Electronic component
By forming a structure with protruding strips on the side surface of the conductive resin layer, the gas movement path is extended, and the problem of peeling off the conductive resin layer during welding and installation is solved, and the stability of electronic components is improved.
Patent Information
- Application Number
- CN202411142260.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-09-15
- Filing Date
- 2024-08-20
- Publication Date
- 2025-03-18
AI Technical Summary
During the welding and installation of electronic components, the volume expansion caused by moisture vaporization may cause stress, resulting in peeling of the conductive resin layer.
A structure of protruding strips is formed on the side surface of the conductive resin layer. The thickness of the protruding strips is increased, and the gas is moved more easily to move and discharge to the end edge of the conductive resin layer, reducing the risk of peeling.
By increasing the gas moving path, peeling of the conductive resin layer is effectively suppressed, and the stability and reliability of electronic components are improved.
Smart Images

Figure CN119650298A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to electronic components. Background Art
[0002] A known electronic component includes an element body and external electrodes disposed on side surfaces of the element body (see, for example, Japanese Patent Application Laid-Open No. 5-144665). The external electrodes include a conductive resin layer. Summary of the invention
[0003] The conductive resin layer includes, for example, resin and conductive particles. The resin tends to absorb moisture. When the electronic component is soldered and mounted on an electronic device, the moisture absorbed by the resin may sometimes vaporize and expand in volume. In this case, stress acts on the conductive resin layer, and the conductive resin layer may peel off. The electronic device includes, for example, a circuit board or an electronic component.
[0004] An object of one embodiment of the present disclosure is to provide an electronic component capable of suppressing peeling of a conductive resin layer.
[0005] An electronic component of one embodiment of the present disclosure includes: a body including a side surface, and an external electrode provided on the side surface and including a conductive resin layer. The conductive resin layer has a protrusion formed on the side surface along at least one direction. The conductive resin layer includes on the side surface: a region having a thickness smaller than that at the protrusion.
[0006] The conductive resin layer, for example, tends to contain continuous bubbles reaching the edge of the conductive resin layer due to the formation process of the conductive resin layer. The continuous bubbles can constitute a migration path for gas generated by moisture. When the gas reaches the edge of the conductive resin layer, it can move outside the conductive resin layer. The structure with a large thickness of the conductive resin layer increases the migration path of the gas compared to the structure with a small thickness of the conductive resin layer.
[0007] In the above embodiment, the conductive resin layer located on the side surface has protrusions formed thereon. The conductive resin layer tends to have a thicker thickness in the region where the protrusions are located. Therefore, in the conductive resin layer, the gas movement path increases in the region where the protrusions are located.
[0008] The protrusion is formed along at least one direction on the side surface. Therefore, in the conductive resin layer located on the side surface, even if the moisture absorbed by the resin is vaporized, the gas generated by the moisture is easy to move in at least one direction in the area where the protrusion is located. In the conductive resin layer, the gas moving in the area where the protrusion is located is easy to move toward the position corresponding to the end edge of the side surface. In the conductive resin layer, the position corresponding to the end edge of the side surface is closer to the end edge of the conductive resin layer than the position corresponding to the center of the side surface. The above method makes it easy for the gas generated by the moisture to move to a position close to the end edge of the conductive resin layer. Therefore, the above method increases the possibility of moving the gas outside the conductive resin layer compared to a structure in which no protrusion is formed on the conductive resin layer.
[0009] As a result, the above-mentioned one aspect can suppress the peeling of the conductive resin layer.
[0010] The conductive resin layer has a resistance greater than that of the electrode layer containing no resin. A structure in which the thickness of the conductive resin layer is large has a greater resistance than a structure in which the thickness of the conductive resin layer is small.
[0011] In the above embodiment, the conductive resin layer includes, on the side surface, a region having a thickness smaller than that of the protrusion. Therefore, the above embodiment suppresses an increase in ESR (equivalent series resistance) of the conductive resin layer.
[0012] In the above-described aspect, the ridge may overlap the center of the side surface when viewed from a direction perpendicular to the side surface.
[0013] The structure in which the protrusion overlaps the center of the side surface makes it easy for the gas generated by moisture to move from the position corresponding to the center of the side surface toward the position corresponding to the edge of the side surface. Therefore, this structure can reliably suppress the peeling of the conductive resin layer.
[0014] In the above embodiment, the side surface may be in a rectangular shape. The at least one direction may include a direction parallel to one side of the side surface in a rectangular shape.
[0015] The structure in which the at least one direction includes a direction parallel to one side of the rectangular side surface makes it easy for the gas generated by moisture to move toward a position corresponding to the edge of the side surface. Therefore, this structure can reliably suppress the peeling of the conductive resin layer.
[0016] In one embodiment of the present invention, the side surface may be in a rectangular shape. The at least one direction may include a direction along a diagonal line of the side surface in a rectangular shape.
[0017] The structure in which at least one direction includes a direction along the diagonal line of the rectangular side surface makes it easy for the gas generated by moisture to move toward a position corresponding to the edge of the side surface. Therefore, this structure can reliably suppress the peeling of the conductive resin layer.
[0018] In the above aspect, the ridges may be formed on the side surface along a plurality of directions including the at least one direction and intersecting with each other.
[0019] The structure in which the protrusions are formed in multiple directions intersecting each other makes it easy for the gas generated by the moisture to move toward multiple positions corresponding to the edge of the side surface. Therefore, this structure can more reliably suppress the peeling of the conductive resin layer.
[0020] In the above embodiment, the side surface may be rectangular. The protrusion may have a length in the at least one direction that is not less than half the length of a diagonal line of the rectangular side surface and not more than the length of the diagonal line.
[0021] The structure in which the protrusion has the above-mentioned length makes it easy for the gas generated by the moisture to move toward the position corresponding to the edge of the side surface along the above-mentioned at least one direction. Therefore, this structure can reliably suppress the peeling of the conductive resin layer.
[0022] In the above aspect, the ridge may be shaped such that, in a cross section of the ridge cut along a plane parallel to the side surface, the width in the at least one direction is greater than the width in a direction orthogonal to the at least one direction.
[0023] The structure in which the protrusion has the above shape makes it easy for the gas generated by the moisture to move toward the position corresponding to the edge of the side surface along the at least one direction. Therefore, this structure can reliably suppress the peeling of the conductive resin layer.
[0024] In the above-described aspect, the protrusion may have an elliptical shape when viewed from a direction perpendicular to the side surface.
[0025] The structure in which the protrusion has the elliptical shape can easily cause the gas generated by the moisture to move toward the position corresponding to the edge of the side surface along the at least one direction. Therefore, this structure can reliably suppress the peeling of the conductive resin layer.
[0026] In one of the above embodiments, the protrusion may be in a shape that includes more areas with gently changing heights in a cross section cut along a plane perpendicular to the side and along at least one of the above directions, compared to a cross section cut along a plane perpendicular to the side and at least one of the above directions.
[0027] The structure in which the protrusion has the above shape makes it easy for the gas generated by the moisture to move toward the position corresponding to the edge of the side surface along the at least one direction. Therefore, this structure can reliably suppress the peeling of the conductive resin layer.
[0028] In one of the above-mentioned embodiments, the protrusion may also be in a shape in which the change in height of the cross section cut by a plane perpendicular to the side and at least one of the above-mentioned directions is steeper than the change in height of the cross section cut by a plane perpendicular to the side and along at least one of the above-mentioned directions.
[0029] In the structure in which the protrusion has the above-mentioned shape, the protrusion has a shape in which the change in height of the cross section cut by a plane perpendicular to the side surface and along the above-mentioned at least one direction is more gradual than the change in height of the cross section cut by a plane perpendicular to the side surface and the above-mentioned at least one direction. Therefore, this structure makes it easy for the gas generated by moisture to move toward the position corresponding to the end edge of the side surface along the above-mentioned at least one direction. This structure can reliably suppress the peeling of the conductive resin layer.
[0030] The present invention will be more fully understood from the following detailed description and accompanying drawings, which are given by way of illustration only and should not be construed as limiting the present invention.
[0031] The further applicability of the present invention will become apparent from the following detailed description. However, it should be understood that various modifications and variations within the spirit and scope of the present invention will become apparent to those skilled in the art based on the detailed description, and therefore, the detailed description and specific examples, while indicating embodiments of the present invention, are given by way of illustration only. BRIEF DESCRIPTION OF THE DRAWINGS
[0032] Figure 1 It is a perspective view showing the electronic component according to the first embodiment.
[0033] Figure 2 It is a diagram showing a cross-sectional structure of the electronic component according to the first embodiment.
[0034] Figure 3 It is a diagram showing a cross-sectional structure of the electronic component according to the first embodiment.
[0035] Figure 4 It is a diagram showing a cross-sectional structure of the electronic component according to the first embodiment.
[0036] Figure 5 is a top view showing the second electrode layer.
[0037] Figure 6 is a top view showing the second electrode layer.
[0038] Figure 7is a top view showing the second electrode layer.
[0039] Figure 8 is a top view showing the second electrode layer.
[0040] Fig. 9 It is a diagram showing an electronic component device according to a second embodiment.
[0041] Fig.10 It is a diagram showing an electronic component device according to a third embodiment. DETAILED DESCRIPTION
[0042] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In the following description, the same reference numerals are given to the same elements or elements having the same functions, and repeated descriptions are omitted.
[0043] First embodiment
[0044] Reference Figure 1 to Figure 5 , the structure of the multilayer capacitor C1 according to the first embodiment will be described. Figure 1 It is a perspective view of the multilayer capacitor according to the first embodiment. Figure 2 to Figure 4 It is a diagram showing a cross-sectional structure of the multilayer capacitor according to the first embodiment. Figure 5 2 is a plan view showing the second electrode layer. In the first embodiment, the electronic component is, for example, a multilayer capacitor C1. Hereinafter, the structure of the multilayer capacitor C1 according to the first embodiment will be described.
[0045] like Figure 1 As shown, the multilayer capacitor C1 includes a rectangular parallelepiped element body 3 and a plurality of external electrodes 5. The plurality of external electrodes 5 are arranged on the element body 3. The plurality of external electrodes 5 are separated from each other. The multilayer capacitor C1 includes, for example, a pair of external electrodes 5. The rectangular parallelepiped shape includes a rectangular parallelepiped shape with chamfered corners and edges, or a rectangular parallelepiped shape with rounded corners and edges.
[0046] The element body 3 includes: a pair of mutually opposing side surfaces 3a, a pair of mutually opposing side surfaces 3c, and a pair of mutually opposing side surfaces 3e. Each of the side surfaces 3a, 3b, 3c, and 3e is rectangular. The rectangular shape includes, for example, a shape in which each corner is chamfered or a shape in which each corner is rounded.
[0047] A pair of side faces 3a are opposite to each other in direction D1. A pair of side faces 3c are opposite to each other in direction D2. Side faces 3e are opposite to each other in direction D3. Direction D1 intersects direction D2 and direction D3. Direction D2 intersects direction D3. For example, direction D1, direction D2, and direction D3 are orthogonal to each other. Side face 3a is orthogonal to direction D1. Side face 3c is orthogonal to direction D2. Side face 3e is orthogonal to direction D3.
[0048] The multilayer capacitor C1 is mounted on an electronic device, for example, by soldering. The electronic device includes, for example, a circuit board or an electronic component. In the multilayer capacitor C1, one of the four side surfaces 3a and 3c faces the electronic device. One of the four side surfaces 3a and 3c is configured to constitute a mounting surface. One of the four side surfaces 3a and 3c is a mounting surface.
[0049] The side surface 3e extends in the direction D1 so as to connect the pair of side surfaces 3a. The side surface 3e extends in the direction D2 so as to connect the pair of side surfaces 3c. The side surface 3a extends in the direction D3 so as to connect the pair of side surfaces 3e. The side surface 3c extends in the direction D3 so as to connect the pair of side surfaces 3e.
[0050] The length of the element body 3 in the direction D1 is, for example, 0.1 to 6.3 mm. The length of the element body 3 in the direction D2 is, for example, 0.1 to 3.2 mm. The length of the element body 3 in the direction D3 is, for example, 0.2 to 7.5 mm. In the element body 3, for example, the direction D3 is the long side direction. The length of the element body 3 in the direction D1 is the height of the element body 3. The length of the element body 3 in the direction D2 is the width of the element body 3. The length of the element body 3 in the direction D3 is the length of the element body 3.
[0051] The element body 3 is composed of a plurality of dielectric layers stacked in the direction D1. The element body 3 includes a plurality of stacked dielectric layers. In the element body 3, the stacking direction of the plurality of dielectric layers is consistent with the direction D1. Each dielectric layer is composed of, for example, a sintered body of a ceramic green sheet containing a dielectric material. The dielectric material includes, for example, a dielectric ceramic. The dielectric ceramic includes, for example, a dielectric ceramic of the BaTiO3 system, the Ba(Ti, Zr)O3 system, or the (Ba, Ca)TiO3 system. In the actual element body 3, each dielectric layer is integrated to the extent that the boundaries between the dielectric layers cannot be identified. In the element body 3, the stacking direction of the plurality of dielectric layers may also be consistent with the direction D2.
[0052] like Figures 1 to 4 As shown, a pair of external electrodes 5 are arranged at both ends of the element body 3 in the direction D3. Each of the pair of external electrodes 5 is arranged on the corresponding side surface 3e of the pair of side surfaces 3e. For example, each of the pair of external electrodes 5 is arranged on the side surface 3e, and the side surfaces 3a and 3c. For example, each of the pair of external electrodes 5 may also be arranged on the edge between the side surface 3e and the side surface 3a, the edge between the side surface 3e and the side surface 3c, and the edge between the side surface 3a and the side surface 3c.
[0053] The external electrode 5 includes a plurality of electrode portions 5a, 5c, and 5e. The electrode portion 5a is located on the side surface 3a. The electrode portion 5c is located on the side surface 3c. The electrode portion 5e is located on the side surface 3e. The external electrode 5 may also include: an electrode portion arranged on the edge portion between the side surface 3e and the side surface 3a, an electrode portion arranged on the edge portion between the side surface 3e and the side surface 3c, and an electrode portion arranged on the edge portion between the side surface 3a and the side surface 3c.
[0054] The external electrode 5 is formed on five surfaces, namely, a pair of side surfaces 3a, a side surface 3e, and a pair of side surfaces 3c. The electrode portions 5a, 5c, and 5e adjacent to each other are connected to each other and electrically connected to each other. The external electrode 5 includes a first electrode layer E1, a second electrode layer E2, and a third electrode layer E3. For example, each electrode portion 5a, 5c, and 5e includes a first electrode layer E1, a second electrode layer E2, and a third electrode layer E3. The third electrode layer E3 constitutes the outermost layer of the external electrode 5.
[0055] The first electrode layer E1 of the electrode portion 5a is arranged on the side surface 3a. The first electrode layer E1 of the electrode portion 5a is formed in a manner covering a portion of the side surface 3a. The first electrode layer E1 of the electrode portion 5a is in contact with a portion of the side surface 3a. For example, a portion of the side surface 3a is located near the corresponding side surface 3e. The first electrode layer E1 of the electrode portion 5a is arranged on the ridge between the side surface 3a and the side surface 3e. The first electrode layer E1 may not be arranged on the side surface 3a.
[0056] The second electrode layer E2 of the electrode portion 5a is disposed on the side surface 3a. The second electrode layer E2 of the electrode portion 5a is in contact with a portion of the side surface 3a. The above-mentioned portion of the side surface 3a is, for example, a portion of the side surface 3a close to the corresponding side surface 3e. The second electrode layer E2 of the electrode portion 5a is formed in a manner covering the above-mentioned portion of the side surface 3a. The second electrode layer E2 of the electrode portion 5a directly covers the above-mentioned portion of the side surface 3a.
[0057] The third electrode layer E3 of the electrode portion 5a is arranged on the second electrode layer E2. In the electrode portion 5a, the third electrode layer E3 covers the entire second electrode layer E2. In the electrode portion 5a, the third electrode layer E3 is in contact with the entire second electrode layer E2. In the electrode portion 5a, the third electrode layer E3 is directly in contact with the second electrode layer E2. Even if the first electrode layer E1 is a structure arranged on the side 3a, in the electrode portion 5a, the third electrode layer E3 is not directly in contact with the first electrode layer E1. The electrode portion 5a has on the side 3a: a double-layer structure including the second electrode layer E2 and the third electrode layer E3. In the structure in which the first electrode layer E1 of the electrode portion 5a is arranged on the side 3a, the electrode portion 5a has a three-layer structure on the side 3a.
[0058] The first electrode layer E1 of the electrode portion 5c is arranged on the side surface 3c. The first electrode layer E1 of the electrode portion 5c is formed in a manner covering a portion of the side surface 3c. The first electrode layer E1 of the electrode portion 5c is in contact with a portion of the side surface 3c. For example, a portion of the side surface 3c is located near the corresponding side surface 3e. The first electrode layer E1 of the electrode portion 5c is arranged on the ridge between the side surface 3c and the side surface 3e. The first electrode layer E1 may not be arranged on the side surface 3c.
[0059] The second electrode layer E2 of the electrode portion 5c is arranged on the side surface 3c. The second electrode layer E2 of the electrode portion 5c is in contact with a portion of the side surface 3c. The above-mentioned portion of the side surface 3c is, for example, a portion of the side surface 3c close to the corresponding side surface 3e. The second electrode layer E2 of the electrode portion 5c is formed in a manner covering the above-mentioned portion of the side surface 3c. The second electrode layer E2 of the electrode portion 5c directly covers the above-mentioned portion of the side surface 3c.
[0060] The third electrode layer E3 of the electrode portion 5c is arranged on the second electrode layer E2. In the electrode portion 5c, the third electrode layer E3 covers the entirety of the second electrode layer E2. In the electrode portion 5c, the third electrode layer E3 is in contact with the entirety of the second electrode layer E2. In the electrode portion 5c, the third electrode layer E3 is in direct contact with the second electrode layer E2. Even if the first electrode layer E1 is a structure arranged on the side 3c, in the electrode portion 5c, the third electrode layer E3 is not in direct contact with the first electrode layer E1. The electrode portion 5c has on the side 3c: a double-layer structure including the second electrode layer E2 and the third electrode layer E3. In the structure in which the first electrode layer E1 of the electrode portion 5c is arranged on the side 3c, the electrode portion 5c has a three-layer structure on the side 3c.
[0061] The first electrode layer E1 of the electrode portion 5e is disposed on the side surface 3e. The entire side surface 3e is covered by the first electrode layer E1. The first electrode layer E1 of the electrode portion 5e is in contact with the entire side surface 3e.
[0062] The second electrode layer E2 of the electrode portion 5e is arranged on the first electrode layer E1. In the electrode portion 5e, the second electrode layer E2 is in contact with the entire first electrode layer E1. The second electrode layer E2 of the electrode portion 5e is formed in a manner that covers the entire side surface 3e. The second electrode layer E2 of the electrode portion 5e indirectly covers the entire side surface 3e in a manner that the first electrode layer E1 is located between the second electrode layer E2 and the side surface 3e. The second electrode layer E2 of the electrode portion 5e directly covers the entire first electrode layer E1.
[0063] In the electrode portion 5e, the second electrode layer E2 may also cover only a portion of the side surface 3e. The portion of the side surface 3e covered by the second electrode layer E2 is, for example, located near the side surface 3a. In this case, in the electrode portion 5e, the second electrode layer E2 indirectly covers only a portion of the side surface 3e in a manner such that the first electrode layer E1 is located between the second electrode layer E2 and the side surface 3e. In the electrode portion 5e, the second electrode layer E2 directly covers only a portion of the first electrode layer E1. That is, the electrode portion 5e includes: an area where the first electrode layer E1 is exposed from the second electrode layer E2, and an area where the first electrode layer E1 is covered by the second electrode layer E2.
[0064] The third electrode layer E3 of the electrode portion 5e is arranged on the second electrode layer E2. In the electrode portion 5e, the third electrode layer E3 covers the entire second electrode layer E2. In the electrode portion 5e, the third electrode layer E3 is in contact with the entire second electrode layer E2. In the electrode portion 5e, the third electrode layer E3 is in direct contact with the second electrode layer E2. In the electrode portion 5e, the third electrode layer E3 is not in direct contact with the first electrode layer E1.
[0065] In the second electrode layer E2, a protrusion R1 is formed on the side 3e. The second electrode layer E2 includes: an area E2a, and an area E2b other than the area E2a. The protrusion R1 is formed along the direction D2. The protrusion R1 is formed along a direction parallel to the side 3a. When viewed from the direction D3, the protrusion R1 overlaps with the center 3e1 of the side 3e. When viewed from the direction D3, the protrusion R1 is roughly elliptical. The roughly elliptical shape presented by the protrusion R1 includes a roughly elliptical shape or a roughly rounded rectangular shape. The protrusion R1 can also be roughly rectangular. For example, the long side direction of the roughly elliptical shape of the protrusion R1 is the direction D2. The protrusion R1 can also be formed along the direction D1. In this case, the protrusion R1 is formed along a direction parallel to the side 3c.
[0066] like Figure 5 As shown, the ridge R1 has a length L2 in the direction D2 that is not less than half the length L1 of the diagonal line DL1 of the side surface 3e and not more than the length L1 of the diagonal line DL1. The length L1 of the diagonal line DL1 is defined, for example, as follows.
[0067] In the element body 3 including the edge of the side surface 3e in a plane including the side surface 3e, the length L1 of the diagonal line DL1 is defined on the side surface 3e. In the element body 3 not including the edge of the side surface 3e in a plane including the side surface 3e, the length L1 of the diagonal line DL1 is defined in a plane including the side surface 3e and orthogonal to four planes including the four side surfaces 3a and 3c, and in an area defined by the four planes.
[0068] In the protrusion R1, the increase rate of the thickness of the second electrode layer E2 is greater in the central area including the center 3e1 than in the peripheral areas outside the central area including the center 3e1 of the side 3e, so that the second electrode layer E2 protrudes toward the outside of the element body 3. In the second electrode layer E2, the above increase rates are different in the area E2a and the area E2b. The above increase rate in the area E2b is greater than the above increase rate in the area E2a. Due to the difference in the increase rate, the protrusion R1 is formed in the second electrode layer E2. The protrusion R1 includes: a point where the increase rate of the thickness of the second electrode layer E2 changes, and a protruding area between the center of the second electrode layer E2. The outer edge of the protrusion R1 is the position of the change point of the increase rate of the thickness of the second electrode layer E2. That is, the area E2a includes the protrusion R1. As Figure 3 and 4 As shown, region E2b has a thickness T2 that is smaller than the thickness T1 of region E2a. Region E2b overlaps with the side surface 3e except for the region overlapping with region E2a. The third electrode layer E3 has an outer shape consistent with the outer shape of the second electrode layer E2, and the third electrode layer E3 located on the protrusion R1 protrudes toward the outside of the element body 3.
[0069] The ridge R1 has a shape in which the width W1 is greater than the width W2. The width W1 is the width of the ridge R1 in the direction D2 in the cross section of the ridge R1 cut by the plane PL1. The width W2 is the width of the ridge R1 in the direction D1 in the cross section of the ridge R1 cut by the plane PL1. For example, the maximum value of the width W1 corresponds to the length L2. The plane PL1 includes: a plane parallel to the plane including the side surface 3e and separated from the side surface 3e by a predetermined distance.
[0070] The width W1 and the width W2 can be obtained, for example, as follows.
[0071] A cross-sectional photograph of the multilayer capacitor C1 including the second electrode layer E2 is obtained. The cross-sectional photograph is, for example, a photograph of a cross section of the multilayer capacitor C1 when the plane PL1 parallel to the central region including the center 3e1 of the side surface 3e is cut. The obtained cross-sectional photograph is image-processed using software. Based on the result of the image processing, the boundary of the second electrode layer E2 is determined, and the width W1 and the width W2 on the obtained cross-sectional photograph are calculated. The width W1 and the width W2 may also be, for example, the average value of multiple measurement results.
[0072] like Figure 3 and Figure 4 As shown, the ridge R1 has a shape including more regions with gentle height changes in a cross section cut along a plane perpendicular to the side surface 3e and along the direction D2 than in a cross section cut along a plane perpendicular to the side surface 3e and the direction D2. Figure 3 A cross section cut along a plane perpendicular to the side surface 3 e and the direction D2 is shown. Figure 4The cross section cut by a plane perpendicular to the side surface 3e and along the direction D2 is shown. The ridge R1 has a shape in which the change in height in the cross section cut by a plane perpendicular to the side surface 3e and the direction D2 is steeper than the change in height in the cross section cut by a plane perpendicular to the side surface 3e and along the direction D2.
[0073] The first electrode layer E1 is formed by sintering a conductive paste applied to the surface of the element body 3. The first electrode layer E1 is formed in a manner covering one side surface 3e. The first electrode layer E1 is formed by sintering the metal component contained in the conductive paste. The metal component contained in the conductive paste includes, for example, metal powder. The first electrode layer E1 is a sintered metal layer. The first electrode layer E1 is a sintered metal layer formed on the element body 3. For example, the first electrode layer E1 includes: a sintered metal layer containing Cu. The first electrode layer E1 can also be a sintered metal layer containing Ni. The first electrode layer E1 contains a base metal. The conductive paste contains: for example, a powder containing Cu or Ni, a glass component, an organic binder, and an organic solvent. The first electrode layer E1 included in each electrode portion 5a, 5c, 5e is formed integrally.
[0074] The second electrode layer E2 is formed by curing the conductive resin paste applied to the first electrode layer E1. The second electrode layer E2 is formed over the first electrode layer E1 and the element body 3. The first electrode layer E1 is a base metal layer for forming the second electrode layer E2. The second electrode layer E2 includes a conductive resin layer covering the first electrode layer E1. The conductive resin paste includes, for example, a curing resin, a conductive material, and an organic solvent. The curing resin includes, for example, a thermosetting resin. The conductive material includes, for example, metal powder. The metal powder includes, for example, Ag powder or Cu powder. The thermosetting resin includes, for example, phenolic resin, acrylic resin, silicone resin, epoxy resin, or polyimide resin. The second electrode layer E2 included in each electrode portion 5a, 5c, 5e is formed integrally.
[0075] Application of the conductive resin paste includes, for example, the following process.
[0076] One process includes: forming a layer of a conductive resin paste having a predetermined thickness on the element body 3; and applying the conductive resin paste to a region where the projection R1 is to be formed in the layer of the predetermined thickness located on the side surface 3 e.
[0077] Another process includes: forming a layer of a conductive resin paste having a predetermined thickness on the element body 3; and removing a portion of the conductive resin paste in an area other than an area where the ridge R1 is to be formed in the layer of the predetermined thickness located on the side surface 3e.
[0078] Through any process, the protrusion R1 can be formed on the second electrode layer E2 on the side surface 3e.
[0079] As described above, the conductive resin paste is a resin composition containing a curing resin and an organic solvent. In the resin composition, the organic solvent is vaporized. Gas is generated in the conductive resin paste due to the vaporization of the organic solvent. The gas generated by the vaporization of the organic solvent directly reaches the surface of the conductive resin paste from all parts of the conductive resin paste where the organic solvent exists, and is separated from the conductive resin paste. In the conductive resin paste, voids are formed in all the above-mentioned parts of the conductive resin paste as channels for the gas generated by the vaporization of the organic solvent, and continuous bubbles connecting these voids are formed.
[0080] The gas generated by the vaporization of the organic solvent is released from the surface of the conductive resin paste before curing to the outside of the conductive resin paste. An opening continuous with the continuous bubbles is formed on the surface of the conductive resin paste. The continuous bubbles are formed so as to connect the above-mentioned opening formed in the conductive resin paste and a plurality of gaps formed by the vaporization of the organic solvent in all the parts where the organic solvent exists. The above-mentioned opening formed on the surface of the second electrode layer E2 is also formed correspondingly in all the parts where the organic solvent exists. Therefore, the continuous bubbles can open at the edge of the second electrode layer E2.
[0081] The formation of voids and continuous bubbles in the second electrode layer E2 can be controlled, for example, by the type and content ratio of the organic solvent used and the curing conditions of the conductive resin paste. The curing conditions of the conductive resin paste include, for example, the temperature and pressure of the atmospheric gas. The formation of voids and continuous bubbles in the conductive resin paste is a matter generally known to those skilled in the art, and further detailed description is omitted.
[0082] The third electrode layer E3 is formed on the second electrode layer E2 by a plating method. The third electrode layer E3 may also have a multilayer structure. In this case, the third electrode layer E3 includes, for example, a Ni-plated layer and a solder-plated layer. The Ni-plated layer is formed on the second electrode layer E2. The solder-plated layer is formed on the Ni-plated layer. The solder-plated layer covers the Ni-plated layer. The Ni-plated layer has excellent resistance to solder corrosion compared to the metal contained in the second electrode layer E2. The third electrode layer E3 may also have a Sn-plated layer, a Cu-plated layer, or an Au-plated layer instead of the Ni-plated layer. The solder-plated layer includes, for example, a Sn-plated layer, a Sn-Ag alloy-plated layer, a Sn-Bi alloy-plated layer, or a Sn-Cu alloy-plated layer. The third electrode layer E3 possessed by each electrode portion 5a, 5c, and 5e is formed integrally.
[0083] The third electrode layer E3 is formed by a so-called electrolytic plating method. When the plating layer is formed by the electrolytic plating method, the metal constituting the plating layer is precipitated on the conductive material as the base, for example, and grows into a plated film. When the plating layer is formed on the second electrode layer E2, the metal constituting the plating layer is precipitated on the conductive material exposed on the surface of the second electrode layer E2, for example, among the conductive materials contained in the second electrode layer E2, and grows into a plated film. The plated film grows on the surface of the second electrode layer E2 along the surface, starting from the conductive material exposed on the surface of the second electrode layer E2.
[0084] The element body 3 is not easy to have conductivity. Therefore, the plating film, that is, the third electrode layer E3, is not in close contact with the element body 3. There is a gap between the third electrode layer E3 and the element body 3. The gap between the third electrode layer E3 and the element body 3 is connected to the opening formed in the second electrode layer E2, which is located at the end edge and the vicinity of the end edge of the second electrode layer E2. The gap between the third electrode layer E3 and the element body 3 is connected to the continuous bubbles formed in the second electrode layer E2.
[0085] The formation of the plating layer can be controlled by the temperature and current value during plating, and the plating time. The formation of the plating layer is a matter generally known to those skilled in the art, and further detailed description is omitted.
[0086] like Figure 2 As shown, the multilayer capacitor C1 includes a plurality of internal electrodes 7. The plurality of internal electrodes 7 are internal conductors disposed in the element body 3. The plurality of internal electrodes 7 are disposed at different positions (layers) in the direction D1. The plurality of internal electrodes 7 are disposed alternately in the element body 3 so as to face each other with a gap in the direction D1.
[0087] The external electrode 5 is electrically connected to a corresponding internal electrode 7 among the plurality of internal electrodes 7. The internal electrode 7 includes an end exposed at a corresponding side surface 3e among the pair of side surfaces 3e.
[0088] The electrode portion 5e completely covers the end of the internal electrode 7 exposed on the side surface 3e where the electrode portion 5e is arranged. The electrode portion 5e is directly connected to the corresponding internal electrode 7. In the electrode portion 5e, the first electrode layer E1 is formed on the side surface 3e so as to be connected to the end of the corresponding internal electrode 7.
[0089] The plurality of internal electrodes 7 include electrodes of different polarities. The internal electrodes 7 of different polarities are arranged alternately. The internal electrodes 7 of different polarities are arranged at different positions (layers) in the direction D1. The plurality of internal electrodes 7 each include an end exposed at the corresponding side surface 3e.
[0090] The internal electrode 7 includes a conductive material generally used as an internal electrode of a laminated electronic component. The conductive material includes, for example, a base metal. The conductive material includes, for example, Ni or Cu. The internal electrode 7 is formed as a sintered body of a conductive paste including the conductive material. For example, the internal electrode 7 includes Ni.
[0091] In the multilayer capacitor C1, there is a tendency for continuous bubbles to be formed in the second electrode layer E2, for example, due to the formation process of the second electrode layer E2 as described above. The continuous bubbles can constitute a migration path for the gas generated by moisture. When the gas reaches the edge of the second electrode layer E2, it can move outside the second electrode layer E2. The structure in which the thickness of the second electrode layer E2 is large increases the migration path of the gas compared to the structure in which the thickness of the second electrode layer E2 is small.
[0092] In the multilayer capacitor C1, the protrusion R1 is formed on the second electrode layer E2 included in the electrode portion 5e. The second electrode layer E2 of the electrode portion 5e tends to have an increased thickness in the region E2a. Therefore, in the second electrode layer E2 of the electrode portion 5e, the movement path of the gas generated by the moisture absorbed by the resin increases in the region E2a.
[0093] The protrusion R1 is formed along at least one direction on the side 3e. Therefore, in the second electrode layer E2 of the electrode portion 5e, even if the moisture absorbed by the resin is vaporized, the gas generated by the moisture is easy to move in at least one direction in the region E2a. In the second electrode layer E2, the gas moving in the region E2a is easy to move toward the position corresponding to the end edge of the side 3e. In the second electrode layer E2, the position corresponding to the end edge of the side 3e is closer to the end edge of the second electrode layer E2 than the position corresponding to the center of the side 3e. The stacked capacitor C1 makes it easy for the gas generated by the moisture to move to a position close to the end edge of the second electrode layer E2. Therefore, the stacked capacitor C1 increases the possibility of moving the gas outside the second electrode layer E2 compared to a structure in which the protrusion R1 is not formed on the second electrode layer E2.
[0094] As a result, the multilayer capacitor C1 can suppress the peeling of the second electrode layer E2.
[0095] The resin contained in the second electrode layer E2 can form a path for water to move. When water reaches the edge of the second electrode layer E2, it can be vaporized and move to the outside of the second electrode layer E2. The structure with a large thickness of the second electrode layer E2 increases the path for water to move compared to the structure with a small thickness of the second electrode layer E2.
[0096] As described above, the second electrode layer E2 of the electrode portion 5e tends to have a greater thickness in the region E2a. Therefore, the second electrode layer E2 of the electrode portion 5e has more migration paths for water in the region E2a.
[0097] The moisture contained in the resin contained in the second electrode layer E2 of the electrode portion 5e is easy to move in at least one direction in the region E2a. In the second electrode layer E2, the moisture moving in the region E2a is easy to move toward the position corresponding to the edge of the side surface 3e. The stacked capacitor C1 is easy to move the moisture to the position close to the edge of the second electrode layer E2. Therefore, the stacked capacitor C1 has a higher possibility of moving the moisture outside the second electrode layer E2 than the structure in which the protrusion R1 is not formed in the second electrode layer E2.
[0098] According to these results, the multilayer capacitor C1 can also suppress the peeling of the second electrode layer E2.
[0099] Gas generated from moisture in the second electrode layer E2 can eventually be discharged from the gap between the element body 3 and the third electrode layer E3 to the outside of the external electrode 5 .
[0100] The second electrode layer E2 has a resistance greater than that of the electrode layer not containing resin. A structure in which the thickness of the second electrode layer E2 is large has a larger resistance than a structure in which the thickness of the second electrode layer E2 is small.
[0101] In the multilayer capacitor C1, the second electrode layer E2 includes a region E2b having a thickness smaller than that of the ridge R1 on the side surface 3e. Therefore, the multilayer capacitor C1 suppresses an increase in ESR (equivalent series resistance) of the second electrode layer E2.
[0102] In the multilayer capacitor C1, the protrusion R1 overlaps the center 3e1 of the side surface 3e when viewed from a direction perpendicular to the side surface 3e. Therefore, the multilayer capacitor C1 easily allows the gas generated by moisture to move from the position corresponding to the center 3e1 of the side surface 3e toward the position corresponding to the edge of the side surface 3e. As a result, the multilayer capacitor C1 can reliably suppress the peeling of the second electrode layer E2.
[0103] In the multilayer capacitor C1, the side surface 3e is rectangular. The ridge R1 is formed on the side surface 3e in a direction parallel to one side of the side surface 3e. The at least one direction includes: a direction parallel to one side of the rectangular side surface 3e. The at least one direction includes a direction D2. Therefore, the multilayer capacitor C1 easily allows the gas generated by moisture to move toward a position corresponding to the edge of the side surface 3e. As a result, the multilayer capacitor C1 can reliably suppress the peeling of the second electrode layer E2.
[0104] In the multilayer capacitor C1, the side surface 3e is rectangular. The protrusion R1 has a length L2 in the direction parallel to one side of the side surface 3e that is greater than half the length L1 of the diagonal line DL1 of the rectangular side surface 3e and less than the length L1 of the diagonal line DL1. Therefore, the multilayer capacitor C1 easily allows the gas generated by moisture to move toward a position corresponding to the end edge of the side surface 3e along the direction parallel to one side of the side surface 3e. As a result, the multilayer capacitor C1 can reliably suppress the peeling of the second electrode layer E2.
[0105] In the multilayer capacitor C1, the ridge R1 has a shape in which the width W1 is greater than the width W2. Therefore, in the multilayer capacitor C1, it is easy for the gas generated by the moisture to move toward the position corresponding to the edge of the side surface 3e along the above-mentioned direction parallel to one side of the side surface 3e. As a result, the multilayer capacitor C1 can reliably suppress the peeling of the second electrode layer E2.
[0106] In the multilayer capacitor C1, the ridge R1 is substantially elliptical when viewed from a direction perpendicular to the side surface 3e. Therefore, the multilayer capacitor C1 easily allows the gas generated by moisture to move along the above direction parallel to one side of the side surface 3e toward a position corresponding to the edge of the side surface 3e. As a result, the multilayer capacitor C1 can reliably suppress the peeling of the second electrode layer E2.
[0107] In the multilayer capacitor C1, the ridge R1 has a shape that includes more regions with gentle height changes in a cross section cut along a plane perpendicular to the side 3e and along the direction parallel to one side of the side 3e than in a cross section cut along a plane perpendicular to the side 3e and the direction parallel to one side of the side 3e. Therefore, the multilayer capacitor C1 easily allows the gas generated by moisture to move along the direction parallel to one side of the side 3e toward a position corresponding to the end edge of the side 3c. As a result, the multilayer capacitor C1 can reliably suppress the peeling of the second electrode layer E2.
[0108] In the multilayer capacitor C1, the ridge R1 may also present a shape in which the height change on the cross section cut by a plane orthogonal to the side surface 3e and the above-mentioned direction parallel to one side of the side surface 3e is steeper than the height change on the cross section cut by a plane orthogonal to the side surface 3e and along the above-mentioned direction parallel to one side of the side surface 3e. Therefore, in the multilayer capacitor C1, the ridge R1 presents a shape in which the height change on the cross section cut by a plane orthogonal to the side surface 3e and along the above-mentioned direction parallel to one side of the side surface 3e is gentler than the height change on the cross section cut by a plane orthogonal to the side surface 3e and along the above-mentioned direction parallel to one side of the side surface 3e. The multilayer capacitor C1 easily allows the gas generated by moisture to move along the above-mentioned direction parallel to one side of the side surface 3e toward the position corresponding to the end edge of the side surface 3e. As a result, the multilayer capacitor C1 can reliably suppress the peeling of the second electrode layer E2.
[0109] Reference Figure 6 , a multilayer capacitor C1 according to a first modification of the first embodiment will be described. Figure 6 2 is a top view showing the second electrode layer. The multilayer capacitor C1 of the first modification is similar to or the same as the multilayer capacitor C1 of the first embodiment described above, but the multilayer capacitor C1 of the first modification is different from the multilayer capacitor C1 of the first embodiment in terms of the structure of the external electrode 5. The following mainly describes the differences between the first embodiment and the first modification.
[0110] The multilayer capacitor C1 according to the first modification also includes a pair of external electrodes 5 .
[0111] The second electrode layer E2 has a protrusion R1 formed on the side surface 3e. The protrusion R1 is formed along the diagonal line DL1. When viewed from the direction D3, the protrusion R1 is substantially elliptical. For example, the long side direction of the substantially elliptical shape of the protrusion R1 is the extending direction of the diagonal line DL1. The protrusion R1 may also be formed along the diagonal line DL1. Figure 6 The extending directions of the diagonal lines DL1 shown are formed in such a way as to intersect with each other.
[0112] In the first modification, the ridge R1 has a length L2 that is not less than half the length L1 of the diagonal line DL1 and not more than the length L1 of the diagonal line DL1 in the extending direction of the diagonal line DL1 .
[0113] In the multilayer capacitor C1 of the first variant, the side surface 3e is rectangular. The at least one direction includes a direction along the diagonal line DL1 of the rectangular side surface 3e. Therefore, the multilayer capacitor C1 of the first variant easily moves the gas generated by moisture toward the position corresponding to the edge of the side surface 3e. As a result, the multilayer capacitor C1 of the first variant can reliably suppress the peeling of the second electrode layer E2.
[0114] Reference Figure 7 , a multilayer capacitor C1 according to a second modification of the first embodiment will be described. Figure 7 2 is a top view showing the second electrode layer. The multilayer capacitor C1 of the second modification is similar to or the same as the multilayer capacitor C1 of the first embodiment, but the multilayer capacitor C1 of the second modification is different from the multilayer capacitor C1 of the first embodiment in terms of the structure of the external electrode 5. The following mainly describes the differences between the first embodiment and the second modification.
[0115] The multilayer capacitor C1 according to the second modification also includes a pair of external electrodes 5 .
[0116] In the second electrode layer E2, a protrusion R1 is formed on the side surface 3e. The protrusion R1 is formed along the direction D1 and the direction D2. The protrusion R1 includes: a protrusion R1a and a protrusion R1b. The protrusion R1a is formed along the direction D2, and the protrusion R1b is formed along the direction D1. The protrusion R1a and the protrusion R1b intersect each other. For example, the protrusion R1a and the protrusion R1b intersect each other at approximately 90 degrees. When viewed from the direction D3, the protrusion R1a and the protrusion R1b are respectively elliptical. The long side direction of the elliptical shape of the protrusion R1a is the direction D2. The long side direction of the elliptical shape of the protrusion R1b is the direction D1.
[0117] The projection R1a has a length L2a in the direction D2 that is not less than half the length L1 of the diagonal line DL1 and not more than the length L1 of the diagonal line DL1. The projection R1b has a length L2b in the direction D1 that is not less than half the length L1 of the diagonal line DL1 and not more than the length L1 of the diagonal line DL1.
[0118] In the multilayer capacitor C1 of the second modification, the ridges R1 are formed on the side surface 3e along multiple directions including at least one of the above directions and intersecting with each other. Therefore, the multilayer capacitor C1 of the second modification can easily move the gas generated by moisture toward multiple positions corresponding to the edge of the side surface 3e. As a result, the multilayer capacitor C1 of the second modification can more reliably suppress the peeling of the second electrode layer E2.
[0119] Reference Figure 8 , a multilayer capacitor C1 according to a third modified example of the first embodiment will be described. Figure 8 is a top view showing the second electrode layer. The multilayer capacitor C1 of the third modification is similar to or the same as the multilayer capacitor C1 of the first embodiment described above, but the multilayer capacitor C1 of the third modification is different from the multilayer capacitor C1 of the first embodiment in terms of the structure of the external electrode 5. The following mainly describes the differences between the first embodiment and the third modification.
[0120] The multilayer capacitor C1 according to the second modification also includes a pair of external electrodes 5 .
[0121] In the second electrode layer E2, a protrusion R1 is formed on the side surface 3e. The protrusion R1 is formed along the extension direction of the diagonal line DL1 and the direction intersecting the extension direction of the diagonal line DL1. The protrusion R1 includes a protrusion R1a and a protrusion R1b. The protrusion R1a is formed along the extension direction of the diagonal line DL1, and the protrusion R1b is formed along the extension direction of the diagonal line DL1. For example, the protrusion R1a and the protrusion R1b intersect each other at approximately 90°. That is, the protrusion R1b can also be formed along the extension direction of another diagonal line. When viewed from the direction D3, the protrusion R1a and the protrusion R1b are respectively approximately elliptical in shape. The long side direction of the approximately elliptical shape of the protrusion R1a is the extension direction of the diagonal line DL1. The long side direction of the approximately elliptical shape of the protrusion R1b is the direction intersecting the extension direction of the diagonal line DL1.
[0122] The ridge R1a has a length L2a in the extending direction of the diagonal line DL1. The ridge R1b has a length L2b in the direction intersecting the extending direction of the diagonal line DL1. The lengths L2a and L2b are each greater than or equal to half the length L1 of the diagonal line DL1 and less than or equal to the length L1 of the diagonal line DL1.
[0123] Second embodiment
[0124] Reference Fig. 9 , the structure of the electronic component device ECD of the second embodiment is described. Fig. 9 It is a diagram showing an electronic component device according to a second embodiment.
[0125] In the second embodiment, an electronic component device ECD includes: the multilayer capacitor C1 of the first embodiment and an electronic device ED. The multilayer capacitor C1 is mounted on the electronic device ED. For example, the multilayer capacitor C1 is mounted on the electronic device ED by soldering. The electronic device ED includes, for example, a circuit board or an electronic component.
[0126] The electronic device ED includes a main surface EDa. The electronic device ED includes, for example, a pair of pad electrodes PE arranged on the main surface EDa. The pair of pad electrodes PE are electrically connected to the stacked capacitor C1. The pair of pad electrodes PE are respectively electrically connected to corresponding external electrodes 5 in a pair of external electrodes 5. The pair of pad electrodes PE are separated from each other. The stacked capacitor C1 is arranged on the electronic device ED, for example, in such a manner that the main surface EDa and the side surface 3c face each other. That is, for example, the side surface 3c is arranged to constitute a mounting surface. Fig. 9 In FIG. 1 , only one pad electrode PE of a pair of pad electrodes PE is shown.
[0127] When the multilayer capacitor C1 is mounted by soldering, the molten solder wets the external electrode 5. The molten solder wets the third electrode layer E3 constituting the outermost layer of the external electrode 5.
[0128] The protrusion R1 is formed along the direction D2. The third electrode layer E3 located on the protrusion R1 includes: a region protruding toward the outside of the element body 3 and along the direction D2. The molten solder wets the third electrode layer E3 along the direction D2 in which the protrusion R1 is formed. The molten solder easily wets the third electrode layer E3 located on the region E2b, and it is difficult to wet the third electrode layer E3 located on the protrusion R1. The height of the molten solder wetting the third electrode layer E3 located on the region E2b in the direction D2 is greater than the height of the molten solder wetting the third electrode layer E3 located on the protrusion R1 in the direction D2.
[0129] The molten solder wets the third electrode layer E3 and then solidifies to form a solder fillet SF. The solder fillet SF is formed on the external electrode 5. The corresponding external electrode 5 and the pad electrode PE are connected via the solder fillet SF. The multilayer capacitor C1 and the electronic device ED are electrically connected.
[0130] In the electronic component device ECD, the protrusion R1 is formed, for example, along the direction D2, and the molten solder wets the third electrode layer E3 located on the side surface 3e along the direction D2. That is, the molten solder wets the area corresponding to the area E2b more easily than the area corresponding to the protrusion R1 of the third electrode layer E3. Therefore, the multilayer capacitor C1 can be firmly soldered and mounted on the electronic device ED.
[0131] Third embodiment
[0132] Reference Fig.10 , the structure of the electronic component device ECD of the third embodiment is described. Fig.10 It is a diagram showing an electronic component device according to a third embodiment.
[0133] In the third embodiment, an electronic component device ECD includes: the multilayer capacitor C1 of the first modification, and an electronic device ED. The electronic component device ECD of the third embodiment is different from the electronic component device ECD of the second embodiment in terms of the multilayer capacitor C1 mounted thereon. The following mainly describes the differences between the third embodiment and the second embodiment.
[0134] The multilayer capacitor C1 is arranged in the electronic device ED, for example, so that the main surface EDa and the side surface 3a face each other. The side surface 3a is a mounting surface. The side surface 3c may also be a mounting surface. Fig.10 In FIG. 1 , only one pad electrode PE of a pair of pad electrodes PE is shown.
[0135] In the third embodiment, similar to the second embodiment, the molten solder easily wets the third electrode layer E3 located on the area E2b, and it is difficult to wet the third electrode layer E3 located on the protrusion R1. In the stacked capacitor C1 mounted on the electronic device ED, the protrusion R1 is positioned in a manner including a first end away from the electronic device ED and a second end close to the electronic device ED. The molten solder easily wets the third electrode layer E3 to the position located at the first end of the protrusion R1. It is difficult for the molten solder to wet the third electrode layer E3 beyond the position located at the second end of the protrusion R1. The height at which the molten solder wets the third electrode layer E3 to the position corresponding to the first end of the protrusion R1 is greater than the height at which the molten solder wets the third electrode layer E3 beyond the position corresponding to the second end of the protrusion R1.
[0136] In the electronic component device ECD, the protrusion R1 is formed, for example, along the diagonal line DL1, and the molten solder wets the third electrode layer E3 located on the side surface 3e along the diagonal line DL1. That is, the molten solder mainly wets the area of the third electrode layer E3 corresponding to the area E2b closer to the electronic device E than the protrusion R1. Therefore, the multilayer capacitor C1 can be firmly soldered and mounted to the electronic device ED.
[0137] It should be understood that all aspects, advantages and features described herein may not all be achieved by any one specific example, and may not all be included in any one specific example. In fact, after various examples have been described and illustrated herein, it is apparent that the arrangement and details of other examples may be modified.
[0138] When viewed from a direction perpendicular to the side surface 3e, the ridge R1 may not overlap with the center 3e1 of the side surface 3e. When viewed from a direction perpendicular to the side surface 3e, the ridge R1 overlaps with the center 3e1 of the side surface 3e, as described above, so that the gas generated by the moisture can easily move from the position corresponding to the center 3e1 of the side surface 3e toward the position corresponding to the edge of the side surface 3e. Therefore, the multilayer capacitor C1 can reliably suppress the peeling of the second electrode layer E2.
[0139] The at least one direction may not include a direction parallel to one side of the rectangular side surface 3e. The structure in which the at least one direction includes a direction parallel to one side of the rectangular side surface 3e makes it easy for the gas generated by moisture to move toward the position corresponding to the edge of the side surface 3e as described above. Therefore, the multilayer capacitor C1 can reliably suppress the peeling of the second electrode layer E2.
[0140] The at least one direction may not include the direction along the diagonal line DL1 of the rectangular side surface 3e. The structure in which the at least one direction includes the direction along the diagonal line DL1 of the rectangular side surface 3e makes it easy for the gas generated by moisture to move toward the position corresponding to the edge of the side surface 3e as described above. Therefore, the multilayer capacitor C1 can reliably suppress the peeling of the second electrode layer E2.
[0141] For example, the protrusion R1 may be formed on the side surface 3 e along a direction intersecting with the diagonal line DL1 of the side surface 3 e having a rectangular shape.
[0142] exist Figure 7 and Figure 8 In each of the modifications shown, the ridges R1 are formed along two directions intersecting each other, but the ridges R1 may be formed along three or more directions intersecting each other.
[0143] exist Figure 7 and Figure 8 In each of the illustrated variations, the protrusion R1 is formed along four directions from the center 3e1 of the side surface 3e when viewed from a direction orthogonal to the side surface 3e, but the protrusion R1 may be formed along three directions or more than five directions from the center 3e1 of the side surface 3e when viewed from a direction orthogonal to the side surface 3e.
[0144] In the above-mentioned embodiments and modifications, a multilayer capacitor is used as an example of an electronic component, but applicable electronic components are not limited to multilayer capacitors. Applicable electronic components include, for example, multilayer inductors, multilayer varistors, multilayer piezoelectric actuators, multilayer thermistors, multilayer solid battery parts, multilayer composite components, and other multilayer electronic components, or electronic components other than multilayer electronic components.
Claims
1. An electronic component, wherein: have: a body including a side surface; and an external electrode disposed on the side surface and comprising a conductive resin layer, The conductive resin layer has protrusions formed on the side surface along at least one direction, The conductive resin layer includes, on the side surface, a region having a thickness smaller than a thickness at the protrusion.
2. The electronic component according to claim 1, wherein The protrusion overlaps with the center of the side surface when viewed from a direction perpendicular to the side surface.
3. The electronic component according to claim 1 or 2, wherein: The side surface is rectangular in shape, The at least one direction includes a direction parallel to one side of the side surface in the rectangular shape.
4. The electronic component according to any one of claims 1 to 3, wherein The side surface is rectangular in shape, The at least one direction includes a direction along a diagonal line of the side surface in the rectangular shape.
5. The electronic component according to any one of claims 1 to 4, wherein The protrusions are formed on the side surface along a plurality of directions including the at least one direction and intersecting with each other.
6. The electronic component according to any one of claims 1 to 5, wherein The side surface is rectangular in shape, The protrusion has a length in the at least one direction that is not less than half the length of a diagonal line of the side surface forming the rectangular shape and not more than the length of the diagonal line.
7. The electronic component according to any one of claims 1 to 6, wherein The protrusion has a shape in which, in a cross section obtained by cutting the protrusion along a plane parallel to the side surface, the width in the at least one direction is greater than the width in a direction perpendicular to the at least one direction.
8. The electronic component according to claim 7, wherein The protrusion has an elliptical shape when viewed from a direction perpendicular to the side surface.
9. The electronic component according to any one of claims 1 to 8, wherein The protrusion has a shape including more regions with a gentle height change in a cross section cut along a plane perpendicular to the side surface and along the at least one direction than in a cross section cut along a plane perpendicular to the side surface and the at least one direction.
10. The electronic component according to any one of claims 1 to 9, wherein The protrusion has a shape in which a change in height in a cross section cut along a plane perpendicular to the side surface and the at least one direction is steeper than a change in height in a cross section cut along a plane perpendicular to the side surface and along the at least one direction.
Citation Information
Patent Citations
Multilayer ceramic capacitor
JP1993144665A