A silicon-based resistor and its manufacturing method

Abstract

The present application provides a silicon-based resistor and a manufacturing method thereof. The method includes obtaining a resistor substrate and material data of the resistor substrate, calculating the resistance value of the resistor to be manufactured according to the material data, where the material data includes the resistivity, length, and area of the resistor substrate; sequentially performing cleaning and oxidation treatment on the resistor substrate to obtain an oxidized substrate; sequentially performing photolithography, boron implantation, and cleaning treatment on the oxidized substrate to obtain a substrate silicon wafer; sequentially performing metal evaporation, metal photolithography, metal etching, metal degumming, and alloying treatment on the front surface of the substrate silicon wafer to obtain a silicon wafer to be laminated; sequentially performing lamination, etching, and metal evaporation treatment on the silicon wafer to be laminated to obtain a silicon-based resistor with the same resistance value. By manufacturing the silicon-based resistor through this manufacturing method of the silicon-based resistor, the cost is low and the manufactured silicon-based resistor is in chip package, making the occupied area of the silicon-based resistor small, solving the problems of large resistor area, high manufacturing cost, and complex processing technology existing in current resistors.

Description

Technical Field

[0001] This application belongs to the field of semiconductor technology, and particularly relates to a silicon-based resistor and a manufacturing method thereof. Background Art

[0002] Resistance is used to represent the magnitude of the hindrance of a conductor to the flow of electric current. The greater the resistance of a conductor, the greater the hindrance of the conductor to the flow of electric current. For different conductors, the resistance is generally different. Resistance is a property of the conductor itself. A resistor is an energy-consuming component that presents a hindrance to the flow of electric current. Summary of the Invention

[0003] An embodiment of this application provides a silicon-based resistor and a manufacturing method thereof to solve the problems of large resistor area, high manufacturing cost, and complex processing technology existing in current resistors.

[0004] In a first aspect, an embodiment of this application provides a manufacturing method of a silicon-based resistor, including the following steps:

[0005] Obtain a resistor substrate and material data of the resistor substrate, and calculate the resistance value of the resistor to be manufactured according to the material data. The material data includes the resistivity, length, and area of the resistor substrate;

[0006] Clean and oxidize the resistor substrate in sequence to obtain an oxidized substrate;

[0007] Perform photolithography, boron implantation, and cleaning on the oxidized substrate in sequence to obtain a substrate silicon wafer;

[0008] Perform metal evaporation, metal photolithography, metal etching, metal degluing, and alloying on the front side of the substrate silicon wafer in sequence to obtain a silicon wafer to be laminated;

[0009] Perform lamination, etching, and metal evaporation on the silicon wafer to be laminated in sequence to obtain a silicon-based resistor with the same resistance value as the calculated resistance value.

[0010] Optionally, cleaning and oxidizing the resistor substrate in sequence to obtain an oxidized substrate includes:

[0011] Clean the resistor substrate with a cleaning solution at a first temperature for a first time to obtain a first substrate;

[0012] Clean the first substrate with clean water for a second time and then spin-dry it to obtain a second substrate;

[0013] Oxidize the second substrate using an oxidation process to obtain an oxidized substrate.

[0014] Optionally, the oxidation process includes:

[0015] Place the second substrate into a sealed quartz boat, input nitrogen onto the quartz boat at the second temperature at a first rate and continue for a third time to obtain a first oxidation stage;

[0016] During the first oxidation stage, heat up the quartz boat until the third temperature, stop inputting the nitrogen to the quartz boat and switch to inputting oxygen to the quartz boat for a fourth time to obtain a second oxidation stage;

[0017] During the second oxidation stage, input oxygen to the quartz boat at a first rate, input hydrogen to the quartz boat at a second rate simultaneously, and perform hydrogen-oxygen synthesis for a fifth time to obtain a third oxidation stage;

[0018] During the third oxidation stage, input oxygen to the quartz boat at the first rate and for a sixth time to obtain a fourth oxidation stage;

[0019] During the fourth oxidation stage, input trichloroethane to the quartz boat at a third rate and for a seventh time to obtain a fifth oxidation stage;

[0020] During the fifth oxidation stage, input dry oxygen to the quartz boat for an eighth time and reduce the temperature of the quartz boat from the third temperature to the second temperature to obtain the oxidized substrate.

[0021] Optionally, perform photolithography, boron implantation, and cleaning processes on the oxidized substrate in sequence to obtain a substrate silicon wafer including:

[0022] Perform glue coating, pre-baking, alignment, development, fixing, hardening, oxide layer etching, and glue removal processes on the oxide layer of the oxidized substrate in sequence to obtain a photolithography substrate;

[0023] Implant boron into the photolithography substrate at a first dose and a first energy to obtain a third substrate;

[0024] Perform a first cleaning on the third substrate with a cleaning solution at a first temperature and for a first time, and then perform a second cleaning with clear water for a second time to obtain a substrate silicon wafer.

[0025] Optionally, perform metal evaporation, metal photolithography, metal etching, metal glue removal, and alloying processes on the front side of the substrate silicon wafer in sequence to obtain a silicon wafer to be laminated including:

[0026] Evaporate metals titanium and aluminum on the front side of the substrate silicon wafer to obtain a first silicon wafer;

[0027] Perform glue coating, pre-baking, alignment, development, fixing, and hardening processes on the first silicon wafer in sequence to obtain a second silicon wafer;

[0028] The front surface of the second silicon wafer is successively subjected to aluminum metal etching, titanium metal etching, and wafer surface treatment using an EDTA etching solution to obtain a third silicon wafer;

[0029] The front surface metal of the third silicon wafer is processed using a degumming process to obtain a fourth silicon wafer;

[0030] The metal layer of the fourth silicon wafer is synthesized using a fourth temperature and alloying time to obtain a silicon wafer to be laminated.

[0031] Optionally, the manufacturing method of the silicon-based resistor includes: obtaining the EDTA etching solution, and the content of obtaining the EDTA etching solution includes:

[0032] Put 131 g of ethylenediaminetetraacetic acid into a beaker, inject 1000 ml of deionized water into the beaker and stir to obtain an EDTA emulsion;

[0033] Inject 280 ml of ammonia water into the EDTA emulsion in the beaker and stir to obtain an EDTA mixture;

[0034] Inject 3000 ml of hydrogen peroxide and 6000 ml of deionized water into the EDTA mixture in the beaker in sequence and stir and mix to obtain the EDTA etching solution.

[0035] Optionally, the degumming process includes:

[0036] Obtain a first degumming tank and a second degumming tank that meet the temperature requirements and have a stripping solution, a third degumming tank with methanol liquid, and a fourth degumming tank and a fifth degumming tank with isopropanol liquid;

[0037] Put the third silicon wafer into the first degumming tank for degumming treatment according to a second time to obtain a first degummed silicon wafer;

[0038] Put the first degummed silicon wafer into the second degumming tank for rinsing according to a ninth time to obtain a second degummed silicon wafer;

[0039] Put the second degummed silicon wafer into the fourth degumming tank for rinsing according to a tenth time to obtain a third degummed silicon wafer;

[0040] Put the third degummed silicon wafer into the fifth degumming tank for rinsing according to the tenth time to obtain a fourth degummed silicon wafer;

[0041] Put the fourth degummed silicon wafer into the third degumming tank for rinsing according to the tenth time to obtain a fifth degummed silicon wafer;

[0042] Put the fifth degummed silicon wafer into a three-stage flushing tank for flushing to obtain a sixth degummed silicon wafer;

[0043] The sixth degummed silicon wafer is spin-dried to obtain a fourth silicon wafer.

[0044] Optionally, the silicon wafer to be film-attached is successively subjected to film attachment, corrosion, and metal evaporation processes to obtain a silicon-based resistor having the same resistance value, including:

[0045] After film attachment is performed on the front surface of the silicon wafer to be film-attached, a film-attached silicon wafer is obtained;

[0046] The back metal of the film-attached silicon wafer is corroded using a corrosion process to obtain a silicon wafer to be evaporated;

[0047] Metal titanium, metal nickel, and metal silver evaporation processes are successively performed on the back metal of the silicon wafer to be evaporated to obtain a silicon-based resistor having the same resistance value.

[0048] Optionally, the corrosion process includes:

[0049] The back metal of the film-attached silicon wafer is corroded using a stress-relieving corrosion solution at a twelfth time and a first corrosion temperature to obtain a first corroded silicon wafer;

[0050] The first corroded silicon wafer is corroded using a decontamination corrosion solution at a thirteenth time and a second corrosion temperature to obtain a second corroded silicon wafer;

[0051] The second corroded silicon wafer is corroded using a buffered oxide etchant at a fourteenth time and a third corrosion temperature to obtain the silicon wafer to be evaporated.

[0052] In a second aspect, an embodiment of the present application provides a silicon-based resistor manufactured by the manufacturing method of the silicon-based resistor described above, including a silicon substrate layer, a first metal layer located above the silicon substrate layer, and a second metal layer located below the silicon substrate layer.

[0053] An embodiment of the present application provides a silicon-based resistor and its manufacturing method. The manufacturing method of the silicon-based resistor includes obtaining a resistor substrate and material data of the resistor substrate, calculating the resistance value of the resistor to be manufactured according to the material data, where the material data includes the resistivity, length, and area of the resistor substrate; successively performing cleaning and oxidation processes on the resistor substrate to obtain an oxidized substrate; successively performing photolithography, boron implantation, and cleaning processes on the oxidized substrate to obtain a substrate silicon wafer; successively performing metal evaporation, metal photolithography, metal corrosion, metal degumming, and alloying processes on the front surface of the substrate silicon wafer to obtain a silicon wafer to be film-attached; successively performing film attachment, corrosion, and metal evaporation processes on the silicon wafer to be film-attached to obtain a silicon-based resistor having the same resistance value. By manufacturing the silicon-based resistor using the manufacturing method of the silicon-based resistor, the cost is low and the manufactured silicon-based resistor is in a chip package, so that the occupied area of the silicon-based resistor is small, solving the problems of large resistance area, high manufacturing cost, and complex processing technology existing in current resistors. Brief Description of the Drawings

[0054] To more clearly illustrate the technical solutions in an embodiment of the present application, the following will briefly introduce the drawings required for the description of the embodiment. Obviously, the drawings in the following description are only some embodiments of the present application, and those skilled in the art can obtain other drawings based on these drawings without creative efforts.

[0055] To more fully understand the present application and its beneficial effects, the following will be described in conjunction with the drawings. Among them, the same reference numerals in the following description represent the same parts.

[0056] Figure 1 It is a flowchart of the steps of the manufacturing method of the silicon-based resistor provided in an embodiment of the present application.

[0057] Figure 2 It is a schematic structural diagram of the silicon-based resistor provided in an embodiment of the present application. Detailed Description of the Embodiments

[0058] The following will clearly and completely describe the technical solutions in an embodiment of the present application in conjunction with the drawings in an embodiment of the present application. Obviously, the described embodiments are only some embodiments of the present application, not all of them. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts fall within the scope of protection of the present application.

[0059] An embodiment of the present application provides a silicon-based resistor and its manufacturing method to solve the problems of large resistor area, high manufacturing cost, and complex processing technology existing in current resistors.

[0060] Embodiment 1:

[0061] The manufacturing method of the silicon-based resistor provided in an embodiment of the present application. Exemplarily, please refer to Figure 1 , Figure 1 It is a flowchart of the steps of the manufacturing method of the silicon-based resistor provided in an embodiment of the present application.

[0062] As Figure 1 shown, the present invention provides a manufacturing method of a silicon-based resistor, including the following steps:

[0063] S100. Obtain the resistor substrate and the material data of the resistor substrate, and calculate the resistance value of the resistor to be manufactured according to the material data. The material data includes the resistivity, length, and area of the resistor substrate;

[0064] S200. Clean and oxidize the resistor substrate in sequence to obtain an oxidized substrate;

[0065] S300. Perform photolithography, boron implantation, and cleaning processes on the oxidized substrate in sequence to obtain a substrate wafer.

[0066] S400. Perform metal evaporation, metal photolithography, metal etching, metal stripping, and alloying processes on the front side of the substrate wafer in sequence to obtain a wafer to be laminated.

[0067] S500. Perform lamination, etching, and metal evaporation processes on the wafer to be laminated in sequence to obtain a silicon-based resistor with the same resistance value.

[0068] Further, the materials required for manufacturing the silicon-based resistor are obtained in step S100. In steps S200 to S500, according to the resistor substrate in step S100, first perform an oxidation process in step S200 to obtain an oxidized substrate, then use the oxidized substrate in step S300 to form a p-type semiconductor to obtain a substrate wafer. After that, perform metal processing on the front side of the substrate wafer in step S400 to obtain a wafer to be laminated; finally, process the back side of the wafer to be laminated to obtain a silicon-based resistor with the same resistance value. In this embodiment, the oxidation process on the resistor substrate in step S200 is to prevent the surface of the manufactured silicon-based resistor from being contaminated and also facilitate the insulation function during the manufacturing process of the silicon-based resistor.

[0069] Further, the manufacturing method of this silicon-based resistor has low processing cost and small occupied area for manufacturing a silicon-based resistor with the same resistance.

[0070] In the embodiment of the invention claimed, the resistor substrate can be selected as a P-type double-sided polished silicon wafer, the resistivity of the resistor substrate can be selected as 2Ω.cm ± 10%, and the thickness of the resistor substrate can be selected as 150um ± 10um or 180um ± 10um or 200um ± 10um.

[0071] In the embodiment of the invention claimed, the resistance value of the resistor to be manufactured is calculated according to the material data using the resistance calculation formula. Specifically, the resistance calculation formula is R = ρ × L / S, where L is the length of the resistor substrate, unit: um; ρ is the resistivity of the resistor substrate, and S is the area of the resistor substrate, S = H × W area, unit: um^ 2 , and the resistance value R of the resistor to be manufactured can be calculated using the material data shown in Table 1. Table 1 is the material data of the resistor substrate.

[0072] Table 1

[0073]

[0074] A manufacturing method of a silicon-based resistor provided by an embodiment of the present application includes obtaining a resistor substrate and material data of the resistor substrate, calculating the resistance value of the resistor to be manufactured according to the material data, where the material data includes the resistivity, length, and area of the resistor substrate; sequentially performing a cleaning and oxidation treatment on the resistor substrate to obtain an oxidized substrate; sequentially performing photolithography, boron implantation, and cleaning treatment on the oxidized substrate to obtain a substrate silicon wafer; sequentially performing metal evaporation, metal photolithography, metal etching, metal degluing, and alloying treatment on the front surface of the substrate silicon wafer to obtain a silicon wafer to be laminated; sequentially performing lamination, etching, and metal evaporation treatment on the silicon wafer to be laminated to obtain a silicon-based resistor with the same resistance value. By manufacturing the silicon-based resistor through this manufacturing method of the silicon-based resistor, the cost is low and the manufactured silicon-based resistor is packaged using surface mount technology, making the occupied area of the silicon-based resistor small, solving the problems of large resistor area, high manufacturing cost, and complex processing technology existing in current resistors.

[0075] In an embodiment of the invention of the application, sequentially performing a cleaning and oxidation treatment on the resistor substrate to obtain an oxidized substrate includes:

[0076] Cleaning the resistor substrate with a cleaning solution at a first temperature and for a first time to obtain a first substrate;

[0077] Cleaning the first substrate with clean water for a second time and then spin-drying to obtain a second substrate;

[0078] Performing an oxidation treatment on the second substrate using an oxidation process to obtain an oxidized substrate.

[0079] Further, during the process of manufacturing the silicon-based resistor, NH 3 H 2 O:H 2 O 2 :H 2 O = 1:1:5 cleaning solution and HCL:H 2 O 2 :H 2 O = 1:1:5 cleaning solution are used to clean the resistor substrate obtained in step S100 at the first temperature for the first time respectively to obtain a first substrate. The cleaned first substrate is rinsed with clean water for a second time and spin-dried to obtain a second substrate. Then, an oxidation process is used to oxidize the second substrate to obtain an oxidized substrate. Specifically, the first temperature can be 75 ± 5 °C, the first time can be 10 min; the second time can be 10 ± 1 min.

[0080] In an embodiment of the invention of the application, the oxidation process includes:

[0081] Putting the cleaning solution and the second substrate into a sealed quartz boat, inputting nitrogen at a first speed on the cleaning solution quartz boat at a second temperature and continuing for a third time to obtain a first oxidation stage;

[0082] In the first oxidation stage of the cleaning liquid, the temperature of the quartz boat for the cleaning liquid is raised until the third temperature, the input of cleaning liquid nitrogen to the quartz boat for the cleaning liquid is stopped, and oxygen is input to the quartz boat for the cleaning liquid for the fourth time to obtain the second oxidation stage;

[0083] In the second oxidation stage of the cleaning liquid, oxygen is input to the quartz boat for the cleaning liquid at the first rate, hydrogen is input to the quartz boat for the cleaning liquid at the second rate, and hydrogen-oxygen synthesis is carried out for the fifth time to obtain the third oxidation stage;

[0084] In the third oxidation stage of the cleaning liquid, oxygen is input to the quartz boat for the cleaning liquid at the first rate of the cleaning liquid and for the sixth time to obtain the fourth oxidation stage;

[0085] In the fourth oxidation stage of the cleaning liquid, trichloroethane is input to the quartz boat for the cleaning liquid at the third rate and for the seventh time to obtain the fifth oxidation stage;

[0086] In the fifth oxidation stage of the cleaning liquid, dry oxygen is input to the quartz boat for the cleaning liquid for the eighth time, and the temperature of the quartz boat for the cleaning liquid is lowered from the third temperature of the cleaning liquid to the second temperature of the cleaning liquid to obtain the oxidized substrate.

[0087] Further, the second temperature can be 750 ± 3 °C, the first speed can be 6 ± 1 L / min, the third time can be 30 ± 1 min, the third temperature can be 950 ± 3 °C, the fourth time can be 20 ± 1 min, the first rate can be 3.5 ± 1 L / min, the second rate can be 6.5 ± 1 L / min, the fifth time can be 240 ± 1 min, the sixth time can be 20 ± 1 min, the seventh time can be 10 ± 1 min, the third rate can be 80 ± 1 mL / min, and the eighth time can be 120 ± 1 min. In this embodiment, first, the second substrate is placed in the quartz boat, and then the boat is advanced into the furnace tube of the quartz boat (boat speed 20 ± 1 cm / s). After the boat advancement is completed, the ground joint is covered, and nitrogen is introduced at 750 ± 3 °C (6 ± 1 liters per minute) for 30 ± 1 minutes. The temperature is raised from 750 °C to 950 °C, and the temperature is maintained at 950 ± 3 °C. Nitrogen is stopped and oxygen is introduced. After oxygen is introduced for 20 ± 1 minutes; oxygen and hydrogen are input into the quartz boat for hydrogen-oxygen synthesis. The hydrogen-oxygen synthesis time is 240 ± 1 minutes, wherein the oxygen introduction speed is 3.5 ± 1 liters per minute, and the hydrogen introduction speed is 6.5 ± 1 liters per minute; after the hydrogen-oxygen synthesis is completed, oxygen is introduced for another 20 ± 1 minutes, wherein the oxygen introduction speed is 3.5 ± 1 liters per minute; then trichloroethane is introduced for 10 ± 1 minutes, wherein the trichloroethane is 80 ± 1 milliliters per minute; then dry oxygen is introduced for 120 ± 1 minutes, and the temperature is lowered from 950 °C to 750 °C. The ground joint is removed, and the oxidized substrate after oxidation is taken out from the quartz boat (boat speed 20 ± 1 cm / s), and the oxidation process of the second substrate is completed.

[0088] In an embodiment of the invention being applied, lithography, boron implantation, and cleaning processes are sequentially performed on an oxidized substrate, and the obtained substrate wafer includes:

[0089] Glue coating, pre-baking, alignment, development, fixing, hardening, oxide layer etching, and glue removal processes are sequentially performed on the oxide layer of the oxidized substrate to obtain a lithographic substrate;

[0090] Boron is implanted into the lithographic substrate at a first dose and a first energy to obtain a third substrate;

[0091] The third substrate is first cleaned with a cleaning solution at a first temperature and for a first time, and then cleaned with clean water for a second time to obtain a substrate wafer.

[0092] Further, the first dose can be 3 - 8E13, and the first energy can be 50 Kev. In this embodiment, the processes of sequentially performing glue coating, pre-baking, alignment, development, fixing, hardening, oxide layer etching, and glue removal on the oxide layer of the oxidized substrate to obtain a lithographic substrate are specifically as follows: A photoresist with a viscosity of 100 ± 1 SC and a coating thickness of 28500 ± 2000 Å is used to coat the oxidized substrate, and then the coated oxidized substrate is dried in an oven at 85 ± 5 °C for 30 ± 1 minute; A mask plate is set on the oxidized substrate, and the oxidized substrate with the set mask plate is exposed under a mercury lamp of a lithography machine for 22 ± 1 second to form an image of the mask layout on the surface of the oxidized substrate; The masked oxidized substrate is first developed with xylene for 10 ± 1 second, and then fixed with butyl acetate for 8 ± 1 second; The fixed oxidized substrate is dried in an oven at 140 °C - 155 °C for 30 ± 1 minute; The hardened oxidized substrate is etched with a corrosion solution of H 2 O:NH 4 F = 6:1 for 10 ± 1 minute; The oxidized substrate after oxide layer etching is soaked in a soaking solution of H 2 SO 4 :H 2 O 2 = 3:1 for 10 ± 1 minute to remove the photoresist and obtain a lithographic substrate. Boron is implanted into the lithographic substrate at an implantation dose of 3 - 8E13 and an energy of 50 Kev to obtain a third substrate. The third substrate is cleaned with a cleaning solution of NH 3 H 2 O:H 2 O 2 :H 2 O = 1:1:5 and a cleaning solution of HCL:H 2 O 2 :H 2 O = 1:1:5 at a first temperature for a first time respectively, and then rinsed with clean water for a second time, and dried by centrifugation to obtain a substrate wafer.

[0093] In the embodiment of the invention under application, metal evaporation, metal lithography, metal etching, metal stripping, and alloying treatment are sequentially performed on the front side of the substrate silicon wafer to obtain the silicon wafer to be laminated, including:

[0094] Evaporate metals titanium and aluminum on the front side of the substrate silicon wafer to obtain a first silicon wafer;

[0095] Perform coating, pre-baking, alignment, development, fixing, and hardening film treatment on the first silicon wafer in sequence to obtain a second silicon wafer;

[0096] Perform front-side aluminum metal etching, titanium metal etching, and wafer surface treatment with an EDTA etching solution on the second silicon wafer in sequence to obtain a third silicon wafer;

[0097] Treat the front-side metal of the third silicon wafer using a stripping process to obtain a fourth silicon wafer;

[0098] Synthesize the metal layer of the fourth silicon wafer using a fourth temperature and alloying time to obtain the silicon wafer to be laminated.

[0099] Furthermore, the fourth temperature can be 420 ± 10 °C, and the alloying time can be 30 ± 1 min. In the manufacturing method of this silicon-based resistor, metal evaporation for welding is performed on the front side of the substrate silicon wafer. During the evaporation of metals, the evaporated metal Ti = 1000 ± 100 Å, and the evaporated metal AL = 40000 ± 1000 Å. Then, coating, pre-baking, alignment, development, fixing, and hardening film treatment are sequentially performed on the first silicon wafer to achieve front-side metal lithography of the first silicon wafer to obtain a second silicon wafer. The specific content of front-side metal etching of the second silicon wafer is as follows: First, use an etching solution of HAC:HNO 3 = 3:1, an etching temperature of 19 ± 1 °C, and an etching time of 600 ± 10 Sec to etch the AL metal on the front side of the second silicon wafer; secondly, use a PBE solution etching solution at an etching temperature of 23 ± 3 °C and an etching time of 10 ± 1 Sec to etch the Ti metal on the front side of the second silicon wafer; finally, use an EDTA etching solution at an etching time of 15 ± 1 Sec to perform wafer surface treatment on the second silicon wafer to obtain a third silicon wafer. The PBE solution etching solution is composed of a mixture of (8.6~9.2)% HNO 3 , (1.87~2.17)% HF, and (3.2~4.2)% HAC solution.

[0100] In this embodiment, the content of metal lithography includes: applying a photoresist with a viscosity of 100 ± 1 SC and a coating thickness of 28500 ± 2000 Å on the first silicon wafer, and then drying the coated first silicon wafer in an oven at 85 ± 5 °C for 30 ± 1 minutes; setting a mask on the first silicon wafer, and exposing the first silicon wafer with the set mask under a mercury lamp of a lithography machine for 22 ± 1 seconds to image the mask layout onto the surface of the first silicon wafer; developing the masked first silicon wafer with xylene for 10 ± 1 seconds first, and then fixing it with butyl acetate for 8 ± 1 seconds; drying the fixed first silicon wafer in an oven at 140 °C to 155 °C for 30 ± 1 minutes.

[0101] In this embodiment, the content of obtaining the EDTA etching solution includes:

[0102] Put 131 g of ethylenediaminetetraacetic acid into a beaker, pour 1000 ml of deionized water into the beaker and stir to obtain an EDTA emulsion;

[0103] Pour 280 ml of ammonia water into the EDTA emulsion in the beaker and stir to obtain an EDTA mixture;

[0104] Pour 3000 ml of hydrogen peroxide and 6000 ml of deionized water into the EDTA mixture in the beaker in sequence and stir and mix to obtain the EDTA etching solution.

[0105] In the embodiment of the claimed invention, the photoresist stripping process includes:

[0106] Obtain a first photoresist stripping tank and a second photoresist stripping tank that meet the temperature requirements and have stripping liquid, a third photoresist stripping tank with methanol liquid, and a fourth photoresist stripping tank and a fifth photoresist stripping tank with isopropanol liquid;

[0107] Put the third silicon wafer into the first photoresist stripping tank for photoresist stripping treatment according to the second time to obtain a first photoresist-stripped silicon wafer;

[0108] Put the first photoresist-stripped silicon wafer into the second photoresist stripping tank for rinsing according to the ninth time to obtain a second photoresist-stripped silicon wafer;

[0109] Put the second photoresist-stripped silicon wafer into the fourth photoresist stripping tank for rinsing according to the tenth time to obtain a third photoresist-stripped silicon wafer;

[0110] Put the third photoresist-stripped silicon wafer into the fifth photoresist stripping tank for rinsing according to the tenth time to obtain a fourth photoresist-stripped silicon wafer;

[0111] Put the fourth photoresist-stripped silicon wafer into the third photoresist stripping tank for rinsing according to the tenth time to obtain a fifth photoresist-stripped silicon wafer;

[0112] Put the fifth photoresist-stripped silicon wafer into a three-stage flushing tank for flushing to obtain a sixth photoresist-stripped silicon wafer;

[0113] The sixth degummed silicon wafer is spin-dried to obtain the fourth silicon wafer.

[0114] Furthermore, the temperature of the first degumming tank can be 90±5°C, the temperature of the second degumming tank can be 50±5°C, the ninth time can be 60±10 s, and the tenth time can be 180±10 s. The specific content of the degumming process in the manufacturing method of this silicon-based resistor includes: first, put the third silicon wafer into the first degumming tank, and at the same time turn on the timer of the first degumming tank for degumming for 10±1 minutes; after the degumming in the first degumming tank is completed, put the first degummed silicon wafer into the second degumming tank and turn on the timer of the second degumming tank for rinsing for 1 minute±10 seconds; after the process in the second degumming tank is completed, put the second degummed silicon wafer into the fourth degumming tank, and at the same time turn on the timer for rinsing for 3 minutes±10 seconds; after the rinsing in the fourth degumming tank is completed, put the third degummed silicon wafer into the fifth degumming tank, and at the same time turn on the timer for rinsing for 3 minutes±10 seconds; after the rinsing in the fifth degumming tank is completed, put the fourth degummed silicon wafer into the third degumming tank, and at the same time turn on the timer for rinsing for 3 minutes±10 seconds; after the rinsing in the third degumming tank is completed, put the fifth degummed silicon wafer into a three-stage flushing tank (the first-stage flushing is 10±1 minutes, the second-stage flushing is 10±1 minutes, and the third-stage flushing is 10±1 minutes), and at the same time turn on the N2 valve of the flushing tank to bubble; put the sixth degummed silicon wafer after flushing into a special spin-dryer for the metal layer for spin-drying, with a spraying speed of 300 rpm, a spraying time t = 5±1 minutes, and a spin-drying speed of 900 rpm for spin-drying for t = 10±1 minutes to obtain the fourth silicon wafer.

[0115] In the embodiment of the invention applied for, the silicon wafer to be laminated is sequentially subjected to lamination, corrosion, and metal evaporation treatments to obtain a silicon-based resistor with the same resistance value, including:

[0116] After laminating the front side of the silicon wafer to be laminated, a laminated silicon wafer is obtained;

[0117] The back metal of the laminated silicon wafer is corroded by a corrosion process to obtain a silicon wafer to be evaporated;

[0118] The back metal of the silicon wafer to be evaporated is sequentially subjected to metal titanium, metal nickel, and metal silver evaporation treatments to obtain a silicon-based resistor with the same resistance value;

[0119] The corrosion process includes:

[0120] The back metal of the laminated silicon wafer is corroded by a stress-relieving corrosion solution at the twelfth time and the first corrosion temperature to obtain a first-corroded silicon wafer;

[0121] The first-corroded silicon wafer is corroded by a decontamination corrosion solution at the thirteenth time and the second corrosion temperature to obtain a second-corroded silicon wafer;

[0122] The second etched silicon wafer is etched with a buffered oxide etchant at the fourteenth time and the third etching temperature to obtain a silicon wafer to be evaporated.

[0123] Further, the twelfth time can be 450±20 s, the first etching temperature can be 19±1 °C, the thirteenth time can be 300±20 s, the second etching temperature can be 23±3 °C, the fourteenth time can be 300±20 s, and the third etching temperature can be 23±3 °C. The stress-relieving etchant is composed of (49~51)% nitric acid HNO 3 : (0.6~0.8)% hydrogen fluoride HF: (2.3~2.9)% acetic acid HAC: (44.81~49.21)% water. The cleaning etchant is composed of water H 2 O: ammonium fluoride NH 4 F: hydrogen peroxide H 2 O 2 = 10:1:1. The buffered oxide etchant is composed of ammonium fluoride NH 4 F: hydrogen fluoride HF = 10:1. In this embodiment, the amounts of metal evaporation on the back surface of the silicon wafer to be evaporated include titanium Ti = 1000±100 Å, nickel Ni = 2000±100 Å, and silver Ag = 12000±1000 Å.

[0124] Embodiment 2:

[0125] Figure 2 The structural schematic diagram of the silicon-based resistor provided by an embodiment of the present application.

[0126] As Figure 2 shown, the present invention also provides a silicon-based resistor manufactured by the manufacturing method of the above silicon-based resistor, including a silicon substrate layer 1, a first metal layer 2 located above the silicon substrate layer 1, and a second metal layer 3 located below the silicon substrate layer 1.

[0127] Further, the content of the manufacturing method of the silicon-based resistor has been described in Embodiment 1 and will not be repeated in this embodiment. The silicon-based resistor is manufactured by the manufacturing method of the silicon-based resistor, with low manufacturing cost and convenient installation. The silicon-based resistor belongs to surface mount packaging and has a small footprint.

[0128] In the description of the present application, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more features.

[0129] The manufacturing method of the silicon-based resistor provided by an embodiment of the present application has been introduced in detail above. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A method for manufacturing a silicon-based resistor, characterized in that: The following steps are involved: Acquire a resistor substrate and material data of the resistor substrate, and calculate the resistance value of the resistor to be manufactured according to the material data, wherein the material data includes the resistivity, length and area of ​​the resistor substrate; The resistor substrate is sequentially cleaned and oxidized to obtain an oxidized substrate; The oxidized substrate is sequentially subjected to photolithography, boron implantation and cleaning processes to obtain a substrate silicon wafer; The front side of the substrate silicon wafer is subjected to metal evaporation, metal photolithography, metal corrosion, metal degumming and alloy treatment in sequence to obtain a silicon wafer to be laminated; The silicon wafer to be film-mounted is subjected to film-mounting, corrosion and metal evaporation treatments in sequence to obtain a silicon-based resistor with the same resistance value as the above-mentioned; The front side of the substrate silicon wafer is subjected to metal evaporation, metal photolithography, metal corrosion, metal degumming and alloy treatment in sequence to obtain a silicon wafer to be laminated, comprising: Performing evaporation treatment on the front metal titanium and aluminum of the substrate silicon wafer to obtain a first silicon wafer; The first silicon wafer is sequentially subjected to glue coating, pre-baking, alignment, development, fixing and film hardening treatments to obtain a second silicon wafer; The second silicon wafer is sequentially subjected to front metal aluminum etching, metal titanium etching and wafer surface treatment using EDTA etching solution to obtain a third silicon wafer; The front metal of the third silicon wafer is processed by a degumming process to obtain a fourth silicon wafer; Synthesizing the metal layer of the fourth silicon wafer using a fourth temperature and alloying time to obtain a silicon wafer to be laminated; The silicon wafer to be film-mounted is subjected to film-mounting, corrosion and metal evaporation treatments in sequence to obtain a silicon-based resistor with the same resistance value as the above-mentioned resistor, which comprises: After laminating the front side of the silicon wafer to be laminarized, a laminarized silicon wafer is obtained; The back metal of the film-attached silicon wafer is corroded by an etching process to obtain a silicon wafer to be evaporated; The back metal of the silicon wafer to be evaporated is subjected to metal titanium, metal nickel and metal silver evaporation treatments in sequence to obtain a silicon-based resistor with the same resistance value as the above-mentioned.

2. The method for manufacturing a silicon-based resistor according to claim 1, characterized in that: The resistor substrate is sequentially cleaned and oxidized to obtain an oxidized substrate, comprising: Using a cleaning liquid to clean the resistor substrate at a first temperature and for a first time to obtain a first substrate; The first substrate is cleaned with clean water for a second time and then dried to obtain a second substrate; performing oxidation treatment on the second substrate by using an oxidation process to obtain an oxidized substrate; Wherein, the first temperature is 75±5°C, the first time is 10 minutes, and the second time is 10±1 minutes.

3. The method for manufacturing a silicon-based resistor according to claim 2, characterized in that: The oxidation process comprises: placing the second substrate in a sealed quartz boat, and inputting nitrogen gas at a first speed for a third time on the quartz boat at a second temperature to obtain a first oxidation stage; In the first oxidation stage, the temperature of the quartz boat is increased to a third temperature, the nitrogen gas input to the quartz boat is stopped, and the oxygen gas input to the quartz boat is switched to a fourth time, thereby obtaining a second oxidation stage; In the second oxidation stage, oxygen is input into the quartz boat at a first rate and hydrogen is input into the quartz boat at a second rate at the same time and hydrogen-oxygen synthesis is performed for a fifth time, thereby obtaining a third oxidation stage; In the third oxidation stage, oxygen is input into the quartz boat at the first rate and for a sixth time, thereby obtaining a fourth oxidation stage; In the fourth oxidation stage, trichloroethane is input into the quartz boat at a third rate and a seventh time to obtain a fifth oxidation stage; In the fifth oxidation stage, dry oxygen is input into the quartz boat for an eighth time and the temperature of the quartz boat is reduced from the third temperature to the second temperature to obtain the oxidized substrate; Among them, the second temperature is 750±3℃, the first speed is 6±1L / min, the third time is 30±1min, the third temperature is 950±3℃, the fourth time is 20±1min, the first rate is 3.5±1L / min, the second rate is 6.5±1L / min, the fifth time is 240±1min, the sixth time is 20±1min, the seventh time is 10±1min, the third rate is 80±1mL / min, and the eighth time is 120±1min.

4. The method for manufacturing a silicon-based resistor according to claim 1, characterized in that: The oxidized substrate is subjected to photolithography, boron implantation and cleaning treatments in sequence to obtain a substrate silicon wafer, comprising: The oxide layer of the oxide substrate is subjected to sequential treatments of coating, pre-baking, alignment, development, fixing, film hardening, oxide layer etching and degumming to obtain a photolithography substrate; implanting boron into the photolithography substrate at a first dose and a first energy to obtain a third substrate; The third substrate is first cleaned with a cleaning solution at a first temperature and a first time, and then cleaned with clean water for a second time to obtain a substrate silicon wafer; Wherein, the first time is 10 minutes, the second time is 10±1 minutes, and the first temperature is 75±5°C.

5. The method for manufacturing a silicon-based resistor according to claim 1, characterized in that: include: Obtaining the EDTA etching solution, wherein the content of obtaining the EDTA etching solution comprises: 131 g of ethylenediaminetetraacetic acid was placed in a beaker, and 1000 ml of deionized water was injected into the beaker and stirred to obtain an EDTA emulsion; Inject 280 ml of ammonia water into the EDTA emulsion in the beaker and stir to obtain an EDTA mixed solution; 3000 ml of hydrogen peroxide and 6000 ml of deionized water were injected into the EDTA mixed solution in the beaker in sequence and stirred to obtain the EDTA etching solution.

6. The method for manufacturing a silicon-based resistor according to claim 1, characterized in that: The degumming process comprises: Obtain a first degumming cylinder and a second degumming cylinder with stripping liquid that meet the temperature requirements, obtain a third degumming cylinder with methanol liquid, and obtain a fourth degumming cylinder and a fifth degumming cylinder with isopropanol liquid; placing the third silicon wafer into the first debonding tank for a second time to perform debonding treatment to obtain a first debonded silicon wafer; placing the first debonded silicon wafer into the second debonding tank for rinsing for a ninth time to obtain a second debonded silicon wafer; placing the second debonded silicon wafer into the fourth debonding tank for rinsing for a tenth time to obtain a third debonded silicon wafer; placing the third debonded silicon wafer into the fifth debonding tank and rinsing it for the tenth time to obtain a fourth debonded silicon wafer; placing the fourth debonded silicon wafer into the third debonding tank and rinsing it for the tenth time to obtain a fifth debonded silicon wafer; placing the fifth debonded silicon wafer into a three-stage flushing tank for flushing to obtain a sixth debonded silicon wafer; Using a spin dryer to spin dry the sixth debonded silicon wafer to obtain a fourth silicon wafer; Among them, the second time is 10±1min, the ninth time is 60±10s, and the tenth time is 180±10s.

7. The method for manufacturing a silicon-based resistor according to claim 1, characterized in that: The corrosion process includes: The back metal of the film-attached silicon wafer is subjected to etching treatment using a stress relief etching solution for a twelfth time and a first etching temperature to obtain a first etching silicon wafer; The first etched silicon wafer is etched with a decontamination etchant for a thirteenth time and a second etch temperature to obtain a second etched silicon wafer; The second etched silicon wafer is etched with a buffered oxide etchant for a fourteenth time and at a third etching temperature to obtain the silicon wafer to be evaporated; Among them, the twelfth time is 450±20s, the first corrosion temperature is 19±1°C, the thirteenth time is 300±20s, the second corrosion temperature is 23±3°C, the fourteenth time is 300±20s, and the third corrosion temperature is 23±3°C.

8. A silicon-based resistor manufactured by the method for manufacturing a silicon-based resistor according to any one of claims 1 to 7, characterized in that: The invention comprises a silicon-based layer, a first metal layer located above the silicon-based layer and a second metal layer located below the silicon-based layer.

Images