Etching method and device for heating film

Abstract

The present invention provides a method and device for etching a heating film. The method comprises: obtaining application requirement data for the heating film; determining target resistance value data based on the application requirement data for the heating film; determining target material data based on the target resistance value data; determining a target laser etching pattern and target laser etching parameters based on the target resistance value data and the target material data; etching the target material according to the target laser etching pattern and the target laser etching parameters to obtain a heating element; and welding the heating element to a heating film according to preset welding parameters to obtain a target heating film. The present invention can not only improve the accuracy of laser etching parameters, but also improve the quality and performance of the final product.

Description

Technical Field

[0001] The present invention relates to the technical field of heating films, and also to an etching method and device for heating films. Background Art

[0002] Heating films are planar heating elements composed of an electrically insulating material encapsulated with a heating resistor. To ensure the required resistance of the heating film, the size and shape of the metal foil and wire on the film must be precisely controlled. However, existing etching processes often struggle to precisely control chemical reactions or process parameters, resulting in resistance values failing to meet design requirements. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to provide an etching method and device for a heating film to improve the accuracy of the resistance value of the heating film.

[0004] In order to solve the above technical problems, the technical solutions of the present invention are as follows:

[0005] A first aspect of the present invention provides an etching method for a heat-generating film, comprising:

[0006] Obtain application demand data for heating films;

[0007] Determining target resistance value data according to application requirement data of the heating film;

[0008] Determining target material data according to the target resistance value data;

[0009] determining a target laser etching pattern and target laser etching parameters according to the target resistance value data and the target material data;

[0010] Etching the target material according to the target laser etching pattern and the target laser etching parameters to obtain a heating element;

[0011] The heating element is welded to the heating film according to preset welding parameters to obtain the target heating film.

[0012] Optionally, obtain application requirement data for the heating film, including:

[0013] Acquiring usage scenario data of the heating film; the usage scenario data of the heating film includes at least one of a heating element, a temperature sensor, and a thermistor;

[0014] Acquiring performance data of the heating film; the performance data of the heating film includes target heating power and target operating voltage;

[0015] According to the usage scenario data of the heating film and the performance data of the heating film, application demand data of the heating film is obtained.

[0016] Optionally, determining target resistance data according to application requirement data of the heating film includes:

[0017] According to the application demand data of the heating film and , get the original resistance value;

[0018] Optimizing the original resistance value according to a preset optimization threshold to obtain target resistance value data;

[0019] Where R is the original resistance value, V is the target operating voltage, and P is the target heating power.

[0020] Optionally, determining target material data according to the target resistance value data includes:

[0021] Obtaining heating material data according to the target resistance value data, pre-stored heating material data, and preset screening conditions;

[0022] Target material data is determined based on the target resistance value data and the heat-generating material data.

[0023] Optionally, determining a target laser etching pattern according to the target resistance value data and the target material data includes:

[0024] Obtain a preset laser etching pattern;

[0025] determining pattern adjustment parameters according to the preset laser etching pattern, the target resistance value data, and the target material data;

[0026] According to the pattern adjustment parameters, a target laser etching pattern is determined.

[0027] Optionally, determining target laser etching parameters according to the target resistance value data and the target material data includes:

[0028] Inputting the target resistance value data, the target material data and the preset laser etching parameters into a preset parameter model to obtain a parameter simulation result;

[0029] The preset laser etching parameters are adjusted according to the target resistance value data and the parameter simulation results to obtain target laser etching parameters.

[0030] Optionally, etching the target material according to the target laser etching pattern and the target laser etching parameters to obtain the heating element includes:

[0031] Get the target format;

[0032] Performing format conversion on the target laser etching pattern and the target laser etching parameters according to the target format to obtain control parameters;

[0033] The control parameters are input into a laser etching device, so that the laser etching device etches the target material according to the control parameters to obtain a heating element.

[0034] A second aspect of the present invention provides an etching device for a heating film, comprising:

[0035] An acquisition module is used to obtain application demand data of the heating film;

[0036] A processing module is used to determine target resistance value data based on application requirement data of the heating film; determine target material data based on the target resistance value data; determine a target laser etching pattern and target laser etching parameters based on the target resistance value data and the target material data; etch the target material according to the target laser etching pattern and the target laser etching parameters to obtain a heating element; and weld the heating element to a heating film according to preset welding parameters to obtain a target heating film.

[0037] According to a third aspect of the present invention, a computing device is provided, comprising: a processor and a memory storing a computer program, wherein when the computer program is executed by the processor, the method according to the first aspect is executed.

[0038] A fourth aspect of the present invention provides a computer-readable storage medium storing instructions, which, when executed on a computer, causes the computer to execute the method described in the first aspect.

[0039] The above solution of the present invention includes at least the following beneficial effects:

[0040] The above-mentioned scheme of the present invention obtains the application requirement data of the heating film, determines the target resistance value data, and then determines the target material data and the target laser etching pattern and target laser etching parameters, and etches the target material according to the target laser etching pattern and target laser etching parameters to obtain a heating element. Finally, the heating element is welded to the heating film according to the preset welding parameters to obtain the target heating film, which can not only improve the accuracy of the laser etching parameters, but also improve the quality and performance of the final product. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 1 is a schematic flow chart of an etching method for a heating film in an embodiment of the present invention;

[0042] Figure 2 Schematic diagram of the structure of an etching device for a heating film in an embodiment of the present invention. DETAILED DESCRIPTION

[0043] Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided to enable a more thorough understanding of the present invention and to fully convey the scope of the present invention to those skilled in the art.

[0044] like Figure 1 As shown, an embodiment of the present invention provides an etching method for a heat-generating film, comprising the following steps:

[0045] Step 101, obtaining application demand data of the heating film;

[0046] Step 102, determining target resistance value data according to application requirement data of the heating film;

[0047] Step 103, determining target material data according to the target resistance value data;

[0048] Step 104, determining a target laser etching pattern and target laser etching parameters based on the target resistance value data and the target material data;

[0049] Step 105, etching the target material according to the target laser etching pattern and the target laser etching parameters to obtain a heating element;

[0050] Step 106: Weld the heating element onto the heating film according to preset welding parameters to obtain a target heating film.

[0051] The etching method for a heating film according to an embodiment of the present invention obtains application requirement data of the heating film, determines target resistance value data, and further determines target material data, target laser etching pattern, and target laser etching parameters. The target material is etched according to the target laser etching pattern and target laser etching parameters to obtain a heating element. Finally, the heating element is welded to the heating film according to preset welding parameters to obtain a target heating film. This method can not only improve the accuracy of the laser etching parameters, but also improve the quality and performance of the final product.

[0052] In an optional embodiment of the present invention, step 101 includes:

[0053] Step 1011, obtaining usage scenario data of the heating film; the usage scenario data of the heating film includes at least one of a heating element, a temperature sensor, and a thermistor;

[0054] Specifically, heating film, as a highly efficient heating element, has a wide range of applications in multiple fields due to its energy-saving, environmentally friendly, and easy-to-control characteristics. However, in different application scenarios, the required heating effect and stability vary, and the required resistor materials for heating film may vary, such as metal foil, metal wire, carbon film, ceramic film, etc.; therefore, it is necessary to obtain data on the use scenarios of heating film so that the resistor material of the heating film can be determined based on this data. The heating elements, temperature sensors, or thermistors listed in this embodiment are only examples, and different use scenarios can also be selected according to actual needs.

[0055] Step 1012: Acquire performance data of the heating film; the performance data of the heating film includes target heating power and target operating voltage;

[0056] Specifically, the performance data of the heating film can include target heating power, target operating voltage, target temperature range, target response time, etc. This data facilitates the subsequent determination of the required resistance value of the heating film. The required target heating power and target operating voltage can be calculated based on the specific heating requirements of the application scenario, such as the required indoor temperature and the heating area, or the user can directly provide the performance data of the heating film.

[0057] Step 1013: Obtain application requirement data of the heating film according to the usage scenario data of the heating film and the performance data of the heating film.

[0058] Specifically, the application demand data of the heating film includes the usage scenario data of the heating film and the performance data of the heating film.

[0059] In an optional embodiment of the present invention, step 102 includes:

[0060] Step 1021, according to the application demand data of the heating film and , get the original resistance value; where R is the original resistance value, V is the target operating voltage, and P is the target heating power;

[0061] Specifically, based on the application demand data of the heating film, suitable resistor materials can be selected, such as any of metal foil, metal wire, carbon film, and ceramic film. For example, for scenarios that require rapid heating and high temperature control accuracy, such as home floor heating and public leisure and entertainment areas, resistor materials with high resistivity, good thermal stability, and high temperature resistance can be selected; for scenarios such as heating mechanical equipment in the industrial field or agricultural greenhouses, the cost-effectiveness and long-term stability of the materials need to be considered; considering factors such as the humidity and corrosiveness of the environment in which the heating film is located, resistor materials with corresponding corrosion resistance or waterproof properties also need to be selected. Here, the target operating voltage and target heating power can be directly extracted from the application demand data of the heating film.

[0062] Step 1022 : Optimize the original resistance value according to a preset optimization threshold to obtain target resistance value data.

[0063] Specifically, considering the influence of factors such as ambient temperature, humidity, and airflow on the resistance value, the calculated original resistance value needs to be appropriately adjusted according to the actual situation. The preset optimization threshold is the range for optimizing the original resistance value. For example, a specific preset optimization threshold is , the original resistance value can be optimized to the original resistance value minus 10% of the original resistance value to the original resistance value plus 10% of the original resistance value. In a specific embodiment, the original resistance value is 11.52Ω, and the preset optimization threshold is , the target resistance value data is approximately 10.37Ω to 12.67Ω.

[0064] In an optional embodiment of the present invention, step 103 includes:

[0065] Step 1031, obtaining heating material data according to the target resistance value data, pre-stored heating material data and preset screening conditions;

[0066] Specifically, as shown in Table 1, the pre-stored heating material data may include material, resistivity, cost, conductivity, thermal conductivity, corrosion resistance, etc. It should be noted that Table 1 is only an example. In actual embodiments, resistivity, cost, conductivity, thermal conductivity, corrosion resistance, etc. can also be represented by specific numerical values; preset screening conditions may include material, resistivity, cost, conductivity, thermal conductivity, corrosion resistance, etc. In actual applications, the corresponding material can be selected from the pre-stored heating material data according to the preset screening conditions, which not only meets user needs, but also can quickly select the appropriate material, saving time and improving production efficiency. Then, based on the target resistance value data and the resistivity of the selected material, the size (such as length, width, thickness) and shape of the required material are calculated. Here, the formula Calculate the length and cross-sectional area of the material, where R is the target resistance value. Here, the heating material data may include material, resistivity, cost, electrical conductivity, thermal conductivity, corrosion resistance, etc., as well as the material size (such as length, width, thickness) and shape.

[0067] Table 1 Pre-stored heating material data

[0068] Material Resistivity Conductivity Thermal conductivity Corrosion resistance cost Nichrome Higher good Moderate powerful medium to high Iron-chromium-aluminum alloy Higher excellent high powerful Medium-low Copper-nickel alloy Higher good medium to high Strong medium Molybdenum alloy Very high excellent Moderate Very strong high

[0069] Step 1032: Determine target material data based on the target resistance value data and the heating material data.

[0070] Specifically, the target material data may include target resistance value data and heat generating material data.

[0071] In an optional embodiment of the present invention, determining a target laser etching pattern according to the target resistance value data and the target material data in step 104 includes:

[0072] Step 1041, obtaining a preset laser etching pattern;

[0073] Specifically, the preset laser etching pattern can be determined according to the material and target resistance value of the selected target material. For example, if the material of the selected target material is copper, its resistivity is , the target resistance value is 10Ω, and the preset laser etching pattern can be set to a thin and long metal wire. According to the actual situation, the preset laser etching pattern can be selected.

[0074] Step 1042, determining pattern adjustment parameters according to the preset laser etching pattern, the target resistance value data, and the target material data;

[0075] Specifically, the resistivity can be obtained according to the target material data, the length and cross-sectional area can be obtained according to the preset laser etching pattern, and the , the resistance value in the pattern can be calculated, where is the resistance value in the pattern, is the resistivity, L is the length, and A is the cross-sectional area. By comparing the resistance values in the pattern The difference between the target resistance value R and the target resistance value data can be obtained, and then the resistance value in the pattern can be adjusted by adjusting the length and cross-sectional area of the preset laser etching pattern. If the resistance value R is close to or equal to the target resistance value R in the target resistance value data, then the length and cross-sectional area of the preset laser etching pattern are the pattern adjustment parameters.

[0076] Step 1043 : determining a target laser etching pattern according to the pattern adjustment parameters.

[0077] Specifically, the length and cross-sectional area of the preset laser etching pattern are modified according to the length and cross-sectional area in the pattern adjustment parameters, so that the length in the preset laser etching pattern is equal to the length in the pattern adjustment parameters, and the cross-sectional area in the preset laser etching pattern is equal to the cross-sectional area in the pattern adjustment parameters. In this way, the target material is etched according to the target laser etching pattern to obtain the target resistance value in the target resistance value data.

[0078] In an optional embodiment of the present invention, determining target laser etching parameters according to the target resistance value data and the target material data in step 104 includes:

[0079] Step 1044 , inputting the target resistance value data, the target material data, and the preset laser etching parameters into a preset parameter model to obtain parameter simulation results;

[0080] Specifically, the preset parameter model may include:

[0081]

[0082]

[0083]

[0084]

[0085] in, is the resistance value after etching, is the resistivity, is the length after etching, is the cross-sectional area after etching, E is the laser energy density (energy input per unit area), P is the laser power, is the spot area (related to the spot size), v is the scanning speed, h is the etching depth, k is the preset coefficient, d is the spot diameter, is the cross-sectional area of the etched region, and w is the width of the etched region.

[0086] Here, the preset laser etching parameters may include the length after etching, the cross-sectional area after etching, the laser energy density, the spot area, the etching depth, the preset coefficient, the cross-sectional area of the etching area, and the width of the etching area. Based on the above preset parameter model, simulation results of various parameters such as the laser etching power, scanning speed, and spot diameter can be obtained. Here, the parameter simulation results include the laser etching power (laser power), scanning speed, and spot diameter.

[0087] Step 1045 : Adjust the preset laser etching parameters according to the target resistance value data and the parameter simulation result to obtain target laser etching parameters.

[0088] Specifically, the selected material can be simulated and etched according to the various simulation parameters in the parameter simulation results to obtain a simulated etching resistance value, and the simulated etching resistance value can be compared with the resistance value in the target resistance value data. If the simulated etching resistance value is close to or the same as the resistance value in the target resistance value data, then the various simulation parameters in the parameter simulation results can be used as target laser etching parameters for etching the target material. Otherwise, it is necessary to adjust the preset laser etching parameters, and then obtain the parameter simulation results according to the preset parameter model, and then compare the simulated etching resistance value with the resistance value in the target resistance value data until the simulated etching resistance value is equal to the resistance value in the target resistance value data. By adjusting the preset laser etching parameters, the final resistance value after etching can be made the same as the target resistance value, which is beneficial to improving the quality of the heating film. Here, the method of adjusting the preset laser etching parameters includes:

[0089] If the simulated etching resistance value is smaller than the resistance value in the target resistance value data, the cross-sectional area after etching in the preset laser etching parameters may be reduced or the length after etching may be increased.

[0090] The spot area can be changed by adjusting the focal length of the laser or the beam shaping device, or by ; Adjust the spot area, where is the spot area, is pi, approximately 3.14, and D is the diameter of the laser beam;

[0091] pass Adjust the laser energy density in the preset laser etching parameters; where E is the laser energy density and P is the laser power. is the spot area.

[0092] The etching depth can be controlled by adjusting the laser scanning speed, pulse width and laser energy density;

[0093] By increasing the preset coefficient to reduce the etching length or increase the etching cross-sectional area, the resistance value is increased;

[0094] The width and cross-sectional area of the etched area are controlled by adjusting the scanning path and spot size of the laser.

[0095] In an optional embodiment of the present invention, step 105 includes:

[0096] Step 1051, obtaining the target format;

[0097] Specifically, different laser etching devices may be able to recognize different formats. Therefore, it is necessary to determine the corresponding target format based on the laser etching device actually used. The target format may include a laser etching pattern format and an etching parameter format.

[0098] Step 1052, converting the target laser etching pattern and the target laser etching parameters according to the target format to obtain control parameters;

[0099] Specifically, the target laser etching pattern and target laser etching parameters are converted into control parameters that can be recognized by the laser etching equipment according to the target format, which facilitates the subsequent laser etching equipment to etch the target material according to the target laser etching pattern and target laser etching parameters, thereby improving production efficiency.

[0100] Step 1053: input the control parameters into the laser etching equipment, so that the laser etching equipment etches the target material according to the control parameters to obtain a heating element.

[0101] Specifically, during the etching process, the etching progress and effect can be monitored, and abnormal situations such as uneven etching and over-etching can be discovered and handled in a timely manner to ensure the final etching effect.

[0102] Here, after the target material is etched, the original heating element is obtained. A high-precision resistance tester is used to test the resistance value of the original heating element. According to the test results, the target laser etching pattern and target laser etching parameters are adjusted to ensure that the resistance value of the original heating element reaches the target resistance value. If the resistance value of the original heating element reaches the target resistance value, then the original heating element is the final required heating element.

[0103] In an optional embodiment of the present invention, step 106 includes:

[0104] Step 1061, pre-processing the heating element to obtain a pre-processed heating element;

[0105] Specifically, the heating element may be cleaned to ensure that the surface of the heating element is clean and free of impurities such as oil, dust, etc., so as to avoid affecting the subsequent welding effect.

[0106] Step 1062 , welding the pre-treated heating element onto the heating film according to preset welding parameters to obtain a target heating film.

[0107] Specifically, the preset welding parameters may include: welding temperature (150 to 300°C), welding time (5 seconds to 6 minutes), welding pressure (0.1 MPa to 1 MPa), welding speed (1.6 m / min to 4.8 m / min), etc. Based on the actual welding equipment selected, such as a hot plate welder, hot air welder, infrared welder, or pulse welder, the preset welding parameters can be adjusted to ensure the welding effect. The pre-treated heating element is placed at the preset position of the heating film. A clamp or positioning device is used to ensure that the heating element does not move during the welding process. The welding equipment is used to weld according to the preset welding parameters and the heating element is fixed to the heating film. After welding is completed, the heating film and the heating element are naturally cooled or forced to cool to room temperature to obtain the target heating film.

[0108] A specific embodiment of the etching method for a heat-generating film according to an embodiment of the present invention includes:

[0109] Step 111, obtaining application demand data of the heating film;

[0110] The application requirement data of the heating film includes the usage scenario data of the heating film and the performance data of the heating film, which are used to subsequently determine the target resistance value and target material data.

[0111] Step 112, determining target resistance value data;

[0112] First, the original resistance value is calculated, and then the original resistance value is optimized according to a preset optimization threshold to obtain target resistance value data. The target resistance value data can be a range.

[0113] Step 113, determining target material data;

[0114] According to the preset screening conditions, the corresponding material is selected from the pre-stored heating material data to meet user needs, save time in material selection and improve production efficiency.

[0115] Step 114, determining a target laser etching pattern and target laser etching parameters;

[0116] According to the material and target resistance value of the target material, you can arbitrarily select a preset laser etching pattern, calculate the resistance value of the preset laser etching pattern, and then calculate the resistance value of the pattern according to the resistance value of the pattern. Based on the comparison result with the target resistance value R in the target resistance value data, the length and cross-sectional area of the material in the preset laser etching pattern are adjusted to obtain the target laser etching pattern.

[0117] According to the preset parameter model, the parameter simulation result is obtained, and then the simulated etching resistance value is compared with the resistance value in the target resistance value data until the simulated etching resistance value is equal to the resistance value in the target resistance value data, thereby obtaining the target laser etching parameter.

[0118] Step 115, etching process;

[0119] The target laser etching pattern and target laser etching parameters are converted into control parameters that can be recognized by the laser etching equipment according to the target format, so that the laser etching equipment etches the target material according to the control parameters to obtain a heating element. If the resistance value of the heating element reaches the target resistance value, the heating element is a qualified product and can be subsequently welded.

[0120] Step 116, welding process.

[0121] The cleaned heating element is welded to the heating film according to the preset welding parameters to obtain the target heating film.

[0122] The etching method for a heating film according to an embodiment of the present invention obtains a qualified heating element by etching a target material, thereby obtaining a high-quality heating film, which is beneficial to improving the production efficiency of the heating film and reducing the cost.

[0123] like Figure 2 As shown, an embodiment of the present invention provides an etching device 200 for a heat-generating film, comprising:

[0124] An acquisition module 201 is used to acquire application demand data of the heating film;

[0125] The processing module 202 is used to determine the target resistance value data based on the application requirement data of the heating film; determine the target material data based on the target resistance value data; determine the target laser etching pattern and target laser etching parameters based on the target resistance value data and the target material data; etch the target material according to the target laser etching pattern and the target laser etching parameters to obtain a heating element; and weld the heating element to the heating film according to preset welding parameters to obtain a target heating film.

[0126] Optionally, obtain application requirement data for the heating film, including:

[0127] Acquiring usage scenario data of the heating film; the usage scenario data of the heating film includes at least one of a heating element, a temperature sensor, and a thermistor;

[0128] Acquiring performance data of the heating film; the performance data of the heating film includes target heating power and target operating voltage;

[0129] According to the usage scenario data of the heating film and the performance data of the heating film, application demand data of the heating film is obtained.

[0130] Optionally, determining target resistance data according to application requirement data of the heating film includes:

[0131] According to the application demand data of the heating film and , get the original resistance value;

[0132] Optimizing the original resistance value according to a preset optimization threshold to obtain target resistance value data;

[0133] Where R is the original resistance value, V is the target operating voltage, and P is the target heating power.

[0134] Optionally, determining target material data according to the target resistance value data includes:

[0135] Obtaining heating material data according to the target resistance value data, pre-stored heating material data, and preset screening conditions;

[0136] Target material data is determined based on the target resistance value data and the heat-generating material data.

[0137] Optionally, determining a target laser etching pattern according to the target resistance value data and the target material data includes:

[0138] Obtain a preset laser etching pattern;

[0139] determining pattern adjustment parameters according to the preset laser etching pattern, the target resistance value data, and the target material data;

[0140] According to the pattern adjustment parameters, a target laser etching pattern is determined.

[0141] Optionally, determining target laser etching parameters according to the target resistance value data and the target material data includes:

[0142] Inputting the target resistance value data, the target material data and the preset laser etching parameters into a preset parameter model to obtain a parameter simulation result;

[0143] The preset laser etching parameters are adjusted according to the target resistance value data and the parameter simulation results to obtain target laser etching parameters.

[0144] Optionally, etching the target material according to the target laser etching pattern and the target laser etching parameters to obtain the heating element includes:

[0145] Get the target format;

[0146] Performing format conversion on the target laser etching pattern and the target laser etching parameters according to the target format to obtain control parameters;

[0147] The control parameters are input into a laser etching device, so that the laser etching device etches the target material according to the control parameters to obtain a heating element.

[0148] The etching device for the heating film of the embodiment of the present invention obtains the application requirement data of the heating film, determines the target resistance value data, and then determines the target material data and the target laser etching pattern and target laser etching parameters, and etches the target material according to the target laser etching pattern and target laser etching parameters to obtain a heating element. Finally, the heating element is welded to the heating film according to preset welding parameters to obtain a target heating film, which can not only improve the accuracy of the laser etching parameters, but also improve the quality and performance of the final product.

[0149] It should be noted that the device is a device corresponding to the above method, and all implementations in the above method embodiment are applicable to the embodiment of the device and can achieve the same technical effects, which will not be described in detail in this embodiment.

[0150] An embodiment of the present invention further provides a computing device comprising: a processor and a memory storing a computer program. When the computer program is executed by the processor, the computer program performs the method described in any of the above embodiments. All implementations in the above method embodiments are applicable to the embodiments of this device and can achieve the same technical effects. These are not further described in this embodiment.

[0151] An embodiment of the present invention further provides a computer-readable storage medium storing instructions that, when executed on a computer, cause the computer to perform the method described in any of the above embodiments. All implementations in the above method embodiments are applicable to the embodiments of the device and can achieve the same technical effects. These are not further described in this embodiment.

[0152] It should be noted that, in the apparatus and method of the present invention, it is apparent that each component or step can be decomposed and / or recombined. Such decomposition and / or recombination should be considered equivalent solutions of the present invention. Furthermore, the steps of performing the above series of processes can naturally be performed in chronological order according to the order described, but do not necessarily need to be performed in chronological order. Certain steps can be performed in parallel, interleaved, or independently of each other.

[0153] It should be noted that, in the above embodiments, the terms "comprise", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the presence of other identical elements in the process, method, article or device comprising the element. In addition, it should be pointed out that the scope of the methods and devices in the implementation methods of the above embodiments is not limited to performing functions in the order shown or discussed, and may also include performing functions in a substantially simultaneous manner or in the opposite order according to the functions involved. For example, the described method may be performed in an order different from that described, and various steps may also be added, omitted, or combined. In addition, the features described with reference to certain examples may be combined in other examples.

[0154] The above is a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as within the scope of protection of the present invention.

Claims

1. An etching method for a heating film, characterized in that: include: Obtain application demand data for heating films; Determining target resistance value data according to application requirement data of the heating film; Determining target material data according to the target resistance value data; determining a target laser etching pattern and target laser etching parameters according to the target resistance value data and the target material data; Etching the target material according to the target laser etching pattern and the target laser etching parameters to obtain a heating element; Welding the heating element onto the heating film according to preset welding parameters to obtain a target heating film; Wherein, determining the target resistance value data according to the application requirement data of the heating film includes: According to the application demand data of the heating film and , get the original resistance value; The original resistance value is optimized according to the preset optimization threshold to obtain the target resistance value data; wherein the preset optimization threshold is , optimizing the original resistance value to the original resistance value minus 10% of the original resistance value to the original resistance value plus 10% of the original resistance value; Where R is the original resistance value, V is the target operating voltage, and P is the target heating power; Wherein, determining a target laser etching pattern according to the target resistance value data and the target material data includes: Obtain a preset laser etching pattern; According to the preset laser etching pattern, the target resistance value data and the target material data, the pattern adjustment parameters are determined; wherein the resistivity is obtained according to the target material data, the length and cross-sectional area are obtained according to the preset laser etching pattern, and the , calculate the resistance value in the pattern, where is the resistance value in the pattern, is the resistivity, L is the length, and A is the cross-sectional area; by comparing the resistance value in the pattern with the target resistance value in the target resistance value data, the difference between the two is obtained, and by adjusting the length and cross-sectional area in the preset laser etching pattern, the resistance value in the pattern is close to or equal to the target resistance value in the target resistance value data. At this time, the length and cross-sectional area in the preset laser etching pattern are pattern adjustment parameters; According to the pattern adjustment parameters, a target laser etching pattern is determined.

2. An etching device for a heating film, characterized in that: include: An acquisition module is used to obtain application demand data of the heating film; a processing module, configured to determine target resistance value data according to application requirement data of the heating film; Determining target material data based on the target resistance value data; determining a target laser etching pattern and target laser etching parameters based on the target resistance value data and the target material data; etching the target material according to the target laser etching pattern and the target laser etching parameters to obtain a heating element; welding the heating element to a heating film according to preset welding parameters to obtain a target heating film; Wherein, determining the target resistance value data according to the application requirement data of the heating film includes: According to the application demand data of the heating film and , get the original resistance value; The original resistance value is optimized according to the preset optimization threshold to obtain the target resistance value data; wherein the preset optimization threshold is , optimizing the original resistance value to the original resistance value minus 10% of the original resistance value to the original resistance value plus 10% of the original resistance value; Where R is the original resistance value, V is the target operating voltage, and P is the target heating power; Wherein, determining a target laser etching pattern according to the target resistance value data and the target material data includes: Obtain a preset laser etching pattern; According to the preset laser etching pattern, the target resistance value data and the target material data, the pattern adjustment parameters are determined; wherein the resistivity is obtained according to the target material data, the length and cross-sectional area are obtained according to the preset laser etching pattern, and the , calculate the resistance value in the pattern, where is the resistance value in the pattern, is the resistivity, L is the length, and A is the cross-sectional area; by comparing the resistance value in the pattern with the target resistance value in the target resistance value data, the difference between the two is obtained, and by adjusting the length and cross-sectional area in the preset laser etching pattern, the resistance value in the pattern is close to or equal to the target resistance value in the target resistance value data. At this time, the length and cross-sectional area in the preset laser etching pattern are pattern adjustment parameters; According to the pattern adjustment parameters, a target laser etching pattern is determined.

3. A computing device, characterized in that include: A processor and a memory storing a computer program, wherein when the computer program is executed by the processor, the method according to claim 1 is performed.

4. A computer-readable storage medium, characterized in that The invention stores instructions which, when executed on a computer, cause the computer to execute the method according to claim 1 .

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