Silicon wafer edge etching equipment and silicon wafer edge etching method

Abstract

The invention provides silicon wafer edge etching equipment and a silicon wafer edge etching method, and relates to the technical field of semiconductors, the silicon wafer edge etching equipment comprises an upper bearing table and a lower bearing table which are oppositely arranged in the vertical direction, and a silicon wafer is located on the side, facing the upper bearing table, of the lower bearing table; the controller is connected with the upper bearing table and / or the lower bearing table, and the controller is used for acquiring the thickness of the silicon wafer and controlling the upper bearing table to move in the vertical direction and / or controlling the lower bearing table to move in the vertical direction according to the thickness, so that the distance between the upper bearing table and the lower bearing table is equal to the thickness of the silicon wafer. According to the invention, fragments caused by excessive pressure between the upper bearing table and the silicon wafer as well as between the lower bearing table and the silicon wafer can be avoided, the silicon wafer can be fixed through the upper bearing table and the lower bearing table, the silicon wafer is prevented from deviating in the subsequent processing process, and the upper bearing table can cover the area, which does not need to be etched, of the upper surface of the silicon wafer, so that the etching efficiency is improved. And etching of the areas which do not need to be etched is avoided.

Description

Technical Field

[0001] The invention relates to the field of semiconductor technology, and in particular to a silicon wafer edge etching device and a silicon wafer edge etching method. Background Art

[0002] During the silicon wafer processing, dopants are added to adjust the resistivity of the silicon wafer. Silicon wafers with more dopants are called heavily doped silicon wafers. Heavily doped silicon wafers need to be back-sealed because they are doped with more dopants to prevent the dopants from diffusing into the gas and partially entering the newly grown epitaxial layer during the subsequent epitaxial growth process.

[0003] After the back-sealing treatment of the silicon wafer, the edge of the silicon wafer needs to be etched to prevent edge defects or dislocations in the subsequent epitaxial growth process. When etching the edge of the silicon wafer, the two opposite surfaces of the silicon wafer are squeezed and fixed, and the width required for etching is left at the edge of the silicon wafer, and then the edge of the silicon wafer is etched. However, when squeezing and fixing the silicon wafer, the squeezing pressure cannot be controlled. If the squeezing pressure is too high, the silicon wafer will be damaged and fragments will be generated. If the squeezing pressure is too low, the area that does not need to be etched will be etched, affecting the quality of the silicon wafer. Summary of the invention

[0004] The embodiment of the present invention provides a silicon wafer edge etching device and a silicon wafer edge etching method, which are used to solve the problem in the prior art that the pressure for squeezing and fixing the silicon wafer cannot be controlled when edge etching is performed on the silicon wafer.

[0005] To solve the above technical problems, the embodiments of the present invention provide the following technical solutions:

[0006] An embodiment of the present invention provides a silicon wafer edge etching device, comprising:

[0007] An upper loading platform and a lower loading platform are arranged opposite to each other in the vertical direction, the silicon wafer is located on a side of the lower loading platform facing the upper loading platform, and the upper loading platform can move in the vertical direction and / or the lower loading platform can move in the vertical direction;

[0008] A controller is connected to the upper carrier and / or to the lower carrier, and is used to obtain the thickness of the silicon wafer and control the upper carrier to move in the vertical direction and / or control the lower carrier to move in the vertical direction according to the thickness, so that the distance between the upper carrier and the lower carrier is equal to the thickness of the silicon wafer.

[0009] In some embodiments, the silicon wafer edge etching equipment further includes:

[0010] A thickness detection component, which is disposed on the sides of the upper loading platform and the lower loading platform, and is connected to the controller;

[0011] The thickness detection component is used to detect the thickness of the silicon wafer and send the thickness of the silicon wafer to the controller.

[0012] In some embodiments, before placing the silicon wafer on the side of the lower supporting platform facing the upper supporting platform, the controller is also used to control the lower supporting platform to be located at a first preset height, and to control the upper supporting platform to be located at a second preset height, wherein the second preset height is higher than the first preset height, and the height difference between the first preset height and the second preset height is greater than the thickness of the silicon wafer.

[0013] In some embodiments, the controller is specifically used to determine the moving distance according to the height difference and the thickness of the silicon wafer;

[0014] Furthermore, the controller is further specifically used for at least one of the following:

[0015] Controlling the upper supporting platform to move downward in the vertical direction by the moving distance;

[0016] Controlling the lower supporting platform to move upward in the vertical direction by the moving distance;

[0017] The upper supporting platform is controlled to move downward a first distance in the vertical direction, and the lower supporting platform is controlled to move upward a second distance in the vertical direction, wherein the moving distance is equal to the sum of the first distance and the second distance.

[0018] In some embodiments, the size of the first carrying surface of the upper carrying platform facing the silicon wafer is smaller than the size of the upper surface of the silicon wafer;

[0019] The size of the second carrying surface of the lower carrying platform facing the silicon wafer is smaller than the size of the lower surface of the silicon wafer;

[0020] The edge of the silicon wafer is exposed through the first carrying surface and the second carrying surface.

[0021] In some embodiments, the silicon wafer edge etching equipment further includes:

[0022] A nozzle is arranged at the edge of the silicon wafer and is used to spray etching liquid toward the edge of the silicon wafer.

[0023] In some embodiments, the lower supporting platform fixes the silicon wafer by vacuum adsorption.

[0024] In some embodiments, the upper carrying platform and the lower carrying platform are coaxially arranged;

[0025] The central axis of the silicon wafer is located on the axis of the upper supporting platform and the lower supporting platform.

[0026] In some embodiments, a sealing ring is provided on the edge of the first bearing surface;

[0027] A sealing ring is arranged on the edge of the second bearing surface.

[0028] An embodiment of the present invention further provides a silicon wafer edge etching method, which is applied to the silicon wafer edge etching device as described above, and the method comprises:

[0029] Get the thickness of the silicon wafer;

[0030] Placing the silicon wafer on a side of the lower carrier platform facing the upper carrier platform;

[0031] Controlling the upper platform to move in a vertical direction and / or controlling the lower platform to move in a vertical direction according to the thickness, so that the distance between the upper platform and the lower platform is equal to the thickness of the silicon wafer;

[0032] Wherein, the upper bearing platform and the lower bearing platform are arranged opposite to each other in the vertical direction.

[0033] The embodiments of the present invention have the following beneficial effects:

[0034] The silicon wafer edge etching equipment provided in the embodiment of the present invention first sets the silicon wafer on the side of the lower supporting platform facing the upper supporting platform, that is, sets it above the lower supporting platform, and the controller obtains the thickness of the silicon wafer, and controls the upper supporting platform to move in the vertical direction and / or controls the lower supporting platform to move in the vertical direction according to the thickness, so that the distance between the upper supporting platform and the lower supporting platform is equal to the thickness of the silicon wafer. In this case, the upper supporting platform and the lower supporting platform are just in contact with the surface of the silicon wafer, and no excessive pressure is generated between the upper supporting platform, the lower supporting platform and the silicon wafer, that is, the pressure between the upper supporting platform, the lower supporting platform and the silicon wafer can be better controlled by moving the distance, and the excessive pressure between the upper supporting platform, the lower supporting platform and the silicon wafer can be avoided to cause fragmentation, and the silicon wafer can be fixed by the upper supporting platform and the lower supporting platform to prevent the silicon wafer from shifting during subsequent processing, and the upper supporting platform can cover the areas on the upper surface of the silicon wafer that do not need to be etched to avoid etching in these areas that do not need to be etched. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 A schematic diagram showing the structure of a silicon wafer edge etching device provided by an embodiment of the present invention;

[0036] Figure 2 A flow chart showing a silicon wafer edge etching method provided in an embodiment of the present invention.

[0037] Reference numerals:

[0038] 1: Upper support platform; 2: Lower support platform; 3: Silicon wafer. DETAILED DESCRIPTION

[0039] In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention more clear, a detailed description will be given below with reference to the accompanying drawings and specific embodiments.

[0040] In order to make the purpose, technical solution and advantages of the embodiment of the present invention clearer, the technical solution of the embodiment of the present invention will be clearly and completely described below in conjunction with the drawings of the embodiment of the present invention. Obviously, the described embodiment is a part of the embodiment of the present invention, not all of the embodiments. Based on the described embodiment of the present invention, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present invention.

[0041] In order to solve the problem in the prior art that the pressure for squeezing and fixing the silicon wafer cannot be controlled when edge etching is performed on the silicon wafer, an embodiment of the present invention provides a silicon wafer edge etching device and a silicon wafer edge etching method.

[0042] like Figure 1 As shown, an embodiment of the present invention provides a silicon wafer edge etching device, comprising:

[0043] An upper loading platform 1 and a lower loading platform 2 are arranged opposite to each other in the vertical direction, and a silicon wafer 3 is located on a side of the lower loading platform 2 facing the upper loading platform 1;

[0044] As the name implies, the upper carrying platform 1 and the lower carrying platform 2 are arranged opposite to each other in the vertical direction, and the upper carrying platform 1 is located above the lower carrying platform 2 .

[0045] Among them, the upper supporting platform 1 and the lower supporting platform 2 can be cylindrical or approximately cylindrical, and the central axes of the upper supporting platform 1 and the lower supporting platform 2 are located on the same straight line, that is, it can be understood that the upper supporting platform 1 and the lower supporting platform 2 are relatively arranged.

[0046] The upper carrying platform 1 can move in the vertical direction and / or the lower carrying platform 2 can move in the vertical direction.

[0047] That is, in the silicon wafer edge etching equipment, only the upper supporting platform 1 may be able to rise or fall in the vertical direction, or only the lower supporting platform 2 may be able to rise or fall in the vertical direction, or both the upper supporting platform 1 and the lower supporting platform 2 may be able to rise or fall in the vertical direction.

[0048] During control, the silicon wafer edge etching equipment may include only one driving mechanism, which can only be connected to the upper carrier 1 and only drives the upper carrier 1 to rise or fall in the vertical direction; or, the driving mechanism can only be connected to the lower carrier 2 and only drives the lower carrier 2 to rise or fall in the vertical direction; or, the driving mechanism is respectively connected to the upper carrier 1 and the lower carrier 2 and drives the upper carrier 1 and the lower carrier 2 to rise or fall in the vertical direction.

[0049] During control, the silicon wafer edge etching device may also include two driving mechanisms, one of which is connected to the upper carrier 1 and the other is connected to the lower carrier 2, respectively driving the upper carrier 1 and the lower carrier 2 to rise or fall in the vertical direction.

[0050] A controller (or control device, which is not shown in the figure), wherein the controller is connected to the upper support platform 1 and / or to the lower support platform 2, wherein the controller can be connected to the upper support platform 1 and / or to the lower support platform 2 through a driving structure.

[0051] The controller is used to obtain the thickness of the silicon wafer 3, and control the upper carrier 1 to move in the vertical direction and / or control the lower carrier 2 to move in the vertical direction according to the thickness, so that the distance between the upper carrier 1 and the lower carrier 2 is equal to the thickness of the silicon wafer, that is, in this case, the surface of the upper carrier 1 and the silicon wafer 3, and the surface of the lower carrier 2 and the silicon wafer 3 are just in contact (or called critical contact between the upper carrier 1 and the silicon wafer 3, the upper carrier 1 will not generate a squeezing force on the lower carrier 2 through the silicon wafer 3), at this time, there will be no excessive pressure between the upper carrier 1 and the silicon wafer 3, and between the lower carrier 2 and the silicon wafer 3. By controlling the upper carrier 1 and the lower carrier 2 to move up and down, the pressure between the upper carrier 1, the lower carrier and the silicon wafer can be better controlled, avoiding excessive squeezing force between the upper carrier 1, the lower carrier 2 and the silicon wafer 3, causing the silicon wafer to be fragmented or damaged, and further avoiding the impact of the fragments on the silicon wafer edge etching equipment, avoiding the downtime of the silicon wafer edge etching equipment and the high maintenance costs. However, in this case, the silicon wafer can be fixed by the upper supporting platform 1 and the lower supporting platform 2 to prevent the silicon wafer from shifting during subsequent processing. The upper supporting platform 1 can also cover the areas on the upper surface of the silicon wafer that do not need to be etched to avoid etching in these areas that do not need to be etched.

[0052] In some embodiments, the silicon wafer edge etching equipment further includes:

[0053] A thickness detection component is disposed on the side of the upper loading platform 1 and the lower loading platform 2, or it is understood that the thickness detection component is disposed on one side of the relatively disposed upper loading platform 1 and the lower loading platform 2, and the thickness detection component is connected to the controller.

[0054] The thickness detection component is used to detect the thickness of the silicon wafer 3 and send the thickness of the silicon wafer to the controller.

[0055] That is, before the silicon wafer is transferred to the side of the lower loading platform 2 facing the upper loading platform 1, the thickness of the silicon wafer is first tested by the thickness detection component. After the thickness of the silicon wafer is obtained, the thickness of the silicon wafer is sent to the controller, so that the controller controls the upper loading platform 1 to move in the vertical direction and / or controls the lower loading platform 2 to move in the vertical direction according to the thickness of the silicon wafer, so that the distance between the upper loading platform 1 and the lower loading platform 2 is equal to the thickness of the silicon wafer.

[0056] As an optional implementation, the thickness measurement component uses a capacitance-voltage method to measure the thickness values ​​of multiple measurement points on any one line of the silicon wafer, and takes the average value of the thickness values ​​corresponding to the multiple measurement points as the thickness of the silicon wafer. The thickness of the silicon wafer obtained by the above method is more accurate.

[0057] Specifically, when the capacitance-voltage method is used to measure the thickness of a silicon wafer, two upper and lower capacitance sensors are arranged vertically opposite to each other. When the silicon wafer passes between the upper and lower capacitance sensors, the upper and lower capacitance sensors will generate different voltage values. The thickness of the silicon wafer can be determined based on the voltage values.

[0058] In some embodiments, before placing the silicon wafer 3 on the side of the lower supporting platform 2 facing the upper supporting platform 1, the controller is also used to control the lower supporting platform 2 to be located at a first preset height, and to control the upper supporting platform 1 to be located at a second preset height, wherein the second preset height is higher than the first preset height, and the height difference between the first preset height and the second preset height is greater than the thickness of the silicon wafer.

[0059] That is, before placing the silicon wafer 3 on the lower carrier 2, or it can be understood that after the silicon wafer edge etching device provided in this embodiment is used to process the previous silicon wafer, the lower carrier 2 is restored to the first preset height, and the upper carrier 1 is restored to the second preset height (also called a reset operation), and then the silicon wafer is placed on the lower carrier 2, and then the subsequent operation of controlling the upper carrier to move in the vertical direction and / or controlling the lower carrier to move in the vertical direction according to the thickness of the silicon wafer is performed. And, after the silicon wafer processing is completed, it is also necessary to restore the lower carrier 2 to the first preset height, and restore the upper carrier 1 to the second preset height.

[0060] The height difference between the first preset height and the second preset height is as large as possible from the thickness of the silicon wafer, so as to conveniently place the silicon wafer on the lower supporting platform 2 .

[0061] It should also be noted that the controller controls the upper platform to move in the vertical direction and / or controls the lower platform to move in the vertical direction, including the following three methods: Method 1, the controller controls the upper platform 1 to move in the vertical direction; Method 2: the controller controls the lower platform 2 to move in the vertical direction; Method 3: the controller controls the upper platform 1 and the lower platform 2 to move in the vertical direction. In the case of using the above method 1 to control the movement of the upper platform 1, it can be understood that the lower platform 2 is always at the first preset height, so after the processing of the silicon wafer is completed, it is only necessary to restore the upper platform 1 to the second preset height; in the case of using the above method 2 to control the movement of the lower platform 2, it can be understood that the upper platform 1 is always at the second preset height, so after the processing of the silicon wafer is completed, it is only necessary to restore the lower platform 2 to the first preset height; in the case of using the above method 3 to control the movement of both the upper platform 1 and the lower platform 2, then after the processing of the silicon wafer is completed, it is necessary to restore the lower platform 2 to the first preset height and the upper platform 1 to the second preset height.

[0062] After the silicon wafer is processed, the upper carrier 1 and the lower carrier 2 are reset, which is also convenient for determining the moving distance of the upper carrier and / or the lower carrier.

[0063] In some embodiments, the controller is specifically used to determine the moving distance based on the height difference and the thickness of the silicon wafer, that is, when the lower carrier is at a first preset height and the upper carrier is at a second preset height, the height difference between the first preset height and the second preset height is fixed. At this time, after placing the silicon wafer on top of the lower carrier, the moving distance can be obtained by subtracting the thickness of the silicon wafer from the height difference, and the moving distance is the sum of the distances moved by the upper carrier and / or the lower carrier in the vertical direction.

[0064] Furthermore, the controller is further specifically used for at least one of the following:

[0065] Controlling the upper stage 1 to move downward in the vertical direction by the moving distance, that is, when the controller only controls the upper stage 1 to move in the vertical direction, controlling the upper stage 1 to move downward by the moving distance so that the upper stage 1 contacts the surface of the silicon wafer;

[0066] Controlling the lower carrier to move upward by the moving distance in the vertical direction, that is, when the controller only controls the lower carrier 2 to move in the vertical direction, controlling the lower carrier 2 to move upward by the moving distance so that the lower carrier 2 drives the silicon wafer to move upward, so that the surface of the silicon wafer contacts the upper carrier 1;

[0067] The upper stage 1 is controlled to move downwardly by a first distance in the vertical direction, and the lower stage 2 is controlled to move upwardly by a second distance in the vertical direction, wherein the moving distance is equal to the sum of the first distance and the second distance, that is, when the controller controls the upper stage 1 and the lower stage 2 to move in the vertical direction, the upper stage 1 is controlled to move downwardly by a first distance, and the lower stage 2 is controlled to move upwardly by a second distance, so that the surface of the silicon wafer contacts the upper stage 1. Optionally, the first distance and the second distance are both half of the moving distance.

[0068] Preferably, in order to prevent the silicon wafer from moving up and down and tipping over or falling, in the present embodiment, the controller only controls the upper supporting platform 1 to rise or fall in the vertical direction. Specifically, after the controller obtains the thickness of the silicon wafer, it controls the upper supporting platform 1 to move downward by the above-mentioned moving distance so that the upper supporting platform 1 contacts the surface of the silicon wafer.

[0069] In some embodiments, in order to achieve etching of the edge of the silicon wafer, the size of the first carrying surface of the upper supporting platform 1 facing the silicon wafer is smaller than the size of the upper surface of the silicon wafer; the size of the second carrying surface of the lower supporting platform 2 facing the silicon wafer is smaller than the size of the lower surface of the silicon wafer; the edge of the silicon wafer is exposed through the first carrying surface and the second carrying surface.

[0070] That is, when the controller controls the upper carrier 1 to move in the vertical direction and / or controls the lower carrier 2 to move in the vertical direction according to the thickness of the silicon wafer, so that the distance between the upper carrier 1 and the lower carrier 2 is equal to the thickness of the silicon wafer, the first carrier surface is in contact with the upper surface of the silicon wafer, and the second carrier surface is in contact with the lower surface of the silicon wafer. Moreover, since the size of the first carrier surface is smaller than the size of the upper surface of the silicon wafer and the size of the second carrier surface is smaller than the size of the lower surface of the silicon wafer, the edge area of ​​the silicon wafer between the first carrier surface and the second carrier surface is exposed, thereby etching the exposed edge area of ​​the silicon wafer.

[0071] It should be noted that the upper surface and the lower surface of the silicon wafer are only when the silicon wafer is placed on the lower supporting platform, the surface located on the upper side is the upper surface of the silicon wafer, and the surface located on the lower side is the lower surface of the silicon wafer.

[0072] In some embodiments, the silicon wafer edge etching equipment further includes:

[0073] A nozzle is arranged at the edge of the silicon wafer and is used to spray etching liquid toward the edge of the silicon wafer.

[0074] Wherein, the etching solution may be a liquid containing hydrofluoric acid HF.

[0075] The number of the nozzles is one or more. When the number of the nozzles is multiple, the multiple nozzles are evenly arranged at the edge of the silicon wafer, so that the nozzles evenly spray the etching liquid to the edge of the silicon wafer.

[0076] In some embodiments, in order to ensure the stability of the silicon wafer and facilitate the transportation and movement of the silicon wafer, the lower supporting platform 2 fixes the silicon wafer by vacuum adsorption.

[0077] In some embodiments, the upper carrying platform 1 and the lower carrying platform 2 are coaxially arranged;

[0078] The central axis of the silicon wafer 3 is located on the axis of the upper supporting platform 1 and the lower supporting platform 2 .

[0079] That is, when the silicon wafer 3 is located above the lower supporting platform, the center lines of the upper supporting platform 1, the silicon wafer 3 and the lower supporting platform 2 are located on the same straight line, ensuring that the centers of the upper supporting platform 1, the silicon wafer 3 and the lower supporting platform 2 are aligned, so that the upper supporting platform 1 and the lower supporting platform 2 cover the silicon wafer 3 evenly, and the exposed edge area of ​​the silicon wafer 3 is a uniform ring, ensuring that the edge of the silicon wafer is etched evenly.

[0080] In some embodiments, in order to prevent the etching liquid from entering the internal area that does not need to be etched when the etching liquid is used to etch the edge of the silicon wafer, a sealing ring is provided on the edge of the first bearing surface, and a sealing ring is provided on the edge of the second bearing surface, that is, the sealing ring is used to prevent the etching liquid from flowing into the interior of the silicon wafer surface.

[0081] like Figure 2 As shown, an embodiment of the present invention further provides a silicon wafer edge etching method, which is applied to the silicon wafer edge etching device as described above, and the method comprises:

[0082] Step 201: Obtaining the thickness of the silicon wafer;

[0083] Step 202: placing the silicon wafer on the side of the lower supporting platform facing the upper supporting platform, that is, placing the silicon wafer above the lower supporting platform; wherein the upper supporting platform and the lower supporting platform are arranged opposite to each other in the vertical direction.

[0084] Step 203: Control the upper carrier to move in the vertical direction and / or control the lower carrier to move in the vertical direction according to the thickness, so that the distance between the upper carrier and the lower carrier is equal to the thickness of the silicon wafer.

[0085] Through the above steps, the upper support platform and the surface of the silicon wafer, the lower support platform and the surface of the silicon wafer are just in contact (or called critical contact between the upper support platform and the silicon wafer, the upper support platform will not generate extrusion force on the lower support platform through the silicon wafer), at this time, there will be no excessive pressure between the upper support platform and the silicon wafer, and between the lower support platform and the silicon wafer. By controlling the upper and lower support platforms to move up and down, the pressure between the upper support platform, the lower support platform and the silicon wafer can be better controlled to avoid excessive extrusion force between the upper and lower support platforms and the silicon wafer, so as to prevent the silicon wafer from being fragmented or damaged, and further avoid the impact of the fragments on the silicon wafer edge etching equipment, and avoid the silicon wafer edge etching equipment from shutting down and the high maintenance costs. However, in this case, the silicon wafer can also be fixed by the upper and lower support platforms to prevent the silicon wafer from shifting during the subsequent processing, and the upper support platform can also cover the areas on the upper surface of the silicon wafer that do not need to be etched to avoid etching in these areas that do not need to be etched.

[0086] In some embodiments, obtaining the thickness of the silicon wafer includes:

[0087] Detecting the thickness of the silicon wafer using a thickness detection component;

[0088] Acquire the thickness of the silicon wafer sent by the thickness detection component;

[0089] Wherein, the thickness detection component is arranged on the sides of the upper loading platform and the lower loading platform.

[0090] As an optional implementation, the thickness measurement component uses a capacitance-voltage method to measure the thickness values ​​of multiple measurement points on any one line of the silicon wafer, and takes the average value of the thickness values ​​corresponding to the multiple measurement points as the thickness of the silicon wafer. The thickness of the silicon wafer obtained by the above method is more accurate.

[0091] In some embodiments, before placing the silicon wafer on a side of the lower carrier platform facing the upper carrier platform, the method further includes:

[0092] Controlling the lower carrying platform to be located at a first preset height, and controlling the upper carrying platform to be located at a second preset height;

[0093] The second preset height is higher than the first preset height, and the height difference between the first preset height and the second preset height is greater than the thickness of the silicon wafer.

[0094] That is, before placing the silicon wafer on the lower carrier, or it can be understood that after the silicon wafer edge etching device provided by this embodiment is used to process the previous silicon wafer, the lower carrier is restored to the first preset height, and the upper carrier is restored to the second preset height (also called a reset operation), and then the silicon wafer is placed on the lower carrier, and then the subsequent operation of controlling the upper carrier to move in the vertical direction and / or controlling the lower carrier to move in the vertical direction according to the thickness of the silicon wafer is performed. And, after the silicon wafer processing is completed, it is also necessary to restore the lower carrier to the first preset height, and restore the upper carrier to the second preset height.

[0095] The height difference between the first preset height and the second preset height is as large as possible from the thickness of the silicon wafer, so as to conveniently place the silicon wafer on the lower supporting platform.

[0096] In some embodiments, controlling the upper platform to move in the vertical direction and / or controlling the lower platform to move in the vertical direction according to the thickness includes:

[0097] Determine the moving distance according to the height difference and the thickness of the silicon wafer. Specifically, the moving distance can be obtained by subtracting the thickness of the silicon wafer from the height difference, and the moving distance is the sum of the distances moved by the upper loading platform and / or the lower loading platform in the vertical direction.

[0098] Afterwards, do at least one of the following:

[0099] Controlling the upper carrier to move downwardly by the moving distance in the vertical direction, that is, when only controlling the upper carrier to move in the vertical direction, controlling the upper carrier to move downward by the moving distance so that the upper carrier contacts the surface of the silicon wafer;

[0100] Controlling the lower carrier to move upward by the moving distance in the vertical direction, that is, when only the lower carrier is controlled to move in the vertical direction, controlling the lower carrier to move upward by the moving distance so that the lower carrier drives the silicon wafer to move upward, so that the surface of the silicon wafer contacts the upper carrier;

[0101] The upper carrier is controlled to move downwardly by a first distance in the vertical direction, and the lower carrier is controlled to move upwardly by a second distance in the vertical direction, wherein the moving distance is equal to the sum of the first distance and the second distance, and when both the upper carrier and the lower carrier are controlled to move in the vertical direction, the upper carrier is controlled to move downwardly by the first distance and the lower carrier is controlled to move upwardly by the second distance, so that the surface of the silicon wafer contacts the upper carrier. Optionally, the first distance and the second distance are both half of the moving distance.

[0102] It should be noted that the silicon wafer edge etching method provided in an embodiment of the present invention is applied to the silicon wafer edge etching equipment as described in any one of the above, and all embodiments of the above-mentioned silicon wafer edge etching equipment are applicable to the silicon wafer edge etching method and can achieve the same or similar technical effects.

[0103] The above is a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A silicon wafer edge etching device, characterized in that: include: An upper loading platform and a lower loading platform are arranged opposite to each other in the vertical direction, the silicon wafer is located on a side of the lower loading platform facing the upper loading platform, and the upper loading platform can move in the vertical direction and / or the lower loading platform can move in the vertical direction; A controller is connected to the upper carrier and / or to the lower carrier, and is used to obtain the thickness of the silicon wafer and control the upper carrier to move in the vertical direction and / or control the lower carrier to move in the vertical direction according to the thickness, so that the distance between the upper carrier and the lower carrier is equal to the thickness of the silicon wafer.

2. The silicon wafer edge etching device according to claim 1, characterized in that: Also includes: A thickness detection component, which is disposed on the sides of the upper loading platform and the lower loading platform, and is connected to the controller; The thickness detection component is used to detect the thickness of the silicon wafer and send the thickness of the silicon wafer to the controller.

3. The silicon wafer edge etching device according to claim 1, characterized in that: Before placing the silicon wafer on the side of the lower supporting platform facing the upper supporting platform, the controller is also used to control the lower supporting platform to be located at a first preset height, and to control the upper supporting platform to be located at a second preset height, wherein the second preset height is higher than the first preset height, and the height difference between the first preset height and the second preset height is greater than the thickness of the silicon wafer.

4. The silicon wafer edge etching device according to claim 3, characterized in that: The controller is specifically used to determine the moving distance according to the height difference and the thickness of the silicon wafer; Furthermore, the controller is further specifically used for at least one of the following: Controlling the upper supporting platform to move downward in the vertical direction by the moving distance; Controlling the lower supporting platform to move upward in the vertical direction by the moving distance; The upper supporting platform is controlled to move downward a first distance in the vertical direction, and the lower supporting platform is controlled to move upward a second distance in the vertical direction, wherein the moving distance is equal to the sum of the first distance and the second distance.

5. The silicon wafer edge etching device according to claim 1, characterized in that: The size of the first carrying surface of the upper carrying platform facing the silicon wafer is smaller than the size of the upper surface of the silicon wafer; The size of the second carrying surface of the lower carrying platform facing the silicon wafer is smaller than the size of the lower surface of the silicon wafer; The edge of the silicon wafer is exposed through the first carrying surface and the second carrying surface.

6. The silicon wafer edge etching device according to claim 1, characterized in that: Also includes: A nozzle is arranged at the edge of the silicon wafer and is used to spray etching liquid toward the edge of the silicon wafer.

7. The silicon wafer edge etching device according to claim 1, characterized in that: The lower supporting platform fixes the silicon wafer by vacuum adsorption.

8. The silicon wafer edge etching device according to claim 1, characterized in that: The upper bearing platform and the lower bearing platform are coaxially arranged; The central axis of the silicon wafer is located on the axis of the upper supporting platform and the lower supporting platform.

9. The silicon wafer edge etching device according to claim 5, characterized in that: A sealing ring is provided on the edge of the first bearing surface; A sealing ring is arranged on the edge of the second bearing surface.

10. A silicon wafer edge etching method, characterized in that: Applied to the silicon wafer edge etching equipment according to any one of claims 1 to 9, the method comprising: Get the thickness of the silicon wafer; Placing the silicon wafer on a side of the lower carrier platform facing the upper carrier platform; Controlling the upper platform to move in a vertical direction and / or controlling the lower platform to move in a vertical direction according to the thickness, so that the distance between the upper platform and the lower platform is equal to the thickness of the silicon wafer; Wherein, the upper bearing platform and the lower bearing platform are arranged opposite to each other in the vertical direction.

Images