Integrated device, manufacturing method, integrated circuit, detection device and terminal

Abstract

The invention provides an integrated device, a manufacturing method, an integrated circuit, a detection device and a terminal, and the detection device can be a laser radar, relates to the technical field of electronics, and is used for reducing parasitism introduced into the integrated device so as to improve the effective energy conversion efficiency of the integrated device. The integrated device comprises a laser which comprises an anode, a cathode and a first substrate; the capacitor comprises a second substrate, an insulating layer and a comb-tooth-shaped first metal layer, and the insulating layer is attached to the first metal layer; wherein the first substrate is in contact with the second substrate, so that the distance between the laser and the capacitor is reduced in a three-dimensional layout mode; the anode is embedded into the first substrate and is connected with the second substrate, so that interconnection between the laser and the capacitor is realized, additional interconnection wires do not need to be arranged between the laser and the capacitor, and parasitism introduced into the integrated device is greatly reduced.

Description

Integrated device, manufacturing method, integrated circuit, detection device and terminal Technical Field

[0001] The present application relates to the field of electronic technology, and in particular to an integrated device, a manufacturing method, an integrated circuit, a detection device, and a terminal. Background Art

[0002] LiDAR (light detection and ranging) is an optical measurement device that operates by emitting a laser signal toward an object and receiving a reflected return signal. The device then compares the return signal with the laser signal to determine parameters such as the object's position and distance. LiDAR accurately scans surrounding objects to form high-definition images, enabling rapid object identification and decision-making. It has been widely used in applications such as smart cars, intelligent transportation, 3D urban mapping, and atmospheric environmental monitoring.

[0003] LiDARs have a variety of components, and their layout on printed circuit boards (PCBs) currently introduces significant additional parasitics. For example, the traces between components on the PCB introduce additional parasitic resistance and inductance into the circuit. The longer the traces, the greater the parasitic values. As a result, during LiDAR operation, more energy is consumed by parasitics, reducing the effective energy conversion efficiency of the laser.

[0004] Summary of the Invention

[0005] The present application provides an integrated device, a manufacturing method, an integrated circuit, a detection device and a terminal, which are used to reduce parasitics introduced into the integrated device and improve the effective energy conversion efficiency of the integrated device.

[0006] In the first aspect, the present application provides an integrated device, which includes: a laser (for example, the laser can be a laser diode capable of emitting a wavelength of 905 nanometers), including: an anode, a cathode and a first substrate; a capacitor, including: a second substrate, an insulating layer and a first metal layer in the shape of a comb, the insulating layer is arranged in contact with the first metal layer, and the shape of the insulating layer can be a "bow" shape; wherein the first substrate and the second substrate are in contact (that is, there is no other medium or device between the first substrate and the second substrate, but they are in direct contact), and the anode is embedded in the first substrate and connected to the second substrate (that is, the anode extends into the first substrate and penetrates the first substrate, and is connected to the second substrate).

[0007] In the above technical solution, by stacking and contacting the first substrate in the laser and the second substrate of the capacitor, the distance between the laser and the capacitor can be reduced by a three-dimensional layout, and at the same time, the anode of the laser is embedded in the first substrate and connected to the second substrate to achieve the interconnection between the laser and the capacitor, thereby eliminating the need to set additional interconnection wiring between the laser and the capacitor, thereby greatly reducing the parasitics (such as parasitic inductance and parasitic resistance) introduced in the integrated device structure, and thus improving the effective energy conversion efficiency of the integrated device. The integrated device obtained by the above-mentioned manufacturing method can reduce the interconnection length between the laser and the capacitor from hundreds of micrometers (um) level to um level. In addition, the above-mentioned first metal layer in the shape of comb teeth can also increase the specific surface area of ​​the capacitor, thereby facilitating heat dissipation and reducing heat loss.

[0008] In a possible implementation of the first aspect, the first substrate and the second substrate are integrally formed. Here, the first substrate and the second substrate are integrally formed to each other, which may mean that the first substrate and the second substrate are two parts of the same substrate formed in one process. In a possible example, the first substrate and the second substrate may be the upper and lower parts of the same wafer. The above-mentioned integral formation of the first substrate and the second substrate can save a wafer, and can also save the process materials and process costs required for bonding two wafers (for example, bonding by back-end grinding and bonding).

[0009] In one possible implementation of the first aspect, the material of the first substrate and the material of the second substrate are the same or different. In one possible example, the materials of the first substrate and the second substrate are the same. For example, the materials of the first substrate and the second substrate may both be aluminum gallium arsenide (AlGaAs) and / or gallium arsenide (GaAs). In another possible example, the materials of the first substrate and the second substrate are different. For example, the material of the first substrate may be AlGaAs and the material of the second substrate may be GaAs; or, the material of the first substrate may be GaAs and the material of the second substrate may be AlGaAs. In the above possible implementation, because the lattice constant of AlGaAs and the lattice constant of the GaAs layer are different, and the lattice constant of AlGaAs is smaller than the lattice constant of the GaAs layer, AlGaAs and GaAs are subjected to compressive strain in the xy directions (i.e., directions parallel to the substrate and perpendicular to each other) and tensile strain in the z direction (i.e., a direction perpendicular to the substrate). As a result, the electrons in AlGaAs and GaAs have greater mobility and correspondingly lower resistivity, thereby significantly reducing the parasitic resistance of the integrated device and improving the performance of the integrated device. In addition, since AlGaAs has good electrical conductivity, the use of an AlGaAs layer can further reduce the resistance of the AlGaAs itself, thereby further improving the performance of the integrated device.

[0010] In one possible implementation of the first aspect, the cathode is located on a side of the first substrate away from the second substrate. In one example, the first substrate is located above the second substrate, and the cathode is disposed on the upper surface of the first substrate. Furthermore, in one example, the cathode may include multiple sub-electrodes, which may be dispersedly distributed on the side of the first substrate away from the second substrate.

[0011] In a possible implementation of the first aspect, the second substrate is a low-resistivity (or heavily doped) substrate. In this case, the capacitor has an MIS structure and includes a second substrate, an insulating layer, and a first metal layer.

[0012] In one possible implementation of the first aspect, the second substrate is a high-resistivity substrate, and the capacitor further includes a second metal layer located between the second substrate and the insulating layer. The anode is embedded in the second substrate and connected to the second metal layer. That is, the second substrate can be a lightly doped or undoped substrate. In this case, the capacitor C has a MIM structure and includes the second substrate, the second metal layer, the insulating layer, and the first metal layer.

[0013] In one possible implementation of the first aspect, at least two comb teeth in the first metal layer have the same or different heights. The height of each comb tooth may refer to the height by which the comb tooth extends into the interior of the second substrate. For example, all comb teeth in the first metal layer may have the same height; or, among all comb teeth in the first metal layer, some may have different heights from other comb teeth.

[0014] In a possible implementation of the first aspect, the maximum height of the comb teeth in the first metal layer is less than the thickness of the second substrate. That is, the comb teeth of the first metal layer do not penetrate the side of the second substrate close to the first substrate.

[0015] In a second aspect, the present application provides a method for manufacturing an integrated device, which includes a laser and a capacitor, the laser (for example, the laser can be a laser diode capable of emitting a wavelength of 905 nanometers) including an anode, a cathode and a first substrate, the capacitor including a second substrate, an insulating layer and a first metal layer in a comb-shaped shape, the method including: forming a first substrate and a second substrate, the first substrate and the second substrate being in contact with each other (that is, there is no other medium or device between the first substrate and the second substrate, but they are in direct contact); forming the cathode and an anode embedded in the first substrate on the first substrate, the anode being embedded in the first substrate and connected to the second substrate (that is, the anode extends into the first substrate and penetrates the first substrate and is then connected to the second substrate); forming a plurality of grooves on a side of the second substrate away from the first substrate, the depth of the grooves being less than the thickness of the second substrate; forming the insulating layer on the surface of the second substrate having the plurality of grooves, and forming a first metal layer in a comb-shaped shape on the insulating layer, the thickness of the insulating layer being less than half of the radial width of the grooves.

[0016] In one possible implementation of the second aspect, the first substrate and the second substrate are integrally formed. Here, the first substrate and the second substrate being integrally formed may mean that the first substrate and the second substrate are two parts of the same substrate formed in a single process. In one possible example, the first substrate and the second substrate may be the upper and lower parts of the same wafer.

[0017] In a possible implementation of the second aspect, the material of the first substrate and the material of the second substrate are the same or different. In one possible example, the materials of the first substrate and the second substrate are the same. In another possible example, the materials of the first substrate and the second substrate are different.

[0018] In a possible implementation of the second aspect, the cathode is located on a side of the first substrate away from the second substrate, and the cathode and the anode embedded in the first substrate are formed on the first substrate, including: forming the cathode on a side of the first substrate away from the second substrate, and forming an anode embedded in the first substrate and connected to the second substrate.

[0019] In a possible implementation of the second aspect, the second substrate is a high-resistivity substrate, and the capacitor also includes: a second metal layer, the second metal layer is located between the second substrate and the insulating layer, and the anode is embedded in the second substrate and connected to the second metal layer; the insulating layer is formed on the surface of the second substrate having the multiple grooves, including: forming the second metal layer on the surface of the second substrate having the multiple grooves; forming the insulating layer on the second metal layer, and the sum of the thickness of the second metal layer and the thickness of the insulating layer is less than half of the radial width of the groove.

[0020] In one possible implementation of the second aspect, at least two comb teeth in the first metal layer have the same or different heights. For example, all comb teeth in the first metal layer have the same height; or, among all comb teeth in the first metal layer, some have different heights from other comb teeth.

[0021] In a possible implementation of the second aspect, the height of the comb teeth in the first metal layer is less than the thickness of the second substrate. That is, the comb teeth of the first metal layer do not penetrate the side of the second substrate close to the first substrate.

[0022] In a third aspect, the present application provides an integrated circuit, comprising: an integrated device as provided in the first aspect or any possible implementation of the first aspect; a switching device, comprising a first electrode and a second electrode located on the same side; wherein the integrated device is arranged on the switching device, the cathode of the laser in the integrated device is connected to the first electrode through a wiring, and the first metal layer of the capacitor in the integrated device is in contact with the second electrode.

[0023] In a fourth aspect, the present application provides a detection device, which includes: an integrated device as provided in the first aspect or any possible implementation of the first aspect, or includes an integrated circuit as provided in the second aspect.

[0024] In a fifth aspect, the present application provides a terminal, comprising: the integrated device provided in the first aspect or any possible implementation of the first aspect, or the integrated circuit provided in the second aspect. Optionally, the terminal is a vehicle.

[0025] It can be understood that the beneficial effects that can be achieved by any of the manufacturing methods, integrated circuits, detection devices and terminals provided above can refer to the beneficial effects of the integrated devices provided above, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] FIG1 is a schematic diagram of an application scenario of a laser radar provided in an embodiment of the present application;

[0027] FIG2 is a schematic diagram of the internal architecture of a laser radar provided in an embodiment of the present application;

[0028] FIG3A is a schematic structural diagram of a transmitting module provided in an embodiment of the present application;

[0029] FIG3B is a schematic structural diagram of another transmitting module provided in an embodiment of the present application;

[0030] FIG4 is a schematic diagram of the layout of components in a transmitting module;

[0031] FIG5 is a schematic structural diagram of an integrated device provided in an embodiment of the present application;

[0032] FIG6 is a schematic structural diagram of another integrated device provided in an embodiment of the present application;

[0033] FIG7 is a schematic diagram of the structure of a capacitor provided in an embodiment of the present application;

[0034] FIG8 is a schematic structural diagram of another integrated device provided in an embodiment of the present application;

[0035] FIG9 is a schematic diagram of the structure of an integrated circuit provided in an embodiment of the present application;

[0036] FIG10 is a schematic diagram of a process for manufacturing an integrated device according to an embodiment of the present application;

[0037] FIG11 is a cross-sectional view of an integrated device provided in an embodiment of the present application during the manufacturing process;

[0038] FIG12 is a flow chart of another method for manufacturing an integrated device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0039] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application.

[0040] The "connection" in the embodiments of the present application can be an electrical connection, and the connection between two electrical components can be a direct or indirect connection between the two electrical components. For example, the connection between A and B can be a direct connection between A and B, or an indirect connection between A and B through one or more other electrical components, such as A and B, or A and C can be directly connected, C and B can be directly connected, and A and B are connected through C. In some scenarios, "connection" can also be understood as coupling, such as electromagnetic coupling between two inductors. In short, the connection between A and B enables the transmission of electrical energy between A and B.

[0041] The terminal names of the electronic components in the embodiments of the present application are merely exemplary and can be understood as connection terminals or connection points for connecting to other circuit components. In other examples, other terminal names, connection terminal names, or connection point names may also be used. For example, in some scenarios, a terminal may also be referred to as a communication terminal, information transmission terminal, terminal, connection terminal, communication connection terminal, information connection terminal, connection point, communication connection point, information connection point, or electrode, etc.

[0042] An embodiment of the present application provides a circuit structure, which can be applied to a detection device, such as a laser radar, in an application scenario. FIG1 exemplarily shows a schematic diagram of an application scenario of a laser radar provided by an embodiment of the present application. In this example, the laser radar 100 is installed on a vehicle, so it is also called a vehicle-mounted laser radar. In addition to vehicle-mounted laser radars, laser radars also include ship-mounted laser radars installed on ships, or airborne laser radars installed on machines, etc. In a possible example, as shown in FIG1 , the laser radar 100 can be installed at the front of the vehicle, so that during the driving of the vehicle, the laser radar 100 can emit a laser signal, which will be reflected by the object after being irradiated by the object, and the reflected target echo signal can be received by the laser radar 100, and then the laser radar 100 detects the environmental information around the vehicle based on the target echo signal, so as to use the environmental information to assist or control the driving functions of the vehicle, such as including but not limited to automatic driving or assisted driving.

[0043] The laser radar 100 can be a mechanical laser radar, a liquid laser radar, a pure solid-state laser radar, or a hybrid solid-state laser radar (also known as a semi-solid-state laser radar), or can be other types of laser radars, and the present embodiment does not specifically limit this. In addition, the housing of the laser radar 100 can be a rectangular parallelepiped as shown in Figure 1, or it can be a cube, a cylinder, a ring, or a special shape, and the present embodiment does not specifically limit the shape of the housing of the detection device.

[0044] Furthermore, FIG2 shows a schematic diagram of the internal architecture of a laser radar provided in an embodiment of the present application. As shown in FIG2 , the laser radar 100 may include a control circuit 110, a transmitting module 120, a scanning module 130, and a receiving module 140. Among them, the transmitting module 120 and the receiving module 140 include optical elements, such as one or more of lenses, filters, polarizers, reflectors, beam splitters, prisms, windows, and scattering plates. The specific number and type of optical elements included are related to the optical design of the transmitting module 120 and the receiving module 140 in the laser radar 100, and are not specifically limited in the embodiment of the present application. The transmitting module 120 may include at least one laser, and the at least one laser may be connected in series or in parallel to emit a detection laser under the control of the control circuit 110. The scanning module 130 may include one or more of a polygonal rotating mirror, an oscillating mirror, a micro-electromechanical system (MEMS) scanning mirror, or a prism. It is used to change the scanning angle of the detection laser emitted by the transmitting module 120 under the control of the control circuit 110 so that the detection laser can scan target objects in the environment. The scanning module 130 is implemented differently in different types of lidars, and some types may not even have a scanning module, such as phased array radars in solid-state lidars. The detection laser emitted by the transmitting module 120 is also reflected by target objects in the environment, generating an echo signal. The receiving module 140 is used to receive the echo signal corresponding to the detection laser under the control of the control circuit 110, convert the echo signal into an electrical signal, and transmit it to the control circuit 110. The control circuit 110 then determines the characteristics of the target object based on the electrical signal. It is understood that the lidar 100 may also include more or fewer components than those shown in Figure 2, and this embodiment of the present application is not specifically limited to this.

[0045] The control circuit 110 may include at least one integrated circuit chip, for example, the control circuit 110 may include at least one processor, and when including multiple processors, the types of the processors included may be the same or different. A processor is an element or circuit with processing capabilities, for example, including one or more of the following types: a general-purpose processor, a field programmable gate array (FPGA), an application specific integrated circuit (ASIC), a neural-network processing unit (NPU), a graphics processing unit (GPU), an application processor (AP), a modem processor, an image signal processor (ISP), a video codec, a digital signal processor (DSP), a baseband processor, a network processor (NP), a digital signal processing circuit (DSP), a microcontroller unit (MCU), a programmable logic device (PLD) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components or other integrated chips. Among them, a general-purpose processor includes, for example, a central processing unit (CPU). In addition, all or part of the integrated circuit chips included in the control circuit 110 may be integrated together and presented in the form of a system on chip (SoC).

[0046] In one possible embodiment, as shown in FIG2 , the transmitting module 120 may include a driver chip, a switch device, a laser, an energy storage element, and a power supply. The input end of the driver chip is connected to the control circuit 110, the output end of the driver chip is connected to the third end (a3) ​​of the switch device, the first end (a1) of the switch device is connected to the first end (b1) of the laser, the second end (b2) of the laser is respectively connected to the second end (d2) of the energy storage element and the positive electrode of the power supply, and the second end (a2) of the switch device is respectively connected to the first end (d1) of the energy storage element and the negative electrode of the power supply and then grounded (i.e., the inverted triangle mark in FIG2 ). (a device, grounding may refer to connecting a component to the ground through a conductor, or setting up a ground circuit and connecting the component to the ground circuit, without specific limitation). The driver chip may be a chip that can drive the switching device to turn on or off, which can usually be achieved by integrating multiple driver devices into an electronic chip. The switching device may be any device that can turn on and off, such as a field-effect transistor (FET), which may be an N-channel metal-oxide-semiconductor switching device (NMOSFET) or a P-channel metal-oxide-semiconductor switching device (PMOSFET), without specific limitation. The laser can be a single laser, a laser chain formed by multiple lasers connected in series, a laser ring formed by multiple lasers connected in parallel, or a laser array formed by multiple lasers connected in series and in parallel. The laser type can be an edge emitting laser (EEL) or a surface emitting laser (SEL). The energy storage element can be an element that can store electrical energy, such as a capacitor (such as a silicon capacitor) or an inductor.

[0047] Using the above embodiment, when controlling the operation of the transmitting module 120, the control circuit 110 can issue periodically recurring pulse control signals. For example, during the first period of a cycle, the control circuit 110 issues a first control signal for turning off the switching device, and during the second period of the cycle, the control circuit 110 issues a second control signal for turning on the switching device. Thus, during the first period of the cycle, the driver chip drives the first terminal a1 and the second terminal a2 of the switching device to disconnect according to the first control signal. At this time, the electrical energy output by the power supply is provided to the energy storage element instead of to the laser, allowing the energy storage element to store the electrical energy output by the power supply. Subsequently, during the second period of the cycle, the driver chip drives the first terminal a1 and the second terminal a2 of the switching device to connect according to the second control signal. At this time, the energy storage element, which had stored energy in the previous period, begins to discharge. This discharge generates a transient current i in the circuit formed by the laser, the switching device, and the energy storage element. This transient current i drives the laser to emit a detection laser. The greater the value of the transient current i, the greater the laser's emitted optical power P. Thus, under the periodically repeated pulse control signal of the control circuit 110 , the laser in the emission module 120 will also emit light periodically accordingly.

[0048] In the embodiment of the present application, there are many possible ways to connect the various components in the transmission module 120. For example, assuming that the switching device is an NMOS tube, the driver chip is a driver integrated circuit chip (DIC), the laser is a single laser (LR), and the energy storage element is a capacitor C, Figure 3A exemplarily shows a schematic diagram of the component connection structure of a transmission module provided in an embodiment of the present application.

[0049] In one example, as shown in FIG3A (a), the first terminal a1 of the switching device refers to the drain of the NMOS transistor, the second terminal a2 of the switching device refers to the source of the NMOS transistor, the third terminal a3 of the switching device refers to the gate of the NMOS transistor, the first terminal b1 of the laser refers to the cathode of the laser LR, and the second terminal b2 of the laser refers to the anode of the laser LR. The specific connection method is as follows: the output terminal of the driver chip DIC is connected to the gate a3 of the NMOS transistor, the drain a1 of the NMOS transistor is connected to the cathode b1 of the laser LR, the anode b2 of the laser LR is respectively connected to the second terminal d2 of the capacitor C and the positive electrode of the power supply, and the source a2 of the NMOS transistor is respectively connected to the first terminal d1 of the capacitor C and the negative electrode of the power supply and then grounded. According to this circuit connection structure, in the process of controlling the operation of the emission module 120, the control circuit 110 can output a low-level first control signal to the driver chip DIC in the first period of a cycle, and output a high-level second control signal to the driver chip DIC in the second period of the cycle. In this way, in the first period of the cycle: the driver chip DIC drives the source a2 and drain a1 of the NMOSFET to be disconnected according to the low level. In this case, the power output by the power supply V cannot be provided to the laser LR, but can be provided to the capacitor C, thereby charging the capacitor C. At this time, since the link where the laser LR is located is disconnected, the laser LR does not emit a detection laser. Thereafter, in the second period of the cycle: the driver chip DIC drives the source a2 and drain a1 of the NMOSFET to be connected according to the high level. In this case, the link where the laser LR is located is conductive, and the capacitor C can discharge to the laser LR, so that the laser LR can emit a detection laser.

[0050] In another example, as shown in FIG3A(b), the first terminal a1 of the switching device refers to the source of the NMOS transistor, the second terminal a2 of the switching device refers to the drain of the NMOS transistor, the third terminal a3 of the switching device refers to the gate of the NMOS transistor, the first terminal b1 of the laser refers to the anode of the laser LR, and the second terminal b2 of the laser refers to the cathode of the laser LR. Specifically, the connection method is as follows: the output terminal of the driver chip DIC is connected to the gate a3 of the NMOS transistor, the source a1 of the NMOS transistor is connected to the cathode b1 of the laser LR, the anode b2 of the laser LR is connected to the second terminal d2 of the capacitor C and the negative electrode of the power supply, and then to ground, and the drain a2 of the NMOS transistor is connected to the first terminal d1 of the capacitor C and the positive electrode of the power supply. The working process of the circuit connection structure shown in (b) of FIG3A and the circuit connection structure shown in (a) of FIG3A are similar. The reason is that the capacitor C is actually formed by two insulated conductors close to each other. In the circuit connection structure shown in (a) of FIG3A, when the capacitor C is charged in the previous period, the conductor constituting the second end d2 thereof is positively charged and the conductor constituting the first end d1 thereof is negatively charged. Therefore, when discharging in the next period, the electric energy output by the conductor constituting the second end d2 of the capacitor C flows through the anode b2 of the laser LR, the cathode b1 of the laser LR, the drain a1 of the NMOS tube, and the NMOS tube in sequence. The electric energy flows from the source a2 of the NMOS tube back to the conductor constituting the first end d1 of the capacitor C, driving the laser LR to emit light. Similarly, in the circuit connection structure shown in (b) of FIG3A , when the capacitor C is charged in the previous period, the conductor constituting its first end d1 is positively charged and the conductor constituting its second end d2 is negatively charged. Therefore, when discharging in the next period, the electric energy output by the conductor constituting the first end d1 of the capacitor C flows through the drain a2 of the NMOS tube, the source a1 of the NMOS tube, the anode b1 of the laser LR, and the cathode b2 of the laser LR in sequence, and then flows back to the conductor constituting the second end d2 of the capacitor C, driving the laser LR to emit light.

[0051] The above content is only an illustrative introduction to two possible component connection methods in the transmission module 120. In actual operation, some modifications can be made to the connection methods shown above. As long as they do not affect the transmission function of the transmission module 120, they are all within the protection scope of the embodiments of the present application. The embodiments of the present application do not make specific limitations on this.

[0052] In addition, some modifications can be made to the components included in the emission module 120, for example, some components in the emission module 120 can be modified to other components that can achieve the same function, such as replacing the above-mentioned NMOS tube with a diode or a PMOS tube. When replaced with a PMOS tube, the PMOS tube is turned on at a low level and disconnected at a high level. Therefore, if the control circuit still sends a low-level first control signal in the first period of a cycle and sends a high-level second control signal in the second period of the cycle, the laser will emit a detection laser in the first period of the cycle and not emit a detection laser in the second period of the cycle. For another example, some components can be added or deleted in the emission module 120. In one possible example, as shown in (a) or (b) in Figure 3B, the emission module 120 can also include a resistor element R, which is connected in series with the power supply V. For example, in one example, as shown in FIG3B (a), the first end of the resistor element R is connected to the positive electrode of the power supply V, and the second end of the resistor element R is connected to the anode b2 of the laser LR and the second end d2 of the capacitor C. Alternatively, the first end of the resistor element R is connected to the negative electrode of the power supply V, and the second end of the resistor element R is connected to the source a2 of the NMOS transistor and the first end d1 of the capacitor C, and then is grounded. Alternatively, in another example, as shown in FIG3B (b), the first end of the resistor element R is connected to the positive electrode of the power supply V, and the second end of the resistor element R is connected to the drain a2 of the NMOS transistor and the first end d1 of the capacitor C. Alternatively, the first end of the resistor element R is connected to the negative electrode of the power supply V, and the second end of the resistor element R is connected to the cathode b2 of the laser LR and the second end d2 of the capacitor C, and then is grounded. The working process of this circuit connection structure refers to the circuit connection structure shown in (a) or (b) in Figure 3A above, with the difference being that: in the first period of a cycle, part of the electric energy output by the power supply V is consumed by the resistor element R, and the other part is provided to the capacitor C, that is, after charging is completed, the electric energy stored in the capacitor C is less than that in the structure shown in (a) or (b) in Figure 3A; in the second period of the cycle, the capacitor C, the resistor R and the laser LR form a loop, so the current in the loop is lower than that in the loop formed by only the capacitor C and the laser LR as shown in (a) or (b) in Figure 3A, so the intensity of the detection laser emitted by the laser LR is weaker than that in the structure shown in (a) or (b) in Figure 3A. In addition, if you want to flexibly adjust the intensity of the detection laser, the resistance element R can also be set as a variable resistor. When a weaker detection laser is required, the resistance value of the variable resistor is set to be larger. When a stronger detection laser is required, the resistance value of the variable resistor is set to be smaller.

[0053] Furthermore, in combination with Figure 2, Figure 4 shows a schematic diagram of a layout of components in a transmitting module, wherein Figure 4 (a) shows a main view of the layout of components in the transmitting module, and Figure 4 (b) shows a top view of the layout of components in the transmitting module. As shown in Figure 4 (a) and Figure 4 (b), a PCB single board is provided in this layout, and the driver chip, switching device, laser, energy storage element and power supply in the transmitting module 120 are individually packaged into packages, and then planarly laid out on the PCB single board, and each package is connected through the wiring on the PCB. In the case of a local circuit structure, the number of packages and wiring contained in the circuit structure will introduce parasitics (such as parasitic resistance and parasitic inductance) into the circuit structure, and the introduced parasitics will be connected in series on the link where the laser is located. Assuming that the parasitic resistance is R, the parasitic inductance is L, and the output power of the power supply is P out , the photoelectric conversion efficiency is η. From the working principle of the emission module introduced above, it can be seen that the transient current i is formed by the discharge of the energy storage element after the switch device is turned on. As the parasitic inductance L and parasitic resistance R in series on the link where the laser is located decrease, the transient current i will increase accordingly, thereby increasing the laser's emitted optical power P. That is, the laser's emitted optical power P is approximately proportional to the transient current i, and the transient current i is approximately proportional to 1 / LR. Therefore, the laser's emitted optical power P can be understood as being approximately proportional to 1 / LR. In this way, at the same power supply output power P out Under this condition, the electro-optical conversion efficiency η can be defined as the ratio of the laser's emitted light power P to the power supply output power P. out The ratio of P to L / LR is η = P / Pout. Since P is approximately proportional to 1 / LR, the electro-optical conversion efficiency η is also approximately proportional to 1 / LR. In summary, reducing the parasitic inductance L and parasitic resistance R can improve the electro-optical conversion efficiency η in the transmitting module.

[0054] However, the more packages included in the circuit structure and the longer the trace length, the greater the parasitic inductance and parasitic resistance parameters introduced into the circuit structure. In the above layout, individually encapsulating each component will result in a large number of packages in the transmitting module, and the planar layout between the individual packages will make the traces on the PCB more convoluted. The large number of packages and the convoluted traces will introduce greater parasitic inductance and parasitic resistance into the transmitting module, thereby reducing the optical power of the detection laser emitted by the laser. It can be seen that the above layout reduces the efficiency of the transmitting module in converting electrical energy into light energy, which is not conducive to improving the electro-optical conversion efficiency of the transmitting module.

[0055] Based on this, an embodiment of the present application provides an integrated device for reducing parasitics introduced into the structure of the integrated device to improve the effective energy conversion efficiency of the integrated device. For example, when the integrated device is an integration of a laser and a capacitor in an emission module, the electro-optical conversion efficiency of the emission module is improved by reducing the parasitics introduced by the emission module.

[0056] The specific implementation of the integrated device provided in the embodiments of the present application is described below through specific examples.

[0057] FIG5 is a schematic diagram of the structure of an integrated device provided in an embodiment of the present application, comprising: a laser LR and a capacitor C. The laser LR comprises an anode, a cathode, and a first substrate; the capacitor C comprises a second substrate, an insulating layer, and a comb-shaped first metal layer, the insulating layer being bonded to the first metal layer; the first substrate and the second substrate are in contact, and the anode of the laser LD is embedded in the first substrate and connected to the second substrate.

[0058] Optionally, the laser LR may be a laser diode. Optionally, the laser LR may be a laser capable of emitting lasers of different wavelengths, for example, the wavelength may be 905 nanometers (nm).

[0059] The first substrate and the second substrate being in contact with each other may mean that there is no other medium or device between the first substrate and the second substrate, but they are in direct contact. In one example, the first substrate and the second substrate are stacked and in contact with each other.

[0060] The insulating layer may be in the shape of a Chinese character "bow". Alternatively, the insulating layer may be formed by etching a plurality of grooves on a side of the second substrate away from the first substrate and then depositing an insulating material on the side surface of the second substrate having the plurality of grooves.

[0061] The anode of the laser LD is embedded in the first substrate and connected to the second substrate, which may mean that the anode extends into the first substrate and penetrates the first substrate and is connected to the second substrate. Alternatively, the anode may extend into the second substrate to be connected to the second substrate.

[0062] In the integrated device provided by the embodiment of the present application, by stacking and contacting the first substrate in the laser LR and the second substrate of the capacitor C, the distance between the laser LR and the capacitor C can be reduced by a three-dimensional layout, and at the same time, the anode of the laser LD is embedded in the first substrate and connected to the second substrate to realize the interconnection between the laser LD and the capacitor C, so that there is no need to set an additional interconnection line between the laser LD and the capacitor, thereby greatly reducing the parasitic (such as parasitic inductance and parasitic resistance) introduced in the integrated device structure, and then improving the effective energy conversion efficiency of the integrated device. The above-mentioned integrated device can reduce the interconnection length between the laser LD and the capacitor C from hundreds of microns (um) level to um level. In addition, the above-mentioned first metal layer in the shape of comb teeth can also increase the specific surface area of ​​the capacitor C, thereby facilitating heat dissipation and reducing heat loss.

[0063] Optionally, the first substrate and the second substrate are integrally formed. Here, the first substrate and the second substrate are integrally formed to each other, which may mean that the first substrate and the second substrate are two parts of the same substrate formed in one process, for example, they may be the upper and lower parts of the same substrate. In one possible example, the first substrate and the second substrate may be the upper and lower parts of the same wafer. The above-mentioned integral formation of the first substrate and the second substrate can save a wafer, and can also save the process materials and process costs required for bonding two wafers (for example, bonding by post-process grinding and bonding).

[0064] Optionally, the material of the first substrate and the material of the second substrate are the same or different. In one possible embodiment, the materials of the first substrate and the second substrate are the same. For example, the materials of the first substrate and the second substrate may both be aluminum gallium arsenide AlGaAs and / or gallium arsenide GaAs. In another possible embodiment, the materials of the first substrate and the second substrate are different. For example, the material of the first substrate may be AlGaAs and the material of the second substrate may be GaAs; or, the material of the first substrate may be GaAs and the material of the second substrate may be AlGaAs. In practical applications, the material of the first substrate and the material of the second substrate may also be other materials. The above description only takes the material being AlGaAs and / or GaAs as an example and does not limit the embodiments of the present application.

[0065] Because the lattice constant of AlGaAs is different from that of the GaAs layer, and the lattice constant of AlGaAs is smaller than that of the GaAs layer, AlGaAs and GaAs are subjected to compressive strain in the xy direction (i.e., two directions parallel to the substrate and perpendicular to each other) and tensile strain in the z direction (i.e., a direction perpendicular to the substrate). This results in greater electron mobility in AlGaAs and GaAs, and a correspondingly lower resistivity, thereby significantly reducing the parasitic resistance of the integrated device and improving its performance. Furthermore, due to its excellent electrical conductivity, the use of AlGaAs can further reduce the resistance of the AlGaAs itself, further improving the performance of the integrated device.

[0066] Optionally, the cathode of the laser LD is located on a side of the first substrate away from the second substrate. In one example, the first substrate is located above the second substrate, and the cathode is disposed on the upper surface of the first substrate. In addition, in one example, the cathode may include a plurality of sub-electrodes, and the plurality of sub-electrodes may be dispersedly distributed on a side of the first substrate away from the second substrate.

[0067] The comb-shaped first metal layer may include a plurality of comb teeth. In a possible embodiment, the distance between any two adjacent comb teeth may be the same or different. FIG5 illustrates the case where the distance between any two adjacent comb teeth is the same.

[0068] Optionally, at least two comb teeth of the same or different heights may exist in the first metal layer. The height of each comb tooth here may refer to the height of the comb tooth extending into the interior of the second substrate. In one example, as shown in FIG5 , the heights of all the comb teeth of the first metal layer are the same. Alternatively, in another example, as shown in FIG6 , among all the comb teeth of the first metal layer, the heights of some comb teeth are different from the heights of other comb teeth. When there are comb teeth of different heights in the first metal layer, the arrangement of the comb teeth of different heights may be random or may be arranged in a certain order (for example, from low to high, from high to low, or high-low-high-low), and the embodiments of the present application do not impose specific restrictions on this.

[0069] Optionally, the maximum height of the comb teeth in the first metal layer is less than the thickness of the second substrate. In other words, the comb teeth of the first metal layer do not penetrate the side of the second substrate close to the first substrate.

[0070] In an embodiment of the present application, as shown in (a) and (b) of FIG7 , the capacitor C may be a capacitor of a metal-insulator-semiconductor (MIS) structure, or a capacitor of a metal-insulator-metal (MIM) structure. When the capacitor C is a MIS structure, it may include a second substrate, an insulating layer, and a first metal layer; in this case, the second substrate may be a heavily doped substrate, such as a heavily doped AlGaAs or a heavily doped gallium arsenide GaAs, which may also be referred to as a low-resistivity substrate. When the capacitor C is a MIM structure, in addition to the second substrate, the insulating layer, and the first metal layer, it may also include another metal layer; in this case, the second substrate may be a lightly doped or undoped substrate, which may also be referred to as a high-resistivity substrate.

[0071] When the second substrate is a high-resistivity substrate, in a possible embodiment, as shown in FIG8 , the capacitor C further includes a second metal layer, and the second metal layer is located between the second substrate and the insulating layer; in this case, the anode of the laser LR can be embedded in the first substrate and the second substrate and connected to the second metal layer. The shape of the second metal layer can also be a “bow” shape. Optionally, the second metal layer can be formed before the insulating layer. For example, after a plurality of grooves are etched on the side of the second substrate away from the first substrate, a second metal layer in the shape of a “bow” can be formed by depositing a metal material on the side surface of the second substrate having the plurality of grooves, and then an insulating layer can be formed on the second metal layer by depositing an insulating material.

[0072] In the integrated device provided in the embodiment of the present application, the capacitor C of the MIS structure can be realized by the high-resistivity second substrate, the insulating layer and the first metal layer, and the capacitor C of the MIM structure can be realized by the low-resistivity second substrate, the second metal layer, the insulating layer and the first metal layer, thereby improving the flexibility and diversity of the capacitor C in the integrated device in a specific implementation.

[0073] Based on this, an embodiment of the present application further provides an integrated circuit, as shown in FIG9 , comprising: the integrated device provided above and a switching device, the switching device comprising a first electrode and a second electrode located on the same side; wherein the integrated device is disposed on the switching device, the cathode of the laser in the integrated device is connected to the first electrode via a wire, and the first metal layer of the capacitor in the integrated device is in contact with the second electrode. Optionally, the wire may be a bonding wire.

[0074] An embodiment of the present application also provides an emission module, which may include a power supply, a driver chip and the integrated circuit provided above; wherein the power supply is used to supply power to the integrated device, the driver chip is used to send a drive signal to the integrated circuit, and the integrated circuit is used to send a detection laser according to the drive signal.

[0075] An embodiment of the present application also provides a detection device, which may include a control circuit and the emission module provided above, the control circuit is used to send a control signal to the emission module, and the emission module is used to emit a detection laser according to the control signal.

[0076] In a possible embodiment, the detection device may further include a receiving module, which is used to receive the echo signal returned after the detection laser scans the target object and convert the echo signal into an electrical signal. The control circuit is also used to process the electrical signal to obtain point cloud data.

[0077] In another possible embodiment, the detection device may further include a scanning module, which is used to use the detection laser to traverse and scan the target object.

[0078] Optionally, the detection device may be a laser radar or other device capable of emitting a detection laser. Examples of detection devices include, but are not limited to, vehicle-mounted laser radars, household robot vacuum laser sensors, dock laser detection modules, laser printers, and the like.

[0079] The present application also provides a terminal including the detection device described above. Optionally, the terminal includes, but is not limited to: smart home devices (such as televisions, robot vacuums, smart desk lamps, audio systems, smart lighting systems, appliance control systems, home background music, home theater systems, intercom systems, video surveillance, etc.), smart transportation equipment (such as cars, ships, drones, trains, vans, trucks and other vehicles), smart manufacturing equipment (such as robots, industrial equipment, smart logistics, smart factories, etc.), smart terminals (mobile phones, computers, tablets, PDAs, desktops, headphones, audio equipment, wearable devices, vehicle-mounted devices, virtual reality devices, augmented reality devices, etc.).

[0080] Figure 10 is a schematic flow chart of a method for manufacturing an integrated device provided in an embodiment of the present application. The integrated device may be the integrated device provided above. The method includes the following steps. Figure 11 is a cross-sectional view of the integrated device during the manufacturing process.

[0081] S301: forming a first substrate and a second substrate, wherein the first substrate and the second substrate are in contact with each other, as shown in FIG11(a).

[0082] The first substrate and the second substrate being in contact may mean that the first substrate and the second substrate are in direct contact without any other medium or device between them. In one example, the first substrate and the second substrate are stacked and in contact with each other to form the first substrate, which may specifically include: forming the second substrate, and forming the first substrate on the second substrate.

[0083] Optionally, the first substrate and the second substrate are integrally formed. In one possible example, the first substrate and the second substrate may be upper and lower portions of a same wafer, so forming the first substrate may specifically include: forming a wafer including the first substrate and the second substrate located in upper and lower portions.

[0084] Optionally, the material of the first substrate and the material of the second substrate are the same or different. In one possible embodiment, the materials of the first substrate and the second substrate are the same. For example, the materials of the first substrate and the second substrate may both be aluminum gallium arsenide (AlGaAs) and / or gallium arsenide (GaAs). In another possible embodiment, the materials of the first substrate and the second substrate are different. For example, the material of the first substrate may be AlGaAs and the material of the second substrate may be GaAs; alternatively, the material of the first substrate may be GaAs and the material of the second substrate may be AlGaAs.

[0085] S302: forming a cathode and an anode embedded in the first substrate on the first substrate, wherein the anode is embedded in the first substrate and connected to the second substrate, as shown in FIG11(b).

[0086] The cathode may be located on a side of the first substrate away from the second substrate. In one example, the first substrate is located above the second substrate, and the cathode is disposed on an upper surface of the first substrate.

[0087] In addition, the anode is embedded in the first substrate and connected to the second substrate, which may mean that the anode extends into the first substrate and penetrates the first substrate to connect to the second substrate. Alternatively, the anode may extend into the second substrate to connect to the second substrate.

[0088] Accordingly, forming a cathode on the first substrate and an anode embedded in the first substrate may specifically include: forming a cathode on a side of the first substrate away from the second substrate, and forming an anode embedded in the first substrate and connected to the second substrate. Forming the anode embedded in the first substrate and connected to the second substrate may specifically include: forming a through-hole in the first substrate and the second substrate using a process such as photolithography or etching, wherein the through-hole is embedded in and penetrates the first substrate, and filling the through-hole with a metal material using a process such as deposition to form the anode embedded in the first substrate and connected to the second substrate.

[0089] S303: Form a plurality of grooves on a side of the second substrate away from the first substrate. Optionally, the depth of the grooves is less than the thickness of the second substrate, as shown in FIG11(c).

[0090] The distance between any two adjacent grooves in the plurality of grooves may be the same or different. Furthermore, at least two grooves in the plurality of grooves may have the same or different depths. For example, the depths of the plurality of grooves may all be the same, or the depths of some grooves in the plurality of grooves may be different from the depths of the others. FIG. 11 illustrates the example of the case where the distance between any two adjacent grooves is the same, and the depths of the plurality of grooves are the same.

[0091] In a possible embodiment, the plurality of grooves are formed on a side of the second substrate away from the first substrate by photolithography or etching.

[0092] S304: forming an insulating layer on the surface of the second substrate having the plurality of grooves, and forming a first metal layer in a comb-tooth shape on the insulating layer, as shown in (d) and (e) of FIG11 .

[0093] In one possible embodiment, a "bow"-shaped insulating layer is formed on the surface of the second substrate having the multiple grooves by a process such as depositing or depositing an insulating material, wherein the thickness of the insulating layer is less than half of the radial width of the grooves; thereafter, a first metal layer in a comb-shaped shape can be formed on the insulating layer by a process such as depositing or depositing a metal material, wherein the sum of the thickness of the insulating layer and the thickness of the first metal layer can be equal to half of the radial width of the grooves.

[0094] The above-mentioned capacitor C can be a capacitor of MIS structure or a capacitor of MIM structure. When the capacitor C is a MIS structure, it can include a second substrate, an insulating layer and a first metal layer; in this case, the second substrate can be a heavily doped substrate, which can also be called a low-resistivity substrate. When the capacitor C is a MIM structure, in addition to the second substrate, the insulating layer and the first metal layer, it can also include another metal layer; in this case, the second substrate can be a lightly doped or undoped substrate, which can also be called a high-resistivity substrate.

[0095] Furthermore, the second substrate is a high-resistivity substrate, and the capacitor further includes a second metal layer. The second metal layer is located between the second substrate and the insulating layer, and the anode is embedded in the second substrate and connected to the second metal layer. In this case, as shown in FIG12 , the above-mentioned S304 may specifically include the following steps: S3041-S3042.

[0096] S3041: forming a second metal layer on the surface of the second substrate having the plurality of grooves, as shown in FIG11(f).

[0097] In a possible embodiment, a second metal layer in a bow shape is formed on the surface of the second substrate having the plurality of grooves by depositing or depositing metal materials, wherein the thickness of the second metal layer is less than half of the radial width of the grooves.

[0098] S3042: forming an insulating layer on the second metal layer, and forming a comb-shaped first metal layer on the insulating layer, as shown in (g) and (h) of FIG11 .

[0099] In one possible embodiment, a "bow"-shaped insulating layer is formed on the second metal layer by a process such as depositing or depositing insulating materials, wherein the sum of the thickness of the insulating layer and the thickness of the second metal layer is less than half of the radial width of the groove; thereafter, a comb-shaped first metal layer can be formed on the insulating layer by a process such as depositing or depositing metal materials, wherein the sum of the thickness of the second metal layer, the thickness of the insulating layer and the thickness of the first metal layer is equal to half of the radial width of the groove.

[0100] In the manufacturing method of the integrated device provided in the embodiment of the present application, by stacking and contacting the first substrate in the laser and the second substrate of the capacitor, the distance between the laser and the capacitor can be reduced by a three-dimensional layout, and the anode of the laser is embedded in the first substrate and the second substrate is connected to achieve the interconnection between the laser and the capacitor, thereby eliminating the need to set additional interconnection wiring between the laser and the capacitor, thereby greatly reducing the parasitic (such as parasitic inductance and parasitic resistance) introduced in the integrated device structure, and then improving the effective energy conversion efficiency of the integrated device. The integrated device obtained by the above-mentioned manufacturing method can reduce the interconnection length between the laser and the capacitor from 100 microns (um) level to um level. In addition, the above-mentioned first metal layer in the shape of comb teeth can also increase the specific surface area of ​​the capacitor, thereby facilitating heat dissipation and reducing heat loss.

[0101] According to the manufacturing method provided in the embodiment of the present application, the embodiment of the present application also provides a computer-readable storage medium, which stores a computer program. When the computer program is run, the manufacturing method introduced in the above content is executed.

[0102] According to the manufacturing method provided in the embodiment of the present application, the embodiment of the present application also provides a computer program product, which implements the manufacturing method introduced in the above content when the computer program product runs on a processor.

[0103] Finally, it should be noted that the above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any changes or substitutions within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. An integrated device, characterized in that: The integrated device comprises: A laser comprising: an anode, a cathode and a first substrate; A capacitor comprising: a second substrate, an insulating layer, and a first metal layer in a comb-shaped shape, wherein the insulating layer is arranged in contact with the first metal layer; The first substrate and the second substrate are in contact with each other, and the anode is embedded in the first substrate and connected to the second substrate.

2. The integrated device according to claim 1, characterized in that The first substrate and the second substrate are integrally formed.

3. The integrated device according to claim 1 or 2, characterized in that The material of the first substrate and the material of the second substrate are the same or different.

4. The integrated device according to any one of claims 1 to 3, characterized in that: The cathode is located on a side of the first substrate away from the second substrate.

5. The integrated device according to any one of claims 1 to 4, characterized in that: The second substrate is a high-resistivity substrate. The capacitor further includes a second metal layer located between the second substrate and the insulating layer. The anode is embedded in the second substrate and connected to the second metal layer.

6. The integrated device according to any one of claims 1 to 5, characterized in that: There are at least two comb teeth in the first metal layer with the same or different heights.

7. The integrated device according to claim 6, characterized in that The maximum height of the comb teeth in the first metal layer is less than the thickness of the second substrate.

8. A method for manufacturing an integrated device, characterized in that: The integrated device includes a laser and a capacitor, the laser includes an anode, a cathode, and a first substrate, the capacitor includes a second substrate, an insulating layer, and a first metal layer in a comb-shaped shape, and the method includes: forming the first substrate and the second substrate, wherein the first substrate and the second substrate are in contact with each other; forming the cathode and the anode embedded in the first substrate on the first substrate, wherein the anode is embedded in the first substrate and connected to the second substrate; forming a plurality of grooves on a side of the second substrate away from the first substrate; The insulating layer is formed on the surface of the second substrate having the plurality of grooves, and the first metal layer in a comb-shaped shape is formed on the insulating layer. The thickness of the insulating layer is less than half of the radial width of the grooves.

9. The production method according to claim 8, characterized in that: The first substrate and the second substrate are integrally formed.

10. The production method according to claim 8 or 9, characterized in that: The material of the first substrate and the material of the second substrate are the same or different.

11. The production method according to any one of claims 8 to 10, characterized in that: The cathode is located on a side of the first substrate away from the second substrate, and the forming of the cathode on the first substrate and the anode embedded in the first substrate includes: The cathode is formed on a side of the first substrate away from the second substrate, and an anode is formed which is embedded in the first substrate and connected to the second substrate.

12. The production method according to any one of claims 8 to 11, characterized in that: The second substrate is a high-resistivity substrate, the capacitor further includes: a second metal layer, the second metal layer is located between the second substrate and the insulating layer, the anode is embedded in the second substrate and connected to the second metal layer; the insulating layer is formed on the surface of the second substrate having the plurality of grooves, including: forming the second metal layer on the surface of the second substrate having the plurality of grooves; The insulating layer is formed on the second metal layer, and the sum of the thickness of the second metal layer and the thickness of the insulating layer is less than half of the radial width of the groove.

13. The production method according to any one of claims 8 to 12, characterized in that: There are at least two comb teeth in the first metal layer with the same or different heights.

14. The production method according to any one of claims 8 to 13, characterized in that: The height of the comb teeth in the first metal layer is less than the thickness of the second substrate.

15. An integrated circuit, characterized in that: The integrated circuit comprises: The integrated device according to any one of claims 1 to 7; A switching device comprising a first electrode and a second electrode located on the same side; The integrated device is provided on the switching device, the cathode of the laser in the integrated device is connected to the first electrode via a wire, and the first metal layer of the capacitor in the integrated device is in contact with and connected to the second electrode.

16. A detection device, characterized in that: The detection device comprises: the integrated device according to any one of claims 1 to 7, or the integrated circuit according to claim 15.

17. A terminal, characterized in that: The terminal includes: the integrated device according to any one of claims 1 to 7, or the integrated circuit according to claim 15. The terminal according to claim 17 , wherein: The terminal is a vehicle.

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