Scintillator device regulated and controlled by surface conical array and preparation and application of scintillator device

Abstract

The invention relates to a surface conical array regulated scintillator device and preparation and application thereof. The scintillator device comprises: a scintillator; the conical array covers the light emitting surface of the scintillator and is formed by arranging a plurality of polystyrene nanocones in a periodic hexagonal close packing structure. Compared with the prior art, the surface conical array provided by the invention can effectively improve the first light extraction efficiency of the scintillator and reduce the time dispersion of light emission, thereby improving the time resolution and the like of the scintillation detector.

Description

Technical Field

[0001] The invention belongs to the technical field of nuclear radiation detection, and relates to a scintillator device regulated by a surface cone array and its preparation and application. Background Art

[0002] The core of nuclear radiation detection is detector technology, among which scintillation detectors are crucial in detecting radiation field particles and ray information. Scintillation detectors are of great significance for the understanding of nuclear radiation phenomena, the generation mechanism of nuclear processes, and the study of the characteristic laws of radioactive phenomena, and have an irreplaceable position in the fields of nuclear medical imaging, high-energy physics experiments, and national defense security. Scintillation detectors are often used for nuclear radiation detection, and their core material is scintillator. After absorbing high-energy radiation, scintillator can convert radiation into scintillation light in the near-ultraviolet to visible region. By detecting these scintillation lights, high-energy radiation can be detected.

[0003] The temporal resolution of scintillation detectors is an important indicator in ultrafast radiation detection. It is used to measure the accuracy of the detector in determining the time of radiation events. This indicator is usually used to describe the ability of the detector to identify and distinguish fast and continuous events. In the review "Roadmap toward the 10ps time-of-flight PET challenge" published by Paul Lecoq in the journal Physics in Medicine and Biology, Vol. 65, No. 21, p. RM01 on October 20, 2020, it is mentioned that the higher the temporal resolution of the scintillation detector, the more accurately the time of each event can be determined, thereby reducing the possibility of overlap and confusion, which is of great significance in the fields of particle identification and time-of-flight positron emission tomography (TOF-PET). The temporal resolution measurement value of the scintillation detector is determined by the rise and decay time of the detected scintillator and the total number of detected photons. The faster the luminescence rise and decay time and the higher the photon yield, the higher the detector temporal resolution can be obtained.

[0004] Scintillators are a type of material that can produce scintillation light under radiation excitation and are widely used in various types of nuclear radiation detection equipment. According to the material composition, scintillators can be divided into two categories: inorganic and organic. Inorganic scintillators usually have high density and high light yield, so they are suitable for the detection of high-energy gamma rays; while organic scintillators are used for the detection of particles such as fast neutrons and high-energy electrons due to their fast response speed and easy processing.

[0005] However, whether it is an inorganic scintillator or an organic scintillator, the high refractive index material causes the scintillation light to be trapped inside the material due to total internal reflection and cannot be emitted, thereby reducing the light output. The application of the reflective wrapping layer of the traditional method will also increase the time dispersion characteristics of the scintillation photons, thereby affecting the detection efficiency and time resolution of the detector.

[0006] Chinese patent CN217981867U discloses a scintillator structure, a PET scintillator array and a PET scanning device. The device and method use physical drilling to add total reflection or diffuse reflection microchannels inside the scintillator to reduce the flight time of scintillation photons and thus improve the temporal resolution of the detector. However, it still cannot effectively suppress the insufficient detection performance caused by the total internal reflection effect caused by the high refractive index of the scintillator light-emitting surface. Summary of the invention

[0007] The purpose of the present invention is to provide a scintillator device controlled by a surface cone array and a preparation method thereof, which will significantly improve the time resolution of the scintillator in a radiation detector.

[0008] The purpose of the present invention can be achieved by the following technical solutions:

[0009] In a first aspect, the present invention provides a scintillator device regulated by a surface cone array, comprising:

[0010] Scintillator;

[0011] And a cone array covering the light-emitting surface of the scintillator, wherein the cone array is composed of a plurality of polystyrene nano cones arranged in a periodic hexagonal close-packed structure.

[0012] Furthermore, the height of each polystyrene nanocone is 100-200 nm, the taper is between 2-4.5 (corresponding to the ratio of the cone diameter to the height), and the interval between two adjacent polystyrene nanocones (the interval refers to the distance between the centers of two adjacent nanocones minus the cone diameter) is 50-100 nm.

[0013] Furthermore, the period of the cone array is 300-600 nm. Here, the period refers to the distance between the centers of two adjacent polystyrene nanocones, and the periodic hexagonal close-packed structure means that each spherical shell structural unit is surrounded by six adjacent polystyrene nanocones.

[0014] Furthermore,

[0015] When the incident scintillation light with a central wavelength of λ is coupled with the nanocone array, the total reflected light caused by the high refractive index of the scintillator interacts with the array. When the following conditions are met, the scintillation light can be extracted:

[0016]

[0017] where k ∥ is the parallel component of the incident light, a is the period of the array, and p is the diffraction order. From the above formula, it can be seen that only when the array period is close to the wavelength of the incident light can the light extraction efficiency be maximized.

[0018] Specifically, for scintillation light with a central wavelength of λ, when light extraction is realized by the above formula, it is necessary to ensure that the period a of the array is near the wavelength scale and above the sub-wavelength scale:

[0019]

[0020] Furthermore, the scintillator is a plastic scintillator or an inorganic scintillator.

[0021] Furthermore, the plastic scintillator includes a plastic scintillator with polyvinyltoluene, polymethyl methacrylate or polystyrene as a matrix;

[0022] The inorganic scintillator is glass scintillator, (Lu, Y) 2 SiO 5: Ce, Bi 4 Ge 3 O 12 、ZnO:Ga、Y3Al5O 12 :Ce, Gd3Al2Ga3O 12 :Ce, CsI:Tl, NaI:Tl, BaF2 or PbWO4.

[0023] In a second aspect, the present invention provides a method for preparing a scintillator device regulated by a surface cone array, comprising the following steps:

[0024] (1) Forming a polystyrene microsphere array with a periodic hexagonal close-packed structure on the light-emitting surface of the scintillator by a microsphere self-assembly method;

[0025] (2) immersing part of the sample obtained in step (1) in a cooling liquid and placing it in an oven for heating to prepare a sample with a hemispherical array structure;

[0026] (3) The sample of the hemispherical array structure obtained in step (2) is subjected to plasma etching to generate a polystyrene cone array. The process is completed.

[0027] Furthermore, the process of forming a polystyrene microsphere array with a periodic hexagonal close-packed structure by the microsphere self-assembly method is as follows:

[0028] First, prepare a 4-6% mass fraction of sodium dodecyl methyl sulfate aqueous solution, and place the silicon wafer in the solution for 8-16 hours;

[0029] Then, a polystyrene microsphere suspension having a concentration of 40-60 mg / mL and a diameter of 400-600 nm, deionized water, and anhydrous ethanol are mixed in a volume ratio of 1: (0.5-1.5): (1.5-2.5), and ultrasonically mixed to obtain a polystyrene microsphere mixed solution;

[0030] Next, the polystyrene microsphere mixture is dripped onto the treated, cleaned and dried silicon wafer, and waited for it to fully diffuse and the water and ethanol to completely evaporate;

[0031] Continue to tilt the silicon wafer after the water and ethanol have completely evaporated and place it in deionized water to separate the silicon wafer from the polystyrene microsphere array attached to the surface;

[0032] Finally, the scintillator with a clean surface is brought close to the water surface in deionized water and fits onto the floating polystyrene microsphere array, so that the polystyrene microsphere array is completely attached to the light-emitting surface of the scintillator.

[0033] Furthermore, in step (2), the sample obtained in step (1) is placed in a cooling liquid with the light emitting surface facing upward, and the immersion depth satisfies: the liquid level of the cooling liquid is lower than the light emitting surface of the scintillator;

[0034] The heating temperature is 95-115° C., the heating time is 10-20 minutes, and during the heating process, the liquid surface of the cooling liquid is kept to always immerse at least a part of the scintillator.

[0035] Before plasma etching, the polystyrene microspheres need to be heated to a temperature higher than their glass transition temperature (90°C) during the preparation process. The heating temperature is usually between 95°C and 115°C, and the heating time is 10-20 minutes. For scintillator materials with a glass transition temperature lower than that of polystyrene, in order to avoid irreversible deformation, a coolant is required to cool the material and the material is treated by partial immersion. Specifically, the coolant can be deionized water, and the temperature of the coolant can be 25°C to 35°C.

[0036] Furthermore, in step (3), during the plasma etching process, the etching time is 90-150 seconds, the gas flow rate is 60-90 sccm, and the etching power is 50-150 W. Preferably, oxygen is used as the etching gas, whereby too long an etching time or too high a gas flow rate may cause surface denaturation, and vice versa, may affect the etching effect.

[0037] When the heating temperature increases or the heating time is prolonged, the collapse of the PS microspheres will be more significant, and the height of the cone monomers prepared subsequently will decrease; when the etching gas flow and power increase, the reaction process between the cone and oxygen plasma will be more intense and the changes will be more significant, which will simultaneously cause the height of the cone monomers to decrease and the spacing between the cones to increase.

[0038] In a third aspect, the present invention provides an application of the surface cone array-controlled scintillator device in a radiation detector.

[0039] Compared with the prior art, the present invention has the following advantages:

[0040] 1) Reduction of luminescence time dispersion: The surface cone array can effectively improve the first light extraction efficiency of the scintillator and reduce the luminescence time dispersion, thereby improving the time resolution of the scintillation detector.

[0041] 2) Significant improvement in light output: The surface cone array can effectively increase the light output of the scintillator, thereby improving the detection efficiency of the scintillation detector.

[0042] 3) Array parameters are adjustable: Parameters such as the period, monomer height and gap of the surface cone array can be strictly controlled by changing the heating temperature and time as well as the etching gas flow and power.

[0043] 4) Effective cooling: In the heating step, the surface microsphere scintillator is partially immersed in a coolant to cool it down and then heated by passing a high-temperature airflow. This can effectively reduce the temperature of the scintillator, making it less likely to be deformed by heat, and ensure that the high-temperature airflow reacts with the surface microsphere array.

[0044] 5) Economical and practical: This method can achieve large-scale preparation, is low-cost and easy to promote. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] Figure 1 Schematic diagram of the surface cone array scintillator structure.

[0046] Figure 2 Schematic diagram of the method for partial immersion heating of a device in Example 1.

[0047] Figure 3 This is a scanning electron microscope image of the surface structure of the scintillator device controlled by the surface cone array prepared in Example 1.

[0048] Figure 4 This is the result of the first light extraction efficiency simulation for the surface cone array in Example 1.

[0049] Figure 5 This is a graph showing how the luminescence enhancement ratio of the scintillator device controlled by the surface cone array under excitation of a 254nm ultraviolet light source in Example 1 varies with the luminescence wavelength compared to the reference sample device with no surface structure.

[0050] Figure 6 This is the consistent time resolution result of the scintillator device controlled by the surface cone array and the reference sample device with no surface structure measured under Na-22 source excitation in Example 2.

[0051] Figure 7 This is the light extraction efficiency result of the scintillator device obtained in Comparative Example 1.

[0052] Figure 8 It is a light output enhancement data diagram of the scintillator devices of Example 1 and Comparative Examples 1 to 3. DETAILED DESCRIPTION

[0053] The present invention is described in detail below in conjunction with the accompanying drawings and specific embodiments. This embodiment is implemented based on the technical solution of the present invention, and provides a detailed implementation method and specific operation process, but the protection scope of the present invention is not limited to the following embodiments.

[0054] In the following examples, the polystyrene microsphere solution is a commercially available product, specifically monodisperse polystyrene microspheres from Zhongke Leiming, item number PS000200; the plastic scintillator based on PVT material is a standard product purchased from ELJEN, specifically model EJ-232. The (Lu,Y)2SiO5:Ce bulk scintillator is a standard product purchased from Shanghai Shuojie Crystal Materials Co., Ltd.

[0055] The rest of the raw materials or processing techniques, unless otherwise specified, are conventional commercially available raw materials or conventional processing techniques in the art.

[0056] Embodiment 1:

[0057] The scintillator used in this embodiment is a plastic scintillator based on PVT material, with a size of Φ42mm×3mm and a glass transition temperature of about 70°C, which is lower than the glass transition temperature of polystyrene microspheres. The cone array period on its surface is 500nm, the unit height is 150nm, and the gap between units is 50nm. The structural diagram of the sample is shown in the figure. Figure 1 As shown, the mark 1 in the figure is the conical array of the light emitting surface, and 2 is the scintillator.

[0058] The device preparation process is as follows:

[0059] 1) Select scintillator for cutting, polishing and cleaning;

[0060] 2) Prepare a 5% sodium dodecyl methyl sulfate aqueous solution, place a 1 mm thick silicon wafer in the solution to maintain surface polarity for 12 hours;

[0061] 3) Mix a 500 nm diameter polystyrene microsphere suspension with a concentration of 50 mg / ml, deionized water, and anhydrous ethanol in a volume ratio of 1:1:2, and mix the suspension evenly with an ultrasonic mixer;

[0062] 4) Drop 15 μL of the prepared polystyrene microsphere suspension onto the cleaned and dried silicon wafer, and wait for it to fully diffuse on the silicon wafer and for the water and ethanol to completely evaporate;

[0063] 5) Place the silicon wafer with the surface dripped and volatilized slowly into deionized water at an angle of 30° to the water surface, so that the microsphere array is separated from the silicon wafer and floats on the deionized water surface. Use a plastic scintillator with a clean surface to slowly approach the water surface from the water and fit it to the microsphere array, so that the microsphere array is completely attached to the surface of the scintillator;

[0064] 6) Transfer the scintillator with the polystyrene microsphere array on its surface to a high-temperature oven and place it in a container with an insulating gasket with the light-emitting surface facing upward. Make a scale mark on the container wall slightly below the light-emitting surface of the scintillator (0.05 mm). Add deionized water at a temperature of 25°C to the container until the deionized water level reaches the liquid level mark;

[0065] 7) Adjust the oven temperature to 95°C. Add deionized water to the container at regular intervals during the heating process until the liquid level reaches the mark. Heating continues for 20 minutes;

[0066] 8) After heating, cool the container to room temperature, take the device out of the coolant, and dry it;

[0067] 9) Etching was performed using an inductively coupled plasma etching system (oxygen ion etching) of model DISC-ICP-601, with an operating temperature of 30° C., a gas flow rate of 90 sccm, and an etching time of 90 seconds;

[0068] In the above preparation process, the detailed schematic diagram of preparation steps 5, 6, and 7 is as follows Figure 2 As shown. Figure 2 In the figure, the numbers are: high temperature air flow 3 introduced into the high temperature oven, surface microsphere array 4, deionized water 5, container 6, and thermal insulation gasket 7.

[0069] The SEM image of the surface cone array is shown in Figure 3 As shown, Figure 3 (a) is a top view of the surface cone array under scanning electron microscope. Figure 3 (b) is a side view of the surface conical structure under a scanning electron microscope. The electron microscope image shows that the structure obtained in this example meets the design requirements.

[0070] Figure 5The data shows the wavelength distribution of the luminescence enhancement ratio of the surface cone array scintillator compared with the reference sample without any surface structure under 254nm ultraviolet light excitation, with a wavelength range of 400nm-600nm. It can be seen from the figure that the light output enhancement of the surface cone structure sample in this embodiment can reach up to 157.3% at 575nm, and the overall spectrum integral enhancement is about 131.5%.

[0071] Figure 4 The results of the first light extraction efficiency simulation for the surface cone array of this implementation case are shown, where the horizontal axis is the incident angle of parallel light and the vertical axis is the light transmittance corresponding to the angle. It can be seen from the figure that the transmittance of the reference sample without any structure on the surface rapidly decays to 0 when the light incident angle reaches the total reflection angle (40.1°), while the surface cone array still has transmission outside the total reflection angle, and the incident angle distribution integral result of the single transmittance is improved by 9.8% compared with the reference sample.

[0072] In summary, the surface tapered structure of this example has significant results in increasing the light extraction efficiency and the first light extraction efficiency of the plastic scintillator.

[0073] Embodiment 2:

[0074] The scintillator used in this embodiment is a (Lu,Y)2SiO5:Ce block scintillator with a size of 20×10×8mm3. The melting point of inorganic scintillator crystals is much higher than the glass transition temperature of polystyrene, so the heating temperature can be increased to 115°C during heating to shorten the heating time. Considering that the boiling point of deionized water is 100°C, the coolant in this example is replaced with a 1:1 mixture of ethylene glycol and water (boiling point is about 200°C). The cone array period on its surface is 400nm, the unit height is 110nm, and the gap between units is 80nm.

[0075] The device preparation process is as follows:

[0076] 1) Select scintillator for cutting, polishing and cleaning;

[0077] 2) Prepare a 5% sodium dodecyl methyl sulfate aqueous solution, place a 1 mm thick silicon wafer in the solution to maintain surface polarity for 12 hours;

[0078] 3) Take a 50 mg / ml polystyrene microsphere suspension with a diameter of 400 nm and anhydrous ethanol in a ratio of 1:2, and mix the suspension evenly with an ultrasonic mixer;

[0079] 4) Drop 15 μL of the prepared polystyrene microsphere suspension onto the cleaned and dried silicon wafer, and wait for it to fully diffuse on the silicon wafer and for the water and ethanol to completely evaporate;

[0080] 5) Place the silicon wafer with the surface dripped and volatilized slowly into deionized water at an angle of 30° to the water surface, so that the microsphere array is separated from the silicon wafer and floats on the deionized water surface. Use a scintillator with a clean surface to slowly approach the water surface from the water and fit it to the microsphere array, so that the microsphere array is completely attached to the surface of the scintillator;

[0081] 6) Transfer the scintillator with the polystyrene microsphere array on the surface to a high-temperature oven and place it in a container with an insulating gasket with the light-emitting surface facing upward. Mark the container wall slightly below the light-emitting surface of the scintillator (0.05 mm). Add a 1:1 mixture of ethylene glycol and water to the container until the coolant level reaches the mark;

[0082] 7) Adjust the temperature of the high temperature oven and set the heating temperature to 115°C. During the heating process, add coolant to the container at regular intervals until the liquid level reaches the mark. Heating continues for 10 minutes;

[0083] 8) After heating, cool the container to room temperature, remove it from the coolant, and dry it;

[0084] 9) The etching was performed using an inductively coupled plasma etching system (oxygen ion etching) of model DISC-ICP-601, with an operating temperature of 30° C., a gas flow rate of 90 sccm, an etching time of 120 seconds, and an etching power of 60 W.

[0085] Figure 6 The coincidence time resolution (CTR) result of the device in this embodiment of the invention measured by the PETSYS TOFPET2 instrument for the Na-22 source, wherein the ordinate is the normalized photon count and the total integral value of the image is 1. It can be seen from the figure that the coincidence time resolution of the scintillator with a surface conical structure is improved by 18.7% compared with the reference sample scintillator without any structure on the surface. Therefore, it also shows that the surface conical structure of this embodiment has a significant inhibitory effect on the time dispersion effect of the scintillator luminescence.

[0086] Comparative Example 1:

[0087] Compared with Example 1, most of them are the same, except that the shape of the polystyrene array is changed from a conical array to a hemispherical array, and the other parameters of height, period and gap remain the same.

[0088] like Figure 7 , which is the result of the simulated first light extraction efficiency, wherein the first light extraction efficiency of the nanocone array is increased by 10.3% compared with the nanohemisphere array.

[0089] Figure 8The wavelength distribution of the luminescence enhancement ratio of the surface cone array scintillator and the surface hemispherical array scintillator compared with the reference sample without any surface structure under 254nm ultraviolet light excitation in the wavelength range of 400nm-600nm. The test data of the surface cone array scintillator is Figure 5 The solid line shows the test data of the surface hemispherical array scintillator. Figure 5 From the figure, it can be seen that the light output enhancement of the surface cone structure sample in this embodiment can reach 2.54 times of the hemispherical array at 575nm, and the full spectrum integrated intensity is 2.16 times of the hemispherical array, so it is more advantageous to choose a cone array.

[0090] Comparative Example 2:

[0091] Compared with Example 1, most of the above are the same, except that the height of the polystyrene nanocones is controlled to be 300 nm. Under the same test conditions as in Example 1, the spectral enhancement ratio is Figure 8 shown.

[0092] It can be seen from the figure that although the enhancement near 575nm in this comparative example 2 is close to the result of the conical array with a height of 150nm, the enhancement of the full spectrum integration is only 65.2% of that of the conical array in Example 1.

[0093] Comparative Example 3:

[0094] Compared with Example 1, most of them are the same, except that the period of the polystyrene nanocones is controlled to be 600nm. Under the same test conditions as in Example 1, the spectrum enhancement ratio results are as follows: Figure 8 shown.

[0095] It can be seen from the figure that due to the larger period, the overall improvement effect of comparative case 3 is not as good as the result with a period of 500nm, and the enhancement of the full spectrum integration is only 53.7% of that of the conical array in Example 1.

[0096] The above description of the embodiments is to facilitate the understanding and use of the invention by those skilled in the art. It is obvious that those skilled in the art can easily make various modifications to these embodiments and apply the general principles described herein to other embodiments without creative work. Therefore, the present invention is not limited to the above embodiments, and improvements and modifications made by those skilled in the art based on the disclosure of the present invention without departing from the scope of the present invention should be within the scope of protection of the present invention.

Claims

1. A scintillator device regulated by a surface cone array, characterized in that: include: Scintillator; And a cone array covering the light-emitting surface of the scintillator, wherein the cone array is composed of a plurality of polystyrene nano cones arranged in a periodic hexagonal close-packed structure.

2. The scintillator device controlled by a surface cone array according to claim 1, characterized in that: The height of each polystyrene nanocone is 100-200nm, the taper is 2-4.5, and the interval between two adjacent polystyrene nanocones is 50-100nm.

3. The scintillator device controlled by a surface cone array according to claim 1, characterized in that: The period of the cone array is 300-600 nm.

4. The scintillator device controlled by a surface cone array according to claim 1, characterized in that: The period of the conical array is 0.5λ~λ, where λ is the central wavelength of the scintillator light.

5. The scintillator device controlled by a surface cone array according to claim 1, characterized in that: The scintillator is a plastic scintillator or an inorganic scintillator.

6. The scintillator device controlled by a surface cone array according to claim 5, characterized in that: The plastic scintillator includes a plastic scintillator with polyvinyltoluene, polymethyl methacrylate or polystyrene as a matrix; The inorganic scintillator is glass scintillator, (Lu, Y) 2 SiO 5: Ce, Bi 4 Ge 3 O 12 、ZnO:Ga、Y3Al5O 12 :Ce, Gd3Al2Ga3O 12 :Ce, CsI:Tl, NaI:Tl, BaF2 or PbWO4.

7. The method for preparing a scintillator device controlled by a surface cone array according to any one of claims 1 to 6, characterized in that: The following steps are involved: (1) Forming a polystyrene microsphere array with a periodic hexagonal close-packed structure on the light-emitting surface of the scintillator by a microsphere self-assembly method; (2) immersing part of the sample obtained in step (1) in a cooling liquid and placing it in an oven for heating to prepare a sample with a hemispherical array structure; (3) The sample of the hemispherical array structure obtained in step (2) is subjected to plasma etching to generate a polystyrene cone array. The process is completed.

8. The method for preparing a scintillator device controlled by a surface cone array according to claim 7, characterized in that: The process of forming a polystyrene microsphere array with a periodic hexagonal close-packed structure by the microsphere self-assembly method is as follows: First, prepare a 4-6% mass fraction of sodium dodecyl methyl sulfate aqueous solution, and place the silicon wafer in the solution for 8-16 hours; Then, a polystyrene microsphere suspension having a concentration of 40-60 mg / mL and a diameter of 400-600 nm, deionized water, and anhydrous ethanol are mixed in a volume ratio of 1: (0.5-1.5): (1.5-2.5), and ultrasonically mixed to obtain a polystyrene microsphere mixed solution; Next, the polystyrene microsphere mixture is dripped onto the treated, cleaned and dried silicon wafer, and waited for it to fully diffuse and the water and ethanol to completely evaporate; Continue to tilt the silicon wafer after the water and ethanol have evaporated completely and place it into deionized water to separate the silicon wafer from the polystyrene microsphere array attached to the surface; Finally, the scintillator with a clean surface is brought close to the water surface in deionized water and fits onto the floating polystyrene microsphere array, so that the polystyrene microsphere array is completely attached to the light-emitting surface of the scintillator.

9. The method for preparing a scintillator device controlled by a surface cone array according to claim 7, characterized in that: In step (2), the sample obtained in step (1) is placed in a cooling liquid with the light emitting surface facing upward, and the immersion depth satisfies: the liquid level of the cooling liquid is lower than the light emitting surface of the scintillator; The heating temperature is 95 to 115° C., the heating time is 10 to 20 minutes, and the surface of the coolant is kept to always immerse at least a part of the scintillator during the heating process; In step (3), during the plasma etching process, the etching time is 90-150 seconds, the gas flow rate is 60-90 sccm, and the etching power is 50-150W.

10. Application of the scintillator device controlled by the surface cone array according to any one of claims 1 to 6 in a radiation detector.

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