Detection method and system for bubble defect of basin-type insulator, electronic equipment and storage medium

Abstract

The invention provides a basin-type insulator bubble defect detection method and system, electronic equipment and a storage medium, and relates to the technical field of insulation equipment fault diagnosis, and the method comprises the steps: building an ultrasonic stress detection system of a basin-type insulator; the method comprises the following steps: acquiring a defect-free basin-type insulator, performing stress detection, calculating a stress change rate, fitting, summarizing and performing probability statistics to form a defect-free regression curve set; obtaining a defective basin-type insulator to carry out stress detection, calculating a stress change rate, fitting and summarizing into a training fitting curve set; the defect-free regression curve set and the training fitting curve set are compared and checked, and an actual qualified threshold value is obtained; carrying out stress detection on the basin-type insulator to be detected to calculate a stress change rate, fitting and summarizing the stress change rate into a test fitting curve set; and comparing the defect-free regression curve set with the test fitting curve set to determine the position of the bubble defect. According to the invention, the detection cost of the basin-type insulator can be reduced, the efficiency is improved, the accuracy of the detection result is high, and the portability is strong.

Description

Background Art

[0002] The pot insulator is an important component of the gas insulated switchgear (GIS) and the gas insulated metal-enclosed transmission line (GIL), which has the functions of insulation, support and isolation of the gas chamber. The pot insulator is mainly made of epoxy resin using a casting process. Due to process limitations, internal bubble defects may occur during the production process. During the use of pot insulators with internal defects, they are prone to partial discharge and deterioration due to high voltage, which will cause safety hazards and threaten the safe and stable operation of the power system. Therefore, it is necessary to test the pot insulators leaving the factory to screen out the pot insulators with bubble defects to prevent them from entering the market.

[0003] At present, the commonly used method for detecting internal defects of pot-type insulators is X-ray detection. This method transmits X-rays to penetrate the pot-type insulator, and forms an image on the imaging plate according to the difference in the degree of X-ray absorption by different materials, so as to judge whether there are defects inside the insulator. During the detection process, if there is a bubble defect inside the pot-type insulator, it will show a grayscale or morphological feature different from the normal part in the X-ray image, so that the inspector can identify the location and approximate shape of the bubble defect.

[0004] However, X-ray inspection equipment requires professional operators to operate and maintain. If every pot-type insulator shipped out of the factory is subjected to X-ray inspection, it will consume a lot of manpower and material resources, which will greatly increase production costs and reduce production efficiency. Therefore, it is not suitable for internal defect detection of large-scale pot-type insulator products. Secondly, radiation is generated during the X-ray inspection process, which poses a potential threat to the health of operators. Strict protective measures need to be taken, which further increases the complexity and cost of inspection. In addition, X-ray inspection has limited sensitivity for tiny bubble defects, and may miss detection, resulting in pot-type insulators with tiny bubble defects being misjudged as qualified products, making it difficult to achieve high-precision detection of tiny bubbles inside pot-type insulators. Summary of the invention

[0005] In view of the problem that the use of X-ray detection method to detect internal defects of pot-type insulators is not suitable for internal defect detection of large quantities of pot-type insulator products, and it is difficult to achieve high-precision detection of tiny bubbles inside pot-type insulators, the invention provides a method, system, electronic equipment and storage medium for detecting bubble defects in pot-type insulators, which can reduce the detection cost of pot-type insulators, improve detection efficiency and reduce safety hazards; can accurately detect bubble defects inside pot-type insulators, and has high detection sensitivity and reliability; can be applicable to pot-type insulators of various specifications at various voltage levels, and has strong portability.

[0006] In a first aspect, the present invention provides a method for detecting bubble defects in a basin-type insulator, the steps comprising: S1. Establish an ultrasonic stress detection system for pot-type insulators; S2. Obtain M defect-free pot-type insulators with the same specifications as the pot-type insulator to be tested, select N test points on the defect-free pot-type insulators, and use the ultrasonic stress detection system of the pot-type insulator to perform K tests with different penetration depths at each test point. The penetration depth is Incremental, The thickness of the defect-free pot insulator is calculated, and the stress change rate between adjacent penetration depths is fitted into a defect-free fitting curve. Then, probability statistics are performed based on the defect-free fitting curve to obtain a regression curve of the stress change rate distribution at each detection point, forming a defect-free regression curve set. S3. Obtain J defective pot insulators with the same specifications as the pot insulator to be tested, and perform stress detection on the defective pot insulator using the same detection points and detection methods as in step S2, calculate the stress change rate between adjacent penetration depths, fit the training fitting curves for each detection point, and summarize them into a training fitting curve set; S4. Compare the defect-free regression curve set with the curves in the training fitting curve set to obtain an actual qualified threshold; S5. Stress detection is performed on the tested pot-type insulator using the same detection points and detection methods as in step S2, and the stress change rate between adjacent penetration depths is calculated, and the test fitting curves are fitted to the test points, and the test fitting curves are summarized as a set of test fitting curves; S6. Compare the curves in the defect-free regression curve set with the curves in the test fitting curve set, determine the defect location through the actual qualified threshold, determine the abnormal point, and determine the location of the bubble defect according to the location of the abnormal point.

[0007] It should be further explained that, in step S1, the ultrasonic stress detection system of the pot-type insulator includes an ultrasonic signal generator, the output end of the ultrasonic signal generator is electrically connected to the input end of the high-voltage amplifier, and also includes an ultrasonic probe, the ultrasonic probe includes a transmitting probe, a receiving probe and an ultrasonic wedge, the output end of the high-voltage amplifier is electrically connected to the transmitting probe, the receiving probe is electrically connected to the input end of the signal amplifier, and the output end of the signal amplifier is connected to the oscilloscope.

[0008] It should be further explained that, in step S2, the non-defective pot-type insulator is a pot-type insulator that has been confirmed to have no internal defects after X-ray inspection; In step S3, the defective pot-type insulator is a pot-type insulator that is confirmed to have bubble defects inside after X-ray detection, and the shape, size and position of the bubble defects inside are determined.

[0009] It should be further explained that the expression of stress change rate is:

[0010] In the formula, The frequency is The penetration depth of ultrasound; The frequency is The penetration depth of ultrasound; The frequency is the penetration depth The average stress at The average stress measured by ultrasonic wave; The frequency is the penetration depth The average stress at The average stress measured by ultrasonic wave; The penetration depth is Change to The stress change rate at time ; In step S2, The expression of stress change rate between adjacent penetration depths at the detection point is:

[0011] In the formula, For pot-type insulators The thickness of each test point; For the The first of the detection points penetration depth; For the Among the detection points, the penetration depth is The average stress measured at For the Among the detection points, the penetration depth is given by Change to The stress change rate.

[0012] It should be further explained that the specific operations of step S4 are: Defects are judged and located through the artificially set qualified threshold, suspected abnormal points are judged, and then the suspected abnormal points are checked using the actual position of the bubble defect of the defective basin insulator, and the qualified threshold is adjusted to obtain the actual qualified threshold; Among them, if the ratio of the data at a position in the fitting curve set to the data at the corresponding position in the defect-free regression curve set exceeds the qualified threshold, the position is judged as a suspected abnormal point.

[0013] It should be further explained that the steps also include: S7. Take the position of the previous normal point in the curve where the abnormal point is located as the starting point and the position of the next normal point as the end point, set the refined penetration depth difference, take the refined penetration depth difference as the distance between two adjacent penetration depths, perform longitudinal refined stress detection again on the position between the starting point and the end point, fit the measured data as the curve to be compared, compare it with the curve at the corresponding position in the defect-free regression curve set, judge and locate the defect through the actual qualified threshold, judge the abnormal point and determine the two end points where the bubble defect appears, and then determine the longitudinal size of the bubble defect; S8. With the midpoint of the line connecting the two end points of the bubble defect as the center and the radius set manually, a circular refined detection area is drawn, and m refined detection points are reset in the refined detection area. Stress detection is performed on each refined detection point using the same detection method as step S3, and the stress change rate between adjacent penetration depths is calculated. Then, a refined fitting curve of the stress change rate of each refined detection point as a inverse of the penetration depth is fitted. Each refined fitting curve is used as a curve to be compared and compared with the curve closest to the defect-free regression curve set. The bubble defect is judged and located using the actual qualified threshold, and the abnormal point is judged, thereby determining the lateral size of the bubble defect and the shape of the bubble defect.

[0014] It should be further explained that the defect-free fitting curve, the training fitting curve, the test fitting curve and the refined fitting curve are all curves showing the stress change rate of each detection point as a function of the penetration depth.

[0015] It should be further explained that, in step S6, if the ratio of the data at a position in the test fitting curve set to the data at the corresponding position in the defect-free regression curve set exceeds the actual qualified threshold, the position is judged to be an abnormal point; In steps S7-S8, if the ratio of the data at a position in the curve to be compared to the data at the corresponding position in the defect-free regression curve set exceeds the qualified threshold, the position is determined to be an abnormal point.

[0016] It should be further explained that, in step S7, the difference in the refined penetration depth is 0.1-0.5 mm; in step S8, the radius of the refined detection area is 3-6 mm, and the distance between two adjacent refined detection points is 0.1-0.5 mm.

[0017] In a second aspect, the present invention provides a system for detecting bubble defects in a basin-type insulator, which is used to implement the above-mentioned method for detecting bubble defects in a basin-type insulator, comprising: An ultrasonic stress detection module, used for detecting the stress of a pot-type insulator at different penetration depths using an ultrasonic stress detection system of a pot-type insulator; The defect-free pot insulator analysis module is used to calculate the stress change rate in the defect-free pot insulator, fit the defect-free fitting curve and summarize it into a defect-free fitting curve set, and then perform probability statistics to obtain the stress change rate distribution regression curve of each detection point to form a defect-free regression curve set; Defective pot insulator analysis module, used to calculate the stress change rate in the defective pot insulator, fit the training fitting curve and summarize it into a training fitting curve set; A qualified threshold determination module is used to compare the defect-free regression curve set with the curves in the training fitting curve set to obtain an actual qualified threshold; The analysis module of the pot-type insulator to be tested is used to calculate the stress change rate in the pot-type insulator to be tested, fit the test fitting curve and summarize it into a test fitting curve set, then compare the defect-free regression curve set with the curves in the test fitting curve set, and locate the defects through the actual qualified threshold, judge the abnormal points and determine the location of the bubble defect.

[0018] In a third aspect, the present invention provides an electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor is configured to implement the steps of the above-mentioned method for detecting bubble defects in basin-type insulators when executing the computer program.

[0019] In a fourth aspect, the present invention provides a storage medium having a computer program stored thereon, and when the computer program is executed by a processor, the steps of the above-mentioned method for detecting bubble defects in basin-type insulators are implemented.

[0020] The beneficial effects of the present invention are: 1. The method for detecting bubble defects in pot-type insulators provided by the present invention establishes an ultrasonic stress detection system for pot-type insulators, uses samples of non-defective and defective pot-type insulators to collect data, analyze and determine thresholds, and detects and judges the pot-type insulators to be tested, thereby judging whether there are bubble defects inside the pot-type insulators and the location of the bubble defects. Compared with the prior art, the ultrasonic stress detection system has a relatively low cost and does not require professional operators to perform complex operations, thereby reducing the detection cost, improving the detection efficiency, and avoiding radiation hazards and reducing safety hazards.

[0021] 2. The present invention uses ultrasonic waves of different frequencies to obtain stresses within different depths of pot-type insulators. The stress distribution data contains rich information and can accurately characterize the internal state of the insulator. Through the definition of stress change rate parameters and multi-step data analysis and processing, the bubble defects inside the pot-type insulator can be accurately detected, especially for micro bubble defects, with higher detection sensitivity, reducing the occurrence of missed detection and improving the reliability of the detection results, which is of great significance for ensuring the operation of GIS / GIL and reducing economic losses.

[0022] 3. The detection method of the present invention is applicable to pot-type insulators of various specifications at various voltage levels and has strong portability. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solution of the present invention, the accompanying drawings required for use in the description will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.

[0024] Figure 1 The figure is a flow chart of a method for detecting bubble defects in pot-type insulators according to an embodiment of the present invention.

[0025] Figure 2 The figure is a schematic block diagram of a system for detecting bubble defects in pot-type insulators according to an embodiment of the present invention.

[0026] Figure 3 It is a schematic diagram of the hardware structure of an electronic device in one embodiment of the present invention. DETAILED DESCRIPTION

[0027] In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, the technical scheme of the present invention will be clearly and completely described below in conjunction with the drawings in this specific embodiment. Obviously, the embodiments described below are only part of the embodiments of the present invention, not all of them. Based on the embodiments in this patent, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this patent.

[0028] The method for detecting bubble defects in pot-type insulators involved in the present application is mainly aimed at the technical field of fault diagnosis of insulating equipment. By establishing an ultrasonic stress detection system for pot-type insulators, using samples of non-defective and defective pot-type insulators for data collection, analysis and threshold determination, a method for detecting and judging the pot-type insulator to be tested is used to determine whether there are bubble defects inside the pot-type insulator and the location of the bubble defects. Compared with the prior art, the cost of the ultrasonic stress detection system is relatively low, and no professional operator is required to perform complex operations, which reduces the detection cost and improves the detection efficiency, while avoiding radiation hazards and reducing safety hazards; using ultrasonic waves of different frequencies, the stress within different depth ranges of the pot-type insulator can be obtained, and the stress distribution data contains rich information, which can accurately characterize the state inside the insulator. Through the definition of stress change rate parameters and multi-step data analysis and processing, the bubble defects inside the pot-type insulator can be accurately detected, especially for micro-bubble defects, with higher detection sensitivity, reducing the occurrence of missed detection, and improving the reliability of the detection results, which is of great significance for ensuring the operation of GIS / GIL and reducing economic losses; the detection method of the present application can be applied to pot-type insulators of various specifications at various voltage levels, and has strong portability.

[0029] The method for detecting bubble defects in pot-type insulators involved in the present application mainly aims at the technical problem that the use of X-ray detection method to detect internal defects of pot-type insulators is not suitable for internal defect detection of large-scale pot-type insulator products, and it is difficult to achieve high-precision detection of tiny bubbles inside pot-type insulators.

[0030] The following is a detailed description of the method for detecting bubble defects in a basin-type insulator involved in the present application. For the purpose of illustration rather than limitation, specific details such as specific system structures and technologies are provided to facilitate a thorough understanding of the embodiments of the present application. However, it should be clear to those skilled in the art that the present application can also be implemented in other embodiments without these specific details.

[0031] In the method for detecting bubble defects of basin-type insulators involved in the present application, the term "comprising" used indicates the existence of the described features, wholes, steps, operations, elements and / or components, but does not exclude the existence or addition of one or more other features, wholes, steps, operations, elements, components and / or their collections. The terms "comprising", "including", "having" and their variations all mean "including but not limited to", unless otherwise specifically emphasized.

[0032] In order to clearly describe the technical solution of the present application, the words "first", "second" and the like are used to distinguish the same or similar items with substantially the same functions and effects. Those skilled in the art can understand that the words "first", "second" and the like do not limit the quantity and execution order, and the words "first", "second" and the like do not necessarily limit the difference.

[0033] The phrases such as "one embodiment" or "some embodiments" described in the present application mean that the specific features, structures or characteristics described in the embodiment are included in one or more embodiments of the present application. Therefore, the phrases such as "in one embodiment", "in some embodiments", "in some other embodiments", "in some other embodiments" etc. that appear in different places in the present application do not necessarily refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in other ways.

[0034] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0035] The method for detecting bubble defects in pot-type insulators provided in the embodiment of the present invention is executed by a computer device, and accordingly, the system for detecting bubble defects in pot-type insulators runs in the computer device.

[0036] Figure 1 1 is a flow chart of a method for detecting bubble defects in a basin-type insulator according to an embodiment of the present invention. Figure 1 The execution subject may be a detection system for bubble defects of basin-type insulators. According to different requirements, the order of the steps in the flow chart may be changed, and some may be omitted.

[0037] like Figure 1 As shown, the method for detecting bubble defects of the basin-type insulator includes: Step S1, establishing an ultrasonic stress detection system for pot-type insulators.

[0038] The establishment of an ultrasonic stress detection system for pot-type insulators can accurately obtain the stress of pot-type insulators at different penetration depths in subsequent steps, providing a hardware foundation for subsequent detection.

[0039] In some specific embodiments, the ultrasonic stress detection system of the basin insulator includes an ultrasonic signal generator, the output end of the ultrasonic signal generator is electrically connected to the input end of the high-voltage amplifier, and also includes an ultrasonic probe, the ultrasonic probe includes a transmitting probe, a receiving probe and an ultrasonic wedge, the output end of the high-voltage amplifier is electrically connected to the transmitting probe, the receiving probe is electrically connected to the input end of the signal amplifier, and the output end of the signal amplifier is connected to the oscilloscope.

[0040] The specific components of the ultrasonic stress detection system and their connection relationships are clarified to ensure that the detection system can stably and accurately obtain stress information of pot-type insulators at different penetration depths, providing reliable hardware support for the entire detection method and ensuring the accuracy and effectiveness of the detection data.

[0041] Step S2, obtaining M non-defective pot-type insulators with the same specifications as the pot-type insulator to be tested, selecting N detection points on the non-defective pot-type insulators, and using the ultrasonic stress detection system of the pot-type insulator to perform K times of detection with different penetration depths at each detection point, wherein the penetration depth is Incremental, The thickness of the defect-free pot insulator is calculated, and the stress change rate between adjacent penetration depths is fitted into a defect-free fitting curve. Then, probability statistics are performed based on the defect-free fitting curve to obtain the regression curve of the stress change rate distribution of each detection point, forming a defect-free regression curve set.

[0042] The defect-free fitting curve is a curve showing the stress change rate of each detection point as a function of the penetration depth.

[0043] Obtain defect-free pot insulators and perform detection, calculation, fitting and statistical operations to establish a set of defect-free regression curves as the standard for subsequent comparison and judgment. By processing a large amount of defect-free sample data, the reliability and accuracy of the test results can be improved, interference from other factors can be effectively eliminated, and abnormal stress changes caused by bubble defects can be accurately identified.

[0044] In some specific embodiments, the defect-free pot-type insulator is a pot-type insulator that is confirmed to have no internal defects after X-ray inspection.

[0045] Using X-ray detection as a preliminary confirmation method can identify the internal defects of pot-type insulators, lay the foundation for the subsequent establishment of accurate detection standards and judgment basis, and improve the credibility of the detection results.

[0046] In some specific embodiments, the expression of stress change rate is:

[0047] In the formula, The frequency is The penetration depth of ultrasound; The frequency is The penetration depth of ultrasound; The frequency is the penetration depth The average stress at The average stress measured by ultrasonic wave; The frequency is the penetration depth The average stress at The average stress measured by ultrasonic wave; The penetration depth is Change to The stress change rate at time ; No. The expression of stress change rate between adjacent penetration depths at the detection point is:

[0048] In the formula, For pot-type insulators The thickness of each test point; For the The first of the detection points penetration depth; For the Among the detection points, the penetration depth is The average stress measured at For the Among the detection points, the penetration depth is given by Change to The stress change rate.

[0049] Clarifying the calculation expression of stress change rate can make the calculation of stress change rate more in line with actual detection conditions, improve the accuracy of stress change rate parameters, and thus provide strong support for more accurate detection of bubble defects.

[0050] Step S3, obtaining J defective pot-type insulators with the same specifications as the pot-type insulator to be tested, performing stress detection on the defective pot-type insulators using the same detection points and detection method as step S2, calculating the stress change rate between adjacent penetration depths, fitting them into training fitting curves for each detection point, and summarizing them into a training fitting curve set.

[0051] The training fitting curve is a curve showing the stress change rate of each detection point as a function of the penetration depth.

[0052] The defective pot-type insulators are tested and processed in the same way to obtain a training fitting curve set, which is used to compare with the defect-free regression curve set to provide a reference for accurately judging the defect conditions of the pot-type insulators to be tested. By comparing and analyzing defect-free samples with actual defective samples, the setting of qualified thresholds in subsequent steps can be more in line with the actual situation, improving the practicality and effectiveness of the detection method.

[0053] In some specific embodiments, the defective pot-type insulator is a pot-type insulator that is confirmed to have a bubble defect inside after X-ray inspection, and the shape, size and position of the bubble defect inside are determined.

[0054] Step S4, comparing the defect-free regression curve set with the curves in the training fitting curve set to obtain an actual qualified threshold value.

[0055] In some specific embodiments, the specific operations of step S4 are: Defects are judged and located through the artificially set qualified threshold, suspected abnormal points are judged, and then the suspected abnormal points are checked using the actual position of the bubble defect of the defective basin insulator, and the qualified threshold is adjusted to obtain the actual qualified threshold; If the ratio of the data at a position in the fitting curve set to the data at the corresponding position in the defect-free regression curve set exceeds the qualified threshold, the position is judged as a suspected abnormal point; Step S5, performing stress detection on the pot-type insulator to be tested using the same detection points and detection method as step S2, calculating the stress change rate between adjacent penetration depths, fitting the test fitting curves of each detection point, and summarizing them into a test fitting curve set.

[0056] The test fitting curve is a curve showing the stress change rate of each detection point as a function of the penetration depth.

[0057] The pot-type insulator to be tested is tested and data processed to obtain a test fitting curve set, which is prepared for comparison with a defect-free regression curve set in subsequent steps, and provides a basis for determining whether the pot-type insulator to be tested has bubble defects and the defect location.

[0058] Step S6, compare the curves in the defect-free regression curve set with the curves in the test fitting curve set, determine the defect location through the actual qualified threshold, determine the abnormal point, and determine the location of the bubble defect according to the location of the abnormal point.

[0059] By comparing the defect-free regression curve set with the test fitting curve set, the abnormal points are judged according to the actual qualified threshold, and then the bubble defect position is determined, so as to achieve accurate detection and positioning of the bubble defects in the basin insulator. The defects can be found quickly and accurately, providing an important basis for subsequent maintenance or treatment, and ensuring the quality and safety of basin insulators.

[0060] In some specific embodiments, if the ratio of data at a position in the test fitting curve set to data at a corresponding position in the defect-free regression curve set exceeds an actual qualified threshold, the position is determined to be an abnormal point.

[0061] In some specific embodiments, the steps further include: S7. Take the position of the previous normal point in the curve where the abnormal point is located as the starting point and the position of the next normal point as the end point, set the refined penetration depth difference, take the refined penetration depth difference as the distance between two adjacent penetration depths, perform longitudinal refined stress detection again on the position between the starting point and the end point, fit the measured data as the curve to be compared, compare it with the curve at the corresponding position in the defect-free regression curve set, judge and locate the defect through the actual qualified threshold, judge the abnormal point and determine the two end points where the bubble defect appears, and then determine the longitudinal size of the bubble defect; S8. With the midpoint of the line connecting the two end points of the bubble defect as the center and the radius set manually, a circular refined detection area is drawn, and m refined detection points are reset in the refined detection area. Stress detection is performed on each refined detection point using the same detection method as step S3, and the stress change rate between adjacent penetration depths is calculated. Then, a refined fitting curve of the stress change rate of each refined detection point as a inverse of the penetration depth is fitted. Each refined fitting curve is used as a curve to be compared and compared with the curve closest to the defect-free regression curve set. The bubble defect is judged and located using the actual qualified threshold, and the abnormal point is judged, thereby determining the lateral size of the bubble defect and the shape of the bubble defect.

[0062] The refined fitting curve is a curve showing the stress change rate of each detection point as a function of the penetration depth.

[0063] By setting up longitudinal refined stress detection to determine the longitudinal size of the bubble defect, and re-detecting in the refined detection area to determine the lateral size and shape, a more comprehensive and detailed detection of the bubble defect is achieved. Not only can the defect position be located, but also the specific size and shape information of the defect can be obtained, providing more sufficient data for evaluating the impact of defects on the performance of pot insulators.

[0064] In some specific embodiments, if the ratio of data at a position in the curve to be compared to data at a corresponding position in the defect-free regression curve set exceeds a qualified threshold, the position is determined to be an abnormal point.

[0065] By clarifying the rules for judging anomalies at different detection stages, that is, judging by comparing the data ratio with the qualified threshold, the process of judging anomalies is standardized and normalized, which improves the operability and accuracy of the detection method and ensures the consistency and reliability of the detection results.

[0066] In some specific embodiments, the thinning penetration depth difference is 0.1-0.5 mm.

[0067] In some specific embodiments, the radius of the refined detection area is 3-6 mm, and the distance between two adjacent refined detection points is 0.1-0.5 mm.

[0068] In a specific embodiment, a method for detecting bubble defects of pot-type insulators is used to detect bubble defects of 126 kV three-phase common-phase pot-type insulators before leaving the factory. The method for detecting bubble defects of pot-type insulators includes: Step S1, establishing an ultrasonic stress detection system for a pot-type insulator, the ultrasonic stress detection system for a pot-type insulator comprising an ultrasonic signal generator, the output end of the ultrasonic signal generator being electrically connected to the input end of a high-voltage amplifier, and also comprising an ultrasonic probe, the ultrasonic probe comprising a transmitting probe, a receiving probe and an ultrasonic wedge, the output end of the high-voltage amplifier being electrically connected to the transmitting probe, the receiving probe being electrically connected to the input end of the signal amplifier, and the output end of the signal amplifier being connected to an oscilloscope; Step S2, obtaining 40 non-defective pot-type insulators with the same specifications as the pot-type insulator to be tested, wherein the non-defective pot-type insulators are pot-type insulators that have been confirmed to have no internal defects after X-ray detection, selecting 236 detection points on the non-defective pot-type insulators, and using the ultrasonic stress detection system of the pot-type insulators to perform 10 tests at different penetration depths at each detection point, wherein the penetration depth is Incremental, is the thickness of the defect-free pot insulator, calculates the stress change rate between adjacent penetration depths, and fits it into a defect-free fitting curve. The defect-free fitting curve is a curve of the stress change rate of each detection point changing with the penetration depth. Then, based on the defect-free fitting curve, probability statistics are performed to obtain a regression curve of the stress change rate distribution of each detection point, forming a defect-free regression curve set; The expression of stress change rate is:

[0069] In the formula, The frequency is The penetration depth of ultrasound; The frequency is The penetration depth of ultrasound; The frequency is the penetration depth The average stress at The average stress measured by ultrasonic wave; The frequency is the penetration depth The average stress at The average stress measured by ultrasonic wave; The penetration depth is Change to The stress change rate at time ; No. The expression of stress change rate between adjacent penetration depths at the detection point is:

[0070] In the formula, For pot-type insulators The thickness of each test point; For the The first of the detection points penetration depth; For the Among the detection points, the penetration depth is The average stress measured at For the Among the detection points, the penetration depth is given by Change to The stress change rate at time ; Step S3, obtaining 20 defective pot-type insulators with the same specifications as the pot-type insulator to be tested, wherein the defective pot-type insulators are pot-type insulators confirmed to have bubble defects inside after X-ray detection, and the shape, size and position of the bubble defects inside are determined, and stress detection is performed on the defective pot-type insulators using the same detection points and detection methods as step S2, and the stress change rate between adjacent penetration depths is calculated, and the stress is fitted into a training fitting curve for each detection point, which is summarized into a training fitting curve set, and the training fitting curve is a curve of the stress change rate of each detection point versus the penetration depth; Step S4, comparing the defect-free regression curve set with the curves in the training fitting curve set to obtain the actual qualified threshold value, the specific operation is: Defects are judged and located through the artificially set qualified threshold, suspected abnormal points are judged, and then the suspected abnormal points are checked using the actual position of the bubble defect of the defective basin insulator, and the qualified threshold is adjusted to obtain the actual qualified threshold; If the ratio of the data at a position in the fitting curve set to the data at the corresponding position in the defect-free regression curve set exceeds the qualified threshold, the position is judged as a suspected abnormal point; Step S5, performing stress detection on the pot-type insulator to be tested using the same detection points and detection method as step S2, calculating the stress change rate between adjacent penetration depths, fitting the test fitting curves of each detection point, and summarizing them into a test fitting curve set; Step S6, comparing the defect-free regression curve set with the curves in the test fitting curve set, determining and locating the defects through the actual qualified threshold, determining the abnormal points, and determining the location of the bubble defects according to the locations of the abnormal points; The method for judging the abnormal point is as follows: if the ratio of the data at a position in the test fitting curve set to the data at the corresponding position in the defect-free regression curve set exceeds the actual qualified threshold, then the position is judged as an abnormal point; S7. Take the position of the previous normal point in the curve where the abnormal point is located as the starting point and the position of the next normal point as the end point, set the refined penetration depth difference, the refined penetration depth difference is 0.1mm, take the refined penetration depth difference as the distance between two adjacent penetration depths, perform longitudinal refined stress detection again on the position between the starting point and the end point, fit the measured data as the curve to be compared, and compare it with the curve at the corresponding position in the defect-free regression curve set, judge and locate the defect through the actual qualified threshold, judge the abnormal point and determine the two endpoints where the bubble defect appears, and then determine the longitudinal size of the bubble defect; The method for judging the abnormal point is as follows: if the ratio of the data at a position in the curve to be compared to the data at the corresponding position in the defect-free regression curve exceeds the qualified threshold, the position is judged as an abnormal point; S8. Draw a circular refinement detection area with the midpoint of the line connecting the two end points of the bubble defect as the center and the radius set to 5 mm manually. Reset 314 refinement detection points in the refinement detection area. The distance between two adjacent refinement detection points is 0.5 mm. Perform stress detection on each refinement detection point using the same detection method as step S3. Calculate the stress change rate between adjacent penetration depths. Then fit a refinement fitting curve of the stress change rate of each refinement detection point as a inverse of the penetration depth. Take each refinement fitting curve as a curve to be compared and compare it with the curve closest to the defect-free regression curve set. Use the actual qualified threshold to determine the bubble defect and locate the abnormal point, and then determine the lateral size and shape of the bubble defect. The method for judging an abnormal point is as follows: if the ratio of the data at a position in the curve to be compared to the data at the corresponding position in the defect-free regression curve exceeds a qualified threshold, the position is judged to be an abnormal point.

[0071] The following is an embodiment of a system for detecting bubble defects in pot-type insulators provided in an embodiment of the present disclosure. The active load reduction optimization system and the method for detecting bubble defects in pot-type insulators in the above-mentioned embodiments belong to the same inventive concept. For details not fully described in the embodiment of the system for detecting bubble defects in pot-type insulators, reference can be made to the embodiment of the method for detecting bubble defects in pot-type insulators in the above-mentioned embodiments.

[0072] A mobile terminal implementing various embodiments of the present invention will now be described with reference to the accompanying drawings. In the subsequent description, suffixes such as "module", "component" or "unit" used to represent elements are used only to facilitate the description of the embodiments of the present invention and have no specific meaning in themselves. Therefore, "module" and "component" can be used interchangeably.

[0073] like Figure 2 As shown in the figure, the detection system of bubble defects of basin insulators includes: An ultrasonic stress detection module, used for detecting the stress of a pot-type insulator at different penetration depths using an ultrasonic stress detection system of a pot-type insulator; The defect-free pot insulator analysis module is used to calculate the stress change rate in the defect-free pot insulator, fit the defect-free fitting curve and summarize it into a defect-free fitting curve set, and then perform probability statistics to obtain the stress change rate distribution regression curve of each detection point to form a defect-free regression curve set; Defective pot insulator analysis module, used to calculate the stress change rate in the defective pot insulator, fit the training fitting curve and summarize it into a training fitting curve set; A qualified threshold determination module is used to compare the defect-free regression curve set with the curves in the training fitting curve set to obtain an actual qualified threshold; The analysis module of the pot-type insulator to be tested is used to calculate the stress change rate in the pot-type insulator to be tested, fit the test fitting curve and summarize it into a test fitting curve set, then compare the defect-free regression curve set with the curves in the test fitting curve set, and locate the defects through the actual qualified threshold, judge the abnormal points and determine the location of the bubble defect.

[0074] The present application also provides an electronic device for implementing various embodiments of the present invention. The electronic device includes a memory, a processor, and a computer program stored in the memory and executable on the processor.

[0075] Those skilled in the art will appreciate that the electronic device structure involved in the embodiments of the present invention does not constitute a limitation on the electronic device, and the electronic device may include more or fewer components than shown in the figure, or a combination of certain components, or a different arrangement of components.

[0076] Figure 3 A schematic diagram of the hardware structure of an electronic device for implementing various embodiments of the present invention.

[0077] The electronic device 500 includes, but is not limited to, components such as a processor 501, a network module 502, an audio output unit 503, an input unit 504, a display unit 506, a user input unit 507, an interface unit 508, and a memory 509. Those skilled in the art will appreciate that the electronic device structure involved in the embodiments of the present invention does not constitute a limitation on the electronic device, and the electronic device may include more or fewer components than shown in the figure, or combine certain components, or arrange the components differently.

[0078] In the embodiments of the present invention, electronic devices include but are not limited to laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. Electronic devices can also represent various forms of mobile devices and other similar computing devices. The components shown herein, their connections and relationships, and their functions are only examples and are not intended to limit the implementation of the embodiments of the present application described and / or required herein.

[0079] In the embodiment of the present application, the processor 501 can be implemented by using at least one of an application-specific integrated circuit (ASIC), a digital signal processor (DSP), a digital signal processing device (DSPD), a processor, a controller, a microcontroller, a microprocessor, and an electronic unit designed to perform the functions described herein. In some cases, such an implementation can be implemented in a controller. For software implementation, implementations such as processes or functions can be implemented with separate software modules that allow execution of at least one function or operation. The software code can be implemented by a software application (or program) written in any appropriate programming language, and the software code can be stored in a memory and executed by a controller.

[0080] The display unit 506 is used to display information input by the user or information provided to the user. The display unit 506 may include a display panel, which may be configured in the form of a liquid crystal display (LCD), an organic light-emitting diode (OLED), or the like.

[0081] The user input unit 507 may include, but is not limited to, a physical keyboard, function keys (such as a volume control key, a switch key, etc.), a trackball, a mouse, and a joystick, which will not be described in detail here.

[0082] The interface unit 508 is an interface for connecting external devices to the electronic device 500. For example, the external devices may include a wired or wireless headset port, an external power supply (or battery charger) port, a wired or wireless data port, a memory card port, a port for connecting a device with an identification module, an audio input / output (I / O) port, a video I / O port, an earphone port, and the like.

[0083] In addition, the electronic device 500 includes some functional modules not shown, which will not be described in detail here.

[0084] Those skilled in the art will appreciate that the various aspects of the electronic device provided by the present application may be implemented as a system, method or program product. Therefore, the various aspects of the present disclosure may be specifically implemented in the following forms, namely: a complete hardware implementation, a complete software implementation (including firmware, microcode, etc.), or an implementation combining hardware and software, which may be collectively referred to as a "circuit", "module" or "system" herein.

[0085] The present application also provides a storage medium, in which a program product capable of implementing a method for detecting bubble defects in a basin-type insulator is stored. In some possible implementations, various aspects of the present disclosure may also be implemented in the form of a program product, which includes a program code, and when the program product is run on a terminal device, the program code is used to enable the terminal device to execute the steps according to various exemplary implementations of the present disclosure described in the above “Exemplary Method” section of this specification.

[0086] The storage medium can adopt any combination of one or more readable media. The readable medium can be a readable signal medium or a readable storage medium. The readable storage medium can be, for example, but not limited to, a system, device or device of electricity, magnetism, light, electromagnetic, infrared, or semiconductor, or any combination of the above. More specific examples (non-exhaustive list) of readable storage media include: an electrical connection with one or more wires, a portable disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above.

[0087] The above description of the disclosed embodiments enables one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for detecting bubble defects in a basin insulator, characterized in that the steps include: S1. Establish an ultrasonic stress detection system for pot-type insulators; S2. Obtain M defect-free pot-type insulators with the same specifications as the pot-type insulator to be tested, select N detection points on the defect-free pot-type insulator, and use the ultrasonic stress detection system of the pot-type insulator to perform K different penetration depth tests at each detection point, wherein the penetration depth is Incremental, The thickness of the defect-free pot insulator is calculated, and the stress change rate between adjacent penetration depths is fitted into a defect-free fitting curve. Then, probability statistics are performed based on the defect-free fitting curve to obtain a regression curve of the stress change rate distribution at each detection point, forming a defect-free regression curve set. S3. Obtain J defective pot insulators with the same specifications as the pot insulator to be tested, and perform stress detection on the defective pot insulator using the same detection points and detection methods as in step S2, calculate the stress change rate between adjacent penetration depths, fit the training fitting curves for each detection point, and summarize them into a training fitting curve set; S4. Compare the defect-free regression curve set with the curves in the training fitting curve set to obtain an actual qualified threshold; S5. Stress detection is performed on the tested pot-type insulator using the same detection points and detection methods as in step S2, and the stress change rate between adjacent penetration depths is calculated, and the test fitting curves are fitted to the test points, and the test fitting curves are summarized as a set of test fitting curves; S6. Compare the curves in the defect-free regression curve set with the curves in the test fitting curve set, determine the defect location through the actual qualified threshold, determine the abnormal point, and determine the location of the bubble defect according to the location of the abnormal point.

2. The method for detecting bubble defects in pot-type insulators according to claim 1, characterized in that: In step S1, the ultrasonic stress detection system of the pot-type insulator includes an ultrasonic signal generator, the output end of the ultrasonic signal generator is electrically connected to the input end of the high-voltage amplifier, and also includes an ultrasonic probe, the ultrasonic probe includes a transmitting probe, a receiving probe and an ultrasonic wedge, the output end of the high-voltage amplifier is electrically connected to the transmitting probe, the receiving probe is electrically connected to the input end of the signal amplifier, and the output end of the signal amplifier is connected to the oscilloscope.

3. The method for detecting bubble defects in pot-type insulators according to claim 1, characterized in that: In step S2, the non-defective pot-type insulator is a pot-type insulator that has been confirmed to have no internal defects after X-ray inspection; In step S3, the defective pot-type insulator is a pot-type insulator that is confirmed to have bubble defects inside after X-ray detection, and the shape, size and position of the bubble defects inside are determined.

4. The method for detecting bubble defects in pot-type insulators according to claim 1, characterized in that: The expression of the stress change rate is: In the formula, The frequency is The penetration depth of ultrasound; The frequency is The penetration depth of ultrasound; The frequency is the penetration depth The average stress at The average stress measured by ultrasonic wave; The frequency is the penetration depth The average stress at The average stress measured by ultrasonic wave; The penetration depth is Change to The stress change rate at time ; In step S2, The expression of stress change rate between adjacent penetration depths at the detection point is: In the formula, For pot-type insulators The thickness of each test point; For the The first of the detection points penetration depth; For the Among the detection points, the penetration depth is The average stress measured at For the Among the detection points, the penetration depth is given by Change to The stress change rate.

5. The method for detecting bubble defects in pot-type insulators according to claim 1, characterized in that: The specific operations of step S4 are: Defects are judged and located through the artificially set qualified threshold, suspected abnormal points are judged, and then the suspected abnormal points are checked using the actual position of the bubble defect of the defective basin insulator, and the qualified threshold is adjusted to obtain the actual qualified threshold; Among them, if the ratio of the data at a position in the fitting curve set to the data at the corresponding position in the defect-free regression curve set exceeds the qualified threshold, the position is judged as a suspected abnormal point.

6. The method for detecting bubble defects in pot-type insulators according to claim 1, characterized in that: The steps also include: S7. Take the position of the previous normal point in the curve where the abnormal point is located as the starting point and the position of the next normal point as the end point, set the refined penetration depth difference, take the refined penetration depth difference as the distance between two adjacent penetration depths, perform longitudinal refined stress detection again on the position between the starting point and the end point, fit the measured data as the curve to be compared, compare it with the curve at the corresponding position in the defect-free regression curve set, judge and locate the defect through the actual qualified threshold, judge the abnormal point and determine the two end points where the bubble defect appears, and then determine the longitudinal size of the bubble defect; S8. With the midpoint of the line connecting the two end points of the bubble defect as the center and the radius set manually, a circular refined detection area is drawn, and m refined detection points are reset in the refined detection area. Stress detection is performed on each refined detection point using the same detection method as step S3, and the stress change rate between adjacent penetration depths is calculated. Then, a refined fitting curve of the stress change rate of each refined detection point as a inverse of the penetration depth is fitted. Each refined fitting curve is used as a curve to be compared and compared with the curve closest to the defect-free regression curve set. The bubble defect is judged and located using the actual qualified threshold, and the abnormal point is judged, thereby determining the lateral size of the bubble defect and the shape of the bubble defect.

7. The method for detecting bubble defects in pot-type insulators according to claim 6, characterized in that: In step S6, if the ratio of the data at a position in the test fitting curve set to the data at the corresponding position in the defect-free regression curve set exceeds the actual qualified threshold, the position is judged to be an abnormal point; In steps S7-S8, if the ratio of the data at a position in the curve to be compared to the data at the corresponding position in the defect-free regression curve set exceeds the qualified threshold, the position is determined to be an abnormal point.

8. A system for detecting bubble defects in basin insulators, characterized in that: A method for detecting bubble defects in a basin-type insulator according to any one of claims 1 to 7, comprising: An ultrasonic stress detection module, used for detecting the stress of a pot-type insulator at different penetration depths using an ultrasonic stress detection system of a pot-type insulator; The defect-free pot insulator analysis module is used to calculate the stress change rate in the defect-free pot insulator, fit the defect-free fitting curve and summarize it into a defect-free fitting curve set, and then perform probability statistics to obtain the stress change rate distribution regression curve of each detection point to form a defect-free regression curve set; Defective pot insulator analysis module, used to calculate the stress change rate in the defective pot insulator, fit the training fitting curve and summarize it into a training fitting curve set; A qualified threshold determination module is used to compare the defect-free regression curve set with the curves in the training fitting curve set to obtain an actual qualified threshold; The analysis module of the pot-type insulator to be tested is used to calculate the stress change rate in the pot-type insulator to be tested, fit the test fitting curve and summarize it into a test fitting curve set, then compare the defect-free regression curve set with the curves in the test fitting curve set, and locate the defects through the actual qualified threshold, judge the abnormal points and determine the location of the bubble defect.

9. An electronic device, characterized in that: The invention comprises a memory, a processor and a computer program stored in the memory and executable on the processor, wherein the processor is used to implement the steps of the method for detecting bubble defects of basin-type insulators as claimed in any one of claims 1 to 7 when executing the computer program.

10. A storage medium, characterized in that: A computer program is stored on the storage medium, and when the computer program is executed by the processor, the steps of the method for detecting bubble defects in basin-type insulators as described in any one of claims 1 to 7 are implemented.

Images