Sensor

Abstract

The invention provides a sensor which comprises a chip assembly, the chip assembly comprises a main body layer group, a sensing layer group and a thermistor, at least part of the main body layer group is connected with the sensing layer group, and at least part of the thermistor is located between the main body layer group and the sensing layer group; and at least one of the main body layer group and the sensing layer group is connected with the thermistor. According to the chip assembly, the thermistor is at least partially located between the main body layer group and the sensing layer group, so that the thermistor can be integrated in the chip assembly more firmly, and the reliability is improved.

Description

Technical Field

[0001] The present application relates to the technical field of sensors, and in particular to a sensor. Background Art

[0002] In the related art, the chip assembly and the thermistor are separately provided. When the chip assembly and the thermistor are integrated, the thermistor is connected to the filling layer on the surface of the chip assembly, and the thermistor is easy to fall off from the chip assembly. Summary of the invention

[0003] The present application provides a sensor, including a chip assembly, wherein the chip assembly includes a main layer group, a sensing layer group and a thermistor, wherein the main layer group is at least partially connected to the sensing layer group, and the thermistor is at least partially located between the main layer group and the sensing layer group; at least one of the main layer group and the sensing layer group is connected to the thermistor.

[0004] In the present application, the thermistor is at least partially located between the main layer group and the sensing layer group, so that the thermistor can be more securely integrated into the chip assembly, thereby improving reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] Figure 1 is a schematic cross-sectional view of a chip assembly of the present application;

[0006] Figure 2 is a cross-sectional schematic diagram of the chip assembly of the present application with the electrical connection portion and the filling layer removed;

[0007] Figure 3 yes Figure 1 The enlarged schematic diagram of the middle circle A;

[0008] Figure 4 It is a cross-sectional schematic diagram of the sensor of the present application. DETAILED DESCRIPTION

[0009] The exemplary embodiments of the present application are described in detail below in conjunction with the accompanying drawings. In the absence of conflict, the features of the following embodiments and implementations can be combined with each other.

[0010] In the related art, when the thermistor is integrated into the chip component of the sensor, it will be connected to the surface of the chip component. When the gas is detected, the thermistor senses the temperature, but the integration of the thermistor is low and it is easy to fall off. How to solve the reliability of thermistor connection is an urgent problem to be solved. Most of the solutions disclosed in the related art focus on changing the connection method or the type of material at the connection point, thereby improving the reliability of the connection. However, in the actual research and development and application process, the researchers found that due to the thin thickness of the layers that make up the chip component, integrating the thermistor between the layers did not have much effect on the temperature detection of the gas.

[0011] The present application provides a sensor such as Figure 1-4 As shown, its specific structure includes a chip component 1, which includes a main layer group 11, a sensing layer group 12 and a thermistor 14. The main layer group 11 is at least partially connected to the sensing layer group 12, and the thermistor 14 is at least partially located between the main layer group 11 and the sensing layer group 12; at least one of the main layer group 11 and the sensing layer group 12 is connected to the thermistor 14.

[0012] When the thermistor 14 is integrated, it is set between the main layer group 11 and the sensing layer group 12. Compared with setting the thermistor 14 on the surface of the main layer group 11 or the sensing layer group 12, the reliability of the connection is higher, and the thermistor 14 is prevented from falling off. The main layer group 11 constitutes the main body of the chip assembly 1, and the sensing layer group 12 serves as the facing side of the gas detection. The two roughly constitute the overall structure of the chip assembly 1. When sensing the gas, the sensing layer group 12 serves as the receiving surface in contact with the gas. When contacting the gas, the thermistor 14 located between the main layer group 11 and the sensing layer group 12 senses the gas. Among them, the thermistor 14 can be connected to the main layer group 11, can also be connected to the sensing layer group 12, or can be connected to the main layer group 11 and the sensing layer group 12 at the same time. The connection method can be direct contact connection, or it can be connected to the main layer group 11 or the sensing layer group 12 through a medium. The material of the medium can be a semiconductor material, an insulating material, etc., which is not limited in this application.

[0013] like Figure 1 As shown, the chip component 1 includes a varistor 13, which is at least partially located between the main layer group 11 and the sensing layer group 12. The chip component 1 has a cavity 15, which is located in the main layer group 11. On the projection plane perpendicular to the thickness direction of the sensing layer group 12, the varistor 13 at least partially falls into the cavity 15; the sensor has temperature and pressure sensing states, and in the temperature and pressure sensing states, the varistor 13 and the thermistor 14 can be electrically connected.

[0014] The varistor 13 can realize the inductive detection of gas pressure. The varistor 13 and the thermistor 14 are both located between the main layer group 11 and the sensing layer group 12, which also improves the integration of the varistor 13. Among them, the cavity 15 formed by the anodic bonding glass between the main layer group 11 and the sensing layer group 12 is a vacuum cavity, which is recorded in the relevant technology and will not be repeated here. Similarly, when the gas is sensed, the gas contacts the sensing layer group 12, and the pressure of the gas exerts a certain force on the sensing layer group 12, causing the sensing layer group 12 to deform, thereby pressing against the varistor 13, and the cavity 15 is a vacuum cavity. When the pressure of the gas causes the sensing layer group 12 to deform toward the cavity 15 and is transmitted to the varistor 13, the gas pressure sensed by the varistor 13 will be more accurate, thereby improving the accuracy of the detection.

[0015] The principle of pressure detection can be detected by using a Wheatstone bridge to detect gas pressure, which is also recorded in the relevant technology, and its principle will not be repeated here. Under this principle, the electrical connection between the varistor 13 and the thermistor 14 can simultaneously sense and detect the pressure and temperature of the gas, which not only has a higher degree of integration, but also makes the detection more convenient. The integration of the thermistor 14 between the main layer group 11 and the sensing layer group 12 also makes the overall volume of the chip component 1 smaller than integrating the thermistor 14 on the surface of the chip component 1, which is also more conducive to reducing the overall volume of the sensor.

[0016] like Figure 1-2 As shown, the sensing layer group 12 has a first installation groove 121 , and the varistor 13 is at least partially located in the first installation groove 121 ; the varistor 13 is at least partially in contact with the main layer group 11 .

[0017] The first installation groove 121 provides a point for the connection and installation of the varistor 13. On the other hand, the first installation groove 121 also has a positioning function for the varistor 13. When the sensing layer group 12 is subjected to the pressure of the gas, it will transfer the pressure to the varistor 13 in the direction close to the cavity 15. During the deformation process of the sensing layer group 12, the varistor 13 is subjected to the force to sense the pressure of the gas, and the force direction of the sensing layer group 12 on the varistor 13 under the pressure of the gas is also toward the cavity 15. The varistor 13 is at least partially opposite to the position of the cavity 15, so that the result of the sensing detection of the varistor 13 is more accurate. The first installation groove 121 also makes the installation position of the varistor 13 more accurate, further improving the result of the sensing detection of the varistor 13. The first installation groove 121 also enables the varistor 13 to reduce the overall volume of the chip assembly 1 after installation.

[0018] like Figure 1-2As shown, the main layer group 11 includes a first layer 111, a second layer 112 and a third layer 113. In the thickness direction of the main layer group 11, the first layer 111, the second layer 112 and the third layer 113 are stacked in sequence; the first layer 111 and the second layer 112 are sealed and connected, the second layer 112 and the third layer 113 are sealed and connected, and the third layer 113 is closer to the sensing layer group 12 than the first layer 111.

[0019] Among them, the first layer 111 has a groove 1111, and the groove 1111 is recessed from the side of the first layer 111 close to the sensing layer group 12 to the direction away from the sensing layer group 12; the second layer 112 has a through groove 1121, and in the thickness direction of the second layer 112, the through groove 1121 penetrates the second layer 112; the inner wall of the groove 1111, the side wall of the through groove 1121 and the third layer 113 are all located at the periphery of the cavity 15.

[0020] The first layer 111 is made of single crystal silicon, and the second layer 112 and the third layer 113 are made of silicon dioxide or a composite material of silicon dioxide and silicon nitride; the purity of silicon dioxide in the third layer 113 is higher than that in the second layer 112, and the second layer 112 and the third layer 113 have a connecting function and also an insulating function. The application of insulating materials can reduce the flow of part of the induced current generated by the varistor 13 to the first layer 111, thereby improving the accuracy of pressure detection.

[0021] After the first layer 111 , the second layer 112 and the third layer 113 are stacked and connected, the groove 1111 , the through groove 1121 and one side of the third layer 113 enclose a cavity 15 , and the cavity 15 is a vacuum cavity, which improves the accuracy of the induction detection.

[0022] In one embodiment, the sensing layer group 12 has a second mounting groove 122 , and the thermistor 14 is at least partially located in the second mounting groove 122 ; the varistor 13 is doped with boron, the thermistor 14 is doped with phosphorus, and the sensing layer group 12 is doped with phosphorus.

[0023] The second mounting groove 122 has the same function as the first mounting groove 121. On the one hand, it has the function of installing and positioning the thermistor 14, and on the other hand, it also has the function of reducing the overall volume of the chip assembly 1. If there were no first mounting groove 121 and second mounting groove 122, the thickness of the chip assembly 1 would increase in the thickness direction of the chip assembly 1, thereby increasing the overall volume of the chip assembly 1. In the temperature and pressure sensing state, the electrical connection between the varistor 13 and the thermistor 14 specifically refers to: by doping the varistor 13 with boron and the thermistor 14 with phosphorus to form a PN junction, the pressure and temperature of the gas can be sensed and detected synchronously.

[0024] The varistor 13 and the thermistor 14 are respectively located in the first installation groove 121 and the second installation groove 122. Although there is no direct contact, after the sensing layer group 12 is doped with phosphorus, the varistor 13 can indirectly form a PN junction with the thermistor 14 to achieve the same effect. Among them, the material of the sensing layer group 12 is also single crystal silicon, and the content of the phosphorus doped is lower than the phosphorus doped in the thermistor 14.

[0025] In another embodiment, the thermistor 14 is at least partially located in the first mounting groove 121 , and the varistor 13 is in contact with the thermistor 14 ; the varistor 13 is doped with boron, and the thermistor 14 is doped with phosphorus.

[0026] The thermistor 14 may also be directly located in the first installation groove 121 , and the thermistor 14 is in direct contact with the varistor 13 to form a PN junction, thereby realizing synchronous sensing and detecting of the pressure and temperature of the gas.

[0027] like Figure 1 and 3 As shown, the chip assembly 1 includes a plurality of electrical connection parts 16 , which are embedded in the main layer group 11 ; some of the electrical connection parts 16 are electrically connected to the varistor 13 , and another part of the electrical connection parts 16 are electrically connected to the thermistor 14 .

[0028] The electrical connection portion 16 can be used to connect the varistor 13 and the thermistor 14 to an external circuit. If the varistor 13 and the thermistor 14 are directly exposed to the outside of the chip component 1, on the one hand, the reliability of the connection is difficult to ensure. On the other hand, if the varistor 13 and the thermistor 14 are exposed to the outside of the chip component 1, they will be easily affected by the external environment, thereby making the result of the induction detection inaccurate.

[0029] like Figure 1-3 As shown, the main layer group 11 has a plurality of connecting holes 114, and the connecting holes 114 include a first hole 1141, a second hole 1142 and a third hole 1143, and the first hole 1141, the second hole 1142 and the third hole 1143 are connected; in the thickness direction of the main layer group 11, the first hole 1141 penetrates the first layer 111, the second hole 1142 penetrates the second layer 112, and the third hole 1143 penetrates the third layer 113; the electrical connection part 16 is at least partially located in the connecting hole 114.

[0030] The connecting hole 114 can be used to connect and install the electrical connection part 16, so that the varistor 13 and the thermistor 14 located between the sensing layer group 12 and the main layer group 11 can be connected to the external circuit through the electrical connection part 16. Similarly, the first hole 1141, the second hole 1142 and the third hole 1143 are connected to form the connecting hole 114 after the first layer 111, the second layer 112 and the third layer 113 are stacked and connected.

[0031] like Figure 3 As shown, the electrical connection part 16 includes a first conductive part 161, a second conductive part 162 and a connecting ear 163, the first conductive part 161 is at least partially located in the third hole 1143, the second conductive part 162 is partially located in the second hole 1142, and the second conductive part 162 is partially located in the first hole 1141; the chip assembly 1 includes a filling layer 17, the filling layer 17 is connected to the first layer 111, the filling layer 17 is partially located in the connecting hole 114, and the connecting ear 163 is at least partially embedded in the filling layer 17; the connecting ear 163 is electrically connected to the second conductive part 162, the second conductive part 162 is electrically connected to the first conductive part 161, and the first conductive part 161 can be electrically connected to the varistor 13 or the thermistor 14.

[0032] In one embodiment, the first conductive part 161, the second conductive part 162 and the connecting ear 163 are split structures, which is convenient for installation and processing and production of parts. The main layer group 11 is formed by stacking and connecting each layer. When each layer is connected, the first conductive part 161, the second conductive part 162 and the connecting ear 163 can be respectively connected and installed at corresponding positions to improve the tightness of the connection and prevent poor contact.

[0033] In another embodiment, the first conductive portion 161, the second conductive portion 162 and the connecting ear 163 are an integrated structure, which can improve the integrity of the electrical connecting portion 16 and ensure the stability of electrical conduction. At the same time, the integrated structure also increases the speed of connection and installation, making it faster.

[0034] In the above two embodiments, the chip assembly 1 also includes a third conductive part 164, and the third conductive part 164 includes a plurality of third conductive parts 164, which are respectively located in the first mounting groove 121 and the second mounting groove 122, and the third conductive parts 164 in the corresponding mounting grooves are respectively in contact with the varistor 13 and the thermistor 14 in the corresponding mounting grooves. Both the varistor 13 and the thermistor 14 can be electrically connected to the electrical connection part 16 through the third conductive part 164 to achieve electrical conduction.

[0035] The chip assembly 1 further includes an interlayer 18, which is at least partially located between the filling layer 17 and the first layer 111. The two sides of the interlayer 18 in the thickness direction are respectively connected to the first layer 111 and the filling layer 17. The filling layer 17 is made of silicon dioxide, which has a connecting function on the one hand and a further insulating function on the other hand. The filling layer 17 is connected to the surface of the interlayer 18 and is indirectly connected to the first layer 111 through the interlayer 18. The filling layer 17 is a negative photoresist, or a dry film for packaging, or a metal, which is used to fill the connecting hole 114 to improve the tightness of the overall structural connection of the chip assembly 1 and prevent the electrical connection part 16 from falling off.

[0036] In addition, the chip assembly 1 also includes a substrate 19, which is connected to the sensing layer group 12. The substrate 19 has an inlet 20. On a projection plane perpendicular to the thickness direction of the chip assembly 1, the inlet 20 is at least partially opposite to the cavity 15. The inlet 20 falls into the area where the cavity 15 is located, so that the gas can contact the sensing layer group 12 when entering the inlet 20.

[0037] like Figure 4 As shown, the sensor includes a shell 2, a metal base 3, and a metal plug wire 4. The chip component 1 is at least partially located in the shell 2. The shell 2 has a detection port 21, and the detection port 21 faces the sensing layer group 12. The chip component 1 is electrically connected to the metal base 3, and the metal base 3 and the metal plug wire 4 can be electrically connected.

[0038] When the chip assembly 1 is used, it is assembled into the housing 2, the chip assembly 1 is connected to the metal base 3, the metal base 3 is electrically connected to the metal plug wire 4 through the connecting wire 5, wherein the housing 2 is also provided with a first PCB board 6, the first PCB board 6 is connected to the metal base 3, the chip assembly 1 is located between the first PCB board 6 and the metal base 3, the first PCB board 6 and the chip assembly 1 can also be connected, and the metal plug wire 4 can also be connected to the connecting wire 5 through the second PCB board 7 provided on the housing 2. Wherein, when detecting gas, the gas enters the housing 2 from the detection port 21, wherein the first PCB board 6 is provided with a hole so that the gas will not be blocked by the first PCB board 6, and then the gas can enter the inlet 20 from the hole, and then contact the sensing layer group 12, and then the varistor 13 and the thermistor 14 can sense and detect the pressure and temperature of the gas.

[0039] The above implementation modes are only used to illustrate the present application and are not intended to limit the technical solutions described in the present application. The understanding of the present application should be based on the technical personnel in the relevant technical field. Although the present application has been described in detail in this specification with reference to the above implementation modes, ordinary technical personnel in the field should understand that the technical personnel in the relevant technical field can still modify or make equivalent substitutions to the present application, and all technical solutions and improvements thereof that do not depart from the spirit and scope of the present application should be included in the scope of the claims of the present application.

Claims

1. A sensor, characterized in that: The chip assembly (1) comprises a main body layer group (11), a sensing layer group (12) and a thermistor (14); the main body layer group (11) is at least partially connected to the sensing layer group (12); the thermistor (14) is at least partially located between the main body layer group (11) and the sensing layer group (12); and at least one of the main body layer group (11) and the sensing layer group (12) is connected to the thermistor (14).

2. The sensor according to claim 1, characterized in that The chip component (1) comprises a varistor (13), wherein the varistor (13) is at least partially located between the main layer group (11) and the sensing layer group (12); the chip component (1) has a cavity (15), wherein the cavity (15) is located in the main layer group (11); and on a projection plane perpendicular to a thickness direction of the sensing layer group (12), the varistor (13) at least partially falls into the cavity (15); The sensor has a temperature-sensing and pressure-sensing state, and in the temperature-sensing and pressure-sensing state, the varistor (13) and the thermistor (14) can be electrically connected.

3. The sensor according to claim 2, characterized in that The sensing layer group (12) has a first installation groove (121), and the varistor (13) is at least partially located in the first installation groove (121); the varistor (13) is at least partially in contact with the main layer group (11).

4. The sensor according to claim 2 or 3, characterized in that: The main layer group (11) comprises a first layer (111), a second layer (112) and a third layer (113); in the thickness direction of the main layer group (11), the first layer (111), the second layer (112) and the third layer (113) are stacked in sequence; The first layer (111) and the second layer (112) are sealed and connected, the second layer (112) and the third layer (113) are sealed and connected, and the third layer (113) is closer to the sensing layer group (12) than the first layer (111).

5. The sensor according to claim 4, characterized in that The first layer (111) has a groove (1111), and the groove (1111) is recessed from a side of the first layer (111) close to the sensing layer group (12) toward a direction away from the sensing layer group (12); The second layer (112) has a through groove (1121), and in the thickness direction of the second layer (112), the through groove (1121) penetrates the second layer (112); The inner wall of the groove (1111), the side wall of the through groove (1121) and the third layer (113) are all located at the periphery of the cavity (15).

6. The sensor according to claim 3 or 5, characterized in that: The sensing layer group (12) has a second installation groove (122), and the thermistor (14) is at least partially located in the second installation groove (122); the varistor (13) is doped with boron, the thermistor (14) is doped with phosphorus, and the sensing layer group (12) is doped with phosphorus; Alternatively, the thermistor (14) is at least partially located in the first mounting groove (121), and the varistor (13) is in contact with the thermistor (14); the varistor (13) is doped with boron, and the thermistor (14) is doped with phosphorus.

7. The sensor according to claim 6, characterized in that The chip assembly (1) comprises a plurality of electrical connection parts (16), wherein the electrical connection parts (16) are embedded in the main body layer group (11); Part of the electrical connection portion (16) is electrically connected to the varistor (13), and another part of the electrical connection portion (16) is electrically connected to the thermistor (14).

8. The sensor according to claim 7, characterized in that The main body layer group (11) has a plurality of communicating holes (114), wherein the communicating holes (114) include a first hole (1141), a second hole (1142) and a third hole (1143), and the first hole (1141), the second hole (1142) and the third hole (1143) are connected; In the thickness direction of the main body layer group (11), the first hole (1141) penetrates the first layer (111), the second hole (1142) penetrates the second layer (112), and the third hole (1143) penetrates the third layer (113); The electrical connection portion (16) is at least partially located in the communication hole (114).

9. The sensor according to claim 8, characterized in that The electrical connection portion (16) comprises a first conductive portion (161), a second conductive portion (162) and a connection ear (163), wherein the first conductive portion (161) is at least partially located in the third hole (1143), the second conductive portion (162) is partially located in the second hole (1142), and the second conductive portion (162) is partially located in the first hole (1141); The chip assembly (1) comprises a filling layer (17), the filling layer (17) is connected to the first layer (111), a portion of the filling layer (17) is located in the connecting hole (114), and the connecting ear (163) is at least partially embedded in the filling layer (17); The connecting ear (163) is electrically connected to the second conductive part (162), the second conductive part (162) is electrically connected to the first conductive part (161), and the first conductive part (161) is electrically connectable to the varistor (13) or the thermistor (14).

10. The sensor according to claim 9, characterized in that The sensor comprises a shell (2), a metal base (3), and a metal plug wire (4); the chip component (1) is at least partially located in the shell (2); the shell (2) has a detection port (21), the detection port (21) faces the sensing layer group (12); the chip component (1) is electrically connected to the metal base (3), and the metal base (3) is electrically connectable to the metal plug wire (4).

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