Method for polishing material and material

Abstract

The present disclosure describes a slurry composition to reduce the roughness of a surface, such as a polycrystalline material comprising silicon carbide, alumina, diamond, and carbon. The present disclosure may also be applied to single crystal materials (e.g., silicon carbide, sapphire, or diamond).

Description

Technical Field

[0001] The present disclosure relates to the field of polishing materials. Background Art

[0002] Chemical mechanical polishing is a process that uses a combination of chemical and mechanical forces to smooth a surface. Summary of the invention

[0003] The present disclosure describes a slurry composition for reducing the roughness of a surface, such as a polycrystalline material including silicon carbide, aluminum oxide, diamond, and carbon. The present disclosure may also be applied to single crystal materials (eg, silicon carbide, sapphire, or diamond).

[0004] Polycrystalline hard materials such as silicon carbide are used in optical applications (e.g., mirrors) and in the fabrication of single crystal silicon carbide substrates for wafer bonding. A key requirement for all of these applications is to achieve sub-nanometer luminosity. Depending on the crystal orientation, the hardness and chemical activity of each grain may be different. For materials containing grains of different crystal orientations (on a micrometer scale), it may be necessary to improve the surface luminosity. Polishing some grains faster than others may result in poor luminosity. In some embodiments, the polishing method includes diamond grinding. However, diamond grinding may take a long time for certain applications and may not meet the surface luminosity requirements. Other chemical mechanical polishing methods may result in poor surface quality. Therefore, there is a need to develop methods for faster and smoother polishing of polycrystalline silicon carbide and similar hard materials.

[0005] The present disclosure relates to a chemical mechanical polishing (CMP) slurry composition based on the use of an oxidizing agent (e.g., an isotropic oxidizing agent) and a combination of particles with a high aspect ratio (e.g., plate-like abrasive particles) combined with diamond (e.g., nanodiamond) to reduce surface roughness. Examples of plate-like particles include kaolin, hydrated alumina, etc. One dimension of the plate-like particles is much thinner than the other two dimensions. The process of the present disclosure can achieve a final roughness of polished silicon carbide in the 4 angstrom to 5 angstrom range (measured on an atomic force microscope), which is 2 times better than some methods.

[0006] In some aspects, the technology described herein relates to a composition comprising: a first particle having a first hardness; and a plurality of second particles having a second hardness and at least partially surrounding the first particle, wherein the second hardness of the plurality of second particles is greater than the first hardness of the first particle, and wherein the aspect ratio of the first particle is in a range from 2:1 to 1,000,000:1.

[0007] In some aspects, the technology described herein relates to a composition wherein a first dimension of the first particle is less than a second dimension of the first particle and a third dimension of the first particle.

[0008] In some aspects, the technology described herein relates to a composition wherein the first particle comprises kaolin, gibbsite, aluminum bromide, aluminum oxide, quartz, boron carbide, boron nitride, boron hydride, silicon carbide, titanium oxide, boehmite, mica, magnesium hydroxide, or a combination thereof.

[0009] In some aspects, the technology described herein relates to a composition wherein the second particles comprise diamond, silicon carbide, boron carbide, boron nitride, boron hydride, aluminum bromide, or any combination thereof.

[0010] In some aspects, the technology described herein relates to a composition wherein the diamond comprises an average particle size of less than 2 microns, less than 1 micron, or less than 500 nanometers.

[0011] In some aspects, the technology described herein relates to a composition wherein the second particles comprise greater than 2000 kg / mm 2 The particle hardness.

[0012] In some aspects, the technology described herein relates to a composition wherein the pH of the composition is in the range of from 1 to 13.

[0013] In some aspects, the technology described herein relates to a composition wherein the pH of the composition ranges from 1 to 3 or 11 to 13.

[0014] In some aspects, the technology described herein relates to a composition further comprising an oxidizing agent.

[0015] In some aspects, the technology described herein relates to a composition wherein the oxidizing agent is an isotropic oxidizing agent.

[0016] In some aspects, the technology described herein relates to a composition wherein the first particle is rod-shaped or plate-shaped.

[0017] In some aspects, the technology described herein relates to a composition wherein the first particles are rod-like in shape, and wherein the aspect ratio of the first particles is greater than 1 or greater than 2.5.

[0018] In some aspects, the technology described herein relates to a composition wherein the first particles are plate-like in shape, and wherein the aspect ratio of the first particles is greater than 10 or greater than 50.

[0019] In some aspects, the technology described herein relates to a composition, wherein the composition is a slurry.

[0020] In some aspects, the technology described herein relates to a method of using a slurry, comprising: applying the slurry to a substrate, wherein the slurry includes first particles having a first hardness; and a plurality of second particles having a second hardness and at least partially surrounding the first particles, wherein the second hardness of the plurality of second particles is greater than the first hardness of the first particles, and wherein an aspect ratio of the first particles is in a range from 2:1 to 1,000,000:1; and polishing the substrate using the slurry until the roughness of the substrate is less than 7 angstroms.

[0021] In some aspects, the technology described herein relates to a method wherein a first dimension of the first particle is less than a second dimension of the first particle and a third dimension of the first particle.

[0022] In some aspects, the technology described herein relates to a method wherein the first particle comprises kaolin, gibbsite, aluminum bromide, aluminum oxide, quartz, boron carbide, boron nitride, boron hydride, silicon carbide, titanium oxide, boehmite, mica, magnesium hydroxide, or a combination thereof.

[0023] In some aspects, the technology described herein relates to a method wherein the second particle comprises diamond, silicon carbide, boron carbide, boron nitride, boron hydride, aluminum bromide, or any combination thereof.

[0024] In some aspects, the technology described herein relates to a method wherein the diamond comprises an average grain size of less than 2 microns, less than 1 micron, or less than 500 nanometers.

[0025] In some aspects, the technology described herein relates to a method wherein the second particles comprise greater than 2000 kg / mm 2 The particle hardness.

[0026] In some aspects, the technology described herein relates to a method wherein the pH of the slurry is in the range from 1 to 13.

[0027] In some aspects, the technology described herein relates to a method further comprising an oxidizing reagent.

[0028] In some aspects, the technology described herein relates to a method wherein the oxidizing agent is an isotropic oxidizing agent.

[0029] In some aspects, the technology described herein relates to a method wherein the first particle is rod-shaped or plate-shaped.

[0030] In some aspects, the technology described herein relates to a method, wherein the first particle is rod-like in shape, and wherein the aspect ratio of the first particle is greater than 1 or greater than 2.5.

[0031] In some aspects, the technology described herein relates to a method wherein the first particle is plate-like in shape, and wherein the aspect ratio of the first particle is greater than 10 or greater than 50.

[0032] In some aspects, the technology described herein relates to a method, wherein the slurry is a first slurry, the method further comprising applying a second slurry to the substrate before applying the first slurry.

[0033] In some aspects, the technology described herein relates to a method wherein polishing the substrate with the slurry includes polishing until the roughness of the substrate is less than 5 angstroms. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Some embodiments of the present disclosure are described herein by way of example only and with reference to the accompanying drawings. With specific reference now to the drawings in detail, it should be emphasized that the embodiments are shown by way of example and for the purpose of illustrating and illustrative discussion of the embodiments of the present disclosure. In this regard, the description together with the drawings makes it clear to those skilled in the art how the disclosed embodiments may be practiced.

[0035] Figure 1 A system having a slurry comprising a mixture of particles defined by first particles and a plurality of second particles at least partially surrounding the first particles is depicted.

[0036] Figure 2 An exemplary flow chart is shown according to some embodiments of a method for polishing a material, such as a substrate such as a silicon carbide substrate.

[0037] Figure 3A Shown is the polished surface of a nanodiamond based slurry with spherical soft core particles.

[0038] Figure 3B Shown is the polished surface of a nanodiamond based slurry with rod-shaped soft core particles.

[0039] Figure 3C Shown is the polished surface of a nanodiamond based slurry with plate-like soft core particles. DETAILED DESCRIPTION

[0040] Among those benefits and improvements disclosed, other objects and advantages of the present disclosure will become apparent from the following description made in conjunction with the accompanying drawings. Detailed embodiments of the present disclosure are disclosed herein; however, it should be understood that the disclosed embodiments are merely illustrative of the present disclosure that can be embodied in various forms. In addition, each of the examples given with respect to the various embodiments of the present disclosure is intended to be illustrative and not restrictive.

[0041] All prior patents and publications referenced herein are incorporated by reference in their entirety.

[0042] Throughout the specification and claims, unless the context clearly dictates otherwise, the following terms take the meanings explicitly associated herein. As used herein, the phrases "in one embodiment," "in an embodiment," and "in some embodiments" do not necessarily refer to the same embodiment, although they may refer to the same embodiment. In addition, as used herein, the phrases "in another embodiment" and "in some other embodiments" do not necessarily refer to different embodiments, although they may refer to different embodiments. All embodiments of the present disclosure are intended to be combinable without departing from the scope or spirit of the present disclosure.

[0043] As used herein, the term "based on" is not exclusive and allows for being based on additional factors not described, unless the context clearly dictates otherwise. Additionally, throughout this specification, the meanings of "a," "an," and "the" include plural references. The meaning of "in..." includes "in..." and "on...".

[0044] As used herein, the term "between" does not necessarily need to be placed directly adjacent to other elements. Generally, this term means a configuration in which something is sandwiched between two or more other things. At the same time, the term "between" can describe that something is directly adjacent to two opposing things. Therefore, in any one or more of the embodiments disclosed herein, a specific structural component placed between two other structural elements can be:

[0045] Directly disposed between two other structural elements, such that the particular structural component is in direct contact with both of the two other structural elements;

[0046] being positioned in direct proximity to only one of the two other structural elements such that the particular structural component is in direct contact with only one of the two other structural elements;

[0047] being disposed in indirect proximity to only one of the two other structural elements, such that the particular structural component is not in direct contact with only one of the two other structural elements, and there is another element juxtaposed with the particular structural component and the one of the two other structural elements;

[0048] indirectly disposed between two other structural elements, such that a particular structural component is not in direct contact with both other structural elements, and other features may be disposed therebetween; or

[0049] Any combination thereof.

[0050] As used herein, "embedded" means that a first material is distributed throughout a second material.

[0051] As used herein, "slurry" means a semifluid mixture, such as fine particles suspended in water.

[0052] Figure 1 A system 100 is depicted having a slurry 110 comprising a mixture of particles defined by first particles 112 and a plurality of second particles 114 at least partially surrounding the first particles 112. In some embodiments, the slurry is applied to a substrate 120. In some embodiments, the substrate 120 comprises a plurality of grains, the plurality of grains comprising a first grain 120A and a second grain 120B. The method of the present disclosure comprises polishing the substrate 120 with the slurry 110 until the roughness of the substrate 120 meets a predetermined roughness threshold. For example, the predetermined threshold may be a surface having a surface finish of less than 7 angstroms on an atomic force microscope (AFM) 5×5 μm scan and an optical profiler.

[0053] In some embodiments, the substrate 120 may have grain isotropy. For example, the substrate 120 may have anisotropic hardness with different orientations and anisotropic chemical reactivity. For example, the first grain 120A may be polished at a different rate than the second grain 120B. In some embodiments, the substrate 120 will have poor surface finish (roughness) due to anisotropic polishing. The present disclosure is intended to achieve a surface with a surface finish of less than 5 angstroms on an atomic force microscope (AFM) 5×5 μm scan and an optical profiler.

[0054] In some examples, a slurry of particles (e.g., diamond particles, including nano-diamond particles) is coated on larger spherical soft particles. This slurry provides a high removal rate and a surface finish of up to 10 angstroms during polishing. In contrast, the present disclosure uses first particles 112 with a high aspect ratio (e.g., plate-like or rod-like structure particles) as soft core particles for diamond coating. The disclosed structure will polish anisotropic grains (i.e., with respect to structures having large spherical particles) more uniformly and can provide a surface finish of up to 3 to 5 angstroms.

[0055] In some embodiments, the slurry 110 includes a liquid in which the first particles 112 and the second particles 114 are dispersed. The liquid may be a water-based solvent including an organic solvent such as alcohol or glycerin.

[0056] In some embodiments, the first particles 112 are kaolin, gibbsite, aluminum bromide (AlBr 3 ), alumina (alumina, aluminum oxide, Al 2 O 3 )), quartz, boron carbide (B 4 C), boron nitride (BN), boron hydride (B 2 H 6 ), silicon dioxide (SiO 2 ), silicon carbide (SiC), titanium oxide, boehmite, mica, magnesium hydroxide (Mg(OH) 2 ), zirconium oxide, cerium oxide or a combination thereof.

[0057] In some embodiments, kaolin is Al 2 Si 2 O 5 (OH) 4 In some embodiments, gibbsite may be referred to as Al(OH) 3 ,γ-Al(OH) 3 and / or α-Al(OH) 3 In some embodiments, quartz is silicon dioxide (SiO 2 In some embodiments, titanium oxide is also referred to as titanium oxide (TiO 2 In some embodiments, boehmite is referred to as diaspore (γ-AlO(OH)). In some embodiments, mica X may be imparted 2 Y 4–6 Z 8 O 20 (OH,F) 4 The general chemical formula is: wherein X is K, Na or Ca or less commonly Ba, Rb or Cs; Y is Al, Mg or Fe or less commonly Mn, Cr, Ti, Li, etc.; Z is primarily Si or Al, but may also include Fe 3+ Or Ti.

[0058] In some embodiments, the second particles 114 are diamond (e.g., nanodiamond), silicon carbide, boron carbide, boron nitride, boron hydride, aluminum bromide, or any combination thereof. In some embodiments, the diamond has an average particle size of less than 5 microns, less than 4 microns, less than 3 microns, less than 2 microns, less than 1 micron, less than 500 nanometers, from 5 microns to 10 nanometers, from 4 microns to 10 nanometers, from 3 microns to 10 nanometers, from 2 microns to 10 nanometers, from 1 micron to 10 nanometers, from 500 nanometers to 10 nanometers, from 5 microns to 500 nanometers, from 5 microns to 1 micron, from 5 microns to 2 microns, from 5 microns to 3 microns, or from 5 microns to 4 microns. In some embodiments, the average particle size is measured by dynamic light scattering and sieving.

[0059] The first particle 112 has a first hardness. The second particle 114 has a second hardness. The particle hardness is determined by a Vickers hardness test. The second hardness of the second particle 114 is greater than the first hardness of the first particle 112. In some embodiments, the second particle 114 has a hardness greater than 1500 kg / mm 2 , greater than 2000kg / mm 2 The particle hardness.

[0060] The combination of the first particles 112 and the second particles 114 may be selected based on the hardness ratio between the first particles 112 and the second particles 114. The selection of the first particles 112 may depend on what the second particles 114 are. Similarly, the selection of the second particles 114 may depend on what the first particles 112 are. For example, if the first particles 112 are silicon dioxide, the second particles 114 may be aluminum oxide. For example, if the second particles 114 are diamond particles, the first particles 112 may be aluminum oxide, silicon carbide, and / or silicon dioxide particles. For example, the first particles 112 may be aluminum oxide or silicon dioxide, and the second particles 114 may be boron nitride. For example, the first particles 112 may be zirconium oxide, and the second particles 114 may be diamond. For example, the first particles 112 may be silicon dioxide, and the second particles 114 may be silicon carbide. The second particles 114 on the first particles 112 may be attached by physically bonding together by a difference in electrostatic charge.

[0061] The selection of the first particles 112 and the second particles 114 also depends on the substrate 120 to be polished. For example, the substrate 120 can be silicon carbide, sapphire, diamond, aluminum oxynitride, diamond, (AlON), quartz, gallium nitride, zirconium oxide, and other oxides. The substrate 120 material can be single crystalline or polycrystalline. The substrate 120 material can have more than one crystalline phase.

[0062] For the chemical aspect of chemical mechanical polishing, the slurry 110 may further include an oxidizing agent on the first particles 112 and the second particles 114. In some embodiments, the oxidizing agent is an isotropic oxidizing agent. Examples of isotropic oxidizing agents include percompounds, such as permanganates, peroxides, perchlorates, perborates, periodates, etc. Examples of isotropic oxidizing agents also include peroxy compounds, such as peroxychromates, peroxymonosulfates, peroxydisulfates, etc.

[0063] In some embodiments, the slurry 110 may include additives such as ions, alkali metals, pH modifiers, pH buffers, corrosion inhibitors, dispersants, anti-settling agents, or other additives. In some embodiments, the pH of the slurry is predetermined. The pH of the slurry may be in a range from 1 to 13. In some embodiments, the pH of the composition is in a range from 1 to 3 or 11 to 13. For example, the pH of the slurry 110 may be determined based on the material of the substrate 120. For example, when the substrate 120 is sapphire aluminum oxide, the pH of the slurry 110 may be greater than 12. In some examples, when the substrate 120 is silicon carbide, the pH of the slurry 110 may be less than 3 or greater than 12.

[0064] In some embodiments, the aspect ratio of the first particles 112 can be in the following ranges: from 2:1 to 1,000,000:1, from 50,000:1 to 1,000,000:1, from 100,000 to 1,000,000:1, from 150,000 to 1,000,000:1, from 200,000 to 1,000,000:1, from 250,000 to 1,000,000:1, from 300,000 to 1,000,000:1, from 350,000 to 1,000,000:1, 1,000 to 1,000,000:1, from 400,000 to 1,000,000:1, from 450,000 to 1,000,000:1, from 500,000 to 1,000,000:1, from 550,000 to 1,000,000:1, from 600,000 to 1,000,000:1, from 650,000 to 1,000,000:1, from 700,000 to 1,000,000:1, from 750,000 to 1,000, 000:1, from 800,000 to 1,000,000:1, from 850,000 to 1,000,000:1, from 900,000 to 1,000,000:1, from 950,000 to 1,000,000:1, 2:1 to 950,000:1, 2:1 to 900,000:1, 2:1 to 850,000:1, 2:1 to 800,000:1, 2:1 to 750,000:1, 2:1 to 700,000:1, 2:1 to 650,000:1, 2:1 to 600,000:1, 2:1 to 550,000:1, 2:1 to 500,000:1, 2:1 to 450,000:1, 2:1 to 400,000:1, 2:1 to 350,000:1, 2:1 to 300,000:1, 2:1 to 250,000:1, 2:1 to 200,000:1, 2:1 to 150,000:1, 2:1 to 100,000:1 or 2:1 to 50,000:1.

[0065] In some embodiments, the first dimension of the first particle 112 is less than the second dimension of the first particle 112 and the third dimension of the first particle 112. In some embodiments, the first particle 112 may be rod-shaped. Rod-shaped may be defined as a two-dimensional particle having an aspect ratio greater than 0.5, greater than 1, greater than 1.5, greater than 2, greater than 2.5, greater than 3, or greater than 3.5. In some embodiments, the first particle 112 may be plate-shaped. Plate-shaped may be defined as a two-dimensional particle having an aspect ratio greater than 10, greater than 20, greater than 30, greater than 40, greater than 50, or greater than 60.

[0066] In some embodiments, the first particles 112 and the second particles 114 may also be selected based on their crystal structures. In some embodiments, the crystal structures of the first particles 112 and the second particles 114 may be monoclinic, triclinic, and / or hexagonal.

[0067] Figure 2 An exemplary flow chart according to some embodiments of a method for polishing a material, such as a substrate such as a silicon carbide substrate, is shown. The slurry can be any of the embodiments described herein. The method 200 includes applying 210 the slurry to the substrate. The method 200 includes polishing 220 the substrate with the slurry until the roughness of the substrate is less than 7 angstroms.

[0068] Example

[0069] Example 1

[0070] Figure 3A The polished surface of a nanodiamond based slurry with spherical soft core particles is shown. The removal rate is approximately 12 μm / hr. The resulting surface finish is approximately 10 Angstroms.

[0071] Example 2

[0072] Figure 3B The polished surface of a nanodiamond based slurry with rod-shaped soft core particles is shown. The removal rate is approximately 4 μm / hr. The resulting surface finish is approximately 3 Angstroms.

[0073] Example 3

[0074] Figure 3C The polished surface of a nanodiamond based slurry with plate-like soft core particles is shown. The removal rate is approximately 5 μm / hr. The resulting surface finish is approximately 4 Angstroms.

[0075] aspect

[0076] Various aspects are described below. It should be understood that any one or more of the features recited in the following aspects may be combined with any one or more other aspects.

[0077] Aspect 1. A composition comprising: a first particle having a first hardness; and a plurality of second particles having a second hardness and at least partially surrounding the first particle, wherein the second hardness of the plurality of second particles is greater than the first hardness of the first particle, and wherein the aspect ratio of the first particle is in the range from 2:1 to 1,000,000:1.

[0078] Aspect 2. The composition according to aspect 1, wherein the first dimension length of the first particle is smaller than the second dimension length of the first particle and the third dimension length of the first particle.

[0079] Aspect 3. The composition according to aspect 1 or aspect 2, wherein the first particles comprise kaolin, gibbsite, aluminum bromide, aluminum oxide, quartz, boron carbide, boron nitride, boron hydride, silicon carbide, titanium oxide, boehmite, mica, magnesium hydroxide, or a combination thereof.

[0080] Aspect 4. The composition according to any of the preceding aspects, wherein the second particles comprise diamond, silicon carbide, boron carbide, boron nitride, boron hydride, aluminum bromide, or any combination thereof.

[0081] Aspect 5. The composition of aspect 4, wherein the diamond comprises an average particle size of less than 2 microns, less than 1 micron, or less than 500 nanometers.

[0082] Aspect 6. The composition according to aspect 4, wherein the second particles comprise greater than 2000 kg / mm 2 The particle hardness.

[0083] Aspect 7. The composition according to any one of the preceding aspects, wherein the pH of the composition is in the range from 1 to 13.

[0084] Aspect 8. The composition according to any one of the preceding aspects, wherein the pH of the composition is in the range from 1 to 3 or 11 to 13.

[0085] Aspect 9. The composition according to any of the preceding aspects, further comprising an oxidizing agent.

[0086] Aspect 10. The composition according to aspect 9, wherein the oxidizing agent is an isotropic oxidizing agent.

[0087] Aspect 11. The composition according to any one of the preceding aspects, wherein the first particles are rod-like or plate-like in shape.

[0088] Aspect 12. The composition of aspect 11, wherein the first particles are rod-like in shape, and wherein the aspect ratio of the first particles is greater than 1 or greater than 2.5.

[0089] Aspect 13. The composition of aspect 11, wherein the first particles are plate-like in shape, and wherein the aspect ratio of the first particles is greater than 10 or greater than 50.

[0090] Aspect 14. The composition according to any of the preceding aspects, wherein the composition is a slurry.

[0091] Aspect 15. A method of using a slurry, comprising: applying the slurry to a substrate, wherein the slurry comprises first particles having a first hardness; and a plurality of second particles having a second hardness and at least partially surrounding the first particles, wherein the second hardness of the plurality of second particles is greater than the first hardness of the first particles, and wherein an aspect ratio of the first particles is in a range from 2:1 to 1,000,000:1; and polishing the substrate using the slurry until the roughness of the substrate is less than 7 angstroms.

[0092] Aspect 16. The method according to aspect 15, wherein the first dimension length of the first particle is smaller than the second dimension length of the first particle and the third dimension length of the first particle.

[0093] Aspect 17. The method according to aspect 15 or aspect 16, wherein the first particles include kaolin, gibbsite, aluminum bromide, aluminum oxide, quartz, boron carbide, boron nitride, boron hydride, silicon carbide, titanium oxide, boehmite, mica, magnesium hydroxide, or a combination thereof.

[0094] Aspect 18. The method according to any of the preceding aspects, wherein the second particles comprise diamond, silicon carbide, boron carbide, boron nitride, boron hydride, aluminum bromide, or any combination thereof.

[0095] Aspect 19. The method of aspect 18, wherein the diamond comprises an average grain size of less than 2 microns, less than 1 micron, or less than 500 nanometers.

[0096] Aspect 20. The method according to aspect 18, wherein the second particles comprise greater than 2000 kg / mm 2 The particle hardness.

[0097] Aspect 21. The method according to any of the preceding aspects, wherein the pH of the slurry is in the range from 1 to 13.

[0098] Aspect 22. The method according to any of the preceding aspects, further comprising an oxidizing agent.

[0099] Aspect 23. The method according to aspect 22, wherein the oxidizing agent is an isotropic oxidizing agent.

[0100] Aspect 24. The method according to any one of the preceding aspects, wherein the first particles are rod-shaped or plate-shaped.

[0101] Aspect 25. The method according to aspect 24, wherein the first particles are rod-shaped, and wherein the aspect ratio of the first particles is greater than 1 or greater than 2.5.

[0102] Aspect 26. The method according to aspect 24, wherein the first particles are plate-like in shape, and wherein the aspect ratio of the first particles is greater than 10 or greater than 50.

[0103] Aspect 27. The method according to any one of the preceding aspects, wherein the slurry is a first slurry, the method further comprising: applying a second slurry to the substrate before applying the first slurry.

[0104] Aspect 28. The method according to any one of the preceding aspects, wherein polishing the substrate using the slurry comprises polishing until the roughness of the substrate is less than 5 angstroms.

[0105] It is to be understood that changes may be made in detail, especially as to the materials of construction employed and the shapes, sizes and arrangements of parts, without departing from the scope of the present disclosure. The specification and described embodiments are examples, with the true scope and spirit of the present disclosure being indicated by the following claims.

Claims

1. A composition comprising: a first particle having a first hardness; and a plurality of second particles having a second hardness and at least partially surrounding the first particles, wherein the second hardness of the plurality of second particles is greater than the first hardness of the first particles, and wherein an aspect ratio of the first particles is in a range from 2:1 to 1,000,000:

1. 2 . The composition of claim 1 , wherein the first dimension of the first particle is smaller than the second dimension of the first particle and the third dimension of the first particle.

3. The composition of claim 1, wherein the first particles comprise kaolin, gibbsite, aluminum bromide, aluminum oxide, quartz, boron carbide, boron nitride, boron hydride, silicon carbide, titanium oxide, boehmite, mica, magnesium hydroxide, or a combination thereof.

4. The composition of claim 1, wherein the second particles comprise diamond, silicon carbide, boron carbide, boron nitride, boron hydride, aluminum bromide, or any combination thereof.

5. The composition of claim 4, wherein the diamond comprises an average particle size of less than 2 microns, less than 1 micron, or less than 500 nanometers.

6. The composition of claim 4, wherein the second particles comprise greater than 2000 kg / mm 2 The particle hardness.

7. The composition according to claim 1, wherein the pH of the composition is in the range of from 1 to 13.

8. The composition of claim 1, wherein the pH of the composition is in the range of from 1 to 3 or 11 to 13.

9. The composition of claim 1, further comprising an oxidizing agent.

10. The composition of claim 9, wherein the oxidizing agent is an isotropic oxidizing agent. The composition according to claim 1 , wherein the first particles are rod-shaped or plate-shaped.

12. The composition according to claim 11, wherein the first particle is rod-shaped, and The aspect ratio of the first particles is greater than 1 or greater than 2.

5.

13. The composition according to claim 11, wherein the first particles are plate-like in shape, and The aspect ratio of the first particles is greater than 10 or greater than 50.

14. The composition of claim 1, wherein the composition is a slurry.

15. A method of using a slurry, comprising: Applying the slurry to a substrate, wherein the slurry comprises a first particle having a first hardness; and a plurality of second particles having a second hardness and at least partially surrounding the first particles, wherein the second hardness of the plurality of second particles is greater than the first hardness of the first particles, and wherein the aspect ratio of the first particles is in the range of from 2:1 to 1,000,000:1; and The substrate is polished using the slurry until the roughness of the substrate is less than 7 angstroms. 16 . The method of claim 15 , wherein a first dimension of the first particle is smaller than a second dimension of the first particle and a third dimension of the first particle.

17. The method of claim 15, wherein the first particles comprise kaolin, gibbsite, aluminum bromide, aluminum oxide, quartz, boron carbide, boron nitride, boron hydride, silicon carbide, titanium oxide, boehmite, mica, magnesium hydroxide, or a combination thereof.

18. The method of claim 15, wherein the second particles comprise diamond, silicon carbide, boron carbide, boron nitride, boron hydride, aluminum bromide, or any combination thereof.

19. The method of claim 18, wherein the diamond comprises an average grain size of less than 2 microns, less than 1 micron, or less than 500 nanometers.

20. The method of claim 18, wherein the second particles comprise greater than 2000 kg / mm 2 The particle hardness.

21. The method of claim 15, wherein the pH of the slurry is in the range of from 1 to 13.

22. The method of claim 15, further comprising an oxidizing agent.

23. The method of claim 22, wherein the oxidizing agent is an isotropic oxidizing agent.

24. The method of claim 15, wherein the first particles are rod-shaped or plate-shaped.

25. The method according to claim 24, wherein the first particle is rod-shaped, and The aspect ratio of the first particles is greater than 1 or greater than 2.

5.

26. The method according to claim 24, wherein the first particles are plate-like in shape, and The aspect ratio of the first particles is greater than 10 or greater than 50.

27. The method of claim 15, wherein the slurry is a first slurry, the method further comprising: A second slurry is applied to the substrate prior to applying the first slurry.

28. The method of claim 15, wherein polishing the substrate with the slurry comprises polishing until the roughness of the substrate is less than 5 angstroms.

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