Temperature adjusting device and chemical vapor deposition device

Abstract

The invention discloses a temperature adjusting device and a chemical vapor deposition device. The chemical vapor deposition device comprises a cavity, a temperature adjusting device and a chemical vapor deposition device, the gas supply part is arranged at the top of the cavity and comprises a plurality of circles of gas channels, and the maximum radial size of the outermost circle of gas channel is a first length; the carrying table is arranged at the bottom of the cavity, is opposite to the gas supply part and is used for carrying the substrate; the cavity further comprises a lining which is located in the cavity and surrounds the inner side wall of the cavity. The side heater is located between the lining and the inner side wall of the cavity, located above the carrying table and used for heating the process gas in the cavity, the temperature adjusting cylinder is arranged in the cavity and located above the carrying table, and the temperature adjusting cylinder emits heat to heat the process gas in the center area of the cavity. The maximum radial size of the end, close to the gas supply part, of the temperature adjusting cylinder (500) is the second length, and the second length is smaller than or equal to the first length. The radial temperature gradient can be reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processing equipment, and in particular to a temperature regulating device and a chemical vapor deposition device. Background Art

[0002] Existing vapor phase epitaxial growth devices, such as chemical vapor deposition (CVD) devices, include a furnace body or a cavity, a cavity cover, which is arranged at the top of the cavity, and a shower head arranged on the cavity cover, and the shower head is used to introduce process gas for growing thin films into the cavity. A loading table is arranged at the bottom of the cavity and is arranged opposite to the shower head. The loading table is provided with a loading surface for carrying a substrate, and a lower heater is also provided below the loading surface for heating the substrate so that the substrate can meet the temperature conditions for growing thin films thereon. A side heater is arranged close to the inner wall of the cavity and is used to heat the process gas in the cavity.

[0003] Since the heater of the above-mentioned vapor phase epitaxial growth device includes a lower heater located at the bottom of the chamber and a sidewall heater located at the sidewall, it can be seen that this causes the process gas temperature at the inlet of the device to be relatively low. At the same time, due to the presence of the sidewall heater, the sidewall temperature is relatively high, and there is a large radial temperature difference in the radial direction. Then the large radial temperature difference will induce natural convection caused by buoyancy, so that there is a certain amount of reflux (eddy current) on the hot wall side. Since the temperature on the hot wall side is very high, for example, when preparing SiC film, after the carbon source and silicon source are decomposed, the eddy current carries the decomposition products to the vicinity of the sidewall and the top cover, causing SixCy deposition, increasing the loss of carbon source and silicon source and affecting the C / Si ratio above the substrate, making the reaction conditions uncontrollable.

[0004] In addition, the high temperature gradient above the substrate makes the main reaction species very sensitive to temperature fluctuations, which may lead to unstable growth conditions for the thin film grown on the substrate, resulting in variations in thickness and doping uniformity of the generated film. Summary of the invention

[0005] The purpose of the present invention is to provide a temperature regulating device and a chemical vapor deposition device to solve the problem that the film generation conditions are difficult to control, the film thickness and doping uniformity are poor, etc., caused by the excessively large radial temperature gradient inside the cavity and the large axial temperature gradient along the axial direction of the cavity.

[0006] In order to solve the above problems, the present invention provides a chemical vapor deposition device, comprising: a cavity; a gas supply part (201), which is arranged at the top of the cavity and includes a plurality of circles of gas channels arranged radially, and the maximum radial dimension of the gas channels in the outermost circle is a first length; a mounting table (400), which is arranged at the bottom of the cavity and is opposite to the gas supply part (201) and is used to carry a substrate (700); a sleeve, which is located inside the cavity and is arranged around the inner side wall of the cavity; a side heater (601), which is located between the sleeve and the inner side wall of the cavity and is located above the mounting table (400) and is used to heat the gas in the cavity; a temperature regulating tube (500), which is arranged inside the cavity and is located above the mounting table (400), and the sleeve is located between the side heater and the temperature regulating tube, and the maximum radial dimension of one end of the temperature regulating tube (500) close to the gas supply part is a second length, and the second length is less than or equal to the first length.

[0007] Correspondingly, a temperature regulating device is also provided, which is applied to the cavity of the above-mentioned chemical vapor deposition device. The temperature regulating device includes: a temperature regulating tube and a connecting piece. The temperature regulating tube is arranged inside the cavity and is used to heat the process gas in the central area of ​​the cavity. The connecting piece is used to realize the connection between the temperature regulating tube and the cavity.

[0008] Compared with the prior art, the present invention has at least one of the following advantages:

[0009] In a chemical vapor deposition device provided by the present invention, the process gas in the central area of ​​the cavity is heated by a temperature regulating cylinder, thereby reducing the temperature gradient in the radial direction inside the cavity, solving the problem of gas vortex generated above the substrate due to the high gas temperature in the area close to the side heater and the low gas temperature in the central area and the downward flow, thereby reducing the byproduct deposition on the side walls of the cavity (specifically the side walls of the upper and lower bushings) and the accessories of the shower head. The utilization rate of the process gas source is improved, and the maintenance cycle of the side walls of the upper and lower bushings and the shower head is extended.

[0010] The temperature regulating tube can also reduce the temperature gradient above the substrate, making the growth conditions of the substrate more stable, thereby improving the thickness of the thin film growth and the uniformity of doping on the entire substrate.

[0011] The temperature regulating tube is a hollow cylindrical tube, and the process gas in the central area can flow to the surface of the substrate through the center of the temperature regulating tube, thereby facilitating the stable growth conditions of the substrate. By setting the diameter of the temperature regulating tube (specifically, the inner diameter) to be larger than the diameter of the substrate in some embodiments, particulate contaminants that may exist on the temperature regulating tube can be prevented from falling onto the surface of the substrate, thereby further improving the quality of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a structural schematic diagram of a chemical vapor deposition device of the present invention;

[0013] Figure 2 It is a top view of a gas supply part and a temperature regulating cylinder of the present invention;

[0014] Figures 3 to 5 yes Figure 1 Structural schematic diagrams of different embodiments of the temperature regulating device;

[0015] Figure 6 and Figure 7 Schematic diagrams of the structures of different embodiments of the chemical vapor deposition device of the present invention;

[0016] Figure 8 and Fig. 9 It is a schematic diagram of the structure of the temperature regulating cylinder of different embodiments;

[0017] Figures 10 to 12 Schematic diagrams of the structures of different embodiments of the chemical vapor deposition device of the present invention. DETAILED DESCRIPTION

[0018] The following is a further detailed description of a temperature regulating cylinder and a chemical vapor deposition device proposed in the present invention in combination with the accompanying drawings and specific embodiments. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the drawings are in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In order to make the purposes, features and advantages of the present invention more obvious and easy to understand, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no technical substantive significance. Any structural modification, change in proportional relationship or adjustment of size, without affecting the effects that can be produced by the present invention and the purposes that can be achieved, should still fall within the scope of the technical content disclosed by the present invention.

[0019] Figure 1 It is a structural schematic diagram of a chemical vapor deposition device of the present invention; Figure 2 yes Figure 1A top view of a gas supply unit and a temperature regulating cylinder; Figures 3 to 5 yes Figure 1 Schematic diagram of the structure of different embodiments of the temperature adjustment device.

[0020] Please refer to Figure 1 The chemical vapor deposition device includes: a cavity, which includes: an upper cavity 101; a gas supply part 201, which is arranged above the upper cavity 101 and is used to introduce process gas for thin film growth into the interior of the cavity; a mounting table 400, which is arranged at the bottom of the cavity, opposite to the gas supply part 201, and is used to carry a substrate 700; a bushing, which is located inside the cavity and is arranged around the inner wall of the cavity, and the bushing includes: an upper bushing 301 and a lower bushing 302, the lower bushing 302 is located on the periphery of the mounting table 400, the upper bushing 301 is located above the lower bushing 302, the size of the top of the upper bushing 301 is smaller than the size of the bottom, so that the gas flow is smoother and it is not easy to form vortices on the surface of the substrate 700, and the bushing is used to protect the inner wall of the cavity from being contaminated. The lower sleeve 302 can move between the process position and the substrate picking and placing position. When the substrate is picked and placed, the lower sleeve 302 moves downward to expose the wafer picking port of the cavity. This position is called the substrate picking and placing position. The robot passes through the wafer picking port of the cavity and the upper edge of the lower sleeve to pick and place the substrate 700. After the substrate is placed, the robot moves out and the lower sleeve 302 moves upward to the process position to cover the wafer picking port to ensure the uniformity of the circumferential temperature of the substrate.

[0021] The side heater 601 is located between the upper bushing 301 and the inner wall of the upper cavity 101, and is located above the mounting table 400, and is used to heat the process gas inside the cavity. The upper insulation tube 801 is arranged between the side heater 601 and the upper cavity 101. Since the temperature required by the chemical vapor deposition device is relatively high, the side heater 601 needs to provide a relatively high heating temperature, for example, more than 1000°C. The upper insulation tube 801 is arranged between the side heater 601 and the upper cavity 101, which can effectively limit the heat of the side heater 601 inside the cavity, reduce the heat loss in the cavity, and prevent the outer wall of the upper cavity 101 from overheating, which is conducive to ensuring the safety of the operator working here.

[0022] The lower heater 600 is disposed in the mounting table 400 and is used to heat the substrate 700 .

[0023] The lower insulation tube 802 is arranged between the lower cavity 102 and the lower bushing 302. Since the temperature required by the chemical vapor deposition device is relatively high, the lower heater 600 needs to provide a relatively high heating temperature, for example, exceeding 1000°C. The present invention arranges the lower insulation tube 802 between the lower cavity 102 and the lower bushing 302, which can effectively limit the heat of the side heater inside the cavity, reduce the heat loss in the cavity, and prevent the outer wall of the upper cavity 101 from overheating, which is beneficial to ensure the safety of the operator working here.

[0024] The gas supply unit 201 is also provided on the upper chamber 101 . The gas supply unit 201 is provided on the upper chamber 101 .

[0025] Figure 2 It is a schematic diagram of the dimensions of a gas supply unit and a temperature regulating cylinder of the present invention.

[0026] Please refer to Figure 2 The gas supply part 201 includes several circles of gas channels 210, and the several circles of gas channels 210 are arranged radially. Each circle of the gas channels 210 is formed by several gas through holes arranged in a circular ring shape. In fact, there is no limitation on the gas channels 210. For example, the gas channels 210 can also be an annular groove structure. In other embodiments, in order to adjust the distribution of process gases, the gas through holes can also be arranged irregularly, which is not limited here. The maximum radial dimension of the outermost circle of the gas channel 210 is defined as the first length Φ1. It should be noted that when the gas channel 210 is a perfect circle, the first dimension Φ1 is the diameter of the outermost circle of the gas channel 210. Figure 2 As shown; when the gas channel 210 is a non-circular or polygonal shape, the first dimension Φ1 is the radial distance between the two gas through holes that are farthest apart in the outermost circle gas channel.

[0027] It should be noted here that the gas channel 210 also includes several inner-circle gas channels, and several inner-circle gas channels are located inside the outermost circle gas channel; the outermost circle gas channel is used to transport purge gas or process gas; and several inner-circle gas channels are used to transport process gas into the cavity.

[0028] In the present invention, the gas supply part 201 is arranged above the cavity, the temperature regulating tube 500 is arranged inside the cavity, located above the loading platform 400, and the maximum radial dimension of the end of the temperature regulating tube 500 close to the gas supply part 201 is the second length Φ2. It should be noted that when the temperature regulating tube 500 is a perfect circle, the second dimension Φ2 is the outer tube diameter of the temperature regulating tube 500 close to the gas supply part 201; when the temperature regulating tube 500 is not a perfect circle, the second dimension Φ2 is the maximum dimension of the outer wall of the temperature regulating tube 500 along the radial direction.

[0029] In this embodiment, the second length Φ2 is less than or equal to the first length Φ1, so that a gap is formed between the temperature regulating tube 500 and the upper sleeve 301. Then, the gas flowing out from the outermost circle of the gas supply part 201 will flow through the gap to the surface of the substrate 700, and this part of the gas will be heated by the side heater 601; at the same time, the gas flowing out from the inner circle of the gas supply part 201 will enter the temperature regulating tube 500 and flow toward the surface of the substrate 700. The gas flowing out from the inner circle of the gas supply part 201 is heated by the temperature regulating tube 500 in the process of flowing through the temperature regulating tube 500, thereby reducing the temperature gradient in the radial direction inside the cavity, solving the problem of gas vortex generated above the substrate 700 due to the high gas temperature in the area close to the side heater 601 and the low gas temperature in the central area and the downward flow, thereby reducing the side walls of the cavity (specifically the side walls of the upper sleeve 301 and the lower sleeve 302) and the deposition of by-products on the gas supply part 201. The utilization rate of the process gas source is improved, and the maintenance period of the side walls of the upper bushing 301 and the lower bushing 302 and the gas supply unit 201 is extended. The temperature regulating cylinder 500 can also reduce the temperature gradient of different areas above the substrate, making the growth conditions of the substrate more stable, thereby improving the uniformity of thickness and doping.

[0030] Please refer back to Figure 1 The temperature regulating tube 500 is fixedly connected to the cavity through a connecting piece 510. Specifically, the temperature regulating tube 500 can be connected to the upper bushing 301 through the connecting piece 510. The temperature regulating tube 500 and the connecting piece 510 constitute a temperature regulating device. The temperature regulating device is described in detail as follows:

[0031] Please refer to Figure 3The temperature regulating device includes: a temperature regulating tube 500 and a connecting member 510, wherein the connecting member 510 includes an annular portion 511 and a plurality of connecting rods 512, wherein the connecting rods 512 are arranged inside the annular portion 511 and are arranged radially, wherein one end of each connecting rod 512 is connected to the inner wall of the annular portion 511, and the other end is connected to the top of the temperature regulating tube 500, and two adjacent connecting rods 512, the inner wall of the annular portion 511 and the outer wall of the temperature regulating tube 500 form an arc channel. In one embodiment, as Figure 3 As shown, there are four connecting rods 512 , which are centrally symmetrically arranged.

[0032] It is understandable that the number of the connecting rods 512 is not limited thereto. Optionally, the number of the connecting rods 512 may be greater than or equal to 2, as long as the temperature regulating cylinder 500 can be fixed without affecting the uniformity of the process gas transmitted to the substrate surface.

[0033] The annular portion 511, the connecting rod 512 and the temperature regulating tube 500 may be integrated. In another embodiment, the three components may be manufactured separately and then connected and fixed mechanically or by welding. The present invention does not limit the connection method.

[0034] In the present invention, the gas through hole 210 supplies process gas participating in the thin film growth process on the surface of the substrate 700 to the reaction chamber. For example, when a silicon carbide thin film is grown on the surface of the substrate 700, the process gas through hole 210 supplies a carbon source gas (e.g., propane) and a silicon source gas (e.g., silane) to the reaction chamber.

[0035] In this embodiment, the temperature regulating tube 500 and the connecting part 510 are made of graphite material. In other embodiments, the temperature regulating tube 500 and the connecting part 510 can also be made of silicon carbide, tantalum carbide or high-temperature resistant metals such as tungsten, molybdenum, tantalum and the like. Depending on the different processing processes of different chemical vapor deposition devices, when selecting the material of the temperature regulating tube, it is necessary to ensure that the process gas does not react with the surface of the temperature regulating tube.

[0036] In this embodiment or other embodiments, the surfaces of the temperature regulating tube 500 and the connecting piece 510 are provided with at least one high-temperature resistant coating of silicon carbide or tantalum carbide. At this time, the main material of the temperature regulating tube 500 and the connecting piece 510 can be graphite or high-temperature resistant metal. By providing a high-temperature resistant coating such as silicon carbide and / or tantalum carbide on the surface of the main material, the cost of the temperature regulating tube can be reduced, and at the same time, the main material can be protected to avoid damage to the main material caused by process gases.

[0037] In the same embodiment, the temperature regulating tube 500 and the connecting member 510 may be made of the same material or different materials, and the present invention does not impose any specific limitation thereto.

[0038] Please refer to Figure 3 The temperature regulating tube 500 has openings at both ends and is hollow inside, including an upper end close to the gas supply part 201 and a lower end close to the substrate 700. In the present embodiment, the temperature regulating tube 500 is a cylindrical tube structure. In fact, the temperature regulating tube 500 can also be a polyhedral columnar structure, for example: the temperature regulating tube 500 is a tetrahedral structure, a hexahedral structure or an octahedral structure, etc.

[0039] In this embodiment, the temperature regulating cylinder 500 is a continuous and complete cylindrical structure, and the gas channel 210 includes a central area and an edge area surrounding the central area, wherein the central area is opposite to the hollow area of ​​the cylindrical structure of the temperature regulating cylinder 500, and the edge area is opposite to the area between the temperature regulating cylinder 500 and the upper cavity 301, so that the gas flowing out from the central area of ​​the gas channel 210 enters the hollow cylindrical structure of the temperature regulating cylinder 500, and the gas flowing out from the edge area of ​​the gas channel 210 enters the gap between the temperature regulating cylinder 500 and the upper cavity 301, wherein the gas flowing out from the central area of ​​the gas channel 210 can be heated by the temperature regulating cylinder 500, and the gas flowing out from the edge area of ​​the gas channel 210 can be heated by the side heater 601, therefore, it is helpful to reduce the temperature gradient in the radial direction inside the cavity, and solves the problem of gas vortex generated above the substrate due to the high gas temperature in the area close to the side heater, which is easy to flow upward, and the low gas temperature in the central area, which is easy to flow downward.

[0040] In the present invention, the number of connecting rods 512 is four. It can be understood that the number of the connecting rods 512 is not limited thereto. Optionally, the number of the connecting rods 512 can be greater than or equal to 2, as long as the temperature regulating cylinder 500 can be fixed without affecting the uniformity of the process gas transmitted to the surface of the substrate 700.

[0041] The temperature regulating tube 500 is a cylindrical structure and can have many different designs, which are described in detail as follows:

[0042] exist Figure 4 In the embodiment, a hollow structure 524 is provided on the temperature regulating tube, and a first connecting portion 522 is provided between adjacent hollow structures 524. A second connecting portion 526 is reserved at the bottom of some of the hollow structures 524, and the bottom of some of the hollow structures 524 passes through the temperature regulating tube 500 along the flow direction G of the airflow.

[0043] You can also Figure 5In the embodiment, the bottom of each hollow structure 524 passes through the temperature regulating tube 500 along the flow direction G of the airflow.

[0044] According to actual needs, the hollow structure can be evenly or unevenly arranged on the temperature regulating tube. The hollow structure 524 is arranged on the temperature regulating tube 500, so that the gas between the upper cavity 301 and the temperature regulating tube 500 can diffuse into the hollow cylindrical structure through the hollow structure 524, and the gas in the hollow cylindrical structure can also diffuse into between the upper cavity 301 and the temperature regulating tube 500 through the hollow structure 524, that is, the gas between the upper cavity 301 and the temperature regulating tube 500 and the gas in the temperature regulating tube 500 can be mixed, so it is helpful to better reduce the temperature gradient in the radial direction inside the cavity, and solve the problem of gas vortex generated above the substrate due to the high gas temperature in the area close to the side heater, which is easy to flow upward, and the low gas temperature in the central area, which is easy to flow downward.

[0045] The ratio of the area of ​​the hollow structure 524 to the area of ​​the solid part of the temperature regulating tube is defined as the duty ratio of the hollow structure. Temperature regulating tubes with different duty ratios can be manufactured and selected according to needs. Temperature regulating tubes with different duty ratios have different regulating capabilities for temperature. For example, the duty ratio ranges from 10% to 80%, such as 25%, 47%, 56%, 68% or 75%.

[0046] There is no limitation on the shape of the hollow structure 524. In this embodiment, a long strip shape is used as an example for description. In fact, the hollow structure 524 can be circular, polygonal, etc.

[0047] exist Figure 6 In the embodiment, the diameters of the temperature regulating tube 500 at different heights are not completely the same, that is: Figure 6 In the direction of the cross-sectional view, the side wall of the temperature regulating cylinder 500 is wavy from top to bottom, so a certain part of the temperature regulating cylinder 500 is closer to the side heater 601, and another part of the temperature regulating cylinder 500 is closer to the center of the cavity. By setting the cylinder diameter of the temperature regulating cylinder 500 at different heights, different parts of the wavy surface receive different radiation energies from the side wall heater, which will produce different temperature distributions, thereby realizing the adjustment of the temperature field in the central area of ​​the cavity, reducing the temperature gradient in the radial direction inside the cavity, and solving the problem of gas vortex above the substrate caused by the high gas temperature in the area close to the side heater, which is easy to flow upward, and the low gas temperature in the central area, which is easy to flow downward.

[0048] Furthermore, since the diameters of the temperature regulating tube 500 at different heights are different, the surface roughness of the temperature regulating tube 500 is relatively large. Therefore, even if by-products are deposited on the surface of the temperature regulating tube 500, the by-products are not easy to fall off to the surface of the substrate 700, which is beneficial to reduce particulate contaminants.

[0049] exist Figure 7 In the embodiment, the surface roughness of different areas of the inner wall or outer wall of the temperature regulating cylinder 500 is not completely the same, or different areas are provided with different protrusions or depressions on the surface. The significance of such a setting is that the airflow can be guided to be regularized according to the desired flow direction, and the airflow field and the drop path of the sediment can be further optimized, the long-term operation stability of the reaction chamber can be improved, and the maintenance cycle can be extended. The protrusions or depressions can be continuous or intermittent; they can also be fins arranged in a matrix vertically or at a certain angle; they can also be arranged in a spiral shape, such as Figure 8 and Fig. 9 ,exist Figure 8 In the embodiment, a spiral airflow guide fin 550 is provided on the inner side wall of the temperature regulating cylinder 500; Fig. 9 As shown, a spiral airflow guide fin 550 is provided on the outer wall of the temperature regulating tube 500; the airflow guide fin 550 can guide the gas coming out of the gas supply part 201 to flow downward in a spiral direction, interrupt the vortex caused by the temperature difference, and further stabilize the flow field. At the same time, due to the increase in the radiation area, the efficiency of heating the gas is higher, and the temperature field is more uniform. In addition, the surface roughness of different areas of the temperature regulating tube 500 is not exactly the same, so by-products are deposited on the surface of the temperature regulating tube 500, and the by-products are not easy to fall off to the surface of the substrate 700, so it is helpful to reduce particulate contaminants.

[0050] The temperature regulating cylinder can be split type. Please refer to Fig.10 and Fig.11 .

[0051] exist Fig.10 In the embodiment, the temperature regulating tube 500 includes an upper regulating member 501 and a bottom regulating member 502 stacked up and down, the lower regulating member 502 is fixedly connected to the upper cavity 301 via a connecting member 510, the upper regulating member 501 is fixedly connected to the gas supply part 201, and the diameter of the upper regulating member 501 is smaller than the diameter of the outermost circle gas channel in the gas supply part 201, so that the gas flowing out of the gas supply part 201 is isolated by the upper regulating member 501, and it can be determined according to needs which circles of gas flow through the outside of the temperature regulating tube 501 and which circles of gas flow through the inside of the temperature regulating tube 501, for example Fig.10As shown in , the gas of the outermost circle and the second outer circle flows through the outside of the upper regulating member 501, and the gas of the remaining circles flows through the inside of the upper regulating member 501. The gas flowing out of the upper regulating member 501 is mixed with the gas flowing out of the outside thereof, and then redistributed and enters the inside and outside of the bottom regulating member 502 respectively. Fig.11 In the embodiment, the bottom of the upper adjusting member 501 is connected to the bottom adjusting member 502, so that the gas in the outermost circle flows through the outside of the upper adjusting member 501, and then enters the gap between the bottom adjusting member 502 and the upper sleeve 301, while the gas in the remaining circles flows through the inside of the upper adjusting member 501, and then flows into the inside of the bottom adjusting member 502. The gas in the outermost circle does not mix with the gas in the remaining circles, and the upper adjusting member 501 can adjust the flow field.

[0052] In the cavity, the temperature near the substrate surface is higher, therefore, the temperature of the bottom adjusting member 502 is higher than that of the upper adjusting member 501. The higher temperature is conducive to reaching the temperature for thin film growth. Therefore, it is easier for by-products to be formed on the bottom adjusting member 502 than on the upper adjusting member 501. The split design of the upper adjusting member 501 and the bottom adjusting member 502 requires only the bottom adjusting member 502 to be replaced, thus helping to save costs.

[0053] Similarly, the bottom adjusting member 502 can also be a split type stacked up and down, and the lower adjusting member is more likely to accumulate by-products. Only the adjusting member at the bottom of the bottom adjusting member 502 can be replaced, which is conducive to further saving costs.

[0054] The temperature regulating cylinder can also be an integrated one, such as Fig.12 As shown, the temperature regulating tube 500 is fixedly connected to the gas supply part 201, and the temperature regulating tube 500 extends axially to the top of the substrate. This design ensures that the gas flowing from the gas supply part into the temperature regulating tube 500 will not diffuse between the temperature regulating tube 500 and the inner wall of the cavity.

[0055] In the above embodiment, the diameter of the cylindrical temperature regulating tube is greater than or equal to the diameter of the substrate 700 and less than the inner diameter of the upper bushing 301. Optionally, in this embodiment, the diameter of the cylindrical temperature regulating tube is 180 mm. This shape of temperature regulating tube can better reduce the radial temperature gradient distribution of the process gas in the cavity (specifically the cavity bushing). At the same time, when the diameter of the temperature regulating tube is greater than the diameter of the substrate, the deposits that may be generated on the inner and outer walls of the temperature regulating tube will not fall to the surface of the substrate, which is beneficial to improving the quality of thin film growth of the substrate. At the same time, the diameter of the temperature regulating tube is not easy to be too large, because the temperature of the process gas near the center area of ​​the cavity (specifically the cavity bushing) is relatively low. If the diameter of the temperature regulating tube is too large, the heating effect of the process gas in the center area of ​​the cavity (specifically the cavity bushing) will become less obvious, which may not solve the technical problem to be solved by this embodiment.

[0056] In the above embodiment, the length of the temperature regulating tube is greater than 1 / 2 of the length of the upper bushing 301, so that the process gas in the entire area surrounded by the upper bushing 301 can be heated, thereby making it easier to reduce the radial temperature gradient in the radial direction inside the cavity (specifically the cavity bushing). Preferably, in this embodiment, the length of the temperature regulating tube is 330 mm, but the present invention is not limited thereto, and it can be adjusted according to the size of the cavity (specifically the cavity bushing) as needed.

[0057] In this embodiment, the distance between the end of the temperature regulating tube close to one end of the substrate 700 and the substrate 700 is 20 mm to 100 mm, thereby reducing the temperature gradient above the substrate 700 (the axial temperature gradient of the cavity), making the growth conditions of the substrate more stable, thereby improving the uniformity of thickness and doping. Preferably, the distance between the end of the temperature regulating tube close to one end of the substrate 700 and the substrate 700 is 50 mm, but the present invention is not limited thereto.

[0058] In this embodiment, the temperature regulating tube can heat the process gas flowing through the interior thereof, and can also heat the process gas flowing through the outer surface of the temperature regulating tube, so as to reduce the radial temperature gradient of the cavity (specifically the cavity liner).

[0059] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0060] In the description of the present invention, it should be understood that the terms "center", "height", "thickness", "up", "down", "vertical", "horizontal", "top", "bottom", "inside", "outside", "axial", "radial", "circumferential" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0061] In the description of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0062] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0063] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A chemical vapor deposition device, characterized in that: include: Cavity; A gas supply part (201), which is arranged at the top of the cavity and comprises a plurality of gas channels arranged radially, wherein the maximum radial dimension of the gas channels in the outermost circle is a first length; A mounting table (400) is arranged at the bottom of the cavity, opposite to the gas supply part (201), and is used to carry the substrate (700); A bushing, located inside the cavity and arranged around the inner wall of the cavity; A side heater (601), located between the liner and the inner wall of the cavity and above the mounting platform (400), for heating the gas in the cavity; A temperature regulating tube (500) is arranged inside the cavity and located above the mounting platform (400), and the bushing is located between the side heater and the temperature regulating tube. The maximum radial dimension of one end of the temperature regulating tube (500) close to the gas supply part is a second length, and the second length is less than or equal to the first length.

2. The chemical vapor deposition apparatus according to claim 1, characterized in that: The central axis of the temperature regulating cylinder (500) is coaxial with the central axis of the cavity, and a longitudinal annular airflow channel is formed between the outer side wall of the temperature regulating cylinder (500) and the bushing.

3. The chemical vapor deposition apparatus according to claim 1, wherein: The temperature regulating tube (500) is fixedly connected to the cavity via a connecting piece (510), and the connecting piece (510) is located at one end of the temperature regulating tube (500) close to the gas supply part (201).

4. The chemical vapor deposition apparatus according to claim 3, characterized in that: The temperature regulating cylinder and the connecting piece are integrally formed.

5. The chemical vapor deposition apparatus according to claim 1, characterized in that: The temperature regulating cylinder is a cylindrical or polygonal cylindrical structure.

6. The chemical vapor deposition apparatus according to claim 5, characterized in that: The temperature regulating cylinder is a continuous and complete cylindrical structure.

7. The chemical vapor deposition apparatus according to claim 5, characterized in that: A hollow structure is arranged on the temperature regulating cylinder.

8. The chemical vapor deposition apparatus according to claim 7, characterized in that: The hollow structure is evenly or unevenly arranged on the temperature regulating tube.

9. The chemical vapor deposition apparatus according to claim 5, characterized in that: The diameters of the temperature regulating cylinder at different heights are the same or different.

10. The chemical vapor deposition apparatus according to claim 5, characterized in that: The surface roughness of different regions of the temperature regulating cylinder is not completely the same, or the surfaces of different regions are provided with protrusions or depressions that are not completely the same.

11. The chemical vapor deposition apparatus according to claim 10, characterized in that: The inner wall or the outer wall of the temperature regulating cylinder is provided with a spiral airflow guiding fin.

12. The chemical vapor deposition apparatus according to claim 3, characterized in that: The temperature regulating cylinder comprises an upper regulating member and a bottom regulating member stacked up and down, and the cylinder diameters of the upper regulating member and the bottom regulating member are the same or different.

13. The chemical vapor deposition apparatus according to claim 12, wherein: The diameter of the upper adjusting member is smaller than the diameter of the bottom adjusting member.

14. The chemical vapor deposition apparatus according to claim 12, wherein: The upper adjusting member is fixedly connected to the gas supply part, and the maximum size of the top of the upper adjusting member is less than or equal to the first size. The bottom adjusting member is fixedly connected to the cavity through the connecting member.

15. The chemical vapor deposition apparatus according to claim 3, characterized in that: The heat absorption rate of the temperature regulating cylinder (500) is greater than the heat absorption rate of the process gas output by the gas channel.

16. The chemical vapor deposition apparatus according to claim 15, characterized in that: The temperature regulating cylinder (500) and the connecting piece (510) are made of at least one of graphite, silicon carbide, tantalum carbide or high temperature resistant metals such as tungsten, molybdenum or tantalum; when a silicon carbide film is grown on the surface of the substrate, the process gas is a carbon source gas and a silicon source gas; the carbon source includes propane; and the silicon source includes silane.

17. The chemical vapor deposition apparatus according to claim 1, wherein: The gas channel also includes several inner-circle gas channels, and the several inner-circle gas channels are located inside the outermost circle gas channel; the outermost circle gas channel is used to transport purge gas or process gas; and the several inner-circle gas channels are used to transport process gas into the cavity.

18. The temperature regulating tube of the chemical vapor deposition device according to claim 1, characterized in that: The temperature regulating tube (500) extends along the axial direction of the cavity; the temperature regulating tube is used to absorb the heat emitted by the side heater (601) and emit the absorbed heat to the central area of ​​the cavity to heat the process gas located in the central area of ​​the cavity.

19. The chemical vapor deposition apparatus according to claim 1, wherein: The temperature regulating cylinder is fixedly connected to the gas supply part.

20. A temperature regulating device for use in a chemical vapor deposition device as described in any one of claims 1 to 19, wherein the chemical vapor deposition device comprises a chamber, characterized in that: include: The temperature regulating cylinder is arranged inside the cavity and is used to heat the process gas in the central area of ​​the cavity; A connecting piece is used to connect the temperature regulating cylinder with the cavity.

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