A pulse width internal impedance matching method for a pulse high frequency ionization device

Abstract

The application discloses a pulse width internal impedance matching method of a pulse high-frequency ionization device, and comprises the following steps: step one, adding a superposition area between a high-frequency low-power pulse and a low-frequency high-power pulse of the pulse high-frequency ionization device, so as to generate a low-density plasma background with a certain high-frequency power receiving effect; and step two, adopting a dual-frequency driving device to finely adjust the rising edge and the falling edge of the high-power low-frequency pulse, and to improve the instantaneous impedance matching effect of the rising edge and the falling edge of the low-frequency high-power pulse. According to the application, the superposition area is adopted to improve the great reflection intensity of the power when the low-frequency high-power pulse arrives, and the dual-frequency driving device is further adopted to finely adjust the rising edge and the falling edge of the low-frequency high-power pulse, so that the risk caused by the great or even higher reverse high-frequency power generated instantaneously is further reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of particle sources and high frequency technology, and particularly to a pulse width impedance matching method for a pulsed high frequency ionization device. BACKGROUND

[0002] High frequency ionization devices are widely used in charged particle accelerators, semiconductor industry, plasma and material science research, and controllable nuclear fusion neutral beam heating, etc. Among them, pulsed high frequency ionization devices are particularly suitable for scenarios that require the generation of high-current pulse beams, and can provide instantaneous extraction current far exceeding that of high frequency continuous wave ionization devices, and have a service life far exceeding that of arc discharge devices driven by filaments, greatly reducing the maintenance frequency of the equipment.

[0003] The key to generating plasma by a high frequency ionization device is to feed high frequency power into the load in the system (such as a high frequency antenna and the plasma material generated by its driving); and the sufficient and necessary condition for the high frequency power to be fed into the load is to achieve impedance matching between the load and the high frequency power transmission system, i.e. the impedance of the high frequency power transmission system at the output port connected to the load is exactly close to or equal to the impedance of the load. If the impedance matching fails or is not good, the proportion of high frequency power transmitted to the load is very low, and the standing wave of high frequency power is very high, so that not only can plasma not be generated, or the plasma density cannot meet the standard, but also the high frequency power source may be damaged due to power reflection protection (stop output).

[0004] A high frequency ionization device can achieve impedance matching through a vector impedance matching network, i.e. matching the output impedance of the high frequency power source at the port of the device connected to the high frequency power source, and matching the load at the port of the device connected to the load. The device usually contains adjustable capacitors, and when the load is within a certain range, the impedance matching condition described above can be achieved by adjusting one or more groups of adjustable capacitors in the device.

[0005] However, for a pulsed high frequency ionization device, the impedance of the load differs greatly before and after each high frequency power pulse arrives, and the effect of impedance matching is distorted near the rising edge of the pulse, and instantaneous power reflection is inevitable; when the high frequency power pulse is removed, the energy stored in the plasma and the discharge cavity will be released, and the impedance of the load will also be distorted again, so the reverse high frequency power generated instantaneously can also be very large or even higher, the harm and danger of which are self-evident. SUMMARY

[0006] The application is a pulse width internal impedance matching method of a pulse high-frequency ionization device, aiming at solving the problem that the impedance of the load is greatly different when each high-frequency power pulse comes and leaves, and the reverse high-frequency power generated instantaneously can also be very large or even higher, which is self-evident in its harm and danger.

[0007] The application solves the technical problem by adopting the following technical solution:

[0008] The pulse width internal impedance matching method of the pulse high-frequency ionization device is based on a dual-frequency driving device, which is sequentially provided from one side to the other side with a dual-frequency signal controller 10, a dual-frequency cosine digital waveform generator 20, a high-frequency high-frequency digital carrier modulation path 30 and a low-frequency high-frequency digital carrier modulation path 31, and a dual high-frequency digital-analog conversion output driving module 40.

[0009] The dual-frequency signal controller 10 is used to generate a dual-frequency frequency control signal and a dual-frequency amplitude control signal with an intrinsic dual-frequency time delay control feature, and send the dual-frequency frequency control signal to the dual-frequency cosine digital waveform generator 20, and send the dual-frequency amplitude control signal with the intrinsic time delay feature to the high-frequency high-frequency digital carrier modulation path 30 and the low-frequency high-frequency digital carrier modulation path 31 respectively.

[0010] The dual-frequency cosine digital waveform generator 20 is used to convert the received dual-frequency frequency control signal into a cosine signal and send it to the high-frequency high-frequency digital carrier modulation path 30 and the low-frequency high-frequency digital carrier modulation path 31 respectively.

[0011] The high-frequency high-frequency digital carrier modulation path 30 is used to multiply the received cosine signal by the received dual-frequency amplitude control signal with the intrinsic dual-frequency time delay control feature, to realize modulation of the high-frequency high-frequency digital carrier signal; the low-frequency high-frequency digital carrier modulation path 31 is used to multiply the received cosine signal by the received dual-frequency amplitude control signal with the intrinsic dual-frequency time delay control feature, to realize modulation of the low-frequency high-frequency digital carrier signal.

[0012] The dual high-frequency digital-analog conversion output driving module 40 is used to perform digital-analog conversion on the modulated high-frequency high-frequency digital carrier signal and the modulated low-frequency high-frequency digital carrier signal, and send the continuous output high-frequency driving signal after digital-analog conversion to a third-party low-power high-frequency power source; send the pulse output high-frequency driving signal after digital-analog conversion to a third-party low-power high-frequency power source; and send the pulse output low-frequency driving signal after digital-analog conversion to a third-party high-power high-frequency power source.

[0013] The frequency signal sent by the dual-frequency signal controller 10 to the dual-frequency cosine digital waveform generator 20 is a high-frequency high-frequency control signal FREQ10 and a low-frequency high-frequency control signal FREQ11;

[0014] The amplitude signal sent by the dual-frequency signal controller 10 to the high-frequency high-frequency digital carrier modulation path 30 and the low-frequency high-frequency digital carrier modulation path 31 is a high-frequency high-frequency path modulation signal AMPL12 and a low-frequency high-frequency path modulation signal AMPL13.

[0015] The modulated signal sent by the high-frequency high-frequency digital carrier modulation path 30 to the dual high-frequency digital-analog conversion output driving module 40 and the modulated signal sent by the low-frequency high-frequency digital carrier modulation path 31 to the dual high-frequency digital-analog conversion output driving module 40 are both digital high-frequency high-frequency modulated signals DMOD30 and digital low-frequency high-frequency modulated signals DMOD31.

[0016] The pulse width impedance matching method comprises the following steps:

[0017] Step one, an overlapping area is added between the high-frequency low-power pulse and the low-frequency high-power pulse of the pulse high-frequency ionization device, and a low-density background plasma with a certain high-frequency power receiving effect is generated through the overlapping area;

[0018] Step two, a dual-frequency driving device is used to fine-tune the rising edge and the falling edge of the high-power low-frequency pulse, and improve the instantaneous impedance matching effect of the rising edge and the falling edge of the low-frequency high-power pulse.

[0019] Further, the overlapping area of step one is a pre-ionization area relative to the low-frequency high-power pulse, that is, in the overlapping area, the high-frequency low-power pulse generates a low-density plasma in advance to improve the low-frequency high-frequency power receiving effect; the low-density plasma is the density of the generated plasma that can just ensure that the low-frequency high-power pulse can be in a stable state when the low-frequency high-power pulse arrives.

[0020] Further, the overlapping area is generated by extending the falling edge of the high-frequency low-power pulse to a set time after the rising edge of the low-frequency high-power pulse, and the density of the plasma generated by the set time can just ensure that the low-frequency high-power pulse can be in a stable state when the low-frequency high-power pulse arrives.

[0021] Further, when the high-frequency low-power pulse is 13.56MHz and the low-frequency high-power pulse is 2MHz, the set time is 80 microseconds.

[0022] Further, the step two uses the dual-frequency driving device to fine-tune the rising edge and falling edge of the low-frequency high-power pulse, and improve the instantaneous impedance matching effect of the rising edge and falling edge of the low-frequency high-power pulse, specifically: by fine-tuning the frequency and amplitude of the rising edge and falling edge of the low-frequency high-power pulse through the dual-frequency driving device, the power reflection when the low-frequency high-power pulse arrives and when it is removed is minimized.

[0023] Further, the dual-frequency driving device fine-tunes the frequency of the rising edge and falling edge of the low-frequency high-power pulse, specifically: the low-frequency high-frequency frequency control signal FREQ11 sequence sent by the dual-frequency signal controller 10 to the low-frequency high-frequency digital carrier modulation path 31 fine-tunes the frequency of the rising edge and falling edge of the low-frequency high-power pulse, and reduces the reflection at the rising edge and falling edge of the low-frequency high-power pulse.

[0024] Further, the dual-frequency driving device fine-tunes the amplitude of the rising edge and falling edge of the low-frequency high-power pulse, specifically: the low-frequency high-frequency frequency amplitude signal AMPL13 sequence sent by the dual-frequency signal controller 10 to the low-frequency high-frequency digital carrier modulation path 31 fine-tunes the amplitude of the rising edge and falling edge of the low-frequency high-power pulse, and further reduces the reflection at the rising edge and falling edge of the low-frequency high-power pulse.

[0025] Further, when the frequency A corresponding to the lowest instantaneous reflection coefficient when the low-frequency high-power pulse arrives and the frequency B corresponding to the lowest average reflection coefficient within each pulse through a third party device is compared, the frequency A is lower, the dual-frequency driving device adjusts the frequency of the rising edge and falling edge of the low-frequency high-power pulse to A, and restores the frequency of the middle region of the pulse width to B.

[0026] Further, when the frequency A corresponding to the lowest instantaneous reflection coefficient when the low-frequency high-power pulse arrives and the frequency B corresponding to the lowest average reflection coefficient within each pulse through a third party device is compared, the frequency A is higher, the dual-frequency driving device adjusts the frequency of the rising edge and falling edge of the low-frequency high-power pulse to A, and adjusts the frequency of the middle region of the pulse width to B.

[0027] Further, when the frequency of the low-frequency high-power pulse is 2MHz, and the frequency corresponding to the lowest impedance in the pulse width region is 1.95MHz, the dual-frequency driving device adjusts the frequency of the rising edge and falling edge of the low-frequency high-power pulse to 1.95MHz, and adjusts the frequency of the middle region of the pulse width to 2MHz.

[0028] Advantages and effects of the present application

[0029] 1. The application selects an 80-microsecond superposition area between high-frequency low power and low-frequency high power, which improves the great reflection intensity of power when low-frequency high-power pulses arrive, and reduces the risk of very high or even higher reverse high-frequency power generated instantaneously.

[0030] 2. The application not only uses a superposition area to improve the great reflection intensity of power when low-frequency high-power pulses arrive, but also uses a dual-frequency driving device to further fine-tune the rising edge and falling edge of the low-frequency high-power pulse, thereby further reducing the risk of very high or even higher reverse high-frequency power generated instantaneously. BRIEF DESCRIPTION OF DRAWINGS

[0031] Figure 1 The flow chart of the pulse high-frequency ionization device impedance matching method of the application;

[0032] Figure 2 The high-frequency power, reflection, and impedance schematic diagram of the prior art;

[0033] Figure 3 The low-density plasma background schematic diagram generated by the application by adding a superposition area;

[0034] Figure 4 The schematic diagram of the application using a dual-frequency driving device to fine-tune the rising edge and falling edge of the high-power pulse;

[0035] Figure 5 The reflection power comparison schematic diagram before and after the improvement of the application;

[0036] Figure 6 The reflection coefficient and frequency relationship schematic diagram;

[0037] Figure 7 The application effect diagram of the dual-frequency driving device of the application;

[0038] Figure 8 The structure diagram of the dual-frequency driving device for the pulse high-frequency ionization device of the application;

[0039] Figure 9 The adjustable dual-frequency vector impedance matching structure and device schematic diagram of the prior art. DETAILED DESCRIPTION

[0040] Design principle of the application

[0041] 1. The innovation of the present application: The innovation lies in the method of taking multiple measures to reduce the distortion of load impedance in the moment when low-frequency high-power pulse comes and goes, and the effect of impedance matching suddenly deteriorates near the rising edge of the pulse, which makes the instantaneous power reflection huge; the multiple measures are to increase a superimposed area (the superimposed area between the high-frequency low-power pulse and the low-frequency high-power pulse) and fine-tune the rising edge and falling edge of the low-frequency high-power pulse.

[0042] 2. The difference between the present application and the prior art: The prior art generally does not use the superimposed method for double-frequency pulse, because it is not easy to handle the superposition of two frequencies, therefore, generally, the two pulses are taken as independent time periods without superposition. However, the present application does the opposite, that is, it increases the superimposed area. The method of increasing the superimposed area is to use the double-frequency signal controller 10 of the double-frequency driving device to generate a double-frequency amplitude control signal with intrinsic double-frequency time delay control characteristics, and send the double-frequency frequency control signal to the double-frequency cosine / sine digital waveform generator 20, and send the double-frequency amplitude control signal with intrinsic time delay characteristics to the high-frequency high-frequency digital carrier modulation path 30 and the low-frequency high-frequency digital carrier modulation path 31, thereby realizing the "step in unison" of the high-frequency low-power pulse and the low-frequency high-power pulse, that is, controlling the "early" and "late" arrival of the high-frequency low-power pulse and the low-frequency high-power pulse, so as to realize the ordered and controllable superposition between the high-frequency low-power pulse and the low-frequency high-power pulse.

[0043] 3. Design principle of low-density plasma background: First, use the background of low-density plasma to compensate for the defects of low-frequency high-power pulse in the moment of rising edge, such as Figure 2As shown, when the rising edge of the low-frequency high-power pulse arrives, the plasma generated by the high-frequency low-power pulse is only matched to the high-frequency and mismatched to the low-frequency, although the high-frequency low-power is removed before the low-frequency high-power pulse arrives, but at the moment of its removal, the plasma generated by it still exists, so even without the superposition area, when the following low-frequency high-power pulse arrives, the reflected power at its rising edge will be very high, and the absorbed power will be very small. But if this superposition area is added, the first pulse may absorb very little power, but because the superimposed high-frequency low-power continues to exist and constantly replenishes until enough of the plasma originally matched in the high-frequency low-power state is converted to the low-frequency high-power state. Specifically: the present application continues to generate a low-density plasma background in the 80-microsecond area that will be covered by the low-frequency high-power pulse with a high-frequency low-power pulse when the low-frequency high-power pulse arrives, until the background plasma in this 80-microsecond dual-frequency power superposition area gradually adapts to receive the low-frequency high-power pulse. Therefore, the low-density plasma generated in 80 microseconds can improve the condition that the high-frequency low-power pulse absorbs power poorly and reflects a lot of power at the moment of the rising edge. The reason is: the low-density plasma in the 80-microsecond area promotes the absorption of power by the low-frequency high-power pulse at the moment of the rising edge. Second, the size of the superposition area should take into account the cost of reducing the reflected power and the lengthening of the pulse width of the superposition area, and find a balance point. The cost of lengthening the pulse width of the superposition area is that the frequency of the high-frequency low-power pulse is higher, so the electron temperature generated is also higher, and higher temperature electrons will destroy negative hydrogen ions in the ionization process, which is contrary to the original design of the high-frequency pulse ionization device, so as long as it is considered that the 2MHz pulse arrives at the moment and is stable instead of reflecting too much, the 13.56MHz pulse is removed quickly. Based on this, the superposition area cannot be too long or too short.

[0044] 4. The design principle of fine-tuning the rising edge and falling edge of the high-power low-frequency pulse: as Figure 6 shown, the lowest reflection coefficient is at about 1.95MHz, and the reflection coefficients corresponding to other frequencies on both sides are larger. Therefore, adjusting the power at the moment of the rising edge and falling edge of the low-frequency high-power pulse to the preferred 1.95MHz can reduce the reflection coefficient at the moment of the rising edge or falling edge to below 0.1. Figure 6 The frequency of 1.95MHz shown is the place where the reflection coefficient is the lowest, which is the result of adjustment using the application number: 2023102699594, the invention name: adjustable dual-frequency vector impedance matching structure and device, the adjustment principle is seen in Figure 9 , which will not be repeated here. Based on the matching of the 2MHz low-frequency high-power pulse achieved by the adjustment of the present application, the rising edge and falling edge of the low-frequency high-power pulse are fine-tuned.

[0045] The application will be further explained in connection with the accompanying drawings:

[0046] A pulse width internal impedance matching method of a pulse high frequency ionization device as shown in Figure 1 The method is based on a dual frequency driving device as shown in Figure 7 、 Figure 8 The dual frequency driving device is sequentially provided with a dual frequency signal controller 10, a dual frequency cosine digital waveform generator 20, a high frequency high frequency digital carrier wave modulation path 30 and a low frequency high frequency digital carrier wave modulation path 31, and a dual high frequency digital-analog conversion output driving module 40 from one side to the other side;

[0047] The dual frequency signal controller 10 is used for generating a dual frequency frequency control signal and a dual frequency amplitude control signal with an intrinsic dual frequency time delay control feature, and sending the dual frequency frequency control signal to the dual frequency cosine digital waveform generator 20, and sending the dual frequency amplitude control signal with the intrinsic time delay feature to the high frequency high frequency digital carrier wave modulation path 30 and the low frequency high frequency digital carrier wave modulation path 31 respectively;

[0048] The dual frequency cosine digital waveform generator 20 is used for converting the received dual frequency frequency control signal into a cosine signal and sending it to the high frequency high frequency digital carrier wave modulation path 30 and the low frequency high frequency digital carrier wave modulation path 31 respectively;

[0049] The high frequency high frequency digital carrier wave modulation path 30 is used for multiplying the received cosine signal by the received dual frequency amplitude control signal with the intrinsic dual frequency time delay control feature, to realize modulation of the high frequency high frequency digital carrier wave signal; the low frequency high frequency digital carrier wave modulation path 31 is used for multiplying the received cosine signal by the received dual frequency amplitude control signal with the intrinsic dual frequency time delay control feature, to realize modulation of the low frequency high frequency digital carrier wave signal;

[0050] The dual high frequency digital-analog conversion output driving module 40 is used for digital-analog conversion of the modulated high frequency high frequency digital carrier wave signal and the modulated low frequency high frequency digital carrier wave signal, and sending the continuous output high frequency driving signal after digital-analog conversion to a third party low power high frequency power source; sending the pulse output high frequency driving signal after digital-analog conversion to a third party low power high frequency power source; and sending the pulse output low frequency driving signal after digital-analog conversion to a third party high power high frequency power source;

[0051] The frequency signal sent by the dual frequency signal controller 10 to the dual frequency cosine digital waveform generator 20 is a high frequency high frequency control signal FREQ10 and a low frequency high frequency control signal FREQ11;

[0052] The amplitude signals sent by the dual-frequency signal controller 10 to the high-frequency high-frequency digital carrier modulation channel 30 and the low-frequency high-frequency digital carrier modulation channel 31 are high-frequency high-frequency channel modulation signals AMPL12 and low-frequency high-frequency channel modulation signals AMPL13.

[0053] The modulated signals sent by the high-frequency high-frequency digital carrier modulation channel 30 to the dual high-frequency digital-analog conversion output driving module 40 and the modulated signals sent by the low-frequency high-frequency digital carrier modulation channel 31 to the dual high-frequency digital-analog conversion output driving module 40 are digital high-frequency high-frequency modulated signals DMOD30 and digital low-frequency high-frequency modulated signals DMOD31.

[0054] The pulse width impedance matching method comprises the following steps:

[0055] Step one, an overlapping area is added between the high-frequency low-power pulse and the low-frequency high-power pulse of the pulse high-frequency ionization device, and a low-density background plasma with a certain high-frequency power receiving effect is generated through the overlapping area;

[0056] Step two, a dual-frequency driving device is used to fine-tune the rising edge and the falling edge of the high-power low-frequency pulse, and improve the instantaneous impedance matching effect of the rising edge and the falling edge of the low-frequency high-power pulse.

[0057] The overlapping area of step one is as shown in Figure 3 The overlapping area is a pre-ionization area relative to the low-frequency high-power pulse, and the pre-ionization area is that the high-frequency low-power pulse generates a low-density plasma in the overlapping area to improve the low-frequency high-frequency power receiving effect; the low-density plasma is the density of the generated plasma that can ensure that the low-frequency high-power pulse can be in a stable state when the low-frequency high-power pulse arrives.

[0058] As shown in Figure 3 The overlapping area is that the falling edge of the high-frequency low-power pulse is extended to a set time after the rising edge of the low-frequency high-power pulse, and the density of the plasma generated by the set time can ensure that the low-frequency high-power pulse can be in a stable state when the low-frequency high-power pulse arrives.

[0059] As shown in Figure 3 When the high-frequency low-power pulse is 13.56MHz and the low-frequency high-power pulse is 2MHz, the set time is 80 microseconds.

[0060] The step two uses the dual-frequency driving device to fine-tune the rising edge and the falling edge of the low-frequency high-power pulse, and improves the instantaneous impedance matching effect of the rising edge and the falling edge of the low-frequency high-power pulse, specifically: through the dual-frequency driving device, the frequency and the amplitude of the rising edge and the falling edge of the low-frequency high-power pulse are fine-tuned, so that the power reflection when the low-frequency high-power pulse arrives and when the low-frequency high-power pulse is removed is the lowest.

[0061] As shown in the frequency-time diagram of Figure 8 and Figure 4 , the dual-frequency driving device fine-tunes the frequency of the rising edge and the falling edge of the low-frequency high-power pulse, specifically: the low-frequency high-frequency frequency control signal FREQ11 sequence sent by the dual-frequency signal controller 10 to the low-frequency high-frequency digital carrier modulation path 31 fine-tunes the frequency of the rising edge and the falling edge of the low-frequency high-power pulse, and reduces the reflection of the rising edge and the falling edge of the low-frequency high-power pulse.

[0062] As shown in the amplitude-time diagram of Figure 8 and Figure 4 , further, the dual-frequency driving device fine-tunes the amplitude of the rising edge and the falling edge of the low-frequency high-power pulse, specifically: the low-frequency high-frequency frequency amplitude signal AMPL13 sequence sent by the dual-frequency signal controller 10 to the low-frequency high-frequency digital carrier modulation path 31 fine-tunes the amplitude of the rising edge and the falling edge of the low-frequency high-power pulse, and further reduces the reflection of the rising edge and the falling edge of the low-frequency high-power pulse.

[0063] Supplementary note:

[0064] As shown in Figure 4 , the application can also further reduce the reflection of the rising edge and the falling edge by the way of amplitude modulation, but the amplitude cannot be reduced too much, otherwise for the rising edge, a longer overlap section is needed to realize the conversion of the plasma matching the low-frequency high-power pulse, so that the negative hydrogen is less and the electron load on the anode is more; for the falling edge, the pulse width of the generated instantaneous high-current negative hydrogen is also compressed.

[0065] As shown in Figure 5 , Figure 6 , when the frequency A corresponding to the lowest instantaneous reflection coefficient when the low-frequency high-power pulse arrives is lower than the frequency B which is the lowest average reflection coefficient in each pulse through the third party device, the dual-frequency driving device adjusts the frequency of the rising edge and the falling edge of the low-frequency high-power pulse to A, and restores the frequency of the middle region of the pulse width to B.

[0066] Further, when the corresponding instantaneous reflection coefficient of the low frequency high power pulse is the lowest frequency A and the third party device is passed through, so that the average reflection coefficient of each pulse is the lowest frequency B, the frequency A is higher, the frequency of the rising edge and the falling edge of the low frequency high power pulse is adjusted to A, and the frequency of the pulse width intermediate region is adjusted to B by using the dual frequency driving device.

[0067] As shown in Figure 5 , Figure 6 when the frequency of the low frequency high power pulse is 2MHz, and the corresponding frequency of the lowest impedance in the pulse width region is 1.95MHz, the frequency of the rising edge and the falling edge of the low frequency high power pulse is adjusted to 1.95MHz, and the frequency of the pulse width intermediate region is adjusted to 2MHz by using the dual frequency driving device.

[0068] It should be emphasized that the above specific embodiments are only an explanation of the present application, and are not a limitation of the present application. Those skilled in the art can make modifications to the above embodiments without creative contribution after reading the present specification, but as long as it is within the scope of the claims of the present application, it is protected by the patent law.

Claims

1. A pulse width internal impedance matching method of a pulse high frequency ionization device, which is based on a double frequency driving device, which is provided with a double frequency signal controller (10), a double frequency cosine / sine digital waveform generator (20), a high frequency high frequency digital carrier wave modulation path (30) and a low frequency high frequency digital carrier wave modulation path (31), and a double high frequency digital-analog conversion output driving module (40) in sequence from one side to the other side; the double frequency signal controller (10) is used for generating a double frequency frequency control signal and a double frequency amplitude control signal with an intrinsic double frequency time delay control feature, and sending the double frequency frequency control signal to the double frequency cosine / sine digital waveform generator (20), and sending the double frequency amplitude control signal with the intrinsic time delay feature to the high frequency high frequency digital carrier wave modulation path (30) and the low frequency high frequency digital carrier wave modulation path (31) respectively; the double frequency cosine / sine digital waveform generator (20) is used for converting the received double frequency frequency control signal into a cosine / sine signal and sending it to the high frequency high frequency digital carrier wave modulation path (30) and the low frequency high frequency digital carrier wave modulation path (31) respectively; the high frequency high frequency digital carrier wave modulation path (30) is used for multiplying the received cosine / sine signal by the received double frequency amplitude control signal with the intrinsic double frequency time delay control feature, to realize modulation of a high frequency high frequency digital carrier signal; the low frequency high frequency digital carrier wave modulation path (31) is used for multiplying the received cosine / sine signal by the received double frequency amplitude control signal with the intrinsic double frequency time delay control feature, to realize modulation of a low frequency high frequency digital carrier signal; the double high frequency digital-analog conversion output driving module (40) is used for digital-analog conversion of the modulated high frequency high frequency digital carrier signal and the modulated low frequency high frequency digital carrier signal, and sending the continuously outputted high frequency driving signal after digital-analog conversion to a third party's low power high frequency power source; sending the pulsed outputted high frequency driving signal after digital-analog conversion to a third party's low power high frequency power source; and sending the pulsed outputted low frequency driving signal after digital-analog conversion to a third party's high power high frequency power source; the frequency signal sent by the double frequency signal controller (10) to the double frequency cosine / sine digital waveform generator (20) is a high frequency high frequency frequency control signal (FREQ10) and a low frequency high frequency frequency control signal (FREQ11); the amplitude signal sent by the double frequency signal controller (10) to the high frequency high frequency digital carrier wave modulation path (30) and the low frequency high frequency digital carrier wave modulation path (31) is a high frequency high frequency path modulation signal (AMPL12) and a low frequency high frequency path modulation signal (AMPL13); the modulated signal sent by the high frequency high frequency digital carrier wave modulation path (30) to the double high frequency digital-analog conversion output driving module (40) and the modulated signal sent by the low frequency high frequency digital carrier wave modulation path (31) to the double high frequency digital-analog conversion output driving module (40) are both digital high frequency high frequency modulated signals (DMOD30) and digital low frequency high frequency modulated signals (DMOD31). characterized in that The pulse width internal impedance matching method comprises the following steps: Step one, an overlapping area is added between the high-frequency low-power pulse and the low-frequency high-power pulse of the pulse high-frequency ionization device, and a low-density plasma background with a certain high-frequency power receiving effect is generated through the overlapping area; Step two, a dual-frequency driving device is used to fine-tune the rising edge and falling edge of the high-power low-frequency pulse, and improve the instantaneous impedance matching effect of the rising edge and falling edge of the low-frequency high-power pulse.

2. The pulse width internal impedance matching method of the pulse high-frequency ionization device according to claim 1, characterized in that The overlapping area of step one, that is, the overlapping area is a pre-ionization area relative to the low-frequency high-power pulse, and the pre-ionization area is that the high-frequency low-power pulse generates a low-density plasma in the overlapping area for improving the low-frequency high-power receiving effect; the low-density plasma is a plasma with a density that can ensure that the low-frequency high-power pulse is in a stable state when the low-frequency high-power pulse arrives.

3. The method of claim 1, wherein the pulse width impedance matching method is characterized by: The overlapping area is that the falling edge of the high-frequency low-power pulse is extended to a set time after the rising edge of the low-frequency high-power pulse, and the density of the plasma generated by the set time is just enough to ensure that the low-frequency high-power pulse is in a stable state when the low-frequency high-power pulse arrives.

4. The method of claim 3, wherein the impedance matching is performed within the pulse width of the pulsed high frequency ionization device. When the high-frequency low-power pulse is 13.56 MHz and the low-frequency high-power pulse is 2 MHz, the set time is 80 microseconds.

5. The method of claim 1, wherein the pulse width impedance matching method is characterized by: The dual-frequency driving device of step two fine-tunes the rising edge and falling edge of the low-frequency high-power pulse, and improves the instantaneous impedance matching effect of the rising edge and falling edge of the low-frequency high-power pulse, specifically: through the dual-frequency driving device, the frequency and amplitude of the rising edge and falling edge of the low-frequency high-power pulse are fine-tuned, so that the power reflection when the low-frequency high-power pulse arrives and when it is removed is the lowest.

6. The method of claim 5, wherein the impedance matching is performed within the pulse width of the pulsed high frequency ionization device. The dual-frequency driving device fine-tunes the frequency of the rising edge and falling edge of the low-frequency high-power pulse, specifically: the low-frequency high-frequency frequency control signal (FREQ11) sequence sent by the dual-frequency signal controller (10) to the low-frequency high-frequency digital carrier modulation path (31) fine-tunes the frequency of the rising edge and falling edge of the low-frequency high-power pulse, and reduces the reflection of the rising edge and falling edge of the low-frequency high-power pulse.

7. The method of claim 5, wherein the impedance matching is performed within the pulse width of the pulsed high frequency ionization device. The dual-frequency driving device fine-tunes the amplitude of the rising edge and falling edge of the low-frequency high-power pulse, specifically: the low-frequency high-frequency path modulation signal (AMPL13) sequence sent by the dual-frequency signal controller (10) to the low-frequency high-frequency digital carrier modulation path (31) fine-tunes the amplitude of the rising edge and falling edge of the low-frequency high-power pulse, and further reduces the reflection of the rising edge and falling edge of the low-frequency high-power pulse.

8. The method of claim 6, wherein the impedance matching is performed within the pulse width of the pulsed high frequency ionization device. When the corresponding instantaneous reflection coefficient of the frequency A when the low-frequency high-power pulse arrives is the lowest, and the frequency B that makes the average reflection coefficient of each pulse the lowest through a third-party device is lower than the frequency A, the frequency of the rising edge and falling edge of the low-frequency high-power pulse is adjusted to A by the dual-frequency driving device, and the frequency of the middle region of the pulse width is restored to B.

9. The method of claim 6, wherein the impedance matching is performed within the pulse width of the pulsed high frequency ionization device. When the frequency corresponding to the lowest instantaneous reflection coefficient of the low-frequency high-power pulse is A and the frequency corresponding to the lowest average reflection coefficient in each pulse is B, and the frequency A is higher than the frequency B, the frequency of the rising edge and the falling edge of the low-frequency high-power pulse is adjusted to A, and the frequency of the middle region of the pulse width is adjusted to B by using the dual-frequency driving device.

10. The method of claim 8, wherein the impedance matching is performed within the pulse width of the pulsed high frequency ionization device. When the frequency of the low-frequency high-power pulse is 2 MHz, and the frequency corresponding to the lowest impedance in the pulse width region is 1.95 MHz, the frequency of the rising edge and the falling edge of the low-frequency high-power pulse is adjusted to 1.95 MHz, and the frequency of the middle region of the pulse width is adjusted to 2 MHz by using the dual-frequency driving device.

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