Heat dissipation system, chip module and electronic equipment

By introducing circulating flowing phase-changing heat conducting medium and dielectric phase-change structure into the chip heat dissipation system, the problem of poor heat dissipation effect of the chip is solved, more efficient heat diffusion and transfer are achieved, and the stability and operating performance of the chip are improved.

CN119560467AActive Publication Date: 2025-03-04CHENGDU HAIGUANG INTEGRATED CIRCUIT DESIGN CO LTD
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Patent Information

Application Number
CN202411720161.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-27
Publication Date
2025-03-04
Estimated Expiration
2044-11-27

AI Technical Summary

Technical Problem

With the increase in chip integration and power consumption, the demand for heat dissipation of chips continues to increase. It is difficult for the existing technology to effectively solve the problem of poor heat dissipation of chips, affecting the operating performance of chips.

Method used

A heat dissipation system is provided, including a heat expansion layer, an interposer layer and a heat exchange layer. The heat expansion layer is in contact with the chip and is filled with a phase-change heat conducting medium with a circulating flow. The dielectric phase-change structure includes an evaporation zone, a condensation zone and a transfer zone, and the heat of the chip is rapidly diffused and transferred through the phase-change change and circulating flow.

Benefits of technology

Through layer by layer heat conduction and circulating flow of phase-changing heat conduction medium, the heat dissipation effect of the chip is significantly improved, the chip temperature is reduced, and the stability and operating performance of the chip are improved.

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Abstract

The embodiment of the invention provides a heat dissipation system, a chip module and electronic equipment, the heat dissipation system comprises a heat diffusion layer, the heat diffusion layer is in contact with a chip, the heat diffusion layer comprises a medium phase change structure, and the medium phase change structure is filled with a circularly flowing phase change heat conduction medium; the phase change of the phase change heat-conducting medium is used for diffusing the heat of the chip; the intermediary layer is connected with the heat diffusion layer and the heat exchange layer and transmits the heat absorbed by the phase change heat-conducting medium from the chip to the heat exchange layer; and the heat exchange layer exchanges heat with a cooling medium to take away heat. According to the heat dissipation system provided by the embodiment of the invention, the heat dissipation effect of the chip can be improved, and the operation performance of the chip is improved.
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Description

Technical Field

[0001] The embodiments of the present application relate to the field of integrated circuit technology, and specifically to a heat dissipation system, a chip module, and an electronic device. Background Art

[0002] During the operation of the chip, the heat generated by the chip can be dissipated through the heat dissipation system. However, as the integration of the chip increases and the power consumption increases, the heat dissipation requirements of the chip are also increasing. Therefore, how to provide a heat dissipation system to improve the heat dissipation effect of the chip and improve the operating performance of the chip has become a technical problem that technicians in this field need to solve urgently. Summary of the invention

[0003] In view of this, the embodiments of the present application provide a heat dissipation system, a chip module and an electronic device to improve the heat dissipation effect of the chip and enhance the operating performance of the chip.

[0004] To achieve the above objectives, the embodiments of the present application provide the following technical solutions.

[0005] In a first aspect, an embodiment of the present application provides a heat dissipation system, comprising:

[0006] A heat expansion layer, the heat expansion layer is in contact with the chip, the heat expansion layer comprises a medium phase change structure, the medium phase change structure is filled with a circulating phase change heat conductive medium; the phase change of the phase change heat conductive medium is used to diffuse the heat of the chip;

[0007] The intermediary layer connects the heat expansion layer and the heat exchange layer, and transfers the heat absorbed by the phase change heat conducting medium from the chip to the heat exchange layer;

[0008] The heat exchange layer takes away heat by exchanging heat with the cooling medium.

[0009] Optionally, the medium phase change structure at least includes an evaporation zone, a condensation zone, and a transfer zone between the evaporation zone and the condensation zone; the evaporation zone is used to conduct the heat of the chip and change the phase change heat-conducting medium from liquid to gas; the transfer zone is used to transfer the gaseous phase change heat-conducting medium from the evaporation zone to the condensation zone; the temperature of the condensation zone is lower than the temperature of the evaporation zone, and is used to change the gaseous phase change heat-conducting medium into liquid;

[0010] The heat expansion layer also includes a reflux zone, which is used to reflux the liquid phase-change heat-conducting medium from the condensation zone to the evaporation zone.

[0011] Optionally, the heat expansion layer further includes: a support structure, wherein the support structure is supported between the evaporation area and the condensation area.

[0012] Optionally, there are multiple supporting structures, and the reflow zone is arranged in at least some of the supporting structures among the multiple supporting structures, wherein the reflow zone includes a first capillary structure, the first capillary structure includes a first surface layer structure in the reflow zone, and multiple through holes arranged in the first surface layer structure.

[0013] Optionally, the plurality of supporting structures include a first supporting structure and a second supporting structure; wherein the first capillary structure is disposed on a sidewall of the first supporting structure, and the first capillary structure is not disposed on a sidewall of the second supporting structure.

[0014] Optionally, the first supporting structure and the second supporting structure are arranged at intervals of a set number.

[0015] Optionally, the evaporation region is provided with a second capillary structure, the second capillary structure comprising a second surface layer structure in the evaporation region, and a plurality of through holes provided in the second surface layer structure;

[0016] The condensation zone is provided with a third capillary structure, the third capillary structure comprising a third surface layer structure in the condensation zone, and a plurality of through holes provided in the third surface layer structure;

[0017] Wherein, the number of the plurality of through holes in the third capillary structure, the first capillary structure and the second capillary structure increases sequentially.

[0018] Optionally, the second capillary structure provided in the evaporation zone includes: a first capillary structure and a second capillary structure, wherein the second capillary structure is located above the first capillary structure; the number of through holes in the second capillary structure is greater than the number of through holes in the first capillary structure, and the thickness of the second capillary structure is less than the thickness of the first capillary structure.

[0019] Optionally, the height of the support structure is determined according to the heat exchange efficiency of the medium phase change structure, wherein the heat exchange efficiency is negatively correlated with the height of the support structure.

[0020] Optionally, the intermediate layer comprises an intermediate layer body, a first surface of the intermediate layer body is a setting surface for the condensation zone of the heat expansion layer, and a second surface of the intermediate layer body is a setting surface for the heat exchange layer to perform heat exchange.

[0021] Optionally, the heat expansion layer has a base plate in contact with the chip; the intermediary layer also includes: an intermediary layer support column, the intermediary layer support column is connected to both ends of the base plate to form a space surrounded by the intermediary layer and the base plate; the dielectric phase change structure is arranged on the base plate and is in the space surrounded by the intermediary layer and the base plate.

[0022] Optionally, the heat exchange layer comprises:

[0023] A heat sink, which is used to perform heat exchange with a cooling medium to remove heat conducted by the interlayer;

[0024] The cooling medium inlet and outlet pipes include a cooling medium inlet pipe and a cooling medium outlet pipe.

[0025] Optionally, the heat exchange layer further comprises a cover plate, the cover plate comprising a cover plate cover surface and a cover plate support column; the cover plate support column is connected to the end of the second surface of the intermediary layer body to form a closed cavity surrounded by the cover plate cover surface, the cover plate support column and the second surface of the intermediary layer body, and the heat sink is placed in the closed cavity;

[0026] Wherein, the inlet pipe and the outlet pipe are arranged on the cover surface of the cover plate; the cooling medium is driven by an external water pump, enters the closed cavity through the inlet pipe, flows through the heat sink and then flows out through the outlet pipe.

[0027] In a second aspect, an embodiment of the present application provides a chip module, comprising at least one chip and a heat dissipation system as described in the first aspect above.

[0028] In a third aspect, an embodiment of the present application provides an electronic device, wherein the electronic device comprises the chip module as described in the second aspect above.

[0029] The heat dissipation system provided in the embodiment of the present application includes: a heat expansion layer, which is in contact with the chip, and the heat expansion layer includes a medium phase change structure, and the medium phase change structure is filled with a circulating phase change heat conductive medium; the phase change change of the phase change heat conductive medium is used to diffuse the heat of the chip; an intermediate layer, which connects the heat expansion layer and the heat exchange layer, and conducts the heat absorbed by the phase change heat conductive medium from the chip to the heat exchange layer; the heat exchange layer, which takes away the heat by exchanging heat with the cooling medium.

[0030] It can be seen that in the heat dissipation system provided by the embodiment of the present application, the heat expansion layer is in contact with the chip and can conduct the heat generated by the chip. At the same time, the heat expansion layer is provided with a medium phase change structure, and the medium phase change structure is filled with a circulating phase change heat conductive medium. The phase change heat conductive medium can absorb the chip heat conducted by the heat expansion layer and change from liquid to gas. The phase change process of the phase change heat conductive medium from liquid to gas can absorb the heat of the chip, thereby helping to diffuse and transfer the heat of the chip in a shorter time and avoid the temperature rise of the chip; after the phase change heat conductive medium absorbs heat and vaporizes, it is condensed back to liquid under the synergistic action of the intermediate layer and the heat exchange layer, and the intermediate layer, as a bridge connecting the heat expansion layer and the heat exchange layer, can conduct the heat released in the process of the phase change heat conductive medium changing from gas to liquid to the heat exchange layer, thereby avoiding heat retention in the heat expansion layer, making the heat distribution in the heat dissipation system more uniform; further, after receiving the heat, the heat exchange layer exchanges heat with the cooling medium, which can take away the heat and dissipate the heat of the chip to the outside. Through the above-mentioned layer-by-layer heat conduction and the circulating flow of phase-change heat-conducting medium, the heat dissipation system provided by the embodiment of the present application can improve the heat exchange efficiency at each level of the heat expansion layer, the intermediate layer, and the heat exchange layer, quickly dissipate the heat generated by the chip to the outside, and effectively reduce the chip temperature, thereby improving the heat dissipation effect of the chip and improving the stability and operating performance of the chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.

[0032] Figure 1 This is a structural example diagram of a water cooling plate;

[0033] Figure 2 is a structural example diagram of a chip cooling system provided in an embodiment of the present application;

[0034] Figure 3 This is an example diagram of the combined structure of the heat expansion layer and the intermediate layer;

[0035] Figure 4 This is a local enlarged structural example diagram of the dielectric phase change structure;

[0036] Figure 5 is an example diagram of a support structure;

[0037] Figure 6 This is an example diagram of the capillary structure of the evaporation zone;

[0038] Figure 7 This is a diagram showing an example of the structure of the intermediary layer;

[0039] Figure 8 This is an example diagram of the combined structure of the interposer and the heat sink;

[0040] Fig. 9 It is a structural example diagram of the heat exchange layer;

[0041] Fig.10 is another optional structural example diagram of the chip cooling system provided in the embodiment of the present application;

[0042] Fig.11 This is an example diagram of an optional structure of a chip module provided in an embodiment of the present application. DETAILED DESCRIPTION

[0043] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0044] With the development of electronic technology, the integration of chips is getting higher and higher, and the number of transistors contained in a unit area of ​​the chip is increasing, which in turn leads to higher and higher power consumption of the chip. If the heat generated by the chip cannot be dissipated in time, the performance of the chip will be seriously affected. Therefore, a heat dissipation system can be set for the chip, so that during the operation of the chip, the heat generated by the chip operation can be dissipated in time through the heat dissipation system.

[0045] A heat dissipation system capable of dissipating heat for a chip may be a water-cooled heat dissipation system, that is, a heat dissipation system using a coolant such as water as a cooling medium; a water-cooled heat dissipation system may be, for example, a water-cooled plate, which removes the heat generated by the chip by the flow of a coolant (such as water) inside the water-cooled plate, thereby dissipating heat for the chip. Specifically, Figure 1 This is a structural example diagram of the water cooling plate. Figure 1 The water cooling plate includes a base plate 101, a heat sink 102, and a coolant inlet and outlet pipe 103; wherein the base plate 101 is in direct contact with the chip, the heat of the chip can be transferred to the heat sink 102 through the base plate 101, and the coolant flowing into the coolant inlet and outlet pipe 103 can exchange heat with the heat sink 102, thereby taking away the heat of the chip; further, the water cooling plate can drive the circulation of the coolant through an external water pump, thereby continuously dissipating heat for the chip through the circulation of the coolant.

[0046] Although the above-mentioned water cooling plate type heat dissipation system can realize chip heat dissipation, due to the thick bottom plate of the water cooling plate, for chips with high heat flux density (for example, heat flux density exceeding 150W / cm 2The water cooling plate cannot dissipate the heat of the chip in time, resulting in poor heat dissipation and affecting the performance of the chip.

[0047] In view of this, an embodiment of the present application provides a heat dissipation system that can improve the heat exchange efficiency, thereby improving the heat dissipation effect of the chip and improving the operating performance of the chip.

[0048] Figure 2 is a structural example diagram of a chip cooling system provided in an embodiment of the present application, referring to Figure 2 , the heat dissipation system includes the following.

[0049] The heat expansion layer 100 is in contact with the chip 101, and includes a medium phase change structure 110. The medium phase change structure is filled with a circulating phase change heat conductive medium. The phase change of the phase change heat conductive medium is used to diffuse the heat of the chip. When the phase change heat conductive medium changes from liquid to gas, it absorbs the heat of the chip, and when it changes from gas to liquid, it releases the heat.

[0050] The intermediate layer 200 connects the heat expansion layer 100 and the heat exchange layer 300 , and conducts the heat absorbed by the phase change heat conductive medium from the chip to the heat exchange layer 300 .

[0051] The heat exchange layer 300 removes heat by exchanging heat with the cooling medium.

[0052] In an embodiment of the present application, the heat dissipation system consists of a three-layer structure of a heat expansion layer, an intermediate layer and a heat exchange layer, wherein the heat expansion layer in contact with the chip includes a medium phase change structure, and the medium phase change structure is filled with a circulating phase change heat conductive medium, and the phase change heat conductive medium has good thermal conductivity. The phase change change and circulating flow of the phase change heat conductive medium help the chip to quickly diffuse heat; and then through the intermediate layer connecting the heat expansion layer and the heat exchange layer, the chip heat diffused by the phase change heat conductive medium can be conducted to the heat exchange layer, and the heat exchange layer exchanges heat with the cooling medium to dissipate the heat of the chip outward, thereby improving the heat exchange efficiency from the chip to the cooling medium, improving the heat dissipation effect of the chip, and improving the operating performance of the chip.

[0053] Specifically, the heat expansion layer is in contact with the chip and can conduct the heat generated by the chip. At the same time, the heat expansion layer is provided with a medium phase change structure, and the medium phase change structure is filled with a circulating phase change heat conductive medium. The phase change heat conductive medium can absorb the chip heat conducted by the heat expansion layer and change from liquid to gas. The phase change process of the phase change heat conductive medium from liquid to gas can absorb the heat of the chip, thereby helping to diffuse and transfer the heat of the chip in a shorter time and avoid the temperature rise of the chip. After the phase change heat conductive medium absorbs heat and vaporizes, it is condensed back to liquid under the synergistic action of the intermediate layer and the heat exchange layer. The intermediate layer serves as a bridge connecting the heat expansion layer and the heat exchange layer, and can conduct the heat released in the process of the phase change heat conductive medium changing from gas to liquid to the heat exchange layer, thereby avoiding heat retention in the heat expansion layer and making the heat distribution in the heat dissipation system more uniform. Furthermore, after the heat exchange layer receives the heat, it exchanges heat with the cooling medium, which can take away the heat and dissipate the heat of the chip outward. Through the above-mentioned layer-by-layer heat conduction and the circulating flow of phase-change heat-conducting medium, the heat dissipation system provided by the embodiment of the present application can improve the heat exchange efficiency at each level of the heat expansion layer, the intermediate layer, and the heat exchange layer, quickly dissipate the heat generated by the chip to the outside, and effectively reduce the chip temperature, thereby improving the heat dissipation effect of the chip and improving the stability and operating performance of the chip.

[0054] During the chip heat dissipation process of the embodiment of the present application, the phase-change heat-conducting medium can absorb the heat of the chip, change from liquid to gas, thereby diffusing the heat of the chip, and then change from gas to liquid under the synergistic action of the intermediate layer and the heat exchange layer to release heat; further, the embodiment of the present application supports the circulation of the phase-change heat-conducting medium through structural design, thereby reducing energy consumption.

[0055] In an optional example, the phase-change heat-conducting medium may include one of pure water, ethylene glycol solution, fluorinated liquid, and Freon.

[0056] Figure 3 This is an example diagram of the combined structure of the heat expansion layer and the intermediate layer. Figure 4 This is a partial enlarged structural example of the dielectric phase change structure. Figures 2 to 4 , the heat expansion layer in the embodiment of the present application is introduced in detail.

[0057] The heat expansion layer 100 has a base plate 120 that is in direct contact with the chip 101, and a dielectric phase change structure 110 disposed on the base plate 120; the intermediary layer 200 includes an intermediary layer body 210 and an intermediary layer support column 220, and the intermediary layer support column 220 is connected to both ends of the base plate 120 to form a space surrounded by the intermediary layer 200 and the base plate 120, and the dielectric phase change structure 110 is located in the space surrounded by the intermediary layer and the base plate.

[0058] In the embodiment of the present application, the heat expansion layer in contact with the chip adopts a dielectric phase change structure design, and the heat of the chip is diffused and transferred by the phase change of the phase change heat conductive medium filled in the dielectric phase change structure, which can effectively improve the heat exchange efficiency of the chip.

[0059] Specifically, refer to Figure 4 The medium phase change structure at least includes an evaporation zone 111, a condensation zone 113, and a transfer zone 112 between the evaporation zone and the condensation zone.

[0060] The evaporation zone 111 is used to conduct the heat of the chip and change the phase-change heat-conducting medium from liquid to gas; that is, the phase-change heat-conducting medium can change from the original liquid to gas in the evaporation zone by absorbing the heat of the chip.

[0061] Specifically, the transfer zone 112 is used to transfer the gaseous phase-change heat-conducting medium from the evaporation zone 111 to the condensation zone 113; the temperature of the condensation zone 113 is lower than the temperature of the evaporation zone 111, and is used to change the gaseous phase-change heat-conducting medium into a liquid state; that is, since the temperature of the condensation zone is lower than the temperature of the evaporation zone, the phase-change heat-conducting medium will undergo a liquefaction reaction in the condensation zone, changing from a gaseous state to a liquid state, thereby releasing heat and realizing the diffusion and transfer of chip heat.

[0062] Further, continue to refer to Figure 4 , the heat expansion layer also includes a reflow zone 114; wherein the medium phase change structure can cause the phase change heat conductive medium in the medium phase change structure to undergo a phase change, for example, the phase change heat conductive medium changes from liquid to gas, absorbs the heat of the chip, and then changes from gas to liquid, releases heat, so as to achieve heat diffusion and transfer; the reflow zone 114 is used to transform the phase change heat conductive medium that has changed during the heat exchange process back to the state originally used for heat exchange, for example, transferring the phase change heat conductive medium whose position has changed to the area originally used to absorb the heat of the chip, thereby realizing the recycling of the phase change heat conductive medium and saving energy consumption.

[0063] In an optional implementation, the phase-change heat-conducting medium becomes liquid in the condensation zone. After completing the heat transfer of the chip, it can flow back from the condensation zone 113 to the evaporation zone 111 through the reflux zone 114, forming a circulating flow of the phase-change heat-conducting medium, realizing recycling, and thereby improving the heat exchange efficiency of the chip.

[0064] Further, continue to refer to Figure 4 The heat expansion layer further includes: a support structure 115 , and the support structure 115 is supported between the evaporation area 111 and the condensation area 113 .

[0065] In the embodiment of the present application, the support structure 115 can play the role of strengthening and fixing the dielectric phase change structure; when the dielectric phase change structure is subjected to external mechanical pressure, or the pressure generated by the phase change of the internal phase change thermal conductive medium, it can protect the dielectric phase change structure to avoid bulging, deformation, etc., thereby maintaining the flatness of the contact area between the heat expansion layer bottom plate and the chip.

[0066] In an optional implementation, refer to Figure 5 , Figure 5 It is an example diagram of a supporting structure, the number of the supporting structures 115 can be multiple, and the reflow zone 114 is arranged in at least some of the supporting structures among the multiple supporting structures, wherein the reflow zone 114 includes a first capillary structure 116, and the first capillary structure includes a first surface layer structure in the reflow zone, and a plurality of through holes arranged in the first surface layer structure.

[0067] In an embodiment of the present application, in order to realize the circulation flow of the phase-change heat-conducting medium, it is necessary to set up a reflux zone for the liquid phase-change heat-conducting medium to return from the condensation zone to the evaporation zone, wherein the reflux zone can be set in at least part of the supporting structures among the multiple supporting structures, and the reflux zone includes a first capillary structure; that is, the reflux zone is located between the condensation zone and the evaporation zone, and the phase-change heat-conducting medium can reflux from the condensation zone to the evaporation zone through the reflux zone.

[0068] In an optional implementation, the side walls of some of the multiple supporting structures are provided with the first capillary structure; the multiple supporting structures may include a first supporting structure and a second supporting structure; wherein the side walls of the first supporting structure are provided with the first capillary structure 116, and the side walls of the second supporting structure are not provided with the first capillary structure.

[0069] The number of the first supporting structures and the number of the second supporting structures may be the same; in the space between the evaporation area and the condensation area, the first supporting structures and the second supporting structures are arranged at intervals according to a set number.

[0070] In an optional example, the first support structure and the second support structure may be arranged at the same intervals, for example, Figure 5 The first supporting structure and the second supporting structure can be arranged in order of two at intervals, so as to accurately control the distribution of the capillary traction force in the reflux zone, thereby controlling the flow path and speed of the liquid phase-change heat-conducting medium.

[0071] Further, continue to refer to Figure 4 and Figure 5 , further, refer to Figure 4The open area between the evaporation zone 111 and the condensation zone 113 supported by the support structure 115 is the transfer zone 112, which serves as the gas volatilization area between the evaporation zone and the condensation zone; that is, after the phase-change heat-conducting medium changes from liquid to gas in the evaporation zone, it volatilizes to the condensation zone through the transfer zone between the evaporation zone and the condensation zone. A certain distance is generated between the evaporation zone and the condensation zone by the support structure, and this distance is the transfer distance of the gaseous phase-change heat-conducting medium from the evaporation zone to the condensation zone.

[0072] Among them, the height of the support structure 115 can be determined according to the heat exchange efficiency of the medium phase change structure, and the heat exchange efficiency is negatively correlated with the height of the support structure; that is, in the embodiment of the present application, the height of the support structure can be adjusted according to the heat exchange efficiency of the medium phase change structure. For example, assuming that the heat exchange efficiency of the medium phase change structure is low at this time, the height of the support structure can be adjusted to be lowered, that is, the distance for the phase change heat-conducting medium to volatilize from the evaporation zone to the condensation zone for heat exchange is shortened, thereby achieving the effect of improving the heat exchange efficiency of the medium phase change structure.

[0073] In an optional example, the height of the support column may range from 0.5 mm to 1.5 mm.

[0074] Furthermore, in the embodiment of the present application, the evaporation zone 111 and the condensation zone 113 are both provided with a capillary structure, and thus the heat transfer and the recycling of the phase-change heat-conducting medium can be achieved through the capillary structure.

[0075] Specifically, continue to refer to Figure 4 and Figure 5 The evaporation zone 111 is provided with a second capillary structure 117, and the condensation zone 113 is provided with a third capillary structure 118; wherein the second capillary structure includes a second surface layer structure in the evaporation zone and a plurality of through holes provided in the second surface layer structure; the third capillary structure includes a third surface layer structure in the condensation zone and a plurality of through holes provided in the third surface layer structure. Optionally, the third surface layer structure is, for example, provided on the surface of the interposer 200.

[0076] In an optional example, the through hole can be a hole with a thickness and a set shape (including but not limited to a square shape), and the phase change heat conductive medium can be filled in the hole of the evaporation zone 111, and the heat of the chip is transferred to the evaporation zone, and then the phase change heat conductive medium in the evaporation zone absorbs heat and changes from liquid to gas, and evaporates from the holes of the evaporation zone to the condensation zone; wherein the gaseous phase change heat conductive medium releases heat in the condensation zone and changes from gas to liquid, filling the entire condensation zone, thereby realizing the diffusion and transfer of chip heat.

[0077] Optionally, Figure 6This is an example of the capillary structure of the evaporation zone. Figure 6 The second capillary structure 117 disposed in the evaporation region 111 may include: a first capillary structure 1171 and a second capillary structure 1172 , wherein the second capillary structure 1172 is located on the first capillary structure 1171 .

[0078] The number of through holes in the second capillary structure 1172 may be greater than the number of through holes in the first capillary structure 1171 , and the thickness of the second capillary structure is less than the thickness of the first capillary structure.

[0079] In an embodiment of the present application, the evaporation zone can adopt a two-layer capillary structure setting, wherein, when the phase-change heat-conducting medium undergoes a phase change in the evaporation zone, since the thickness of the first layer (i.e., the lower layer) capillary structure is greater than the thickness of the second layer (i.e., the upper layer) capillary structure, the phase-change heat-conducting medium that has not completed vaporization (has not completely turned into a gaseous state) will be intercepted in the first layer of the capillary structure until it is completely vaporized; and the phase-change heat-conducting medium that has completely turned into a gaseous state can overflow from the second layer of the capillary structure and evaporate to the condensation zone through the transfer zone, wherein the number of through holes in the second layer of the capillary structure is greater than the number of through holes in the first layer of the capillary structure, and at the same time, the size of each through hole in the second layer of the capillary structure is smaller than the size of each through hole in the first layer of the capillary structure, so that the second layer of the capillary structure can further improve the filtering effect on the gaseous phase-change heat-conducting medium.

[0080] In an optional example, the thickness of the first layer of capillary structure 1171 can range from 0.1 mm to 0.15 mm, and the number of through holes per unit area can range from 100 to 150 (for example, 100 through holes per square centimeter), and the thickness of the second layer of capillary structure 1172 can range from 0.05 mm to 0.075 mm, and the number of through holes per unit area can range from 200 to 300 (for example, 200 through holes per square centimeter).

[0081] In order to ensure that the liquid phase-change heat-conducting medium can flow back from the condensation zone to the evaporation zone, it is necessary to reasonably set the number of through holes in the capillary structure from the condensation zone, the reflux zone to the evaporation zone.

[0082] In an optional implementation, the number of through holes in the capillary structures of the condensation zone, reflux zone and evaporation zone increases successively, that is, the number of multiple through holes in the third capillary structure, the first capillary structure and the second capillary structure increases successively, and the capillary traction generated by the condensation zone, the reflux zone and the evaporation zone increases successively, resulting in a circulating flow of phase change heat-conducting medium in the evaporation zone, the reflux zone and the condensation zone.

[0083] That is to say, from the condensation zone 113, the reflow zone 114 to the evaporation zone 111, the number of through holes in the capillary structure increases successively, so that the capillary traction forces generated in the condensation zone 113, the reflow zone and the evaporation zone 113 will increase successively, so that the liquid phase-change heat-conducting medium is affected by the capillary traction force and returns from the condensation zone to the evaporation zone; assuming that the capillary traction force generated by the phase-change heat-conducting medium in the condensation zone is F1, the capillary traction force generated in the reflow zone is F2, and the capillary traction force generated in the evaporation zone is F3, then the capillary traction forces in the three zones are related by F1: <F2<F3。

[0084] Furthermore, in the embodiment of the present application, through the setting of the medium phase change structure and the reflux zone, the phase change heat conductive medium can form a circulating flow of heated evaporation, condensation and reflux in the heat expansion layer, thereby saving energy consumption and improving heat exchange efficiency while achieving the heat dissipation function.

[0085] Figure 7 This is an example diagram of the structure of the intermediary layer. Figure 8 This is an example diagram of the combined structure of the interposer and the heat sink. Figure 7 and Figure 8 , the intermediate layer in the embodiment of the present application is introduced in detail.

[0086] In the embodiment of the present application, the intermediate layer connects the heat expansion layer and the heat exchange layer, and forms the structures of the two different heat dissipation methods into a whole, which can quickly transfer the heat in the heat expansion layer to the heat exchange layer, thereby improving the heat exchange efficiency.

[0087] Specifically, the intermediary layer 200 includes an intermediary layer body 210 and an intermediary layer support column 220, wherein the first surface of the intermediary layer body is a setting surface for the condensation zone 113 of the heat expansion layer, and the second surface of the intermediary layer body is a setting surface for the heat exchange layer for heat exchange, and the heat exchange layer may include a heat sink 310 for heat exchange; the intermediary layer connects the condensation zone 113 in the heat expansion layer and the heat sink 310 in the heat exchange layer, so that the heat released by the phase change heat conductive medium in the condensation zone can be quickly conducted to the heat sink for heat exchange.

[0088] That is to say, when the condensation area 113 and the heat sink 310 are set in the embodiment of the present application, a common intermediate layer structure is used, thereby shortening the distance from the heat source (ie, the chip) to the heat sink and improving the heat exchange efficiency of the entire heat dissipation system.

[0089] In an embodiment of the present application, the material of the intermediate layer may be copper; in other embodiments, the material of the intermediate layer may also be other materials with good thermal conductivity.

[0090] Fig. 9 This is a structural example diagram of the heat exchange layer, combined with Figure 2 and Fig. 9, the heat exchange layer in the embodiment of the present application is introduced in detail below.

[0091] The heat exchange layer 300 may include: a heat sink 310, which is used to perform heat exchange with the cooling medium to remove the heat conducted by the intermediate layer; and a cooling medium inlet and outlet pipe 320, including a cooling medium inlet pipe and a cooling medium outlet pipe.

[0092] In the embodiment of the present application, a heat sink is used as a heat exchange structure, which can increase the surface area of ​​the heat exchange structure in contact with the cooling medium, promote heat exchange between the heat sink and the cooling medium, and improve heat exchange efficiency.

[0093] In an optional example, the shape of the heat sink 310 can be regular or heterogeneous, the thickness of the heat sink 310 can range from 0.1 mm to 0.3 mm, and the spacing between the heat sinks can range from 0.1 mm to 0.3 mm. The size and spacing of the heat sink can be reasonably set according to the requirements of heat exchange efficiency to improve the heat exchange efficiency.

[0094] Furthermore, the heat exchange layer 300 also includes a cover plate, which includes a cover plate cover surface 331 and a cover plate support column 332; the cover plate support column 332 is connected to the end of the second surface of the intermediate layer body to form a closed cavity surrounded by the cover plate cover surface, the cover plate support column and the second surface of the intermediate layer body, and the heat sink 310 is placed in the closed cavity.

[0095] Fig.10 is another optional structural example diagram of the chip cooling system provided in the embodiment of the present application, combined with Fig. 9 and Fig.10 The cooling medium inlet and outlet pipe 320 includes an inlet pipe and an outlet pipe, and the inlet pipe and the outlet pipe are arranged on the cover surface of the cover plate. The cooling medium is driven by an external water pump (not shown in the figure) to enter the closed cavity through the inlet pipe, flow through the heat sink, and flow out through the outlet pipe to be transferred to an external heat exchanger (not shown in the figure) to take away the heat.

[0096] That is to say, the cover plate of the heat exchange layer and the surface of the intermediate layer on which the heat sink is arranged surround each other to form a closed cavity that can be filled with cooling medium. Driven by an external water pump, the cooling medium passes through the inlet pipe of the cover plate, passes through the heat sink through the flow channel designed in the closed cavity, and flows out from the outlet pipe of the cover plate, transferring the heat to the external heat exchanger, thereby completing the heat exchange process.

[0097] Continue to refer to Fig.10In the embodiment of the present application, the heat dissipation system can set the morphology of the contact surface between the dielectric phase change structure and the chip according to the surface morphology of the chip 101. For example, the morphology of the contact surface between the dielectric phase change structure and the chip should match the surface morphology of the chip. In an optional example, the heat dissipation system can set the size of the part of the dielectric phase change structure in contact with the chip 101 in the heat expansion layer according to the size of the chip 101, to ensure that the chip is in full contact with the part of the dielectric phase change structure, while avoiding the part of the dielectric phase change structure that is not in contact with the chip from occupying space and causing a waste of space resources.

[0098] As an optional implementation, the operation process of the heat dissipation system provided in the embodiment of the present application may be as follows.

[0099] When the chip generates heat during operation, the heat expansion layer transfers the heat of the chip to the phase-change heat-conducting medium in the evaporation zone within the medium phase-change structure. After absorbing the heat, the phase-change heat-conducting medium changes from liquid to gas, and absorbs a large amount of chip heat through this phase change process. At the same time, in order to support efficient heat absorption and smooth flow of the gaseous phase-change heat-conducting medium, a capillary structure is provided in the evaporation zone. A plurality of densely arranged through holes with small apertures are arranged in the capillary structure, thereby generating a strong capillary traction force during the heat absorption process of the liquid phase-change heat-conducting medium, guiding the liquid phase-change heat-conducting medium to continuously absorb heat and quickly transform into a gas.

[0100] The gaseous phase-change heat-conducting medium moves from the evaporation zone to the transfer zone to achieve initial diffusion of heat.

[0101] The gaseous phase-change heat-conducting medium begins to condense back into liquid after reaching the condensation zone with a lower temperature. This phase change process will release the heat absorbed by the gaseous phase-change heat-conducting medium. The number of through holes in the capillary structure in the condensation zone is relatively low, and the capillary traction force is weak, but it can guide the condensed liquid phase-change heat-conducting medium to gather in the condensation zone and gradually flow to the reflux zone.

[0102] After the condensation, the liquid phase-change heat-conducting medium gradually gathers in the condensation zone, and then returns to the evaporation zone through the reflux zone with a capillary structure on the supporting structure. The number of through holes in the capillary structure in the reflux zone is smaller than that in the evaporation zone and larger than that in the condensation zone, thereby generating a capillary traction force, which can effectively guide the liquid phase-change heat-conducting medium to flow back to the evaporation zone along the capillary structure. Through the guidance of the capillary traction force, the liquid phase-change heat-conducting medium can reflux in a directed manner, thereby realizing the continuous circulation of the phase-change heat-conducting medium in the heat dissipation system and preparing for the next round of heat dissipation cycle.

[0103] At the same time, the heat released in the condensation area will be conducted to the intermediate layer, and the intermediate layer will transfer the heat to the heat exchange layer, and the heat exchange layer will perform the final heat exchange with the cooling medium to take away the heat of the chip; that is, the heat sink of the heat exchange layer exchanges heat with the cooling medium (such as coolant), and the cooling medium takes away the heat conducted to the heat sink when passing through the heat sink, and flows out of the heat dissipation system through the cooling medium inlet and outlet pipes, and transfers the heat to the external heat exchanger to complete the heat dissipation cycle.

[0104] It can be seen that in the heat dissipation system provided by the embodiment of the present application, the heat expansion layer is in contact with the chip and can conduct the heat generated by the chip. At the same time, the heat expansion layer is provided with a medium phase change structure, and the medium phase change structure is filled with a circulating phase change heat conductive medium. The phase change heat conductive medium can absorb the chip heat conducted by the heat expansion layer and change from liquid to gas. The phase change process of the phase change heat conductive medium from liquid to gas can absorb the heat of the chip, thereby helping to diffuse and transfer the heat of the chip in a shorter time and avoid the temperature rise of the chip; after the phase change heat conductive medium absorbs heat and vaporizes, it is condensed back to liquid under the synergistic action of the intermediate layer and the heat exchange layer, and the intermediate layer, as a bridge connecting the heat expansion layer and the heat exchange layer, can conduct the heat released in the process of the phase change heat conductive medium changing from gas to liquid to the heat exchange layer, thereby avoiding heat retention in the heat expansion layer, making the heat distribution in the heat dissipation system more uniform; further, after receiving the heat, the heat exchange layer exchanges heat with the cooling medium, which can take away the heat and dissipate the heat of the chip to the outside. Through the above-mentioned layer-by-layer heat conduction and the circulating flow of phase-change heat-conducting medium, the heat dissipation system provided by the embodiment of the present application can improve the heat exchange efficiency at each level of the heat expansion layer, the intermediate layer, and the heat exchange layer, quickly dissipate the heat generated by the chip to the outside, and effectively reduce the chip temperature, thereby improving the heat dissipation effect of the chip and improving the stability and operating performance of the chip.

[0105] An embodiment of the present application also provides a chip module, comprising at least one chip and the heat dissipation system as described in the above embodiment.

[0106] In an alternative example, Fig.11 is an optional structural example diagram of a chip module provided in an embodiment of the present application, wherein: Fig.11 The two chips are connected in series to form a cooling system. Fig.10 and Fig.11 , Fig.11 A top view of the chip module structure.

[0107] Reference Fig.11The multiple chips may include chip 1201 and chip 1202, an inlet pipe 1203 and an outlet pipe 1204. When the two chips are cooled, the cooling medium may flow in from the inlet pipe of the cooling system of one of the chips, for example, the inlet pipe 1203 of the cooling system of chip 1201, pass through chip 1201, and then flow into chip 1202, and finally flow out from the outlet pipe 1204 of the cooling system of chip 1202 to complete the heat dissipation.

[0108] It should be noted that Fig.11 This is just an example. In other examples, the cooling medium can also flow in from the inlet pipe of the heat dissipation system of chip 1202, pass through chip 1202, and then flow into chip 1201, and finally flow out from the outlet pipe of the heat dissipation system of chip 1201 to complete the heat dissipation.

[0109] In other optional examples, the multiple chips may include four chips, and the cooling medium may flow in from one of the inlet pipes, be divided into four pipes and flow into the heat dissipation systems of the four chips respectively to dissipate heat for the chips, and finally flow out from the four pipes to one outlet pipe to complete the heat dissipation.

[0110] An embodiment of the present application further provides an electronic device, such as a terminal device or a server device, wherein the electronic device includes the chip module as described in the above embodiment.

[0111] The above describes multiple implementation schemes provided by the embodiments of the present application. The various optional methods introduced in each implementation scheme can be combined and cross-referenced with each other without conflict, thereby extending a variety of possible implementation schemes, which can all be considered as implementation schemes disclosed and open in the embodiments of the present application.

[0112] Although the embodiments of the present application are disclosed above, the present application is not limited thereto. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present application. Therefore, the scope of protection of the present application shall be subject to the scope defined by the claims.

Claims

1. A heat dissipation system, characterized in that: include: A heat expansion layer, the heat expansion layer is in contact with the chip, the heat expansion layer comprises a dielectric phase change structure, and the dielectric phase change structure is filled with a circulating phase change heat conductive medium; The phase change of the phase change heat conducting medium is used to diffuse the heat of the chip; The intermediary layer connects the heat expansion layer and the heat exchange layer, and transfers the heat absorbed by the phase change heat conducting medium from the chip to the heat exchange layer; The heat exchange layer takes away heat by exchanging heat with the cooling medium.

2. The heat dissipation system according to claim 1, characterized in that: The medium phase change structure at least includes an evaporation zone, a condensation zone, and a transfer zone between the evaporation zone and the condensation zone; the evaporation zone is used to conduct the heat of the chip and change the phase change heat conducting medium from liquid to gas; the transfer zone is used to transfer the gas phase change heat conducting medium from the evaporation zone to the condensation zone; The temperature of the condensation zone is lower than the temperature of the evaporation zone, and is used to change the gaseous phase-change heat-conducting medium into a liquid state; The heat expansion layer further includes a reflux zone, which is used to reflux the liquid phase-change heat-conducting medium from the condensation zone to the evaporation zone.

3. The heat dissipation system according to claim 2, characterized in that: The heat expansion layer further includes: a support structure, wherein the support structure is supported between the evaporation area and the condensation area.

4. The heat dissipation system according to claim 3, characterized in that: There are multiple supporting structures, and the reflow zone is arranged in at least some of the supporting structures among the multiple supporting structures, wherein the reflow zone includes a first capillary structure, the first capillary structure includes a first surface layer structure in the reflow zone, and multiple through holes arranged in the first surface layer structure.

5. The heat dissipation system according to claim 4, characterized in that: The plurality of supporting structures include a first supporting structure and a second supporting structure; wherein the first capillary structure is disposed on a sidewall of the first supporting structure, and the first capillary structure is not disposed on a sidewall of the second supporting structure.

6. The heat dissipation system according to claim 5, characterized in that: The first supporting structure and the second supporting structure are arranged at intervals according to a set number.

7. The heat dissipation system according to any one of claims 4 to 6, characterized in that: The evaporation region is provided with a second capillary structure, the second capillary structure comprising a second surface layer structure in the evaporation region, and a plurality of through holes provided in the second surface layer structure; The condensation zone is provided with a third capillary structure, the third capillary structure comprising a third surface layer structure in the condensation zone, and a plurality of through holes provided in the third surface layer structure; Wherein, the number of the plurality of through holes in the third capillary structure, the first capillary structure and the second capillary structure increases sequentially.

8. The heat dissipation system according to claim 7, characterized in that: The second capillary structure provided in the evaporation zone includes: a first capillary structure and a second capillary structure, wherein the second capillary structure is located above the first capillary structure; the number of through holes in the second capillary structure is greater than the number of through holes in the first capillary structure, and the thickness of the second capillary structure is less than the thickness of the first capillary structure.

9. The heat dissipation system according to any one of claims 3 to 6, characterized in that: The height of the support structure is determined according to the heat exchange efficiency of the medium phase change structure, wherein the heat exchange efficiency is negatively correlated with the height of the support structure.

10. The heat dissipation system according to any one of claims 2 to 6, characterized in that: The intermediate layer comprises an intermediate layer body, a first surface of the intermediate layer body is a setting surface of the condensation zone of the heat expansion layer, and a second surface of the intermediate layer body is a setting surface of the heat exchange layer for heat exchange.

11. The heat dissipation system according to claim 10, characterized in that: The heat expansion layer has a base plate in contact with the chip; the intermediate layer also includes: an intermediate layer support column, which is connected to both ends of the base plate to form a space surrounded by the intermediate layer and the base plate; the dielectric phase change structure is arranged on the base plate and is in the space surrounded by the intermediate layer and the base plate.

12. The heat dissipation system according to claim 10, characterized in that: The heat exchange layer comprises: A heat sink, which is used to perform heat exchange with a cooling medium to remove heat conducted by the interlayer; The cooling medium inlet and outlet pipes include a cooling medium inlet pipe and a cooling medium outlet pipe.

13. The heat dissipation system according to claim 12, characterized in that: The heat exchange layer further includes a cover plate, which includes a cover plate cover surface and a cover plate support column; the cover plate support column is connected to the end of the second surface of the intermediary layer body to form a closed cavity surrounded by the cover plate cover surface, the cover plate support column and the second surface of the intermediary layer body, and the heat sink is placed in the closed cavity; Wherein, the inlet pipe and the outlet pipe are arranged on the cover surface of the cover plate; the cooling medium is driven by an external water pump, enters the closed cavity through the inlet pipe, flows through the heat sink and then flows out through the outlet pipe.

14. A chip module, characterized in that: The invention comprises at least one chip and a heat dissipation system as claimed in any one of claims 1 to 13.

15. An electronic device, characterized in that: Comprising the chip module as claimed in claim 14.

Citation Information

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