Dynamic control method, system and equipment for multi-parameter crystal furnace and medium

Abstract

The invention provides a dynamic control method, system and equipment for a multi-parameter crystal furnace and a medium, and relates to the technical field of crystal growth, the control method comprises the following steps: obtaining first real-time temperatures of a plurality of first monitoring point positions in each heating zone to obtain a target heating zone; if the crucible is not in the target heating area, calculating a target moving distance, and calculating a target rotation angle of each nozzle according to the direction and distance of the mounting area relative to the target heating area; and the crucible is driven to move by the target movement distance in the axial direction of the furnace body, and after the crucible reaches the target heating area, all the spray heads are controlled to rotate by the target rotation angle, so that the inflation direction of the inflation inlet faces the target heating area. According to the scheme, the area with the most uniform temperature in the furnace body is actively found, the crucible is placed in the found area, and then the area with the most uniform temperature is filled with the reducing gas, so that the reducing atmosphere environment of the area with the most uniform temperature is relatively uniform, the performance and the growth rate of crystals in all directions are consistent, and the quality and the performance of the crystals are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of crystal growth, and in particular to a multi-parameter crystal furnace dynamic control method, system, equipment and medium. Background Art

[0002] The growth and preparation of crystals play a vital role in the field of modern science and technology and are widely used in the semiconductor, optics, electronics and other industries. In the process of crystal growth, the crystal furnace is a key equipment. The uniformity of the heating temperature inside it is closely related to the quality of the grown crystals, and the heating temperature inside the furnace is related to the layout of the heating components inside the furnace, the heating performance, and the heat dissipation and heat absorption properties of the furnace wall.

[0003] In the prior art, heating components are often arranged on the top or bottom of the furnace or on the periphery of the crucible to provide heat for crystal growth. However, the heat transfer process in the furnace is relatively complicated. Thermal radiation, thermal convection and heat exchange with the surrounding environment will affect the temperature of each layer of the furnace along its height direction, which will cause the heating temperature of the area where the crucible is located to be uneven. If crystals are grown in an environment with uneven heating temperature, the performance and growth rate of the crystals in all directions may be inconsistent, and stress and defects will be generated inside the crystals, seriously affecting the quality and performance of the crystals. Summary of the invention

[0004] In view of the above-mentioned defects or deficiencies in the prior art, the present invention aims to provide a multi-parameter crystal furnace dynamic control method, system, equipment and medium to ensure that the crystal grows in an environment with a relatively uniform heating temperature.

[0005] In a first aspect, the present invention provides a multi-parameter crystal furnace dynamic control method for dynamically controlling the operation of the multi-parameter crystal furnace, the multi-parameter crystal furnace at least comprising: A furnace body, wherein the furnace body has a reaction chamber, wherein a crucible is arranged in the reaction chamber, wherein the furnace body has a mounting area along its axial direction, and wherein the reaction chamber includes a plurality of heating areas along the axial direction of the furnace body; A charging assembly, the charging assembly comprising a gas source installed outside the reaction chamber for providing reducing gas and a plurality of charging ports evenly distributed on the installation area, each of the charging ports being installed with a nozzle, the nozzle being used to change the charging direction of the corresponding charging port to charge the reducing gas into the reaction chamber; A heating component, the heating component is disposed in the reaction chamber, and the heating component is used to provide heat to the reaction chamber; A driving assembly, the driving assembly is arranged in the reaction chamber and at the bottom of the furnace body, and the driving assembly is used to drive the crucible to move along the axial direction of the furnace body and / or to rotate along the axis of the furnace body; The control method comprises the following steps: Acquire the first real-time temperatures of a plurality of first monitoring points in each heating zone to obtain a target heating zone; the target heating zone is the heating zone with the most uniform heating temperature; If the crucible is not in the target heating zone, a target moving distance is calculated, where the target moving distance is the distance between the current position of the crucible and the target heating zone; Calculating a target rotation angle of each of the nozzles according to the direction and distance of the installation area relative to the target heating area; The driving assembly is controlled to drive the crucible to move the target moving distance along the axial direction of the furnace body. After the crucible reaches the target heating zone, each nozzle is controlled to rotate the target rotation angle so that the inflation direction of the inflation port is toward the target heating zone.

[0006] According to the technical solution provided by the present invention, the step of obtaining the first real-time temperatures of a plurality of first monitoring points in each heating zone to obtain the target heating zone specifically includes the following steps: When the heating power of the heating component reaches the target heating power corresponding to the target temperature, start timing, and after a first preset time, obtain the first real-time temperature of a plurality of first monitoring points in each of the heating zones; According to the first real-time temperatures of a plurality of first monitoring points in each of the heating zones, at least one first heating zone is obtained, the first heating zone being the heating zone in which the absolute value of the difference between the first real-time temperatures of any two of the first monitoring points is less than a first preset threshold; The first real-time temperature average value of each of the first heating zones is calculated, and the first heating zone corresponding to the first real-time temperature average value having the smallest deviation from the target temperature is taken as the target heating zone.

[0007] According to the technical solution provided by the present invention, the multi-parameter crystal furnace further comprises a lifting assembly arranged in the reaction chamber away from the driving assembly side, the lifting assembly comprises a lifting motor and a lifting rod connected to the output shaft of the lifting motor, the lifting rod extends along the axial direction of the furnace body, and a seed crystal is arranged at the end of the lifting rod close to the crucible; After obtaining the target heating area, the following steps are also included: Obtaining a target growth height of the crystal to be grown, a melt depth of the melt in the crucible, and a highest position at which the lifting rod can lift the seed crystal to move axially along the furnace body; According to the melt depth and the highest position, a preset growth height of the crystal to be grown is obtained; If the crucible is not in the target heating zone, the target moving distance is calculated, which specifically includes the following steps: When it is determined that the preset growth height is greater than or equal to the target growth height, if the crucible is not in the target heating zone, a target moving distance is calculated.

[0008] According to the technical solution provided by the present invention, the radial center axis of the nozzle along the furnace body is used as the first rotation axis; the target rotation angle of each nozzle is calculated according to the direction and distance of the installation area relative to the target heating area, which at least includes the following steps: Along the axial direction of the furnace body, if the height of the target heating zone is higher than the height of the installation zone, the direction of the installation zone relative to the target heating zone is marked as a low direction; If the height of the target heating area is lower than the height of the installation area, the direction of the installation area relative to the target heating area is marked as the high-position direction; If the height of the target heating area is equal to the height of the installation area, the direction of the installation area relative to the target heating area is marked as the equal position direction; When the direction of the installation area relative to the target heating area is the high-position direction, the nozzle is rotated along the first rotation axis to point to the center of the target heating area, and the required rotation angle is used as the target rotation angle.

[0009] According to the technical solution provided by the present invention, the target rotation angle of each nozzle is calculated according to the direction and distance of the installation area relative to the target heating area, and further includes the following steps: When the direction of the installation area relative to the target heating area is the low direction, all the nozzles are grouped to obtain a plurality of nozzle groups, each of which includes at least a first nozzle, a second nozzle and a third nozzle; Dividing the target heating zone into at least a first simulation partition, a second simulation partition and a third simulation partition along the axial direction of the furnace body; The first nozzle is rotated along the first rotation axis to point to the center of the area of ​​the first simulation partition as a first target rotation angle; Rotate the second nozzle along the first rotation axis to point to the center of the second simulation partition to obtain a second target rotation angle; The third nozzle is rotated along the first rotation axis to point to the center of the third simulation partition, and the required rotation angle is used as the third target rotation angle.

[0010] According to the technical solution provided by the present invention, the central axis of the nozzle along the axial direction of the furnace body is used as the second rotation axis; the target rotation angle of each nozzle is calculated according to the direction and distance of the installation area relative to the target heating area, and the following steps are also included: When the direction of the installation area relative to the target heating area is the equiposition direction, the nozzle is rotated along the second rotation axis to point to the angle required for the next nozzle adjacent to the nozzle as the target rotation angle.

[0011] According to the technical solution provided by the present invention, after obtaining the preset growth height of the crystal to be grown according to the melt depth and the highest position, the following steps are also included: When it is determined that the preset growth height is less than the target growth height, a second heating zone is obtained according to the target growth height, and then a candidate zone set is obtained, wherein the candidate zone set includes the second heating zone and all the heating zones below the second heating zone; the distance between the second heating zone and the highest position is equal to the target growth height; Screening a secondary target heating area in the candidate area set, wherein the secondary target heating area is the heating area with the most uniform heating temperature in the candidate area set; After controlling the driving component to drive the crucible to move to the secondary target heating zone, start timing, and collect second real-time temperatures of a plurality of second monitoring points on the crucible in real time after a second preset time period to obtain an actual temperature of the crucible; If the absolute value of the difference between the actual temperature and the target temperature is greater than a second preset threshold, updating the target heating power according to the absolute value of the difference between the actual temperature and the target temperature to obtain an updated target heating power; The heating assembly is controlled to operate at the updated target heating power so that the actual temperature of the crucible in the secondary target heating zone reaches the target temperature.

[0012] In a second aspect, the present invention provides a control system for a multi-parameter crystal furnace dynamics, which is used to implement the multi-parameter crystal furnace dynamics control method as described above, comprising: A collection module, the collection module is configured to obtain the first real-time temperature of a plurality of first monitoring points in each heating zone to obtain a target heating zone; the target heating zone is the heating zone with the most uniform heating temperature; a calculation module, the calculation module being configured to calculate a target moving distance if the crucible is not in the target heating zone, the target moving distance being the distance between the current position of the crucible and the target heating zone; The calculation module is further configured to calculate a target rotation angle of each nozzle according to a direction and a distance of the installation area relative to the target heating area; A control module is configured to control a driving assembly to drive the crucible to move the target moving distance along the axial direction of the furnace body, and after the crucible reaches the target heating zone, control each of the nozzles to rotate the target rotation angle so that the inflation direction of the inflation port is toward the target heating zone.

[0013] In a third aspect, the present invention provides a terminal device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of the above-mentioned multi-parameter crystal furnace dynamic control method when executing the computer program.

[0014] In a fourth aspect, the present invention provides a computer-readable storage medium having a computer program, and when the computer program is executed by a processor, the steps of the above-mentioned multi-parameter crystal furnace dynamic control method are implemented.

[0015] Compared with the prior art, the beneficial effects of the present invention are as follows: the present invention first improves the traditional crystal furnace so that the crucible with a fixed height can be moved along the axial direction of the furnace body, and the filling port can also change the filling direction of the reducing gas. In this way, the target heating zone with the most uniform heating temperature is first found according to the real-time temperature of each layer of the heating zone, and the crucible is moved to the target heating zone. By actively finding the area with the most uniform temperature in the furnace body and placing the crucible in the found area, it is more flexible, more convenient and more effective than measures such as optimizing the distribution of heating components and improving the insulation structure of the furnace body. It makes full use of the resources of the area with the most uniform temperature in the existing furnace. In addition, filling the reducing gas into the area with the most uniform temperature also makes the reducing atmosphere environment in the area with the most uniform temperature relatively uniform to a certain extent, thereby ensuring that the performance and growth rate of the crystal in all directions are consistent, thereby improving the quality and performance of the crystal. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A flow chart of the steps of the automatic control method of the CZ-type crystal growth furnace provided by the present invention; Figure 2 A schematic diagram of the structure of the automatic control system of the CZ-type crystal growth furnace provided by the present invention; Figure 3 A schematic diagram of the structure of the terminal device provided by the present invention.

[0017] The text labels shown in the figure represent: 700. Computer system; 701. CPU; 702. ROM; 703. RAM; 704. Bus; 705. I / O interface; 706. Input part; 707. Output part; 708. Storage part; 709. Communication part; 710. Drive; 711. Removable media. DETAILED DESCRIPTION

[0018] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the relevant invention, rather than to limit the invention. It should also be noted that, for ease of description, only the parts related to the invention are shown in the accompanying drawings.

[0019] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0020] Example 1 As mentioned in the background technology, in view of the problems in the prior art, the present invention proposes a multi-parameter crystal furnace dynamic control method for dynamically controlling the operation of the multi-parameter crystal furnace, the multi-parameter crystal furnace at least comprising: A furnace body, wherein the furnace body has a reaction chamber, wherein a crucible is arranged in the reaction chamber, wherein the furnace body has a mounting area along its axial direction, and wherein the reaction chamber includes a plurality of heating areas along the axial direction of the furnace body; Specifically, the crucible is used to contain the melt required for growing crystals. In the prior art, a turntable is provided at the bottom of the reaction chamber, and a fixing element for fixing the crucible is provided on the turntable so that the crucible is fixed on the turntable. The turntable can drive the crucible and the melt inside to rotate, so that the solute in the melt is fully mixed and the composition is uniform.

[0021] Optionally, the height of the installation area and the height of the heating zone are the same as the height of the crucible. A furnace body is often provided with an installation area. When the furnace body is a cylinder, the installation area is an annular area at a certain height on the cylinder (outer wall of the furnace body), and the heating zone is a part of the cylinder. All heating zones constitute the reaction chamber. Exemplarily, a furnace body has five heating zones.

[0022] A charging assembly, the charging assembly comprising a gas source installed outside the reaction chamber for providing reducing gas and a plurality of charging ports evenly distributed on the installation area, each of the charging ports being installed with a nozzle, the nozzle being used to change the charging direction of the corresponding charging port to charge the reducing gas into the reaction chamber; Specifically, a plurality of inflation ports are provided on the installation area of ​​the outer wall of the furnace body, which are arranged in a circle. The inflation ports can be the air outlets of the inflation pipes. The inflation pipes are fixed to the inner wall of the furnace body by certain fixing devices to ensure that the air outlets are placed in the installation area. The distance between every two adjacent inflation ports is equal.

[0023] Optionally, the nozzle is a universal joint nozzle made of high-strength alloy, which can withstand high temperature and high-pressure gas and can achieve 360-degree all-round jetting into the reaction chamber.

[0024] A heating component, the heating component is disposed in the reaction chamber, and the heating component is used to provide heat to the reaction chamber; Specifically, the heating component can be selected from electric heating rods, electric heating wires, electric heating plates and other elements, and can be set in any area of ​​the furnace top, furnace bottom or the middle of the furnace body. However, since the thickness of the furnace wall, the degree of thermal conductivity and the insulation effect are different at any position, if multiple heating components are set, then the distribution uniformity of the heating components and the power density of each heating component will affect the temperature distribution in each layer. Therefore, the area where the heating component is located is not necessarily an area with uniform temperature, and the area where the crucible is located in the initial state (at the bottom of the reaction chamber) is not necessarily an area with uniform temperature. For example, in some cases, the area close to the furnace top or furnace bottom may have a lower temperature than the middle layer where the heating component is set due to large heat loss. If the thermal insulation performance of the furnace body is good and the heating component is precisely controlled, the layer of space where the heating component is set may be closer to the target temperature.

[0025] A driving assembly, the driving assembly is arranged in the reaction chamber and at the bottom of the furnace body, and the driving assembly is used to drive the crucible to move along the axial direction of the furnace body and / or to rotate along the axis of the furnace body; Specifically, the driving assembly includes a lifting element and a turntable arranged on the lifting element, and the turntable is used to set the crucible.

[0026] Please refer to Figure 1 As shown, the control method includes the following steps: S1. Obtaining the first real-time temperatures of a plurality of first monitoring points in each heating zone to obtain a target heating zone; the target heating zone is the heating zone with the most uniform heating temperature; Each heating zone is provided with a plurality of first monitoring points, and the plurality of first monitoring points form a circle.

[0027] Furthermore, the step of obtaining the first real-time temperatures of a plurality of first monitoring points in each heating zone to obtain the target heating zone specifically includes the following steps: When the heating power of the heating component reaches the target heating power corresponding to the target temperature, start timing, and after a first preset time, obtain the first real-time temperature of a plurality of first monitoring points in each of the heating zones; Exemplarily, in the scenario of producing crystalline silicon, at the initial stage of crystal growth, the target temperature is 1200 degrees Celsius, and the corresponding target heating power is 13 kilowatts. When the heating power of the heating component reaches 13 kilowatts, wait for a first preset time, which can be selected as 2 hours, and start obtaining the first real-time temperature of several first monitoring points in each of the heating zones.

[0028] According to the first real-time temperatures of a plurality of first monitoring points in each of the heating zones, at least one first heating zone is obtained, the first heating zone being the heating zone in which the absolute value of the difference between the first real-time temperatures of any two of the first monitoring points is less than a first preset threshold; The first heating zone is a heating zone with uniform temperature. Uniform temperature means that the temperature in all directions around 360 degrees in a heating zone is approximately equal. It should be noted that when the absolute value of the difference between the first real-time temperatures of at least two first monitoring points in all heating zones is greater than or equal to the first preset threshold, another implementation method is implemented, that is, the heating zone with the most approximately equal first real-time temperatures among all heating zones is used as the first heating zone.

[0029] The first real-time temperature average value of each of the first heating zones is calculated, and the first heating zone corresponding to the first real-time temperature average value having the smallest deviation from the target temperature is taken as the target heating zone.

[0030] When there is only one first heating zone, this first heating zone is the target heating zone. When there are multiple first heating zones, the first heating zone is the zone that ensures uniform temperature and is closest to the target temperature.

[0031] Furthermore, the multi-parameter crystal furnace also includes a lifting assembly arranged in the reaction chamber away from the driving assembly, the lifting assembly includes a lifting motor and a lifting rod connected to the output shaft of the lifting motor, the lifting rod extends along the axial direction of the furnace body, and a seed crystal is provided at the end of the lifting rod close to the crucible; After obtaining the target heating area, the following steps are also included: The target growth height of the crystal to be grown, the melt depth of the melt in the crucible, and the highest position to which the lifting rod can lift the seed crystal along the axial direction of the furnace body are obtained; the target growth height is how high the crystal needs to grow to meet production requirements. The lifting rod first lowers the seed crystal into the melt, waits for a certain period of time, and then pulls the seed crystal upward at a certain pulling speed, which will continuously grow the crystal at the growth interface (the contact surface between the melt and the crystal); According to the melt depth and the highest position, a preset growth height of the crystal to be grown is obtained; If the crucible is not in the target heating zone, the target moving distance is calculated, which specifically includes the following steps: When it is determined that the preset growth height is greater than or equal to the target growth height, if the crucible is not in the target heating zone, a target moving distance is calculated.

[0032] This embodiment takes the target growth height into consideration. If the target heating area is in a relatively high heating zone, this will limit the growth height of the crystal. As a result, before the crystal grows to the target growth height, the lifting rod will have reached the upper limit and the seed crystal cannot be pulled up any further, forcing it to stop growing. Therefore, subsequent steps are only executed when the height of the target heating area meets the target growth height requirement of the crystal.

[0033] S2. If the crucible is not in the target heating zone, a target moving distance is calculated, where the target moving distance is the distance between the current position of the crucible and the target heating zone; When the crucible is exactly in the target heating zone, there is no need to drive the assembly to move. When the crucible is not in the target heating zone, the assembly is driven to move upward or downward so that the crucible enters the target heating zone and the melt reaches an area with relatively uniform temperature and closest to the target heating temperature.

[0034] S3, calculating the target rotation angle of each of the nozzles according to the direction and distance of the installation area relative to the target heating area; In a preferred embodiment, the radial center axis of the nozzle along the furnace body is used as the first rotation axis; the target rotation angle of each nozzle is calculated according to the direction and distance of the installation area relative to the target heating area, and at least the following steps are included: Along the axial direction of the furnace body, if the height of the target heating zone is higher than the height of the installation zone, the direction of the installation zone relative to the target heating zone is marked as a low direction; If the height of the target heating area is lower than the height of the installation area, the direction of the installation area relative to the target heating area is marked as the high-position direction; If the height of the target heating area is equal to the height of the installation area, the direction of the installation area relative to the target heating area is marked as the equal position direction; Further, when the direction of the installation area relative to the target heating area is the high-position direction, the nozzle is rotated along the first rotation axis to point to the center of the area of ​​the target heating area as the target rotation angle.

[0035] Specifically, when the installation area is in a high direction relative to the target heating zone, it means that several inflation ports in the installation area are inflated downward, and the gas can reach the target heating zone more advantageously. Since the gas is inflated downward, the gas can reach the crucible below more smoothly under the action of gravity. Therefore, it is only necessary to align each nozzle with the center of the target heating zone, and the melt in the crucible can be fully inflated, thereby ensuring that the melt is fully mixed with the reducing gas.

[0036] Furthermore, the method of calculating the target rotation angle of each of the nozzles according to the direction and distance of the installation area relative to the target heating area further includes the following steps: When the direction of the installation area relative to the target heating area is the low direction, all the nozzles are grouped to obtain a plurality of nozzle groups, each of which includes at least a first nozzle, a second nozzle and a third nozzle; Specifically, the nozzles in the installation area are arranged in a staggered manner, that is, the first nozzle, the second nozzle, the third nozzle, the first nozzle, the second nozzle, the third nozzle...the first nozzle, the second nozzle, the third nozzle.

[0037] When the direction of the installation area relative to the target heating area is the low direction, it means that several gas charging ports in the installation area are charged upwards, which requires overcoming gravity and the influence of the outer wall of the crucible, making it difficult for the reducing gas to reach the melt inside the crucible smoothly. In order to overcome these problems, the following technical means are proposed: Dividing the target heating zone into at least a first simulation partition, a second simulation partition and a third simulation partition along the axial direction of the furnace body; The first nozzle is rotated along the first rotation axis to point to the center of the area of ​​the first simulation partition, and the required rotation angle is used as the first target rotation angle; exemplarily, the first target rotation angle is 45 degrees, and all the first nozzles in the target heating area are rotated upward by 45 degrees.

[0038] The second nozzle is rotated along the first rotation axis to point to the center of the area of ​​the second simulation partition, and the required rotation angle is used as the second target rotation angle; exemplarily, the second target rotation angle is 90 degrees, and all the second nozzles in the target heating area are rotated upward by 90 degrees.

[0039] The third nozzle is rotated along the first rotation axis to point to the area center of the third simulation partition as the third target rotation angle. Exemplarily, the third target rotation angle is 135 degrees, and all the third nozzles in the target heating area are rotated upward by 135 degrees.

[0040] In the present embodiment, a plurality of nozzles with different rotation angles are provided, which spray reducing gas into the target heating area from different angles respectively. The airflows in different directions intersect and mix with each other, which helps to make the reducing atmosphere more evenly fill the area where the crucible is currently located, that is, the target heating area. At this time, the target heating area not only has a uniform temperature, but also a uniform reducing atmosphere environment.

[0041] Further, the central axis of the nozzle along the axial direction of the furnace body is used as the second rotation axis; the target rotation angle of each nozzle is calculated according to the direction and distance of the installation area relative to the target heating area, and the following steps are also included: When the direction of the installation area relative to the target heating area is the equiposition direction, the nozzle is rotated along the second rotation axis to point to the angle required for the next nozzle adjacent to the nozzle as the target rotation angle.

[0042] Specifically, when the direction of the installation area relative to the target heating area is the equipotential direction, it means that the gas filling port on the installation area is in the same area as the crucible. At this time, if the gas filling port is also aimed at the outer wall of the crucible for filling, the airflow direction may be chaotic due to the different degrees of concavity and convexity of the outer wall of the crucible and the different reflections. At this time, the reducing gas is sprayed horizontally along the outer wall of the crucible. Specifically, a circle of annular nozzles are installed, and each nozzle sprays toward the adjacent nozzle on the horizontal plane to form a continuous annular airflow. In this way, an annular airflow can be formed around the crucible, covering the area where the crucible is located more evenly and promoting the uniform distribution of the atmosphere.

[0043] It should be noted that the inflation port can also adjust the inflation speed and inflation flow rate. The inflation speed and inflation flow rate in different modes can be obtained based on multiple experiments or model training. The inflation speed and inflation flow rate can make the reducing atmosphere content in the target heating area reach the target content, and the gas concentration sensor can be used to measure the real-time gas content.

[0044] Furthermore, when the installation area is in a high position relative to the target heating area, the inflation speed of the inflation port is a first inflation speed, and when the installation area is in a low position relative to the target heating area, the inflation speed of the inflation port is a second inflation speed, wherein the first inflation speed is less than the second inflation speed, so as to avoid the influence of the movement of the melt surface on the crystal growth caused by the excessively fast inflation speed when directly inflating the melt in the crucible.

[0045] S4. Control the driving assembly to drive the crucible to move the target moving distance along the axial direction of the furnace body. After the crucible reaches the target heating zone, control each of the nozzles to rotate the target rotation angle so that the inflation direction of the inflation port faces the target heating zone.

[0046] In a preferred embodiment, after obtaining the preset growth height of the crystal to be grown according to the melt depth and the highest position, the following steps are also included: When it is determined that the preset growth height is less than the target growth height, a second heating zone is obtained according to the target growth height, and then a candidate zone set is obtained, wherein the candidate zone set includes the second heating zone and all the heating zones below the second heating zone; the distance between the second heating zone and the highest position is equal to the target growth height; Specifically, if the preset growth height is smaller than the target growth height, it means that although the temperature uniformity can be ensured by selecting the target heating zone at this time, the growth height of the crystal will be limited, which is putting the cart before the horse. At this time, re-planning is needed.

[0047] The second heating zone is the highest heating zone that can ensure that the growth height of the crystal reaches the target growth height. Once the height exceeds the second heating zone, the crystal growth will be restricted. This means that moving the crucible to the second heating zone and any heating zone below the second heating zone can ensure that the crystal growth height reaches the target growth height.

[0048] Screening a secondary target heating area in the candidate area set, wherein the secondary target heating area is the heating area with the most uniform heating temperature in the candidate area set; The heating area with the most uniform temperature is found in the candidate area set by the same method as above, which is the secondary target heating area.

[0049] After controlling the driving component to drive the crucible to move to the secondary target heating zone, start timing, and collect second real-time temperatures of a plurality of second monitoring points on the crucible in real time after a second preset time period to obtain an actual temperature of the crucible; By default, the heating component is always running at the above-mentioned target heating power. After controlling the driving component to drive the crucible to move to the secondary target heating zone, the timing starts. After waiting for a certain period of time, the actual temperature of the crucible is collected. When the actual temperature of the crucible reaches the target temperature, the same action of controlling the nozzle rotation to spray air into the secondary target heating zone can be performed, so that the reducing atmosphere in the secondary target heating zone is stable and uniform.

[0050] Further, if the absolute value of the difference between the actual temperature and the target temperature is greater than a second preset threshold, the target heating power is updated according to the absolute value of the difference between the actual temperature and the target temperature to obtain an updated target heating power; When the actual temperature of the crucible does not reach the target temperature, it means that the current heating power of the heating component, that is, the target heating power, cannot make the crucible in the secondary target heating zone reach the target temperature. At this time, the target heating power should be updated.

[0051] Exemplarily, the actual temperature of the crucible is 1100 degrees, and the previous target heating power is 13 kilowatts. At this time, the target heating temperature is increased to obtain an updated target heating power.

[0052] Specifically, the method of gradually increasing the heating power of the heating component may be adopted, and attempts may be made continuously until the actual temperature of the crucible reaches 1200 degrees. The heating power at this moment is the updated target heating power.

[0053] The heating assembly is controlled to operate at the updated target heating power so that the actual temperature of the crucible in the secondary target heating zone reaches the target temperature.

[0054] Example 2 Please refer to Figure 2 As shown, this embodiment provides a control system for a multi-parameter crystal furnace dynamics, which is used to implement the control method for a multi-parameter crystal furnace dynamics as described in Example 1, including: A collection module, the collection module is configured to obtain the first real-time temperature of a plurality of first monitoring points in each heating zone to obtain a target heating zone; the target heating zone is the heating zone with the most uniform heating temperature; a calculation module, the calculation module being configured to calculate a target moving distance if the crucible is not in the target heating zone, the target moving distance being the distance between the current position of the crucible and the target heating zone; The calculation module is further configured to calculate a target rotation angle of each nozzle according to a direction and a distance of the installation area relative to the target heating area; A control module is configured to control a driving assembly to drive the crucible to move the target moving distance along the axial direction of the furnace body, and after the crucible reaches the target heating zone, control each of the nozzles to rotate the target rotation angle so that the inflation direction of the inflation port is toward the target heating zone.

[0055] Example 3 like Figure 3As shown, the computer system 700 of the terminal device includes a CPU 701, which can perform various appropriate actions and processes according to the program stored in the ROM 702 or the program loaded from the storage part 708 to the RAM 703. In the RAM 703, various programs and data required for system operation are also stored. The CPU 701, the ROM 702 and the RAM 703 are connected to each other through the bus 704. The I / O interface 705 is also connected to the bus 704. The following components are connected to the I / O interface 705: an input part 706 including a keyboard, a mouse, etc.; an output part 707 including a cathode ray tube (CRT), a liquid crystal display (LCD), etc. and a speaker, etc.; a storage part 708 including a hard disk, etc.; and a communication part 709 including a network interface card such as a LAN card, a modem, etc. The communication part 709 performs communication processing via a network such as the Internet. The drive is also connected to the I / O interface 705 as needed. A removable medium 711, such as a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor memory, or the like, is mounted on the drive 710 as needed, so that a computer program read therefrom is installed into the storage section 708 as needed.

[0056] In particular, according to an embodiment of the present invention, the above reference process Figure 1 The described process can be implemented as a computer software program. For example, embodiment 3 of the present invention includes a computer program product, which includes a computer program carried on a computer readable medium, and the computer program contains program code for executing the method shown in the flow chart. In such an embodiment, the computer program can be downloaded and installed from a network through a communication part, and / or installed from a removable medium. When the computer program is executed by CPU 701, the above-mentioned functions defined in the present computer system 700 are executed.

[0057] It should be noted that the computer-readable medium shown in the present invention may be a computer-readable signal medium or a computer-readable storage medium or any combination of the above two. The computer-readable storage medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, device or device, or any combination of the above. More specific examples of computer-readable storage media may include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In the present invention, a computer-readable storage medium may be any tangible medium containing or storing a program that can be used by or in combination with an instruction execution system, device or device. In the present invention, a computer-readable signal medium may include a data signal propagated in a baseband or as part of a carrier wave, which carries a computer-readable program code. This propagated data signal may take a variety of forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination of the above. Computer-readable signal media may also be any computer-readable medium other than computer-readable storage media, which may send, propagate or transmit a program for use by or in conjunction with an instruction execution system, apparatus or device. The program code contained on the computer-readable medium may be transmitted using any appropriate medium, including but not limited to: wireless, wire, optical cable, RF, etc., or any suitable combination of the above.

[0058] The flow chart and block diagram in the accompanying drawings illustrate the possible architecture, functions and operations of the system, method and computer program product according to various embodiments 3 of the present invention. In this regard, each box in the flow chart or block diagram can represent a module, a program segment, or a part of a code, and the above-mentioned module, program segment, or a part of a code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order from the order marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram or flow chart, and the combination of the boxes in the block diagram or flow chart, can be implemented with a dedicated hardware-based system that performs a specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.

[0059] As another aspect, the present invention further provides a computer-readable medium, which may be included in the electronic device described in the above embodiment; or may exist independently without being assembled into the electronic device. The above computer-readable medium carries one or more programs, and when the above one or more programs are executed by an electronic device, the electronic device implements the control method of the multi-parameter crystal furnace dynamics as described in the above embodiment.

[0060] For example, the electronic device may implement Figure 1 As shown in: Step S1. Obtain the first real-time temperatures of several first monitoring points in each heating zone to obtain the target heating zone; the target heating zone is the heating zone with the most uniform heating temperature; Step S2. If the crucible is not in the target heating zone, calculate the target moving distance, which is the distance of the current position of the crucible relative to the target heating zone; Step S3. Calculate the target rotation angle of each of the nozzles according to the direction and distance of the installation area relative to the target heating zone; Step S4. Control the drive assembly to drive the crucible to move the target moving distance along the axial direction of the furnace body, and after the crucible reaches the target heating zone, control each of the nozzles to rotate the target rotation angle so that the inflation direction of the inflation port is toward the target heating zone.

[0061] It should be noted that, although several modules or units of the device for action execution are mentioned in the above detailed description, this division is not mandatory. In fact, according to the embodiments disclosed in the present invention, the features and functions of two or more modules or units described above can be embodied in one module or unit. Conversely, the features and functions of one module or unit described above can be further divided into multiple modules or units to be embodied.

[0062] In addition, although the steps of the method of the present invention are described in a specific order in the drawings, this does not require or imply that the steps must be performed in this specific order, or that all the steps shown must be performed to achieve the desired results. Additionally or alternatively, some steps may be omitted, multiple steps may be combined into one step, and / or one step may be decomposed into multiple steps, etc.

[0063] Through the description of the above implementations, those skilled in the art can easily understand that the example implementations described here can be implemented by software, or by combining software with necessary hardware.

[0064] This article uses specific examples to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core ideas. The above is only a preferred implementation method of the present invention. It should be pointed out that due to the limitations of textual expression, there are objectively infinite specific structures. For ordinary technicians in this technical field, without departing from the principles of the present invention, several improvements, modifications or changes can be made, and the above technical features can be combined in an appropriate manner; these improvements, modifications, changes or combinations, or the direct application of the inventive concept and technical solution to other occasions without improvement, should be regarded as the protection scope of the present invention.

Claims

1. A multi-parameter crystal furnace dynamic control method, characterized in that: It is used to dynamically control the operation of a multi-parameter crystal furnace, which at least includes: A furnace body, wherein the furnace body has a reaction chamber, wherein a crucible is arranged in the reaction chamber, wherein the furnace body has a mounting area along its axial direction, and wherein the reaction chamber includes a plurality of heating areas along the axial direction of the furnace body; A charging assembly, the charging assembly comprising a gas source installed outside the reaction chamber for providing reducing gas and a plurality of charging ports evenly distributed on the installation area, each of the charging ports being installed with a nozzle, the nozzle being used to change the charging direction of the corresponding charging port to charge the reducing gas into the reaction chamber; A heating component, the heating component is disposed in the reaction chamber, and the heating component is used to provide heat to the reaction chamber; A driving assembly, the driving assembly is arranged in the reaction chamber and at the bottom of the furnace body, and the driving assembly is used to drive the crucible to move along the axial direction of the furnace body and / or to rotate along the axis of the furnace body; The control method comprises the following steps: Acquire the first real-time temperatures of a plurality of first monitoring points in each heating zone to obtain a target heating zone; the target heating zone is the heating zone with the most uniform heating temperature; If the crucible is not in the target heating zone, a target moving distance is calculated, where the target moving distance is the distance between the current position of the crucible and the target heating zone; Calculating a target rotation angle of each of the nozzles according to the direction and distance of the installation area relative to the target heating area; The driving assembly is controlled to drive the crucible to move the target moving distance along the axial direction of the furnace body. After the crucible reaches the target heating zone, each nozzle is controlled to rotate the target rotation angle so that the inflation direction of the inflation port is toward the target heating zone.

2. The multi-parameter crystal furnace dynamic control method according to claim 1, characterized in that: The step of obtaining the first real-time temperatures of a plurality of first monitoring points in each heating zone to obtain the target heating zone specifically includes the following steps: When the heating power of the heating component reaches the target heating power corresponding to the target temperature, start timing, and after a first preset time, obtain the first real-time temperature of a plurality of first monitoring points in each of the heating zones; According to the first real-time temperatures of a plurality of first monitoring points in each of the heating zones, at least one first heating zone is obtained, the first heating zone being the heating zone in which the absolute value of the difference between the first real-time temperatures of any two of the first monitoring points is less than a first preset threshold; The first real-time temperature average value of each of the first heating zones is calculated, and the first heating zone corresponding to the first real-time temperature average value having the smallest deviation from the target temperature is taken as the target heating zone.

3. The multi-parameter crystal furnace dynamic control method according to claim 1, characterized in that: The multi-parameter crystal furnace further comprises a lifting assembly disposed in the reaction chamber away from the driving assembly, the lifting assembly comprising a lifting motor and a lifting rod connected to an output shaft of the lifting motor, the lifting rod extending along the axial direction of the furnace body, and a seed crystal being disposed at an end of the lifting rod close to the crucible; After obtaining the target heating area, the following steps are also included: Obtaining a target growth height of the crystal to be grown, a melt depth of the melt in the crucible, and a highest position at which the lifting rod can lift the seed crystal to move axially along the furnace body; According to the melt depth and the highest position, a preset growth height of the crystal to be grown is obtained; If the crucible is not in the target heating zone, the target moving distance is calculated, which specifically includes the following steps: When it is determined that the preset growth height is greater than or equal to the target growth height, if the crucible is not in the target heating zone, a target moving distance is calculated.

4. The multi-parameter crystal furnace dynamic control method according to claim 1, characterized in that: The radial center axis of the nozzle along the furnace body is used as the first rotation axis; the target rotation angle of each nozzle is calculated according to the direction and distance of the installation area relative to the target heating area, which at least includes the following steps: Along the axial direction of the furnace body, if the height of the target heating zone is higher than the height of the installation zone, the direction of the installation zone relative to the target heating zone is marked as a low direction; If the height of the target heating area is lower than the height of the installation area, the direction of the installation area relative to the target heating area is marked as the high-position direction; If the height of the target heating area is equal to the height of the installation area, the direction of the installation area relative to the target heating area is marked as the equal position direction; When the direction of the installation area relative to the target heating area is the high-position direction, the nozzle is rotated along the first rotation axis to point to the center of the target heating area, and the required rotation angle is used as the target rotation angle.

5. The multi-parameter crystal furnace dynamic control method according to claim 4, characterized in that: The step of calculating the target rotation angle of each nozzle according to the direction and distance of the installation area relative to the target heating area further includes the following steps: When the direction of the installation area relative to the target heating area is the low direction, all the nozzles are grouped to obtain a plurality of nozzle groups, each of which includes at least a first nozzle, a second nozzle and a third nozzle; Dividing the target heating zone into at least a first simulation partition, a second simulation partition and a third simulation partition along the axial direction of the furnace body; The first nozzle is rotated along the first rotation axis to point to the center of the area of ​​the first simulation partition as a first target rotation angle; Rotate the second nozzle along the first rotation axis to point to the center of the second simulation partition to obtain a second target rotation angle; The third nozzle is rotated along the first rotation axis to point to the center of the third simulation partition, and the required rotation angle is used as the third target rotation angle.

6. The multi-parameter crystal furnace dynamic control method according to claim 4, characterized in that: The central axis of the nozzle along the axial direction of the furnace body is used as the second rotation axis; the target rotation angle of each nozzle is calculated according to the direction and distance of the installation area relative to the target heating area, and the following steps are also included: When the direction of the installation area relative to the target heating area is the equiposition direction, the nozzle is rotated along the second rotation axis to point to the angle required for the next nozzle adjacent to the nozzle as the target rotation angle.

7. The multi-parameter crystal furnace dynamic control method according to claim 3, characterized in that: After obtaining the preset growth height of the crystal to be grown according to the melt depth and the highest position, the following steps are also included: When it is determined that the preset growth height is less than the target growth height, a second heating zone is obtained according to the target growth height, and then a candidate zone set is obtained, wherein the candidate zone set includes the second heating zone and all the heating zones below the second heating zone; the distance between the second heating zone and the highest position is equal to the target growth height; Screening a secondary target heating area in the candidate area set, wherein the secondary target heating area is the heating area with the most uniform heating temperature in the candidate area set; After controlling the driving component to drive the crucible to move to the secondary target heating zone, start timing, and collect second real-time temperatures of a plurality of second monitoring points on the crucible in real time after a second preset time period to obtain an actual temperature of the crucible; If the absolute value of the difference between the actual temperature and the target temperature is greater than a second preset threshold, updating the target heating power according to the absolute value of the difference between the actual temperature and the target temperature to obtain an updated target heating power; The heating assembly is controlled to operate at the updated target heating power so that the actual temperature of the crucible in the secondary target heating zone reaches the target temperature.

8. A control system for multi-parameter crystal furnace dynamics, used to implement the multi-parameter crystal furnace dynamics control method according to any one of claims 1 to 7, characterized in that: include: A collection module, wherein the collection module is configured to obtain first real-time temperatures of a plurality of first monitoring points in each heating zone to obtain a target heating zone; The target heating zone is the heating zone with the most uniform heating temperature; a calculation module, the calculation module being configured to calculate a target moving distance if the crucible is not in the target heating zone, the target moving distance being the distance between the current position of the crucible and the target heating zone; The calculation module is further configured to calculate a target rotation angle of each nozzle according to a direction and a distance of the installation area relative to the target heating area; A control module is configured to control a driving assembly to drive the crucible to move the target moving distance along the axial direction of the furnace body, and after the crucible reaches the target heating zone, control each of the nozzles to rotate the target rotation angle so that the inflation direction of the inflation port is toward the target heating zone.

9. A terminal device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the computer program, the steps of the method for controlling the dynamics of a multi-parameter crystal furnace as claimed in any one of claims 1 to 7 are implemented.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method for controlling the dynamics of a multi-parameter crystal furnace as described in any one of claims 1 to 7 are implemented.

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