Image sensing device and high dynamic range image generation method thereof

Abstract

The invention provides an image sensing device and a high dynamic range image generation method thereof. The image sensing device comprises a pixel array, a reading circuit and a processing circuit. The pixel array comprises a plurality of sensing pixels, and each sensing pixel is electrically connected with a plurality of data reading lines. The readout circuit is electrically connected with the plurality of data read-out lines and the processing circuit, and the plurality of data read-out lines of each sensing pixel comprise a first data read-out line and a second data read-out line. Each sensing pixel outputs a first sensing signal corresponding to a first exposure time period in the row exposure time period through the first data read-out line, and each sensing pixel outputs a second sensing signal corresponding to a second exposure time period in the row exposure time period through the second data read-out line. The processing circuit generates a high dynamic range image based on the first sensing signal and the second sensing signal of each sensing pixel. Therefore, a high dynamic range image with good quality can be generated.

Description

Technical Field

[0001] The present invention relates to a high dynamic range image generation technology, and more particularly to an image sensing device and a high dynamic range image generation method thereof. Background Art

[0002] When a user uses an electronic device with a camera function to take a photo, if the scene contains both high-brightness and low-brightness, the captured image may have problems with dark areas being too dark or bright areas being overexposed. In other words, when the dynamic range of the scene is greater than the dynamic range of the image sensor, it means that there are extreme bright and dark areas in the scene, which exceed the color levels that the photosensitive component can record, so completely black or completely white blocks will appear in the photo.

[0003] In order to overcome this defect, one existing solution is to use an image sensor to continuously capture multiple images according to different exposure settings and synthesize these images into a high dynamic range (HDR) image. However, capturing multiple images may encounter problems such as hand shaking or movement of scene objects, resulting in multiple images that cannot be perfectly aligned, which in turn causes blurred areas to appear in the synthesized HDR image. In addition, another existing solution is to improve the image sensor. Different sensing pixel units of the image sensor can be designed to capture images according to different exposure settings, but the high dynamic range image generated by this method requires sacrificing image resolution. How to produce high dynamic range images with good quality is indeed the direction that technicians in this field are committed to. Summary of the invention

[0004] The invention relates to an electronic device and a high dynamic range image generation method thereof, which can generate a high dynamic range image with good quality.

[0005] An embodiment of the present invention provides an image sensing device, which includes a pixel array, a readout circuit and a processing circuit. The pixel array includes a plurality of sensing pixels, and each sensing pixel is electrically connected to a plurality of data readout lines. The readout circuit is electrically connected to the plurality of data readout lines, and the plurality of data readout lines of each sensing pixel include a first data readout line and a second data readout line. The processing circuit is electrically connected to the readout circuit. Each sensing pixel outputs a first sensing signal corresponding to a first exposure period within a row exposure period via the first data readout line, and each sensing pixel outputs a second sensing signal corresponding to a second exposure period within the row exposure period via the second data readout line. The time period length of the first exposure period is different from the time period length of the second exposure period. The processing circuit generates a high dynamic range image based on the first sensing signal and the second sensing signal of each sensing pixel.

[0006] The embodiment of the present invention provides a high dynamic range image generation method, which is applicable to an image sensing device including a plurality of sensing pixels and includes the following steps. Each sensing pixel performs exposure in a row exposure period in response to an exposure control signal, and each sensing pixel is electrically connected to a first data readout line and a second data readout line. Each sensing pixel outputs a first sensing signal corresponding to a first exposure period in the row exposure period via the first data readout line. Each sensing pixel outputs a second sensing signal corresponding to a second exposure period in the row exposure period via the second data readout line, wherein the time period length of the first exposure period is different from the time period length of the second exposure period. A high dynamic range image is generated based on the first sensing signal and the second sensing signal of each sensing pixel.

[0007] Based on the above, in the embodiment of the present invention, the same sensing pixel in the image sensing device can simultaneously generate sensing data corresponding to different exposure conditions. By performing pixel data fusion on multiple sensing data of each sensing pixel, a high dynamic range image with good quality can be generated without sacrificing image resolution. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 is a schematic diagram of an image sensing device according to an embodiment of the present invention;

[0009] Figure 2 is a schematic diagram of an image sensing device including a plurality of switches according to an embodiment of the present invention;

[0010] Figure 3 is a schematic diagram of a plurality of data readout lines of a row of sensing pixels according to an embodiment of the present invention;

[0011] Figure 4 is a schematic diagram of a first exposure period and a second exposure period according to an embodiment of the present invention;

[0012] Figure 5 is a schematic diagram of an image sensing device including a plurality of switches according to an embodiment of the present invention;

[0013] Figure 6 is a schematic diagram of a plurality of data readout lines of a row of sensing pixels according to an embodiment of the present invention;

[0014] Figure 7 is a schematic diagram of a first exposure period and a second exposure period according to an embodiment of the present invention;

[0015] Figure 8 is a flow chart of a method for generating a high dynamic range image according to an embodiment of the present invention.

[0016] Description of Reference Numerals

[0017] 100: image sensing device;

[0018] 110: pixel array;

[0019] 120: readout circuit;

[0020] 130: processing circuit;

[0021] 140: control circuit;

[0022] P1, P2: sensing pixels;

[0023] RL_1(1),RL_1(2),RL_x(1),RL_x(2): data readout lines;

[0024] Cr_1, Cr_y: exposure control signal;

[0025] 121: analog-to-digital converter;

[0026] Img_hdr: high dynamic range image;

[0027] SW2_1, SW2_x, SW1_1, SW1_x: switch device;

[0028] 131: data buffer;

[0029] 132: pixel fusion circuit;

[0030] 31: pixel amplifier;

[0031] Cs_1, Cs_2: control signal;

[0032] Amp1, Amp2: column amplifiers;

[0033] sd1: first digital sensing data;

[0034] sd2: second digital sensing data;

[0035] S810~S840: steps. DETAILED DESCRIPTION

[0036] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0037] Figure 1 is a schematic diagram of an image sensing device according to an embodiment of the present invention. Figure 1, the image sensing device 100 is used to provide an image sensing function. Specifically, the image sensing device 100 may include a photosensitive component, such as a charge coupled device (CCD), a complementary metal-oxide semiconductor (CMOS) component or other components, and the present invention is not limited to this. In some embodiments, the image sensing device 100 may form a camera module of an electronic device with other components (such as a lens, an aperture, etc.). The image sensing device 100 may include a pixel array 110, a readout circuit 120, a processing circuit 130 and a control circuit 140.

[0038] The pixel array 110 may include x*y sensing pixels (x and y are integers greater than 0), and these sensing pixels are arranged in x columns and y rows. For example, the pixel array 110 may include a sensing pixel P1 in the first column and the first row, and a sensing pixel P2 in the first row and the second column, and so on. These sensing pixels on the pixel array 110 may be a passive pixel sensor (PPS), an active pixel sensor (APS), or a digital pixel sensor (DPS), and the present invention is not limited thereto.

[0039] Each of these sensing pixels may include at least one photodiode for photoelectric conversion. The photodiode is used to convert light energy into electrical energy, and it can generate charge in response to the light irradiating the sensing pixel. The amount of charge generated by the photodiode is related to the intensity of the light and the exposure time. In addition, in some embodiments, other optical components, such as filters, etc., may be configured above the pixel array 110, and the present invention is not limited to this.

[0040] Each sensing pixel in the pixel array 110 is electrically connected to a plurality of data readout lines, and the plurality of data readout lines of each sensing pixel include a first data readout line and a second data readout line. For example, the sensing pixel P1 located in the first row and the first column of the pixel array 110 can be electrically connected to two data readout lines, namely, the data readout line RL_1(1) and the data readout line RL_1(2). It should be noted that Figure 1 The example in which each sensing pixel is connected to two data readout lines is used for explanation, but the present invention is not limited thereto. Each sensing pixel may be connected to more data readout lines. In addition, the same column of sensing pixels may be connected to the same plurality of data readout lines. For example, Figure 1As shown, the first row of sensing pixels can be electrically connected to the data readout line RL_1(1) and the data readout line RL_1(2), and the xth row of sensing pixels can be electrically connected to two data readout lines: the data readout line RL_x(1) and the data readout line RL_x(2).

[0041] The readout circuit 120 is electrically connected to a plurality of data readout lines of each sensing pixel. In some embodiments, the same row of sensing pixels may be connected to the same m data readout lines, and the readout circuit 120 is electrically connected to m*x data readout lines. In other words, the readout circuit 120 may be electrically connected to a plurality of data readout lines of each row of sensing pixels. For example, Figure 1 As shown, the readout circuit 120 can be electrically connected to 2*x data readout lines. The readout circuit 120 can be electrically connected to the data readout line RL_1(1) and the data readout line RL_1(2) of the first column of sensing pixels, and the readout circuit 120 can be electrically connected to the data readout line RL_x(1) and the data readout line RL_x(2) of the x-th column of sensing pixels. In some embodiments, the readout circuit 120 can include a column amplifier, an analog-to-digital converter (ADC) circuit, a data transmission circuit, or other circuits.

[0042] Each sensing pixel generates a charge according to its photodiode in response to light and outputs a sensing signal. These sensing signals are read out by the readout circuit 120 to generate corresponding digital sensing data. In the embodiment of the present invention, the readout circuit 120 can read out a plurality of sensing signals output by each sensing pixel via a plurality of data readout lines. For example, Figure 1 As shown, the readout circuit 120 can read out the first sensing signal outputted by the sensing pixel P1 via the data readout line RL_1(1) and the second sensing signal outputted via the data readout line RL_1(2). In some embodiments, the readout circuit 120 can read out the sensing signals outputted by each row of sensing pixels row by row.

[0043] The control circuit 140 is electrically connected to the pixel array 110 via a plurality of control lines. Figure 1 As shown, the control circuit 140 provides exposure control signals to each row of sensing pixels via y control lines. The start and end of the row exposure period of each row of sensing pixels are controlled by the corresponding exposure control signal. For example, the control circuit 140 provides the exposure control signal Cr_1 to the first row of sensing pixels via one control line, and the start and end of the row exposure period of the first row of sensing pixels are controlled by the exposure control signal Cr_1. The control circuit 140 provides the exposure control signal Cr_y to the y-th row of sensing pixels via another control line, and the start and end of the row exposure period of the y-th row of sensing pixels are controlled by the exposure control signal Cr_y. The photodiodes of each row of sensing pixels can be exposed during the row exposure period to continuously generate corresponding charges.

[0044] The processing circuit 130 is electrically connected to the readout circuit 120 to receive the digital sensing data output by the readout circuit 120. The processing circuit 130 is used to store the digital sensing data or perform image processing functions (such as tone mapping, cropping, rotation, brightness adjustment, contrast adjustment or others).

[0045] In an embodiment of the present invention, a plurality of data readout lines of each sensing pixel may output sensing signals corresponding to different exposure time periods. Specifically, each sensing pixel may output a first sensing signal corresponding to a first exposure time period within a row exposure time period via a first data readout line. Furthermore, each sensing pixel may output a second sensing signal corresponding to a second exposure time period within a row exposure time period via a second data readout line. The time period length of the first exposure time period is different from the time period length of the second exposure time period. The first exposure time period overlaps the second exposure time period. In other words, each sensing pixel may output a plurality of sensing signals corresponding to different exposure time periods via a plurality of data readout lines.

[0046] like Figure 1 As shown, the sensing pixel P1 can output a sensing signal corresponding to the first exposure period in the row exposure period through the data readout line RL_1(1). Also, the sensing pixel P1 can output a sensing signal corresponding to the second exposure period in the row exposure period through the data readout line RL_1(2).

[0047] Specifically, when each sensing pixel performs exposure in a row exposure period in response to an exposure control signal, a plurality of sensing signals corresponding to different exposure time lengths may be generated in the same row exposure period. For example, the sensing pixel P1 may simultaneously generate a first sensing signal corresponding to a first exposure period and a second sensing signal corresponding to a second exposure period. For example, the period length of the first exposure period is, for example, 33 ms, and the period length of the second exposure period is, for example, 16 ms.

[0048] In some embodiments, the induced charges corresponding to different exposure periods can be stored simultaneously by multiple capacitors in each sensing pixel. Based on this, each sensing pixel can output the sensing signals corresponding to different exposure periods through multiple data readout lines according to the induced charges corresponding to different exposure periods stored in these capacitors. Alternatively, in some embodiments, a switch device can be set on a certain data readout line of each sensing pixel. By controlling the cut-off and conduction of the switch device, the readout circuit 140 can read the sensing signals corresponding to different exposure periods through multiple data readout lines.

[0049] Based on this, the processing circuit 140 can generate a high dynamic range image Img_hdr based on the first sensing signal and the second sensing signal of each sensing pixel. That is, the processing circuit 140 can generate a high dynamic range image Img_hdr based on a plurality of sensing signals corresponding to different exposure periods of each sensing pixel. In detail, based on the first sensing signal and the second sensing signal of each sensing pixel, the processing circuit 140 can obtain first digital sensing data of the first sensing signal and second digital sensing data of the second sensing signal. Therefore, the processing circuit 140 can perform pixel fusion processing on the first digital sensing data and the second digital sensing data of each sensing pixel, thereby generating a high dynamic range image Img_hdr with a higher pixel bit count.

[0050] Figure 2 is a schematic diagram of an image sensing device including a plurality of switches according to an embodiment of the present invention. Figure 2 , the image sensing device 200 may further include a plurality of second switch devices. The second data readout line of each sensing pixel is electrically connected to the readout circuit 120 via a corresponding one of the plurality of second switch devices. For example, the data readout line RL_1(2) of the first row of sensing pixels is electrically connected to the readout circuit 120 via the switch device SW2_1. The data readout line RL_x(2) of the xth row of sensing pixels is electrically connected to the readout circuit 120 via the switch device SW2_x.

[0051] In response to each second switch device being turned on during the second exposure period, each sensing pixel outputs a second sensing signal corresponding to the second exposure period via the second data readout line. For example, in response to the switch device SW2_1 being turned on during the corresponding second exposure period, the sensing pixel P1 may output a sensing signal corresponding to the second exposure period via the data readout line RL_1(2).

[0052] In detail, the photodiode of each sensing pixel will continue to generate a corresponding amount of charge in response to the received accumulated photons during the corresponding row exposure period. Based on the conduction of the second switch device during the second exposure period and the cut-off at the expiration of the second exposure period, the second sensing signal output by the second data readout line can be made independent of the amount of photons received by the photodiode after the second exposure period, thereby generating a second sensing signal corresponding to the short exposure period. On the other hand, due to the absence of the switch device, the first sensing signal output by the first data readout line is independent of the amount of photons received by the photodiode after the second exposure period, thereby generating a first sensing signal corresponding to the long exposure period.

[0053] In some embodiments, the readout circuit 120 includes a plurality of first column amplifiers corresponding to a plurality of first data readout lines and a plurality of second column amplifiers corresponding to a plurality of second data readout lines, each first column amplifier is used to perform column amplification processing on the first sensing signal, and each second column amplifier is used to perform column amplification processing on the second sensing signal. That is, each data readout line can be connected to a corresponding column amplifier.

[0054] In some embodiments, the readout circuit 120 includes an analog-to-digital converter 121. The analog-to-digital converter 121 converts the first sensing signal of each sensing pixel into a first digital sensing data, and converts the second sensing signal of each sensing pixel into a second digital sensing data.

[0055] In some embodiments, the processing circuit 130 includes a data register 131. The data register 131 is used to record the first digital sensing data and the second digital sensing data of each sensing pixel.

[0056] In some embodiments, the processing circuit 130 includes a pixel fusion circuit 132. The plurality of sensing pixels include a first sensing pixel, and the pixel fusion circuit 132 generates an image pixel of a high dynamic range image according to first digital sensing data and second digital sensing data of the first sensing pixel.

[0057] In order to more clearly explain the principle of this embodiment, a row of sensing pixels will be used as an example for explanation below. A person with ordinary knowledge in the art can clearly understand the operating principle of each row of sensing pixels after referring to the following description. Figure 3 FIG. 4 is a schematic diagram of a plurality of data readout lines of a row of sensing pixels according to an embodiment of the present invention. Figure 4 is a schematic diagram of a first exposure period and a second exposure period according to an embodiment of the present invention. Figure 3 and Figure 4 .

[0058] The data readout line RL_1(2) of the first row of sensing pixels can be electrically connected to the readout circuit 120 via the switch device SW2_1. The switch device SW2_1 is turned on or off in response to the level of the control signal Cs_2. The switch device SW2_1 can be implemented by at least one transistor, and the gate of the transistor is used to receive the control signal Cs_2. In response to the exposure control signal Cr_1, the sensing pixel P1 can generate a sensing signal through the pixel amplifier 31 in response to the photons accumulated and received by the photodiode during the corresponding row exposure period.

[0059] After a first exposure period that is the same as the row exposure period, the data readout line RL_1(1) can output a sensing signal corresponding to the first exposure period. That is, the sensing signal output by the data readout line RL_1(1) is generated based on the photons accumulated and received by the photodiode in the first exposure period. On the other hand, after a second exposure period in the row exposure period, the control signal Cs_2 switches the level, causing the switch device SW2_1 to be turned off after the second exposure period. In response to the turning off of the switch device SW2_1 before the expiration of the row exposure period, the data readout line RL_1(2) can output a sensing signal corresponding to the second exposure period. That is, the sensing signal output by the data readout line RL_1(2) is generated based on the photons accumulated and received by the photodiode in the second exposure period. Figure 4 As shown, the row exposure period is the same as the first exposure period, and the first exposure period is longer than the second exposure period.

[0060] In addition, the readout circuit 120 includes a column amplifier Amp1 corresponding to the data readout line RL_1(1) and a plurality of column amplifiers Amp2 corresponding to the data readout line RL_1(2). The column amplifier Amp1 is used to perform column amplification processing on the sensing signal of the data readout line RL_1(1), and the column amplifier Amp2 is used to perform column amplification processing on the sensing signal of the data readout line RL_1(2). The analog-to-digital converter 121 converts the sensing signal of the data readout line RL_1(1) into the first digital sensing data sd1, and converts the sensing signal of the data readout line RL_1(2) into the second digital sensing data sd2.

[0061] The data buffer 131 is used to record the first digital sensing data sd1 and the second digital sensing data sd2 of the sensing pixel P1. The pixel fusion circuit 132 generates an image pixel of the high dynamic range image according to the first digital sensing data sd1 and the second digital sensing data sd2 of the sensing pixel P1. The first digital sensing data sd1 and the second digital sensing data sd2 of the sensing pixel P1 are generated in the same frame capture period based on different exposure conditions. In the present embodiment, the pixel fusion circuit 132 can generate an HDR image by fusing the first digital sensing data and the second digital sensing data of each sensing pixel based on the known HDR image processing technology, and the details thereof are not repeated here.

[0062] Figure 5 is a schematic diagram of an image sensing device including a plurality of switches according to an embodiment of the present invention. Figure 5 ,and Figure 2Different from the embodiment, the image sensing device 500 may further include a plurality of first switch devices. The first data readout line of each sensing pixel is electrically connected to the readout circuit 120 via a corresponding one of the plurality of first switch devices. For example, the data readout line RL_1(1) of the first column of sensing pixels is electrically connected to the readout circuit 120 via the switch device SW1_1. The data readout line RL_x(1) of the x-th column of sensing pixels is electrically connected to the readout circuit 120 via the switch device SW1_x.

[0063] In response to each first switch device being turned on during the first exposure period, each sensing pixel outputs a first sensing signal corresponding to the first exposure period via the first data readout line. For example, in response to the switch device SW1_1 being turned on during the corresponding first exposure period, the sensing pixel P1 may output a sensing signal corresponding to the first exposure period via the data readout line RL_1(1). In this way, by controlling the cut-off and on-off of the plurality of first switch devices, the time length of the first exposure period may be adjusted, thereby making the first exposure period different from the row exposure period.

[0064] In order to more clearly explain the principle of this embodiment, a row of sensing pixels will be used as an example for explanation below. A person with ordinary knowledge in the art can clearly understand the operating principle of each row of sensing pixels after referring to the following description. Figure 6 FIG. 4 is a schematic diagram of a plurality of data readout lines of a row of sensing pixels according to an embodiment of the present invention. Figure 7 is a schematic diagram of a first exposure period and a second exposure period according to an embodiment of the present invention. Figure 6 and Figure 7 .

[0065] The data readout line RL_1(1) of the first row of sensing pixels can be electrically connected to the readout circuit 120 via the switch device SW1_1. The switch device SW1_1 can be implemented by at least one transistor. The switch device SW1_1 is turned on or off in response to the level of the control signal Cs_1. The data readout line RL_1(2) of the first row of sensing pixels can be electrically connected to the readout circuit 120 via the switch device SW2_1. The switch device SW2_1 is turned on or off in response to the level of the control signal Cs_2. In response to the exposure control signal Cr_1, the sensing pixel P1 can generate a sensing signal through the pixel amplifier 31 in response to the photons accumulated and received by the photodiode during the corresponding row exposure period.

[0066] After the first exposure period in the row exposure period, the control signal Cs_1 switches the level, causing the switch device SW1_1 to be turned off after the first exposure period. In response to the switch device SW1_1 being turned off before the row exposure period expires, the data readout line RL_1(1) can output a sensing signal corresponding to the first exposure period. That is, the sensing signal output by the data readout line RL_1(1) is generated based on the accumulated photons received by the photodiode in the first exposure period. Similarly, in response to the switch device SW2_1 being turned off before the row exposure period expires, the data readout line RL_1(2) can output a sensing signal corresponding to the second exposure period. That is, the sensing signal output by the data readout line RL_1(2) is generated based on the accumulated photons received by the photodiode in the second exposure period. Figure 7 As shown, the row exposure period is longer than the first exposure period, and the first exposure period is longer than the second exposure period.

[0067] Figure 8 is a flow chart of a method for generating a high dynamic range image according to an embodiment of the present invention. Figure 8 In step S810, each sensing pixel performs exposure in a row exposure period in response to an exposure control signal. In step S820, each sensing pixel outputs a first sensing signal corresponding to a first exposure period in the row exposure period via a first data readout line. In step S830, each sensing pixel outputs a second sensing signal corresponding to a second exposure period in the row exposure period via a second data readout line. In step S840, a high dynamic range image is generated based on the first sensing signal and the second sensing signal of each sensing pixel. However, Figure 8 The various steps have been described in detail above and will not be repeated here.

[0068] In summary, in the embodiment of the present invention, the same sensing pixel in the image sensing device can simultaneously generate multiple sensing signals corresponding to different exposure periods, and the reading circuit can read out the multiple sensing signals corresponding to different exposure periods via the corresponding multiple data reading lines. Afterwards, by performing pixel data fusion on the multiple sensing data of each sensing pixel, a high dynamic range image with good quality can be generated without sacrificing image resolution, and blurry high dynamic range images can be avoided.

[0069] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. An image sensing device, characterized in that: include: A pixel array, comprising a plurality of sensing pixels, wherein each of the plurality of sensing pixels is electrically connected to a plurality of data readout lines; a readout circuit electrically connected to the plurality of data readout lines, wherein the plurality of data readout lines of each of the plurality of sensing pixels include a first data readout line and a second data readout line; and a processing circuit electrically connected to the readout circuit, Each of the plurality of sensing pixels outputs a first sensing signal corresponding to a first exposure period within a row exposure period via the first data readout line. Each of the plurality of sensing pixels outputs a second sensing signal corresponding to a second exposure period within the row exposure period via the second data readout line, wherein the length of the first exposure period is different from the length of the second exposure period. The processing circuit generates a high dynamic range image based on the first sensing signal and the second sensing signal of each of the plurality of sensing pixels.

2. The image sensing device according to claim 1, wherein: Also included are a plurality of first switch devices, wherein the first data readout line of each of the plurality of sensing pixels is electrically connected to the readout circuit via a corresponding one of the plurality of first switch devices, In response to each of the plurality of first switch devices being turned on during the first exposure period, each of the plurality of sensing pixels outputs the first sensing signal corresponding to the first exposure period via the first data readout line.

3. The image sensing device according to claim 1, wherein: Also included are a plurality of second switch devices, wherein the second data readout line of each of the plurality of sensing pixels is electrically connected to the readout circuit via a corresponding one of the plurality of second switch devices, In response to each of the plurality of second switch devices being turned on during the second exposure period, each of the plurality of sensing pixels outputs the second sensing signal corresponding to the second exposure period via the second data readout line.

4. The image sensing device according to claim 1, wherein: The row exposure period is the same as the first exposure period, and the first exposure period is longer than the second exposure period.

5. The image sensing device according to claim 1, wherein: The row exposure period is longer than the first exposure period, and the first exposure period is longer than the second exposure period.

6. The image sensing device according to claim 1, wherein: The readout circuit includes a plurality of first column amplifiers corresponding to the plurality of first data readout lines and a plurality of second column amplifiers corresponding to the plurality of second data readout lines. Each of the first column amplifiers is used to amplify the first sensing signal, and each of the second column amplifiers is used to amplify the second sensing signal.

7. The image sensing device according to claim 1, wherein: The readout circuit includes an analog-to-digital converter that converts the first sensing signal of each of the plurality of sensing pixels into first digital sensing data and converts the second sensing signal of each of the plurality of sensing pixels into second digital sensing data.

8. The image sensing device according to claim 7, characterized in that: The processing circuit includes a data buffer, and the data buffer is used to record the first digital sensing data and the second digital sensing data of each of the plurality of sensing pixels.

9. The image sensing device according to claim 7, wherein: The processing circuit includes a pixel fusion circuit, the plurality of sensing pixels include a first sensing pixel, and the pixel fusion circuit generates an image pixel of the high dynamic range image according to the first digital sensing data and the second digital sensing data of the first sensing pixel.

10. A method for generating a high dynamic range image, applicable to an image sensing device comprising a plurality of sensing pixels, characterized in that: include: Each of the plurality of sensing pixels responds to an exposure control signal to perform exposure in a row exposure period, wherein each of the plurality of sensing pixels is electrically connected to a first data readout line and a second data readout line; Outputting a first sensing signal corresponding to a first exposure period within the row exposure period by each of the plurality of sensing pixels via a first data readout line; Outputting a second sensing signal corresponding to a second exposure period within the row exposure period by each of the plurality of sensing pixels through a second data readout line, wherein the length of the first exposure period is different from the length of the second exposure period; as well as A high dynamic range image is generated based on the first sensing signal and the second sensing signal of each of the plurality of sensing pixels.

Images