Bearing boat and semiconductor process equipment

Abstract

The invention discloses a bearing boat and semiconductor process equipment, and relates to the field of photovoltaics and semiconductors. A bearing boat comprises a supporting assembly and a plurality of heating plates. The multiple heating plates are arranged on the supporting assembly in a stacked mode, and a containing space is formed between every two adjacent heating plates; the plurality of heating plates comprise at least one radio frequency electrode plate and at least one grounding electrode plate, and the radio frequency electrode plates and the grounding electrode plates are alternately arranged. The problems of long preheating time, uneven preheating and the like at least can be solved.

Description

Technical Field

[0001] The present application belongs to the technical field of photovoltaics and semiconductors, and specifically relates to a carrier boat and semiconductor process equipment. Background Art

[0002] Heterojunction with Intrinsic Thin-layer (HJT) solar cells are expected to become the next generation of battery technology due to their advantages such as fewer process steps and high cell quality. The main process steps of HJT solar cells include cleaning and texturing, amorphous silicon thin film deposition, conductive film deposition and screen printing. Among them, amorphous silicon thin film deposition is made by plasma enhanced chemical vapor deposition (PECVD) equipment. Common PECVD equipment layouts include cluster type and chain type. Among them, the chain structure layout is as follows: Figure 1 As shown, the graphite boat 01 loaded with wafers is transferred to the preheating chamber via the loading device, and then enters the process chamber for the corresponding process. After the process is completed, it passes through the buffer chamber and the unloading device in sequence to complete the process flow.

[0003] In the heterojunction (HJT) equipment production line, since the cost of PECVD equipment accounts for the majority of the production line equipment, in order to reduce equipment costs, in recent years, manufacturers have increased the capacity of the substrate to increase equipment production capacity in order to reduce costs. Figure 2 As shown, a multi-layer graphite boat 01 is stacked to increase the carrier area. In this structure, the graphite boat 01 is used as an electrode plate to carry the carrier, and plasma is generated between adjacent electrode plates, thereby greatly expanding the equipment capacity without increasing the floor space. Specifically, the multi-layer graphite boat 01 includes an upper electrode plate 011, a lower electrode plate 012, and an inter-plate connecting rod 013. The upper electrode plate 011 and the lower electrode plate 012 are spaced apart and supported and fixed by the inter-plate connecting rod 013.

[0004] In order to meet the temperature required by the process, the graphite boat 01 is preheated in the metal chamber 02 of the preheating module, such as Figure 3 As shown, the heater 03 of the preheating module is arranged around the graphite boat 01, and there is a certain distance between the heater 03 and the graphite boat 01, and the preheating is achieved by heat radiation, so the preheating time is relatively long. In addition, since the distances between different areas of the graphite boat 01 and the heater are different, the temperature rises faster at the area closer to the heater, and the temperature rises slower at the area farther from the heater, resulting in uneven preheating. Summary of the invention

[0005] The purpose of the embodiments of the present application is to provide a carrier boat and semiconductor process equipment, which can at least solve the problems of long preheating time and uneven preheating.

[0006] In order to solve the above technical problems, this application is implemented as follows:

[0007] The embodiment of the present application provides a carrying boat, comprising: a supporting assembly and a plurality of heating plates;

[0008] The plurality of heating plates are stacked on the support assembly, and there is a receiving space between two adjacent heating plates;

[0009] The plurality of heating plates include at least one radio frequency electrode plate and at least one grounding electrode plate, and the radio frequency electrode plates and the grounding electrode plates are alternately arranged.

[0010] The embodiment of the present application also provides a semiconductor process equipment, including: a process chamber and the above-mentioned carrier boat;

[0011] The carrying boat is arranged in the process chamber;

[0012] The potential of the ground electrode plate in the carrier boat is different from the potential of the process chamber.

[0013] The carrier boat in the embodiment of the present application includes multiple heating plates, some of which can be RF electrode plates, and the other part can be grounded electrode plates. In this way, they can act as both heating components and RF components, so that the wafer can be heated directly through the heating plates without the need to additionally set up heaters around the carrier boat, thereby improving the heating efficiency of the wafer, shortening the heating time, and being beneficial to compressing the beat required by the process, and the heating plate can be used to be arranged opposite to the wafer, increasing the heating area of ​​the wafer, thereby improving the heating uniformity and effectively alleviating the problem of uneven heating in different areas of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic diagram of a chain PECVD device in the related art;

[0015] Figure 2 It is a structural schematic diagram of a multilayer graphite boat in the related art;

[0016] Figure 3 It is a schematic diagram of a multilayer graphite boat and a preheating module in the related art;

[0017] Figure 4 It is a schematic diagram of the structure of the carrying boat disclosed in the embodiment of the present application;

[0018] Figure 5 A schematic diagram of a cross section of a heating plate disclosed in an embodiment of the present application;

[0019] Figure 6 A schematic diagram of a longitudinal section of a heating plate disclosed in an embodiment of the present application;

[0020] Figure 7 A schematic diagram of a longitudinal section of another form of a heating plate disclosed in an embodiment of the present application;

[0021] Figure 8 A schematic diagram of a heating plate disclosed in an embodiment of the present application provided with expansion holes and limiting holes;

[0022] Fig. 9 A schematic diagram of a ground electrode plate disclosed in an embodiment of the present application;

[0023] Fig.10 A schematic diagram of a radio frequency electrode plate disclosed in an embodiment of the present application;

[0024] Fig.11 A schematic diagram of a carrier board, a pick-and-place device, and a positioning assembly disclosed in an embodiment of the present application;

[0025] Fig.12 A schematic diagram of a pick-and-place component, a carrier plate, and a heating plate disclosed in an embodiment of the present application;

[0026] Fig.13 A schematic diagram of a support assembly disclosed in an embodiment of the present application;

[0027] Fig.14 A schematic diagram of a carrying boat provided with an insulating component disclosed in an embodiment of the present application;

[0028] Fig.15 A schematic diagram of the structure of the radio frequency feedthrough and the grounding assembly disclosed in the embodiment of the present application;

[0029] Fig.16 A circuit schematic diagram of a radio frequency feeding device and a carrying boat disclosed in an embodiment of the present application;

[0030] Fig.17 A schematic diagram of the structure of the RF power regulating component, the feed connection component, the RF feed room and the heating plate disclosed in the embodiment of the present application;

[0031] Fig.18 A circuit schematic diagram of a radio frequency feed device disclosed in an embodiment of the present application;

[0032] Fig.19 It is a partial schematic diagram of the feeding connection component disclosed in the embodiment of the present application;

[0033] Fig. 20 It is a schematic diagram of the structure of the carrier boat, process chamber, radio frequency isolation device and sealing device disclosed in the embodiment of the present application;

[0034] Fig.21 A schematic diagram of a radio frequency isolation device, a sealing device and a heating element disclosed in an embodiment of the present application;

[0035] Fig. 22 A cross-sectional view of the heating element, the first pressing block and the first isolation assembly disclosed in the embodiment of the present application;

[0036] Fig.23 It is a partial schematic diagram of the thermal couple, the third isolation component and the process chamber disclosed in the embodiment of the present application;

[0037] Fig.24 It is a partial schematic diagram of the cable, thermocouple, process chamber and sealing device disclosed in the embodiment of the present application;

[0038] Fig.25 A schematic diagram of a lifting assembly, a bearing shaft, and a process chamber disclosed in an embodiment of the present application;

[0039] Fig.26 A first schematic diagram of a semiconductor process equipment disclosed in an embodiment of the present application;

[0040] Fig. 27 This is a second schematic diagram of the semiconductor process equipment disclosed in an embodiment of the present application.

[0041] Description of reference numerals:

[0042] 01-graphite boat; 011-upper electrode plate; 012-lower electrode plate; 013-connecting rod between plates; 02-metal cavity; 03-heater;

[0043] 1-Carrying boat;

[0044] 11-support assembly; 111-support rod; 112-support sleeve; 113-fastener; 114-support foot;

[0045] 12-heating plate; 12a-RF electrode plate; 12b-ground electrode plate; 121-first plate; 122-second plate; 123-heating element; 1231-heating wire core wire; 1232-metal sleeve; 1233-insulating layer; 124-expansion hole; 125-limiting hole; 126-through hole;

[0046] 131-shielding plate; 132-shielding strip;

[0047] 14- positioning component;

[0048] 15-thermocouple;

[0049] 16- transfer wire;

[0050] 17- Cable;

[0051] 18-lifting assembly;

[0052] 2-RF feed device;

[0053] 21-RF feeding piece; 211-RF feeding rod; 212-RF feeding block;

[0054] 22-grounding assembly; 221-grounding feed rod; 222-first grounding feed block; 223-second grounding feed block;

[0055] 23-RF power adjustment component; 231-connecting bar; 2311-main connecting section; 2312-branch connecting section; 2313-connecting column; 232-adjustable capacitor; 233-adjustable inductor;

[0056] 24-feed connection assembly; 241-feed connection component; 242-isolating component; 243-sealing component;

[0057] 3-RF isolation device;

[0058] 31-first isolation component; 311-isolation ring; 3111-metal ring; 31111-connection protrusion; 3112-non-metal ring; 31121-connection groove; 312-first protective sleeve;

[0059] 32-second isolation assembly; 321-second protective sleeve; 322-third protective sleeve; 323-fourth protective sleeve;

[0060] 33-first pressing block;

[0061] 34-third isolation assembly; 341-fifth protective sleeve; 342-sixth protective sleeve; 3421-kit unit; 343-second pressing block; 344-elastic member; 345-limiting member;

[0062] 35- filter;

[0063] 4-sealing device; 41-installation component; 42-third pressing block; 43-top block; 44-isolation sleeve; 45-locking member; 46-first sealing member; 47-second sealing member; 48-third sealing member;

[0064] 5-process chamber;

[0065] 6-Matcher;

[0066] 7-pick-and-place device; 71-pick-and-place member; 711-inclined guide surface. DETAILED DESCRIPTION

[0067] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0068] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0069] The embodiments of the present application are described in detail below through specific embodiments and their application scenarios in conjunction with the accompanying drawings.

[0070] The embodiment of the present application discloses a carrier boat 1, which can not only carry the wafer, but also evenly heat the wafer, and can also meet the requirements for radio frequency during the process. Figures 4 to 27 The disclosed carrying boat 1 comprises a supporting assembly 11 and a plurality of heating plates 12, such as Figure 4 and Fig.13 shown.

[0071] The support assembly 11 is a basic component, which can provide support and installation foundation for the heating plate 12, and can allow two adjacent heating plates 12 to be spaced apart; the heating plate 12 is a core component, which can carry, heat, and provide RF power to a wafer (such as a silicon wafer, etc.). In some embodiments, multiple heating plates 12 are stacked on the support assembly 11, and there is a storage space between two adjacent heating plates 12. In this way, the support assembly 11 can ensure the support and installation stability of the multiple heating plates 12, and the storage space can accommodate the wafer to be processed.

[0072] Optionally, the wafer can be placed on a carrier plate, so that the wafer can be carried by the carrier plate into or out of the carrier boat 1. When the wafer is in the carrier boat 1, the carrier plate carrying the wafer can float on the heating plate 12.

[0073] For example, the spacing between two adjacent heating plates 12 in the plurality of heating plates 12 may be equal; of course, in some other cases, the spacing between two adjacent heating plates 12 may not be completely the same, which may be set according to actual working conditions. In addition, the heating plate 12 may be a rectangular plate, etc.; the number of the heating plates 12 may be at least two, such as two, three, four, etc., which may be selected according to actual working conditions.

[0074] Among them, Fig. 9 and Fig.10 As shown, the multiple heating plates 12 may include at least one RF electrode plate 12a and at least one grounding electrode plate 12b, and the RF electrode plates 12a and the grounding electrode plates 12b are alternately arranged along the stacking direction, so that it is ensured that among any two adjacent heating plates 12, one heating plate 12 is a RF electrode plate 12a and one heating plate 12 is a grounding electrode plate 12b, so that the wafer can be processed in the accommodation space between the RF electrode plate 12a and the grounding electrode plate 12b.

[0075] In the embodiment of the present application, the heating plate 12 can provide a thermal field environment for the chip in the accommodating space, and can provide a radio frequency environment for the process reaction of the chip, that is, the heating plate 12 acts as both a heat source and a radio frequency component, so that the chip can be heated directly through the heating plate 12 without the need to additionally set up a heater around the carrier boat 1, thereby improving the heating efficiency of the chip and shortening the heating time, which is beneficial to compressing the required beat of the process, and the heating plate 12 can be used to be arranged opposite to the chip, increasing the heating area of ​​the chip, thereby improving the heating uniformity and effectively alleviating the problem of uneven heating of different areas of the chip.

[0076] In some embodiments, the heating plate 12 may include a metal plate and a heating element 123, such as Figure 5 As shown. The heating element 123 is embedded in the metal plate, and the heating element 123 is insulated from the metal plate. In this way, the heat generated by the heating element 123 can be transferred through the metal plate, and the electrical connection between the heating element 123 and the metal plate can be effectively avoided. For example, the metal plate can be an aluminum plate, a copper plate, an alloy plate, etc. Of course, it can also be other materials, which are not specifically limited here.

[0077] Continue to refer Figure 5 In some embodiments, the metal plate may include a first plate 121 and a second plate 122 which are stacked. The first plate 121 may have a groove on one side facing the second plate 122, and the heating element 123 is located in the groove. The notch of the groove may be blocked by the second plate 122, so that the heating element 123 is embedded in the metal plate.

[0078] In other embodiments, the second plate 122 may have a groove on one side facing the first plate 121 , and the heating element 123 is located in the groove. The notch of the groove may be sealed by the first plate 121 to enable the heating element 123 to be embedded in the metal plate.

[0079] Optionally, the first plate 121 and the second plate 122 may be fixedly connected, such as by welding, bonding, riveting, etc., or may be detachably connected, such as by screwing, clamping, plugging, etc.

[0080] Continue to refer Figure 5 In some embodiments, the heating element 123 may include a heating wire core 1231, a metal sleeve 1232 and an insulating layer 1233. The insulating layer 1233 is wrapped around the outside of the heating wire core 1231, and the metal sleeve 1232 is sleeved on the outside of the insulating layer 1233. The insulating layer 1233 is used to isolate the heating wire core 1231 from the metal sleeve 1232. Based on this arrangement, an armored heating element 123 can be formed. When the heating wire core 1231 is energized, heat can be generated, and finally dissipated outward through the metal sleeve 1232, so that the metal plate is heated, and the heat is transferred to the accommodation space through the metal plate to achieve heating of the wafer.

[0081] Exemplarily, the material of the insulating layer 1233 may be magnesium oxide. Of course, it may also be other materials, which are not specifically limited here.

[0082] Considering that the edge area of ​​the carrier boat 1 is prone to heat loss, in the embodiment of the present application, the distribution density of the heating element 123 near the edge area of ​​the heating plate 12 can be greater than the distribution density of the heating element 123 in the middle area of ​​the heating plate 12, that is, the heating element 123 is relatively densely distributed in the edge area of ​​the heating plate 12, and is relatively sparsely distributed in the middle area. Figure 6 and Figure 7 Based on this distribution form, more heat can be generated in the edge area of ​​the heating plate 12. Therefore, even if the edge area of ​​the heating plate 12 is easy to lose heat, it can ensure that the temperature of the edge area of ​​the heating plate 12 is basically the same as the temperature of the middle area or within the error range, which can help improve the uniformity of the temperature distribution of the heating plate 12, and further improve the uniformity of heating the wafer.

[0083] refer to Fig.13In some embodiments, the support assembly 11 may include a plurality of support rods 111, a plurality of support sleeves 112, and fasteners 113. Accordingly, the heating plate 12 may be provided with a plurality of guide holes, each support rod 111 is sequentially inserted into the guide holes at corresponding positions of the plurality of heating plates 12, and a plurality of support sleeves 112 are sleeved on the outer side of each support rod 111, each support sleeve 112 is supported between two adjacent heating plates 12, and the fasteners 113 are respectively fastened at both ends of each support rod 111, for limiting the two outermost heating plates 12 of the plurality of heating plates 12. It should be noted that the two outermost heating plates 12 of the plurality of heating plates 12 refer to the heating plate 12 located at the top layer and the heating plate 12 located at the bottom layer among the plurality of heating plates 12 stacked.

[0084] Based on the above configuration, the support sleeve 112 can be used to separate and support two adjacent heating plates 12 to ensure the installation stability of the two adjacent heating plates 12 and to isolate the two adjacent heating plates 12; and the fasteners 113 can be used to limit the positions at both ends of the support rod 111 to ensure that the heating plate 12 will not separate from the support rod 111, and multiple support sleeves 112 can be used to ensure the installation stability of each layer of heating plates 12. In addition, multiple support sleeves 112 are used to implement a multi-point support method for multiple heating plates 12, which can ensure the consistency of the gaps within the plates.

[0085] In addition, a gap may be reserved between the fastener 113 and the top heating plate 12 , and / or between the fastener 113 and the bottom heating plate 12 to form a certain expansion margin, thereby satisfying the expansion requirement of the carrying boat 1 in the extension direction of the support rod 111 .

[0086] It should be noted here that there may be differences in the temperature control of heating plates 12 in different layers. By introducing the support rod 111 and under the action of the support rod 111, it can be satisfied that when the expansion is not synchronized, the two adjacent layers can cooperate with each other to expand, thereby uniformizing the thermal expansion of the heating plate 12 in the direction of the plate surface.

[0087] Exemplarily, the support rod 111 may be a ceramic rod, the support sleeve 112 may be a ceramic sleeve, and the fastener 113 may be a fastening nut.

[0088] Furthermore, the support assembly 11 may also include a support foot 114, which may be installed in the process chamber 5 where the carrier boat 1 is located and connected to one side of the carrier boat 1 to support the carrier boat 1. Optionally, the support foot 114 may be made of insulating material, such as ceramic material, etc., so as to insulate the heat of the heating plate 12 and the radio frequency signal.

[0089] Optionally, the supporting foot 114 may be connected to the supporting rod 111 and may also be connected to the heating plate 12 at the bottom end.

[0090] refer to Figure 8 In some embodiments, the heating plate 12 has a middle area and an edge area surrounding the middle area; in addition, the multiple guide holes may include a plurality of limiting holes 125 and a plurality of expansion holes 124; wherein the plurality of expansion holes 124 are located in the edge area, and the plurality of limiting holes 125 are located in the middle area, and the expansion holes 124 are long holes.

[0091] Exemplarily, when the heating plate 12 is a rectangular plate, expansion holes 124 may be provided at each edge of the heating plate 12, wherein the expansion holes 124 located at the edge of the long side of the rectangle may extend in the direction of the short side of the rectangle, the expansion holes 124 located at the edge of the short side of the rectangle may extend in the direction of the long side of the rectangle, and the expansion holes 124 located at the corners of the rectangle may extend in the direction of the diagonal of the rectangle.

[0092] When the heating plate 12 is a circular plate, an expansion hole 124 may be provided at the edge of the heating plate 12 , and each expansion hole 124 may extend along the radius direction of the circular plate.

[0093] Based on the above-mentioned arrangement, under the joint action of the limiting hole 125, the expansion hole 124 and the support rod 111, when the heating plate 12 expands due to heat, the inner wall of the limiting hole 125 cooperates with the outer wall of the support rod 111 to achieve a limiting effect on the heating plate 12 along the board surface direction, so as to ensure that the central area of ​​the heating plate 12 does not shift when the heating plate 12 expands due to heat. At the same time, the relative movement of the expansion hole 124 and the support rod 111 along the board surface direction can provide a margin for the expansion of the edge area of ​​the heating plate 12, so that the heating plate 12 can expand around the center while being in a free expansion state when expanding.

[0094] In addition, through the overall synergy of the heating plate 12 and the supporting assembly 11, it can be ensured that there is no deviation in the gap between two adjacent heating plates 12 due to abnormal expansion, while also ensuring the consistency of expansion of multiple heating plates 12 along the plate surface direction.

[0095] In order to ensure that the radio frequency signal does not leak abnormally to the inner surface of the process chamber 5, the carrier boat 1 may further include a shielding plate 131, such as Fig.14 As shown, the shielding plate 131 is located on the side of the outermost heating plate 12 away from other heating plates 12, and is used to shield radio frequency signals. Optionally, the shielding plate 131 can be arranged on the outer surface of the heating plate 12 at the top of the carrier boat 1, can also be arranged on the outer surface of the heating plate 12 at the bottom of the carrier boat 1, and can also be arranged on the outer surface of the top heating plate 12 and the outer surface of the bottom heating plate 12 at the same time.

[0096] Based on the above configuration, the heating plate 12 can be separated from the inner surface of the process chamber 5 by the shielding plate 131 , thereby shielding the RF signal to prevent the RF signal from leaking to the inner surface of the process chamber 5 .

[0097] In some more specific embodiments, the layer structure of the carrying boat 1 may be a shielding plate 131 , a plurality of heating plates 12 and a shielding plate 131 which are stacked to form a layer stacking structure, and the layer stacking structure is supported and fixed by a supporting assembly 11 .

[0098] The shielding plate 131 may be mounted to the outer surface of the outermost heating plate 12 by screws.

[0099] Furthermore, the carrier boat 1 may also include a shielding strip 132, which surrounds the side of the heating plate 12 and is used to shield the radio frequency signal. Based on this configuration, the shielding strip 132 can effectively alleviate the problem of the radio frequency signal leaking from the edge of the heating plate 12 to the inner surface of the process chamber 5.

[0100] In some more specific embodiments, the shielding strip 132 can be arranged at the edge area of ​​the shielding plate 131 to form a concave cavity, and the heating plate 12 is embedded in the concave cavity, so that the plate surface and edge of the outermost heating plate 12 of the carrier boat 1 can be isolated to prevent the leakage of radio frequency signals to the inner surface of the process chamber 5. Optionally, the shielding strip 132 surrounding the outermost heating plate 12 can be fixedly connected to the shielding plate 131, and of course, the shielding strip 132 and the shielding plate 131 can also be an integrated structure.

[0101] In some embodiments, the shielding strip 132 may include a plurality of shielding units, which are sequentially connected to form the entire shielding strip 132. Optionally, two adjacent shielding units may be connected in a labyrinth overlap form. It should be noted that the labyrinth overlap form may be a connection form of a protrusion and a groove, or a connection form of a step match, etc.

[0102] In some embodiments, the two outer heating plates 12 among the multiple heating plates 12 can both be grounded electrode plates 12b, that is, the heating plates 12 located on the top and bottom layers of the carrier boat 1 can both be grounded electrode plates 12b. This arrangement can effectively avoid the situation where the top and bottom layers of the carrier boat 1 are RF electrode plates 12a and generate an RF loop with the inner surface of the process chamber 5, thereby alleviating the problem that the RF power cannot be normally released between the plates of the heating plates 12.

[0103] In addition, by distributing in a ground-RF-ground distribution mode, a multi-layer RF circuit can be controlled to separate the ground electrode plate 12b from the process chamber 5, forming a dual-ground RF form, so that the ground electrode plate 12b and the process chamber 5 have different potentials, and the RF circuit can be adjusted so that the RF signal can be transmitted between the plates of the carrier boat 1, thereby satisfying the controllable power distribution under the multi-layer RF circuit.

[0104] In addition, the radio frequency signal can be isolated by the shielding plate 131 so that the radio frequency circuit is independent of the process chamber 5, thereby increasing the controllability of multi-layer power distribution.

[0105] In some more specific embodiments, the carrier boat 1 may include three layers of heating plates 12, with two substrate spacings, which are respectively recorded as the first layer spacing and the second layer spacing. Assuming that the first layer spacing is 15mm and the second layer spacing is 20mm due to processing errors, thermal expansion or other factors, the impedance of the second layer is higher than the impedance of the first layer due to changes in the electrode plate layer spacing. When the RF power supply output (the RF power supply output mode can be a voltage output mode or a current output mode) is 1000W, the voltage output mode is used here for illustration, that is, the voltage between the electrode plates is consistent. At this time, due to the impedance difference between the two layers, the actual power distribution is 800W for the first layer and 200W for the second layer. At this time, the automatic adjustment circuit of the RF power distribution component (such as the matcher) 6 can automatically supplement the impedance to increase the impedance in the RF circuit corresponding to the first layer, so that 500W can be evenly distributed in the two layers to meet the power uniformity requirement. It should be noted here that the specific structure of the matcher 6 and its distribution principle for RF power can refer to the prior art and will not be elaborated here.

[0106] However, in actual situations, due to the change in spacing, the plasma density will be low at the same power. Therefore, in actual situations, it is necessary to further increase the impedance of the first layer to achieve a first-layer power distribution of 400W and a second-layer power distribution of 600W. The implementation method is to increase the adjustment coefficient of the matcher 6 by software or hardware, wherein the adjustment coefficient can be obtained by power conversion, that is, 600 / 400=1.5, thereby achieving the above adjustment. It should be noted here that the adjustment coefficient can also be optimized according to other RF parameters (such as plasma density, etc.) or the process film thickness data can be added to form a complete coefficient calculation method. Exemplarily, the method of increasing the adjustment coefficient of the matcher 6 by hardware is: replacing the connection method of the local capacitor, inductor or circuit, so as to increase the adjustment range of the matcher 6; the method of increasing the adjustment coefficient of the matcher 6 by software is: it can be dynamically adjusted according to a variety of detection data such as real-time network current, voltage and plasma density detection, so as to increase the adjustment range of the matcher 6.

[0107] refer to Fig.11 In some embodiments, the carrier boat 1 may further include a positioning component 14, which is located at the edge area of ​​the heating plate 12 and is used to position the carrier carried by the heating plate 12 to ensure the position accuracy of the wafer on the carrier.

[0108] Optionally, the positioning assembly 14 may include positioning blocks respectively located on both sides of the accommodation space, and the two side edges of the wafer may be positioned by the positioning blocks on both sides.

[0109] The carrier is used to hold the wafer, which floats on the heating plate 12 .

[0110] In the embodiment of the present application, the semiconductor process equipment may include a process chamber 5, the carrier boat 1 and a radio frequency feed-in device 2. The carrier boat 1 is disposed in the process chamber 5, the input end of the radio frequency feed-in device 2 is used to receive a radio frequency signal corresponding to the radio frequency power, and the output end of the radio frequency feed-in device 2 is used to output a radio frequency signal to the carrier boat 1.

[0111] Among them, Fig.15 As shown, the RF feedthrough device 2 includes an RF power distributor (not shown in the figure), multiple RF feedthroughs 21 and a grounding component 22. The RF power distributor is used to distribute RF power to the multiple RF feedthroughs 21. Each RF feedthrough 21 may have an RF input terminal and an RF output terminal. The RF input terminal is used to receive an RF signal, and the RF output terminal is used to connect to at least one RF electrode plate 12a. The grounding component 22 is used to connect to the grounding electrode plate 12b.

[0112] Based on this configuration, RF power can be input to the RF input ends of multiple RF feedthroughs 21 through an RF power distributor, and the RF power distributed by the RF power distributor is fed to the RF electrode plates 12a on different layers of the carrier boat 1, and the grounding electrode plates 12b on different layers of the carrier boat 1 are grounded through the grounding component 22.

[0113] Compared with the method of using the same feeding structure to feed RF power between multiple plates in the related art, the embodiment of the present application uses an RF power distributor to realize the distribution of RF power, and can feed the distributed RF power to the RF electrode plates 12a of different layers through multiple RF feeding components 21, so that the RF power fed to the RF electrode plates 12a of different layers can be regulated by multiple different RF feeding components 21 under the action of the RF power distributor to realize inter-layer RF regulation. Optionally, the RF power distributor can adjust the RF power input to the RF electrode plates 12a of different layers according to different working conditions.

[0114] It should be noted here that the RF output end of each RF feedthrough 21 can be connected to a group of RF electrode plates 12a, wherein one group can include one or more RF electrode plates 12a. Thus, when one group includes one RF electrode plate 12a, RF power can be fed to the RF electrode plate 12a through the RF feedthrough 21; when one group includes multiple RF electrode plates 12a, such as two, and two adjacent RF electrode plates 12a are separated by a grounding electrode plate 12b, in this case, the RF output end of each RF feedthrough 21 can be connected to multiple RF electrode plates 12a respectively to feed RF power to multiple RF electrode plates 12a at the same time.

[0115] In some embodiments, each RF electrode plate 12 a may be connected to at least one RF feedthrough 21 , and RF power may be fed into each RF electrode plate 12 a through the at least one RF feedthrough 21 .

[0116] In some more specific embodiments, each RF electrode plate 12a can be connected to two RF feeds 21, and the two RF feeds 21 are symmetrically arranged in the length direction of the RF electrode plate 12a, that is, the two RF feeds 21 form a double-point symmetrical arrangement on each RF electrode plate 12a, thereby realizing double-point feeding, so as to improve the uniformity of RF power distribution on each RF electrode plate 12a.

[0117] Optionally, a through hole 126 may be provided in the middle region of the RF electrode plate 12a, and the RF feedthrough 21 is connected to the hole wall of the through hole 126. In this way, a first channel may be formed by the through holes 126 of multiple layers of RF electrode plates 12a, and the RF feedthrough 21 is located in the first channel to avoid assembly interference between the RF feedthrough 21 and the RF electrode plate 12a, and RF power may also be fed to each RF electrode plate 12a.

[0118] Similarly, a through hole 126 may be provided in the middle region of the grounding electrode plate 12b, and the grounding component 22 may be connected to the hole wall of the through hole 126. In this way, a second channel may be formed by the through holes 126 of the multiple layers of the grounding electrode plate 12b, and the grounding component 22 may be located in the second channel to avoid assembly interference between the grounding component 22 and the grounding electrode plate 12b, and the grounding setting of each grounding electrode plate 12b may also be realized.

[0119] Optionally, the RF feedthrough 21 can be fastened to the RF electrode plate 12a by screws, so as to introduce RF power to the surface of the RF electrode plate 12a through the RF feedthrough 21, and provide the wafer with the RF power required for the reaction by controlling the potential state of different RF electrode plates 12a. Similarly, the grounding component 22 can also be fastened to the grounding electrode plate 12b by screws to ensure the reliability of grounding.

[0120] In some embodiments, the RF power distribution component may be a matcher 6 with a power distribution function or a circuit with a power distribution function. In addition, it may be any other component with a power distribution function, which is not specifically limited here.

[0121] Continue to refer Fig.15 In some embodiments, each RF feed element 21 may include an RF feed rod 211 and an RF feed block 212. The RF feed rod 211 includes an RF input terminal, and illustratively, one end of the RF feed rod 211 is the RF input terminal. In addition, the RF feed block 212 may include an RF output terminal.

[0122] The RF feeding block 212 is connected to the RF feeding rod 211 , and the RF feeding block 212 is used to be connected to at least one RF electrode plate 12 a .

[0123] Based on the above configuration, the RF signal can be received by the RF feeding rod 211 and transmitted to the RF feeding block 212, and finally transmitted to at least one RF electrode plate 12a through the RF feeding block 212, so as to form a RF environment between the RF electrode plate 12a and the ground electrode plate 12b.

[0124] Optionally, the RF feeding block 212 may include an RF output terminal, which is connected to the RF electrode plate 12a in a one-to-one correspondence, so as to feed RF power to the corresponding RF electrode plate 12a through the RF feeding block 212; of course, the RF feeding block 212 may also include multiple RF output terminals, so as to feed RF power to multiple RF electrode plates 12a respectively through the multiple RF output terminals.

[0125] In some more specific embodiments, the opposite ends of the through hole 126 of the RF electrode plate 12a can be connected to RF feeding components 21 respectively, so as to feed RF power to the RF electrode plate 12a from both sides, which is beneficial to improve the uniformity of RF power feeding in the RF electrode plate 12a.

[0126] Accordingly, opposite ends of the through hole 126 of the grounding electrode plate 12 b may be connected to the grounding assembly 22 , respectively, so as to improve the uniformity of grounding through the grounding assembly 22 .

[0127] In some embodiments, the interlayer spacings of the multiple heating plates 12 in the carrier boat 1 are not completely the same. Specifically, the interlayer spacings between the RF electrode plate 12a and the ground electrode plate 12b are not completely the same. The multiple interlayer spacings may include a first interlayer spacing and a second interlayer spacing, and the first interlayer spacing is greater than the second interlayer spacing.

[0128] It should be noted here that, taking into account the consistency differences in the interlayer spacings of different heating plates 12 due to assembly or process usage, that is, when the interlayer spacings of heating plates 12 in different layers are different, it will lead to differences in RF environments such as plasma density between different layers, that is, when the RF power is the same, the plasma density in different interlayer spacings is different, which will lead to differences in process effects between different layers.

[0129] Based on the above situation, in the embodiment of the present application, the RF power distributor can be used to distribute RF power to the corresponding RF electrode plate 12a at least according to the first interlayer spacing and the second interlayer spacing. That is, under the action of the RF power distributor (such as the matcher 6, etc.), compensation adjustment is performed through the layered adjustment network, that is, according to the difference in interlayer spacing, the RF power distributor adaptively adjusts the feed RF power of the corresponding RF electrode plate 12a, so that the RF power between different layers is basically consistent, so as to achieve consistency in the process effects between different layers. Of course, the RF power distributor can also distribute RF power to the corresponding RF electrode plate 12a according to other RF parameters, such as plasma density, etc.

[0130] Specifically, the RF power passed into the RF feedthrough 21 connected to the RF electrode plate 12a corresponding to the first interlayer spacing is greater than the RF power passed into the RF feedthrough 21 connected to the RF electrode plate 12a corresponding to the second interlayer spacing. Based on this, the plasma density at the first interlayer spacing and the second interlayer spacing can be adjusted accordingly, so that the consistency difference between different layers can be eliminated, so that the process effects between different layers can be consistent.

[0131] For example, when the interlayer spacing is large, the plasma density is small. In this case, the RF power of the RF electrode plate 12a corresponding to the interlayer spacing can be appropriately increased to increase the plasma density. On the contrary, when the interlayer spacing is small, the plasma density is large. In this case, the RF power of the RF electrode plate 12a corresponding to the interlayer spacing can be appropriately reduced to reduce the plasma density.

[0132] In addition, since the top heating plate 12 and the bottom heating plate 12 of the carrier boat 1 are close to the inner wall of the process chamber 5 (i.e., there is a chamber gap capacitance), when the RF power increases, the top heating plate 12 and the bottom heating plate 12 will react with the inner wall of the process chamber 5, so that part of the RF power is consumed in the non-reaction area (e.g., when the interlayer power is set to 5KW, the top and bottom gap powers are 4.5KW). In this way, the RF power fed into the RF electrode plates 12a between different layers can be controlled separately to ensure the consistency of the RF power between different layers. Specifically, the RF power on the RF electrode plates 12a corresponding to the top and bottom layers can be increased separately, that is, the RF power at the two positions is allocated to 5.5KW, and after the loss, it is consistent with the power of other layers.

[0133] refer to Fig.17 , Fig.26 and Fig. 27 In some embodiments, the RF feedthrough device 2 may further include a plurality of RF power regulating components 23, and the plurality of RF power regulating components 23 are respectively arranged between the RF power distribution component and the corresponding RF feedthrough 21. Based on this arrangement, the regulated RF power can be transmitted to the corresponding RF feedthrough 21 through the plurality of RF power regulating components 23.

[0134] It should be noted here that when a group connected to the RF feedthrough 21 includes one RF electrode plate 12a, the RF power in the RF electrode plate 12a can be adjusted through the RF power adjustment component 23; when a group connected to the RF feedthrough 21 includes multiple RF electrode plates 12a, the RF power adjustment component 23 can simultaneously adjust the RF power in multiple RF electrode plates 12a in the group.

[0135] In some more specific embodiments, the input ends of the multiple RF power regulating components 23 are respectively connected to the matcher 6, and the output ends of the multiple RF power regulating components 23 are respectively connected to the corresponding RF feedthroughs 21. Based on this configuration, the RF power distributed by the matcher 6 can be transmitted to the corresponding RF feedthroughs 21 through the multiple RF power regulating components 23, and the distributed RF power can be fed to the corresponding RF electrode plates 12a through the RF feedthroughs 21.

[0136] In the present application embodiment, Fig.17As shown, each RF power regulating component 23 may include a connecting bar 231, an adjustable capacitor 232 and an adjustable inductor 233. Among them, the input end of the connecting bar 231 can be connected to the RF power distributor to receive the RF power distributed by the RF power distributor, the output end of the connecting bar 231 is correspondingly connected to the RF feedthrough 21, and the adjustable capacitor 232 and the adjustable inductor 233 are respectively connected to the connecting bar 231. Based on this, the RF power distributed by the RF power distributor can be transmitted to the corresponding RF feedthrough 21 through the connecting bar 231, and by introducing the adjustable capacitor 232 and the adjustable inductor 233 into the connecting bar 231, the RF field transmitted from the RF feedthrough 21 to the RF electrode plate 12a can be adjusted.

[0137] In some embodiments, the connecting strip 231 may include a main connecting section 2311 and multiple branch connecting sections 2312, wherein the main connecting section 2311 is used to connect to the RF power distribution component through a connecting column 2313, and each branch connecting section 2312 is correspondingly connected to the RF feedthrough 21. In this way, RF power can be fed into the main connecting section 2311 via the connecting column 2313, and distributed to multiple branch connecting sections 2312 by the main connecting section 2311. The RF signal is transmitted to the corresponding RF feedthrough 21 through the multiple branch connecting sections 2312, and finally fed to the corresponding RF electrode plate 12a through the RF feedthrough 21.

[0138] Furthermore, each RF power regulating component 23 may include a plurality of adjustable capacitors 232 and a plurality of adjustable inductors 233. The plurality of adjustable capacitors 232 are respectively connected to a plurality of branch connection sections 2312, and the plurality of adjustable inductors 233 are respectively connected between the plurality of branch connection sections 2312 and the main connection section 2311.

[0139] Based on the above settings, the adjustable capacitor 232 and the adjustable inductor 233 can be introduced into each branch connection section 2312 respectively, and the RF field transmitted from each RF feedthrough 21 to the corresponding RF electrode plate 12a can be adjusted respectively, so that the RF power fed into different areas on at least one RF electrode plate 12a in each group can be adjusted, which is beneficial to improving the consistency of the RF power in the RF electrode plate 12a.

[0140] In some more specific embodiments, each RF electrode plate 12a can be connected to two symmetrically arranged RF feed-ins 21, and the connecting strip 231 can include two branch connection sections 2312, and the two branch connection sections 2312 are respectively connected to the two RF feed-ins 21, and each branch connection section 2312 is provided with an adjustable capacitor 232 and an adjustable inductor 233. Based on this configuration, the size of the RF power transmitted to the two RF feed-ins 21 can be adjusted by adjusting the size of the adjustable capacitor 232 and the adjustable inductor 233 in each branch connection section 2312, so that the size of the RF power at two points on the RF electrode plate 12a can be adjusted, which is beneficial to improving the consistency of the RF power in the RF electrode plate 12a.

[0141] It should be noted here that due to the gas field (that is, the gas field flow rate and pressure are locally uneven, and fast flow rate and low pressure will lead to low local plasma density) or temperature field (that is, there is an open end in the process chamber 5. When the door is opened to take and place the chip, there is a temperature difference, and the reaction speed is slower in the low temperature area), there will be differences in the process effects in the electrode plate. Local low pressure, fast flow rate, low temperature, etc. will all lead to a slower process speed. In this way, RF compensation can be performed by adjusting the double points, that is, increasing the local RF power in the RF electrode plate 12a, so that the density can be adjusted due to the inconsistency of the process environment caused by other abnormal working conditions, so as to adjust the process consistency in the plate.

[0142] refer to Fig.11 The electrode inductive reactance in the RF circuit is the impedance of the RF electrode plate 12a itself; the RF feedthrough 21, the feed connection component 24 described below, and the RF power adjustment component 23 together constitute the inductive reactance of the connection bar 231 in the RF circuit.

[0143] refer to Fig.26 and Fig. 27 In some embodiments, the RF feedthrough device 2 may further include a plurality of feedthrough connection components 24, each feedthrough connection component 24 being connected between the RF power regulating component 23 and the RF feedthrough 21, so that the RF power output by the RF power regulating component 23 may be transmitted to the RF feedthrough 21 through the feedthrough connection component 24, and finally transmitted to the corresponding RF electrode plate 12a through the RF feedthrough 21.

[0144] Optionally, a plug-in connection method can be adopted between the feeding connection component 24 and the RF feeding rod 211 of the RF power adjustment component 23 to facilitate disassembly and assembly.

[0145] refer to Fig.15In some embodiments, the grounding assembly 22 may include a grounding feed rod 221, a first grounding feed block 222, and a plurality of second grounding feed blocks 223. The grounding feed rod 221 is used for grounding, the first grounding feed block 222 may extend along the stacking direction of the carrier boat 1, and the first grounding feed block 222 is connected to the grounding feed rod 221, the plurality of second grounding feed blocks 223 may be arranged at intervals along the stacking direction, and the plurality of second grounding feed blocks 223 are respectively connected to the first grounding feed block 222, and the plurality of second grounding feed blocks 223 are respectively used to be connected to a plurality of grounding electrode plates 12b.

[0146] Based on the above settings, each grounding electrode plate 12b can be connected to the first grounding feed block 222 via the corresponding second grounding feed block 223 and grounded via the grounding feed rod 221, thereby realizing the grounding setting of each grounding electrode plate 12b.

[0147] refer to Figure 8 , the RF feed rod 211 and the RF feed block 212 together constitute the inductive reactance of the connecting strip 231 in the RF circuit; the electrode inductive reactance in the RF circuit is the impedance of the RF electrode plate 12a itself. The first ground feed block 222, the second ground feed block 223 and the ground feed rod 221 together constitute the inductive reactance of the connecting strip 231 in the ground circuit; the electrode inductive reactance in the ground circuit is the impedance of the ground electrode plate 12b itself, and the chamber gap capacitance is the gap capacitance formed by the ground electrode plate 12b and the inner wall of the process chamber 5.

[0148] refer to Fig.19 In some embodiments, the feed connection assembly 24 may include a feed connection component 241, an isolation component 242 and a sealing component 243. The feed connection component 241 is disposed on the cavity wall of the process chamber 5, the input end of the feed connection component 241 is used to connect with the RF power distribution component, and the output end of the feed connection component 241 extends into the process chamber 5 and is connected with the corresponding RF feed component 21; the sealing component 243 is disposed on the outer side of the cavity wall and is sleeved on the outer periphery of the feed connection component 241, and is used to seal the gap between the feed connection component 241 and the cavity wall; the isolation component 242 is disposed outside the process chamber 5 and is sleeved on the outer periphery of the feed connection component 241, and the isolation component 242 is in contact with the sealing component 243.

[0149] Optionally, the feed connection component 241 may include an electrode adapter, which may be fixedly connected to the RF power adjustment component 23 by screws. Specifically, the electrode adapter may be fixedly connected to the connecting strip 231 .

[0150] The feeding connection component 241 may also include a feeding electrode rod, an electrode feeding head and an elastic plug-in ring, wherein one end of the feeding electrode rod is connected to the electrode adapter, the other end of the feeding electrode rod is connected to the electrode feeding head, and the elastic plug-in ring is elastically connected to the electrode feeding head and the RF feedthrough 21. By using the elastic plug-in ring, the pre-tightening force between the electrode feeding head and the RF feedthrough 21 can be increased to increase the tightness of the plug-in, which is beneficial to increase the conductive performance.

[0151] Optionally, the feed electrode rod may be made of a material with low thermal expansion, good structural rigidity, and good electrical conductivity to ensure mechanical and electrical properties of the structure at high temperatures. Exemplarily, the feed electrode rod may be made of 304 stainless steel.

[0152] Considering that the electrode feeding head is located at the edge of the reaction area in the process chamber 5, in order to alleviate the corrosion of the electrode feeding head, the electrode feeding head can be made of corrosion-resistant material. For example, the electrode feeding head can be made of 6061 aluminum alloy.

[0153] Based on the above configuration, external RF power can be introduced into the RF electrode plate 12 a through the RF power regulating component 23 , the electrode adapter, the feeding electrode rod, the electrode feeding head, the elastic plug ring and the RF feeding component 21 in sequence.

[0154] In addition, the isolation and sealing between the above-mentioned feeding parts can be completed by using the isolation component 242 and the sealing component 243 to ensure the signal isolation and sealing effect.

[0155] Considering that during the operation of the semiconductor process equipment, there will be a radio frequency signal on the heating plate 12 (which may be the radio frequency electrode plate 12a or the grounding electrode plate 12b). However, the radio frequency signal will be transmitted along the metal sleeve 1232, and there is a risk of radio frequency power leaking to the process chamber 5. Based on this situation, the semiconductor process equipment in the embodiment of the present application may also include a radio frequency isolation device 3, through which the radio frequency isolation device 3 is used to block the radio frequency signal to prevent the radio frequency power from leaking from the metal sleeve 1232 to the side wall of the process chamber 5.

[0156] Among them, Fig.21 As shown, the RF isolation device 3 may include a first isolation component 31, and the first isolation component 31 is used to block the RF signal from being led out of the metal sleeve 1232 and causing leakage. The first isolation component 31 may include an isolation ring 311, which is adapted to the shape of the metal sleeve 1232, and the isolation ring 311 is connected to the metal sleeve 1232, and is used to block the RF signal in the heating plate 12 from being transmitted through the metal sleeve 1232, thereby effectively playing the role of RF isolation to prevent RF power leakage.

[0157] Exemplarily, the isolation ring 311 can be a ceramic ring, and of course, can also be made of other materials, which are not specifically limited here; in addition, the isolation ring 311 can be fixedly connected to the metal sleeve 1232, such as by welding, bonding, etc., to ensure the sealing of the connection.

[0158] In the embodiment of the present application, after the isolation ring 311 is connected to the metal sleeve 1232, the heating wire core wire 1231 can be led to the isolation ring 311, and the insulating layer 1233 is filled inside, that is, the transmission path of the metal sleeve 1232 for the radio frequency signal is disconnected by the isolation ring 311, so that the leakage of radio frequency power can be avoided. It should be noted here that since the processing technology of the heating element 123 is an integrated drawing and forming, the isolation ring 311 can be prepared separately from the heating element 123, and the isolation ring 311 can be connected to the metal sleeve 1232 through subsequent connection (such as welding, etc.).

[0159] In the embodiment of the present application, the isolation ring 311 is connected to the metal sleeve 1232 of the heating element 123, so that the isolation ring 311 can block the radio frequency signal transmitted from the heating plate 12 to the metal sleeve 1232, thereby effectively reducing the risk of the radio frequency power on the heating plate 12 leaking from the metal sleeve 1232 and ensuring the normal release of the radio frequency power.

[0160] In some embodiments, the isolation ring 311 can be disposed at one end of the heating element 123 and connected to the end surface of the metal sleeve 1232 , so that the RF signal can be effectively blocked from being transmitted from the end surface of the metal sleeve 1232 to prevent RF power leakage.

[0161] In other embodiments, the isolation ring 311 can be disposed between one end of the heating element 123 and the edge of the heating plate 12, and axially separates the metal sleeve 1232 into two parts. In this way, the RF power can be effectively blocked from being transmitted from one part of the metal sleeve 1232 to another part, thereby effectively preventing the RF signal from being transmitted and further preventing the RF signal from leaking.

[0162] In the embodiment of the present application, through the connection between the isolation ring 311 and the metal sleeve 1232, it can have both metal flexibility (flexibility can resist cable bending caused by thermal expansion) and the effect of non-metallic blocking of radio frequency signals.

[0163] Continue to refer Fig.21In some embodiments, the isolation ring 311 may include a metal ring 3111 and a non-metal ring 3112. The metal ring 3111 is connected to the metal sleeve 1232, and the metal ring 3111 is connected to at least one axial end of the non-metal ring 3112. Alternatively, the metal ring 3111 may be connected to one end of the non-metal ring 3112, and the metal ring 3111 is connected to the metal sleeve 1232; or the metal ring 3111 may be connected to both axial ends of the non-metal ring 3112, and the metal ring 3111 at one axial end is connected to the metal sleeve 1232.

[0164] Based on the above configuration, the non-metallic ring 3112 can be used to block the radio frequency signal to prevent radio frequency power leakage.

[0165] Furthermore, the shaft end of one of the non-metallic ring 3112 and the metal ring 3111 may be provided with a connecting groove 31121, and the shaft end of the other may be provided with a connecting protrusion 31111, and the connecting protrusion 31111 is matched and connected with the connecting groove 31121. Based on this arrangement, the reliability of the connection between the metal ring 3111 and the non-metallic ring 3112 can be ensured.

[0166] In addition, welding may be performed at the connection between the connection protrusion 31111 and the connection groove 31121 to further improve the connection reliability.

[0167] In some more specific embodiments, the two axial ends of the non-metallic ring 3112 are respectively provided with connecting protrusions 31111, and the two metal rings 3111 are respectively provided with connecting grooves 31121, so that the two metal rings 3111 can be respectively assembled to the two axial ends of the non-metallic ring 3112.

[0168] Considering that the carrier boat 1 is arranged in the process chamber 5, and the heating element 123 is led out from the heating plate 12 and extends in the process chamber 5, in this way, during the process, the plasma in the process chamber 5 may invade the heating element 123. Based on this situation, the first isolation assembly 31 may also include a first protective sleeve 312, which connects the isolation ring 311 and the carrier boat 1 and is sleeved on the outside of the metal sleeve 1232 to block the plasma. Optionally, when the isolation ring 311 is located at the end of the metal sleeve 1232, the first protective sleeve 312 can be sleeved on the outside of the metal sleeve 1232, and one end of the first protective sleeve 312 is connected to the isolation ring 311; when the isolation ring 311 is located in the middle of the metal sleeve 1232, the first protective sleeve 312 can be sleeved on the outside of the metal sleeve 1232, and at the same time, the first protective sleeve 312 is also sleeved on the outside of the isolation ring 311.

[0169] Based on the above configuration, by configuring the first protective sleeve 312 , it is possible to effectively prevent plasma from intruding into the heating element 123 and reduce the safety risk of low-vacuum ignition at the positive and negative charged ends.

[0170] Optionally, the first protective cover 312 may be made of ceramic material. Of course, other materials with plasma isolation properties may also be used, which is not specifically limited here.

[0171] Considering that the transfer wire 16 connected to the heating wire core wire 1231 of the heating element 123 is located in the process chamber 5, the plasma in the process chamber 5 may also invade the transfer wire 16. Based on this situation, the isolation device may further include a second isolation component 32, and the second isolation component 32 may protect the transfer wire 16.

[0172] Specifically, the second isolation component 32 is used to be arranged outside the switching wire 16 to prevent plasma from invading the switching wire 16. In addition, one end of the second isolation component 32 is connected to the first isolation component 31 to protect the connection between the switching wire 16 and the heating wire core wire 1231.

[0173] Continue to refer Fig.21 The second isolation component 32 may further include a first pressing block 33, which is docked with the other end of the second isolation component 32 and connected to the heating plate 12 through a locking member 45. In this way, under the locking action of the locking member 45, the second isolation component 32 can be pressed by the first pressing block 33, and the first isolation component 31 can be pressed by the second isolation component 32, thereby ensuring that the first isolation component 31 and the second isolation component 32 are reliably installed on the heating plate 12.

[0174] The second isolation assembly 32 includes a second protective sleeve 321, a fourth protective sleeve 323 and a third protective sleeve 322 which are sequentially arranged. The second protective sleeve 321 is sleeved on the outer side of the connection between the transfer wire 16 and the heating wire core wire 1231 to protect the connection between the transfer wire 16 and the heating wire core wire 1231 from plasma invasion; the third protective sleeve 322 is sleeved on the outer side of the connection between the transfer wire 16 and the cable 17 to protect the connection between the transfer wire 16 and the cable 17 from plasma invasion; the fourth protective sleeve 323 is sleeved on the outer side of the area between the two ends of the transfer wire 16 to protect the area between the two ends of the transfer wire 16 from plasma invasion.

[0175] Optionally, the second protective cover 321, the fourth protective cover 323 and the third protective cover 322 can be fixedly connected in sequence, such as by welding, bonding, etc., or detachably connected; of course, the second protective cover 321, the fourth protective cover 323 and the third protective cover 322 can also be an integral structure.

[0176] In some embodiments, the lead-out end of the heating wire core wire 1231 of each heating plate 12 is led out along the plate surface direction of the heating plate 12, so that the total lengths of the heating wire core wires 1231, the transfer wires 16, and the cables 17 corresponding to the multiple heating plates 12 are equal. Based on this arrangement, the extension direction of the heating wire core wire 1231, the transfer wire 16, and the cable 17 corresponding to each heating plate 12 can be made parallel to the heating plate 12, so that there will be no situation that affects the flow resistance of the gas field between the heating plates 12, and because the total length is equal, the radio frequency mutual winding sparking phenomenon caused by abnormal bending due to the unequal total lengths of the heating wire core wires 1231, the transfer wire 16, and the cable 17 corresponding to different layers of heating plates 12 can be effectively avoided.

[0177] In some more specific embodiments, the heating wire core wire 1231 can be led out from the tail end of the heating plate 12, and this position will not affect the gas field flow resistance between the heating plates 12, and this position is also placed in coordination with the vacuum extraction port of the process chamber 5, so that during the vacuum extraction process, the heating wire core wire 1231, the transfer wire 16 and the cable 17 will not block the airflow. Optionally, the heating wire core wire 1231 can be led out toward a side wall of the process chamber 5, and accordingly, the vacuum extraction port can be set on the side wall to achieve the coordinated placement of the position.

[0178] In order to adapt to the arrangement of the heating wire core wire 1231, the switching wire 16 and the cable 17, in the embodiment of the present application, the first isolation component 31 and the second isolation component 32 can both extend along the plate surface direction of the corresponding heating plate 12, and be sleeved on the outer side of the corresponding metal sleeve 1232 and the switching wire 16, thereby effectively alleviating the problem of gas field flow resistance caused by the first isolation component 31 and the second isolation component 32 to the gas in the process chamber 5.

[0179] refer to Fig.23 In some embodiments, the carrier boat 1 may further include a thermocouple 15, the detection end of which is disposed on the heating plate 12, for detecting the temperature of the heating plate 12. In addition, the thermocouple 15 is led out relative to the heating plate 12, and the end of the thermocouple 15 away from the heating plate 12 extends outside the process chamber 5, so as to facilitate signal connection with the signal receiving device, thereby realizing the reading of the temperature of the heating plate 12. Optionally, the thermocouple 15 may also be led out of the process chamber 5 through a cable 17, so as to facilitate connection with the signal receiving device.

[0180] Optionally, the thermocouple 15 may include a thermocouple core wire, an outer sleeve, and a thermocouple insulating material located between the thermocouple core wire and the outer sleeve, wherein the outer sleeve may be an armored metal tube or the like.

[0181] Considering that the temperature inside the process chamber 5 is relatively high and the thermocouple 15 is placed at the edge of the plasma reaction area, in order to prevent the thermocouple 15 signal from being interfered by the plasma and even causing damage to the thermocouple 15, the isolation device in the embodiment of the present application may further include a third isolation component 34, such as Fig.23 As shown, the third isolation component 34 is arranged on the outside of the thermocouple 15 to isolate the plasma outside the thermocouple 15, thereby effectively preventing the plasma from invading the thermocouple 15 and affecting the signal of the thermocouple 15 or causing damage to the thermocouple 15; at the same time, the third isolation component 34 can also isolate the thermocouple 15 from the heating plate 12, effectively preventing the radio frequency signal on the heating plate 12 from being transmitted to the thermocouple 15 and leaking to the process chamber 5 through the thermocouple 15.

[0182] In some embodiments, the third isolation assembly 34 includes a fifth protective sleeve 341, a sixth protective sleeve 342, and a second pressing block 343. The fifth protective sleeve 341 is sleeved on the periphery and end of one end of the thermocouple 15 disposed on the heating plate 12, and is used to isolate the end of the thermocouple 15 disposed on the heating plate 12 from the heating plate 12 at the periphery and end, respectively, so as to block the radio frequency signal. Optionally, the fifth protective sleeve 341 can be made of ceramic material, such as aluminum nitride material, which has good thermal conductivity.

[0183] The second pressing block 343 is connected to the heating plate 12 through the locking piece 45, and the fifth protective piece is arranged between the second pressing block 343 and the heating plate 12. In this way, under the locking action of the locking piece 45, the fifth protective cover 341 can be installed to the heating plate 12 through the second pressing block 343, and the reliability of the installation is guaranteed.

[0184] The sixth protective sleeve 342 is sleeved on the outside of the thermocouple 15 and docked with the second pressing block 343. In this way, the sixth protective sleeve 342 can protect the outside of the thermocouple 15 to prevent the plasma in the process chamber 5 from invading the thermocouple 15; and the installation of the sixth protective sleeve 342 can be achieved through the second pressing block 343.

[0185] In some embodiments, the fifth protective sleeve 341 and the second pressing block 343 can be slidably connected in the extension direction of the thermocouple 15, so that the fifth protective sleeve 341 can move relative to the second pressing block 343. Further, the third isolation assembly 34 can also include an elastic member 344 and a stopper 345, wherein the stopper 345 is connected to the thermocouple 15 or the fifth protective sleeve 341, and the elastic member 344 elastically connects the stopper 345 and the second pressing block 343, so that under the elastic force of the elastic member 344, a pre-tightening force can be generated, and the pre-tightening force is transmitted to the thermocouple 15 or the fifth protective sleeve 341 through the stopper 345, thereby ensuring the connection stability between the thermocouple 15 and the heating plate 12.

[0186] Optionally, the stopper 345 can be fixedly connected to the thermocouple 15 so that the thermocouple 15 and the fifth protective sleeve 341 can be in close contact with the heating plate 12 under the elastic force of the elastic member 344 to ensure the reliability and stability of the connection.

[0187] Considering that the carrying boat 1 may produce a thermal expansion effect, the thermal expansion will drag the thermocouple 15. Based on this, the sixth protective cover 342 may include a plurality of kit units 3421 arranged in sequence, and two adjacent kit units 3421 can be slidably connected along the extension direction of the thermocouple 15, so that a multi-stage series structure can be formed. Based on this arrangement, it can be ensured that when the carrying boat 1 undergoes thermal expansion, two adjacent kit units 3421 can slide relative to each other so that the sixth isolation has a certain flexibility effect, and can also maintain the effect of isolating plasma to prevent plasma from invading the thermocouple 15 and affecting the temperature detection accuracy. Exemplarily, the connection between two adjacent kit units 3421 can adopt a maze structure design to ensure that the flexibility can be ensured while sliding against each other to ensure the isolation effect.

[0188] In other embodiments, one end of the sixth protective sleeve 342 can be slidably connected to the second pressing block 343 along the extension direction of the thermocouple 15. Based on this, when the carrying boat 1 undergoes thermal expansion, the sixth protective sleeve 342 and the second pressing block 343 can also slide relative to each other to form a flexible effect to adapt to the thermal expansion effect.

[0189] refer to Fig.26 In some embodiments, the semiconductor process equipment may further include a filter 35 , which is connected to the heater 123 and the thermocouple 15 via cables 17 , respectively. The filter 35 is used to process the radio frequency signal leaked through the cable 17 to isolate the high-frequency signal in the cable 17 .

[0190] Optionally, the filter 35 can be fixed to the filter cover by screws. The filter cover is used for radio frequency isolation protection of the filter 35 and plays a role of transfer fixing. It can be fixed to the side wall of the process chamber 5 by screws and is used to support the filter 35.

[0191] Based on the above configuration, when the RF signal on the heating plate 12 leaks to the heating element 123 and the thermocouple 15, it can be transmitted to the filter 35 through their respective cables 17, and the high-frequency signal in the RF signal is filtered by the filter 35 to deal with the safety risk of complex high-frequency signals leaking from the cable 17 to outside the process chamber 5, and can also alleviate the impact of high-frequency signals on power supply performance.

[0192] In some embodiments, the semiconductor process equipment may further include a process chamber 5 and a sealing device 4 . The carrier boat 1 and the RF isolation device 3 are both disposed in the process chamber 5 , and the heating element 123 and the thermocouple 15 are respectively extended to the outside of the process chamber 5 through cables 17 .

[0193] In order to prevent the radio frequency signal on the heating plate 12 from being transmitted from the cables 17 connected to the heating element 123 and the thermocouple 15 to the outside of the process chamber 5 and causing radio frequency power leakage, in the embodiment of the present application, the sealing device 4 is sealed and connected between the cable 17 and the side wall of the process chamber 5. Based on this configuration, the radio frequency signal can be blocked by the sealing device 4 to prevent the radio frequency signal from leaking to the outside of the process chamber 5 through the cable 17 and causing safety risks.

[0194] refer to Fig.24 In some embodiments, the sealing device 4 may include a mounting component 41, a third pressing block 42, a top block 43, an isolation sleeve 44 and a locking member 45. The mounting component 41 is connected to the side wall of the process chamber 5, and the side wall of the process chamber 5 is provided with a mounting hole. The isolation sleeve 44 is movably provided on the mounting component 41, and at least part of the isolation sleeve 44 is provided in the mounting hole. The third pressing block 42 is movably provided on the mounting component 41 and abuts against the isolation sleeve 44. The top block 43 is connected to the mounting component 41 through the locking member 45 and abuts against the third pressing block 42. The cable 17 passes through the process chamber 5 via the mounting component 41 and the third pressing block 42.

[0195] Optionally, the mounting component 41 can be fixed to the side wall of the process chamber 5 by screws; the isolation sleeve 44 can be located between the mounting component 41 and the side wall of the process chamber 5, and can be moved relative to the mounting component 41. At the same time, the mounting component 41 can also limit the isolation sleeve 44 to prevent the isolation sleeve 44 from detaching from the process mounting hole.

[0196] The top block 43 can be locked to the mounting component 41 by the locking member 45 , and the third pressing block 42 can be pressed by the top block 43 , thereby pressing the isolation sleeve 44 by the third pressing block 42 , thereby ensuring that the isolation sleeve 44 can be reliably connected to the side wall of the process chamber 5 .

[0197] Optionally, the isolation sleeve 44 may be made of ceramic material, and the top block 43 may be made of resin, ceramic or other material capable of isolating radio frequency signals.

[0198] In some embodiments, the sealing device 4 may further include a first seal 46, a second seal 47 and a third seal 48. The first seal 46 is sealed between the isolation sleeve 44 and the side wall of the process chamber 5, so that the first seal 46 can be used to seal the isolation sleeve 44 and the side wall of the process chamber 5 to prevent the high-frequency signal from leaking outward from the side wall of the process chamber 5 via the cable 17; the second seal 47 is sealed between the mounting component 41 and the isolation sleeve 44, and the second seal 47 can ensure that the isolation sleeve 44 and the mounting component 41 do not contact each other, thereby effectively avoiding the occurrence of crushing the isolation sleeve 44; the third seal 48 is sealed between the third pressing block 42 and the isolation sleeve 44, and the third seal 48 can not only seal and block the signal, but also play a buffering role.

[0199] It should be noted here that the first sealing member 46 , the second sealing member 47 and the third sealing member 48 may all be in a certain compression state to form a certain pre-tightening sealing effect.

[0200] Based on the above-mentioned carrier boat 1, the embodiment of the present application also discloses a semiconductor process equipment, and the disclosed semiconductor process equipment includes a process chamber 5, a carrier boat 1, a matcher 6, an RF feed-in device 2, an RF isolation device 3, etc. Among them, the carrier boat 1 is arranged in the process chamber 5, and is used to carry a carrier plate with a wafer placed thereon, and is used to provide the wafer with a thermal environment and an RF environment required for the process; the matcher 6 is arranged outside the process chamber 5, and is connected to an RF power supply, and is used to realize the distribution of RF power; the RF power regulating component 23 of the RF feed-in device 2 is arranged outside the process chamber 5, and is connected to the matcher 6; one end of the feed connection component 24 is located outside the process chamber 5 and is connected to the RF power regulating component 23, and the other end of the feed connection component 24 is located inside the process chamber 5, and is connected to the RF feed-in device 2; the RF feed-in device 2 is arranged inside the process chamber 5, and is connected to the heating plate 12. Based on this setting, the RF signal output by the RF power supply is first power-adjusted by the matcher 6 as needed, and the RF signal corresponding to the adjusted RF power is transmitted to the RF power adjustment component 23 to distribute the RF signal on a single RF electrode plate 12a, so as to achieve consistency of RF power within the layer; the distributed RF power is transmitted to the RF feedthrough 21 via the feeding connection component 24, and the RF signal corresponding to the RF power adjusted by the matcher 6 is fed into different RF electrode plates 12a by multiple RF feedthroughs 21, so that an RF signal can be generated between the RF electrode plate 12a and the adjacent ground electrode plate 12b, thereby providing an RF environment for the chip process.

[0201] It should be noted here that the RF power regulation component 23 can be used to distribute RF power on a single RF electrode plate 12a, that is, intra-layer RF power distribution; the matcher 6 can be used to distribute RF power on multiple different RF electrode plates 12a, that is, inter-layer RF power distribution.

[0202] In addition, the RF isolation device 3 can isolate the RF signal to prevent the RF power on the carrier boat 1 from leaking into the process chamber 5 and causing RF power abnormality, and can also block the plasma in the process chamber 5 to prevent the plasma from damaging components such as the cable 17, the transfer wire 16, and the thermocouple 15, or affecting the detection accuracy of the thermocouple 15.

[0203] The process chamber 5 and the carrier boat 1. The carrier boat 1 is disposed in the process chamber 5, and the potential of the ground electrode plate 12b in the carrier boat 1 is different from the potential of the process chamber 5. Based on this, the RF circuit can be adjusted so that the RF signal can be transmitted between the plates of the carrier boat 1, and the distribution of the RF signal can be controlled under the multi-layer RF circuit.

[0204] In order to transfer the carrier board carrying the wafer to the carrier boat 1, and to remove the carrier board from the carrier boat 1, the semiconductor process equipment in the embodiment of the present application may further include a pick-and-place device 7, such as Fig.11 As shown, the pick-and-place device 7 may include an actuator, a power assembly and a sealing assembly. The actuator may be fixed to the power assembly and the sealing assembly by screw connection; the power assembly may include a driving mechanism such as a cylinder and a motor to achieve the up and down movement of the actuator; the sealing assembly may use a sliding sealing method such as a bellows seal.

[0205] like Fig.12 As shown, in some embodiments, the actuator may include a pick-and-place member 71, which may be provided with double-sided inclined guide surfaces to position the carrier in the left and right directions during the pick-and-place action through the double-sided inclined guide surfaces to ensure that the position of the carrier in the left and right directions is basically free of deviation.

[0206] In addition, the execution component can also be connected to a robot, so that the robot can drive the execution component to move horizontally and lift up and down to achieve the picking and placing of the carrier.

[0207] Optionally, the pick-and-place member 71 may be provided with a fixed slope, and the carrier supported by the fixed slope may be limited to ensure that the carrier does not move randomly relative to the pick-and-place member 71 during movement.

[0208] In addition, the carrier plate can also be positioned in the front-to-back direction by means of the front and rear slopes of the positioning block of the positioning assembly 14 to ensure that the position of the carrier plate in the front-to-back direction is substantially free of deviation.

[0209] like Fig.25 As shown, in some embodiments, the carrier boat 1 may further include a lifting assembly 18, which is used to lift the carrier. The lifting assembly 18 may include a lifting member and a lifting bracket, wherein the lifting member may be electrically driven, pneumatically driven, hydraulically driven, etc. The lifting member is connected to the lifting bracket to drive the lifting bracket to lift, and the lifting bracket drives the carrier to lift between the heating plates 12.

[0210] In order to facilitate the placement and removal of the carrier board, a notch may be provided on the side of the carrier boat 1 so that the actuator can smoothly enter and exit the carrier boat 1 .

[0211] In the embodiment of the present application, the carrier can be placed on the lifting assembly 18 by the pick-and-place device 7, and the carrier can be lowered by the lifting assembly 18 to approach the heating plate 12. At this time, the heating can be started, and the discharge can be initiated between the adjacent heating plates 12 to form a plasma, thereby meeting the temperature environment and radio frequency environment required by the process; when the reaction is completed, the lifting assembly 18 lifts the carrier, and the pick-and-place device 7 removes the carrier from the lifting assembly and moves it out of the carrier boat 1.

[0212] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A carrying boat, characterized in that: include: A support assembly (11) and a plurality of heating plates (12); The plurality of heating plates (12) are stacked on the support assembly (11), and a receiving space is provided between two adjacent heating plates (12); The plurality of heating plates (12) include at least one radio frequency electrode plate (12a) and at least one grounding electrode plate (12b), and the radio frequency electrode plates (12a) and the grounding electrode plates (12b) are arranged alternately.

2. The carrying boat according to claim 1, characterized in that: The heating plate (12) comprises a metal plate and a heating element (123) embedded in the metal plate and insulated from the metal plate.

3. The carrying boat according to claim 2, characterized in that: The metal plate comprises a first plate (121) and a second plate (122) which are stacked; the first plate (121) has a groove on one side facing the second plate (122), and / or the second plate (122) has a groove on one side facing the first plate (121); The heating element (123) is located in the groove.

4. The carrying boat according to claim 2 or 3, characterized in that: The distribution density of the heating elements (123) in the area close to the edge of the heating plate (12) is greater than the distribution density in the area close to the middle of the heating plate (12).

5. The carrying boat according to claim 2 or 3, characterized in that: The heating element (123) comprises a heating wire core (1231), a metal sleeve (1232) and an insulating layer (1233); The insulating layer (1233) is wrapped around the outside of the heating wire core wire (1231), and the metal sleeve (1232) is sleeved on the outside of the insulating layer (1233).

6. The carrying boat according to claim 1, characterized in that: The support assembly (11) comprises a plurality of support rods (111), a plurality of support sleeves (112) and a fastener (113); The heating plate (12) is provided with a plurality of guide holes; The support rod (111) is sequentially inserted into the guide holes at corresponding positions of the plurality of heating plates (12); The outer side of the support rod (111) is provided with a plurality of support sleeves (112), and the support sleeves (112) are supported between two adjacent heating plates (12); The fasteners (113) are respectively fastened to both ends of the support rod (111) and are used to limit the positions of the two outermost heating plates (12) among the plurality of heating plates (12).

7. The carrying boat according to claim 6, characterized in that: The heating plate (12) has a middle region and an edge region surrounding the middle region, the plurality of guide holes include a plurality of limiting holes (125) and a plurality of expansion holes (124), the plurality of expansion holes (124) are located in the edge region, and the plurality of limiting holes (125) are located in the middle region; The expansion hole (124) is a long hole.

8. The carrying boat according to claim 1, characterized in that: The carrying boat (1) further comprises a shielding plate (131) located on a side of the two outermost heating plates (12) among the plurality of heating plates (12) away from the other heating plates (12), wherein the shielding plate (131) is used for shielding radio frequency signals.

9. The carrying boat according to claim 8, characterized in that: The carrying boat (1) further comprises a shielding strip (132) arranged around the side of the heating plate (12), and the shielding strip (132) is used for shielding radio frequency signals.

10. The carrying boat according to claim 1, characterized in that: The two outermost heating plates (12) among the plurality of heating plates (12) are both grounding electrode plates (12b).

11. The carrying boat according to claim 1, characterized in that: The carrying boat (1) further comprises a positioning assembly (14) located at an edge region of the heating plate (12), wherein the positioning assembly (14) is used to position a carrying plate carried by the heating plate (12).

12. A semiconductor process equipment, characterized in that: include: A process chamber (5) and a carrier boat (1) as claimed in any one of claims 1 to 11; The carrying boat (1) is arranged in the process chamber (5); The potential of the grounding electrode plate (12b) in the carrier boat (1) is different from the potential of the process chamber (5).

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