Method, device and equipment for simulating temperature of resistance sheet under impulse current and medium

Abstract

The present disclosure relates to a temperature simulation method, device, equipment and medium of a resistance sheet under an impact current. The present disclosure constructs a geometric model of the resistance sheet based on actual size parameters of the resistance sheet, determines material parameters of the resistance sheet as material parameters of the geometric model; constructs a current field and a temperature field of the geometric model, couples the current field and the temperature field, and obtains an electro-thermal coupling model corresponding to the resistance sheet; constructs boundary conditions of the electro-thermal coupling model based on current waveform parameters of a target impact current applied to the resistance sheet; calculates temperature field data of the electro-thermal coupling model under the material parameters and the boundary conditions, and obtains space-time distribution data of the temperature field; and analyzes the space-time distribution data to obtain temperature distribution data and temperature change data of the resistance sheet under the target impact current, which can improve the accuracy and efficiency of resistance sheet temperature evaluation, avoid high-cost and long-period actual tests, reduce costs, and provide a scientific basis for the design of the resistance sheet.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of electric power, and particularly relates to a temperature simulation method and device of a resistance disc under an impulse current, equipment and a medium. BACKGROUND

[0002] Lightning arresters are an important part of protection equipment in power systems, mainly used to prevent lightning or other transient overvoltages from causing damage to power equipment, and the performance of lightning arresters directly affects the safety and reliability of power systems. Resistance discs are key functional elements in lightning arresters, and the temperature rise characteristics of resistance discs are crucial to the stability and safety of lightning arresters.

[0003] Under the action of lightning and other transient overvoltages, the resistance discs of lightning arresters will withstand high-intensity impulse currents, which will cause the temperature of the resistance discs to rise, affecting the material properties of the resistance discs, and thus affecting the overall performance and service life of the lightning arresters. Therefore, accurately evaluating the temperature variation characteristics of resistance discs under impulse currents is of great significance for optimizing the design of lightning arresters, selecting appropriate materials, and ensuring their reliability.

[0004] Currently, temperature evaluation of lightning arrester resistance discs is mainly carried out through experimental measurement, which is not only costly and time-consuming, but also has low evaluation accuracy, making it difficult to meet the performance evaluation needs of lightning arrester resistance discs in the rapidly developing power industry. SUMMARY

[0005] To solve the above technical problems, the present disclosure provides a temperature simulation method and device of a resistance disc under an impulse current, equipment and a medium.

[0006] The first aspect of the present disclosure provides a temperature simulation method of a resistance disc under an impulse current, comprising:

[0007] constructing a geometric model of the resistance disc based on actual size parameters of the resistance disc, and determining material parameters of the resistance disc as material parameters of the geometric model;

[0008] constructing a current field and a temperature field of the geometric model, coupling the current field and the temperature field, and obtaining an electro-thermal coupling model corresponding to the resistance disc;

[0009] constructing boundary conditions of the electro-thermal coupling model based on current waveform parameters of a target impulse current applied to the resistance disc;

[0010] calculating temperature field data of the electro-thermal coupling model under the material parameters and the boundary conditions, and obtaining spatiotemporal distribution data of the temperature field;

[0011] analyzing the spatiotemporal distribution data to obtain temperature distribution data and temperature variation data of the resistance disc under the action of the target impulse current.

[0012] The second aspect of the present disclosure provides a temperature simulation device of a resistance piece under an impact current, comprising:

[0013] A first construction module is configured to construct a geometric model of the resistance piece based on actual size parameters of the resistance piece, and determine material parameters of the resistance piece as material parameters of the geometric model;

[0014] A second construction module is configured to construct a current field and a temperature field of the geometric model, couple the current field and the temperature field, and obtain an electro-thermal coupling model corresponding to the resistance piece;

[0015] A third construction module is configured to construct a boundary condition of the electro-thermal coupling model based on a current waveform parameter of a target impact current applied to the resistance piece;

[0016] A calculation module is configured to calculate temperature field data of the electro-thermal coupling model under the material parameters and the boundary condition, and obtain space-time distribution data of the temperature field;

[0017] An analysis module is configured to analyze the space-time distribution data, and obtain temperature distribution data and temperature change data of the resistance piece under the target impact current.

[0018] The third aspect of the present disclosure provides a computer device, comprising a memory and a processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, the temperature simulation method of the resistance piece under the impact current of the first aspect can be realized.

[0019] The fourth aspect of the present disclosure provides a computer readable storage medium, and the storage medium stores a computer program, and when the computer program is executed by the processor, the temperature simulation method of the resistance piece under the impact current of the first aspect can be realized.

[0020] The technical solution provided by the present disclosure has the following advantages compared with the prior art:

[0021] The disclosure constructs a geometric model of the resistance sheet based on the actual size parameters of the resistance sheet, determines the material parameters of the resistance sheet as the material parameters of the geometric model, constructs a current field and a temperature field of the geometric model, couples the current field and the temperature field to obtain an electro-thermal coupling model corresponding to the resistance sheet, constructs a boundary condition of the electro-thermal coupling model based on the current waveform parameters of the target impulse current applied to the resistance sheet, calculates the temperature field data of the electro-thermal coupling model under the material parameters and the boundary condition to obtain the spatio-temporal distribution data of the temperature field, and analyzes the spatio-temporal distribution data to obtain the temperature distribution data and the temperature change data of the resistance sheet under the action of the target impulse current. The electro-thermal coupling model constructed by the current field and the temperature field of the resistance sheet simulates the temperature data of the resistance sheet under the action of the impulse current, and analyzes the temperature distribution data and the temperature change data of the resistance sheet under the action of the impulse current, which can improve the accuracy and efficiency of the resistance sheet temperature evaluation, avoid high-cost and long-period actual tests, significantly reduce the cost in the resistance sheet design verification process, provide a more accurate scientific basis for the material selection, structure design and thermal management of the lightning arrester resistance sheet, and further improve the stability and durability of the lightning arrester resistance sheet under extreme conditions. BRIEF DESCRIPTION OF DRAWINGS

[0022] The accompanying drawings, which are incorporated into and form a part of the specification, illustrate embodiments consistent with the present disclosure and, together with the description, serve to explain the principles of the disclosure.

[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or the prior art, brief descriptions will be given below to the drawings needed to be used in the embodiments or prior art descriptions. Obviously, for those skilled in the art, other drawings can also be obtained from these drawings without any creative effort.

[0024] Figure 1 is a flowchart of a temperature simulation method of a resistance sheet under an impulse current provided by an embodiment of the present disclosure;

[0025] Figure 2 is a schematic diagram of current waveform parameters of a target impulse current provided by an embodiment of the present disclosure;

[0026] Figure 3 is a schematic diagram of average temperature change of a resistance sheet provided by an embodiment of the present disclosure;

[0027] Figure 4 is a structural schematic diagram of a temperature simulation device of a resistance sheet under an impulse current provided by an embodiment of the present disclosure;

[0028] Figure 5 is a structural schematic diagram of a computer device provided by an embodiment of the present disclosure. DETAILED DESCRIPTION

[0029] In order to more clearly understand the above-mentioned purposes, features and advantages of the present disclosure, the solutions of the present disclosure will be further described below. It should be noted that the embodiments of the present disclosure and the features in the embodiments can be combined with each other without conflict.

[0030] In the following description, a large number of specific details are set forth in order to facilitate a thorough understanding of the present disclosure, but the present disclosure can also be implemented in other different manners from those described herein; obviously, the embodiments described in the specification are only a part of the embodiments of the present disclosure, and not all the embodiments.

[0031] It should be understood that each step recorded in the method embodiments of the present disclosure can be executed in different orders and / or in parallel. In addition, the method embodiments can include additional steps and / or omit the execution of the steps shown. The scope of the present disclosure is not limited in this respect.

[0032] It should be noted that, in this document, relational terms such as "first" and "second", and the like, are used solely to distinguish one entity or action from another entity or action, without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises", "comprising", or any other variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but can include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without more limitations, an element defined by the phrase "comprising a..." does not exclude the existence of additional identical elements in the process, method, article, or apparatus that includes the element.

[0033] It should be noted that the modification of "one" and "multiple" mentioned in the present disclosure is illustrative but not restrictive, and those skilled in the art should understand that, unless otherwise explicitly indicated in the context, it should be understood as "one or more".

[0034] The temperature simulation method of the resistance chip under the impact current provided by the embodiments of the present disclosure can be executed by a computer device, which can be understood as any device with processing and computing capabilities, which can include but is not limited to mobile terminals such as smart phones, notebook computers, tablet computers (PAD), etc., and fixed electronic devices such as digital TVs, desktop computers, etc.

[0035] In order to better understand the inventive concept of the embodiments of the present disclosure, the technical solutions of the embodiments of the present disclosure will be described below in conjunction with exemplary embodiments.

[0036] Figure 1is a flowchart of a temperature simulation method of a resistance disc under an impulse current provided by an embodiment of the present disclosure, as shown in the figure. The temperature simulation method of the resistance disc under the impulse current provided by the embodiment can include the following steps: Figure 1

[0037] Step 110, constructing a geometric model of the resistance disc based on actual size parameters of the resistance disc, and determining material parameters of the resistance disc as material parameters of the geometric model.

[0038] In the embodiment of the present disclosure, the resistance disc can be a resistance disc in a lightning arrester. The computer device can construct a geometric model of the resistance disc according to actual size parameters of the resistance disc, and determine material parameters of the resistance disc as material parameters of the geometric model.

[0039] The actual size parameters of the resistance disc can include parameters such as outer diameter, inner diameter, height, etc. The material parameters of the resistance disc can include parameters such as electrical conductivity, thermal conductivity, relative dielectric constant, density, thermal expansion coefficient, constant-pressure specific heat capacity, and thermal conductivity, etc.

[0040] In some embodiments, the computer device can construct a three-dimensional model of the resistance disc based on the actual size parameters of the resistance disc; and perform mesh division on the three-dimensional model of the resistance disc to obtain the geometric model of the resistance disc, wherein the grid size of each region in the geometric model is negatively correlated with the structural complexity of the region. That is, the greater the structural complexity of the region, the smaller the grid of the region; the smaller the structural complexity of the region, the larger the grid of the region. In this way, the amount of calculation can be reduced, while ensuring the calculation accuracy and improving the calculation efficiency.

[0041] Step 120, constructing a current field and a temperature field of the geometric model, coupling the current field and the temperature field to obtain an electro-thermal coupling model corresponding to the resistance disc.

[0042] In the embodiment of the present disclosure, the computer device can construct a current field and a temperature field of the geometric model of the resistance disc, and then couple the current field and the temperature field to obtain an electro-thermal coupling model corresponding to the resistance disc.

[0043] The current field is a current field generated when the current passes through the resistance disc. The current passing through the resistance disc will generate heat, and the temperature field can be understood as a collection of temperatures at each position in the geometric model of the resistance disc, which is a function of time and space coordinates, and reflects the distribution of temperature in space and time.

[0044] Step 130, constructing boundary conditions of the electro-thermal coupling model based on current waveform parameters of a target impulse current applied to the resistance disc.

[0045] ​In this embodiment of the disclosure, the computer device can acquire the current waveform parameters of the target impact current applied to the resistor, for example, it can acquire the current waveform parameters of the target impact current in response to user input, and then construct the boundary conditions of the electrothermal coupling model based on the current waveform parameters of the target impact current applied to the resistor.

[0046] The target impulse current can be understood as a high-intensity impulse current.

[0047] For example, the expression for the current waveform parameters of the target impact current can be given by equation (1):

[0048]

[0049] t p =ln(β / α) / (β-α); (1)

[0050] Where i(t) represents the current waveform parameters at time t, in units of (A); I0 represents the current amplitude, in units of (A); α and β are time constants; e -βt Determines the rising part of the function; e -αt The decay part of the determination function; η represents the peak correction coefficient; tp represents the peak time.

[0051] For example, for a target impulse current a of 4 / 10μs and 100kA, take... I0 = 100kA, η = 0.32573, the expression for the current waveform parameters of the target impact current a can be given by equation (2):

[0052]

[0053] like Figure 2 As shown, Figure 2 This is a schematic diagram of the current waveform parameters of a target impact current. The horizontal axis represents time t in seconds (s), and the vertical axis represents the current waveform parameter i in amperes (A).

[0054] In some embodiments, the current waveform parameters of the target impulse current applied to the resistor can be set as the inlet boundary conditions of the electrothermal coupling model, the target end face of the resistor can be set as the current inlet, and the opposite end face of the target end face of the resistor can be set as the ground end face; that is, the target impulse current corresponding to the current waveform parameters enters from the current inlet of the resistor and flows out from the ground end face.

[0055] Set the outer boundary of the resistor to a natural convection boundary, set the convective heat transfer coefficient of the resistor to a preset convective heat transfer coefficient, and set the initial temperature of the resistor to a preset temperature.

[0056] The target end face can be any end face of the resistance sheet, and can be set as required, which is not limited herein.

[0057] The preset heat convection coefficient can be set as required, for example, 5 W / (m·K), which is not limited herein.

[0058] The preset temperature can be set as required, for example, 20℃, which is not limited herein.

[0059] In step 140, the temperature field data of the electro-thermal coupling model under the material parameters and the boundary conditions are calculated to obtain the space-time distribution data of the temperature field.

[0060] In the embodiments of the present disclosure, the computer device can calculate the temperature field data of the electro-thermal coupling model under the material parameters and the boundary conditions of the geometric model of the resistance sheet to obtain the space-time distribution data of the temperature field. The space-time distribution data of the temperature field can include the temperature of each position in the geometric model of the resistance sheet at each time under the action of the target impulse current.

[0061] In some embodiments, calculating the temperature field data of the electro-thermal coupling model under the material parameters and the boundary conditions to obtain the space-time distribution data of the temperature field can include steps 1401-1402:

[0062] In step 1401, the current field equation of the electro-thermal coupling model is solved based on the current waveform parameters and the material parameters to obtain the current density and the electric field intensity of the electric field generated by the geometric model under the action of the target impulse current.

[0063] The current density is a physical quantity describing the strength and direction of the current at a certain point in the circuit, which is a vector. The magnitude of the current density is equal to the electric quantity passing through a unit area per unit time, and the direction vector is the normal vector of the corresponding section of the unit area, which points to the direction determined by the passage of positive charges through the section. The unit is ampere per square meter A / ㎡.

[0064] The electric field intensity is a physical quantity used to represent the strength and direction of the electric field, denoted as E.

[0065] For example, the current field equation can include formula (3):

[0066]

[0067] wherein ∇ represents a differential operator; J represents the current density; J c represents the conduction current; and J drepresents the displacement current; E represents the electric field intensity; j represents the imaginary operator, which is used to take the imaginary part of the calculation result; D represents the electric displacement; V represents the electric potential; ε0 represents the vacuum permittivity; ω represents the angular frequency of the current, with the unit of (rad / s) ω = 2πf, f represents the current frequency; δ represents the dielectric loss angle; ε represents the relative permittivity of the resistor sheet; σ represents the conductivity of the resistor sheet, with the unit of (S / m);

[0068] The conduction current, the displacement current, the electric field intensity, the electric displacement, the electric potential and the angular frequency are determined by the current waveform parameters of the target impulse current; and the relative permittivity and the conductivity are determined by the material parameters of the resistor sheet.

[0069] The differential operator is an operator of a function of differential operation.

[0070] Step 1402 solves a temperature field equation of the electro-thermal coupling model based on the current density and the electric field intensity to obtain the spatio-temporal distribution data of the temperature field under the action of the target impulse current.

[0071] For example, the temperature field equation can include formula (4):

[0072]

[0073] wherein T represents the spatio-temporal distribution data of the temperature field; k represents the thermal conductivity of the resistor sheet, with the unit of W / (m·K); C p represents the constant-pressure specific heat capacity of the resistor sheet, with the unit of J / (kg·K); ρ represents the density of the resistor sheet, with the unit of (kg / m 3 ); t represents the time; Q represents the unit volume heat generation power of the geometric model, with the unit of (W / m 3 ); Re represents the real number operator, which is used to take the real part of the calculation result and convert the complex result into a physically meaningful quantity; and the thermal conductivity, the constant-pressure specific heat capacity and the density are determined by the material parameters of the resistor sheet.

[0074] The expression of the convective heat transfer on the interface between the outer boundary of the geometric model of the resistor sheet and the air (the outer boundary of the field) can be formula (5):

[0075] -n·q = h (T1-T)

[0076]

[0077] wherein n represents the direction vector; h represents the convective heat transfer coefficient, with the unit of W / (m 2 ·K); T1 represents the air temperature; and q represents the heat flux density, with the unit of (W / m 2 ).

[0078] At step 150, the spatio-temporal distribution data is analyzed to obtain temperature distribution data and temperature change data of the resistance disc under the target impulse current.

[0079] In the embodiments of the present disclosure, the computer device can analyze the spatio-temporal distribution data of the temperature field to obtain the temperature distribution data and the temperature change data of the resistance disc under the target impulse current.

[0080] The temperature distribution data can be understood as the temperature of each position of the resistance disc at each time under the target impulse current.

[0081] The temperature change data can be understood as the temperature change data of each position of the resistance disc during the action of the target impulse current. For example, the temperature change data can be the average temperature change data of the resistance disc, such as Figure 3 as shown in Figure 3 is a schematic diagram of the average temperature change of a resistance disc, the horizontal axis represents the time in microseconds (μs), and the vertical axis represents the average temperature of the resistance disc in degrees Celsius (℃).

[0082] Therefore, the temperature data of the resistance disc under the action of the impulse current can be simulated by the electro-thermal coupling model constructed by the current field and the temperature field of the resistance disc, and the temperature distribution data and the temperature change data of the resistance disc under the action of the impulse current can be analyzed and obtained, which can improve the accuracy and efficiency of the resistance disc temperature evaluation, avoid high-cost and long-period actual tests, significantly reduce the cost in the resistance disc design verification process, and provide a more accurate scientific basis for the material selection, structure design and thermal management of the lightning arrester resistance disc, thereby improving the stability and durability of the lightning arrester resistance disc under extreme conditions.

[0083] Figure 4 is a structural schematic diagram of a temperature simulation device of a resistance disc under an impulse current provided by the embodiments of the present disclosure. The device can be understood as the above-mentioned computer device or part of the functional modules in the above-mentioned computer device. As shown in Figure 4 the temperature simulation device 400 of the resistance disc under the impulse current includes:

[0084] A first construction module 410 is configured to construct a geometric model of the resistance disc based on actual size parameters of the resistance disc, and determine material parameters of the resistance disc as material parameters of the geometric model.

[0085] A second construction module 420 is configured to construct a current field and a temperature field of the geometric model, couple the current field and the temperature field, and obtain an electro-thermal coupling model corresponding to the resistance disc.

[0086] A third construction module 430 is configured to construct boundary conditions of the electro-thermal coupling model based on current waveform parameters of a target impulse current applied to the resistance disc.

[0087] The computing module 440 is configured to calculate the temperature field data of the electro-thermal coupling model under the material parameters and the boundary conditions, to obtain the spatio-temporal distribution data of the temperature field.

[0088] The analyzing module 450 is configured to analyze the spatio-temporal distribution data, to obtain the temperature distribution data and the temperature change data of the resistance sheet under the target impact current.

[0089] Optionally, the first constructing module comprises:

[0090] The constructing submodule is configured to construct the three-dimensional model of the resistance sheet based on the actual size parameters of the resistance sheet.

[0091] The dividing submodule is configured to divide the three-dimensional model into grids, to obtain the geometric model of the resistance sheet.

[0092] Optionally, the grid size of each region in the geometric model is negatively correlated with the structural complexity of the region.

[0093] Optionally, the third constructing module comprises:

[0094] The first setting submodule is configured to set the current waveform parameters of the target impact current as the inlet boundary conditions of the electro-thermal coupling model, set the target end face of the resistance sheet as the current inlet, and set the opposite end face of the target end face of the resistance sheet as the grounding end face.

[0095] The second setting submodule is configured to set the outer boundary of the resistance sheet as the natural convection boundary, set the convective heat transfer coefficient of the resistance sheet as the preset convective heat transfer coefficient, and set the initial temperature of the resistance sheet as the preset temperature.

[0096] Optionally, the computing module comprises:

[0097] The first solving submodule is configured to solve the current field equation of the electro-thermal coupling model based on the current waveform parameters and the material parameters, to obtain the current density and the electric field intensity of the electric field generated by the geometric model under the target impact current.

[0098] The second solving submodule is configured to solve the temperature field equation of the electro-thermal coupling model based on the current density and the electric field intensity, to obtain the spatio-temporal distribution data of the temperature field under the target impact current.

[0099] Optionally, the current field equation comprises:

[0100]

[0101] wherein, ∇ represents a differential operator; J represents the current density; J c represents the conduction current; J drepresents the displacement current; E represents the electric field intensity; j represents the imaginary operator for taking the imaginary part of the result of the calculation; D represents the electric displacement; V represents the electric potential; ε0 represents the vacuum permittivity; ω represents the angular frequency of the current; δ represents the dielectric loss angle; ε represents the relative permittivity of the resistor; and σ represents the conductivity of the resistor;

[0102] The conduction current, the displacement current, the electric field intensity, the electric displacement, the electric potential, and the angular frequency are determined by the current waveform parameters of the target impulse current; and the relative permittivity and the conductivity are determined by the material parameters of the resistor.

[0103] The temperature field equation includes:

[0104]

[0105] wherein T represents the spatio-temporal distribution data of the temperature field; k represents the thermal conductivity of the resistor; C p represents the specific heat capacity of the resistor at normal pressure; ρ represents the density of the resistor; t represents the time; Q represents the unit volume heat generation power of the geometric model; and Re represents the real operator for taking the real part of the result of the calculation.

[0106] The thermal conductivity, the specific heat capacity at normal pressure, and the density are determined by the material parameters of the resistor.

[0107] The expression of the convective heat transfer on the interface between the outer boundary of the geometric model of the resistor and the air includes:

[0108] -n·q=h(T1-T)

[0109]

[0110] wherein n represents the direction vector; h represents the convective heat transfer coefficient; T1 represents the air temperature; and q represents the heat flux density.

[0111] The expression of the current waveform parameters of the target impulse current includes:

[0112]

[0113] t p =ln(β / α) / (β-α);

[0114] wherein i(t) represents the current waveform parameter at the time t; I0 represents the current amplitude; α and β are time constants; e -βt determines the rising part of the function; e -αt determines the decay part of the function; η represents the peak correction coefficient; t p represents the peak time.

[0115] The temperature simulation device for resistance disc under impact current provided by the embodiments of the present disclosure can implement the method of any one of the above embodiments, and has similar implementation manners and beneficial effects, which will not be repeated here.

[0116] The embodiments of the present disclosure also provide a computer device, which comprises a processor and a memory, wherein the memory stores a computer program which, when executed by the processor, can implement the method of any one of the above embodiments, and has similar implementation manners and beneficial effects, which will not be repeated here.

[0117] The computer device in the embodiments of the present disclosure can be understood as any device with processing and computing capabilities, which can include but is not limited to mobile terminals such as smart phones, notebook computers, tablet computers (PAD) and the like, and fixed electronic devices such as digital TVs, desktop computers and the like.

[0118] Figure 5 is a structural schematic diagram of a computer device provided by the embodiments of the present disclosure, as Figure 5 shown, the computer device 500 can include a processor 510 and a memory 520, wherein the memory 520 stores a computer program 521, which, when executed by the processor 510, can implement the method provided by any one of the above embodiments, and has similar implementation manners and beneficial effects, which will not be repeated here.

[0119] Of course, in order to simplify, Figure 5 only some of the components related to the present disclosure in the computer device 500 are shown, and components such as buses, input / output interfaces, input devices and output devices are omitted. In addition, according to specific application conditions, the computer device 500 can also include any other appropriate components.

[0120] The embodiments of the present disclosure provide a computer readable storage medium, which stores a computer program, when the computer program is executed by a processor, the method of any one of the above embodiments can be implemented, and has similar implementation manners and beneficial effects, which will not be repeated here.

[0121] The computer readable storage medium can be a combination of one or more computer readable media. The computer readable media can be a computer readable signal medium or a computer readable storage medium. The computer readable storage medium can include, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any suitable combination of the foregoing. More specific examples (a non-exhaustive list) of the computer readable storage medium include the following: an electrical connection having one or more wires, a portable disc, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or Flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0122] The computer program can be written in any combination of one or more programming languages, including an object oriented programming language such as Java, C++, or the like, and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The program code can execute entirely on the user's computer device, partly on the user's device, as a stand-alone software package, partly on the user's computer device and partly on a remote computer device or entirely on the remote computer device or server. The computer device can be a personal computer, a mobile device, a personal digital assistant, a mobile telephone, a web appliance, a network router, switch or bridge, or any computer device capable of executing program code.

[0123] The above description is only preferred embodiments of the present disclosure and a description of the principles of the technology applied. It should be understood by those skilled in the art that the scope of the disclosure involved in the disclosure is not limited to the technical solutions formed by the specific combinations of the above technical features, and also covers other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the above disclosed concept. For example, the technical solutions formed by replacing the above features with the technical features disclosed in the present disclosure (but not limited to) having similar functions.

[0124] In addition, although each operation is described in a particular order, this should not be understood as requiring the operations to be performed in the specific order shown or in a sequential order. In certain circumstances, multitasking and parallel processing can be advantageous. Similarly, although several implementation details are included in the above discussion, these should not be interpreted as limiting the scope of the present disclosure. Certain features described in the context of separate embodiments can also be combined in a single embodiment. Conversely, various features described in the context of a single embodiment can also be separated and implemented in multiple embodiments.

[0125] The foregoing is merely illustrative of the various implementations of the present disclosure and the general principles thereof. Numerous modifications can be made to these illustrations, and equivalents can be substituted therefor, without departing from the scope of the present disclosure. The specific embodiments commensurate with the specific application are intended to be illustrative only and not limiting of the scope of the application as set forth in the following claims.

Claims

1. A method for simulating the temperature of a resistive element under impulse current, characterized in that, include: A geometric model of the resistor is constructed based on the actual size parameters of the resistor, and the material parameters of the resistor are determined as the material parameters of the geometric model. Construct the current field and temperature field of the geometric model, and couple the current field and temperature field to obtain the electrothermal coupling model corresponding to the resistor. The boundary conditions of the electrothermal coupling model are constructed based on the current waveform parameters of the target impact current applied to the resistor. The temperature field data of the electrothermal coupling model under the material parameters and the boundary conditions are calculated to obtain the spatiotemporal distribution data of the temperature field; By analyzing the spatiotemporal distribution data, the temperature distribution data and temperature change data of the resistor under the action of the target impact current are obtained; The construction of the geometric model of the resistor based on the actual size parameters of the resistor includes: A three-dimensional model of the resistor is constructed based on the actual size parameters of the resistor. The three-dimensional model is meshed to obtain the geometric model of the resistor sheet; In the geometric model, the mesh size of each region is negatively correlated with the structural complexity of the region; The boundary conditions for constructing the electrothermal coupling model based on the current waveform parameters of the target impact current applied to the resistor include: The current waveform parameters of the target impact current are set as the inlet boundary conditions of the electrothermal coupling model, the target end face of the resistor is set as the current inlet, and the opposite end face of the target end face of the resistor is set as the ground end face. The outer boundary of the resistor is set as a natural convection boundary, the convective heat transfer coefficient of the resistor is set as a preset convective heat transfer coefficient, and the initial temperature of the resistor is set as a preset temperature.

2. The method according to claim 1, characterized in that, The calculation of the temperature field data of the electrothermal coupling model under the material parameters and the boundary conditions, to obtain the spatiotemporal distribution data of the temperature field, includes: Based on the current waveform parameters and the material parameters, the current field equation of the electrothermal coupling model is solved to obtain the current density and electric field strength of the electric field generated by the geometric model under the action of the target impact current. Based on the current density and the electric field strength, the temperature field equation of the electrothermal coupling model is solved to obtain the spatiotemporal distribution data of the temperature field under the action of the target impact current.

3. The method according to claim 2, characterized in that, The current field equations include: in, J represents the differential operator; J represents the current density; J c Indicates conduction current; J d E represents displacement current; J represents electric field strength; j represents the imaginary operator, used to extract the imaginary part of the calculation result; D represents electric displacement; V represents electric potential; ε0 represents vacuum permittivity; ω represents the angular frequency of the current; δ represents the dielectric loss angle; ε represents the relative permittivity of the resistor; σ represents the conductivity of the resistor. The conduction current, the displacement current, the electric field strength, the electric displacement, the electric potential, and the angular frequency are determined by the current waveform parameters of the target impact current; the relative permittivity and the conductivity are determined by the material parameters of the resistive element.

4. The method according to claim 3, characterized in that, The temperature field equations include: Where T represents the spatiotemporal distribution data of the temperature field; k represents the thermal conductivity of the resistive element; C p ρ represents the specific heat capacity of the resistor at atmospheric pressure; t represents the density of the resistor; Q represents the heat generation power per unit volume of the geometric model; Re represents the real number operator used to extract the real part of the calculation result. The thermal conductivity, the specific heat capacity at atmospheric pressure, and the density are determined by the material parameters of the resistance element; The expression for convective heat transfer at the interface between the outer boundary of the geometric model of the resistive element and air includes: Where n represents the direction vector; h represents the convective heat transfer coefficient; T1 represents the air temperature; and q represents the heat flux density.

5. A temperature simulation device for a resistor under impulse current, characterized in that, include: The first construction module is used to construct a geometric model of the resistor based on the actual size parameters of the resistor, and to determine the material parameters of the resistor as the material parameters of the geometric model. The second construction module is used to construct the current field and temperature field of the geometric model, and couple the current field and the temperature field to obtain the electrothermal coupling model corresponding to the resistor. The third construction module is used to construct the boundary conditions of the electrothermal coupling model based on the current waveform parameters of the target impact current applied to the resistor. The calculation module is used to calculate the temperature field data of the electrothermal coupling model under the material parameters and the boundary conditions, and obtain the spatiotemporal distribution data of the temperature field; The analysis module is used to analyze the spatiotemporal distribution data to obtain the temperature distribution data and temperature change data of the resistor under the action of the target impact current; The first building module includes: A submodule is built to construct a three-dimensional model of the resistor based on its actual size parameters. A sub-module is used to mesh the three-dimensional model to obtain the geometric model of the resistor sheet; In the geometric model, the mesh size of each region is negatively correlated with the structural complexity of the region; The third building module includes: The first setting submodule is used to set the current waveform parameters of the target impact current as the inlet boundary condition of the electrothermal coupling model, set the target end face of the resistor as the current inlet, and set the opposite end face of the target end face of the resistor as the ground end face. The second setting submodule is used to set the outer boundary of the resistor to a natural convection boundary, set the convective heat transfer coefficient of the resistor to a preset convective heat transfer coefficient, and set the initial temperature of the resistor to a preset temperature.

6. A computer device, characterized in that, include: A memory and a processor, wherein the memory stores a computer program that, when executed by the processor, implements a method for simulating the temperature of a resistor under an inrush current as described in any one of claims 1-4.

7. A computer-readable storage medium, characterized in that, The storage medium stores a computer program, which, when executed by a processor, implements the method for simulating the temperature of a resistor under an inrush current as described in any one of claims 1-4.

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