Diamond bonding effect improving method based on argon atom repairing technology

Abstract

The invention relates to a diamond bonding effect improving method based on an argon atom repairing technology, which comprises the following steps: roughly polishing a first diamond, and cleaning a semiconductor and the polished first diamond; a first intermediate layer is deposited on the surface of the cleaned first diamond, a second intermediate layer is deposited on the surface of the cleaned semiconductor, and the first intermediate layer and the second intermediate layer are made of the same material; based on the determined surface etching parameters, etching the first intermediate layer and the second intermediate layer by using an argon atomic beam repair technology until the thickness and the roughness of the first intermediate layer meet preset conditions, and obtaining the etched first intermediate layer and the etched second intermediate layer; and bonding the etched first intermediate layer and the etched second intermediate layer to realize bonding of the first diamond and the semiconductor. According to the method, the problem that the ultrathin interlayer is difficult to bond due to the surface roughness of the diamond is solved, and the bonding stability and efficient heat dissipation performance of the diamond and the semiconductor material are both considered.

Description

Technical Field

[0001] The invention belongs to the field of semiconductor devices, and in particular relates to a method for improving diamond bonding effect based on argon atom repair technology. Background Art

[0002] As semiconductor devices develop towards higher miniaturization and integration, and with the rapid advancement of artificial intelligence and 5G communication technology, the power density of semiconductor devices and the associated heat have increased dramatically. Effective thermal management technology has become an important guarantee for maintaining excellent performance and long-term reliability of devices. Among all natural materials, diamond has become the preferred material for optimizing heat dissipation performance due to its ultra-high thermal conductivity of more than 2000W / m·K, which far exceeds conventional semiconductor materials. Diamond film or diamond particle coating technology has now become one of the core solutions widely used in the field of thermal management.

[0003] At present, the mainstream process of integrating diamond film with semiconductor materials uses materials such as silicon (Si) and aluminum nitride (AlN) as transition layers to alleviate the stress imbalance caused by the lattice mismatch and thermal expansion coefficient difference between diamond and other semiconductor materials. The mainstream bonding technology of diamond and device epitaxial layer materials is divided into two categories: high-temperature bonding and room-temperature surface activation bonding. At present, the mature solutions of these two bonding technologies rely on intermediate layer materials to alleviate the lattice mismatch and thermal expansion difference between diamond and bonded semiconductor materials.

[0004] Due to the mismatch in physical properties, diamond and mainstream semiconductor materials always face severe technical bottlenecks in the interface bonding process.

[0005] In the high-temperature bonding method, high temperature conditions are used to promote the bonding of diamond and semiconductor materials. Although this method improves the bonding effect to a certain extent, its process is complicated, and the thermal stress introduced by high-temperature treatment will have an adverse effect on the material, causing the electrical performance of the device to deteriorate. This stress accumulation may affect the long-term stability and reliability of the device in some application scenarios.

[0006] In conventional low-temperature bonding, thicker intermediate layers are usually used to alleviate the physical mismatch between diamond and other semiconductor materials. This solution solves the problem of the intermediate layer inheriting the roughness of the diamond surface, but the thicker intermediate layer makes the boundary thermal resistance of the current diamond bonding greater than 50m 2 K / GW, which severely limits the thermal conductivity of diamond, thus affecting its efficiency in high-performance heat dissipation applications.

[0007] In the existing room temperature surface activation bonding method, the bonding method using an ultra-thin intermediate layer requires the roughness of the bonding surface to be less than 1nm. However, due to the extremely high hardness of diamond, the traditional (chemical mechanical polishing, chemical mechanical polishing, CMP) process is difficult to meet the high flatness requirements of the bonding interface, resulting in a diamond bonding area of ​​less than 50% using the traditional CMP process, and a low success rate. It is necessary to use fine chemical mechanical polishing of the diamond surface with a complex process, and this more sophisticated polishing process not only increases production costs, but also limits the large-scale application and commercial promotion of this technology.

[0008] Therefore, the existing solutions have a trade-off between interface stability and thermal conductivity, and cannot take into account both the stability of the bonding between diamond and semiconductor materials and the efficient heat dissipation performance. At the same time, they have the defect of high production costs. Summary of the invention

[0009] In order to solve the above problems existing in the prior art, the present invention provides a method for improving the diamond bonding effect based on argon atom repair technology. The technical problem to be solved by the present invention is achieved through the following technical solutions:

[0010] The embodiment of the present invention provides a method for improving diamond bonding effect based on argon atom repair technology, comprising the steps of:

[0011] S1, roughly polishing the first diamond, and cleaning the semiconductor and the polished first diamond;

[0012] S2, depositing a first intermediate layer on the cleaned first diamond surface, and depositing a second intermediate layer on the cleaned semiconductor surface, wherein the first intermediate layer and the second intermediate layer are made of the same material;

[0013] S3, based on the surface etching parameters determined in the preliminary experiment, using the argon atomic beam repair technology to etch the first intermediate layer and the second intermediate layer until the thickness and roughness of the first intermediate layer meet the preset conditions, thereby obtaining the etched first intermediate layer and the etched second intermediate layer; the preset conditions include: the roughness is less than the preset roughness and the thickness is less than the preset thickness;

[0014] S4, bonding the etched first intermediate layer and the etched second intermediate layer to achieve bonding between the first diamond and the semiconductor.

[0015] In one embodiment of the present invention, the material of the semiconductor includes any one of Si, SiC, GaN, and GaO;

[0016] The materials of the first intermediate layer and the second intermediate layer include any one of Si, Al2O3, AlN, and BN.

[0017] In one embodiment of the present invention, the roughness of the polished first diamond is less than 2 nm.

[0018] In one embodiment of the present invention, step S2 comprises:

[0019] The first intermediate layer is deposited on the cleaned first diamond surface by sputtering using a room temperature bonding machine, and the second intermediate layer is deposited on the cleaned semiconductor surface at the same time.

[0020] In one embodiment of the present invention, the thickness of the first intermediate layer and the thickness of the second intermediate layer are both 10 nm-20 nm.

[0021] In one embodiment of the present invention, the method for determining the surface etching parameters comprises the steps of:

[0022] performing rough polishing and cleaning on the second diamond in sequence to obtain a cleaned second diamond;

[0023] Depositing a third intermediate layer on the cleaned second diamond surface; wherein the material of the third intermediate layer is the same as that of the first intermediate layer;

[0024] Within a preset time, etching the third intermediate layer using an argon atomic beam repair technology to control the thickness and roughness of the third intermediate layer;

[0025] When the thickness and roughness of the third intermediate layer after etching do not meet the preset conditions, the third intermediate layer is repeatedly etched using the argon atomic beam repair technology; when the thickness and roughness of the third intermediate layer after etching meet the preset conditions, the etching vacuum, etching voltage, etching current and total etching time are determined to obtain the surface etching parameters.

[0026] In one embodiment of the present invention, the etching vacuum is less than 1.5*10 -5 Pa, the etching voltage is 1000-1500V, the etching current is 50-500mA, the preset time is 30-50s, and the total etching time is an integer multiple of the preset time.

[0027] In one embodiment of the present invention, the preset conditions include: the roughness is less than 1 nm and the thickness is less than 10 nm.

[0028] In one embodiment of the present invention, the interface thermal resistance of the intermediate layer formed by bonding the first intermediate layer after etching and the second intermediate layer after etching is less than 10m 2 K / GW.

[0029] In one embodiment of the present invention, step S4 includes:

[0030] Using a room temperature bonding machine, the temperature is room temperature and the vacuum degree is less than 1.5*10 -5 Under the condition of 0.1-20 MPa, a pressure of 0.1-20 MPa is applied to the front sides of the etched first intermediate layer and the etched second intermediate layer for bonding, and the bonding time is 200-500 s to achieve bonding between the first diamond and the semiconductor.

[0031] Compared with the prior art, the present invention has the following beneficial effects:

[0032] 1. The method of the present invention uses argon atomic beam repair technology to etch the first intermediate layer, transforming the problem of mismatch between the physical properties of diamond and the surface of common semiconductors into an optimization problem of the intermediate layer material, optimizing the roughness of the intermediate layer through interface engineering, and realizing effective regulation of the diamond bonding interface, effectively solving the problem of difficulty in bonding the ultra-thin intermediate layer caused by the roughness of the diamond surface, reducing the strict requirements for the roughness of diamond, and greatly reducing the high process cost caused by the difficulty in fine CMP polishing of diamond;

[0033] 2. The method of the present invention uses argon atomic beam repair technology to etch the first intermediate layer, and simultaneously realizes polishing and thinning of the intermediate layer, breaking the trade-off relationship between the roughness of the diamond surface and the thickness of the intermediate layer. It not only solves the problem of relying on the thickness of the intermediate layer to weaken the roughness of the diamond surface, but also can further thin the intermediate layer material without adding additional process steps, overcoming the limitation that the existence of an excessively thick intermediate layer will significantly hinder the heat dissipation path, achieving lower intermediate layer interface thermal resistance, and liberating the high efficiency performance of diamond as a heat dissipation layer to a greater extent, taking into account the stability of the bonding between diamond and semiconductor materials and the high efficiency heat dissipation performance;

[0034] 3. In the present invention, the deposition, etching and bonding of the intermediate layer are all carried out in a room temperature bonding machine. The integration of the equipment enables the entire bonding method to be implemented in the bonding machine, thereby improving the bonding effect and success rate. The bonding area is close to 100%, and the success rate is close to 100%, ensuring the reliability and stability of the process. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 A schematic flow chart of a method for improving diamond bonding effect based on argon atom repair technology provided in an embodiment of the present invention;

[0036] Figure 2a-2d A schematic diagram of the process of a method for improving diamond bonding effect based on argon atom repair technology provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0037] The present invention is further described in detail below with reference to specific embodiments, but the embodiments of the present invention are not limited thereto.

[0038] Embodiment 1

[0039] See also Figure 1 , Figure 1 A schematic flow chart of a method for improving diamond bonding effect based on argon atom repair technology provided in an embodiment of the present invention. The method for improving diamond bonding effect based on argon atom repair technology comprises the following steps:

[0040] S1, roughly polishing the first diamond, and cleaning the semiconductor and the polished first diamond;

[0041] S2, depositing a first intermediate layer on the cleaned first diamond surface, and depositing a second intermediate layer on the cleaned semiconductor surface, wherein the first intermediate layer and the second intermediate layer are made of the same material;

[0042] S3. Based on the surface etching parameters determined in the preliminary experiment, the first intermediate layer and the second intermediate layer are etched using an argon atomic beam repair technology until the thickness and roughness of the first intermediate layer meet preset conditions, thereby obtaining the etched first intermediate layer and the etched second intermediate layer; the preset conditions include: the roughness is less than a preset roughness and the thickness is less than a preset thickness;

[0043] S4, bonding the etched first intermediate layer and the etched second intermediate layer to achieve bonding between the first diamond and the semiconductor.

[0044] In a specific embodiment, the material of the semiconductor includes but is not limited to any one of Si, SiC, GaN, and GaO; the materials of the first intermediate layer and the second intermediate layer include but are not limited to any one of Si, Al2O3, AlN, and BN.

[0045] The bonding method of this embodiment is suitable for efficient bonding of Si, SiC, GaN, GaO and other common semiconductor materials with diamond, which expands the applicability and versatility of the technology. In addition, the intermediate layer material processing scheme shows excellent results when using Si as the intermediate layer, and also has good compatibility with other intermediate materials such as Al2O3, AlN, BN, etc., ensuring the multi-material applicability of the process and enhancing the flexibility of material selection.

[0046] See also Figure 2a-2d , Figure 2a-2dA process diagram of a method for improving diamond bonding effect based on argon atom repair technology provided by an embodiment of the present invention. Taking the semiconductor as a single crystal GaN with a roughness Ra less than 0.3nm, the intermediate layer material as an amorphous Si nanolayer, and the diamond as a diamond material prepared by microwave plasma chemical vapor deposition as an example, the method for improving diamond bonding effect based on argon atom repair technology includes the following steps:

[0047] S1. Roughly polishing the first diamond, and cleaning the semiconductor and the polished first diamond.

[0048] First, the first diamond is roughly polished by using a chemical mechanical polishing process CMP, and the roughness of the first diamond after polishing is controlled to be less than 2nm. The specific polishing method is: first select a suitable polishing liquid; then set the polishing parameters of the CMP equipment: polishing disc speed 70rpm, polishing head speed 23rpm, polishing temperature 50℃; then, put the first diamond into the CMP equipment and start polishing until the roughness of the first diamond is less than 2nm, then stop polishing, and obtain the polished first diamond, such as Figure 2a As shown, Figure 2a This is a schematic diagram of diamond after traditional CMP polishing. It can be seen that the traditional CMP polishing process cannot achieve a flat diamond surface.

[0049] Then, the polished first diamond and the semiconductor material to be bonded are cleaned at the same time to ensure that there are no particles left on the surface of the first diamond and the semiconductor. Specifically, first, the CMP-polished diamond and single-crystal GaN material are ultrasonically cleaned in an acetone solution for 3 minutes, with an ultrasonic intensity of 3.0; then, the sample is placed in a stripping solution at a temperature of 60°C and heated in a water bath for 5 minutes; then, the sample is ultrasonically cleaned in an acetone solution and an ethanol solution in turn for 3 minutes, with an ultrasonic intensity of 3.0; then, the sample is ultrasonically cleaned in deionized water for 5 minutes, with an ultrasonic intensity of 3.0; finally, the sample is dried using high-purity nitrogen to ensure that there are no particles left.

[0050] S2. Depositing a first intermediate layer on the cleaned first diamond surface, and depositing a second intermediate layer on the cleaned semiconductor surface, wherein the first intermediate layer and the second intermediate layer are made of the same material.

[0051] Specifically, a first intermediate layer is deposited on the surface of the cleaned first diamond by sputtering using a room temperature bonding machine, and a second intermediate layer is deposited on the surface of the cleaned semiconductor. The specific process is: put the cleaned first diamond and the cleaned semiconductor into the bonding machine, and set the vacuum degree of the bonding machine to less than 1.5*10 -5Pa, depositing 10nm-20nm amorphous Si nanolayers on the first diamond surface and the GaN material surface by sputtering to form the first intermediate layer and the second intermediate layer, such as Figure 2b As shown, Figure 2b In the case of diamond bonding, the intermediate layer material inherits the roughness of the diamond surface, which can lead to poor bonding results.

[0052] S3. Based on the surface etching parameters determined in the preliminary experiment, the first intermediate layer and the second intermediate layer are etched using argon atomic beam repair technology until the thickness and roughness of the first intermediate layer meet preset conditions, thereby obtaining the etched first intermediate layer and the etched second intermediate layer; the preset conditions include: the roughness is less than the preset roughness and the thickness is less than the preset thickness.

[0053] Specifically, keep it less than 1.5*10 -5 The vacuum degree of Pa is set, and based on the surface etching parameters determined in the pre-experiment, the first intermediate layer on the surface of the first diamond and the second intermediate layer on the surface of the single crystal GaN material are etched by using an argon atomic beam through a room temperature bonding machine, and the roughness and thickness of the first intermediate layer and the second intermediate layer are simultaneously controlled to achieve polishing and thinning of the first intermediate layer and the second intermediate layer. When the thickness and roughness of the first intermediate layer meet the preset conditions, the etching is stopped to obtain the first intermediate layer after etching and the second intermediate layer after etching, such as Figure 2c As shown, Figure 2c It shows that the etching effect of argon atomic beam repair technology can achieve the fine flatness and controllable thinning effect of the amorphous Si nanolayer on the diamond surface at the same time.

[0054] The preset conditions include: the roughness is less than a preset roughness and the thickness is less than a preset thickness. Exemplarily, the preset conditions are that the roughness is less than 1 nm and the thickness is less than 10 nm.

[0055] Furthermore, through the etching effect of the argon atomic beam repair technology, the fine flatness and controllable thinning effect of the first intermediate layer on the first diamond surface can be achieved at the same time.

[0056] In the process of etching the first intermediate layer using the argon atomic beam repair technology in this embodiment, the argon atomic beam not only breaks the chemical bonds on the surface of the material, but also knocks off the atoms on the surface of the material, thereby achieving the effects of polishing and thinning, thereby realizing the controllable thickness and roughness of the intermediate layer.

[0057] S4, bonding the etched first intermediate layer and the etched second intermediate layer to achieve bonding between the first diamond and the semiconductor.

[0058] Specifically, the etched first intermediate layer and the etched second intermediate layer are bonded using a room temperature bonding machine, that is, the temperature is room temperature and the vacuum degree is maintained at less than 1.5*10 -5Pa, the active Si nano-surface of the GaN material and the active Si nano-surface of the diamond are bonded to each other under a pressure of 0.1-20 MPa, and the bonding time is 200-500 s to achieve the first bonding of the diamond and the semiconductor, such as Figure 2d shown.

[0059] Specifically, the interface thermal resistance of the intermediate layer formed by bonding the first intermediate layer after etching and the second intermediate layer after etching is less than 10m 2 K / GW. It can be understood that the first intermediate layer after etching and the second intermediate layer after etching are integrated to form an intermediate layer between the first diamond and the semiconductor. The interface thermal resistance value of the intermediate layer will be less than 10m 2 K / GW, the interface thermal resistance is less than one fifth of the conventional bonding boundary thermal resistance.

[0060] The integration of the equipment in this embodiment enables the entire bonding method to be implemented in a bonding machine, thereby improving the bonding effect and success rate. The bonding area is close to 100%, and the success rate is close to 100%, ensuring the reliability and stability of the process.

[0061] The method of this embodiment uses argon atomic beam repair technology to etch the first intermediate layer, transforming the problem of mismatch between the physical properties of diamond and common semiconductor surfaces into an optimization problem of the intermediate layer material, and optimizing the roughness of the intermediate layer through interface engineering, thereby achieving effective regulation of the diamond bonding interface, effectively solving the problem of uneven surface of the intermediate layer caused by the roughness of the diamond surface, reducing the strict requirements for the roughness of diamond, and greatly reducing the high process cost caused by the difficulty of fine CMP polishing of diamond, thereby improving the economy and operability of the process.

[0062] The method of this embodiment uses argon atomic beam repair technology to etch the first intermediate layer, and simultaneously achieves polishing and thinning of the intermediate layer, breaking the trade-off relationship between the roughness of the diamond surface and the thickness of the intermediate layer. It not only solves the problem of relying on the thickness of the intermediate layer to weaken the roughness of the diamond surface, but also can further thin the intermediate layer material without adding additional process steps, overcoming the limitation that the existence of an excessively thick intermediate layer will significantly hinder the heat dissipation path, achieving lower intermediate layer interface thermal resistance, and liberating the high-efficiency performance of diamond as a heat dissipation layer to a greater extent, taking into account the stability of the bonding between diamond and semiconductor materials and the high-efficiency heat dissipation performance; in addition, the integrated design of the equipment ensures the reliability and stability of the process, so that the diamond bonding area is close to 100%, and the success rate is close to 100%.

[0063] This embodiment utilizes the argon atom repair technology of the room temperature bonding machine, which not only completes the equipment integration of the process steps, but also after determining the parameters of the appropriate diamond argon atom repair technology, it performs fine processing on the intermediate layer material of the diamond bond without adding additional process steps, thereby realizing the etching of the intermediate layer material. The entire process can be realized in the bonding machine, which improves the bonding effect and success rate and ensures the reliability and stability of the process.

[0064] Embodiment 2

[0065] Based on the first embodiment, this embodiment provides a method for determining surface etching parameters, the method comprising the steps of:

[0066] S1. Roughly polishing and cleaning the second diamond in sequence to obtain a cleaned second diamond.

[0067] Specifically, first, the second diamond is roughly polished by using the chemical mechanical polishing process CMP, and the polishing method is: first, a suitable polishing liquid is selected; then the polishing parameters of the CMP equipment are set: the polishing disk speed is 70rpm, the polishing head speed is 23rpm, and the polishing temperature is 50°C; then, the second diamond is placed in the CMP equipment and polishing is started, and the roughness of the second diamond is controlled to be less than 2nm; finally, the roughness of the polished diamond is measured and the results are recorded.

[0068] Then, the polished second diamond was cleaned, and the cleaning process was as follows: first, the second diamond that had been CMP polished was placed in an acetone solution for ultrasonic cleaning for 3 minutes, with an ultrasonic intensity of 3.0; then, the sample was placed in a stripping solution at a temperature of 60°C and heated in a water bath for 5 minutes; then, the sample was placed in an acetone solution and an ethanol solution in turn for ultrasonic cleaning for 3 minutes, with an ultrasonic intensity of 3.0; immediately afterwards, the sample was placed in deionized water for ultrasonic cleaning for 5 minutes, with an ultrasonic intensity of 3.0; finally, the sample was dried using high-purity nitrogen to ensure that no particles remained.

[0069] S2. Depositing a third intermediate layer on the cleaned second diamond surface; wherein the material of the third intermediate layer is the same as that of the first intermediate layer.

[0070] Specifically, the cleaned first diamond and the cleaned semiconductor are placed in a bonding machine, and the vacuum degree of the bonding machine is set to be less than 1.5*10 -5 Pa, a third intermediate layer of 10nm-20nm is deposited on the second diamond surface by sputtering. The material of the third intermediate layer is the same as that of the first intermediate layer. Exemplarily, the third intermediate layer is an amorphous Si nanolayer.

[0071] S4. Within a preset time, the third intermediate layer is etched using an argon atomic beam repair technology to control the thickness and roughness of the third intermediate layer.

[0072] Specifically, keep it less than 1.5*10 -5 Pa, and continue to etch the third intermediate layer on the second diamond surface by argon atomic beam in the bonding machine. The surface roughness and thickness of the third intermediate layer are controlled by the etching effect of the argon atomic beam, and the preset etching time is set to 30-50s.

[0073] S5. When the thickness and roughness of the third intermediate layer after etching do not meet the preset conditions, the third intermediate layer is repeatedly etched using argon atomic beam repair technology, that is, step S4 is repeated; when the thickness and roughness of the third intermediate layer after etching meet the preset conditions, the etching vacuum, etching voltage, etching current and total etching time are determined to obtain surface etching parameters.

[0074] Specifically, a diamond sample is taken out from a room temperature bonding machine, and the surface roughness of the third intermediate layer on the second diamond surface is measured using an atomic force microscope (AFM), and the thickness of the third intermediate layer on the second diamond surface is measured using a scanning electron microscope (SEM). When the roughness of the third intermediate layer on the diamond surface meets the roughness of less than 1nm and the thickness of less than 10nm, the key parameters used in steps S1-S4 are recorded and used as standard surface etching parameters; the surface etching parameters include the roughness of the initial CMP of the diamond material, the model of the room temperature bonding machine and the etching vacuum, the target material (the material of the third intermediate layer) used, the working conditions (etching voltage, etching current), and the total etching time.

[0075] For example, the etching vacuum is less than 1.5*10 -5 Pa, the etching voltage is 1000-1500V, the etching current is 50-500mA, the preset time is 30-50s, and the total etching time is an integer multiple of the preset time. Preferably, the etching voltage is 1150V-1250V, and the etching current is 150-250mA.

[0076] It can be understood that when the third intermediate layer on the second diamond surface after argon atomic beam etching does not meet the expected results of the argon atomic beam repair technology, it is not necessary to use a new diamond material for another experiment; after cleaning the second diamond sample that has been etched with an argon atomic beam, the argon atomic beam etching of step S4 can be directly repeated to further reduce the experimental cost and time. Then, the roughness and thickness of the sample that has been etched with an argon atomic beam again are evaluated; when the result is as expected, the sum of the etching time during the argon atomic beam etching iteration is determined as the total etching time of the argon atomic beam repair technology, thereby determining the surface etching parameters; when the result does not meet expectations, repeat step S4 for argon atomic beam etching. Afterwards, a new preliminary experiment is conducted with the surface etching parameters determined after the iteration to ensure the accuracy of the parameters and the repeatability of the experiment.

[0077] It should be noted that after the surface etching parameters are determined, the determined surface etching parameters can be directly used to bond other diamond samples of the same type. For different types of diamond samples, the surface etching parameters need to be re-determined.

[0078] The method for determining the surface etching parameters of this embodiment has an excellent iterative process. The method can strike a balance between the bonding effect and the actual economic cost to achieve a process solution for the diamond interface repair technology for different expected products. The method has broad commercial application prospects and provides a solid technical foundation and guarantee for future large-scale industrialization.

[0079] The above contents are further detailed descriptions of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is limited to these descriptions. For ordinary technicians in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the protection scope of the present invention.

Claims

1. A method for improving diamond bonding effect based on argon atom repair technology, characterized in that: Includes steps: S1, roughly polishing the first diamond, and cleaning the semiconductor and the polished first diamond; S2, depositing a first intermediate layer on the cleaned first diamond surface, and depositing a second intermediate layer on the cleaned semiconductor surface, wherein the first intermediate layer and the second intermediate layer are made of the same material; S3, based on the surface etching parameters determined in the preliminary experiment, using the argon atomic beam repair technology to etch the first intermediate layer and the second intermediate layer until the thickness and roughness of the first intermediate layer meet the preset conditions, thereby obtaining the etched first intermediate layer and the etched second intermediate layer; the preset conditions include: the roughness is less than the preset roughness and the thickness is less than the preset thickness; S4, bonding the etched first intermediate layer and the etched second intermediate layer to achieve bonding between the first diamond and the semiconductor.

2. The method for improving diamond bonding effect based on argon atom repair technology according to claim 1, characterized in that: The semiconductor material includes any one of Si, SiC, GaN and GaO; The materials of the first intermediate layer and the second intermediate layer include any one of Si, Al2O3, AlN, and BN.

3. The method for improving diamond bonding effect based on argon atom repair technology according to claim 1, characterized in that: The roughness of the polished first diamond is less than 2 nm.

4. The method for improving diamond bonding effect based on argon atom repair technology according to claim 1, characterized in that: Step S2 includes: The first intermediate layer is deposited on the cleaned first diamond surface by sputtering using a room temperature bonding machine, and the second intermediate layer is deposited on the cleaned semiconductor surface at the same time.

5. The method for improving diamond bonding effect based on argon atom repair technology according to claim 4, characterized in that: The thickness of the first intermediate layer and the thickness of the second intermediate layer are both 10 nm-20 nm.

6. The method for improving diamond bonding effect based on argon atom repair technology according to claim 1, characterized in that: The method for determining the surface etching parameters comprises the steps of: performing rough polishing and cleaning on the second diamond in sequence to obtain a cleaned second diamond; Depositing a third intermediate layer on the cleaned second diamond surface; wherein the material of the third intermediate layer is the same as that of the first intermediate layer; Within a preset time, etching the third intermediate layer using an argon atomic beam repair technology to control the thickness and roughness of the third intermediate layer; When the thickness and roughness of the third intermediate layer after etching do not meet the preset conditions, the third intermediate layer is repeatedly etched using the argon atomic beam repair technology; when the thickness and roughness of the third intermediate layer after etching meet the preset conditions, the etching vacuum, etching voltage, etching current and total etching time are determined to obtain the surface etching parameters.

7. The method for improving diamond bonding effect based on argon atom repair technology according to claim 6, characterized in that: The etching vacuum degree is less than 1.5*10 -5 Pa, the etching voltage is 1000-1500V, the etching current is 50-500mA, the preset time is 30-50s, and the total etching time is an integer multiple of the preset time.

8. The method for improving diamond bonding effect based on argon atom repair technology according to claim 1 or 6, characterized in that: The preset conditions include: the roughness is less than 1 nm and the thickness is less than 10 nm.

9. The method for improving diamond bonding effect based on argon atom repair technology according to claim 1, characterized in that: The interface thermal resistance of the intermediate layer formed by bonding the first intermediate layer after etching and the second intermediate layer after etching is less than 10m 2 K / GW.

10. The method for improving diamond bonding effect based on argon atom repair technology according to claim 1, characterized in that: Step S4 includes: Using a room temperature bonding machine, the temperature is room temperature and the vacuum degree is less than 1.5*10 -5 Under the condition of 0.1-20 MPa, a pressure of 0.1-20 MPa is applied to the front sides of the etched first intermediate layer and the etched second intermediate layer for bonding, and the bonding time is 200-500 s to achieve bonding between the first diamond and the semiconductor.

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