Temperature simulation method, device and equipment for resistor disc under impact current and medium

Abstract

The invention relates to a temperature simulation method, device and equipment for a resistor disc under impact current and a medium. The geometric model of the resistor disc is constructed based on the actual size parameters of the resistor disc, and the material parameters of the resistor disc are determined as the material parameters of the geometric model; constructing a current field and a temperature field of the geometric model, and coupling the current field and the temperature field to obtain an electrothermal coupling model corresponding to the resistor disc; based on the current waveform parameter of the target impact current applied to the resistor disc, constructing the boundary condition of the electrothermal coupling model; calculating temperature field data of the electrothermal coupling model under material parameters and boundary conditions to obtain time-space distribution data of a temperature field; and analyzing the space-time distribution data to obtain the temperature distribution data and the temperature change data of the resistor disc under the action of the target impact current, so that the accuracy and the efficiency of temperature evaluation of the resistor disc can be improved, high-cost and long-period actual tests are avoided, the cost is reduced, and a scientific basis is provided for the design of the resistor disc.

Description

Technical Field

[0001] The present disclosure relates to the field of electric power technology, and in particular to a method, device, equipment and medium for simulating the temperature of a resistor under an impulse current. Background Art

[0002] Lightning arresters are an important part of protective equipment in power systems. They are mainly used to prevent lightning strikes or other transient overvoltages from damaging power equipment. The performance of lightning arresters directly affects the safety and reliability of power systems. Resistors are key functional components in lightning arresters, and the temperature rise characteristics of resistors are crucial to the stability and safety of lightning arresters.

[0003] Under the action of transient overvoltages such as lightning strikes, the resistors of the arrester will be subjected to high-intensity impulse currents, which will cause the temperature of the resistors to rise, affecting the material properties of the resistors, and thus affecting the overall performance and service life of the arrester. Therefore, accurately evaluating the temperature change characteristics of the resistors under impulse currents is of great significance for optimizing the design of the arrester, selecting appropriate materials, and ensuring its reliability.

[0004] At present, the temperature evaluation of lightning arrester resistors is mainly carried out through experimental measurement. This method is not only costly, but also time-consuming and has low evaluation accuracy. It is difficult to adapt to the rapidly developing power industry's demand for evaluating the performance of lightning arrester resistors. Summary of the invention

[0005] In order to solve the above technical problems, the present disclosure provides a temperature simulation method, device, equipment and medium for a resistor under an impulse current.

[0006] A first aspect of the present disclosure provides a temperature simulation method for a resistor under an impulse current, comprising:

[0007] A geometric model of the resistor is constructed based on actual size parameters of the resistor, and material parameters of the resistor are determined as material parameters of the geometric model;

[0008] Construct the current field and temperature field of the geometric model, couple the current field with the temperature field, and obtain the electrothermal coupling model corresponding to the resistor;

[0009] Based on the current waveform parameters of the target impulse current applied to the resistor, the boundary conditions of the electrothermal coupling model are constructed;

[0010] Calculate the temperature field data of the electrothermal coupling model under material parameters and boundary conditions to obtain the temporal and spatial distribution data of the temperature field;

[0011] The time-space distribution data are analyzed to obtain the temperature distribution data and temperature change data of the resistor under the target impulse current.

[0012] A second aspect of the present disclosure provides a temperature simulation device for a resistor under an impulse current, comprising:

[0013] A first construction module is used to construct a geometric model of the resistor based on actual size parameters of the resistor, and determine material parameters of the resistor as material parameters of the geometric model;

[0014] The second construction module is used to construct the current field and temperature field of the geometric model, couple the current field with the temperature field, and obtain the electrothermal coupling model corresponding to the resistor;

[0015] A third construction module is used to construct the boundary conditions of the electrothermal coupling model based on the current waveform parameters of the target impulse current applied to the resistor;

[0016] A calculation module is used to calculate the temperature field data of the electrothermal coupling model under material parameters and boundary conditions to obtain the temporal and spatial distribution data of the temperature field;

[0017] The analysis module is used to analyze the time-space distribution data to obtain the temperature distribution data and temperature change data of the resistor under the target impulse current.

[0018] A third aspect of the present disclosure provides a computer device, including a memory and a processor, wherein a computer program is stored in the memory, and when the computer program is executed by the processor, the temperature simulation method of a resistor under an impulse current of the first aspect can be implemented.

[0019] A fourth aspect of the present disclosure provides a computer-readable storage medium, in which a computer program is stored. When the computer program is executed by a processor, the temperature simulation method of a resistor under an impulse current of the first aspect can be implemented.

[0020] Compared with the prior art, the technical solution provided by the present invention has the following advantages:

[0021] The present invention constructs a geometric model of a resistor based on the actual size parameters of the resistor, determines the material parameters of the resistor as the material parameters of the geometric model; constructs the current field and temperature field of the geometric model, couples the current field with the temperature field, and obtains the electrothermal coupling model corresponding to the resistor; constructs the boundary conditions of the electrothermal coupling model based on the current waveform parameters of the target impulse current applied to the resistor; calculates the temperature field data of the electrothermal coupling model under the material parameters and boundary conditions to obtain the spatiotemporal distribution data of the temperature field; analyzes the spatiotemporal distribution data to obtain the temperature distribution data and temperature change data of the resistor under the target impulse current. The present invention constructs an electrothermal coupling model through the current field and temperature field of the resistor, simulates the temperature data of the resistor under the impulse current, and analyzes to obtain the temperature distribution data and temperature change data of the resistor under the impulse current, which can improve the accuracy and efficiency of the resistor temperature evaluation, avoid high-cost, long-cycle actual testing, significantly reduce the cost of the resistor design verification process, and provide a relatively accurate scientific basis for the material selection, structural design and thermal management of the arrester resistor, thereby improving the stability and durability of the arrester resistor under extreme conditions. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and, together with the description, serve to explain the principles of the present disclosure.

[0023] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0024] Figure 1 is a flow chart of a temperature simulation method of a resistor under an impulse current provided by an embodiment of the present disclosure;

[0025] Figure 2 is a schematic diagram of current waveform parameters of a target impact current provided by an embodiment of the present disclosure;

[0026] Figure 3 is a schematic diagram of average temperature change of a resistor provided by an embodiment of the present disclosure;

[0027] Figure 4 It is a structural schematic diagram of a temperature simulation device for a resistor under a surge current provided by an embodiment of the present disclosure;

[0028] Figure 5 It is a structural diagram of a computer device provided in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0029] In order to more clearly understand the above-mentioned objectives, features and advantages of the present disclosure, the scheme of the present disclosure will be further described below. It should be noted that the embodiments of the present disclosure and the features in the embodiments can be combined with each other without conflict.

[0030] In the following description, many specific details are set forth to facilitate a full understanding of the present disclosure, but the present disclosure may also be implemented in other ways different from those described herein; it is obvious that the embodiments in the specification are only part of the embodiments of the present disclosure, rather than all of the embodiments.

[0031] It should be understood that the various steps described in the method embodiments of the present disclosure may be performed in different orders and / or in parallel. In addition, the method embodiments may include additional steps and / or omit the steps shown. The scope of the present disclosure is not limited in this respect.

[0032] It should be noted that, in this article, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0033] It should be noted that the modifications of "one" and "plurality" mentioned in the present disclosure are illustrative rather than restrictive, and those skilled in the art should understand that unless otherwise clearly indicated in the context, it should be understood as "one or more".

[0034] The temperature simulation method of a resistor under impulse current provided in an embodiment of the present disclosure can be executed by a computer device, which can be understood as any device with processing and computing capabilities. The device can include but is not limited to mobile terminals such as smart phones, laptops, tablet computers (PADs), and fixed electronic devices such as digital TVs and desktop computers.

[0035] In order to better understand the inventive concept of the embodiments of the present disclosure, the technical solutions of the embodiments of the present disclosure are described below in conjunction with exemplary embodiments.

[0036] Figure 1: is a flow chart of a temperature simulation method of a resistor under a surge current provided by an embodiment of the present disclosure, such as Figure 1 As shown, the temperature simulation method of the resistor under the impulse current provided in this embodiment may include the following steps:

[0037] Step 110 : constructing a geometric model of the resistor based on actual size parameters of the resistor, and determining material parameters of the resistor as material parameters of the geometric model.

[0038] In the embodiment of the present disclosure, the resistor may be a resistor in a lightning arrester. The computer device may construct a geometric model of the resistor according to actual size parameters of the resistor, and determine material parameters of the resistor as material parameters of the geometric model.

[0039] The actual size parameters of the resistor may include parameters such as outer diameter, inner diameter, height, etc. The material parameters of the resistor may include parameters such as electrical conductivity, thermal conductivity, relative dielectric constant, density, thermal expansion coefficient, specific heat capacity at normal pressure, and thermal conductivity.

[0040] In some embodiments, the computer device can construct a three-dimensional model of the resistor sheet based on the actual size parameters of the resistor sheet; the three-dimensional model of the resistor sheet is meshed to obtain a geometric model of the resistor sheet, wherein the mesh size of each region in the geometric model is negatively correlated with the structural complexity of the region. That is, the greater the structural complexity of the region, the smaller the mesh of the region; the smaller the structural complexity of the region, the larger the mesh of the region. This can reduce the amount of calculation, and improve the calculation efficiency while ensuring the calculation accuracy.

[0041] Step 120 , construct the current field and temperature field of the geometric model, couple the current field with the temperature field, and obtain an electrothermal coupling model corresponding to the resistor.

[0042] In the disclosed embodiment, the computer device may construct the current field and temperature field of the geometric model of the resistor, and then couple the current field with the temperature field to obtain an electrothermal coupling model corresponding to the resistor.

[0043] Among them, the current field is the current field generated when the current passes through the resistor. The current passing through the resistor will generate heat, and the temperature field can be understood as the collection of temperatures at various locations in the geometric model of the resistor. It is a function of time and space coordinates, reflecting the distribution of temperature in space and time.

[0044] Step 130 : constructing boundary conditions of the electrothermal coupling model based on the current waveform parameters of the target impulse current applied to the resistor.

[0045] In an embodiment of the present disclosure, a computer device can obtain current waveform parameters of a target impact current applied to a resistor. For example, the current waveform parameters of a target impact current can be obtained in response to user input, and then the boundary conditions of an electrothermal coupling model can be constructed based on the current waveform parameters of the target impact current applied to the resistor.

[0046] The target surge current can be understood as a high-intensity surge current.

[0047] For example, the expression of the current waveform parameter of the target impact current can be expressed as formula (1):

[0048]

[0049] t p =ln(β / α) / (β-α); (1)

[0050] Where i(t) represents the current waveform parameter at time t, in (A); I0 represents the current amplitude, in (A); α and β are time constants; e -βt Determines the rising part of the function; e -αt Determines the decay part of the function; η represents the peak correction factor; tp represents the peak time.

[0051] For example, for a target impulse current a of 4 / 10μs100kA, take I0=100kA, η is equal to 0.32573, and the expression of the current waveform parameter of the target impulse current a can be expressed as formula (2):

[0052]

[0053] like Figure 2 As shown, Figure 2 It is a schematic diagram of current waveform parameters of a target impact current, where the horizontal axis is time t, in seconds (s), and the vertical axis is current waveform parameter i, in amperes (A).

[0054] In some embodiments, the current waveform parameters of the target impact current applied to the resistor can be set as the inlet boundary conditions of the electrothermal coupling model, the target end face of the resistor can be set as the current inlet, and the opposite end face of the target end face of the resistor can be set as the ground end face; that is, the target impact current corresponding to the current waveform parameters enters the resistor from the current inlet and flows out from the ground end face.

[0055] The outer boundary of the resistor is set as a natural convection boundary, the convection heat transfer coefficient of the resistor is set as a preset convection heat transfer coefficient, and the initial temperature of the resistor is set as a preset temperature.

[0056] The target end face may be any end face of the resistor sheet and may be set as required, which is not limited here.

[0057] The preset convection heat transfer coefficient can be set as needed, for example, 5 W / (m·K), which is not limited here.

[0058] The preset temperature can be set as needed, for example, 20°C, which is not limited here.

[0059] Step 140: Calculate the temperature field data of the electrothermal coupling model under material parameters and boundary conditions to obtain the spatiotemporal distribution data of the temperature field.

[0060] In the disclosed embodiment, the computer device can calculate the temperature field data of the electrothermal coupling model under the material parameters and boundary conditions of the geometric model of the resistor to obtain the spatiotemporal distribution data of the temperature field. The spatiotemporal distribution data of the temperature field can include the temperature of each position in the geometric model of the resistor at each time under the action of the target impulse current.

[0061] In some embodiments, calculating the temperature field data of the electrothermal coupling model under material parameters and boundary conditions to obtain the spatiotemporal distribution data of the temperature field may include steps 1401-1402:

[0062] Step 1401: Solve the current field equation of the electrothermal coupling model based on the current waveform parameters and the material parameters to obtain the current density and the electric field intensity of the electric field generated by the geometric model under the target impulse current.

[0063] Current density is a physical quantity that describes the strength and direction of current at a certain point in a circuit. It is a vector. The magnitude of current density is equal to the amount of electricity passing through a unit area per unit time. The direction vector is the normal vector of the corresponding section of the unit area, and the direction is determined by the direction of the positive charge passing through this section. The unit is ampere per square meter A / ㎡.

[0064] Electric field strength is a physical quantity used to indicate the strength and direction of the electric field, denoted by E.

[0065] For example, the current field equation may include equation (3):

[0066]

[0067] Where, ▽ represents the differential operator; J represents the current density; J c Represents conduction current; J drepresents displacement current; E represents electric field intensity; j represents an imaginary operator, which is used to obtain the imaginary part of the calculation result; D represents electric displacement; V represents electric potential; ε0 represents the vacuum dielectric constant; ω represents the angular frequency of the current, the unit is (rad / s) ω=2πf, f represents the current frequency; δ represents the dielectric loss angle; ε represents the relative dielectric constant of the resistor; σ represents the conductivity of the resistor, the unit is (S / m);

[0068] The above-mentioned conduction current, displacement current, electric field strength, electric displacement, electric potential and angular frequency are determined by the current waveform parameters of the target impulse current; the relative dielectric constant and conductivity are determined by the material parameters of the resistor.

[0069] A differential operator is an operator that performs differential operations on functions.

[0070] Step 1402 solves the temperature field equation of the electrothermal coupling model based on the current density and the electric field strength to obtain the spatiotemporal distribution data of the temperature field under the target impulse current.

[0071] For example, the temperature field equation may include equation (4):

[0072]

[0073] Where, T represents the temporal and spatial distribution data of the temperature field; k represents the thermal conductivity of the resistor, in W / (m·K); C p It represents the specific heat capacity of the resistor at normal pressure, in J / (kg·K); ρ represents the density of the resistor, in kg / m 3 ); t represents the time; Q represents the heat generation power per unit volume of the geometric model, in units of (W / m 3 ); Re represents a real number operator, which is used to take the real part of the calculation result and convert the complex result into a physically meaningful quantity; the above thermal conductivity, specific heat capacity at normal pressure and density are determined by the material parameters of the resistor.

[0074] The expression of convective heat transfer at the interface between the outer boundary of the geometric model of the resistor and the air (the outer boundary of the field) can be expressed as formula (5):

[0075] -n·q=h(T1-T)

[0076]

[0077] Where n represents the direction vector; h represents the convective heat transfer coefficient, the unit is W / (m 2 ·K); T1 represents the air temperature; q represents the heat flux density, the unit is (W / m 2 ).

[0078] Step 150: Analyze the time-space distribution data to obtain temperature distribution data and temperature change data of the resistor under the target impulse current.

[0079] In the disclosed embodiment, the computer device can analyze the temporal and spatial distribution data of the temperature field to obtain the temperature distribution data and temperature change data of the resistor under the target impulse current.

[0080] The temperature distribution data can be understood as the temperature of each position of the resistor at each time under the action of the target impulse current.

[0081] The temperature change data can be understood as the temperature change data of each position of the resistor during the period of the target impulse current. For example, the temperature change data can be the average temperature change data of the resistor, such as Figure 3 As shown, Figure 3 This is a schematic diagram of the average temperature change of a resistor. The horizontal axis represents time in microseconds (μs), and the vertical axis represents the average temperature of the resistor in degrees Celsius (℃).

[0082] Therefore, the temperature data of the resistor under the action of the impulse current can be simulated through the electrothermal coupling model constructed by the current field and temperature field of the resistor, and the temperature distribution data and temperature change data of the resistor under the action of the impulse current can be obtained by analysis. This can improve the accuracy and efficiency of the resistor temperature assessment, avoid high-cost and long-cycle actual testing, and significantly reduce the cost of the resistor design verification process. It provides a relatively accurate scientific basis for the material selection, structural design and thermal management of the arrester resistor, thereby improving the stability and durability of the arrester resistor under extreme conditions.

[0083] Figure 4 1 is a schematic diagram of a temperature simulation device for a resistor under a surge current provided by an embodiment of the present disclosure. The device can be understood as the above-mentioned computer device or a part of the functional modules in the above-mentioned computer device. Figure 4 As shown, the temperature simulation device 400 of the resistor under the impulse current includes:

[0084] A first construction module 410 is used to construct a geometric model of the resistor based on actual size parameters of the resistor, and determine material parameters of the resistor as material parameters of the geometric model;

[0085] The second construction module 420 is used to construct the current field and temperature field of the geometric model, and couple the current field with the temperature field to obtain an electrothermal coupling model corresponding to the resistor;

[0086] A third construction module 430 is used to construct the boundary conditions of the electrothermal coupling model based on the current waveform parameters of the target impulse current applied to the resistor;

[0087] The calculation module 440 is used to calculate the temperature field data of the electrothermal coupling model under material parameters and boundary conditions to obtain the spatiotemporal distribution data of the temperature field;

[0088] The analysis module 450 is used to analyze the time-space distribution data to obtain the temperature distribution data and temperature change data of the resistor under the target impulse current.

[0089] Optionally, the first building block includes:

[0090] A construction submodule is used to construct a three-dimensional model of the resistor based on actual size parameters of the resistor;

[0091] A partitioning submodule is used to perform mesh partitioning on the three-dimensional model to obtain a geometric model of the resistor;

[0092] Among them, the mesh size of each region in the geometric model is negatively correlated with the structural complexity of the region.

[0093] Optionally, the third building block includes:

[0094] A first setting submodule is used to set the current waveform parameters of the target impulse current as the inlet boundary conditions of the electrothermal coupling model, set the target end face of the resistor as the current inlet, and set the end face opposite to the target end face of the resistor as the ground end face;

[0095] The second setting submodule is used to set the outer boundary of the resistor to the natural convection boundary, set the convection heat transfer coefficient of the resistor to a preset convection heat transfer coefficient, and set the initial temperature of the resistor to a preset temperature.

[0096] Optionally, the above-mentioned calculation module includes:

[0097] The first solving submodule is used to solve the current field equation of the electrothermal coupling model based on the current waveform parameters and the material parameters, and obtain the current density and electric field intensity of the electric field generated by the geometric model under the target impulse current;

[0098] The second solving submodule is used to solve the temperature field equation of the electrothermal coupling model based on the current density and the electric field strength, and obtain the spatiotemporal distribution data of the temperature field under the target impulse current.

[0099] Optionally, the above current field equation includes:

[0100]

[0101] Where, ▽ represents the differential operator; J represents the current density; J c Represents conduction current; J drepresents displacement current; E represents electric field intensity; j represents an imaginary operator, which is used to obtain the imaginary part of the calculation result; D represents electric displacement; V represents electric potential; ε0 represents the vacuum dielectric constant; ω represents the angular frequency of the current; δ represents the dielectric loss angle; ε represents the relative dielectric constant of the resistor; σ represents the conductivity of the resistor;

[0102] The conduction current, displacement current, electric field strength, electric displacement, electric potential and angular frequency are determined by the current waveform parameters of the target impulse current; the relative dielectric constant and conductivity are determined by the material parameters of the resistor.

[0103] The above temperature field equation includes:

[0104]

[0105] Where T represents the temporal and spatial distribution data of the temperature field; k represents the thermal conductivity of the resistor; C p represents the specific heat capacity of the resistor at constant pressure; ρ represents the density of the resistor; t represents the time; Q represents the heating power per unit volume of the geometric model; Re represents a real number operator, which is used to obtain the real number part of the calculation result;

[0106] Thermal conductivity, specific heat capacity at normal pressure and density are determined by the material parameters of the resistor;

[0107] The expression for convective heat transfer at the interface between the outer boundary of the resistor geometry and the air is:

[0108] -n·q=h(T1-T)

[0109]

[0110] Among them, n represents the direction vector; h represents the convective heat transfer coefficient; T1 represents the air temperature; and q represents the heat flux density.

[0111] The expressions of the current waveform parameters of the above target impulse current include:

[0112]

[0113] t p =ln(β / α) / (β-α);

[0114] Where i(t) represents the current waveform parameters at time t; I0 ​​represents the current amplitude; α and β are time constants; e -βt Determines the rising part of the function; e -αt Determines the attenuation part of the function; η represents the peak correction factor; t p Indicates the peak time.

[0115] The device for simulating the temperature of a resistor under impulse current provided in the embodiments of the present disclosure can implement the method of any of the above embodiments, and its execution method and beneficial effects are similar and will not be repeated here.

[0116] The embodiments of the present disclosure also provide a computer device, which includes a processor and a memory, wherein a computer program is stored in the memory, and when the computer program is executed by the processor, the method of any of the above embodiments can be implemented, and its execution method and beneficial effects are similar and will not be repeated here.

[0117] The computer device in the embodiments of the present disclosure may be understood as any device with processing and computing capabilities, and the device may include but is not limited to mobile terminals such as smart phones, laptops, tablet computers (PADs), etc., and fixed electronic devices such as digital TVs, desktop computers, etc.

[0118] Figure 5 is a schematic diagram of the structure of a computer device provided by an embodiment of the present disclosure, such as Figure 5 As shown, the computer device 500 may include a processor 510 and a memory 520, wherein the memory 520 stores a computer program 521, and when the computer program 521 is executed by the processor 510, the method provided by any of the above embodiments can be implemented, and its execution method and beneficial effects are similar, which will not be repeated here.

[0119] Of course, to simplify, Figure 5 Only some of the components related to the present invention in the computer device 500 are shown, and components such as a bus, an input / output interface, an input device, and an output device are omitted. In addition, according to specific application conditions, the computer device 500 may also include any other appropriate components.

[0120] An embodiment of the present disclosure provides a computer-readable storage medium, in which a computer program is stored. When the computer program is executed by a processor, the method of any of the above embodiments can be implemented. The execution method and beneficial effects are similar and will not be repeated here.

[0121] The above-mentioned computer readable storage medium can adopt any combination of one or more readable media. The readable medium can be a readable signal medium or a readable storage medium. The readable storage medium can include, for example, but is not limited to, a system, device or device of electricity, magnetism, light, electromagnetic, infrared, or semiconductor, or any combination of the above. More specific examples (non-exhaustive list) of readable storage media include: an electrical connection with one or more wires, a portable disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above.

[0122] The computer program may be written in any combination of one or more programming languages ​​to write program codes for performing the operations of the disclosed embodiments, including object-oriented programming languages ​​such as Java, C++, etc., and conventional procedural programming languages ​​such as "C" or similar programming languages. The program code may be executed entirely on the user's computer device, partially on the user's device, as a separate software package, partially on the user's computer device and partially on a remote computer device, or entirely on a remote computer device or server.

[0123] The above description is only a preferred embodiment of the present disclosure and an explanation of the technical principles used. Those skilled in the art should understand that the scope of disclosure involved in the present disclosure is not limited to the technical solutions formed by a specific combination of the above technical features, but should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the above disclosed concept. For example, the above features are replaced with the technical features with similar functions disclosed in the present disclosure (but not limited to) by each other to form a technical solution.

[0124] In addition, although each operation is described in a specific order, this should not be understood as requiring these operations to be performed in the specific order shown or in a sequential order. Under certain circumstances, multitasking and parallel processing may be advantageous. Similarly, although some specific implementation details are included in the above discussion, these should not be interpreted as limiting the scope of the present disclosure. Some features described in the context of a separate embodiment can also be implemented in a single embodiment in combination. On the contrary, the various features described in the context of a single embodiment can also be implemented in multiple embodiments individually or in any suitable sub-combination mode.

[0125] The above description is only a specific embodiment of the present disclosure, so that those skilled in the art can understand or implement the present disclosure. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present disclosure. Therefore, the present disclosure will not be limited to the embodiments described herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A temperature simulation method for a resistor under impulse current, characterized in that: include: Constructing a geometric model of the resistor based on actual size parameters of the resistor, and determining material parameters of the resistor as material parameters of the geometric model; Constructing the current field and temperature field of the geometric model, coupling the current field with the temperature field, and obtaining an electrothermal coupling model corresponding to the resistor; Constructing the boundary conditions of the electrothermal coupling model based on the current waveform parameters of the target impulse current applied to the resistor; Calculating the temperature field data of the electrothermal coupling model under the material parameters and the boundary conditions to obtain the spatiotemporal distribution data of the temperature field; The time-space distribution data is analyzed to obtain temperature distribution data and temperature change data of the resistor under the action of the target impulse current.

2. The method according to claim 1, characterized in that The step of constructing a geometric model of the resistor based on actual size parameters of the resistor includes: Construct a three-dimensional model of the resistor based on the actual size parameters of the resistor; Meshing the three-dimensional model to obtain a geometric model of the resistor; The mesh size of each region in the geometric model is negatively correlated with the structural complexity of the region.

3. The method according to claim 1, characterized in that The step of constructing the boundary conditions of the electrothermal coupling model based on the current waveform parameters of the target inrush current applied to the resistor comprises: Setting the current waveform parameters of the target impulse current as the inlet boundary conditions of the electrothermal coupling model, setting the target end face of the resistor as the current inlet, and setting the end face opposite to the target end face of the resistor as the ground end face; The outer boundary of the resistor is set as a natural convection boundary, the convection heat transfer coefficient of the resistor is set as a preset convection heat transfer coefficient, and the initial temperature of the resistor is set as a preset temperature.

4. The method according to claim 1, characterized in that: The step of calculating the temperature field data of the electrothermal coupling model under the material parameters and the boundary conditions to obtain the spatiotemporal distribution data of the temperature field includes: Solving the current field equation of the electrothermal coupling model based on the current waveform parameters and the material parameters to obtain the current density and the electric field intensity of the electric field generated by the geometric model under the action of the target impulse current; Based on the current density and the electric field strength, the temperature field equation of the electrothermal coupling model is solved to obtain the spatiotemporal distribution data of the temperature field under the target impulse current.

5. The method according to claim 4, characterized in that The current field equation includes: in, represents the differential operator; J represents the current density; J c Represents conduction current; J d represents displacement current; E represents electric field intensity; j represents an imaginary operator, which is used to obtain the imaginary part of the calculation result; D represents electric displacement; V represents electric potential; ε0 represents vacuum dielectric constant; ω represents the angular frequency of current; δ represents dielectric loss angle; ε represents the relative dielectric constant of the resistor; σ represents the conductivity of the resistor; The conduction current, the displacement current, the electric field strength, the electric displacement, the electric potential and the angular frequency are determined by the current waveform parameters of the target impulse current; the relative dielectric constant and the conductivity are determined by the material parameters of the resistor.

6. The method according to claim 4, characterized in that The temperature field equation includes: Wherein, T represents the temporal and spatial distribution data of the temperature field; k represents the thermal conductivity of the resistor; C p represents the specific heat capacity of the resistor at normal pressure; ρ represents the density of the resistor; t represents the time; Q represents the heating power per unit volume of the geometric model; Re represents a real number operator, which is used to obtain the real number part of the calculation result; The thermal conductivity, the specific heat capacity at normal pressure and the density are determined by the material parameters of the resistor; The expression for convective heat transfer at the interface between the outer boundary of the geometric model of the resistor and the air includes: -n·q=h(T1-T) Among them, n represents the direction vector; h represents the convective heat transfer coefficient; T1 represents the air temperature; and q represents the heat flux density.

7. The method according to claim 1, characterized in that The expressions of the current waveform parameters of the target impact current include: t p =ln(β / α)(β-α); Where i(t) represents the current waveform parameters at time t; I0 ​​represents the current amplitude; α and β are time constants; e -βt Determines the rising part of the function; e -αt Determines the attenuation part of the function; η represents the peak correction factor; t p Indicates the peak time.

8. A temperature simulation device for a resistor under impulse current, characterized in that: include: A first construction module is used to construct a geometric model of the resistor based on actual size parameters of the resistor, and determine material parameters of the resistor as material parameters of the geometric model; A second construction module is used to construct the current field and temperature field of the geometric model, and couple the current field with the temperature field to obtain an electrothermal coupling model corresponding to the resistor; A third construction module, configured to construct boundary conditions of the electrothermal coupling model based on current waveform parameters of a target impulse current applied to the resistor; A calculation module, used for calculating the temperature field data of the electrothermal coupling model under the material parameters and the boundary conditions, and obtaining the spatiotemporal distribution data of the temperature field; The analysis module is used to analyze the time-space distribution data to obtain the temperature distribution data and temperature change data of the resistor under the action of the target impulse current.

9. A computer device, characterized in that: include: A memory and a processor, wherein a computer program is stored in the memory, and when the computer program is executed by the processor, the temperature simulation method of a resistor under an impulse current as described in any one of claims 1 to 7 is implemented.

10. A computer-readable storage medium, characterized in that: The storage medium stores a computer program, and when the computer program is executed by the processor, the temperature simulation method of a resistor under a surge current as described in any one of claims 1 to 7 is implemented.

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