Miniaturized drive circuit structure free of external negative voltage power supply

CN119628380APending Publication Date: 2025-03-14DONGGUAN BEIDOUXING ELECTRONIC TECH CO LTD
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Patent Information

Application Number
CN202411709713.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-27
Publication Date
2025-03-14

AI Technical Summary

Technical Problem

Third-generation semiconductor devices are susceptible to interference in high-power power applications, resulting in false triggering. The prior art requires the power supply of the driver chip to enhance anti-interference ability, but this increases system complexity and cost.

Method used

A miniaturized driving circuit structure that eliminates external negative voltage power supply is designed. By introducing a first capacitor and a voltage-regulating diode into the driving circuit, and connecting it in parallel, the capacitance of the first capacitor is greater than the load capacity, ensuring that the negative voltage state is maintained at the falling edge, and avoiding the negative voltage requirement for power supply to the driving chip.

Benefits of technology

This design reduces the number of components and costs, occupies less space in the board, has no relationship with the waveform duty cycle, and is flexible and stable. It is suitable for various power devices with small driving electrode leakage current, improving anti-interference ability.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention provides a miniaturized driving circuit structure free of external negative voltage power supply, which comprises a driving power supply assembly, a driving circuit and a first resistor, and is characterized in that the driving power supply assembly is electrically connected with a first end of the driving circuit, a second end of the driving circuit is electrically connected with one end of the first resistor, and the other end of the first resistor is grounded; the driving circuit comprises a first capacitor and a voltage stabilizing diode, and the first capacitor is connected with the voltage stabilizing diode in parallel; by adopting the driving circuit structure, compared with a normal driving circuit, the number of added elements is small, the cost is low, and the occupied space in a board is extremely small; parameters of the voltage-regulator tube can be adjusted according to the magnitude of negative pressure, and the magnitude of the negative pressure is irrelevant to the duty ratio of the waveform and is relatively flexible and stable; and the method is generally suitable for various power devices with relatively low driving electrode leakage current, such as Si / SiC MOS (Metal Oxide Semiconductor) tubes and IGBTs (Insulated Gate Bipolar Translator), and can be widely applied to various industries.
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