Neutral beam active source device

Abstract

The invention relates to the technical field of vacuum equipment, and discloses a neutral beam active source device which comprises an electromagnetic field generator, a plasma generation cavity and a neutralizer. And the electromagnetic field generator is used for generating an electromagnetic field after being electrified. And the plasma generation cavity is coupled with the electromagnetic field generator and used for containing working gas and plasma generated by the working gas under the action of the electromagnetic field, and the plasma generation cavity comprises a plasma outlet. The neutralizer is arranged at the far end of the plasma outlet of the plasma generation cavity and comprises a plurality of through holes used for enabling plasma to pass through and forming neutral particle beams.

Description

Technical Field

[0001] The present disclosure relates to the technical field of vacuum equipment, and in particular to a neutral beam active source device. Background Art

[0002] Neutral particles, such as those with kinetic energy, can be used in fields such as plasma etching to reduce substrate damage during the etching process. However, current neutral particle generators are primarily developed for a single purpose and have a narrow range of applications. Summary of the Invention

[0003] The present disclosure provides a neutral beam active source device, comprising:

[0004] An electromagnetic field generator, used for generating an electromagnetic field after being energized;

[0005] a plasma generating chamber coupled to the electromagnetic field generator and configured to contain the working gas and plasma generated by the working gas under the action of the electromagnetic field, the plasma generating chamber including a plasma outlet; and

[0006] The neutralizer is arranged at the far end of the plasma outlet of the plasma generating chamber. The neutralizer comprises a plurality of through holes for allowing the plasma to pass through and form a neutral particle beam.

[0007] The present disclosure also provides a vacuum system, comprising:

[0008] vacuum chamber; and

[0009] According to the neutral particle beam device in any one of the embodiments of the present disclosure, the neutral beam active source device is at least partially disposed in the vacuum chamber, for emitting a neutral particle beam into the vacuum chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only one embodiment of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0011] Figure 1 A schematic structural diagram of a neutral beam active source device according to some embodiments of the present disclosure is shown;

[0012] Figure 2A A partial structural schematic diagram of a neutral beam active source device according to some embodiments of the present disclosure is shown;

[0013] Figure 2B Show Figure 2A AA cross-section of

[0014] Figure 3A A schematic structural diagram of a neutral beam active source device according to other embodiments of the present disclosure is shown;

[0015] Figure 3B Show Figure 3A DD profile;

[0016] Figure 4 A partial structural schematic diagram of an electromagnetic field generator according to some embodiments of the present disclosure is shown;

[0017] Figure 5 An enlarged view of a portion of the structure of an electromagnetic field generator according to some embodiments of the present disclosure is shown;

[0018] Figure 6 According to some embodiments of the present disclosure Figure 2B A magnified schematic diagram of part A;

[0019] Figure 7 Showing some embodiments of the present disclosure Figure 2B A magnified schematic diagram of part B;

[0020] Figure 8 A schematic cross-sectional view of a flow restrictor tube according to some embodiments of the present disclosure is shown;

[0021] Figure 9 A schematic structural diagram of a shunt tube according to some embodiments of the present disclosure is shown;

[0022] Figure 10A According to some embodiments of the present disclosure Figure 2B An enlarged schematic diagram of part A from another angle;

[0023] Figure 10B According to some embodiments of the present disclosure Figure 2B An enlarged schematic diagram of part A from another angle;

[0024] Figure 11 Showing some embodiments of the present disclosure Figure 2B An enlarged schematic diagram of part B from another angle;

[0025] Figure 12 A schematic cross-sectional view of a separator block according to some embodiments of the present disclosure is shown;

[0026] Figure 13 A partial cross-sectional schematic diagram illustrating a neutral beam active source device according to some embodiments of the present disclosure;

[0027] Figure 14 A schematic diagram illustrating a sealing structure in which the outer side surface of a sealing ring according to some embodiments of the present disclosure may include a tapered surface;

[0028] Figure 15 A schematic diagram of a sealing structure is shown in which the outer side surface of the sealing ring according to some embodiments of the present disclosure may include a curved surface.

[0029] Figure 16 A schematic structural diagram showing the position arrangement of a magnet fixing mechanism according to some embodiments of the present disclosure;

[0030] Figure 17A A schematic structural diagram of a magnetic field confinement mechanism according to some embodiments of the present disclosure is shown;

[0031] Figure 17B Show Figure 17A BB cross-section diagram;

[0032] Figure 18A A partial structural schematic diagram of a neutral beam active source device according to some other embodiments of the present disclosure is shown;

[0033] Figure 18B Show Figure 18A CC cross-section diagram;

[0034] Figure 19 A schematic diagram showing the three-dimensional structure of a neutral beam active source device according to some embodiments of the present disclosure is shown;

[0035] Figure 20A -C shows the geometric arrangement diagram of the magnets during simulation according to some embodiments of the present disclosure, wherein Figure 20A shows the xy plane arrangement of the magnets; Figure 20B shows the xz plane arrangement diagram of the magnet; Figure 20C shows a three-dimensional arrangement of magnets;

[0036] Figure 21A -C shows the multi-section magnetic field spatial distribution obtained after magnet simulation according to some embodiments of the present disclosure, wherein Figure 21A The spatial distribution of the magnetic field in multiple slices of the xy plane is shown; Figure 21B The spatial distribution of the magnetic field in multiple slices of the xz plane is shown; Figure 21C The three-dimensional multi-section magnetic field spatial distribution is shown;

[0037] Figure 22A -C shows the spatial distribution of the surface magnetic field obtained after the magnet simulation according to some embodiments of the present disclosure, wherein Figure 22A shows the spatial distribution of the surface magnetic field in the xy plane; Figure 22B The spatial distribution of the surface magnetic field in the xz plane is shown; Figure 22C shows the spatial distribution of the surface magnetic field in the yz plane;

[0038] Figure 23A -C shows the line result diagram obtained after the magnet simulation according to some embodiments of the present disclosure, wherein Figure 23A A line result graph is shown with the x-axis; Figure 23B A line result graph showing the y-axis; Figure 23C A line result graph of the z-axis is shown;

[0039] Figure 24 The figure shows the change of charged particle beam current before and after the neutralizer is installed in the neutral beam active source device according to some embodiments of the present disclosure;

[0040] Figure 25 shows a schematic structural diagram of a vacuum system according to some embodiments of the present disclosure;

[0041] Figure 26A shows the (002) plane rocking curves of GaN films epitaxially grown at different temperatures;

[0042] Figure 26B shows a scanning electron microscopy cross-sectional image of a GaN film epitaxially grown at 350°C;

[0043] In the above drawings, the reference numerals represent:

[0044] 1000-Vacuum system, 100, 100a-Neutral beam active source device

[0045] 10, 10a - electromagnetic field generator, 11, 11a - RF power supply, 12 - conduction line, 121 - feed line, 1211 - feed end, 122, 122a - inductor coil, 123 - ground line, 13 - electrode feedthrough, 14 - first connector, 15 - support block, 16 - signal shielding cover, 18, 18a - limit block, 19, 19a - shielding shell

[0046] 20, 20a-plasma generating chamber, 21, 21a-chamber, 22, 22a-contraction section, 23 limiting assembly, 231 first limiting member, 232 second limiting member

[0047] 30, 30a - Gas introduction assembly, 31, 31a - Outer tube, 311 - Proximal end, 32 - Separator, 321 - First connecting channel, 322 - Second connecting channel, 33 - Inner air intake tube, 331 - Main body, 332 - Expansion section, 34 - Flow restrictor, 341 - First gas channel, 342 - Second gas channel, 35 - Diverter tube, 351, 351a, 351b, 351c, 351d - Diverter hole

[0048] 40, 40a - cooling device, 41, 41a - liquid inlet, 42 - first connecting pipe, 43 - second connecting pipe, 44 -, 44a - liquid outlet, 45 - third connecting pipe, 46 - fourth connecting pipe, 50, 50a - supporting mechanism, 51, 51a - supporting flange, 52 - straight flange

[0049] 60, 60a-neutralizer, 61-through hole, 62-main body

[0050] 70, 70a-seal assembly, 71-seal ring, 72-seal nut

[0051] 80-electrode

[0052] 90-magnetic field constraint mechanism, 91-magnet, 91a, 91b-magnet group, 911a-first row of magnets, 911b-second row of magnets, 911c-third row of magnets, 92-magnet cooling mechanism, 921-magnet inner cooling pipe, 922-magnet outer cooling pipe, 923-liquid inlet pipe, 924-liquid outlet pipe, 925-magnet inner liquid outlet pipe, 926-magnet cooling channel, 93-flange, 94-magnet fixing mechanism, 941-fixing ring, 942-support part

[0053] 200-vacuum chamber, 300-sample, 400-metal source DETAILED DESCRIPTION

[0054] Some embodiments of the present disclosure will be described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only exemplary embodiments of the present disclosure, rather than all embodiments.

[0055] In the description of the present disclosure, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", "top", "bottom", "horizontal", "longitudinal" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present disclosure. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance. In the description of the present disclosure, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected" and "coupled" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be the internal connection of two elements. In the description of the present disclosure, the distal end or distal side refers to the end or side that extends into a vacuum environment (e.g., a vacuum chamber), and the proximal end or proximal side refers to the end or side opposite to the distal end or distal side (e.g., the end or side away from the vacuum chamber, or the end or side within the vacuum chamber close to the vacuum chamber wall, etc.). Alternatively, the end or side close to the driving device is the proximal end or proximal side, and the end or side away from the driving device is the distal end or distal side. For those of ordinary skill in the art, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0056] Figure 1 A schematic structural diagram of a neutral beam active source device 100 according to some embodiments of the present disclosure is shown. Figure 2A A partial structural schematic diagram of a neutral beam active source device 100 according to some embodiments of the present disclosure is shown. Figure 2B Show Figure 2A AA cross-section diagram. Figure 7 Showing some embodiments of the present disclosure Figure 2B Enlarged diagram of part B

[0057] like Figure 1 、 Figure 2A and Figure 2B As shown, in some embodiments of the present disclosure, the neutral beam active source device 100 may include an electromagnetic field generator 10, a plasma generating chamber 20, and a neutralizer 60. The electromagnetic field generator 10 can be used to generate an electromagnetic field after being energized. The plasma generating chamber 20 is coupled to the electromagnetic field generator 10 and can be used to accommodate the working gas and the plasma generated by the working gas under the action of the electromagnetic field. The plasma generating chamber 20 may include a plasma outlet. The neutralizer 60 is disposed at the distal end of the plasma outlet of the plasma generating chamber 20. Figure 2B and Figure 7 As shown, the neutralizer 60 may include a plurality of through holes 61. The plurality of through holes 61 are used to allow plasma to pass through and form a neutral particle beam.

[0058] In some embodiments of the present disclosure, electrons within the plasma generating chamber 20 undergo cyclotron motion under the influence of an electromagnetic field, increasing the probability of collision with gas molecules and the efficiency of gas ionization, thereby generating a high-density plasma. In some embodiments of the present disclosure, the neutralizer 60 may be grounded. Plasma exiting the plasma outlet of the plasma generating chamber 20 passes through the grounded neutralizer 60 and is converted into neutral particles. Grounding the neutralizer 60 facilitates charge neutralization and exchange within the plasma.

[0059] In other embodiments of the present disclosure, the neutralizer 60 can be biased. Plasma exiting the plasma outlet of the plasma generating chamber 20 passes through the biased neutralizer 60 and is converted into neutral particles. Biasing the neutralizer 60 controls the plasma screening and acceleration process, improving neutralization efficiency.

[0060] In some embodiments of the present disclosure, the kinetic energy of the neutral particles can be regulated by regulating the gas flow rate of the working gas. For example, the kinetic energy of the neutral particles can be adjusted between 0eV and 30eV (inclusive), for example, neutral particles with kinetic energy of 0.5eV-30eV, 0.5eV-20eV, etc., so as to meet the needs of epitaxial growth. And the neutral particles obtained by the plasma source in some embodiments of the present disclosure are more reactive. For example, the nitrogen atoms generated by the neutral beam active source device in some embodiments of the present disclosure can fully nitride a single crystal metal film such as a single crystal metal gallium (Ga) film or a single crystal metal aluminum (Al) film attached to a substrate, and obtain a single crystal gallium nitride layer or a single crystal aluminum nitride layer by epitaxial growth.

[0061] like Figure 2B As shown, in some embodiments of the present disclosure, the neutral beam active source device 100 may further include an electrode bias power supply (not shown) and an electrode 80. The electrode 80 is connected to the electrode bias power supply. The electrode 80 is disposed inside the proximal end of the plasma generating chamber 20 and is used to guide charged particles in the plasma toward the neutralizer 60.

[0062] In some embodiments of the present disclosure, the electrode 80, connected to an electrode bias power supply, can be used to accelerate charged particles, thereby increasing the kinetic energy of the neutral particles obtained from the neutralizer 60. For example, neutral particles with kinetic energies of any value or range between 0 eV and 2000 eV (inclusive) can be obtained, including neutral particles with kinetic energies of 10 eV to 30 eV, 20 eV to 1000 eV, 50 eV to 200 eV, 200 eV to 2000 eV, etc. The neutral particles obtained according to some embodiments of the present disclosure can be used for epitaxial growth, etching, and cleaning of substrates.

[0063] In some embodiments of the present disclosure, the kinetic energy of the neutral particles can also be regulated by regulating the output power of the electrode bias power supply.

[0064] In some embodiments of the present disclosure, Figure 2B and Figure 7 As shown, the neutralizer 60 may include a plate-shaped body 62, with a plurality of through holes 61 formed on the body 62. The body 62 may be made of any suitable material, such as metal, carbon, etc. Figure 2B and Figure 7 As shown, in some embodiments of the present disclosure, the ratio of the depth to width of the through hole 61 is between 2:1 and 20:1. The depth is the length of the through hole 61 along the direction of the plasma outlet. In some embodiments, the through hole 61 is designed as a long hole, which can extend the path of the plasma in the neutralizer 60, thereby improving the neutralization efficiency. Figure 2B and Figure 7Although the through hole 61 is shown as a straight hole, this is only exemplary, and the through hole 61 may also be designed as an oblique hole.

[0065] In some embodiments of the present disclosure, during operation, plasma generated by plasma generating chamber 20 passes through through-hole 61, strikes the inner surface of through-hole 61 at a grazing angle, and is converted into neutral particles. Neutral particle beams can be used to mitigate charging damage in processes such as epitaxial growth, etching, and cleaning, and can be widely used in various production and experimental applications, such as microelectronic device manufacturing.

[0066] Figure 24 The figure shows the changes in the charged particle beam current before and after the neutral beam active source device 100 is equipped with a neutralizer according to some embodiments of the present disclosure.

[0067] like Figure 24 As shown, after the neutralizer 60 is installed, the charged particle flow (ion flow and electron flow) passing through the neutralizer 60 is substantially zero.

[0068] Figure 3A Schematic diagrams of the structure of a neutral beam active source device 100a according to other embodiments of the present disclosure are shown. Figure 3B Show Figure 3A DD cross-section diagram.

[0069] Such as 3A and Figure 3B As shown, the neutral beam active source device 100a can include an electromagnetic field generator 10a, a magnetic field confinement mechanism 90, and a plasma generating chamber 20a. The electromagnetic field generator 10a can be used to generate an electromagnetic field when energized, the magnetic field confinement mechanism 90 is used to generate a confining magnetic field, and the plasma generating chamber 20a is coupled to the electromagnetic field generator 10a and the magnetic field confinement mechanism 90, and can be used to accommodate a working gas and plasma generated by the working gas under the action of the electromagnetic field and the confining magnetic field.

[0070] Figure 4 A partial structural schematic diagram of an electromagnetic field generator 10 according to some embodiments of the present disclosure is shown.

[0071] like Figures 1-4As shown, in some embodiments of the present disclosure, the electromagnetic field generator 10 may include a conductive line 12. In some embodiments, the electromagnetic field generator 10 may further include a radio frequency power supply 11. Those skilled in the art will appreciate that the electromagnetic field generator 10 may not include the radio frequency power supply 11, but may be separated from the radio frequency power supply 11 and connected to an external radio frequency power supply 11 during use. In some embodiments of the present disclosure, the kinetic energy of the neutral particles can also be regulated by adjusting the output power of the radio frequency power supply 11. For example, neutral particles with kinetic energy of any point value or range between 0eV and 2000eV can be regulated, including neutral particles with kinetic energy of 10eV-30eV, 20eV-1000eV, 50eV-200eV, 200eV-2000eV, etc.

[0072] like Figures 1-4 As shown, the conductive line 12 may include a feed line 121, an inductor 122 and a ground line 123. The feed line 121 may be used to connect to the RF power supply 11. The inductor 122 is connected to the feed line 121 and is wound around the plasma generating chamber 20, and can be used to generate an electromagnetic field. The ground line 123 is connected to the inductor 122 and can be used for grounding. The RF power supply 11 is electrically connected to the conductive line 12, and transmits RF current to the conductive line 12, such as a RF current with a relatively low frequency (for example, 13.56 MHz), so that the inductor 122 generates an alternating magnetic field. As the RF current continues to be transmitted, the alternating magnetic field of the inductor 122 will excite an induced electric field in the space around it, which can produce a cyclotron acceleration effect on the electrons in the plasma generating chamber 20 surrounding it, thereby increasing the probability of collision with gas molecules and increasing the ionization efficiency of gas molecules, thereby generating a higher density plasma. In addition, in some embodiments, the working gas is decomposed into plasma by radio frequency inductive coupling. After the plasma passes through the neutralizer 60, it provides a highly active neutral particle source, which can meet the epitaxial growth of samples such as substrates, effectively reduce the temperature of epitaxial growth of the substrate, and obtain high-quality epitaxial films.

[0073] Those skilled in the art will understand that although an RF current with a frequency of 13.56 MHz is selected in some embodiments of the present disclosure, this is merely exemplary. In other embodiments of the present disclosure, an RF current with a frequency of 27.12 MHz or other suitable frequencies may be used to pass through the inductor coil to generate an electromagnetic field. Figure 5 A partial enlarged view of the structure of the electromagnetic field generator 10 according to some embodiments of the present disclosure is shown.

[0074] like Figure 5As shown, in some embodiments of the present disclosure, the electromagnetic field generator 10 may further include an electrode feedthrough 13, a first connector 14 and a second connector (not shown in the figure). The electrode feedthrough 13 connects the feed line 121 to the RF power supply 11, and the first connector 14 is arranged between the feed line 121 and the electrode feedthrough 13, and can be used to connect the feed line 121 and the electrode feedthrough 13. The first connector 14 is "L"-shaped, and the feed end 1211 of the feed line 121 is fitted with the short side of the first connector 14, and abuts against the long side of the first connector 14 to form a conductive path. The distal end of the electrode feedthrough 13 is connected to the long side of the first connector 14 by bolts, and the RF current generated by the RF power supply 11 can be introduced into the feed line 121 through the first connector 14, and the electrode feedthrough 13 and the feed line 121 are detachably connected by bolts, which is convenient for maintenance and replacement. The second connector is arranged between the electrode feedthrough 13 and the RF power supply 11, and can be used to connect the electrode feedthrough 13 and the RF power supply 11. One end of the second connector is connected to the proximal end of the electrode feedthrough 13, and the other end is connected to the RF power supply 11 through a bolt, and can be used to introduce the RF current generated by the RF power supply 11 into the feed line 121. In some embodiments, the electrode feedthrough 13 can pass through the support flange (e.g. Figure 1 and Figure 2B The supporting flange 51, Figure 3A The support flange 51a) shown enables electrical feeding between the vacuum environment and the outside world.

[0075] Those skilled in the art will understand that although in some embodiments of the present disclosure, the first connecting member 14 is "L"-shaped, this is merely exemplary, and the first connecting member 14 may also be in other suitable shapes, such as "I" shape, "S" shape, or straight shape.

[0076] like Figure 4 and Figure 5 As shown, in some embodiments of the present disclosure, the conductive line 12 may include a first conductive line and a second conductive line. The first conductive line and the second conductive line are connected at the feed end 1211 of the feed line 121 (for example, forming a U-shaped connection structure), and form a double winding structure at the inductor 122. The first conductive line and the second conductive line are wound to form the feed line 121, the inductor 122, and the ground line 123, which are connected in sequence. To avoid confusion, the first conductive line and the second conductive line are no longer separately marked in the figure.

[0077] like Figure 4 As shown, in some embodiments of the present disclosure, the electromagnetic field generator 10 may further include a protective member, which may be, for example, at least one insulating ceramic tube. The insulating ceramic tube may be sleeved over the feed line 121 and the ground line 123 for insulation. The insulating ceramic tube may be composed of multiple small ceramic tubes to facilitate direction adjustment, or may be composed of a single ceramic tube.

[0078] Those skilled in the art will appreciate that in other embodiments, the electromagnetic field generator 10a may have Figure 4 、 Figure 5 The same or similar structure of the electromagnetic field generator 10 shown is not described again here.

[0079] like Figure 2A 、 Figure 2B 、 Figure 7 As shown, in some embodiments of the present disclosure, the plasma generating chamber 20 may include a chamber body 21 and a contraction section 22. Figure 3B As shown, the inductor coil 122 can be wound around the cavity 21 , and the induced electric field generated by the inductor coil 122 covers the cavity 21 , so that the working gas is ionized into plasma in the cavity 21 .

[0080] Those skilled in the art will appreciate that in other embodiments, the plasma generating chamber 20a may have the same Figure 2A 、 Figure 2B 、 Figure 7 The structure of the plasma generating chamber 20 shown is the same as or similar to that shown, and will not be described in detail here.

[0081] Figure 6 Showing some embodiments of the present disclosure Figure 2B An enlarged schematic diagram of part A.

[0082] like Figure 1 、 Figure 2B 、 Figure 4-Figure 7 As shown, in some embodiments of the present disclosure, the neutral beam active source device 100 may further include a gas introduction assembly 30. The gas introduction assembly 30 may include an outer tube 31, a partition block 32, and an inner air intake tube 33. The partition block 32 is sealedly connected to the outer tube 31 and is located at the proximal end of the outer tube 31, defining a proximal end portion 311 at the proximal end of the outer tube 31. The proximal end of the inner air intake tube 33 is sealedly inserted into the outer tube 31 through the partition block 32 and is connected to a gas source (not shown in the figure) through the proximal end portion 311, and can be used to introduce gas generated by the gas source. At the same time, the partition block 32 also forms a watertight state between the interior of the outer tube 31 and its proximal end portion 311, preventing the coolant surrounding the inner air intake tube 33 from seeping into the proximal end portion 311. The inner air intake tube 33 may include a main body 331 and an expansion section 332 located at the distal end. The expansion section 332 engages with the distal end of the outer tube 31 and can be used to input gas into the cavity 21. Those skilled in the art will appreciate that, although in some embodiments of the present disclosure, the outer tube 31 is divided into two sections and connected together by the separator 32, this is merely exemplary. The outer tube may also be integrally formed, with the separator disposed within the outer tube and defining a proximal end portion at the proximal end of the outer tube.

[0083] Those skilled in the art will understand that although in some embodiments of the present disclosure, the main body 331 and the expansion section 332 of the inner intake pipe 33 are divided into two sections and connected by processes such as welding, this is merely exemplary and the main body 331 and the expansion section 332 may also be formed as one piece.

[0084] Those skilled in the art will appreciate that in other embodiments, the neutral beam active source device 100a may have the same Figure 1 、 Figure 2B 、 Figure 4-Figure 7 The gas introduction assembly 30a having the same or similar structure as the illustrated gas introduction assembly 30 will not be described in detail here.

[0085] Figure 8 FIG. 4 is a schematic structural diagram of a flow restricting tube 34 according to some embodiments of the present disclosure.

[0086] like Figure 2A 、 Figure 2B 、 Figure 7 、 Figure 8 As shown, in some embodiments of the present disclosure, the gas introduction assembly 30 may further include a flow restricting tube 34. The flow restricting tube 34 is at least partially disposed within the expansion section 332, and its distal end extends into the contraction section 22 of the plasma generating chamber 20. The proximal outer diameter of the flow restricting tube 34 is greater than the inner diameter of the main body 331 of the inner air inlet tube 33, and the inner diameter of the flow restricting tube 34 is smaller than the inner diameter of the main body 331 of the inner air inlet tube 33. The flow restricting tube 34 may include a first gas channel 341 and a second gas channel 342, and the diameter of the first gas channel 341 may be greater than that of the second gas channel 342. The working gas flows from the first gas channel 341 through the second gas channel 342 and then enters the plasma generating chamber 20, which can limit the flow of the working gas so that the gas molecules are fully ionized and the ionization efficiency is improved.

[0087] Those skilled in the art will understand that Figure 3A As shown, in other embodiments, the gas introduction component 30a may also include a flow restriction tube 34 ( Figure 3A not shown).

[0088] Figure 9 FIG. 4 is a schematic structural diagram of a shunt tube 35 according to some embodiments of the present disclosure.

[0089] like Figure 2A 、 Figure 2B 、 Figure 7 、 Figure 9As shown, in some embodiments of the present disclosure, the gas introduction assembly 30 may further include a shunt tube 35. The shunt tube 35 is sleeved on the distal end of the flow restricting tube 34, with the proximal end extending into the expansion section 332 and the distal end extending into the contraction section 22. The distal end of the shunt tube 35 is provided with at least one shunt hole 351 (e.g., shunt hole 351a, shunt hole 351b, shunt hole 351c, shunt hole 351d), which can be used to divert the introduced working gas to increase the disorder between the gas molecules, fully ionize the gas molecules, and improve the ionization efficiency.

[0090] Those skilled in the art will understand that Figure 3A As shown, in other embodiments, the gas introduction component 30a may also include a diverter pipe 35 ( Figure 3A not shown).

[0091] Figure 10A Showing some embodiments of the present disclosure Figure 2B An enlarged schematic diagram of part A from another angle. Figure 10B Showing some embodiments of the present disclosure Figure 2B An enlarged schematic diagram of part A from another angle. Figure 11 Showing some embodiments of the present disclosure Figure 2B An enlarged schematic diagram of part B from another angle.

[0092] like Figures 1-11 As shown, the neutral beam active source device 100 may further include a cooling device 40. In other embodiments, the neutral beam active source device 100a may also include a cooling device 40. The cooling device 40 may include a liquid inlet 41 (the liquid inlet pipe is not shown), a first connecting pipe 42, a second connecting pipe 43, a liquid outlet 44 (the liquid outlet pipe is not shown), a third connecting pipe 45 and a fourth connecting pipe 46. The conductive circuit 12 may include a hollow first conductor and a second conductor, and the first conductor and the second conductor are connected at the feeding end of the feeding circuit. The liquid inlet 41 is connected to the first conductor through the third connecting pipe 45 at the proximal end of the grounding circuit 123, and can be used to introduce cooling liquid into the conductive circuit 12. The first connecting pipe 42 is connected to the second conductor at the proximal end of the grounding circuit 123, and is connected to the portion of the outer tube 31 located at the distal end of the partition block 32. The coolant enters the outer tube 31. The second connecting tube 43 extends along the outer tube 31 and is connected to the outer tube 31 at its distal end. When the coolant level in the outer tube 31 exceeds that of the second connecting tube 43, it can be discharged from the second connecting tube 43, ensuring that the coolant effectively cools the gas introduction assembly 30. The liquid outlet 44 is connected to the proximal end of the second connecting tube 43 via the fifth connecting tube 46 and can be used to discharge the coolant in the outer tube 31.

[0093] In the process of generating ions by means of radio frequency inductive coupling, the inductive coil usually generates high-temperature heat, which can easily bring destructive risks to the neutral beam active source device itself, so the inductive coil itself also needs to be cooled. In some embodiments of the present disclosure, the coolant passes through the hollow first and second conductors to cool the feed line 121, the inductive coil 122, and the grounding line 123, and then cools the gas introduction component 30. The coolant circulation route is long and the cooling is sufficient, which prevents the equipment from being damaged due to overheating and effectively extends the service life of the equipment. The cooling device 40 can cool the conductive line 12 and the gas introduction component, simplifying the cooling pipeline, reducing welding, reducing the risk of poor sealing at the weld and reducing the processing cost. In some embodiments of the present disclosure, low-frequency low-voltage alternating current is used, and even if the coolant is passed into the conductive line 12, no conductivity problem will occur. In addition, if Figure 4 As shown, the liquid inlet 41 and the liquid outlet 44 are both provided on the support flange 51 , and the pipeline hidden in the support flange 51 plays a role in cooling the support flange 51 , thereby preventing the support flange 51 from being heated and outgassing and affecting the system vacuum.

[0094] Those skilled in the art will appreciate that, while in some embodiments of the present disclosure, the cooling device 40 cools both the conductive line 12 and the gas introduction assembly 30, this is merely a preferred embodiment. In some embodiments, cooling may be performed on only the conductive line 12, or on only the gas introduction assembly 30, or independently on the conductive line 12 or the gas introduction assembly 30. For example, the conductive line may include a first conductive line and a second conductive line with hollow interiors, and the neutral beam active source device may further include a cooling device. The cooling device may include: a liquid inlet pipe connected to the first conductive line at the proximal end of the ground line for introducing a coolant into the conductive line; and a liquid outlet connected to the second conductive line at the proximal end of the ground line for discharging the coolant.

[0095] Figure 12 A schematic cross-sectional view of a separator block 32 according to some embodiments of the present disclosure is shown.

[0096] like Figure 12 As shown, in some embodiments of the present disclosure, the partition block 32 may include a first connecting channel 321 and a second connecting channel 322. The first connecting channel 321 and the second connecting channel 322 are L-shaped channels. The first connecting channel 321 can be used to connect the first connecting tube 42 to the outer tube 31, and the second connecting channel 322 connects the second connecting tube 43 to the liquid outlet 44.

[0097] Those skilled in the art will understand that although in some embodiments of the present disclosure, the first connecting channel 321 and the second connecting channel 322 of the partition block 32 are L-shaped channels, this is merely exemplary, and the first connecting channel and the second connecting channel may also be S-shaped channels or Z-shaped channels. Similarly, although in some embodiments of the present disclosure, the first connecting channel 321 and the second connecting channel 322 are provided in the partition block 32, this is merely exemplary, and the partition block may also be provided with a first connecting hole and a second connecting hole, the first connecting hole being used to connect the first connecting tube 42 to the outer tube 31, and the second connecting hole being used to connect the second connecting tube 43 to the liquid outlet 44.

[0098] like Figure 1 、 Figure 2B 、 Figure 4 and Figure 5 As shown, in some embodiments of the present disclosure, the neutral beam active source device 100 may further include a supporting mechanism 50. In some embodiments of the present disclosure, the neutral beam active source device 100 may further include a limit block 18. The supporting mechanism 50 may include a supporting flange 51. The outer tube 31 is passed through the supporting flange 51. The limit block 18 is provided at the distal end of the outer tube 31, and the grounding line 123 is passed through the limit block 18. The limit block 18 can be used to fix the position of the grounding line 123, and when adjusting the angle and / or position of the conductive line 12, only the feed line 121 needs to be adjusted. The support flange 51 or 51a can be used to install the neutral beam active source device 100 or 100a on the vacuum chamber to achieve vacuum sealing.

[0099] like Figure 3A As shown, in other embodiments, the neutral beam active source device 100a may include a support mechanism 50a. The support mechanism 50 may also include a through flange 52, the distal end of the through flange 52 being sealedly connected to the flange 93, and the proximal end of the through flange 52 being connected to the support flange 51.

[0100] like Figure 2B 、 Figure 7 and Figure 11 As shown, in some embodiments of the present disclosure, the neutral beam active source device 100 may further include a sealing assembly 70. The sealing assembly 70 may include a sealing ring 71 and a sealing nut 72. The sealing ring 71 is sleeved on the contraction section 22 and partially located within the expansion section 332 of the intake inner tube 33. The sealing nut 72 is threadedly connected to the expansion section 332 and can be used to compress the sealing ring 71 to seal the contraction section 22 and the expansion section 332 of the intake inner tube 33.

[0101] Those skilled in the art will appreciate that, in other embodiments, the neutral beam active source device 100a may also include a sealing component (eg Figure 18BThe sealing component 70a may have the same or similar structure as the sealing component 70, and will not be described in detail here.

[0102] Existing vacuum seals are mainly classified by the material of the sealing ring. They are composed of synthetic materials such as rubber and metal materials such as sealing indium wire. Rubber synthetic materials have the advantages of high elasticity, high wear resistance, and suitable mechanical strength, making them widely used in vacuum seals. However, they have large outgassing rates and permeability, and cannot be baked at high temperatures and are not resistant to radiation. Metal indium wire seals, on the other hand, have a low melting point and baking temperatures cannot exceed 150°C. They are often used for vacuum sealing in low-temperature environments. In addition, the indium wire tends to flow easily after being pressed. In plasma research, due to the increase in plasma power or the observation of different plasma test results over long periods of time, the sealing rubber rings have been burned, and the sealing indium wire has melted and flowed into the vacuum chamber, causing vacuum environmental pollution and thus affecting the plasma research results.

[0103] Therefore, in some embodiments of the present disclosure, the sealing ring 71 may include pyrolytic boron nitride (PBN) and / or boron nitride (BN). For example, the sealing ring 71 may be made of pyrolytic boron nitride (PBN) material, or made of boron nitride (BN) material. The melting point of pyrolytic boron nitride (PBN) is 1750°C-2300°C, and the melting point of boron nitride (BN) can be as high as 2700°C, which can prevent the equipment from melting and deforming due to overheating, thereby greatly improving the sealing effect. In addition, PBN and BN are non-metallic materials. Parts using PBN and / or BN as sealing materials also have the characteristics of high temperature resistance, corrosion resistance, high resistance, good electrical insulation performance, smooth surface, no pores, non-wetting with most semiconductor melts, good oxidation resistance and thermal shock resistance, etc., so that the equipment will not interfere with the vacuum degree of the vacuum chamber when in use, and can better maintain the vacuum degree of the vacuum environment. At the same time, during the loading and unloading process, it can also protect the internal parts of the present invention.

[0104] like Figure 1 As shown, in some embodiments of the present disclosure, the electromagnetic field generator 10 may further include a shielding shell 19. The shielding shell 19 may be mounted on the electromagnetic field generator 10 to shield electromagnetic signals. The proximal end of the shielding shell 19 is fixedly connected to the support flange 51.

[0105] Those skilled in the art will understand that although in some embodiments of the present disclosure, the shielding shell 19 is only an integral shell, this is only exemplary, and the shielding shell 19a can also be composed of multiple shells, for example, the shielding shell 19 can include a first shell and a second shell.

[0106] like Figure 3A As shown, in some other embodiments, the electromagnetic field generator 10a may also include a shielding shell 19a.

[0107] Figure 13 A partial cross-sectional schematic diagram of a neutral beam active source device 100 according to some embodiments of the present disclosure is shown.

[0108] like Figure 13 As shown, in some embodiments of the present disclosure, the plasma generating chamber 20 may further include a limiting assembly 23. The limiting assembly 23 may include a first limiting member 231 and a second limiting member 232. The first limiting member 231 is sleeved on the contraction section 22 of the plasma generating chamber 20, and the second limiting member 232 is arranged at the distal end of the shielding shell 19. The first limiting member 231 and the second limiting member 232 may be made of high-melting-point metals such as tantalum or molybdenum, and can block the outward diffusion of the electric field, thereby allowing the plasma to converge within the range of the plasma generating chamber 20, limiting the movement of the plasma toward the proximal end of the shielding shell 19, preventing ion corrosion of the equipment, and extending the service life of the equipment.

[0109] like Figure 3B As shown, in some other embodiments of the present disclosure, the plasma generating chamber 20a may also include a limiting component 23 (not shown in the figure).

[0110] Figure 14 A schematic diagram of a sealing structure is shown in which the outer side surface of the sealing ring 71 according to some embodiments of the present disclosure may include a tapered surface. Figure 15 A schematic diagram of a sealing structure is shown in which the outer side surface of the sealing ring 71 according to some embodiments of the present disclosure may include a curved surface.

[0111] like Figure 14 and Figure 15 As shown, the sealing nut 72 and the sealing ring 71 cooperate with each other and are sleeved on the contraction section 22. The sealing nut 72 and the expansion section 332 are threaded together to pre-tighten the sealing ring 71, so that the sealing ring 71 forms a line seal on the contact surface of the sealing nut 72, the expansion section 332 and the contraction section 22, thereby preventing leakage of the medium on both sides and allowing the medium to flow in from the middle. It has the characteristics of good sealing performance and easy disassembly.

[0112] In some embodiments of the present disclosure, Figure 14 As shown, the outer side surface of the sealing ring 71 may include a tapered surface, and the expansion section 332 and the sealing nut 72 may include a tapered concave surface that cooperates with the outer side surface of the sealing ring 71. Those skilled in the art will appreciate that the outer side surface of the sealing ring 71 may include two oppositely disposed tapered surfaces, and the cross-section may be triangular, trapezoidal, or a triangle or trapezoid with truncated base angles.

[0113] In some embodiments of the present disclosure, Figure 15As shown, the outer side surface of the sealing ring 71 may include an arcuate surface, and the expansion section 332 and the sealing nut 72 may include an arcuate concave surface that matches the outer side surface of the sealing ring 71. Those skilled in the art will understand that the arcuate surface may include a circular arc surface or an elliptical arc surface.

[0114] In some embodiments of the present disclosure, when the outer surface of the sealing ring 71 may include a conical surface or an arc-shaped surface, it can withstand the pressure on both sides of the sealing nut 72 and the expansion section 332 without breaking or deforming, and at the same time can seal the contraction section 22 and the expansion section 332 of the intake inner tube 33 to prevent the working gas from escaping into the vacuum chamber, causing a decrease in the vacuum degree and affecting the vacuum processing (for example, coating) effect.

[0115] In some embodiments of the present disclosure, the confining magnetic field is a closed magnetic field, and the central magnetic field direction of the confining magnetic field is horizontal (for example, Figure 22A and Figure 22B shown).

[0116] In some embodiments, the electromagnetic field is in the form of electromagnetic waves in the plasma generating chamber (e.g., Figure 3B The electromagnetic waves propagate in the plasma generating chamber 20a shown, and are parallel to the confining magnetic field. Figure 16 The electromagnetic field generated by the radio frequency current in the inductor 122a shown will propagate outward in the form of electromagnetic waves. The electromagnetic waves enter the plasma generating chamber (for example, Figure 3B The plasma generating chamber 20a shown in FIG. 20a is a plasma generating chamber. When the plasma discharge region propagates, the plasma generating chamber (eg, Figure 3B The electrons and ions in the plasma generating chamber 20a shown will perform cyclotron motion under the action of the electromagnetic field. The electromagnetic wave is split into a left-handed polarized component and a right-handed polarized component in the plasma discharge region. The right-handed polarized component rotates synchronously with the cyclotron electrons. The electrons will be continuously accelerated synchronously to obtain higher energy. Through the interaction between the electromagnetic wave and the plasma, the energy of the electrons is transferred to the plasma, which greatly increases the plasma density, thereby increasing the concentration of neutral particles. At the same time, the higher collision frequency also provides a higher density plasma under low pressure conditions. The design of the confined magnetic field makes the neutral beam active source device (for example, Figure 3A The shown neutral beam active source device 100 a ) is capable of operating under a wider range of operating gas pressures.

[0117] Figure 16 A schematic structural diagram illustrating the position arrangement of the magnet 91 according to some embodiments of the present disclosure is shown.

[0118] In some embodiments of the present disclosure, the magnetic field confinement mechanism 90 may include at least one magnet 91 to generate a confining magnetic field.

[0119] Those skilled in the art will appreciate that a closed magnetic field can be generated by any suitable number of magnets, and the magnets can also take any suitable form, such as permanent magnets (e.g., magnets, etc.), electromagnets (e.g., coils, etc.), etc. In some embodiments, the magnetic field confinement mechanism 90 may include a magnetic coil (not shown) to generate a closed magnetic field.

[0120] like Figure 16 As shown, in some embodiments of the present disclosure, at least one magnet 91 is disposed on the periphery of the inductive coil 122a.

[0121] like Figure 16 As shown, in some embodiments of the present disclosure, at least one magnet 91 may include multiple magnets, such as symmetrically arranged magnet groups 91a and 91b, each of which may include three rows of magnets spaced apart. Taking magnet group 91a as an example, it may include a first row of magnets 911a, a second row of magnets 911b, and a third row of magnets 911c spaced apart, each row of magnets may include three magnets spaced apart laterally.

[0122] Those skilled in the art will understand that Figure 16 The illustrated arrangement of the magnets is merely exemplary. For example, the plurality of magnets 91 may include magnets in other arrangements, and the magnet groups 91a and 91b may include magnets in other rows, such as one row, two rows, or four or more rows. The fact that each row of magnets includes three magnets spaced laterally apart is also merely exemplary, and each row of magnets may also include other numbers of magnets, such as one magnet, two magnets, or four or more magnets.

[0123] like Figure 16 As shown, in some embodiments of the present disclosure, the magnet may be a cylindrical magnet. Those skilled in the art will appreciate that this is merely exemplary and magnets of other shapes may also be selected, such as cubic magnets, prismatic magnets, and the like.

[0124] like Figure 16 As shown, in some embodiments of the present disclosure, the magnetic field confinement mechanism 90 may further include a magnet fixing mechanism 94. The magnet fixing mechanism 94 may be used to place the magnet 91 on the periphery of the inductive coil 122a.

[0125] like Figure 16As shown, in some embodiments, the magnet securing mechanism 94 may include a support portion 942 for positioning the magnet 91 around the periphery of the inductor coil 122. The support portion 942 may include multiple magnet securing holes (not shown) for securing multiple magnets. The support portion 942 may be generally cylindrical and may include multiple portions arranged opposite or spaced apart. The magnet securing mechanism 94 may also include a securing ring 941 disposed at the distal end of the support portion 942.

[0126] Figure 17A A schematic structural diagram of a magnetic field confinement mechanism 90 according to some embodiments of the present disclosure is shown. Figure 17B Show Figure 17A BB cross-section diagram. Figure 18A A partial structural schematic diagram of a neutral beam active source device according to some other embodiments of the present disclosure is shown. Figure 18B Show Figure 18A CC cross-section diagram.

[0127] like Figure 17A and Figure 18B As shown, in some embodiments of the present disclosure, the magnetic field confinement mechanism 90 may further include a magnet cooling mechanism 92. Figure 18B As shown, the magnet cooling mechanism 92 may include a magnet inner cooling pipe 921 and a magnet outer cooling pipe 922. The magnet inner cooling pipe 921 is arranged on the inner side of the support portion 942 (the support portion 942 is omitted in the figure for convenience of illustration). The magnet outer cooling pipe 922 is sleeved outside the magnet inner cooling pipe 921 and arranged on the outer side of the support portion 942, and a magnet cooling channel 926 for circulating the coolant is formed between the magnet inner cooling pipe 921 and the magnet outer cooling pipe 922. Since the magnet inner cooling pipe 921 and the magnet outer cooling pipe 922 are respectively arranged on the inner side and the outer side of the support portion 942, a plurality of magnets 91 (for example, magnet groups 91a, 91b) can be located in the magnet cooling channel 926, thereby being immersed in the coolant, so that the cooling effect is enhanced.

[0128] like Figure 18B As shown, the magnet cooling mechanism 92 may further include a magnet cooling liquid inlet pipe 923 and a magnet cooling liquid outlet pipe 924. The magnet cooling liquid inlet pipe 923 is used to introduce cooling liquid into the magnet cooling channel 926. The magnet cooling liquid outlet pipe 924 is used to discharge the cooling liquid in the magnet cooling channel 926.

[0129] like Figure 17B and 18BAs shown, in some embodiments of the present disclosure, the magnet cooling mechanism 92 may further include a magnet cooling inner liquid outlet pipe 925, which extends along the magnet external cooling pipe 922 and is connected at its distal end to the magnet cooling channel 926. When the liquid level in the magnet cooling channel 926 is higher than the magnet cooling inner liquid outlet pipe 925, the coolant can be discharged from the magnet cooling inner liquid outlet pipe 925. The magnet cooling inner liquid outlet pipe 925 is connected to the magnet cooling liquid outlet pipe 924 and can be used to discharge the coolant in the magnet cooling channel 926.

[0130] The fixing ring 941 of the magnet fixing mechanism 94 can be arranged at the distal end of the magnet cooling mechanism 92 and sealedly connected to the distal end of the magnet cooling channel 926. The support portion 942 is connected to the fixing ring 941 and extends toward the proximal end of the magnet cooling channel 926. Figure 17A As shown, the magnetic field confinement mechanism 90 may further include a flange 93. The flange 93 is sealedly connected to the proximal end of the magnet cooling channel 926. The flange 93 may include a channel allowing the magnet cooling liquid inlet pipe 923 and the magnet cooling liquid outlet pipe 924 to pass through.

[0131] Figure 19 A schematic diagram of the three-dimensional structure of a neutral beam active source device 100 according to some embodiments of the present disclosure is shown.

[0132] like Figure 19 As shown, the neutral beam active source device 100 may further include a support block 15 and a signal shielding cover 16. The support block 15 is used to support the RF power supply 11. The signal shielding cover 16 may be arranged as follows: Figure 5 The electrode feedthrough 13 shown is, for example, disposed within a signal shielding cover 16 to shield the electrode feedthrough 13 from signal interference. In some embodiments, the signal shielding cover 16 may further include a fan (not shown) to dissipate heat from the shielded electrode feedthrough 13.

[0133] Figure 20A -C shows the geometric arrangement diagram of the magnets during simulation according to some embodiments of the present disclosure, wherein Figure 20A shows the xy plane arrangement of the magnets; Figure 20B shows the xz plane arrangement diagram of the magnet; Figure 20C Shown is a three-dimensional arrangement of magnets. Figure 21A -C shows some embodiments according to the present disclosure, for example Figure 20A -C shows the geometric arrangement of the magnets, and the multi-section magnetic field spatial distribution obtained after the magnet simulation, where Figure 21A The spatial distribution of the magnetic field in multiple slices of the xy plane is shown; Figure 21B The spatial distribution of the magnetic field in multiple slices of the xz plane is shown; Figure 21C The three-dimensional multi-section magnetic field spatial distribution is shown. Figure 22A-C shows some embodiments according to the present disclosure, for example Figure 20A -C shows the geometric arrangement of the magnets, and the spatial distribution of the surface magnetic field obtained after the magnet simulation, where Figure 22A shows the spatial distribution of the surface magnetic field in the xy plane; Figure 22B The spatial distribution of the surface magnetic field in the xz plane is shown; Figure 22C The surface magnetic field spatial distribution in the yz plane is shown. Figure 23A -C shows some embodiments according to the present disclosure, for example Figure 20A -C shows the geometric arrangement of the magnets, and the line result diagram obtained after the magnet simulation, where Figure 23A A line result graph is shown with the x-axis; Figure 23B A line result graph showing the y-axis;

[0134] Figure 23C The line result diagram of the z-axis is shown, and it can be seen that the magnetic flux density is evenly or relatively evenly distributed on the x-axis, the y-axis, and the z-axis.

[0135] like Figures 20A-20C As shown, in some embodiments of the present disclosure, the Figure 16 The magnet arrangement mode is to set three rows of magnets from bottom to top and conduct simulation experiments. The simulation results are as follows Figures 21A to 23C shown.

[0136] Those skilled in the art will appreciate that although Figures 20A-20C The magnet shown is shaped like a cylinder, but this is merely exemplary. In some embodiments of the present disclosure, magnet materials of other shapes, such as a rectangular parallelepiped magnet, may also be used.

[0137] In some embodiments of the present disclosure, nitrogen, hydrogen or oxygen may be introduced into the neutral beam active source device 100 or 100a to form kinetic nitrogen molecules and / or nitrogen atoms, kinetic hydrogen molecules and / or hydrogen atoms, or kinetic oxygen molecules and / or oxygen atoms.

[0138] According to some embodiments of the present disclosure, the neutral beam active source device 100 or 100a provides a richer set of adjustable parameters. By adjusting the RF power of the neutral beam active source device, the output power of the electrode bias power supply, the flow rate of the working gas, etc., the kinetic energy of the neutral particles can be adjusted, thereby improving the flexibility, adaptability, and controllability of vacuum processing using neutral particles. For example, the controllability of the epitaxial growth of single-crystal metal compound films can be improved. For example, in some embodiments, the generation rate of aluminum nitride can be changed by changing the power of the RF source of the neutral beam active source device and the flow rate of the working gas nitrogen.

[0139] According to the neutral beam active source 100 or 100a of some embodiments of the present disclosure, the kinetic energy of the neutral particles can be controlled within an appropriate range, which can not only overcome the chemical reaction barrier and promote thin film growth, but also avoid the lattice damage problem caused by charged particles, thereby achieving epitaxial growth similar to that at high temperature at a much lower temperature.

[0140] In some embodiments, the neutral beam active source device can output active nitrogen particles with different kinetic energies (e.g., (0.1-30 eV)), which may include nitrogen molecules and a small amount of nitrogen atoms. The kinetic energy of the active nitrogen particles is used to further regulate the nitriding ability, thereby changing the film thickness of the single crystal aluminum nitride.

[0141] Figure 25 FIG. 1 is a schematic structural diagram of a vacuum system 1000 according to some embodiments of the present disclosure.

[0142] like Figure 25 As shown, the vacuum system 1000 may include a vacuum chamber 200, a neutral beam active source device (eg, Figure 1 The neutral beam active source device 100 shown or Figure 3A The neutral beam active source device 100a shown in the figure) and the sample 300. The neutral beam active source device 100 or 100a can be at least partially disposed in the vacuum chamber 200 through the support flange 51, and can be used to emit neutral particles to the sample 300 in the vacuum chamber 200, thereby performing various vacuum processes, such as coating, cleaning, etching, etc. For example, in some embodiments of the present disclosure, the neutral beam active source device (e.g., Figure 1 The neutral beam active source device 100 shown or Figure 3A The neutral particle beam formed by the neutral beam active source device 100a) shown can provide the energy required for atoms to fully migrate on the sample surface, thereby achieving high-quality single-crystalline metal compound films by epitaxial growth at a lower temperature.

[0143] like Figure 25 As shown, in some embodiments of the present disclosure, the vacuum system 1000 may further include a metal source 400 . The metal source 400 is vacuum-tightly connected to the vacuum chamber 200 and is used to emit metal particles toward the sample 300 .

[0144] In some embodiments of the present disclosure, the sample may include a Si(111) substrate and an aluminum nitride (AlN) buffer layer (e.g., epitaxially grown) on the Si(111) substrate. Figure 25The vacuum system 1000 shown can be used to grow a series of GaN epitaxial layers on AlN / Si(111) samples at temperatures lower than conventional growth temperatures (e.g., 680-750°C for plasma-assisted molecular beam epitaxy (PAMBE)). In addition, a GaN sample grown at 720°C can be used as a reference. Those skilled in the art will appreciate that the vacuum chamber 200 can also include a heater (not shown) for sample heating.

[0145] Figure 26A The (002) rocking curves of GaN films epitaxially grown at different temperatures in a vacuum system according to some embodiments of the present disclosure are shown. Figure 26B A scanning electron microscope cross-sectional image of a GaN film epitaxially grown at 350°C is shown.

[0146] For GaN epitaxy, the neutral beam active source devices all operated at the same RF power of 300 W and the same nitrogen flow rate of 3 sccm. Figure 26A It shows that the (002) rocking curves of GaN epitaxially grown at 450℃ and 720℃ are almost completely overlapped. Figure 26A As shown, the half-width of the (002) rocking curve of GaN epitaxially grown at 450℃ and 720℃ is 0.34°, indicating that the crystal quality of the GaN epitaxial film is almost unaffected by the substrate temperature in the range of 450℃-720℃. This shows that the use of a neutral beam active source device can achieve single-crystal GaN epitaxial growth at 450℃ similar to that at high temperatures. Below 450℃, the rocking curve of GaN (002) tends to broaden, indicating that the crystal quality decreases with decreasing substrate temperature, which is related to the insufficient migration of atoms on the substrate surface at low temperatures. However, even the GaN film obtained at 200℃ still has a narrow rocking curve (half-width of 0.5°), indicating that the epitaxial GaN at this temperature still has a high crystal quality. The neutral particle beam with adjustable kinetic energy obtained by the neutral beam active source device in any embodiment of the present disclosure is used for molecular beam epitaxy to achieve near-room temperature epitaxy of GaN.

[0147] Figure 26B The scanning electron microscope cross-section of the GaN sample grown at 350°C is shown. It can be seen that the AlN / GaN interface prepared on the Si substrate is clear and of very high quality.

[0148] It should be pointed out that the above are only exemplary embodiments of the present disclosure and are not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure should be included in the scope of protection of the present disclosure.

Claims

1. A neutral beam active source device, characterized in that: include: An electromagnetic field generator, used for generating an electromagnetic field after being powered on; A plasma generating chamber, coupled to the electromagnetic field generator, for containing a working gas and plasma generated by the working gas under the action of the electromagnetic field, wherein the plasma generating chamber comprises a plasma outlet; as well as The neutralizer is arranged at the far end of the plasma outlet of the plasma generating chamber, and the neutralizer comprises a plurality of through holes for allowing the plasma to pass through and form a neutral particle beam.

2. The neutral beam active source device according to claim 1, characterized in that: The neutralizer is grounded; or The neutralizer is connected to a bias voltage.

3. The neutral beam active source device according to claim 1 or 2, characterized in that: Also includes: Electrode bias power supply; as well as The electrode is connected to the electrode bias power supply and is arranged inside the proximal end of the plasma generating chamber to guide the charged particles in the plasma to the neutralizer.

4. The neutral beam active source device according to claim 1 or 2, characterized in that: The ratio of the depth to the width of the through hole is between 2:1 and 20:1; and / or The kinetic energy of the neutral particles in the neutral particle beam is between 0 eV and 2000 eV.

5. The neutral beam active source device according to claim 1, characterized in that: It also includes a magnetic field confinement mechanism for generating a confining magnetic field; The plasma generating chamber is coupled with the electromagnetic field generator and the magnetic field confinement mechanism, and is used to contain the working gas and the plasma generated by the working gas under the action of the electromagnetic field and the confinement magnetic field.

6. The neutral beam active source device according to claim 1 or 5, characterized in that: The electromagnetic field generator comprises: Conducting lines, including: A feeding line, used for connecting to a radio frequency power source; An inductor coil connected to the feed line and wound around the plasma generating chamber for generating an electromagnetic field; A grounding circuit is connected to the inductor.

7. The neutral beam active source device according to claim 6, characterized in that: The conductive line includes a first conductive line and a second conductive line, The first conductive wire and the second conductive wire are connected at a feeding end of the feeding line, and form a double winding structure at the inductor.

8. The neutral beam active source device according to claim 6, characterized in that: The plasma generating chamber comprises a chamber body and a contraction section, and the inductor coil is wound around the chamber body. The neutral beam active source device further comprises a gas introduction component, wherein the gas introduction component comprises: External pipe; a separator block sealingly connected to the outer tube and defining a proximal end portion at the proximal end of the outer tube; and An air inlet inner tube, the proximal end of which is sealedly inserted into the outer tube through the partition block, and is connected to the gas source through the proximal end portion, for introducing the gas generated by the gas source; The inner air intake tube comprises a main body and an expansion section at a distal end, wherein the expansion section is engaged with the distal end of the outer tube and is used for inputting gas into the cavity.

9. The neutral beam active source device according to claim 8, characterized in that: Also includes: Seal kit, comprising: A sealing ring, sleeved on the contraction section and partially located in the expansion section of the intake inner pipe; A sealing nut is threadedly connected to the expansion section and is used to compress the sealing ring to seal the contraction section and the expansion section of the intake inner pipe.

10. The neutral beam active source device according to claim 9, characterized in that: The outer side surface of the sealing ring includes a conical surface or an arcuate surface, and the expansion section and the sealing nut include a conical concave surface or an arcuate concave surface matching the outer side surface of the sealing ring; and / or The sealing ring comprises pyrolytic boron nitride and / or boron nitride.

11. The neutral beam active source device according to claim 6, characterized in that: The conductive line includes a first conductive wire and a second conductive wire which are hollow inside. The neutral beam active source device further comprises a cooling device, The cooling device comprises: a liquid inlet, connected to the first conductive wire at the proximal end of the grounding circuit, and used for introducing cooling liquid into the conducting circuit; as well as A liquid outlet pipe is connected to the second wire at the proximal end of the grounding line and is used for discharging cooling liquid.

12. The neutral beam active source device according to claim 5, characterized in that: The confining magnetic field is a closed magnetic field, and the central magnetic field direction of the confining magnetic field is horizontal; and / or The electromagnetic field propagates in the plasma generating cavity in the form of electromagnetic waves, and the electromagnetic waves are parallel to the confining magnetic field.

13. The neutral beam active source device according to claim 5, characterized in that: The magnetic field confinement mechanism comprises at least one magnet to generate a confining magnetic field.

14. The neutral beam active source device according to claim 13, characterized in that: The magnetic field confinement mechanism also includes: a magnet fixing mechanism, the magnet fixing mechanism comprising a support portion for arranging the at least one magnet on the periphery of the inductor coil; and / or A magnet cooling mechanism, the magnet cooling mechanism comprising: A cooling tube inside the magnet, arranged inside the support portion; and A magnet outer cooling pipe is sleeved outside the magnet inner cooling pipe and arranged outside the support portion, and a magnet cooling channel for circulating a coolant is formed between the inner cooling pipe and the outer cooling pipe; The magnet fixing mechanism further includes a fixing ring, which is arranged at the distal end of the supporting portion and is sealingly connected to the distal end of the magnet cooling channel.

15. A vacuum system, characterized in that: include: Vacuum chamber; as well as The neutral beam active source device as described in any one of claims 1 to 14, wherein the neutral beam active source device is at least partially disposed in the vacuum chamber, and is used to emit a neutral particle beam into the vacuum chamber.

Images