performed on the insulating dielectric layers in multiple devices to be predicted to obtain a ramp voltage test result; each device to be predicted is prepared using the same process; the breakdown electric field strength corresponding to each device to be predicted is determined based on the ramp voltage test result, the nominal insulating dielectric layer thickness and the specified voltage; an electric field acceleration model corresponding to TDDB is obtained, and the TDDB life of each insulating dielectric layer is determined based on the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted; the electric field acceleration model includes electric field strength parameters, and the constants in the electric field acceleration model are determined using the TDDB test results obtained by performing TDDB tests on historical devices, and the historical devices and the devices to be predicted are prepared using the same process.

[0087] The description of the relevant parts of the device, equipment and readable storage medium for predicting the breakdown lifetime of an insulating dielectric layer over time provided in the embodiments of the present application can be found in the detailed description of the corresponding parts of the method for predicting the breakdown lifetime of an insulating dielectric layer over time provided in the embodiments of the present application, and will not be repeated here.

[0088] It should be noted that the logic and / or steps represented in the flowchart or described in other ways herein, for example, can be considered as a sequenced list of executable instructions for implementing logical functions, and can be specifically implemented in any computer-readable medium for use by an instruction execution system, device or equipment (such as a computer-based system, a system including a processor, or other system that can fetch instructions from an instruction execution system, device or equipment and execute instructions), or in combination with these instruction execution systems, devices or equipment. For the purpose of this specification, "computer-readable medium" can be any device that can contain, store, communicate, propagate or transmit a program for use by an instruction execution system, device or equipment, or in combination with these instruction execution systems, devices or equipment. More specific examples (non-exhaustive list) of computer-readable media include the following: an electrical connection portion with one or more wirings (electronic device), a portable computer disk box (magnetic device), a random access memory (RAM), a read-only memory (ROM), an erasable and editable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disk read-only memory (CDROM). In addition, the computer-readable medium may even be paper or other suitable medium on which the program is printed, since the program may be obtained electronically, for example, by optically scanning the paper or other medium and then editing, interpreting or processing in other suitable ways if necessary, and then stored in a computer memory.

[0089] It should be understood that the various parts of the present application can be implemented by hardware, software, firmware or a combination thereof. In the above-mentioned embodiments, multiple steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented by hardware, as in another embodiment, it can be implemented by any one of the following technologies known in the art or their combination: a discrete logic circuit having a logic gate circuit for implementing a logic function for a data signal, a dedicated integrated circuit having a suitable combination of logic gate circuits, a programmable gate array (PGA), a field programmable gate array (FPGA), etc.

[0090] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0091] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0092] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0093] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application.

Claims

1. A method for predicting the breakdown life of an insulating dielectric layer over time, characterized in that: include: Performing a ramp voltage test on the insulating dielectric layers in a plurality of devices to be predicted to obtain a ramp voltage test result; each of the devices to be predicted is prepared using the same process; Determine the breakdown electric field strength corresponding to each of the components to be predicted according to the ramp voltage test result, the nominal insulating dielectric layer thickness and the specified voltage; Obtain an electric field acceleration model corresponding to TDDB, and determine the TDDB life of each insulating dielectric layer according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted; the electric field acceleration model includes electric field strength parameters, and the constants in the electric field acceleration model are determined by using the TDDB test results obtained by performing TDDB tests on historical devices, and the historical devices and the devices to be predicted are prepared using the same process.

2. The method for predicting the time-dependent breakdown life of an insulating dielectric layer according to claim 1, characterized in that: The ramp voltage test result includes a first breakdown voltage of a first preset ratio of the devices to be predicted when breakdown occurs and a second breakdown voltage of each of the devices to be predicted; Determining the breakdown electric field strength corresponding to each of the components to be predicted according to the ramp voltage test result, the nominal insulating dielectric layer thickness and the specified voltage, including: Determining an inherent breakdown electric field strength according to the first breakdown voltage and the nominal insulating dielectric layer thickness; Determine the thickness of each of the insulating dielectric layers according to the second breakdown voltage of each of the devices to be predicted and the inherent breakdown electric field strength; The breakdown electric field strength corresponding to each of the components to be predicted is determined according to the specified voltage and the thickness of each of the insulating dielectric layers.

3. The method for predicting the time-dependent breakdown life of an insulating dielectric layer according to claim 2, characterized in that: Before determining the thickness of each insulating dielectric layer according to the second breakdown voltage of each device to be predicted and the inherent breakdown electric field strength, the method further includes: Determine whether there is a second breakdown voltage of the device to be predicted that is not greater than the product of the operating voltage of the device to be predicted and a preset coefficient; the preset coefficient is greater than 1; If so, the device to be predicted and its second breakdown voltage are eliminated.

4. The method for predicting the time-dependent breakdown life of an insulating dielectric layer according to claim 1, characterized in that: When the electric field acceleration model is the E model, the TDDB life of each of the insulating dielectric layers is determined according to the electric field acceleration model and the breakdown electric field strength corresponding to each of the components to be predicted, including: use Determine the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted ; Among them, A and are constants in the E model, is the breakdown electric field strength corresponding to the i-th device to be predicted.

5. The method for predicting the time-dependent breakdown life of an insulating dielectric layer according to claim 1, characterized in that: When the electric field acceleration model is When the model is used, the TDDB life of each insulating dielectric layer is determined according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted, including: use Determine the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted ; Among them, A and All of the above The constants in the model, is the breakdown electric field strength corresponding to the i-th device to be predicted.

6. The method for predicting the time-dependent breakdown life of an insulating dielectric layer according to claim 1, characterized in that: When the electric field acceleration model is When the model is used, the TDDB life of each insulating dielectric layer is determined according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted, including: use Determine the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted ; Among them, A and All of the above The constants in the model, is the breakdown electric field strength corresponding to the i-th device to be predicted.

7. The method for predicting the time-dependent breakdown life of an insulating dielectric layer according to any one of claims 4 to 6, characterized in that: The constants in the electric field acceleration model are determined using the TDDB test results obtained by performing TDDB tests on historical devices, including: Performing logarithmic transformation on the electric field acceleration model to obtain a linear expression model between electric field intensity and TDDB lifespan; Obtain multiple groups of test data by performing TDDB tests on the historical device, fit the linear expression model according to the multiple groups of test data, and determine the constants in the electric field acceleration model; wherein each group of the test data includes a test electric field strength and a second preset proportion of the time when the historical device fails under the test electric field strength.

8. A device for predicting the time-dependent breakdown life of an insulating dielectric layer, characterized in that: include: A test module, used for performing a ramp voltage test on the insulating dielectric layers in the plurality of devices to be predicted, and obtaining a ramp voltage test result; Each of the devices to be predicted is prepared by the same process; A first determination module is used to determine the breakdown electric field strength corresponding to each of the components to be predicted according to the ramp voltage test result, the nominal insulation dielectric layer thickness and the specified voltage; The second determination module is used to obtain the electric field acceleration model corresponding to TDDB, and determine the TDDB life of each insulating dielectric layer according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted; the electric field acceleration model includes electric field strength parameters, and the constants in the electric field acceleration model are determined by using the TDDB test results obtained by performing TDDB tests on historical devices, and the historical devices and the devices to be predicted are prepared using the same process.

9. An insulating dielectric layer breakdown life prediction device, characterized in that: include: Memory for storing computer programs; A processor is used to implement the steps of the method for predicting the time-dependent breakdown life of an insulating dielectric layer as described in any one of claims 1 to 7 when executing the computer program.

10. A readable storage medium, characterized in that: The readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the method for predicting the time-dependent breakdown life of an insulating dielectric layer according to any one of claims 1 to 7 are implemented.

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