Self-heating chemical vapor deposition device and manufacturing method of graphene copper wire

By using a self-heating chemical vapor deposition device on copper-based materials to grow graphene, combined with the processes of filling copper materials, cap welding, hot rolling, wire cutting and drawing, the problem of lack of wire preparation technology for graphene copper composite materials is solved, and high-efficiency and mass production of graphene copper wires is achieved.

CN119615128APending Publication Date: 2025-03-14UNIV OF SCI & TECH BEIJING
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Patent Information

Application Number
CN202411784874.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-06
Publication Date
2025-03-14

AI Technical Summary

Technical Problem

There is a lack of process for batching and high-efficiency wire preparation of graphene copper composite materials, resulting in low production efficiency and disorderly arrangement of graphene.

Method used

Graphene is grown on the surface of the copper-based material by self-heating chemical vapor deposition device, and highly conductive graphene copper conductors are prepared by filling copper materials, cap welding, hot rolling, wire cutting and drawing.

Benefits of technology

The batch production and rapid production of graphene copper conductors has been realized, and the conductivity is improved, with a conductivity of 95-115% IACS, which is suitable for aviation aircraft and electronic industry.

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Abstract

The invention discloses a self-heating chemical vapor deposition device and a manufacturing method of a graphene copper conductor, relates to the technical field of composite materials, and aims to solve the problems of low production efficiency and disordered arrangement of graphene in the batch preparation process of the graphene copper conductor preparation process. An induction coil is sleeved on the copper-based material and is used for heating the copper-based material, and two ends of the induction coil are respectively connected with a power supply through connecting wires.
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Description

Technical Field

[0001] The present invention relates to the technical field of composite materials, and in particular to a self-heating chemical vapor deposition device and a method for manufacturing a graphene copper wire. Background Art

[0002] Pure metals have long been considered to have the highest conductivity at room temperature. Since the first official record of the conductivity of copper about 100 years ago, a large number of studies on highly refined copper metal have only increased the conductivity by about 3%. The widely used International Annealed Copper Standard (IACS) records the conductivity of pure copper at room temperature as 5.8×10 7 s / m, among metals, only silver has a better conductivity than copper (about 108% IACS), but its cost is too high, so copper-based materials have always served as the main conductive material.

[0003] In order to improve the conductivity of copper-based materials, the method of preparing high-purity copper by increasing purity, reducing grain boundaries and reducing defects has gradually approached the physical limit, the cost has increased significantly, and the technical requirements have become more and more stringent. The addition of other alloy materials (such as tin, rare earth elements, etc.) also often causes the conductivity to decrease due to process instability or copper-based lattice distortion. There are certain limitations. The use of metallic copper and new materials to prepare ultra-high conductive copper-based composite materials has attracted extensive research.

[0004] Graphene is an allotrope of carbon atoms and a two-dimensional crystalline material. It is the basic single-layer SP of a two-dimensional lattice component. 2 Hybrid (two-dimensional honeycomb structure) carbon atoms. In 2004, British scientists successfully prepared graphene foil for the first time. The carbon atoms inside the foil are all bonded with σ bonds with extremely high bonding strength, and each carbon atom can provide an unbonded free electron. This unique structure determines its high strength and good conductivity. Its strength is as high as 130GPa, and its carrier mobility is 15000cm 2 / (V·s), both of which are the highest among currently known materials. In addition, graphene also has a very high surface area and thermal conductivity, as well as unique properties such as molecular, quantum, and tunneling effects. Due to its special two-dimensional structure and excellent performance, graphene still has good advantages in improving the mechanical properties of materials and maintaining the high electrical and thermal conductivity of copper, making it an excellent reinforcement material for copper-based composite materials. Graphene-enhanced copper-based materials have been used in the automotive and aerospace industries.

[0005] However, there is a lack of processes for batch and high-efficiency preparation of wires from graphene copper composite materials. Because the production efficiency of growing high-quality graphene on copper materials is low, there is a lack of processes for batch preparation of graphene copper wires from graphene copper composite materials, which leads to the problem of batch and high-speed preparation of graphene copper wires being urgently needed to be solved. Therefore, the present invention aims to solve the key problems of low production efficiency and disordered arrangement of graphene in the batch preparation process of graphene copper wires, and proposes a self-heating chemical vapor deposition device and a graphene copper wire integrated manufacturing method, which is conducive to the batch and rapid production of high-conductivity graphene copper wires. Summary of the invention

[0006] The present invention proposes a self-heating chemical vapor deposition device, which includes a hollow copper-based material, an induction coil is sleeved on the copper-based material for heating the copper-based material, and both ends of the induction coil are connected to a power source through connecting wires.

[0007] The present invention is further configured as follows: the number of hollow layers of the copper-based material is 1-100 layers, and the copper-based material is selected to be oxygen-free copper or single crystal copper.

[0008] The present invention also proposes a method for manufacturing a highly conductive graphene copper wire, which comprises the following steps: S1: growing graphene on the surface of the copper-based material by using the self-heating chemical vapor deposition device according to any one of claims 1 to 2 to obtain a hollow graphene copper-based material; S2: Filling the hollow part of the graphene copper-based material in step S1 with copper material, and then capping the graphene copper-based material, and welding and sealing the capping to obtain a graphene copper composite material; S3: The graphene copper composite material is subjected to hot rolling, wire cutting and drawing to obtain a highly conductive graphene copper wire.

[0009] The present invention is further configured as follows: the temperature for growing graphene in step S1 is 1000-1050°C.

[0010] The present invention is further configured as follows: the copper material in step S2 is copper powder, copper particles, copper foil or copper plate, and the copper material is oxygen-free copper or single crystal copper.

[0011] The present invention is further configured as follows: the hot rolling temperature in step S3 is 600-1000°C, the temperature is kept for 10 minutes before each rolling, and the hot rolling mill is immediately sent to carry out the next rolling after the temperature is kept. The hot rolling speed is 0.1-2m / s, and the final thickness after rolling is 20-50% of the original thickness. Each rolling is 0.5mm to obtain a graphene copper plate.

[0012] The present invention is further configured as follows: in step S3, multiple drawing processes are required, and the deformation rate of each drawing process is 1%; until the highly conductive graphene copper wire of the required diameter is obtained.

[0013] The beneficial effects of the present invention are:

[0014] 1. The manufacturing method disclosed in the present invention has reasonable process and integrates the production from growing graphene to preparing graphene copper wire, thereby improving production efficiency, reducing production costs, and realizing mass production.

[0015] 2. The wire produced by the manufacturing method disclosed in the present invention has high conductivity, and its conductivity can reach 95-115% IACS. According to the national standard for electrical round copper wire "GB / T3953-2024", the conductivity of traditional TY wires is required to be greater than 96% IACS, and the conductivity of TR wires is required to be greater than 100.9% IACS. It has good application prospects in the fields of aviation and electronics industries. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 The process flow chart of the present invention is shown.

[0017] Figure 2 A structural diagram of Example 1 is shown. DETAILED DESCRIPTION

[0018] Those skilled in the art can refer to the content of this article and appropriately improve the process parameters. It is particularly important to point out that all similar replacements and modifications are obvious to those skilled in the art, and they are all considered to be included in the present invention. The methods and applications of the present invention have been described through preferred embodiments, and relevant personnel can modify or appropriately change and combine the methods and applications described herein without departing from the content, spirit and scope of the present invention to implement and apply the technology of the present invention.

[0019] Example 1

[0020] The present invention proposes a self-heating chemical vapor deposition device, including a hollow copper-based material, a spiral induction coil is sleeved on the copper-based material, two ends of the induction coil are connected to a power supply, and the positive and negative poles of the power supply are respectively connected to the two ends of the induction coil to supply power to the induction coil, thereby achieving the purpose of heating the copper-based material through the induction coil.

[0021] The number of hollow layers of the copper-based material is 1-100, and the copper-based material is selected to be oxygen-free copper or single crystal copper. Because the hollow copper-based material has good electrical conductivity, direct wire heating can also be used. Figure 2Direct heating can directly connect the positive and negative poles of the power supply to the copper-based material. The heating rates of the two heating methods far exceed those of traditional chemical deposition vapor deposition tube furnaces, so they can greatly improve the efficiency of growing graphene.

[0022] Example 2

[0023] The present invention also provides a method for manufacturing a highly conductive graphene copper wire, which comprises the following steps: S1: growing graphene on the surface of the copper-based material by using the self-heating chemical vapor deposition device as described in Example 1 to obtain a hollow graphene copper-based material; S2: Filling the hollow part of the graphene copper-based material in step S1 with copper material, and then capping the graphene copper-based material, and welding and sealing the capping to obtain a graphene copper composite material; S3: The graphene copper composite material is subjected to hot rolling, wire cutting and drawing to obtain a highly conductive graphene copper wire.

[0024] The graphene growing temperature in step S1 is 1000-1050°C.

[0025] The copper material in step S2 is copper powder, copper particles, copper foil or copper plate, and the copper material is oxygen-free copper or single crystal copper.

[0026] The hot rolling temperature in step S3 is 600-1000°C, and the sheet is kept warm for 10 minutes before each rolling. After the insulation is completed, the sheet is immediately sent to the hot rolling mill for the next rolling. The hot rolling speed is 0.1-2m / s, and the final thickness after rolling is 20-50% of the original thickness. Each rolling is 0.5mm to obtain a graphene copper plate.

[0027] In step S3, multiple drawing processes are required, and the deformation rate of each drawing process is 1% until the highly conductive graphene copper wire of the required diameter is obtained.

[0028] Example 3

[0029] The highly conductive graphene copper wire was prepared by the manufacturing method disclosed in Example 2, wherein the copper-based material was composed of a hollow copper plate, wherein the number of hollow layers was 10, and the copper-based material was oxygen-free copper. The specific preparation process was as follows:

[0030] S1: The hollow copper-based material is uniformly heated by an induction coil to 1000°C, which is a temperature for growing graphene by chemical vapor deposition, and a mixed gas of methane and hydrogen is introduced to grow graphene on the surface of the hollow copper-based material to obtain a hollow graphene copper-based material.

[0031] S2: Filling the hollow part of the graphene copper-based material with copper particles and copper powder materials, and then capping the graphene copper-based material and sealing it by welding to obtain a graphene copper composite material.

[0032] S3: The graphene copper composite material is subjected to hot rolling, wire cutting and drawing to obtain a highly conductive graphene copper wire. The hot rolling temperature is 950°C, and the material is kept warm for 10 minutes before each rolling. After the insulation is completed, it is immediately sent to the hot rolling mill for the next rolling. The hot rolling speed is 0.3m / s. The final thickness after rolling is 30% of the original thickness. Each rolling is 0.5mm to obtain a rolled graphene copper plate. The graphene copper plate is wire-cut on the substrate to obtain a graphene copper strip. The graphene copper strip is used as a raw material and subjected to multiple drawing processes. The deformation rate of each drawing process is 1%, and a highly conductive graphene copper wire with a diameter of 0.5mm is drawn.

[0033] The conductivity of the prepared high-conductivity graphene copper wire was tested according to the four-probe method, and its conductivity was measured to be 108.4% IACS.

[0034] Example 4

[0035] The highly conductive graphene copper wire is prepared by the manufacturing method disclosed in Example 2, wherein the copper-based material is composed of a hollow copper plate, wherein the number of hollow layers is 1, and the copper-based material is oxygen-free copper. The specific preparation process is as follows:

[0036] S1: The hollow copper-based material is uniformly heated by an induction coil to a temperature of 1050° C. for growing graphene by chemical vapor deposition, and a mixed gas of methane and hydrogen is introduced to grow graphene on the surface of the hollow copper-based material to obtain a hollow graphene copper-based material.

[0037] S2: Filling the hollow part of the graphene copper-based material with copper particles and copper powder materials, and then capping the graphene copper-based material and sealing it by welding to obtain a graphene copper composite material.

[0038] S3: The graphene copper composite material is subjected to hot rolling, wire cutting and drawing to obtain a highly conductive graphene copper wire. The hot rolling temperature is 900°C, and the heat preservation is 10 minutes before each rolling. After the heat preservation, it is immediately sent to the hot rolling mill for the next rolling. The hot rolling speed is 0.5m / s. The final thickness after rolling is 50% of the original thickness. Each rolling is 0.5mm to obtain a rolled graphene copper plate. The graphene copper plate is wire-cut on the substrate to obtain a graphene copper strip. The graphene copper strip is used as a raw material and subjected to multiple drawing processes. The deformation rate of each drawing process is 1%, and a highly conductive graphene copper wire with a diameter of 0.5mm is drawn.

[0039] The conductivity of the prepared high-conductivity graphene copper wire was tested according to the four-probe method, and its conductivity was measured to be 102.8% IACS.

[0040] Example 5

[0041] The manufacturing method disclosed in Example 2 is used to prepare a highly conductive graphene copper wire, wherein the copper-based material is composed of a hollow copper plate, wherein the number of hollow layers is 20, and the copper-based material is oxygen-free copper. The specific preparation process is as follows:

[0042] S1: The hollow copper-based material is uniformly heated by an induction coil to a temperature of 1025° C. for growing graphene by chemical vapor deposition, and a mixed gas of methane and hydrogen is introduced to grow graphene on the surface of the hollow copper-based material to obtain a hollow graphene copper-based material.

[0043] S2: Filling the hollow part of the graphene copper-based material with copper particles and copper powder materials, and then capping the graphene copper-based material and sealing it by welding to obtain a graphene copper composite material.

[0044] S3: The graphene copper composite material is subjected to hot rolling, wire cutting and drawing to obtain a highly conductive graphene copper wire. The hot rolling temperature is 950°C, and the material is kept warm for 10 minutes before each rolling. After the insulation is completed, it is immediately sent to the hot rolling mill for the next rolling. The hot rolling speed is 0.5m / s. The final thickness after rolling is 30% of the original thickness. Each rolling is 0.5mm to obtain a rolled graphene copper plate. The graphene copper plate is wire-cut on the substrate to obtain a graphene copper strip. The graphene copper strip is used as a raw material and subjected to multiple drawing processes. The deformation rate of each drawing process is 1%, and a highly conductive graphene copper wire with a diameter of 1mm is drawn.

[0045] The conductivity of the prepared high-conductivity graphene copper wire was tested according to the four-probe method, and its conductivity was measured to be 107.4% IACS.

[0046] Example 6

[0047] The highly conductive graphene copper wire was prepared by the manufacturing method disclosed in Example 2, wherein the copper-based material was composed of a hollow copper plate, wherein the number of hollow layers was 10, and the copper-based material was oxygen-free copper. The specific preparation process was as follows:

[0048] S1: The hollow copper-based material is uniformly heated by an induction coil to a temperature of 1025° C. for growing graphene by chemical vapor deposition, and a mixed gas of methane and hydrogen is introduced to grow graphene on the surface of the hollow copper-based material to obtain a hollow graphene copper-based material.

[0049] S2: Filling the hollow part of the graphene copper-based material with copper particles and copper powder materials, and then capping the graphene copper-based material and sealing it by welding to obtain a graphene copper composite material.

[0050] S3: The graphene copper composite material is subjected to hot rolling, wire cutting and drawing to obtain a highly conductive graphene copper wire. The hot rolling temperature is 600°C, and the heat preservation is 10 minutes before each rolling. After the heat preservation, it is immediately sent to the hot rolling mill for the next rolling. The hot rolling speed is 1m / s. The final thickness after rolling is 20% of the original thickness. Each rolling is 0.5mm to obtain a rolled graphene copper plate. The graphene copper plate is wire-cut on the substrate to obtain a graphene copper strip. The graphene copper strip is used as a raw material and subjected to multiple drawing processes. The deformation rate of each drawing process is 1%, and a highly conductive graphene copper wire with a diameter of 0.5mm is drawn.

[0051] The conductivity of the prepared high-conductivity graphene copper wire was tested according to the four-probe method, and its conductivity was measured to be 98.3% IACS.

[0052] Example 7

[0053] The highly conductive graphene copper wire was prepared by the manufacturing method disclosed in Example 2, wherein the copper-based material was composed of a hollow copper plate, wherein the number of hollow layers was 10, and the copper-based material was oxygen-free copper. The specific preparation process was as follows:

[0054] S1: The hollow copper-based material is uniformly heated by an induction coil to a temperature of 1025° C. for growing graphene by chemical vapor deposition, and a mixed gas of methane and hydrogen is introduced to grow graphene on the surface of the hollow copper-based material to obtain a hollow graphene copper-based material.

[0055] S2: Filling the hollow part of the graphene copper-based material with copper particles and copper powder materials, and then capping the graphene copper-based material and sealing it by welding to obtain a graphene copper composite material.

[0056] S3: The graphene copper composite material is subjected to hot rolling, wire cutting and drawing to obtain a highly conductive graphene copper wire. The hot rolling temperature is 1000°C, and the heat preservation is 10 minutes before each rolling. After the heat preservation, it is immediately sent to the hot rolling mill for the next rolling. The hot rolling speed is 0.5m / s. The final thickness after rolling is 50% of the original thickness. Each rolling is 0.5mm to obtain a rolled graphene copper plate. The graphene copper plate is wire-cut on the substrate to obtain a graphene copper strip. The graphene copper strip is used as a raw material and subjected to multiple drawing processes. The deformation rate of each drawing process is 1%, and a highly conductive graphene copper wire with a diameter of 0.5mm is drawn.

[0057] The conductivity of the prepared high-conductivity graphene copper wire was tested according to the four-probe method, and its conductivity was measured to be 105.2% IACS.

[0058] Example 8

[0059] The highly conductive graphene copper wire was prepared by the manufacturing method disclosed in Example 2, wherein the copper-based material was composed of a hollow copper plate, wherein the number of hollow layers was 30, and the copper-based material was oxygen-free copper. The specific preparation process was as follows:

[0060] S1: The hollow copper-based material is uniformly heated by an induction coil to a temperature of 1010° C. for growing graphene by chemical vapor deposition, and a mixed gas of methane and hydrogen is introduced to grow graphene on the surface of the hollow copper-based material to obtain a hollow graphene copper-based material.

[0061] S2: Filling the hollow part of the graphene copper-based material with copper particles and copper powder materials, and then capping the graphene copper-based material and sealing it by welding to obtain a graphene copper composite material.

[0062] S3: The graphene copper composite material is subjected to hot rolling, wire cutting and drawing to obtain a highly conductive graphene copper wire. The hot rolling temperature is 900°C, and the heat preservation is 10 minutes before each rolling. After the heat preservation, it is immediately sent to the hot rolling mill for the next rolling. The hot rolling speed is 0.5m / s. The final thickness after rolling is 30% of the original thickness. Each rolling is 0.5mm to obtain a rolled graphene copper plate. The graphene copper plate is wire-cut on the substrate to obtain a graphene copper strip. The graphene copper strip is used as a raw material and subjected to multiple drawing processes. The deformation rate of each drawing process is 1%, and a highly conductive graphene copper wire with a diameter of 1mm is drawn.

[0063] The conductivity of the prepared high-conductivity graphene copper wire was tested according to the four-probe method, and its conductivity was measured to be 103.2% IACS.

[0064] Example 9

[0065] The highly conductive graphene copper wire was prepared by the manufacturing method disclosed in Example 2, wherein the copper-based material was composed of a hollow copper plate, wherein the number of hollow layers was 5, and the copper-based material was oxygen-free copper. The specific preparation process was as follows:

[0066] S1: The hollow copper-based material is uniformly heated by an induction coil to a temperature of 1010° C. for growing graphene by chemical vapor deposition, and a mixed gas of methane and hydrogen is introduced to grow graphene on the surface of the hollow copper-based material to obtain a hollow graphene copper-based material.

[0067] S2: Filling the hollow part of the graphene copper-based material with copper particles and copper powder materials, and then capping the graphene copper-based material and sealing it by welding to obtain a graphene copper composite material.

[0068] S3: The graphene copper composite material is subjected to hot rolling, wire cutting and drawing to obtain a highly conductive graphene copper wire. The hot rolling temperature is 900°C, and the heat preservation is 10 minutes before each rolling. After the heat preservation, it is immediately sent to the hot rolling mill for the next rolling. The hot rolling speed is 0.5m / s. The final thickness after rolling is 30% of the original thickness. Each rolling is 0.5mm to obtain a rolled graphene copper plate. The graphene copper plate is wire-cut on the substrate to obtain a graphene copper strip. The graphene copper strip is used as a raw material and subjected to multiple drawing processes. The deformation rate of each drawing process is 1%, and a highly conductive graphene copper wire with a diameter of 0.5mm is drawn.

[0069] The conductivity of the prepared high-conductivity graphene copper wire was tested according to the four-probe method, and its conductivity was measured to be 107.5% IACS.

[0070] Example 10

[0071] The highly conductive graphene copper wire was prepared by the manufacturing method disclosed in Example 2, wherein the copper-based material was composed of a hollow copper plate, wherein the number of hollow layers was 10, and the copper-based material was oxygen-free copper. The specific preparation process was as follows:

[0072] S1: The hollow copper-based material is uniformly heated by an induction coil to a temperature of 1015° C. for growing graphene by chemical vapor deposition, and a mixed gas of methane and hydrogen is introduced to grow graphene on the surface of the hollow copper-based material to obtain a hollow graphene copper-based material.

[0073] S2: Filling the hollow part of the graphene copper-based material with copper particles and copper powder materials, and then capping the graphene copper-based material and sealing it by welding to obtain a graphene copper composite material.

[0074] S3: The graphene copper composite material is subjected to hot rolling, wire cutting and drawing to obtain a highly conductive graphene copper wire. The hot rolling temperature is 800°C, and the heat preservation is 10 minutes before each rolling. After the heat preservation, it is immediately sent to the hot rolling mill for the next rolling. The hot rolling speed is 0.5m / s. The final thickness after rolling is 30% of the original thickness. Each rolling is 0.5mm to obtain a rolled graphene copper plate. The graphene copper plate is wire-cut on the substrate to obtain a graphene copper strip. The graphene copper strip is used as a raw material and subjected to multiple drawing processes. The deformation rate of each drawing process is 1%, and a highly conductive graphene copper wire with a diameter of 1mm is drawn.

[0075] The conductivity of the prepared high-conductivity graphene copper wire was tested according to the four-probe method, and its conductivity was measured to be 104.3% IACS.

[0076] Embodiment 11

[0077] The highly conductive graphene copper wire was prepared by the manufacturing method disclosed in Example 2, wherein the copper-based material was composed of a hollow copper plate, wherein the number of hollow layers was 10, and the copper-based material was oxygen-free copper. The specific preparation process was as follows:

[0078] S1: The hollow copper-based material is uniformly heated by an induction coil to a temperature of 1015° C. for growing graphene by chemical vapor deposition, and a mixed gas of methane and hydrogen is introduced to grow graphene on the surface of the hollow copper-based material to obtain a hollow graphene copper-based material.

[0079] S2: Filling the hollow part of the graphene copper-based material with copper particles and copper powder materials, and then capping the graphene copper-based material and sealing it by welding to obtain a graphene copper composite material.

[0080] S3: The graphene copper composite material is subjected to hot rolling, wire cutting and drawing to obtain a highly conductive graphene copper wire. The hot rolling temperature is 1000°C, and the heat preservation is 10 minutes before each rolling. After the heat preservation, it is immediately sent to the hot rolling mill for the next rolling. The hot rolling speed is 0.1m / s. The final thickness after rolling is 30% of the original thickness. Each rolling is 0.5mm to obtain a rolled graphene copper plate. The graphene copper plate is wire-cut on the substrate to obtain a graphene copper strip. The graphene copper strip is used as a raw material and subjected to multiple drawing processes. The deformation rate of each drawing process is 1%, and a highly conductive graphene copper wire with a diameter of 0.5mm is drawn.

[0081] The conductivity of the prepared high-conductivity graphene copper wire was tested according to the four-probe method, and its conductivity was measured to be 104.6% IACS.

[0082] Example 12

[0083] The highly conductive graphene copper wire was prepared by the manufacturing method disclosed in Example 2, wherein the copper-based material was composed of a hollow copper plate, wherein the number of hollow layers was 10, and the copper-based material was oxygen-free copper. The specific preparation process was as follows:

[0084] S1: The hollow copper-based material is uniformly heated by an induction coil to a temperature of 1015° C. for growing graphene by chemical vapor deposition, and a mixed gas of methane and hydrogen is introduced to grow graphene on the surface of the hollow copper-based material to obtain a hollow graphene copper-based material.

[0085] S2: Filling the hollow part of the graphene copper-based material with copper particles and copper powder materials, and then capping the graphene copper-based material and sealing it by welding to obtain a graphene copper composite material.

[0086] S3: The graphene copper composite material is subjected to hot rolling, wire cutting and drawing to obtain a highly conductive graphene copper wire. The hot rolling temperature is 800°C, and the heat preservation is 10 minutes before each rolling. After the heat preservation, it is immediately sent to the hot rolling mill for the next rolling. The hot rolling speed is 2m / s. The final thickness after rolling is 30% of the original thickness. Each rolling is 0.5mm to obtain a rolled graphene copper plate. The graphene copper plate is wire-cut on the substrate to obtain a graphene copper strip. The graphene copper strip is used as a raw material and subjected to multiple drawing processes. The deformation rate of each drawing process is 1%, and a highly conductive graphene copper wire with a diameter of 0.5mm is drawn.

[0087] The conductivity of the prepared high-conductivity graphene copper wire was tested according to the four-probe method, and its conductivity was measured to be 101.7% IACS.

[0088] The data of Examples 3-12 are shown in Table 1: Table 1

[0089] In summary, the manufacturing method disclosed in the present invention has a reasonable process, and the production from growing graphene to preparing graphene copper wire is integrated, which improves production efficiency, reduces production costs, and can achieve mass production. The wire produced by the manufacturing method disclosed in the present invention has high conductivity, and its conductivity can reach 95-115% IACS. According to the national standard for electrical round copper wire "GB / T3953-2024", the conductivity of traditional TY wires is required to be greater than 96% IACS, and the conductivity of TR wires is required to be greater than 100.9% IACS. It has good application prospects in the fields of aviation aircraft and electronics industry.

[0090] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention. These improvements and modifications should also be within the scope of protection of the present invention.

Claims

1. A self-heating chemical vapor deposition device, characterized in that: The invention comprises a hollow copper-based material, wherein an induction coil is sleeved on the copper-based material for heating the copper-based material, and two ends of the induction coil are respectively connected to a power source through connecting wires.

2. The self-heating chemical vapor deposition device according to claim 1, characterized in that: The number of hollow layers of the copper-based material is 1-100, and the copper-based material is selected to be oxygen-free copper or single crystal copper.

3. A method for manufacturing a highly conductive graphene copper wire, characterized in that: The following steps are included: S1: growing graphene on the surface of the copper-based material by using the self-heating chemical vapor deposition device according to any one of claims 1 to 2 to obtain a hollow graphene copper-based material; S2: Filling the hollow part of the graphene copper-based material in step S1 with copper material, and then capping the graphene copper-based material, and welding and sealing the capping to obtain a graphene copper composite material; S3: The graphene copper composite material is subjected to hot rolling, wire cutting and drawing to obtain a highly conductive graphene copper wire.

4. The method for manufacturing a highly conductive graphene copper wire according to claim 3, characterized in that: The temperature for growing graphene in step S1 is 1000-1050°C.

5. The method for manufacturing a highly conductive graphene copper wire according to claim 3, characterized in that: The copper material in step S2 is copper powder, copper particles, copper foil or copper plate, and the copper material is oxygen-free copper or single crystal copper.

6. The method for manufacturing highly conductive graphene copper conductor according to claim 3, characterized in that: The hot rolling temperature in step S3 is 600-1000°C, and the heat preservation is 10 minutes before each rolling. After the heat preservation, it is immediately sent to the hot rolling mill for the next rolling. The hot rolling speed is 0.1-2m / s. The final thickness after rolling is 20-50% of the original thickness. Each rolling is 0.5mm to obtain a graphene copper plate.

7. The method for manufacturing a highly conductive graphene copper conductor according to claim 3, characterized in that: In step S3, multiple drawing processes are required, and the deformation rate of each drawing process is 1%; until the highly conductive graphene copper wire of the required diameter is obtained.

Citation Information

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