PTFE base material and shape processing method thereof

Abstract

The invention relates to a PTFE (Polytetrafluoroethylene) base material and a shape processing method thereof. The shape processing method of the PTFE base material comprises the following steps: manufacturing an engineering file of the PTFE base material; determining a first setting interval of a laser energy value and an aperture setting value; according to the corresponding relation among the thickness of the PTFE base material, the laser energy value and the single-time laser emission cutting depth, a laser energy set value is determined in the first setting interval, and a laser emission frequency set value is determined; a laser aperture set value is determined according to the corresponding relation between the aperture set value and the cutting gap; a laser hole center distance set value is determined according to the corresponding relation between a reference ratio and the appearance quality and the laser aperture set value, and the reference ratio is the ratio of the laser hole center distance to the laser aperture; and according to the laser energy set value, the laser aperture set value, the laser hole center distance set value and the laser emission frequency set value, the shape of the PTFE base material is machined. According to the shape machining method for the PTFE base material, the machined PTFE base material is free of burrs, and the machining precision and efficiency are high.

Description

Technical Field

[0001] The invention relates to the technical field of PCB manufacturing, and in particular to a PTFE substrate and a shape processing method thereof. Background Art

[0002] Polytetrafluoroethylene (PTFE), also known as Teflon, commonly known as the "King of Plastics", is a high molecular polymer made by polymerizing tetrafluoroethylene as a monomer. Its chemical formula is (C2F4)n. It has excellent heat and cold resistance and can be used for a long time at -180 to 260ºC.

[0003] At present, 6G antennas and their supporting products are designed and processed with low dielectric constant and low loss PTFE substrates. The processing of PTFE substrates is mainly carried out by CNC (Computer Numerical Control). However, PTFE substrates are thermoplastic materials, and their materials are relatively soft. It is very easy to produce burrs and burrs during CNC machining, especially when the parameters are not optimized enough. It takes a lot of time to clean up the burrs and burrs, which seriously affects the shape processing accuracy and efficiency of the PTFE substrate, and cannot meet the high-precision processing requirements of ±0.05mm for antenna products. Summary of the invention

[0004] Based on this, it is necessary to provide a PTFE substrate and its shape processing method to address the problem that CNC machining seriously affects the shape processing accuracy and efficiency of the PTFE substrate and cannot meet the high-precision processing requirements of ±0.05mm for antenna products.

[0005] A method for processing the shape of a PTFE substrate, comprising: Creating an engineering file for laser contour processing of a PTFE substrate, wherein the engineering file is preset with a laser cutting shape; Determine a first setting interval of laser energy value and an aperture setting value; According to the corresponding relationship between the thickness of the PTFE substrate, the laser energy value and the cutting depth of a single laser shot, a laser energy setting value is determined in the first setting interval, and a laser shot number setting value is determined; Determining a laser aperture setting value according to a corresponding relationship between the aperture setting value and the cutting gap; Determine the laser hole center distance setting value according to the corresponding relationship between the reference ratio and the appearance quality, and the laser aperture setting value, wherein the reference ratio is the ratio of the laser hole center distance to the laser aperture; The PTFE substrate is processed according to the laser cutting shape according to the laser energy setting value, the laser aperture setting value, the laser hole center distance setting value and the laser shot number setting value, wherein the laser energy setting value is less than or equal to 2.1mj, the laser hole center distance setting value is equal to 1 / 3 of the laser aperture, and the laser shot number is 2shot-10shot.

[0006] In the above-mentioned PTFE substrate shape processing method, first, an engineering file for laser shape processing of the PTFE substrate is prepared, and the engineering file presets a laser cutting shape; then, a first setting interval of the laser energy value and an aperture setting value are determined; then, according to the thickness of the PTFE substrate, the laser energy value and the corresponding relationship between the cutting depth of a single laser emission, the laser energy setting value is determined in the first setting interval, and the laser emission number setting value is determined; then, according to the corresponding relationship between the aperture setting value and the cutting gap, the laser aperture setting value is determined; then, according to the corresponding relationship between the reference ratio and the shape quality, and the laser aperture setting value, the laser hole center distance setting value is determined, and the reference ratio is the ratio of the laser hole center distance to the laser aperture; finally, according to the laser energy setting value, the laser aperture setting value, the laser hole center distance setting value and the laser emission number setting value, the PTFE substrate is shape processed according to the laser cutting shape. The above-mentioned PTFE substrate shape processing method can replace the traditional CNC processing method of the PTFE substrate, effectively solve the problem of PTFE substrate shape burrs, and avoid the inefficiency caused by repairing burrs; further, the PTFE substrate processed by the above-mentioned PTFE substrate shape processing method has high shape dimensional accuracy and good consistency, which can meet the high-precision processing requirements of the antenna product PTFE substrate shape dimension of ±0.05mm; further, when the above-mentioned PTFE substrate shape processing method is used for laser cutting of PTFE substrate samples, it can ensure that there is no carbon black residue on the PTFE substrate after cutting, thereby improving the reliability and service life of PCB products.

[0007] In one embodiment, the laser energy value is 1.35mj-2.1mj.

[0008] In one embodiment, the size of the laser aperture is 0.10 mm-0.30 mm, and the size of the laser hole center distance is 0.03 mm-0.10 mm.

[0009] In one embodiment, the size of the laser aperture is 0.12mm-0.13mm, and the size of the laser hole center distance is 0.04mm-0.05mm.

[0010] In one of the embodiments, when the laser energy value is 1.35 mj, the cutting depth of a single laser shot is 0.03 mm to 0.05 mm.

[0011] In one of the embodiments, when the laser energy value is 2.1 mj, the cutting depth of a single laser shot is 0.04 mm to 0.07 mm.

[0012] In one embodiment, the laser type used in the laser processing is a carbon dioxide laser.

[0013] A PTFE substrate is processed by the above-mentioned PTFE substrate shape processing method.

[0014] A PCB processing method using the above-mentioned PTFE substrate shape processing method comprises the following steps: cutting, drilling, dry film pasting, LDI circuit, acid etching, etching line width measurement, film stripping, outer layer etching inspection, ET test, surface silver deposition and laser shape processing; the laser shape processing adopts the shape processing method of the PTFE substrate.

[0015] A PCB is processed by the above-mentioned PCB processing method.

[0016] By applying the above-mentioned PCB processing method, the traditional CNC processing method for PTFE substrates can be replaced, the problem of burrs on the appearance of the PTFE substrate can be effectively solved, and the inefficiency caused by repairing burrs can be avoided; further, the PTFE substrate processed by the above-mentioned PTFE substrate appearance processing method has high appearance dimensional accuracy and good consistency, which can meet the high-precision processing requirements of the appearance dimension of the PTFE substrate of the antenna product of ±0.05mm; further, when the above-mentioned PTFE substrate appearance processing method is used for laser cutting of PTFE substrate samples, it can ensure that there is no carbon black residue on the PTFE substrate after cutting, thereby improving the reliability and service life of PCB products. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 The figure is a schematic flow chart of a method for processing the shape of a PTFE substrate according to an embodiment of the present invention; Figure 2 To adopt Figure 1 Schematic diagram of the appearance of the PTFE substrate processed by the method. DETAILED DESCRIPTION

[0018] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present invention, so the present invention is not limited by the specific embodiments disclosed below.

[0019] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may also be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. In contrast, when an element is referred to as being "directly on" another element, there is no intermediate element. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only."

[0020] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0021] The invention discloses a PTFE substrate and a shape processing method thereof.

[0022] like Figure 1 As shown, the profile processing method of the PTFE substrate comprises the following steps: Step S01: preparing an engineering file for laser contour processing of a PTFE substrate, wherein the engineering file has a preset laser cutting shape.

[0023] In this step, during the circuit board manufacturing process, the PTFE substrate needs to be cut into a preset shape according to customer requirements. Further, the laser cutting shape can be set in the engineering file for laser contour processing of the PTFE substrate.

[0024] Step S02: Determine a first setting interval of laser energy value and an aperture setting value.

[0025] In this step, the laser energy value directly affects the laser contour processing efficiency and processing quality of the PTFE substrate. If the laser energy value is too small, the efficiency of the laser contour processing is too low, which cannot meet the requirements of product production efficiency; if the laser energy value is too high, it will cause carbon black residues in the PTFE substrate, which cannot meet the quality control requirements of the product. According to the characteristics of the PTFE substrate, the first setting interval is predetermined, and the laser energy value within the first setting interval can meet the requirement that the processed PTFE substrate is free of carbon black. The aperture setting value also has a significant effect on the generation of carbon black by the PTFE substrate. In order to ensure that no carbon black is generated, preferably, the aperture setting value is 1.8.

[0026] The size of the aperture setting value directly affects the processing accuracy and effect. The aperture value is the ratio of the lens focal length to the lens aperture diameter, which is used to control the amount of light passing through the lens. The smaller the aperture value, the larger the aperture, the more light enters, and it is suitable for use in low-light environments; the larger the aperture value, the smaller the aperture, the less light enters, and it is suitable for use in well-lit environments.

[0027] Step S03: Determine the laser energy setting value in the first setting interval and determine the laser emission times setting value according to the corresponding relationship between the thickness of the PTFE substrate, the laser energy value and the cutting depth of a single laser emission.

[0028] In this step, under the condition of determining the aperture setting value, there is a corresponding relationship between the laser energy value and the cutting depth of a single laser shot. Generally speaking, the larger the laser energy value, the larger the corresponding single laser shot cutting depth; the smaller the laser energy value, the smaller the corresponding single laser shot cutting depth. In order to improve the laser cutting efficiency of the PTFE substrate, a larger laser energy setting value should be selected in the first setting interval. However, if the laser energy setting value is too large and the thickness of the PTFE substrate is small, it may cause the cutting depth of a single laser shot to be greater than the thickness of the PTFE substrate. Therefore, the laser energy setting value needs to be within the first setting interval, and the corresponding single laser shot cutting depth is not greater than the thickness of the PTFE substrate.

[0029] Furthermore, after the laser energy setting value is determined, the cutting depth of a single laser shot is also determined. At this time, the laser shot number setting value can be determined according to the thickness of the PTFE substrate and the cutting depth of a single laser shot. Specifically, the laser shot number setting value = the thickness of the PTFE substrate / the cutting depth of a single laser shot.

[0030] During the laser cutting process, the laser beam is focused and irradiated onto the surface of the PTFE substrate sample, and the PTFE substrate sample is cut by melting, vaporizing, ablating or igniting a chemical reaction with oxygen. This process can be regarded as a laser emission, that is, a laser beam is emitted on the PTFE substrate sample. In practical applications, in order to complete the cutting of the entire PTFE substrate sample, the laser cutting machine will perform the emission process according to a certain path and strategy until the cutting of the entire PTFE substrate sample is completed.

[0031] Step S04: determining the laser aperture setting value according to the corresponding relationship between the aperture setting value and the cutting gap.

[0032] In this step, there is a corresponding relationship between the aperture setting value and the cutting gap. Further, the theoretical value of the cutting gap = the aperture setting value * the first preset parameter * the second preset parameter; preferably, the first preset parameter is equal to 0.7, the second preset parameter is equal to 100, and the first preset parameter and the second preset parameter can be adjusted according to actual needs.

[0033] The theoretical value of the cutting gap can be determined by the correspondence between the laser setting value and the cutting gap, and the laser aperture setting value can be further determined according to the theoretical value of the cutting gap. Preferably, the laser aperture setting value is equal to the theoretical value of the cutting gap.

[0034] Step S05: determining a laser hole center distance setting value according to a corresponding relationship between a reference ratio and an appearance quality, and the laser aperture setting value, wherein the reference ratio is a ratio of the laser hole center distance to the laser aperture.

[0035] In this step, there is a corresponding relationship between the reference ratio and the appearance quality. Generally speaking, the larger the reference ratio, the smaller the laser hole density, and the worse the appearance quality; the smaller the reference ratio, the larger the laser hole density, and the better the appearance quality. However, if the reference ratio is too small, the laser processing efficiency will be too low.

[0036] When determining the laser hole center distance setting value, first determine the optimal reference ratio, then calculate the product of the optimal reference ratio and the laser aperture, and use the product of the optimal reference ratio and the laser aperture as the laser hole center distance setting value.

[0037] Step S06: Performing contour processing on the PTFE substrate according to the laser cutting shape according to the laser energy setting value, the laser aperture setting value, the laser hole center distance setting value and the laser shot number setting value, wherein the laser energy setting value is less than or equal to 2.1mj, the laser hole center distance setting value is equal to 1 / 3 of the laser aperture, and the laser shot number is 2shot-10shot.

[0038] In this step, after determining the laser energy setting value, the laser aperture setting value, the laser hole center distance setting value and the laser shot number setting value, the laser processing equipment can be controlled by the laser energy setting value, the laser aperture setting value, the laser hole center distance setting value and the laser shot number setting value to perform laser contour processing on the PTFE substrate.

[0039] Furthermore, the laser energy value is set in a range of 1.35 mj-2.1 mj. By setting the laser energy value to 1.35 mj-2.1 mj, it is possible to meet the requirement of no carbon black residue during laser contour processing, and it is helpful to quickly determine the laser energy setting value within the range of 1.35 mj-2.1 mj.

[0040] In one embodiment, the size of the laser aperture is 0.10 mm-0.30 mm, and the size of the laser hole center distance is 0.03 mm-0.10 mm. In another embodiment, the size of the laser aperture is 0.12 mm-0.13 mm, and the size of the laser hole center distance is 0.04 mm-0.05 mm. By determining the setting intervals of the laser aperture and the laser hole center distance, it is beneficial to quickly determine the laser aperture setting value and the laser hole center distance setting value when performing laser contour processing on the PTFE substrate.

[0041] Specifically, when the laser energy value is 1.35mj, the cutting depth of a single laser shot is 0.03mm-0.05mm; when the laser energy value is 2.1mj, the cutting depth of a single laser shot is 0.04mm-0.07mm. The correspondence between the laser energy value and the cutting depth of a single laser shot is helpful to quickly determine the setting value of the number of laser shots when processing the shape of the PTFE substrate, so as to avoid the inability to completely cut the PTFE substrate due to the setting value of the number of laser shots being too small, and to avoid the waste of energy due to the setting value of the number of laser shots being too large.

[0042] The laser type of laser processing can be selected according to actual needs. Preferably, the laser type of laser processing is carbon dioxide laser.

[0043] In the above-mentioned PTFE substrate shape processing method, first, an engineering file for laser shape processing of the PTFE substrate is prepared, and the engineering file presets a laser cutting shape; then, a first setting interval of the laser energy value and an aperture setting value are determined; then, according to the thickness of the PTFE substrate, the laser energy value and the corresponding relationship between the cutting depth of a single laser emission, the laser energy setting value is determined in the first setting interval, and the laser emission number setting value is determined; then, according to the corresponding relationship between the aperture setting value and the cutting gap, the laser aperture setting value is determined; then, according to the corresponding relationship between the reference ratio and the shape quality, and the laser aperture setting value, the laser hole center distance setting value is determined, and the reference ratio is the ratio of the laser hole center distance to the laser aperture; finally, according to the laser energy setting value, the laser aperture setting value, the laser hole center distance setting value and the laser emission number setting value, the PTFE substrate is shape processed according to the laser cutting shape. The above-mentioned PTFE substrate shape processing method can replace the traditional CNC processing method of the PTFE substrate, effectively solve the problem of PTFE substrate shape burrs, and avoid the inefficiency caused by repairing burrs; further, the PTFE substrate processed by the above-mentioned PTFE substrate shape processing method has high shape dimensional accuracy and good consistency, which can meet the high-precision processing requirements of the antenna product PTFE substrate shape dimension of ±0.05mm; further, when the above-mentioned PTFE substrate shape processing method is used for laser cutting of PTFE substrate samples, it can ensure that there is no carbon black residue on the PTFE substrate after cutting, thereby improving the reliability and service life of PCB products.

[0044] like Figure 2 As shown, the present invention further discloses a PTFE substrate, which is processed by the above-mentioned PTFE substrate shape processing method.

[0045] The present invention also discloses a PCB processing method using the above-mentioned PTFE substrate shape processing method, comprising the following steps: cutting, drilling, dry film pasting, LDI circuit, acid etching, etching line width measurement, film stripping, outer layer etching inspection, ET test, surface silver deposition and laser shape processing; the laser shape processing adopts the shape processing method of the PTFE substrate.

[0046] In the cutting step, the PTFE substrate is cut according to the material specifications, dimensions and quantity required by the project. In the drilling step, the PCB is drilled according to the project documents; the main purpose of the drilling operation is to connect the outer layer circuit with the inner layer circuit, and copper is plated in the hole through the electroplating process to achieve electrical connection between the layers of circuits. In the dry film pasting step, dry film is pasted on both sides of the PCB to facilitate LDI pattern transfer; in the LDI circuit step, LDI (Laser Direct Imaging) laser imaging is used for pattern transfer, and the outer layer circuit pattern is obtained after development; in the acid etching step, etching is done for first piece confirmation, the antenna layer is sprayed downward during etching, and the film is not removed after etching, and the line width measuring instrument is used to directly measure the line side etching amount; in the etching line width measurement step, the line width tester is used for measurement to ensure that the engineering compensation value is etched away; in the film removal step, the protective dry film is removed to obtain a complete circuit pattern; in the outer layer etching inspection step, the outer layer circuit is automatically optically inspected; in the ET (Electrical Test) test step, a flying probe tester is used to perform open circuit / short circuit tests on the PCB according to the engineering test file; in the surface silver deposition step, the circuit pad is silvered to provide a solderable surface for the PCB; in the laser contouring step, the PCB is laser contoured using the laser processing file. During the processing process, the first piece confirmation can be further performed to control the processing quality of the antenna product PCB.

[0047] In the above PCB processing method, the laser processing file is first designed by using the laser processing file design method of the PTFE substrate, and then the processes of cutting, drilling, dry film pasting, LDI circuit, acid etching, etching line width measurement, film stripping, outer layer corrosion inspection, ET test, surface silver deposition, laser contour and finished product storage are carried out in sequence. The above PCB processing method can replace the traditional CNC processing method of the PTFE substrate, effectively solve the problem of burr shape of the PTFE substrate, and avoid the low efficiency caused by repairing burrs; further, the PTFE substrate processed by the above PCB processing method has high shape size accuracy and good consistency, which can meet the high-precision processing requirements of the antenna product PCB for the shape size of the PTFE substrate ±0.05mm; further, when the above PCB processing method performs laser cutting on the PTFE substrate sample, it can ensure that there is no carbon black residue on the PTFE substrate after cutting, thereby improving the reliability and service life of the antenna product PCB.

[0048] The present invention also discloses a PCB, which is processed by the above PCB processing method. The processing efficiency of the PCB processed by the above method is high, and the high-precision processing requirement of ±0.05mm can be met, and the PCB product has high reliability and service life.

[0049] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0050] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A method for processing the shape of a PTFE substrate, characterized in that: include: Creating an engineering file for laser contour processing of a PTFE substrate, wherein the engineering file is preset with a laser cutting shape; Determine a first setting interval of laser energy value and an aperture setting value; According to the corresponding relationship between the thickness of the PTFE substrate, the laser energy value and the cutting depth of a single laser shot, a laser energy setting value is determined in the first setting interval, and a laser shot number setting value is determined; Determining a laser aperture setting value according to a corresponding relationship between the aperture setting value and the cutting gap; Determine the laser hole center distance setting value according to the corresponding relationship between the reference ratio and the appearance quality, and the laser aperture setting value, wherein the reference ratio is the ratio of the laser hole center distance to the laser aperture; The PTFE substrate is processed according to the laser cutting shape according to the laser energy setting value, the laser aperture setting value, the laser hole center distance setting value and the laser shot number setting value, wherein the laser energy setting value is less than or equal to 2.1mj, the laser hole center distance setting value is equal to 1 / 3 of the laser aperture, and the laser shot number is 2shot-10shot.

2. The method for processing the shape of a PTFE substrate according to claim 1, wherein: The laser energy value is 1.35mj-2.1mj.

3. The method for processing the shape of a PTFE substrate according to claim 1, characterized in that: The size of the laser aperture is 0.10mm-0.30mm, and the size of the laser hole center distance is 0.03mm-0.10mm.

4. The method for processing the shape of a PTFE substrate according to claim 1, characterized in that: The size of the laser aperture is 0.12mm-0.13mm, and the size of the laser hole center distance is 0.04mm-0.05mm.

5. The method for processing the shape of a PTFE substrate according to claim 2, characterized in that: When the laser energy value is 1.35 mj, the cutting depth of a single laser shot is 0.03 mm to 0.05 mm.

6. The method for processing the shape of a PTFE substrate according to claim 2, characterized in that: When the laser energy value is 2.1 mj, the cutting depth of a single laser shot is 0.04 mm to 0.07 mm.

7. The method for processing the shape of a PTFE substrate according to claim 1, characterized in that: The laser type of the laser processing is a carbon dioxide laser.

8. A PTFE substrate, characterized in that The PTFE substrate is processed by the shape processing method of the PTFE substrate according to any one of claims 1 to 7.

9. A PCB processing method using the PTFE substrate shape processing method according to any one of claims 1 to 7, characterized in that: The following steps are involved: Cutting, drilling, dry film pasting, LDI circuit, acid etching, etching line width measurement, film stripping, outer layer etching inspection, ET testing, surface silver deposition and laser profile processing; The laser contour processing adopts the contour processing method of the PTFE substrate.

10. A PCB, characterized in that: The PCB is processed by the PCB processing method according to claim 9.

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