Radio frequency electrode simulation method and device, computer device and storage medium

Abstract

The application relates to a radio frequency electrode simulation method and device, computer equipment and a storage medium. The method is applied to a periodic electrode, and the method comprises the following steps: establishing a three-dimensional electrode model according to the type of a radio frequency electrode that needs to be simulated; establishing a simulation model according to the three-dimensional electrode model; performing simulation according to the simulation model and a first formula, and obtaining a plurality of design parameter groups; and obtaining a simulation result of the radio frequency electrode that needs to be simulated according to the plurality of design parameter groups, the first formula and a screening condition. The three-dimensional electrode model comprises boundary conditions and a preset number of periodic electrodes, and the preset number of periods is one period or one-half of a period. The application can improve the simulation speed.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of modulator, in particular to a radio frequency electrode simulation method and device, computer equipment and storage medium. BACKGROUND

[0002] In the field of optical communication and optical information processing, the modulator is a key component to realize signal coding to the optical wave. The key of the modulator design is the design of high-speed radio frequency electrode, because the bandwidth and high-speed characteristics of the modulator are completely determined by the electrode. In the electrode design, electrode simulation is particularly important.

[0003] Among various electrode design schemes, periodic electrode is favored due to its design flexibility. Periodic electrode can reduce radio frequency loss while maintaining small electrode spacing to achieve efficient modulation, overcoming the voltage bandwidth limitation in lithium niobate modulator.

[0004] In the prior art, the design and simulation of periodic electrode depend on two methods, namely analytical expression method and S parameter method, but these methods have significant defects.

[0005] In the analytical expression method, the expression of capacitance is determined by using conformal mapping to determine part of the capacitance, which is not suitable for complex electrode shape. At the same time, due to the skin effect, the expressions of resistance and inductance are not accurate at high frequencies. In the S parameter method, the S parameter calculation of periodic electrode needs to simulate a complete long electrode, such as a 1000 micrometer long electrode. Therefore, this method requires huge computational overhead. Especially when the modulation frequency exceeds 100GHz, the grid is divided more finely, and this computational overhead becomes more serious.

[0006] It can be seen that in the prior art, the simulation method is complex, the system resource consumption is large, and the simulation speed is slow. SUMMARY

[0007] In order to solve the above technical problems or at least partially solve the above technical problems, the present application provides a radio frequency electrode simulation method, device, computer equipment and storage medium.

[0008] In a first aspect, the present application provides a radio frequency electrode simulation method, which is applied to a periodic electrode, and the method comprises:

[0009] According to the type of the radio frequency electrode to be simulated, a three-dimensional electrode model is established;

[0010] According to the three-dimensional electrode model, a simulation model is established;

[0011] According to the simulation model and a first formula, simulation is performed to obtain a plurality of design parameter groups;

[0012] According to the multiple design parameter groups, the first formula and a screening condition, a simulation result of the radio frequency electrode to be simulated is obtained.

[0013] The three-dimensional electrode model includes boundary conditions and a preset number of periodic electrodes, and the preset number of periods is one period or half a period.

[0014] Optionally, if the type of the radio frequency electrode to be simulated is an antisymmetric electrode, the three-dimensional electrode model includes:

[0015] four periodic boundary conditions, two PEC boundary conditions and half a period of electrodes, and the electrode simulation area of the simulation model corresponding to the antisymmetric electrode is half a period of electrodes;

[0016] If the type of the radio frequency electrode to be simulated is a symmetric electrode, the three-dimensional electrode model includes:

[0017] four periodic boundary conditions, two PMC boundary conditions and half a period of electrodes, and the electrode simulation area of the simulation model is half a period of electrodes, and the electrode simulation area of the simulation model corresponding to the symmetric electrode is half a period of electrodes;

[0018] If the type of the radio frequency electrode to be simulated is an asymmetric electrode, the three-dimensional electrode model includes:

[0019] six periodic boundary conditions and one period of electrodes, and the electrode simulation area of the simulation model corresponding to the asymmetric electrode is one period of electrodes.

[0020] Optionally, the three-dimensional electrode model is established according to the type of the radio frequency electrode to be simulated, which includes:

[0021] According to the three-dimensional electrode model and the material of the radio frequency electrode to be simulated, a partition of the electrode simulation area is obtained;

[0022] The material parameters of each partition are obtained.

[0023] According to the partition and the material parameters of the partition, the equivalent parameters of each partition are obtained.

[0024] According to the boundary surface of the three-dimensional electrode model, the boundary conditions are obtained.

[0025] According to the equivalent parameters of the partition and the boundary conditions, the three-dimensional electrode model is established.

[0026] Optionally, the partition of the electrode simulation area includes a PN junction and / or a thin layer partition,

[0027] The equivalent parameters of each of the sub-zones are obtained, including:

[0028] The equivalent parameters of the PN junction are obtained, and / or the equivalent parameters of the thin layer sub-zone are obtained;

[0029] The equivalent parameters of the PN junction are obtained, and / or the equivalent parameters of the thin layer sub-zone are obtained;

[0030] The conductivity σ of the equivalent area of the N++ sub-zone of the PN junction is NN :

[0031]

[0032] The conductivity σ of the equivalent area of the P++ sub-zone of the PN junction is PP :

[0033]

[0034] wherein R NNs is the sheet resistance of the N++ sub-zone of the PN junction, t NN is the thickness of the N++ sub-zone of the PN junction, R PPs is the sheet resistance of the P++ sub-zone of the PN junction, t PP is the thickness of the P++ sub-zone of the PN junction;

[0035] The dielectric constant ε of the equivalent area of the PN sub-zone of the PN junction is PN :

[0036]

[0037] The N conductivity σ of the equivalent area of the PN sub-zone of the PN junction is N :

[0038]

[0039] The P conductivity σ of the equivalent area of the PN sub-zone of the PN junction is P :

[0040]

[0041] wherein w PN is the PN junction depletion region width, C PN is the PN junction capacitance, t s is the thickness of the converted equivalent radio frequency material, L s is the length extending in the direction perpendicular to the PN junction cross section set in the semiconductor simulation, w N is the width of the remaining area of the N region of the PN junction excluding the depletion region, R N is the N region resistance of the PN junction, w PR is the width of the remaining region of the depletion region of the P region of the PN junction P R is the resistance of the P region of the PN junction.

[0042] Optionally, the obtaining the equivalent parameters of the thin layer sub-region comprises:

[0043] converting the volume integral of the thin layer sub-region into an area integral;

[0044] The conversion of the volume integral of the thin layer sub-region into an area integral is as follows:

[0045]

[0046] where k0 is the vacuum wave vector, w is the trial function of u, u is the Bloch mode field of the electric field, ε re ε is the equivalent permittivity distribution of the material r σ is the conductivity distribution of the material, and ω rf is the angular frequency of the radio frequency, ε0 is the vacuum permittivity, i is the imaginary unit, Ω represents the thin layer sub-region, S represents the bottom surface of the thin layer sub-region, t S (x, z) is the thickness distribution of the thin layer sub-region, ε is the permittivity of silicon dioxide, dV represents the volume differential of the thin layer sub-region, (x, z) is the x and z coordinates in the xyz coordinate system.

[0047] Optionally, the simulation according to the simulation model and the first formula to obtain a plurality of design parameter groups comprises:

[0048] obtaining a plurality of electrode size groups;

[0049] According to the plurality of electrode size groups, the simulation model and the first formula, calculating the design parameter group corresponding to each electrode size group;

[0050] The design parameter group comprises: periodic electrode phase refractive index n r , periodic radio frequency electrode characteristic impedance Z c , and electrode loss α.

[0051] Optionally, the screening condition is:

[0052] The periodic radio frequency electrode characteristic impedance Z c is within a predetermined range, and the periodic radio frequency electrode phase refractive index n r is equal to the group refractive index n g of the optical waveguide.

[0053] The simulation result of the radio frequency electrode to be simulated is obtained according to the plurality of design parameter groups, the first formula and the screening condition, comprising:

[0054] obtain the design parameter group satisfying the screening condition as a candidate design parameter group;

[0055] from the candidate design parameter group, select the one with the minimum electrode loss α as the simulation result.

[0056] In a second aspect, a radio frequency electrode simulation device is provided, and the device comprises:

[0057] an electrode model unit configured to establish a three-dimensional electrode model according to a type of a radio frequency electrode to be simulated;

[0058] a simulation model unit configured to establish a simulation model according to the three-dimensional electrode model;

[0059] a parameter unit configured to obtain a plurality of design parameter groups according to the simulation model and a first formula;

[0060] a simulation unit configured to obtain a simulation result of the radio frequency electrode to be simulated according to the plurality of design parameter groups, the first formula and a screening condition;

[0061] wherein the three-dimensional electrode model comprises a boundary condition and a preset number of periodic electrodes, and the preset number of periods is one period or half a period.

[0062] In a third aspect, a computer device is provided, which comprises a memory, a processor and a computer program stored in the memory and executable on the processor, and the processor implements the method according to any one of the above aspects when executing the computer program.

[0063] In a fourth aspect, a computer readable storage medium is provided, which stores a computer program, and the computer program is executable on a processor to implement the method according to any one of the above aspects.

[0064] The application provides a radio frequency electrode simulation method and device, computer equipment and a storage medium. The method is applied to a periodic electrode, and the method comprises the following steps: establishing a three-dimensional electrode model according to the type of a radio frequency electrode to be simulated; establishing a simulation model according to the three-dimensional electrode model; performing simulation according to the simulation model and a first formula, and obtaining a plurality of design parameter groups; and obtaining a simulation result of the radio frequency electrode to be simulated according to the plurality of design parameter groups, the first formula and a screening condition. The three-dimensional electrode model comprises a boundary condition and a preset number of periodic electrodes, and the preset number of periods is one period or half a period. The method of the application embodiment establishes a simulation model according to an electrode model, and different types of electrodes correspond to different electrode models and simulation models. For antisymmetric electrodes and symmetric electrodes, the simulation area can be reduced to half a period of the electrode, and for asymmetric electrodes, the simulation area can also be reduced to one period of the electrode. The method of the application can save subsequent resource consumption, and can improve the simulation speed because the area to be simulated is reduced to half a period or one period of the electrode. BRIEF DESCRIPTION OF DRAWINGS

[0065] The accompanying drawings, which are incorporated herein and form a part of the specification, illustrate embodiments consistent with the present application and, together with the description, further serve to explain the principles of the application.

[0066] In order to more clearly illustrate the technical solutions in the embodiments of the application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, for those skilled in the field, other drawings can also be obtained based on these drawings without any creative work.

[0067] Figure 1 Fig. 1 shows an application environment diagram of the radio frequency electrode simulation method in the embodiment of the application;

[0068] Figure 2 Fig. 2 shows a flowchart of the radio frequency electrode simulation method in the embodiment of the application;

[0069] Figure 3 Fig. 3 shows a schematic diagram of a three-dimensional electrode model of an antisymmetric electrode in the embodiment of the application;

[0070] Figure 4 Fig. 4 shows a schematic diagram of a three-dimensional electrode model of a symmetric electrode in the embodiment of the application;

[0071] Figure 5 Fig. 5 shows a two-dimensional cross-sectional schematic diagram of an antisymmetric electrode in the embodiment of the application;

[0072] Figure 6 Fig. 6 shows a schematic diagram of a simulation model of a PN junction in the embodiment of the application;

[0073] Figure 7 Fig. 2 shows a two-dimensional cross-sectional schematic view of an electrode including a thin layer partition according to an embodiment of the present application;

[0074] Figure 8 Fig. 5 shows a structural block diagram of a radio frequency electrode simulation device according to an embodiment of the present application;

[0075] Figure 9 Fig. 6 shows an internal structural diagram of a computer device according to an embodiment of the present application. DETAILED DESCRIPTION

[0076] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are some but not all of the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0077] Figure 1 Fig. 1 shows an application environment diagram of a radio frequency electrode simulation method according to an embodiment of the present application. Referring to Fig. 1, Figure 1 the radio frequency electrode simulation method is applied to a radio frequency electrode simulation system. The radio frequency electrode simulation method includes a terminal 110 and / or a server 120. The terminal 110 and the server 120 are connected through a network. The terminal 110 can be specifically a desktop terminal or a mobile terminal, and the mobile terminal can be specifically at least one of a mobile phone, a tablet computer, a notebook computer and the like. The server 120 can be implemented by an independent server or a server cluster composed of multiple servers.

[0078] As shown in Fig. 2, Figure 2 in an embodiment, a radio frequency electrode simulation method is provided. The embodiment mainly takes the method applied to the terminal 110 and / or the server 120 in the above Figure 1 as an example for illustration. Referring to Fig. 2, Figure 2 the radio frequency electrode simulation includes:

[0079] Step 210, establishing a three-dimensional electrode model according to a type of a radio frequency electrode to be simulated;

[0080] Step 220, establishing a simulation model according to the three-dimensional electrode model;

[0081] Step 230, performing simulation according to the simulation model and a first formula to obtain a plurality of design parameter groups;

[0082] Step 240, obtaining a simulation result of the radio frequency electrode to be simulated according to the plurality of design parameter groups, the first formula and a screening condition;

[0083] The three-dimensional electrode model comprises boundary conditions and a preset number of periodic electrodes, and the preset number of periods is one period or half a period.

[0084] If the type of the radio frequency electrode to be simulated is an antisymmetric electrode, such as a silicon optical modulator GS electrode, the three-dimensional electrode model comprises:

[0085] four periodic boundary conditions, two PEC (Perfect Electric Conductor, PEC for short) boundary conditions, and half a period of electrodes, and the electrode simulation area of the simulation model corresponding to the antisymmetric electrode is half a period of electrodes.

[0086] If the type of the radio frequency electrode to be simulated is a symmetric electrode, such as a lithium niobate modulator GSG electrode, the three-dimensional electrode model comprises:

[0087] four periodic boundary conditions, two PMC (Perfect Magnetic Conductor, PMC for short) boundary conditions, and half a period of electrodes, and the electrode simulation area of the simulation model is half a period of electrodes, and the electrode simulation area of the simulation model corresponding to the symmetric electrode is half a period of electrodes.

[0088] If the type of the radio frequency electrode to be simulated is an asymmetric electrode, the three-dimensional electrode model comprises:

[0089] six periodic boundary conditions and one period of electrodes, and the electrode simulation area of the simulation model corresponding to the asymmetric electrode is one period of electrodes.

[0090] The method of the embodiment of the application establishes a simulation model according to an electrode model, different types of electrodes correspond to different electrode models and simulation models, different boundary conditions and a preset number of periodic electrodes are set, and the preset number of periods is one period or half a period. In the method of the application, the complete electrode that needs to be simulated is simplified to one period or half a period, thereby saving subsequent resource consumption, and since the area to be simulated is reduced to one period or half a period of electrodes, the simulation speed can be improved.

[0091] Figure 3 The figure shows a three-dimensional electrode model of an antisymmetric electrode of the embodiment of the application, 301 is a PEC boundary, and the boundary outside 301 is a periodic boundary. Figure 3 The embodiment shown is a silicon optical modulator GS electrode, which further comprises a one-period silicon optical T electrode 302.

[0092] Figure 4 Fig. 1 shows a schematic diagram of a three-dimensional electrode model of a symmetric electrode according to an embodiment of the present application, 401 is a PMC boundary, and the boundary beyond 401 is a periodic boundary. Figure 4 The embodiment shown is a lithium niobate modulator GSG electrode, which further comprises a periodic lithium niobate electrode 402.

[0093] Since the symmetric electrode and the anti-symmetric electrode both have symmetry, in the embodiment of the present application, a perfect electric conductor (PEC) or a perfect magnetic conductor (PMC) can be used as a boundary condition, and the simulation region can be reduced to half a period of the electrode, thereby saving subsequent resource consumption.

[0094] In step 220 of the embodiment of the present application, the three-dimensional electrode model is established according to the type of the radio frequency electrode to be simulated, and the three-dimensional electrode model comprises:

[0095] According to the three-dimensional electrode model and the material of the radio frequency electrode to be simulated, a partition of the simulation region of the electrode is obtained;

[0096] Material parameters of each partition are obtained;

[0097] Equivalent parameters of each partition are obtained according to the partition and the material parameters of the partition;

[0098] The boundary condition is obtained according to the boundary surface of the three-dimensional electrode model;

[0099] The three-dimensional electrode model is established according to the equivalent parameters of the partition and the boundary condition.

[0100] In the embodiment of the present application, the partition of the simulation region of the electrode comprises a PN junction and / or a thin layer partition,

[0101] The equivalent parameters of each partition are obtained, and the equivalent parameters of the PN junction and / or the equivalent parameters of the thin layer partition are obtained.

[0102] The equivalent parameters of the PN junction and / or the equivalent parameters of the thin layer partition are obtained.

[0103] Different types of electrodes can include different partitions, for example, a symmetric electrode can not include a PN junction and a thin layer partition; a symmetric electrode can include any one of a PN junction and a thin layer partition; and a symmetric electrode can include both a PN junction and a thin layer partition.

[0104] Similarly, the non-symmetric electrode and the anti-symmetric electrode also have the above four cases, which will not be described here.

[0105] The electrode to be simulated includes which partition, and the equivalent parameters of the corresponding partition are obtained during simulation.

[0106] In the embodiment of the present application, the P++ partition of the PN junction, the N++ partition of the PN junction, and the PN partition of the PN junction.

[0107] In the embodiment of the present application, the equivalent parameters of the PN junction are obtained in the following manner:

[0108] The conductivity σ of the equivalent region of the N++ partition of the PN junction NN is:

[0109]

[0110] The conductivity σ of the equivalent region of the P++ partition of the PN junction PP is:

[0111]

[0112] wherein R NNs is the sheet resistance of the N++ partition of the PN junction, t NN is the thickness of the N++ partition of the PN junction, R PPs is the sheet resistance of the P++ partition of the PN junction, t PP is the thickness of the P++ partition of the PN junction.

[0113] The dielectric constant ε of the equivalent region of the PN partition of the PN junction PN is:

[0114]

[0115] The N conductivity σ of the equivalent region of the PN partition of the PN junction N is:

[0116]

[0117] The P conductivity σ of the equivalent region of the PN partition of the PN junction P is:

[0118]

[0119] wherein w PN is the PN junction depletion region width, C PN is the PN junction capacitance, t s is the thickness of the converted equivalent radio frequency material, L s is the length extending in the direction perpendicular to the PN junction cross section set in the semiconductor simulation, w N is the width of the remaining region of the N region of the PN junction excluding the depletion region, R N is the resistance of the N region of the PN junction, w P is the width of the remaining region of the P region of the PN junction excluding the depletion region, RP The resistance is the P-region resistance of the PN junction. In this embodiment of the invention, the PN junction can be converted into an equivalent radio frequency material distribution. The equivalent radio frequency material parameters can be obtained from the two-dimensional cross-sectional semiconductor simulation and then substituted into the three-dimensional radio frequency electrode simulation. This avoids the need for three-dimensional semiconductor simulation and greatly accelerates the electrode design and simulation process.

[0120] In this embodiment of the invention, obtaining the equivalent parameters of the thin-layer partition includes:

[0121] The volume fraction of the thin-layer partition is converted into the area fraction;

[0122] The volume fraction of the thin-layer partition is converted into the area fraction in the following manner:

[0123]

[0124] Where k0 is the vacuum wave vector, w is a trial function of u, u is the Bloch mode field of the electric field, and ε re ε represents the equivalent dielectric constant distribution of the material. r Let σ be the dielectric constant distribution of the material, σ be the conductivity distribution of the material, and ω be the dielectric constant distribution. rf ω is the angular frequency of radio frequency, ε0 ​​is the vacuum permittivity, i is the imaginary unit, Ω represents the thin-layer partition, S represents the bottom surface of the thin-layer partition, and t S (x,z) represents the thickness distribution of the thin layer partition. dV is the dielectric constant of silicon oxide, dV represents the volume derivative of the thin film partition, and (x,z) are the x and z coordinates in the xyz coordinate system.

[0125] Figure 5 The figure shown is a two-dimensional cross-sectional schematic diagram of the antisymmetric electrode according to an embodiment of the present invention. Figure 5 The antisymmetric electrode shown includes a PN junction partition.

[0126] like Figure 5 As shown, the two-dimensional cross-sectional view of the electrode includes a PN junction 510, a metal via 521, a metal via 522, a metal 531, a metal 532, an upper cladding layer 541, a lower cladding layer 542, and a substrate 550.

[0127] Figure 6 The figure shown is a schematic diagram of a simulation model of a PN junction according to an embodiment of the present invention. Figure 6 The explanation will take an antisymmetric PN junction as an example. Figure 6 The diagram shows the partitions of the PN junction and the equivalent parameters of the partitions.

[0128] Figure 7 The figure shown is a two-dimensional cross-sectional schematic diagram of an electrode including a thin-layer partition according to an embodiment of the present invention. Figure 7For example, the lithium niobate modulator electrode, its two-dimensional cross-sectional view includes the upper cladding layer 710, lithium niobate thin layer 720, lower cladding layer 730 and substrate 740. Figure 7 The partition of the lithium niobate modulator electrode shown is the thin layer partition of the symmetric electrode.

[0129] In the embodiment of the application, the equivalent parameters of the PN junction and the equivalent parameters of the thin layer partition can reduce the three-dimensional fine grid to a two-dimensional fine grid, reduce the number of fine grids, thereby greatly reducing the simulation overhead and greatly accelerating the simulation calculation speed.

[0130] Figure 5 And Figure 7 A period of electrode is shown in the figure, but in simulation, only half a period of T-shaped electrode is needed for symmetric electrode and anti-symmetric electrode, for example Figure 5 In the figure, a period of electrode is divided into two half-period electrodes by the red vertical dotted line.

[0131] In the embodiment of the application, in step 230, the simulation is performed according to the simulation model and the first formula to obtain a plurality of design parameter groups, including:

[0132] Obtaining a plurality of electrode size groups;

[0133] According to the plurality of electrode size groups, the simulation model and the first formula, calculating the design parameter group corresponding to each electrode size group;

[0134] The design parameter group includes: the periodic electrode phase refractive index n r , the characteristic impedance of the periodic radio frequency electrode Z c And the electrode loss α.

[0135] In the embodiment of the application, the screening condition is:

[0136] The characteristic impedance of the periodic radio frequency electrode Z c Is within a predetermined range, and the periodic radio frequency electrode phase refractive index n r Is equal to the group refractive index n g Of the optical waveguide.

[0137] The simulation result of the radio frequency electrode that needs to be simulated is obtained according to the plurality of design parameter groups, the first formula and the screening condition, including:

[0138] Obtaining the design parameter group that meets the screening condition as the candidate design parameter group;

[0139] From the candidate design parameter group, the electrode loss α with the smallest is selected as the simulation result.

[0140] In the embodiment of the present application, the first formula includes a periodic electrode phase refractive index n r A calculation formula of a characteristic impedance Z of the periodic radio frequency electrode c A calculation formula of the electrode loss α,

[0141] The periodic electrode phase refractive index n r The calculation formula is:

[0142] n r = Re(n eff ) = Re(k z / k0)

[0143] The characteristic impedance Z of the periodic radio frequency electrode c The calculation formula is:

[0144]

[0145] P z = 2∫∫dxdy(E x H y -E y H x )

[0146] If the type of the radio frequency electrode to be simulated is a silicon optical modulator electrode, the voltage V is:

[0147] V = 2∫dxE x

[0148] If the type of the radio frequency electrode to be simulated is a lithium niobate modulator electrode, the voltage V is:

[0149] V = ∫dxE x

[0150] The electrode loss α calculation formula is:

[0151] α = Im(k z )

[0152] Wherein, k z is an eigenvalue, k0 is a vacuum wave vector, E x is an x-direction component of an electric field, E y is a y-direction component of the electric field, H x is an x-direction component of a magnetic field, and H y is a y-direction component of the magnetic field.

[0153] In the embodiment of the present application, the electrode size group can be set as six parameters, which are L1, L2, g1, g2, w1 and w2. According to actual experience, after setting the range interval of each parameter and the constraint condition, the constraint condition can be L2 < L1 < L z, the range interval can be g1, g2, w1, w2 are all greater than 0, and all less than 250 microns. For each parameter, parameter values are selected at intervals, for example, exhaustive enumeration is performed at intervals of 5 microns; after exhaustive enumeration, a plurality of design parameter groups are obtained in a manner of permutation and combination.

[0154] In addition, the electrode size group can adopt the above-mentioned exhaustive enumeration method, and can also adopt a Monte Carlo method, a particle swarm method, a genetic algorithm, machine learning and the like, which will not be described here.

[0155] The method of the embodiment of the application, the first formula is derived from the complex band structure under the Bloch boundary condition according to Maxwell's equation, and through the first formula, the inaccurate defect of the analytical expression method can be overcome. At the same time, the method of the embodiment of the application only needs to numerically simulate the electrode of half a period or one period, and therefore is much smaller than the calculation overhead of the S parameter method. Through the method of the patent, efficient and accurate design and simulation of the periodic radio frequency electrode can be realized.

[0156] The method of the embodiment of the application uses a perfect electric conductor (PEC) or a perfect magnetic conductor (PMC) as a boundary condition, can reduce the simulation region of the electrode with symmetry to half a period of the electrode, and can also reduce one period for the asymmetric electrode through the boundary condition, thereby avoiding simulating the entire electrode and saving subsequent resource consumption. In the embodiment of the application, the PN junction included in the electrode can be converted into an equivalent radio frequency material distribution, the equivalent radio frequency material parameters can be obtained according to the two-dimensional cross-sectional semiconductor simulation and brought into the three-dimensional radio frequency electrode simulation, thereby avoiding the need for three-dimensional semiconductor simulation, and the thin layer is divided into a volume integral and converted into an area integral, the three-dimensional fine grid can be reduced to a two-dimensional fine grid, the number of fine grids can be reduced, and therefore the simulation overhead can be greatly reduced and the simulation calculation speed can be greatly accelerated. As can be seen, the method of the embodiment of the application only needs to numerically simulate the electrode of one period or half a period, and therefore is much smaller than the calculation overhead of the S parameter method. Through the method of the patent, efficient and accurate design and simulation of the periodic radio frequency electrode can be realized.

[0157] As shown in Figure 8 The application further provides a radio frequency electrode simulation device, and the device comprises:

[0158] An electrode model unit 810 is configured to establish a three-dimensional electrode model according to the type of the radio frequency electrode to be simulated;

[0159] A simulation model unit 820 is configured to establish a simulation model according to the three-dimensional electrode model;

[0160] A parameter unit 830 is configured to perform simulation according to the simulation model and the first formula, and obtain a plurality of design parameter groups;

[0161] simulate the radio frequency electrode according to the multiple design parameter groups, the first formula and the screening condition;

[0162] The three-dimensional electrode model comprises boundary conditions and a preset number of periodic electrodes, and the preset number of periods is one period or half a period.

[0163] In the embodiment of the application, if the type of the radio frequency electrode to be simulated is an antisymmetric electrode, the three-dimensional electrode model comprises:

[0164] four periodic boundary conditions, two PEC boundary conditions and half a period of electrodes, and the electrode simulation region of the simulation model corresponding to the antisymmetric electrode is half a period of electrodes.

[0165] If the type of the radio frequency electrode to be simulated is a symmetric electrode, the three-dimensional electrode model comprises:

[0166] four periodic boundary conditions, two PMC boundary conditions and half a period of electrodes, the simulation region of the simulation model is half a period of electrodes, and the electrode simulation region of the simulation model corresponding to the symmetric electrode is half a period of electrodes.

[0167] If the type of the radio frequency electrode to be simulated is an asymmetric electrode, the three-dimensional electrode model comprises:

[0168] six periodic boundary conditions and one period of electrodes, and the electrode simulation region of the simulation model corresponding to the asymmetric electrode is one period of electrodes.

[0169] In the embodiment of the application, the simulation model unit 820 is further configured to:

[0170] obtain a partition of the simulation region of the electrode according to the three-dimensional electrode model and the material of the radio frequency electrode to be simulated;

[0171] obtain a material parameter of each partition;

[0172] obtain an equivalent parameter of each partition according to the partition and the material parameter of the partition;

[0173] obtain the boundary condition according to the boundary surface of the three-dimensional electrode model;

[0174] establish the three-dimensional electrode model according to the equivalent parameter of the partition and the boundary condition.

[0175] In this embodiment of the invention, the simulation region of the electrode includes a PN junction and / or a thin-layer partition. The simulation model unit 820 is further configured to obtain the equivalent parameters of the PN junction and / or the equivalent parameters of the thin-layer partition.

[0176] In this embodiment of the invention, the simulation model unit 820 is further configured to obtain the equivalent parameters of the PN junction in the following manner:

[0177] The conductivity σ of the equivalent region of the N++ partition of the PN junction NN for:

[0178]

[0179] The conductivity σ of the equivalent region of the P++ partition of the PN junction PP for:

[0180]

[0181] Among them, R NNs Let t be the sheet resistance of the N++ partition of the PN junction. NN R is the thickness of the N++ partition of the PN junction. PPs Let t be the sheet resistance of the P++ partition of the PN junction. PP The thickness of the P++ partition of the PN junction;

[0182] The dielectric constant ε of the equivalent region of the PN partition of the PN junction PN for:

[0183]

[0184] The N-conductivity σ of the equivalent region of the PN partition of the PN junction N for:

[0185]

[0186] The P-conductivity σ of the equivalent region of the PN partition of the PN junction P for:

[0187]

[0188] Among them, w PN C is the width of the depletion region of the PN junction. PN For PN junction capacitance, t s L represents the thickness of the equivalent radio frequency material after conversion. s w is the length extending in a direction perpendicular to the cross-section of the PN junction, defined in semiconductor simulation. N R is the width of the N-region of the PN junction after removing the depletion region. Nw is the resistance of the N region of the PN junction. P R is the width of the remaining region of the P region of the PN junction excluding the depletion region. P R is the resistance of the P region of the PN junction.

[0189] In the embodiment of the present application, the simulation model unit 820 is further configured to:

[0190] convert the volume integral of the thin layer partition into an area integral;

[0191] The conversion of the volume integral of the thin layer partition into an area integral is performed in the following manner:

[0192]

[0193] where k0 is the vacuum wave vector, w is the trial function of u, u is the Bloch mode field of the electric field, ε re ε is the equivalent permittivity distribution of the material, r σ is the conductivity distribution of the material, and ω is the angular frequency of the radio frequency. rf ε0 is the vacuum permittivity, i is the imaginary unit, Ω represents the thin layer partition, S represents the bottom surface of the thin layer partition, and t S (x, z) is the thickness distribution of the thin layer partition, ε is the permittivity of silicon, dV represents the volume differential of the thin layer partition, and (x, z) are the x and z coordinates in the xyz coordinate system.

[0194] In the embodiment of the present application, the parameter unit 830 is further configured to:

[0195] obtain a plurality of electrode size groups;

[0196] According to the plurality of electrode size groups, the simulation model and the first formula, calculate a design parameter group corresponding to each electrode size group;

[0197] The design parameter group includes: a periodic electrode phase refractive index n r , a periodic radio frequency electrode characteristic impedance Z C , and an electrode loss α.

[0198] In the embodiment of the present application, the screening condition is:

[0199] The periodic radio frequency electrode characteristic impedance Z c is within a preset range, and the periodic radio frequency electrode phase refractive index n r is equal to the group refractive index n g of the optical waveguide.

[0200] The simulation result of the radio frequency electrode that needs to be simulated is obtained according to the plurality of design parameter groups, the first formula and the screening condition, which includes:

[0201] obtaining the design parameter group satisfying the screening condition as a candidate design parameter group;

[0202] from the candidate design parameter group, selecting the one with the minimum electrode loss alpha as the simulation result.

[0203] In the embodiment of the application, the first formula includes periodic electrode phase refractive index n r The calculation formula of the characteristic impedance Z of the periodic radio frequency electrode is c The calculation formula of the characteristic impedance Z of the periodic radio frequency electrode is

[0204] The periodic electrode phase refractive index n r The calculation formula is:

[0205] n r = Re(n eff ) = Re(k z / k0)

[0206] The calculation formula of the characteristic impedance Z of the periodic radio frequency electrode is c The calculation formula is:

[0207]

[0208] P z = 2∫∫dxdy(E x H y -E y H x )

[0209] If the type of the radio frequency electrode to be simulated is a silicon optical modulator electrode, the voltage V is:

[0210] V = 2∫dxE x

[0211] If the type of the radio frequency electrode to be simulated is a lithium niobate modulator electrode, the voltage V is:

[0212] V = ∫dxE x

[0213] The calculation formula of the electrode loss alpha is:

[0214] alpha = Im(k z )

[0215] wherein k z is an eigenvalue, k0 is a vacuum wave vector, E x is an x-direction component of an electric field, E y is a u-direction component of an electric field, H x is an x-direction component of a magnetic field, and H yy is the y-direction component of the magnetic field.

[0216] In the embodiments of the present invention, resource consumption can be reduced and simulation speed can be accelerated.

[0217] This invention also provides a computer device, including a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, it implements the following method: the method is applied to a periodic electrode, and the method includes: establishing a three-dimensional electrode model according to the type of radio frequency electrode to be simulated; establishing a simulation model based on the three-dimensional electrode model; performing simulation based on the simulation model and a first formula to obtain multiple sets of design parameters; and obtaining simulation results of the radio frequency electrode to be simulated based on the multiple sets of design parameters, the first formula, and screening conditions; wherein the three-dimensional electrode model includes boundary conditions and a preset number of periodic electrodes, the preset number of periods being one period or half a period.

[0218] This invention also provides a computer-readable storage medium storing a computer program thereon. When executed by a processor, the computer program implements the following method: the method is applied to a periodic electrode, and the method includes: establishing a three-dimensional electrode model according to the type of radio frequency electrode to be simulated; establishing a simulation model based on the three-dimensional electrode model; performing simulation based on the simulation model and a first formula to obtain multiple sets of design parameters; and obtaining the simulation results of the radio frequency electrode to be simulated based on the multiple sets of design parameters, the first formula, and screening conditions; wherein the three-dimensional electrode model includes: boundary conditions and a preset number of periodic electrodes, the preset number of periods being one period or half a period.

[0219] The above-described radio frequency electrode simulation method achieves the beneficial effect of solving the technical problems mentioned in the background art.

[0220] Figure 2 This is a flowchart illustrating a radio frequency electrode simulation method in one embodiment. It should be understood that, although... Figure 2 The steps in the flowchart are shown sequentially as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order in which these steps are executed, and they can be performed in other orders. Figure 2 At least some of the steps in the process may include multiple sub-steps or multiple stages. These sub-steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these sub-steps or stages is not necessarily sequential, but can be executed in turn or alternately with other steps or at least some of the sub-steps or stages of other steps.

[0221] Figure 9 An internal structure diagram of a computer device in an embodiment is shown. The computer device can be specifically a server 120 in Figure 1 Figure 9 As shown in the figure, the computer device includes a processor, a memory, a network interface, an input device and a display screen connected through a system bus. The memory includes a non-volatile storage medium and an internal memory. The non-volatile storage medium of the computer device stores an operating system, and can also store a computer program which, when executed by the processor, can enable the processor to implement the radio frequency electrode simulation method. The internal memory can also store a computer program which, when executed by the processor, can enable the processor to execute the radio frequency electrode simulation method. The display screen of the computer device can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer device can be a touch layer overlaid on the display screen, or can be a key, trackball or touchpad arranged on the shell of the computer device, or can be an external keyboard, touchpad or mouse, etc.

[0222] Those skilled in the art can understand that the structure shown in Figure 9 the figure is only a block diagram of part of the structure related to the present application scheme, and does not constitute a limitation on the computer device to which the present application scheme is applied. The specific computer device can include more or fewer components than those shown in the figure, or combine certain components, or have a different arrangement of components.

[0223] ​Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program. The program can be stored in a non-volatile computer readable storage medium, and when the program is executed, the processes of the above-mentioned embodiments of the methods can be included. Any reference to memory, storage, databases, or other media in this application includes non-volatile and / or volatile memory. Non-volatile memory can include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or flash memory. Volatile memory can include random access memory (RAM) or external cache memory. As an illustration but not limitation, RAM is available in many forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDR SDRAM), enhanced SDRAM (ESDRAM), synchronous link (Synchlink) DRAM (SLDRAM), memory bus (Rambus) direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM), etc.

[0224] It should be noted that the relational terms herein such as "first" and "second" and the like are used solely to distinguish one from another entity or action, without necessarily requiring or implying any such actual relationship or order between such entities or actions. Moreover, the terms "comprises", "comprising", or any other variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but can include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element preceded by "comprises a" does not, without more constraints, foreclose the existence of additional identical elements in the process, method, article, or apparatus that comprises the element.

[0225] The above description is merely one specific implementation of the application. Many modifications and variations of the described embodiments can be made to the described embodiments. Thus, it is intended that the application cover the modifications and variations of this application provided they come within the scope of the appended claims and their equivalents.

Claims

1. A radio frequency electrode simulation method, characterized by, The method is applied to a periodic electrode, and the method comprises: establishing a three-dimensional electrode model according to a type of a radio frequency electrode to be simulated; establishing a simulation model according to the three-dimensional electrode model; performing simulation according to the simulation model and a first formula to obtain a plurality of design parameter groups; obtaining a simulation result of the radio frequency electrode to be simulated according to the plurality of design parameter groups, the first formula and a screening condition; wherein the three-dimensional electrode model comprises: a boundary condition and a preset number of periodic electrodes, and the preset number of periods is one period or half a period; The first formula includes a periodic electrode phase refractive index n r A calculation formula, a periodic radio frequency electrode characteristic impedance Z c A calculation formula, and an electrode loss α calculation formula, The periodic electrode phase refractive index n r The calculation formula is: n r = Re(n eff ) = Re(k z / k0) The periodic RF electrode characteristic impedance Z c The calculation formula is: P z = 2∫∫dxdy(E x H y -E y H x ) if the type of the radio frequency electrode to be simulated is a silicon optical modulator electrode, a voltage V is: V = 2∫dxE x if the type of the radio frequency electrode to be simulated is a lithium niobate modulator electrode, the voltage V is: V = ∫dxE x the electrode loss α calculation formula is: a = Im(k z ) where k z is the eigenvalue, k0 is the vacuum wave vector, E x is the x-component of the electric field, E y is the y-component of the electric field, H x is the x-component of the magnetic field, and H y is the y-component of the magnetic field.

2. The method of claim 1, wherein, if the type of the radio frequency electrode to be simulated is an antisymmetric electrode, the three-dimensional electrode model comprises: four periodic boundary conditions, two PEC boundary conditions and half a period of electrodes, and an electrode simulation region of the simulation model corresponding to the antisymmetric electrode is half a period of electrodes; if the type of the radio frequency electrode to be simulated is a symmetric electrode, the three-dimensional electrode model comprises: four periodic boundary conditions, two PMC boundary conditions and half a period of electrodes, a simulation region of the simulation model is half a period of electrodes, and an electrode simulation region of the simulation model corresponding to the symmetric electrode is half a period of electrodes; if the type of the radio frequency electrode to be simulated is an asymmetric electrode, the three-dimensional electrode model comprises: six periodic boundary conditions and one period of electrodes, and an electrode simulation region of the simulation model corresponding to the asymmetric electrode is one period of electrodes.

3. The method of claim 2, wherein, The three-dimensional electrode model is established according to the type of the radio frequency electrode to be simulated, and the method comprises: obtaining a partition of a simulation region of the electrode according to the three-dimensional electrode model and a material of the radio frequency electrode to be simulated; obtaining a material parameter of each partition; obtaining an equivalent parameter of each partition according to the partition and the material parameter of the partition; obtaining the boundary condition according to a boundary surface of the three-dimensional electrode model; establishing the three-dimensional electrode model according to the equivalent parameter of the partition and the boundary condition.

4. The method of claim 3, wherein, The partition of the simulation region of the electrode comprises a PN junction and / or a thin layer partition, The equivalent parameter of each partition is obtained, and the method comprises: obtaining an equivalent parameter of the PN junction and / or obtaining an equivalent parameter of the thin layer partition; The equivalent parameter of the PN junction is obtained in the following manner: The conductivity σ of the equivalent area of the N++ partition of the PN junction is: NN is: The conductivity σ of the equivalent region of the P++ partition of the PN junction is: PP is: wherein R NNs is the sheet resistance of the N++ portion of the PN junction, t NN is the thickness of the N++ portion of the PN junction, R PPs is the sheet resistance of the P++ portion of the PN junction, t PP is the thickness of the P++ portion of the PN junction; The dielectric constant ε of the equivalent region of the PN partition of the PN junction PN is: N conductivity σ of the equivalent region of the PN partition of the PN junction N is: P conductivity σ of the equivalent region of the PN partition of the PN junction P is: where w PN is the PN junction depletion region width, C PN is the PN junction capacitance, t s is the thickness of the converted equivalent RF material, L s is the length set in the semiconductor simulation that extends in the direction perpendicular to the PN junction cross section, w N is the width of the remaining region of the N region of the PN junction excluding the depletion region, R N is the resistance of the N region of the PN junction, w P is the width of the remaining region of the P region of the PN junction excluding the depletion region, R P is the resistance of the P region of the PN junction.

5. The method of claim 4, wherein, The equivalent parameter of the thin layer partition is obtained in the following manner: the volume integral of the thin layer partition is converted into an area integral; The volume integral of the thin layer partition is converted into an area integral in the following manner: where k0 is the vacuum wave vector, w is the trial function of u, u is the Bloch mode field of the electric field, ε re is the equivalent permittivity distribution of the material, ε r is the permittivity distribution of the material, σ is the conductivity distribution of the material, ω rf is the angular frequency of the radio frequency, ε0 is the vacuum permittivity, i is the imaginary unit, Ω represents the thin layer partition, S represents the bottom surface of the thin layer partition, t S (x,z) is the thickness distribution of the thin layer partition, is the permittivity of silicon, dV represents the volume differential of the thin layer partition, (x,z) is the x coordinate and z coordinate in the xyz coordinate system.

6. The method of claim 1, wherein, The simulation is performed according to the simulation model and a first formula to obtain a plurality of design parameter groups, and the method comprises: obtaining a plurality of electrode size groups; calculating a design parameter group corresponding to each electrode size group according to the plurality of electrode size groups, the simulation model and the first formula; The design parameter group includes: periodic electrode phase refractive index n r , periodic radio frequency electrode characteristic impedance Z c , and electrode loss α.

7. The method of claim 6, wherein, The screening condition is: Periodic RF electrode characteristic impedance Z c Within a predetermined range, and the periodic RF electrode phase refractive index n r is equal to the group refractive index n g of the optical waveguide; The simulation result of the radio frequency electrode to be simulated is obtained according to the multiple design parameter groups, the first formula and a screening condition, and the simulation result comprises: The design parameter group satisfying the screening condition is obtained as a design parameter group to be selected; The electrode loss α of the design parameter group to be selected is the smallest, and the design parameter group to be selected is selected as the simulation result.

8. A radio frequency electrode simulation device, characterized by, The device comprises: An electrode model unit is configured to establish a three-dimensional electrode model according to a type of a radio frequency electrode to be simulated; A simulation model unit is configured to establish a simulation model according to the three-dimensional electrode model; A parameter unit is configured to perform simulation according to the simulation model and a first formula, and obtain multiple design parameter groups; A simulation unit is configured to obtain a simulation result of the radio frequency electrode to be simulated according to the multiple design parameter groups, the first formula and a screening condition; The three-dimensional electrode model comprises a boundary condition and a preset number of periodic electrodes, and the preset number of periods is one period or one-half period. The first formula includes a periodic electrode phase refractive index n r A calculation formula, a periodic radio frequency electrode characteristic impedance Z c A calculation formula, and an electrode loss α calculation formula, The periodic electrode phase refractive index n r The calculation formula is: n r = Re(n eFf ) = Re(k z / k0) The periodic RF electrode characteristic impedance Z c The calculation formula is: P z = 2∫∫dxdy(E x H y -E y H x ) If the type of the radio frequency electrode to be simulated is a silicon optical modulator electrode, the voltage V is: V = 2∫dxE x If the type of the radio frequency electrode to be simulated is a lithium niobate modulator electrode, the voltage V is: V = ∫dxE x The electrode loss α calculation formula is: a = Im(k z ) where k z is the eigenvalue, k0 is the vacuum wave vector, E x is the x-component of the electric field, E y is the y-component of the electric field, H x is the x-component of the magnetic field, and H y is the y-component of the magnetic field.

9. A computer device comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, characterized in that, The processor executes the computer program to realize the method in any one of claims 1 to 7.

10. A computer-readable storage medium having stored thereon a computer program, characterized in that, The computer program is executed by the processor to realize the method in any one of claims 1 to 7.

Images