Substance deposition method based on rough and uneven substrate
By obtaining the substrate flatness and controlling the distribution of solution and air flow, the problem of uneven deposition of perovskite layer on uneven substrates is solved, and uniform deposition of perovskite films and the preparation of high-performance devices are achieved.
Patent Information
- Application Number
- CN202411673034.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-21
- Publication Date
- 2025-03-11
AI Technical Summary
During the preparation of perovskite/crystalline silicon stacked batteries, due to uneven substrates, the deposited perovskite layer cannot form a uniform film, which seriously affects the optical absorption and device performance.
By obtaining the flatness of the substrate, controlling the solution coating position, adjusting the blowing position, angle and flow rate, uniform deposition of the solution wet film is achieved, forming a dry film with uniform thickness and uniform distribution of basic elements of the material.
The uniform deposition of the solution is achieved, ensuring uniform dry film thickness after crystallization and uniform material distribution, improving optical absorption and device performance.
Smart Images
Figure CN119604163A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the technical field of solution deposition, and in particular to a material deposition method based on a rough and uneven substrate. Background Art
[0002] The preparation of perovskite precursors is one of the key steps in the manufacturing process of perovskite solar cells. However, due to the accuracy of diamond wire cutting, the silicon wafer bottom cell is not absolutely flat. Within the range of 210mm, there is an unevenness of more than 10um. In addition, due to the constant action parameters, the perovskite precursor deposited by slit coating can no longer form a wet film with consistent thickness.
[0003] In the preparation process of perovskite / crystalline silicon tandem cells, the deposited perovskite layer is in the range of 500nm-10000nm. In the context of the unevenness of crystalline silicon exceeding 10um, the perovskite layer cannot form a uniform film after crystallization, which seriously affects the optical absorption and device performance. Summary of the invention
[0004] The present disclosure aims to solve one of the technical problems in the related art at least to some extent.
[0005] To this end, an object of the present disclosure is to provide a material deposition method based on a rough and uneven substrate.
[0006] To achieve the above-mentioned purpose, the present disclosure provides a material deposition method based on a rough and uneven substrate, comprising: obtaining the flatness of the substrate; coating the solution on the substrate, and controlling the coating position according to the flatness of the substrate, so that a solution wet film in a first thickness range is formed on the substrate; obtaining the thickness of the wet film at different positions; blowing air to the wet film, and controlling the position, angle and flow rate of the blowing air according to the thickness of the corresponding position of the wet film, so that the wet film forms a dry-wet film in a second thickness range; and performing crystallization treatment on the dry-wet film, so that the dry-wet film forms a dry film in a third thickness range.
[0007] Optionally, acquiring the flatness of the substrate includes: setting a reference plane, wherein the reference plane and the substrate are arranged relative to each other; acquiring acquisition intervals between the reference plane and the substrate at different positions; and obtaining the flatness of the substrate according to a plurality of the acquisition intervals.
[0008] Optionally, controlling the coating position according to the flatness of the substrate includes: setting a reference plane of the substrate, and taking the distance between the reference plane and the reference plane as a reference distance; obtaining a distance deviation of a corresponding position according to the collection distance and the reference distance; and correcting the coating distance between the solution coating point at the corresponding position and the reference plane according to the distance deviation.
[0009] Optionally, correcting the coating spacing between the solution coating point at the corresponding position and the reference plane according to the spacing deviation includes: when the collection spacing is greater than the reference spacing and the spacing deviation is negative, reducing the coating spacing according to the spacing deviation; when the collection spacing is less than the reference spacing and the spacing deviation is positive, increasing the coating spacing according to the spacing deviation.
[0010] Optionally, the material deposition method further includes: arranging a laser on the reference surface, and disposing a detection end of the laser relative to the substrate; and moving the laser to different positions of the reference surface to obtain a collection interval between the reference surface and the substrate at different positions.
[0011] Optionally, the material deposition method further includes: arranging a full-spectrum thin film interferometer on the reference surface, and setting the detection end of the full-spectrum thin film interferometer and the substrate relative to each other; moving the full-spectrum thin film interferometer to different positions of the reference surface to obtain the thickness of the wet film at different positions.
[0012] Optionally, the material deposition method further includes: arranging a coating head on a first three-axis motion mechanism; coating the solution on the substrate using the coating head, and controlling the first three-axis motion mechanism according to the flatness of the substrate to adjust the coating position of the coating head.
[0013] Optionally, the material deposition method also includes: arranging a wind knife on a second three-axis motion mechanism; using the wind knife to blow air to the wet film, and controlling the second three-axis motion mechanism according to the thickness of the corresponding position of the wet film to adjust the blowing position of the wind knife.
[0014] Optionally, the material deposition method further includes: arranging the air knife on an angle adjustment mechanism on the second three-axis motion mechanism; and controlling the angle adjustment mechanism according to the thickness of the corresponding position of the wet film to adjust the blowing angle of the air knife.
[0015] Optionally, the material deposition method also includes: when the wet film forms the dry-wet film, obtaining the thickness of the dry-wet film at different positions, and estimating the thickness of the dry film based on the thickness of the dry-wet film at different positions and a proportional model; and / or when the dry-wet film forms the dry film, obtaining the thickness of the dry film at different positions.
[0016] The technical solution provided by the present disclosure may have the following beneficial effects:
[0017] The coating position is controlled according to the flatness of the substrate, so that a solution wet film in a first thickness range is formed on the substrate, and the position, angle and flow rate of the air blowing are controlled according to the thickness of the corresponding position of the wet film, so that the wet film forms a dry-wet film in a second thickness range. Thus, the closed-loop control of the coating process and the closed-loop control of the air blowing process are utilized to achieve uniform deposition of the solution, so that the dry film after crystallization can form a thin film with uniform thickness and uniform distribution of basic elements of the material, thereby effectively ensuring optical absorption and device performance.
[0018] Additional aspects and advantages of the present disclosure will be given in part in the following description and in part will be obvious from the following description or learned through practice of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] The above and / or additional aspects and advantages of the present disclosure will become apparent and easily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:
[0020] Figure 1 It is a schematic diagram of a process of a material deposition method based on a rough and uneven substrate proposed in one embodiment of the present disclosure;
[0021] Figure 2 It is a schematic structural diagram of coating in a material deposition method based on a rough and uneven substrate proposed in one embodiment of the present disclosure;
[0022] Figure 3 It is a structural schematic diagram of blowing in a material deposition method based on a rough and uneven substrate proposed in an embodiment of the present disclosure;
[0023] Figure 4 is a schematic structural diagram of the deposition process in the material deposition method proposed in the related embodiment;
[0024] As shown in the figure: 1. substrate, 2. wet film, 3. dry and wet film;
[0025] 10. laser, 20. coating head, 30. first three-axis motion mechanism;
[0026] 40. Full spectrum thin film interferometer, 50. Wind knife, 60. Second three-axis motion mechanism, 70. Angle adjustment mechanism. DETAILED DESCRIPTION
[0027] Embodiments of the present disclosure are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present disclosure, and are not to be construed as limitations of the present disclosure. On the contrary, the embodiments of the present disclosure include all changes, modifications, and equivalents that fall within the spirit and connotation of the appended claims.
[0028] like Figure 1 , Figure 2 and Figure 3 As shown, the embodiment of the present disclosure provides a material deposition method based on a rough and uneven substrate 1, comprising:
[0029] S1: Obtaining the flatness of substrate 1;
[0030] S2: coating the solution on the substrate 1, and controlling the coating position according to the flatness of the substrate 1, so that a solution wet film 2 in a first thickness range is formed on the substrate 1;
[0031] S3: Obtain the thickness of the wet film 2 at different positions;
[0032] S4: blowing air to the wet film 2, and controlling the position, angle and flow rate of the air blowing according to the thickness of the corresponding position of the wet film 2, so that the wet film 2 forms a dry-wet film 3 in a second thickness range;
[0033] S5: performing a crystallization process on the dry-wet film 3 to form the dry-wet film 3 into a dry film within a third thickness range.
[0034] It can be understood that the coating position is controlled according to the flatness of the substrate 1, so that a solution wet film 2 in a first thickness range is formed on the substrate 1, and the position, angle and flow rate of the air blowing are controlled according to the thickness of the corresponding position of the wet film 2, so that the wet film 2 forms a dry-wet film 3 in a second thickness range. Thus, by utilizing the closed-loop control of the coating process and the closed-loop control of the air blowing process, uniform deposition of the solution is achieved, so that the dry film after crystallization can form a thin film with uniform thickness and uniform distribution of basic elements of the material, thereby effectively ensuring optical absorption and device performance.
[0035] Among them, the uniform deposition method of the solution can achieve fast and accurate coating and form a dry film with consistent thickness, which can not only effectively save materials and reduce manufacturing costs, but also improve the finished product rate and yield rate to ensure product quality.
[0036] It should be noted that, in the relevant embodiments, Figure 4 As shown, the distance between the coating position and the reference plane of the substrate 1 is fixed. Although the surface of the wet film 2 is flat after coating, the thickness of the wet film 2 is uneven due to the unevenness and roughness of the substrate 1. The thickness deviation between each position is too large and exceeds the allowable range. At the same time, in the relevant embodiments, the distance between the blowing position and the reference plane of the substrate 1 is fixed, and the blowing angle and flow rate are fixed. However, since the thickness of the wet film 2 cannot be completely consistent, the same action parameters will still cause uneven thickness of the dry and wet films 3, thereby causing the deposition layer to be unable to form a uniform dry film, seriously affecting the optical absorption and device performance.
[0037] In the present embodiment, the distance between the coating position and the reference plane of the substrate 1 can be adjusted as the flatness of the substrate 1 changes, thereby achieving uniform coating of the solution on the substrate 1. At the same time, the distance between the blowing position and the reference plane of the substrate 1, as well as the blowing angle and flow rate can be adjusted as the thickness of the wet film 2 changes, thereby achieving a uniform dry-wet film 3 with the same thickness.
[0038] The material deposition method of this embodiment can be applied to the preparation of perovskite precursors. The solution is deposited on an uneven substrate 1. The substrate 1 can be crystalline silicon or any non-polished surface with roughness, which is not limited.
[0039] Solution coating refers to a coating technology that pumps a certain amount of fluid into a mold that can evenly spread the fluid, and squeezes and sprays it along the gap of the coating mold at a certain pressure and flow rate to transfer it to the substrate. Its working principle is to control the size of the coating knife edge and the coating pressure to evenly coat the coating on the surface of the workpiece.
[0040] The first thickness range may be 5um-500um, that is, by controlling the coating position according to the flatness of the substrate 1, the thickness of the solution wet film 2 formed on the substrate 1 at any position can be within the range of 5um-500um.
[0041] Air Knife 50 is a device that uses high-speed airflow to blow, dry or cool the surface of an object. The Stainless Steel Air Knife 50 is a modified design of the Standard Air Knife 50. It is made of a bent stainless steel plate and assembled with two precision stainless steel blades. It has higher air uniformity and less wind resistance.
[0042] The second thickness range may be 2um-10um, that is, by controlling the position, angle and flow rate of the air blowing according to the thickness of the corresponding position of the wet film 2, the thickness of any position of the dry-wet film 3 formed by the wet film 2 can be within the range of 2um-10um.
[0043] Wherein, the strength of the wind knife 50 needs to be reduced at the location where the thickness of the wet film 2 is smaller, and the strength of the wind knife 50 needs to be increased at the location where the thickness of the wet film 2 is larger. Thus, the corresponding crystallization can be triggered at a specific location, with a specific strength and time, so that a uniform dry and wet film 3 with the same thickness can be obtained.
[0044] In addition to using the air knife 50 to blow air to the wet film 2 , other solution disturbance methods can also be used to achieve the conversion of the wet film 2 to the dry wet film 3 .
[0045] After the wet film 2 is blown, the wet film 2 is first converted into a dry wet film 3, and then converted from the dry wet film 3 into a dry film through a crystallization process.
[0046] The crystallization treatment may be performed by infrared drying (IR), annealing, etc., which is not limited.
[0047] The third thickness range may be 0.5um-10um, that is, the dry-wet film 3 is crystallized so that the thickness of any position of the dry film formed by the dry-wet film 3 is within the range of 0.5um-10um and remains uniform.
[0048] Based on the second thickness range and the third thickness range, it can be seen that the thickness reduction ratio from the wet film 2 to the dry wet film 3 is 2.5 times to 50 times, and the thickness reduction ratio from the dry wet film 3 to the crystallized dry film is 1 times to 20 times.
[0049] like Figure 2 As shown, in some embodiments, obtaining the flatness of the substrate 1 includes:
[0050] A reference surface is provided, wherein the reference surface and the substrate 1 are arranged opposite to each other;
[0051] Obtaining the collection distance between the reference surface and the substrate 1 at different positions;
[0052] The flatness of the substrate 1 is obtained according to a plurality of acquisition intervals.
[0053] It can be understood that by setting the reference surface and the substrate 1 relative to each other and obtaining the collection intervals between the reference surface and the substrate 1 at different positions, the flatness of the substrate 1 can be obtained according to multiple collection intervals, and then the coating position can be controlled according to the flatness of the substrate 1 to achieve a solution wet film 2 with uniform thickness.
[0054] It should be noted that since the distance between the reference surface and the reference plane of the substrate 1 is fixed, when the substrate 1 is rough and uneven so that some parts are protruding or concave relative to the reference plane, different collection distances will be generated. In other words, using the collection distances at different positions can truly and accurately reflect the flatness of the substrate 1.
[0055] like Figure 2 As shown, in some embodiments, controlling the coating position according to the flatness of the substrate 1 includes:
[0056] Setting a reference plane of the substrate 1, and taking the distance between the reference plane and the reference plane as a reference distance;
[0057] Obtain the spacing deviation of the corresponding position according to the acquisition spacing and the reference spacing;
[0058] The coating distance between the solution coating point at the corresponding position and the reference surface is corrected according to the distance deviation.
[0059] It can be understood that by setting the reference distance between the reference plane and the reference plane, and obtaining the distance deviation of the corresponding position based on the acquisition distance and the reference distance, the solution coating point at the corresponding position and the coating distance of the reference plane are corrected according to the distance deviation, thereby achieving the control of the coating position according to the flatness of the substrate 1 to achieve a solution wet film 2 with uniform thickness.
[0060] It should be noted that the datum plane serves as the datum plane of the substrate 1, and is arranged parallel to the reference plane. That is to say, the spacing between the datum plane and the reference plane is uniform and consistent, and different positions have the same datum spacing. Since the collection spacing is the actual spacing between the reference plane and the substrate 1, different positions have different collection spacings. Therefore, the spacing deviation between the collection spacing and the datum spacing can truly reflect the flatness. Furthermore, by correcting the coating spacing at the corresponding position according to the spacing deviation, a solution wet film 2 with uniform thickness can be achieved.
[0061] Here, the solution coating point refers to the position of the coating head 20 that discharges the solution.
[0062] In some embodiments, correcting the coating spacing between the solution coating point at the corresponding position and the reference surface according to the spacing deviation includes:
[0063] When the collection spacing is greater than the reference spacing and the spacing deviation is negative, the coating spacing is reduced according to the spacing deviation;
[0064] When the acquisition pitch is smaller than the reference pitch and the pitch deviation is positive, the coating pitch is increased according to the pitch deviation.
[0065] It can be understood that when the collection spacing is greater than the reference spacing and the spacing deviation is negative, it means that the position is a concave position of the substrate 1. Therefore, the coating spacing is reduced according to the spacing deviation, so that the solution coating point is closer to the concave position, thereby achieving a uniform solution wet film 2.
[0066] When the collection spacing is smaller than the reference spacing and the spacing deviation is positive, it indicates that the position is the protruding position of the substrate 1. Therefore, the coating spacing is increased according to the spacing deviation, so that the solution coating point is further away from the protruding position, thereby achieving a uniform solution wet film 2.
[0067] It should be noted that when the collection spacing is greater than the reference spacing and the spacing deviation is negative, if the coating spacing is maintained, the thickness of the wet film 2 at this position will be too large, and when the collection spacing is less than the reference spacing and the spacing deviation is positive, if the coating spacing is maintained, the thickness of the wet film 2 at this position will be too small, thereby resulting in a wet film 2 with uneven thickness.
[0068] In this embodiment, the protrusion and depression of the position of the substrate 1 are judged by the positive and negative values of the spacing deviation, and the coating spacing is increased or decreased according to the value of the spacing deviation, thereby achieving the adaptation of the solution coating point to different positions of the substrate 1, and further achieving a uniform solution wet film 2.
[0069] like Figure 2 As shown, in some embodiments, the material deposition method further comprises:
[0070] Arrange a laser 10 on the reference surface, and make the detection end of the laser 10 and the substrate 1 face each other;
[0071] The laser 10 is moved to different positions of the reference surface to obtain collection intervals between the reference surface and the substrate 1 at different positions.
[0072] It is understandable that by moving the laser 10 at different positions of the reference surface, laser ranging at different positions between the reference surface and the substrate 1 can be achieved, thereby achieving accurate acquisition of the collection intervals at different positions.
[0073] It should be noted that the laser 10 is used to detect the distance between the reference surface and the substrate 1 by emitting and receiving laser light. The detection distance range of the laser 10 can be 1um-1000um, and the accuracy range can be 1nm-1000nm, which is not limited.
[0074] like Figure 3 As shown, in some embodiments, the material deposition method further comprises:
[0075] A full-spectrum thin-film interferometer 40 is arranged on the reference surface, and a detection end of the full-spectrum thin-film interferometer 40 is arranged opposite to the substrate 1;
[0076] The full spectrum thin film interferometer 40 is moved to different positions of the reference surface to obtain the thickness of the wet film 2 at different positions.
[0077] It is understandable that by moving the full-spectrum thin film interferometer 40 at different positions on the reference surface, the film thickness at different positions between the reference surface and the substrate 1 can be measured, thereby achieving accurate acquisition of the thickness of the wet film 2 at different positions.
[0078] It should be noted that the full-spectrum thin film interferometer 40 is an instrument based on the interference phenomenon of light and capable of measuring parameters such as film thickness and refractive index. Its working principle is that when light waves pass through the film to be measured, they interfere with the light waves reflected by the surface and bottom of the film to form interference fringes. The number and spacing of these interference fringes are directly related to the thickness of the film. By capturing and analyzing these interference fringes, the real-time thickness of the film can be accurately calculated.
[0079] The full-spectrum thin film interferometer 40 can detect dry and wet films 3 with a thickness range of 2um-10um, wet films 2 with a thickness range of 5um-500um, etc., without limitation.
[0080] like Figure 2 As shown, in some embodiments, the material deposition method further comprises:
[0081] Arrange the coating head 20 on the first three-axis motion mechanism 30;
[0082] The coating head 20 is used to coat the solution on the substrate 1 , and the first three-axis motion mechanism 30 is controlled according to the flatness of the substrate 1 to adjust the coating position of the coating head 20 .
[0083] It can be understood that by arranging the coating head 20 on the first three-axis motion mechanism 30, the first three-axis motion mechanism 30 can be used to realize the three-axis movement of the coating head 20, so as to facilitate the control of the coating position of the coating head 20 according to the flatness of the substrate 1, thereby realizing a solution wet film 2 with uniform thickness.
[0084] It should be noted that the first three-axis motion mechanism 30 is a three-axis motion mechanism arranged in the slit coater. The specific type of the first three-axis motion mechanism 30 can be set according to actual needs and is not limited to this. For example, the gantry of the slit coater has built-in X-axis motor, Y-axis motor and Z-axis motor, that is, the first three-axis motion mechanism 30. The X-axis motor, Y-axis motor and Z-axis motor respectively drive the coating head 20 to move in the X, Y and Z axes with an accuracy of 1um-1000um and a movable distance of 1um-1000000um. The control of the three dimensions can be carried out in parallel.
[0085] In the slot coater, the solution may be extruded through the coating head 20 at a speed of 1 ul / min-10000 ul / min.
[0086] like Figure 3 As shown, in some embodiments, the material deposition method further comprises:
[0087] The wind knife 50 is arranged on the second three-axis motion mechanism 60;
[0088] The air knife 50 is used to blow air to the wet film 2 , and the second three-axis motion mechanism 60 is controlled according to the thickness of the corresponding position of the wet film 2 to adjust the blowing position of the air knife 50 .
[0089] It can be understood that by arranging the wind knife 50 on the second three-axis motion mechanism 60, the second three-axis motion mechanism 60 can be used to realize the three-axis movement of the wind knife 50, thereby facilitating the control of the blowing position of the wind knife 50 according to the thickness of the corresponding position of the wet film 2, thereby realizing a dry and wet film 3 with uniform thickness.
[0090] It should be noted that the second three-axis motion mechanism 60 is a three-axis motion mechanism arranged in the wind knife 50 blowing device. The specific type of the second three-axis motion mechanism 60 can be set according to actual needs and is not limited to this. For example, the wind knife 50 is equipped with an X-axis motor, a Y-axis motor and a Z-axis motor, that is, the second three-axis motion mechanism 60. The X-axis motor, the Y-axis motor and the Z-axis motor respectively drive the wind knife 50 to move in the X, Y and Z axes. The accuracy is between 1um-1000um, and the movable distance is between 1um-1000000um. The control of the three dimensions can be carried out in parallel.
[0091] like Figure 3 As shown, in some embodiments, the material deposition method further comprises:
[0092] The wind knife 50 is arranged on the angle adjustment mechanism 70 on the second three-axis motion mechanism 60;
[0093] The angle adjustment mechanism 70 is controlled according to the thickness of the corresponding position of the wet film 2 to adjust the blowing angle of the air knife 50 .
[0094] It can be understood that by arranging the wind knife 50 on the angle adjustment mechanism 70, the angle adjustment mechanism 70 can be used to adjust the angle of the wind knife 50, thereby facilitating controlling the blowing angle of the wind knife 50 according to the thickness of the corresponding position of the wet film 2, thereby achieving a dry and wet film 3 with uniform thickness.
[0095] It should be noted that the angle adjustment mechanism 70 is arranged on the three-axis motion mechanism in the wind knife 50 blowing device. The specific type of the angle adjustment mechanism 70 can be set according to actual needs and is not limited to this. For example, the wind knife 50 is equipped with a rotating motor, that is, the angle adjustment mechanism 70. The rotating motor drives the wind knife 50 to rotate, and the positive and negative rotation angles are positive and negative 90 degrees. Among them, the angle adjustment mechanism 70 cooperates with the second three-axis motion mechanism 60 to realize the movement of the air duct in four dimensions.
[0096] Among them, in the wind knife 50 blowing device, a hose can be used to introduce gas, the gas can be an inert gas or any other mixed gas, and the flow rate of the gas can range from 0.1m / s to 1000m / s, which is not limited.
[0097] The substrate 1 is arranged on a sample stage, and the laser 10, the full-spectrum thin-film interferometer 40, the coating head 20 and the air knife 50 can move relative to the sample stage, or can achieve relative movement through the sample stage.
[0098] In some embodiments, the substance deposition method further comprises:
[0099] When the wet film 2 forms the dry-wet film 3, the thickness of the dry-wet film 3 at different positions is obtained, and the thickness of the dry-wet film 3 is estimated according to the thickness of the dry-wet film 3 at different positions and the proportional model;
[0100] And / or when the dry-wet film 3 forms a dry film, the thickness of the dry film at different positions is obtained.
[0101] It can be understood that the wet film 2 sequentially forms a dry-wet film 3 in the second thickness range and a dry film in the third thickness range, thereby completing the deposition of the solution material on the substrate 1. At the same time, when the wet film 2 forms the dry-wet film 3, the thickness of the dry film is estimated according to the thickness and proportional model of the dry-wet film 3 at different positions, and when the dry-wet film 3 forms the dry film, the thickness of the dry film at different positions is obtained, thereby achieving accurate monitoring of the solution deposition, and facilitating the uniform preparation of the crystalline dry film.
[0102] It should be noted that, in the description of the present disclosure, the terms "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance. In addition, in the description of the present disclosure, unless otherwise specified, the meaning of "plurality" is two or more.
[0103] Any process or method description in a flowchart or otherwise described herein may be understood to represent a module, segment or portion of code that includes one or more executable instructions for implementing the steps of a specific logical function or process, and the scope of the preferred embodiments of the present disclosure includes alternative implementations in which functions may not be performed in the order shown or discussed, including performing functions in a substantially simultaneous manner or in the reverse order depending on the functions involved, which should be understood by those skilled in the art to which the embodiments of the present disclosure belong.
[0104] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present disclosure. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.
[0105] Although the embodiments of the present disclosure have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present disclosure. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present disclosure.
Claims
1. A method for depositing a material on a rough and uneven substrate, characterized in that: include: Obtaining the flatness of the substrate; Coating the solution on the substrate, and controlling the coating position according to the flatness of the substrate, so as to form a solution wet film in a first thickness range on the substrate; Obtaining the thickness of the wet film at different positions; Blowing air to the wet film, and controlling the position, angle and flow rate of the air blowing according to the thickness of the corresponding position of the wet film, so that the wet film forms a dry-wet film in a second thickness range; The dry and wet films are subjected to a crystallization treatment so as to form a dry film having a thickness within a third range.
2. The material deposition method based on a rough and uneven substrate according to claim 1, characterized in that: The step of obtaining the flatness of the substrate comprises: Setting a reference surface, wherein the reference surface and the substrate are arranged opposite to each other; Acquire the collection distance between the reference surface and the substrate at different positions; The flatness of the substrate is obtained according to the multiple collection intervals.
3. The material deposition method based on a rough and uneven substrate according to claim 2, characterized in that: The controlling of the coating position according to the flatness of the substrate comprises: Setting a reference plane of the substrate, and taking the distance between the reference plane and the reference plane as a reference distance; Obtaining a spacing deviation of a corresponding position according to the acquisition spacing and the reference spacing; The coating interval between the solution coating point at the corresponding position and the reference surface is corrected according to the interval deviation.
4. The material deposition method based on a rough and uneven substrate according to claim 3, characterized in that: The method of correcting the coating spacing between the solution coating point at the corresponding position and the reference surface according to the spacing deviation includes: When the collection interval is greater than the reference interval and the interval deviation is negative, reducing the coating interval according to the interval deviation; When the collection pitch is smaller than the reference pitch and the pitch deviation is positive, the coating pitch is increased according to the pitch deviation.
5. The material deposition method based on a rough and uneven substrate according to claim 2, characterized in that: The substance deposition method further comprises: Arrange a laser on the reference surface, and arrange the detection end of the laser and the substrate opposite to each other; The laser is moved to different positions of the reference surface to obtain acquisition intervals between the reference surface and the substrate at different positions.
6. The material deposition method based on a rough and uneven substrate according to claim 2, characterized in that: The substance deposition method further comprises: Arranging a full-spectrum thin-film interferometer on the reference surface, and making the detection end of the full-spectrum thin-film interferometer and the substrate relatively arranged; The full-spectrum thin-film interferometer is moved to different positions of the reference surface to obtain the thickness of the wet film at different positions.
7. The material deposition method based on a rough and uneven substrate according to claim 1, characterized in that: The substance deposition method further comprises: Arranging the coating head on the first three-axis motion mechanism; The solution is coated on the substrate by using the coating head, and the first three-axis motion mechanism is controlled according to the flatness of the substrate to adjust the coating position of the coating head.
8. The material deposition method based on a rough and uneven substrate according to claim 1, characterized in that: The substance deposition method further comprises: Arrange the air knife on the second three-axis motion mechanism; The air knife is used to blow air to the wet film, and the second three-axis motion mechanism is controlled according to the thickness of the corresponding position of the wet film to adjust the blowing position of the air knife.
9. The material deposition method based on a rough and uneven substrate according to claim 8, characterized in that: The substance deposition method further comprises: Arranging the wind knife on the angle adjustment mechanism on the second three-axis motion mechanism; The angle adjustment mechanism is controlled according to the thickness of the corresponding position of the wet film to adjust the blowing angle of the air knife.
10. The material deposition method based on a rough and uneven substrate according to claim 1, characterized in that: The substance deposition method further comprises: When the wet film forms the dry-wet film, obtaining the thickness of the dry-wet film at different positions, and estimating the thickness of the dry film according to the thickness of the dry-wet film at different positions and a proportional model; and / or When the dry film is formed from the dry and wet films, the thickness of the dry film at different positions is obtained.