Plasma apparatus and method for processing feed material with upstream vortex module and composite gas stream

Abstract

Disclosed herein are systems, methods, and apparatus for treating a feed material using an upstream vortex module and a composite gas stream. Some embodiments relate to a microwave plasma apparatus for processing a material, comprising: a first flow module, a second flow module, and a liner; a first vortex module in communication with the second flow module, the first vortex module including one or more first gas inlets configured to generate a first vortex gas flow toward the second vortex module; the second vortex module includes one or more second gas inlets configured to generate a second vortex gas flow toward the liner, where the first vortex module and the second vortex module are configured such that the first vortex gas flow and the second vortex gas flow combine into a composite gas flow before entering the liner.

Description

[0001] Incorporation by reference of any priority application

[0002] This application claims the benefit of priority under 35 U.S.C. §119(e) to U.S. Provisional Application No. 63 / 350,746, filed on June 9, 2022, the entire disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The present invention relates to apparatus and methods for plasma material processing, and more particularly to apparatus and methods for microwave plasma material processing. Background Art

[0004] Plasma torches generate and provide high-temperature directional plasma streams for a variety of purposes. The two main types of plasma torches are induction plasma torches and microwave plasma torches. In general, induction plasmas have the problem of plasma inhomogeneity. This inhomogeneity leads to limitations in the ability of induction plasmas to process certain materials. In addition, there are significant differences between microwave plasma devices and other plasma generating torches (such as induction plasmas). For example, microwave plasmas have higher temperatures inside the plasma plume, while induction plasmas have higher temperatures outside the plume. In particular, the outer region of an induction plasma can reach about 10,000K, while the inner processing region can only reach about 1,000K. This large temperature difference leads to material handling and feeding problems. In addition, induction plasma devices cannot process raw materials at temperatures low enough to avoid melting of certain feed materials without extinguishing the plasma.

[0005] Conventional microwave plasma devices for processing materials include a plasma chamber, a microwave radiation source, and a waveguide that guides the microwave radiation from the microwave radiation source to the plasma chamber. A process gas flows through the plasma chamber, and the microwave radiation is coupled to the process gas to produce a plasma jet. Process material is introduced into the plasma chamber, becomes entrained in the plasma jet, and is thereby converted into a stream of product material droplets or particles.

[0006] The plasma jet can be stabilized within the plasma chamber by contact with the swirling gas flow. Stabilizing the plasma jet prevents it from contacting the plasma chamber and thereby enables the use of conventional refractory materials to control the extremely high temperature of the plasma. Summary of the invention

[0007] For the purposes of this summary of the invention, certain aspects, advantages and novel features of the present invention are described herein. It should be understood that not all such advantages are necessarily achievable according to any particular embodiment of the present invention. Thus, for example, one skilled in the art will recognize that the present invention may be implemented or performed in a manner that achieves one advantage or group of advantages as taught herein without achieving other advantages as may be taught or suggested herein.

[0008] Some embodiments herein relate to a microwave plasma device for processing materials, comprising: a first flow module, a second flow module and a liner; a first vortex module connected to the second flow module, the first vortex module comprising a plurality of first gas inlets, the plurality of first gas inlets being configured to generate a first vortex gas flow toward the second vortex module; and a second vortex module, the second vortex module comprising a plurality of second gas inlets, the plurality of second gas inlets being configured to generate a second vortex gas flow toward the liner, wherein the first vortex module and the second vortex module are configured so that the first vortex gas flow and the second vortex gas flow are combined into a composite gas flow before entering the liner.

[0009] In some embodiments, the microwave plasma device further comprises a microwave power source, the microwave power source being in communication with the composite gas stream and being configured to provide microwave radiation to generate a microwave plasma when in contact with the composite gas stream. In some embodiments, the microwave power source provides microwave radiation of at least 70 KW.

[0010] In some embodiments, the microwave plasma device further includes one or more feed material inlets in communication with the first flow module, the second flow module, or the liner, the one or more feed material inlets being configured to provide feed material to the microwave plasma.

[0011] In some embodiments, the plurality of first gas inlets are configured to generate a first vortex gas flow in a counterclockwise direction. In some embodiments, the plurality of second gas inlets are configured to generate a second vortex gas flow in a counterclockwise direction. In some embodiments, the plurality of gas inlets are configured to generate a second vortex gas flow in a clockwise direction. In some embodiments, the plurality of first gas inlets are configured to generate a first vortex gas flow in a clockwise direction. In some embodiments, the plurality of second gas inlets are configured to generate a second vortex gas flow in a counterclockwise direction. In some embodiments, the plurality of second gas inlets are configured to generate a second vortex gas flow in a clockwise direction.

[0012] In some embodiments, the plurality of first gas inlets comprises 2 inlets. In some embodiments, the plurality of second gas inlets comprises 2 inlets. In some embodiments, the plurality of first gas inlets comprises more than 2 inlets. In some embodiments, the plurality of second gas inlets comprises more than 2 inlets.

[0013] In some embodiments, at least one first gas inlet of the plurality of first gas inlets is oriented at an angle between 0° and 90° relative to at least another first gas inlet of the plurality of first gas inlets. In some embodiments, at least one second gas inlet of the plurality of second gas inlets is oriented at an angle between 0° and 90° relative to at least another second gas inlet of the plurality of second gas inlets.

[0014] In some embodiments, wherein the first swirling gas stream comprises ionized gas, in some embodiments, the plurality of first gas inlets comprise an inlet diameter between about .335 inches and about .393 inches, in some embodiments, the plurality of second gas inlets comprise an inlet diameter between about .0161 inches and about .0345 inches.

[0015] In some embodiments, the first flow module, the second flow module, and the liner are further configured to direct the composite gas flow to the reaction chamber downstream of the liner. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings are provided to illustrate exemplary embodiments and are not intended to limit the scope of the present disclosure. A better understanding of the systems and methods described herein will be obtained by referring to the following description in conjunction with the accompanying drawings, wherein:

[0017] Figure 1 An exemplary microwave plasma torch 100 that may be used to process feed material is illustrated.

[0018] Figure 2A-2B An exemplary microwave plasma torch is shown including a side feed hopper, thus allowing downstream feeding.

[0019] Figure 3 Another exemplary plasma apparatus for processing feed material is shown.

[0020] Figure 4 An exemplary core flow module of a plasma apparatus for processing feed material is illustrated.

[0021] Figure 5 An exemplary microwave plasma processing apparatus according to some embodiments herein is illustrated.

[0022] Figure 6 Illustrated are exemplary core vortex flow modules and vortex flow modules for generating counter-clockwise flow according to some embodiments herein.

[0023] Figure 7 An exemplary swirl gas inlet configuration for generating a counter-clockwise swirl gas flow is illustrated according to some embodiments herein.

[0024] Figure 8An example of the concept of angle and offset relative to the jet is illustrated. DETAILED DESCRIPTION

[0025] Although certain preferred embodiments and examples are disclosed below, the subject matter of the present invention extends beyond the specifically disclosed embodiments to other alternative embodiments and / or uses and modifications and equivalents thereof. Therefore, the scope of the claims attached hereto or presented in the future is not limited to any specific embodiment described below. For example, in any method or process disclosed herein, the actions or operations of the method or process can be implemented in any suitable order and are not necessarily limited to any specific disclosed order. Various operations can be described as multiple discrete operations in sequence in a manner that helps to understand certain embodiments; however, the description order should not be interpreted as implying that these operations are order-dependent. In addition, the structures, systems and / or devices described herein can be implemented as integrated components or separate components. For the purpose of comparing various embodiments, certain aspects and advantages of these embodiments are described. Not all such aspects or advantages are necessarily implemented by any particular embodiment. Therefore, for example, various embodiments can be performed in the following manner: realizing or optimizing an advantage or group of advantages as taught herein without realizing other aspects or advantages as may also be taught or suggested herein.

[0026] Certain exemplary embodiments will now be described to provide a comprehensive understanding of the principles of structure, function, manufacture, and use of the apparatus and methods disclosed herein. One or more examples of these embodiments are illustrated in the accompanying drawings. It will be understood by those skilled in the art that the apparatus and methods specifically described herein and illustrated in the accompanying drawings are non-limiting exemplary embodiments, and that the scope of the invention is limited only by the claims. Features illustrated or described in conjunction with an exemplary embodiment may be combined with features of other embodiments. Such modifications and variations are intended to be included within the scope of the present technology.

[0027] In some embodiments, the plasma of a microwave plasma device can be stabilized and centered by a vortex gas flow. For example, a small vortex orifice nozzle may be present in the device to inject a vortex gas. The high speed and vortex action of this vortex gas flow protect the inner diameter of the torch from the high heat associated with the plasma. The annular vortex chamber may be connected to the internal fluid of the plasma device via a plurality of vortex nozzles. The vortex nozzles may be arranged at any angle relative to the core gas flow of the device. For example, the vortex nozzles may be arranged approximately perpendicular to the main axis and the core gas flow, and approximately offset from the main axis and the core gas flow. However, in some embodiments, the vortex nozzles may also be arranged at an angle relative to the axis and the core gas flow.

[0028] In some embodiments, the plasma generated by the microwave plasma torch can reach extremely high temperatures, about six thousand Kelvin (6,000K). As such, in some embodiments, a swirl gas can be supplied to the inner surface of the torch before igniting the plasma jet. The swirl gas can be supplied from a swirl gas source through a swirl nozzle so as to establish a swirl gas flow in a swirl or spiral manner between the core gas flow and the inner surface. After igniting the plasma, the swirl flow of the vortex prevents the plasma jet from adhering to the inner surface, and thereby prevents the plasma chamber from melting by conductive heat transfer between the plasma and the inner surface. The swirl gas also removes a portion of the heat transferred from the plasma to the inner surface by radiation.

[0029] Figure 1 An exemplary microwave plasma torch 100 that can be used to produce a material is illustrated. In some embodiments, a feedstock can be introduced into a microwave plasma 104 via one or more feedstock inlets 102. In some embodiments, an entrained gas flow and / or a sheath flow can be injected into a microwave plasma applicator 105 to create flow conditions within the plasma applicator prior to igniting the plasma 104 via a microwave radiation source 106. In some embodiments, both the entrained flow and the sheath flow are axisymmetric and laminar, while in other embodiments, the gas flow is vortexed. In some embodiments, the feedstock can be introduced into the microwave plasma torch 100, where the feedstock can be entrained by a gas flow that directs the material toward the plasma 104.

[0030] In some embodiments, the feedstock may undergo physical and / or chemical transformation within the microwave plasma 104. The inlet 102 may be used to introduce a process gas to entrain and accelerate the feedstock toward the plasma 104. In some embodiments, a second vortex gas flow may be formed to provide sheath protection for the plasma applicator 104 and the inner wall of the reaction chamber 110 to prevent those structures from melting due to thermal radiation from the plasma 104.

[0031] Various parameters of the microwave plasma 104 formed by the plasma applicator 105 can be adjusted manually or automatically to achieve the desired material. These parameters can include, for example, power, plasma gas flow rate, type of plasma gas, presence of extension tubes, extension tube materials, insulation level of the reactor chamber or extension tubes, coating level of extension tubes, geometry of extension tubes (e.g., tapered / stepped), feed material size, feed material insertion rate, feed material inlet location, feed material inlet orientation, number of feed material inlets, plasma temperature, residence time, and cooling rate. The resulting material can exit the plasma into a sealed chamber 112 where it is quenched and then collected.

[0032] In some embodiments, the feedstock is injected after the microwave plasma applicator to be processed in the "plume" or "exhaust" of the microwave plasma torch. Thus, the plasma of the microwave plasma torch joins at the outlet end of the plasma torch core tube 108 or further downstream. In some embodiments, an adjustable downstream feed allows the feedstock to join with the downstream plasma plume at a temperature suitable for optimal feedstock melting by precisely positioning the temperature level and residence time. Adjusting the inlet position and plasma characteristics can allow further customization of material properties. In addition, in some embodiments, the length of the plasma plume can be adjusted by adjusting the power, gas flow rate, pressure, and equipment configuration (e.g., introducing an extension tube).

[0033] In some embodiments, the feed configuration may include one or more separate feed nozzles surrounding the plasma plume. Feedstock may enter the plasma from any direction and may be fed 360° around the plasma depending on the placement and orientation of the inlet 102. Furthermore, by adjusting the placement of the inlet 102, feedstock may enter the plasma at a specific location along the length of the plasma 104 where a specific temperature has been measured and a residence time estimated for providing desired properties of the resulting material.

[0034] In some embodiments, the angle of the inlet 102 relative to the plasma 104 can be adjusted so that the feedstock can be injected at any angle relative to the plasma 104. In some embodiments, embodiments of the downstream injection method can use downstream swirl or quench. Downstream swirl refers to additional swirl components that can be introduced downstream from the plasma applicator to keep the powder away from the walls of the applicator 105, the reactor chamber 110, and / or the extension tube 114.

[0035] Figure 2A-2B An exemplary microwave plasma torch is illustrated, which includes a side feed hopper, thus allowing downstream feeding. Therefore, in this embodiment, the feedstock is injected after the microwave plasma torch applicator to be processed in the "plume" or "exhaust" of the microwave plasma torch. Therefore, compared to top feeding (or upstream feeding), the plasma of the microwave plasma torch is joined at the outlet end of the plasma torch to allow downstream feeding of the feedstock. This downstream feeding can advantageously extend the life of the torch because the hot zone is protected indefinitely to prevent any material from being deposited on the walls lining the hot zone. In addition, this allows the downstream plasma plume to be joined at a temperature suitable for optimal powder melting by precisely positioning the temperature level and residence time. For example, the length of the plume can be adjusted using the microwave powder, gas flow, and pressure in the quenching vessel containing the plasma plume.

[0036] Typically, downstream feeding can utilize two main hardware configurations to establish a stable plasma plume: an annular torch such as described in U.S. Patent Publication No. 2018 / 0297122 (the entire contents of which are hereby incorporated by reference), or a vortex torch as described in US 8748785 B2 and US 9932673 B2, the entire contents of which are hereby incorporated by reference. A feeding system that is tightly coupled to the plasma plume at the outlet of the plasma torch is used to feed the powder axisymmetrically to maintain process uniformity.

[0037] Other feed configurations may include one or several separate feed nozzles surrounding the plasma plume. The feed powder may enter the plasma at a point from any direction and may be fed to a point within the plasma from any direction, 360° around the plasma. The feed powder may enter the plasma at a specific location along the length of the plasma plume, where specific temperatures have been measured and residence times estimated for adequate melting of the particles. The molten particles exit the plasma into a sealed chamber where they are quenched and then collected.

[0038] The feed material 214 may be introduced into the microwave plasma applicator 202. The hopper 206 may be used to store the feed material 214 before feeding the feed material 214 into the microwave plasma applicator 202, the plume, and / or the exhaust 218. The feed material 214 may be injected at any angle of 5, 10, 15, 20, 25, 30, 35, 40, 45, 50, or 55 degrees relative to the longitudinal direction of the plasma applicator 302. In some embodiments, the feed material may be injected at an angle greater than 5, 10, 15, 20, 25, 30, 35, 40, 45, 50, or 55 degrees. In some embodiments, the feed material may be injected at an angle less than 5, 10, 15, 20, 25, 30, 35, 40, 45, 50, or 55 degrees. In alternative embodiments, the feed material may be injected along the longitudinal axis of the plasma torch.

[0039] The microwave radiation may be brought into the plasma applicator 202 via a waveguide 204. A feed material 214 is fed into the plasma chamber 210 and placed in contact with the plasma generated by the plasma applicator 202. Upon contact with the plasma, plasma plume, or plasma exhaust 218, the feed material melts. While still in the plasma chamber 210, the feed material 214 cools and solidifies and is then collected in a container 212. Alternatively, the feed material 214 may exit the plasma chamber 210 through the outlet 212 while still molten and cool and solidify outside the plasma chamber. In some embodiments, a quench chamber may be used, which may or may not use a positive pressure. Although similar to Figure 1 Described separately, but Figure 2A and Figure 2B The embodiments are understood to use Figure 1 Similar features and conditions of the embodiments.

[0040] Figure 3 Another exemplary plasma device for processing feed material is shown. In some embodiments, the vortex gas flow can originate from a vortex chamber or a vortex module of a microwave plasma device. The vortex gas flow can be generated in the vortex chamber by means of a small orifice vortex nozzle oriented at an angle relative to the inner surface of the torch, and the inner surface of the torch may include a protective lining. The high speed and vortex action of this flow protect the inner diameter of the torch from the high heat associated with the plasma. In some embodiments, the core gas flow including the main ionized gas originates from a core flow chamber or module upstream of the vortex flow module. In some embodiments, this core gas flow is intended to be substantially straight and absorb most of the microwave energy (relative to the vortex flow).

[0041] like Figure 4 As shown in, in some embodiments, the core flow module combines two relatively oriented gas streams that form a bend before mixing and flowing into the vortex module downstream of the core flow module. In some examples of this configuration, the core plasma gas flow and the vortex flow may collide with each other and produce undesirable flow deviations that vary over time. Although these deviations can help flow mixing, these deviations produce inhomogeneities in the resulting plasma and reduce flow coherence. In essence, the plasma plume needs to be constantly "updated" to a variable incoming flow pattern.

[0042] According to some embodiments, a new flow paradigm is described herein for a core flow module, wherein a vortex or vortex component is added to the flow upstream of the vortex module. The vortex flow component from the core flow module is combined with the vortex flow from the vortex flow module to form a composite flow, and the composite flow enters the liner area. In some embodiments, the composition and temperature of the gas flow from the core vortex flow and the vortex flow module are substantially similar or identical. These flows can form a "composite flow" (i.e., two upstream vortex flows). However, the external vortex flow from the vortex flow module introduced after the core vortex flow can be injected at a significantly higher speed at the outer periphery of the flow, thereby protecting the liner from the high temperature of the ionized core vortex flow. The high angular momentum of the vortex flow from the vortex flow module pushes it outward to the periphery, thereby keeping it outside the core vortex flow and away from the core vortex flow. In some embodiments, the inlet velocity of the vortex flow is preferably 3.5 to 9 times that of the core vortex flow, but acceptable performance can be achieved in an even wider range, such as, for example, 1.5 to 20 times that of the core vortex flow.

[0043] Figure 5An exemplary microwave plasma processing apparatus according to some embodiments of the present invention is shown. Figure 5 As shown in FIG. 1 , the microwave plasma device includes a core vortex module upstream of the vortex flow module. In some embodiments, adding vortices to the core flow provides coherence and uniformity to the gas flow. Figure 5 In a configuration with a nominal flow pattern, any deviation from the nominal flow pattern will be a matter of degree and not of form. Figure 3 The core flow module configuration creates variability in the flow pattern. In some embodiments, the vortex nature of the upstream core vortex flow provides fullness and stability to the plasma flame and expands the allowable input flow range for maintaining the plasma. For example, in some embodiments herein, the power / flow ratio can be in the range from about 0.3 kW / scfm to about 5.5 kW / scfm. Therefore, in some embodiments, at low powers of around 10 kW, the gas flow rate of the core vortex flow or the outer vortex flow can be as low as 1.8 scfm, and at high powers of 100 kW, the gas flow can be as high as 330 scfm. According to Figure 5 The process sequence starts with a core vortex module, followed by a vortex flow module, a microwave plasma applicator and a generation zone, and a material feed. In some embodiments, the quenching gas can be introduced at the same location as the material feed. This process flow and plasma device configuration differs from conventional configurations because the configuration of the embodiments herein involves generating a gas vortex flow upstream of the plasma applicator and the material feed. For example, in Figure 2B In the process sequence shown in , the core flow module is located upstream of the plasma applicator and generator. The core flow module generates a substantially straight gas flow toward the microwave generator 204. No vortex flow is generated before the microwave generator or the material feed of the plasma device. Instead, the vortex flow is generated downstream of the microwave generator 204 and the material feed.

[0044] In some embodiments, Figure 6 As shown in the configuration of , the core vortex module and the vortex flow module can generate gas flows that swirl in the same direction. For example, both modules can generate clockwise flow or counterclockwise flow using corresponding vortex nozzles. However, relative to the straight core flow, the anti-rotation configuration using the core vortex flow to generate a flow oriented opposite to the vortex flow module also exhibits improved plasma performance. This shows that even relative to the vortex flow, the core flow coherence is also important for plasma stability.

[0045] In some embodiments, the vortex core flow can be generated in different ways between several variables. Some number (n=2, 3, 4, 5, 6, 7, 8, 9, 10, 15, 20, 25, 30, 35, 40, 45, 50, 100 or any value between the above values) of inlet flows can be arranged to be offset and tilted relative to the center point of the plasma tube. From a bird's eye view orientation system, "offset" can represent the shortest distance between the axis of the inlet and the turning point of the center of the system. In other words, the jet is not directly pointed to the center, but the jet can be angled with some "offset" relative to the center point. Therefore, in some embodiments, the jet is "angled", or the jet is "offset". Figure 8 The example of the concept of angle and offset relative to the jet is illustrated. For example, one or more inlet streams can be oriented at an angle of about 0°, about 5°, about 10°, about 15°, about 20°, about 25°, about 30°, about 35°, about 40°, about 45°, about 50°, about 55°, about 60°, about 65°, about 70°, about 75°, about 80°, about 85°, about 90° or any value between the above values ​​relative to the center point. In some embodiments, one or more inlet streams can be oriented at an angle of about 9.6° or 10° relative to the center point. For example, the diameter of the core vortex inlet can be less than about .335 inches, or between about .335 inches and about .393 inches. For the secondary vortex module inlet, the diameter can be about 0.023 inches. In some embodiments, the diameter of the vortex module inlet can be between about .0161 inches and about .0345 inches. In addition, the inlet diameter of the orifice can be changed to provide a desired flow velocity. Figure 7 An exemplary swirl gas inlet configuration that generates a counter-clockwise swirl gas flow is shown.

[0046] In some embodiments, the core vortex module and the vortex flow module are Figure 5 The configuration can achieve stable plasma generation at lower power levels. For example, stable and uniform plasma can be generated at power levels of about 70KW or higher. The instability of conventional designs hinders the use of higher power levels. This instability grows with increasing flow and causes arcs and hot spots to form on the lining of the plasma device. Therefore, conventional microwave plasma devices only use power up to 45kW. In addition, the stability achieved by the design described in this article produces a more compact plasma, so there is less interaction with the liner. For example, when using Ar / H2 gas, this compact plasma allows the %H2 to be reduced to 5% while maintaining stability. In conventional configurations, a higher H2 percentage was previously required to keep the plasma more compact.

[0047] Microwave plasma treatment

[0048] In a microwave plasma process, the feedstock may be entrained in an inert and / or reducing gas environment and injected into a microwave plasma, a microwave plasma plume, or a microwave plasma exhaust. After injection into the hot plasma (or plasma plume or exhaust), the feedstock may undergo physical and / or chemical transformation (e.g., spheroidization). After treatment, the resulting material may be released into a chamber filled with an inert gas and directed to a hermetically sealed barrel where it is stored. This process may be performed at atmospheric pressure, a partial vacuum, or a pressure slightly above atmospheric pressure.

[0049] In alternative embodiments, the process can be performed in a low vacuum, medium vacuum, or high vacuum environment. The process can be run in batches or continuously, where the barrel is replaced as it fills with processed material. By controlling process parameters such as cooling gas flow rate, residence time, plasma conditions, cooling gas composition, various material properties can be controlled.

[0050] The residence time of the particles in the hot zone of the plasma can also be adjusted to provide control over the resulting material properties. That is, the length of time that the particles are exposed to the plasma determines the degree of melting of the raw material particles (that is, the surface melting of the particles compared to the innermost part or core of the particles). The residence time can be adjusted by adjusting such operating variables as the particle injection rate and flow rate (and conditions such as laminar or turbulent flow) in the hot zone. The residence time can also be adjusted using equipment changes. For example, the residence time can be adjusted by changing the cross-sectional area of ​​the plasma (e.g., by extending the plasma). In some embodiments, extending the plasma can include incorporating an extension tube into a microwave plasma device.

[0051] Additional Embodiments

[0052] In the foregoing description, the present invention has been described with reference to specific embodiments thereof. However, it will be apparent that various modifications and changes may be made thereto without departing from the broader spirit and scope of the present invention. Therefore, the description and drawings will be viewed in an illustrative rather than a restrictive sense.

[0053] In fact, although the present invention has been disclosed in the context of certain embodiments and examples, it will be understood by those skilled in the art that the present invention extends beyond the specifically disclosed embodiments to other alternative embodiments and / or uses of the present invention and its obvious modifications and equivalents. In addition, although several variations of the embodiments of the present invention have been shown and described in detail, it will be readily apparent to those skilled in the art that other modifications within the scope of the present invention will be apparent based on this disclosure. It is also conceivable that various combinations or sub-combinations of the specific features and aspects of the embodiments may be performed, and they still fall within the scope of the present invention. It should be understood that the various features and aspects of the disclosed embodiments may be combined or substituted with each other to form different modes of embodiments of the disclosed invention. Any method disclosed herein need not be implemented in the order described. Therefore, it is intended that the scope of the present invention disclosed herein should not be limited by the specific embodiments described above.

[0054] It will be appreciated that the systems and methods of the present disclosure each have several innovative aspects, wherein no single aspect is entirely responsible for or required for the desired attributes disclosed herein. The various features and processes described above may be used independently of one another, or may be combined in various ways. All possible combinations and sub-combinations are intended to fall within the scope of the present disclosure.

[0055] Certain features described in the context of separate embodiments in this specification may also be implemented in combination in a single embodiment. Conversely, various features described in the context of a single embodiment may also be implemented individually or in any suitable sub-combination in multiple embodiments. In addition, although features may be described above as functioning in certain combinations and even initially claimed as such, in some cases, one or more features from a combination may be removed from the claimed combination, and the claimed combination may involve sub-combinations or variations of sub-combinations. No single feature or group of features is necessary or indispensable for every embodiment.

[0056] It will also be understood that, unless otherwise specifically stated or otherwise understood in the context of use, conditional language used herein (especially such as, "can", "may", "can", "can", "for example", etc.) is generally intended to convey that certain embodiments include, while other embodiments do not include certain features, elements and / or steps. Therefore, such conditional language is generally not intended to imply that features, elements and / or steps are required by one or more embodiments in any way, or that one or more embodiments must include logic for deciding (with or without author input or prompting) whether these features, elements and / or steps are included in any particular embodiment or will be implemented in any particular embodiment. The terms "include", "including", "having", etc. are synonymous and are used inclusively in an open-ended manner and do not exclude additional elements, features, actions, operations, etc. In addition, the term "or" is used in its inclusive sense (rather than its exclusive sense), so that when, for example, it is used to connect a list of elements, the term "or" means one, some or all of the elements in the list. In addition, unless otherwise specified, the articles "one", "an", and "said" used in this application and the appended claims should be interpreted as meaning "one or more" or "at least one". Similarly, although the operations may be illustrated in a particular order in the accompanying drawings, it will be appreciated that such operations need not be implemented in the particular order shown or in a sequential order, or all illustrated operations are implemented to achieve the desired result. In addition, the accompanying drawings may schematically illustrate more than one exemplary process in the form of a flow chart. However, other operations not illustrated may be incorporated into the schematically illustrated exemplary methods and processes. For example, one or more additional operations may be implemented before, after, at the same time, or between any illustrated operations. In addition, in other embodiments, these operations may be rearranged or reordered. In some cases, multitasking and parallel processing may be advantageous. In addition, the separation of various system components in the embodiments described above should not be understood as requiring such separation in all embodiments, and it should be understood that the described program components and systems may generally be integrated together in a single software product or packaged into multiple software products. In addition, other embodiments are within the scope of the following claims. In some cases, the actions recited in the claims may be implemented in different orders and still achieve the desired result.

[0057] In addition, although the methods and devices described herein may be susceptible to various modifications and alternative forms, specific examples thereof have been shown in the drawings and described in detail herein. However, it should be understood that the present invention is not limited to the specific forms or methods disclosed, but on the contrary, the present invention will cover all modifications, equivalents and alternatives falling within the spirit and scope of the various embodiments described and the appended claims. In addition, any specific features, aspects, methods, properties, characteristics, qualities, attributes, elements, etc. disclosed herein in conjunction with the embodiments or examples can be used in all other embodiments or embodiments set forth herein. Any method disclosed herein does not need to be implemented in the order described. The methods disclosed herein may include certain actions taken by practitioners; however, the methods may also include any third-party instructions for those actions, whether express or implied. The scope disclosed herein also includes any and all overlaps, sub-ranges and combinations thereof. Languages ​​such as "up to", "at least", "greater than", "less than", "between...", etc. include the numbers described. Numbers beginning with a term such as "about" or "approximately" include the recited number and should be interpreted based on the circumstances (e.g., in some cases, as accurate as reasonably possible, such as ±5%, ±10%, ±15%, etc.). For example, "about 3.5 mm" includes "3.5 mm". Phrases beginning with a term such as "substantially" include the recited phrase and should be interpreted based on the circumstances (e.g., in some cases, as much as reasonably possible). For example, "substantially constant" includes "constant". Unless otherwise noted, all measurements are made under standard conditions, including temperature and pressure.

[0058] As used herein, a phrase referring to "at least one of" a list of items refers to any combination of those items, including single members. As an example, "at least one of A, B, or C" is intended to cover: A, B, C, A and B, A and C, B and C, and A, B and C. Unless expressly stated otherwise, connective language such as the phrase "at least one of X, Y, and Z" is understood, together with the context of common usage, to convey that an item, term, or the like may be at least one of X, Y, or Z. Therefore, such connective language is not generally intended to imply that certain embodiments require that at least one of X, at least one of Y, and at least one of Z each be present. The headings provided herein, if any, are for convenience only and do not necessarily affect the scope or meaning of the apparatus and methods disclosed herein.

[0059] Thus, the claims are not intended to be limited to the embodiments shown herein, but are to be accorded the widest scope consistent with the disclosure, principles and novel features disclosed herein.

Claims

1. A microwave plasma device for processing materials, comprising: a first flow module, a second flow module, and a liner; a first vortex module in communication with the second flow module, the first vortex module comprising a plurality of first gas inlets configured to generate a first vortex gas flow toward the second vortex module; as well as a second swirl module comprising a plurality of second gas inlets configured to generate a second swirl gas flow toward the liner, The first swirl module and the second swirl module are configured such that the first swirl gas flow and the second swirl gas flow are combined into a composite gas flow before entering the liner.

2. The microwave plasma apparatus of claim 1 , further comprising a microwave power source in communication with the composite gas flow and configured to provide microwave radiation to generate a microwave plasma when in contact with the composite gas flow.

3. The microwave plasma device according to claim 2, wherein: The microwave power source provides at least 70 KW of microwave radiation.

4. The microwave plasma device according to claim 2, further comprising one or more feed material inlets connected to the first flow module, the second flow module, or the liner, wherein the one or more feed material inlets are configured to provide feed material to the microwave plasma.

5. The microwave plasma device according to claim 1, wherein: The plurality of first gas inlets are configured to generate the first swirling gas flow in a counter-clockwise direction.

6. The microwave plasma device according to claim 1, wherein: The plurality of second gas inlets are configured to generate the second swirling gas flow in a counter-clockwise direction.

7. The microwave plasma device according to claim 1, wherein: The plurality of gas inlets are configured to generate the second swirling gas flow in a clockwise direction.

8. The microwave plasma device according to claim 1, wherein: The plurality of first gas inlets are configured to generate the first swirling gas flow in a clockwise direction.

9. The microwave plasma device according to claim 1, wherein: The plurality of second gas inlets are configured to generate the second swirling gas flow in a counter-clockwise direction.

10. The microwave plasma device according to claim 1, wherein: The plurality of second gas inlets are configured to generate the second swirling gas flow in a clockwise direction.

11. The microwave plasma device according to claim 1, wherein: The plurality of first gas inlets includes 2 inlets.

12. The microwave plasma device according to claim 1, wherein: The plurality of second gas inlets includes 2 inlets.

13. The microwave plasma device according to claim 1, wherein: The plurality of first gas inlets comprises more than 2 inlets.

14. The microwave plasma device according to claim 1, wherein: The plurality of second gas inlets comprises more than 2 inlets.

15. The microwave plasma device according to claim 1, wherein: At least one first gas inlet of the plurality of first gas inlets is oriented at an angle between 0° and 90° relative to at least another first gas inlet of the plurality of first gas inlets.

16. The microwave plasma device according to claim 1, wherein: At least one second gas inlet of the plurality of second gas inlets is oriented at an angle between 0° and 90° relative to at least another second gas inlet of the plurality of second gas inlets.

17. The microwave plasma device according to claim 1, wherein: The first swirling gas flow includes ionized gas.

18. The microwave plasma device according to claim 1, wherein: The first plurality of gas inlets include an inlet diameter between about .335 inches and about .393 inches.

19. The microwave plasma device according to claim 1, wherein: The second plurality of gas inlets include inlet diameters between about .0161 inches and about .0345 inches.

20. The microwave plasma device according to claim 1, wherein: The first flow module, the second flow module, and the liner are also configured to direct the composite gas flow to a reaction chamber downstream of the liner.

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