Substrate processing apparatus and substrate processing method

Abstract

The invention relates to a substrate processing apparatus and a substrate processing method. A solvent supply unit of a substrate processing apparatus is disposed at a position higher than an opening in an upper surface of a processing tank, and supplies a vaporous solvent from an outer side of the processing tank to an inner side of the processing tank in a plan view. When the substrate is immersed in the processing liquid, the control unit performs a solvent supply operation that decompresses the inside of the chamber and supplies a vaporous solvent from the solvent supply unit. In a solvent supply state in which the pressure in the chamber is reduced and the solvent is supplied, the control unit causes the lifter to take out the substrate from the processing liquid in the processing tank, and thereafter discharges the processing liquid from the processing tank by opening the QDR valve. In the solvent supply state, the control unit lowers the substrate by the lifter to a lower position in the processing tank in which the processing liquid is not stored, and then lifts the substrate by the lifter.

Description

Technical Field

[0001] The present invention relates to a substrate processing device and a substrate processing method for processing a substrate. Examples of the substrate include semiconductor substrates, FPD (Flat Panel Display) substrates, photomask glass substrates, optical disk substrates, magnetic disk substrates, ceramic substrates, and solar cell substrates. Examples of FPD include liquid crystal display devices, organic EL (electroluminescence) display devices, and the like. Background Art

[0002] Conventional substrate processing devices include a chamber, a processing tank disposed in the chamber, and a holding portion for holding a substrate (see, for example, Japanese Patent Publication No. 2023-020268). The processing tank stores a processing liquid. The substrate held by the holding portion is raised and lowered between a lower position in the processing tank and an upper position in the chamber and above the processing tank.

[0003] In addition, the substrate processing apparatus includes a solvent spraying unit and a hydrophobic agent spraying unit. The solvent spraying unit and the hydrophobic agent spraying unit are respectively arranged in the chamber. The solvent spraying unit sprays vapor of isopropyl alcohol (IPA). The hydrophobic agent spraying unit sprays hydrophobic agent vapor.

[0004] The substrate held by the holding portion is immersed in the processing liquid in the processing tank. Afterwards, the chamber is decompressed, and IPA vapor is sprayed into the chamber from the solvent spraying portion. In this state, the substrate is lifted above the processing tank. As a result, the substrate is exposed to the atmosphere of IPA vapor, so that the processing liquid attached to the substrate is replaced with IPA (solvent). Afterwards, hydrophobic agent vapor is sprayed into the chamber from the hydrophobic agent spraying portion.

[0005] However, there is a possibility that IPA vapor is difficult to adhere to the substrate and the replacement process with IPA (solvent) is insufficient. For example, if a treatment liquid (such as pure water) remains on the substrate, the hydrophobic treatment (silylation treatment) will become insufficient. Therefore, it will become impossible to prevent pattern collapse well. Summary of the invention

[0006] The present invention has been made in view of such circumstances, and an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can facilitate the adhesion of a solvent to a substrate.

[0007] The present invention adopts the following structure to achieve such an object. That is, the substrate processing device for processing a substrate of the present invention is characterized in that it comprises: a processing tank that stores a processing liquid; a chamber that accommodates the processing tank; a pressure reducing pump that reduces the pressure in the chamber; a lifter that lifts and lowers the substrate in the chamber while holding the substrate; an opening and closing valve that discharges the processing liquid from the processing tank; a solvent supply unit that is provided in the chamber and is arranged at a position higher than an opening formed on the upper surface of the processing tank, and supplies a solvent in at least one of a mist shape and a droplet shape from the outside of the processing tank to the inside of the processing tank when viewed from above; and a control unit that controls the control unit to supply the processing liquid when the substrate is immersed in the processing liquid. A solvent supplying action is performed, that is, the pressure reducing pump is caused to reduce the pressure in the chamber, and the solvent supply unit is used to supply the solvent in at least one of a mist and a droplet shape. When the pressure in the chamber is reduced and the solvent is supplied, the control unit causes the lifter to take the substrate out of the processing liquid in the processing tank, and then, the processing liquid is discharged from the processing tank by opening the on-off valve. When in the solvent supplying state, the control unit performs a substrate lifting action, that is, the lifter lowers the substrate to a position in the processing tank where the processing liquid is not stored, and then, the lifter raises the substrate.

[0008] According to the substrate processing device of the present invention, the solvent supply unit supplies a solvent in at least one of a mist shape and a droplet shape. Thus, after the substrate is taken out from the processing liquid stored in the processing tank, the solvent can be attached to the substrate more easily than the solvent vapor. Therefore, the solvent can be efficiently attached to the substrate.

[0009] In addition, in the above-mentioned substrate processing device, preferably, during the substrate lifting action, when in the solvent supply state, the lifter lowers the substrate to a position in the processing tank, and the lifter makes the substrate stand by at the position in the processing tank for a preset lower standby time, and then, the lifter raises the substrate, and the lifter makes the substrate stand by at the position after the substrate is raised for a preset upper standby time, and the lower standby time is longer than the upper standby time.

[0010] For example, when a mist-like solvent is supplied, the substrate is raised and lowered in order to suppress uneven adhesion of the solvent. At this time, the lower standby time for the substrate to wait at the position in the processing tank is set to be longer than the upper standby time for the substrate to wait at the position after the substrate is raised. This is because, for example, when a mist-like solvent is supplied, the amount of solvent attached to the substrate is greater when the substrate is arranged in the processing tank than when the substrate is arranged in the chamber and is at a position above the processing tank. As a result, the solvent can be attached to the substrate more efficiently. That is, the consumption of the solvent can be reduced, and the processing time can be shortened.

[0011] In the above substrate processing apparatus, it is preferred that the substrate lifting operation is performed a plurality of times. The more the substrate lifting operation is repeated, the more uneven adhesion of the solvent can be suppressed.

[0012] In addition, in the above-mentioned substrate processing device, preferably, there is also a hydrophobic agent nozzle for supplying hydrophobic agent vapor into the chamber, and the control unit supplies the hydrophobic agent vapor to the substrate from the hydrophobic agent nozzle after performing the substrate lifting action and stopping the supply of the solvent.

[0013] Since the solvent supply unit supplies the solvent in at least one of a mist and a droplet, the solvent can be easily attached to the substrate. Therefore, it is possible to prevent the treatment liquid from remaining on the substrate due to insufficient replacement of the solvent. In addition, the treatment liquid remaining on the substrate prevents the hydrophobic agent from attaching to the substrate. Since the replacement of the solvent can be fully performed, the hydrophobic treatment based on the hydrophobic agent can be well performed.

[0014] In addition, in the above substrate processing apparatus, preferably, the control unit performs a second solvent supply operation after stopping the supply of the hydrophobic agent vapor, that is, the pressure reducing pump decompresses the chamber and supplies the solvent in at least one of a mist and a droplet form from the solvent supply unit, thereby washing away the hydrophobic agent and particles derived from the hydrophobic agent.

[0015] In the substrate processing apparatus, the second solvent supplying operation is preferably performed when the lifter makes the substrate standby at a position in the processing tank where the processing liquid is not stored. When rinsing the hydrophobic agent, etc., the amount of solvent attached to the substrate can be increased.

[0016] In addition, in the above-mentioned substrate processing device, preferably, when the control unit performs the second solvent supply action, the lifter lowers the substrate to the position in the processing tank, and the lifter makes the substrate stand by at the position in the processing tank for a preset second lower standby time, and then, the lifter raises the substrate, and the lifter makes the substrate stand by at the position after the substrate is raised for a preset second upper standby time, and the second lower standby time is longer than the second upper standby time.

[0017] For example, when a mist-like solvent is supplied, the substrate is raised and lowered in order to suppress uneven adhesion of the solvent. At this time, the lower standby time for the substrate to wait at the position in the processing tank is set to be longer than the upper standby time for the substrate to wait at the position after the substrate is raised. This is because, for example, when a mist-like solvent is supplied, the amount of solvent attached to the substrate is greater when the substrate is arranged in the processing tank than when the substrate is arranged in the chamber and is at a position above the processing tank. As a result, the solvent can be attached to the substrate more efficiently. That is, the consumption of the solvent can be reduced, and the processing time can be shortened.

[0018] In addition, the substrate processing method of the present invention is a substrate processing method of a substrate processing device, the substrate processing device comprising: a processing tank, which stores a processing liquid; a chamber, which accommodates the processing tank; a pressure reducing pump, which depressurizes the chamber; a lifter, which lifts and lowers the substrate in the chamber while holding the substrate; and an opening and closing valve, which discharges the processing liquid from the processing tank, the substrate processing method is characterized in that it includes: a solvent supply process, when the substrate is immersed in the processing liquid, the pressure reducing pump is used to depressurize the chamber, and the solvent in at least one of mist and droplet shapes is supplied from the solvent supply part; a substrate taking out process, when the solvent supply state is in which the pressure in the chamber is reduced and the solvent is supplied, the pressure reducing pump is used to supply the solvent. The lifter takes the substrate out of the processing liquid in the processing tank; a processing liquid discharging process, when in the solvent supply state and after the substrate taking-out process, the processing liquid is discharged from the processing tank by opening the on-off valve; and a substrate lifting process, when in the solvent supply state, the lifter lowers the substrate to a position in the processing tank where the processing liquid is not stored, and then the lifter raises the substrate, the solvent supply part is provided in the chamber, the solvent supply part is arranged at a position higher than the opening formed on the upper surface of the processing tank, and supplies the solvent in at least one of a mist shape and a droplet shape from the outside of the processing tank to the inside of the processing tank when viewed from above.

[0019] Effects of the Invention

[0020] According to the substrate processing apparatus and substrate processing method of the present invention, it is possible to easily cause the solvent to adhere to the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to illustrate the invention, several embodiments currently considered suitable are shown in the drawings, but it should be understood that the invention is not limited to the structures and methods shown in the drawings.

[0022] Figure 1 This is a longitudinal sectional view showing a schematic structure of a substrate processing apparatus according to Example 1.

[0023] Figure 2 It is a top view showing the spray nozzles of two solvent supply units.

[0024] Figure 3 It is a diagram for explaining the operation of the substrate processing apparatus according to the first embodiment.

[0025] Figure 4 It is a timing chart showing the operation of the substrate processing apparatus according to the first embodiment.

[0026] Figure 5 This is a timing chart for explaining three substrate raising and lowering operations in a solvent supply state.

[0027] Fig. 6A This is a graph showing experimental results obtained by comparing the amount of IPA attached to a substrate under four conditions when mist-like IPA was supplied. Figure 6B 2 is a diagram showing a state where a substrate is arranged at an upper position above a processing tank. Figure 6C This is a diagram showing a state where a substrate is arranged at a lower position in a processing tank.

[0028] Figure 7 This is a diagram for explaining step S08A of the second embodiment.

[0029] Fig. 8A , Figure 8B This is a timing chart for explaining the operation of the substrate processing apparatus according to the second embodiment.

[0030] Fig. 9 This is a longitudinal sectional view showing the schematic structure of a substrate processing apparatus according to a third embodiment.

[0031] Description of Reference Numerals

[0032] 1: Substrate processing equipment

[0033] 2: Processing tank

[0034] 2A: Open

[0035] 3: Chamber

[0036] 4: Lifter

[0037] 11: QDR valve

[0038] 17: Hydrophobic agent steam nozzle

[0039] 43: Pressure reducing pump

[0040] 61: Control Department

[0041] H2: Upper position

[0042] H3: Lower position

[0043] V1~V7: On / Off valve DETAILED DESCRIPTION

[0044] Example 1

[0045] Hereinafter, Embodiment 1 of the present invention will be described with reference to the drawings. Figure 1 1 is a longitudinal sectional view showing a schematic structure of a substrate processing apparatus 1 according to the first embodiment. Figure 2 It is a plan view showing the two spray nozzles 29 and 30 of the solvent supply unit 19 .

[0046] (1) Structure of substrate processing apparatus

[0047] Reference Figure 1 The substrate processing device 1 performs drying processing on a plurality of (e.g., 50 or 25) substrates W. Each substrate W is formed, for example, in the shape of a circular plate. A pattern of, for example, a component is formed on the front (surface or main surface) of each substrate W. In this case, the surface opposite to the front of the substrate W is called the back surface.

[0048] The substrate processing apparatus 1 includes a processing tank 2 storing a processing liquid, a chamber 3 accommodating the processing tank 2, an elevator 4, and two ejection pipes 5. The processing tank 2 is disposed at the lower part of the chamber 3 and is disposed away from the bottom surface of the chamber 3. An opening 2A is formed on the upper surface of the processing tank 2. The processing liquid overflowing from the opening 2A is stored at the bottom of the chamber 3.

[0049] The lifter 4 lifts and lowers the plurality of substrates W in the chamber 3 while holding the plurality of substrates W. The lifter 4 includes a holding portion 4A for holding the plurality of substrates W in a vertical position, and a lifting portion 4B for lifting and lowering the holding portion 4A in a vertical direction (Z direction). The plurality of substrates W held by the holding portion 4A are arranged at equal intervals in the thickness direction of each substrate W. For example, Figure 1 In the figure, the direction in which the multiple substrates W are arranged is the Y direction.

[0050] The lifting unit 4B includes, for example, an electric motor. The lifting unit 4B can move the plurality of substrates W held by the holding unit 4A to, for example, a handover position H1 above the chamber 3, an upper position H2 above the processing tank 2 in the chamber 3, and a lower position (immersion processing position) H3 in the processing tank 2. It should be noted that the upper position H2 is preferably a position where the lower end of each substrate W is higher than the two solvent supply units 19 described later. In addition, the upper position H2 may also be a height position where the two solvent supply units 19 are arranged between the center of each substrate W and the lower end of each substrate W.

[0051] Two discharge pipes 5 for supplying the processing liquid into the processing tank 2 are provided at the bottom of the processing tank 2. Each discharge pipe 5 is formed linearly along the Y direction in which the plurality of substrates W are arranged. Each discharge pipe 5 has a plurality of discharge ports arranged along the Y direction.

[0052] The front end of the treatment liquid piping 7 branches into two. Thus, the two front ends of the treatment liquid piping 7 are connected to the two ejection pipes 5, respectively. The base end of the treatment liquid piping 7 is connected to the treatment liquid supply source 9. The treatment liquid supply source 9 conveys, for example, pure water as the treatment liquid to the treatment liquid piping 7. Pure water can be, for example, deionized water (DIW). An on-off valve V1 is provided on the treatment liquid piping 7. The on-off valve V1 supplies pure water and stops the supply. For example, when the on-off valve V1 is opened, pure water is supplied from the two ejection pipes 5. In addition, when the on-off valve V1 is closed, the supply of pure water from the two ejection pipes 5 is stopped.

[0053] It should be noted that, as the treatment liquid, a diluted IPA liquid obtained by diluting an isopropyl alcohol (IPA) liquid with pure water may also be used. In addition, the two ejection pipes 5 may also be configured to selectively eject pure water and diluted IPA liquid.

[0054] In addition, the substrate processing apparatus 1 includes a QDR valve 11 disposed at the bottom of the processing tank 2. The QDR valve 11 discharges the processing liquid (e.g., pure water) from the processing tank 2. Specifically, the QDR valve 11 discharges the pure water in the processing tank 2 to the bottom surface in the chamber 3. When the QDR valve 11 is opened, the pure water in the processing tank 2 is quickly discharged to the bottom in the chamber 3. When the QDR valve 11 is closed, the pure water can be stored in the processing tank 2. It should be noted that the QDR valve 11 is equivalent to the on-off valve of the present invention.

[0055] The chamber 3 includes an opening 3A through which a plurality of substrates W pass, and an upper cover 13 that blocks the opening 3A. The opening 3A is provided at the top of the chamber 3. When the upper cover 13 is opened, a plurality of substrates W can pass through the opening 3A. When the upper cover 13 is closed, the space in the chamber 3 is closed.

[0056] In addition, the substrate processing apparatus 1 includes two inert gas nozzles 15, two hydrophobic agent vapor nozzles 17, and two solvent supply units (two nozzle rows) 19. The two inert gas nozzles 15, the two hydrophobic agent vapor nozzles 17, and the two solvent supply units 19 are respectively provided in the chamber 3. It should be noted that the solvent supply unit 19 is equivalent to the solvent supply unit of the present invention. The hydrophobic agent vapor nozzle 17 is equivalent to the hydrophobic agent nozzle of the present invention.

[0057] Between the upper cover 13 and the processing tank 2, two inert gas nozzles 15, two hydrophobic agent steam nozzles 17 and two solvent supply parts 19 are arranged in order from the top. Specifically, the two inert gas nozzles 15 are arranged near the upper cover 13. In addition, the two inert gas nozzles 15 are arranged between the upper cover 13 and the two hydrophobic agent steam nozzles 17. The two hydrophobic agent steam nozzles 17 are arranged between the two inert gas nozzles 15 and the two solvent supply parts 19.

[0058] The two solvent supply parts 19 are arranged between the two hydrophobic agent vapor nozzles 17 and the processing tank 2. The two solvent supply parts 19 are arranged at a position higher than the opening 2A formed on the upper surface of the processing tank 2. The two solvent supply parts 19 are arranged near the outer edge of the opening 2A of the processing tank 2, that is, near the upper end of the side wall of the processing tank 2.

[0059] Each solvent supply unit 19 supplies a mist-like solvent from the outside of the processing tank 2 (or the opening 2A) to the inside of the processing tank 2 in a plan view. Figure 2 As shown, two solvent supply units 19 are arranged on both sides of the processing tank 2 (or opening 2A) in a plan view. Two inert gas nozzles 15 are also arranged on both sides of the processing tank 2 in a plan view. Two hydrophobic agent vapor nozzles 17 are also arranged on both sides of the processing tank 2 in a plan view.

[0060] The two inert gas nozzles 15 and the two hydrophobic agent steam nozzles 17 extend linearly in the Y direction. Each inert gas nozzle 15 and each hydrophobic agent steam nozzle 17 is formed in a tubular shape. Each inert gas nozzle 15 and each hydrophobic agent steam nozzle 17 has a plurality of nozzles arranged in the Y direction.

[0061] The two inert gas nozzles 15 supply inert gas to the chamber 3 respectively. The front end of the supply pipe 21 branches into two. Figure 1 As shown, two front end portions of the supply pipe 21 are respectively connected to two inert gas nozzles 15. The base end of the supply pipe 21 is connected to a first inert gas supply source 23. The first inert gas supply source 23 delivers, for example, nitrogen gas as an inert gas to the supply pipe 21. An on-off valve V2 is provided on the supply pipe 21. The on-off valve V2 supplies and stops the inert gas.

[0062] Two hydrophobic agent vapor nozzles 17 supply hydrophobic agent vapor into the chamber 3, respectively. The front end of the supply pipe 25 branches into two. Thus, the two front ends of the supply pipe 25 are connected to the two hydrophobic agent vapor nozzles 17, respectively. The base end of the supply pipe 25 is connected to the hydrophobic agent vapor supply source 27. The hydrophobic agent vapor supply source 27 transports the hydrophobic agent vapor to the supply pipe 25. The hydrophobic agent vapor is generated by evaporating the liquid hydrophobic agent by the heater. The hydrophobic agent vapor may also contain an inert gas (such as nitrogen) as a carrier gas. An opening and closing valve V3 is provided on the supply pipe 25. The opening and closing valve V3 supplies and stops the hydrophobic agent vapor. The hydrophobic agent modifies the surface of the substrate W into hydrophobicity. The hydrophobic agent may use, for example, a silicon-based hydrophobic agent or a metal-based hydrophobic agent. The hydrophobic agent is also called a silylating agent.

[0063] The two solvent supply units 19 supply mist-like solvents into the chamber 3 , respectively. Figure 2 The first solvent supply unit 19 includes a plurality of spray nozzles 29 arranged along the Y direction. The second solvent supply unit 19 includes a plurality of spray nozzles 30 arranged along the Y direction. Each of the spray nozzles 29 and 30 is composed of a two-fluid nozzle. The two-fluid nozzle is a nozzle that mixes a solvent with an inert gas and sprays a mist-like solvent. That is, the solvent is sprayed by the two-fluid nozzle.

[0064] The front end of the solvent supply pipe 31 is connected to each spray nozzle 29, 30 (solvent supply unit 19). The front end of the solvent supply pipe 31 branches into six when the solvent supply unit 19 has six spray nozzles 29, 30, for example. For example, the six front ends are connected to the six spray nozzles 29, 30, respectively. The base end of the solvent supply pipe 31 is connected to a solvent supply source 33. The solvent supply source 33 transports, for example, isopropyl alcohol (IPA) liquid as a solvent (organic solvent). The solvent is preferably hydrophilic. An on-off valve V4 is provided on the solvent supply pipe 31. The on-off valve V4 supplies the solvent and stops the supply.

[0065] In addition, the front end portion of the inert gas supply pipe 35 is connected to each spray nozzle 29, 30 (solvent supply unit 19). Similarly, the front end portion of the inert gas supply pipe 35 branches into six when the solvent supply unit 19 has six spray nozzles 29, 30, for example. For example, the six front ends of the inert gas supply pipe 35 are connected to the six spray nozzles 29, 30, respectively. The base end of the inert gas supply pipe 35 is connected to the second inert gas supply source 37. The second inert gas supply source 37 transports, for example, nitrogen as the inert gas. An on-off valve V5 is provided on the inert gas supply pipe 35. The on-off valve V5 supplies the inert gas and stops the supply.

[0066] In addition, the substrate processing apparatus 1 includes a pressure reducing pump 43. An exhaust port 39 is provided on the side wall of the chamber 3. The exhaust port 39 is arranged on the lower side of a shield plate 49 described later. An exhaust pipe 41 is connected to the exhaust port 39. An opening and closing valve V6 and a pressure reducing pump 43 are provided on the exhaust pipe 41 in order from the exhaust port 39 side. The pressure reducing pump 43 exhausts the gas in the chamber 3, thereby reducing the pressure in the chamber 3.

[0067] In addition, a discharge port 45 is provided on the bottom wall of the chamber 3. A discharge pipe 47 is connected to the discharge port 45. An opening and closing valve V7 is provided on the discharge pipe 47. When the opening and closing valve V7 is opened, liquid such as the processing liquid stored at the bottom of the chamber 3 is discharged through the discharge port 45 and the discharge pipe 47. When the opening and closing valve V7 is closed, liquid such as the processing liquid is not discharged from the chamber 3.

[0068] In addition, the chamber 3 is provided with a shield 49. The shield 49 separates the upper space and the lower space in the chamber 3, and is provided slightly below the upper edge (or opening 2A) of the processing tank 2. The shield 49 is formed so as to surround the processing tank 2. There is a gap between the shield 49 and the outer wall of the processing tank 2 and between the shield 49 and the inner wall of the chamber 3. The processing liquid, gas, and mist solvent flow through the gap.

[0069] The substrate processing apparatus 1 includes a control unit 61 and a storage unit (not shown). The control unit 61 controls each structure of the substrate processing apparatus 1. The control unit 61 includes, for example, one or more processors such as a central processing unit (CPU). The storage unit includes, for example, at least one of a ROM (Read-Only Memory), a RAM (Random-Access Memory), and a hard disk. The storage unit stores a computer program required to control each structure of the substrate processing apparatus 1.

[0070] For example, the control unit 61 controls the lifter 4 to lift the plurality of substrates W and controls the pressure reducing pump 43 to reduce the pressure in the chamber 3. In addition, the control unit 61 discharges the processing liquid from the processing tank 2 to the bottom of the chamber 3 by opening the QDR valve 11. In addition, the control unit 61 operates the on-off valves V4 and V5 to supply the mist solvent from the solvent supply unit 19, and operates the on-off valve V3 to supply the hydrophobic agent vapor from the hydrophobic agent vapor nozzle 17 into the chamber 3.

[0071] (2) Operation of Substrate Processing Apparatus 1

[0072] Next, refer to Figure 3 , Figure 4 The operation of the substrate processing device 1 is described below. Figure 3 The illustration of the lifter 4 is omitted. Figure 3The exhaust operation performed by the pressure reducing pump 43 and the like is indicated by the reference symbol VAC. Figure 4 In the figure, reference symbol CL indicates a closed state of the opening and closing valve V2, etc., and reference symbol OP indicates an open state of the opening and closing valve V2, etc. In the following description, the plurality of substrates W are appropriately referred to as "substrates W".

[0073] [Step S01] First immersion treatment (carrying substrate into chamber)

[0074] Pure water is stored as a processing liquid in the processing tank 2. Pure water is supplied from the ejection pipe 5. The lifter 4 receives a plurality of substrates W from a transport robot (not shown) at the handover position H1 using the holding portion 4A. The lifter 4 lowers the substrate W from the handover position H1 to the lower position H3 in the processing tank 2. That is, the lifter 4 immerses the entire substrate W in the pure water in the processing tank 2. By immersing the substrate W in the pure water, the substrate W can be cleaned and prevented from drying. Thereafter, the opening 3A of the chamber 3 is closed by the upper cover 13.

[0075] [Step S02] Exhaust in the chamber

[0076] After that, the on-off valve V2 is opened to supply nitrogen gas from the inert gas nozzle 15 into the chamber 3. In addition, when the substrate W is immersed in the processing liquid, the pressure reducing pump 43 reduces the pressure in the chamber 3. That is, by operating the pressure reducing pump 43 and opening the on-off valve V6, the gas in the chamber 3 is exhausted through the exhaust port 39 and the exhaust pipe 41. As a result, the pressure in the chamber 3 is lower than the atmospheric pressure, that is, the reduced pressure state (negative pressure state).

[0077] The decompression pump 43 operates during steps S02 to S08. Similarly, the on-off valve V6 is open during steps S02 to S08. It should be noted that during steps S02 to S08 and in step S13, the interior of the chamber 3 is in a decompressed state.

[0078] [Step S03] First IPA supply (forming misty IPA atmosphere)

[0079] After that, the supply of nitrogen from the inert gas nozzle 15 is stopped by closing the on-off valve V2. In addition, when the substrate W is immersed in the processing liquid, the chamber 3 is depressurized while the mist of IPA is supplied from the solvent supply unit 19 (solvent supply operation). That is, the on-off valves V4 and V5 are opened to supply the mist of IPA from the solvent supply unit 19 into the chamber 3. As a result, the chamber 3 becomes an atmosphere of mist of IPA. It should be noted that during steps S03 to S06, the on-off valves V4 and V5 are opened.

[0080] In addition, the misty IPA can be contained in the pure water in the processing tank 2. Therefore, it can be said that it is an IPA liquid diluted with the pure water in the processing tank 2. Therefore, in step S04 described later, when the substrate W is taken out from the pure water containing IPA in the processing tank 2, it is possible to promote the replacement of the pure water attached to the substrate W with the IPA liquid.

[0081] [Step S04] First IPA supply (IPA replacement)

[0082] After that, when the pressure in the chamber 3 is reduced and the misty IPA is supplied (solvent supply state), the lifter 4 takes the substrate W out of the pure water in the processing tank 2. To be specific, the pressure in the chamber 3 and the supply of the misty IPA from the solvent supply unit 19 are continued. In this state, the lifter 4 lifts the substrate W from the pure water in the processing tank 2. That is, the lifter 4 raises the substrate W from the lower position H3 to the upper position H2.

[0083] When the substrate W is exposed to the misty IPA, a replacement process is performed in which the pure water attached to the substrate W is replaced with IPA. It should be noted that in step S04, the decompression pump 43 may be stopped and the opening and closing valve V6 may be closed. In this case, the decompression state is maintained.

[0084] [Step S05] First IPA supply (pure water released from treatment tank)

[0085] After that, pure water is discharged from the treatment tank 2 by opening the QDR valve 11. Specifically, after step S04 is performed, the chamber 3 is kept in a state of reducing the pressure and supplying mist-like IPA (solvent supply state). In this state, pure water is rapidly discharged from the treatment tank 2 to the bottom surface of the chamber 3 by opening the QDR valve 11. After the treatment tank 2 becomes empty, the QDR valve 11 is closed.

[0086] [Step S06] First IPA supply (substrate lifting action)

[0087] Thereafter, when the solvent is supplied, the lifter 4 performs a substrate lifting operation, that is, lowers the substrate W to the lower position H3 in the processing tank 2 where pure water is not stored, and then raises the substrate W. This will be described in detail. Figure 5 This is a timing chart for explaining three substrate raising and lowering operations in a solvent supply state.

[0088] In step S06, the substrate is lifted and lowered three times. Figure 5In the embodiment, the first substrate lifting action is performed during the time period t1 to t5. The second substrate lifting action is performed during the time period t5 to t9. The third substrate lifting action is performed during the time period t9 to t13. By performing the substrate lifting action, it is possible to suppress uneven adhesion of the misty IPA and make the IPA adhere evenly to the substrate W. The three substrate lifting actions perform the same action. Therefore, the first substrate lifting action is used as a representative for explanation.

[0089] exist Figure 5 Step S05 is performed before time point t1. At time points t1 to t2, the lifter 4 lowers the substrate W to the lower position H3 in the processing tank 2. Thereafter, at time points t2 to t3, the lifter 4 allows the substrate W to wait at the lower position H3 for a preset lower waiting time LT. Thereafter, at time points t3 to t4, the lifter 4 raises the substrate W to the upper position H2 in the chamber 3 and above the processing tank 2. Thereafter, at time points t4 to t5, the lifter 4 allows the substrate W to wait at the upper position H2 after the substrate W is raised for a preset upper waiting time UT. In addition, in this substrate lifting action, the lower waiting time LT is set to be longer than the upper waiting time UT.

[0090] When the lower standby time LT is longer than the upper standby time UT, IPA is more likely to adhere to the substrate W. Therefore, it is possible to prevent the replacement process with IPA from becoming insufficient and pure water from remaining on the substrate W. In the next step S07, hydrophobic agent vapor is supplied. Here, the pure water remaining on the substrate W prevents the hydrophobic agent from adhering to the substrate W. Since the replacement process with IPA can be fully performed, this situation can be prevented.

[0091] Afterwards, the second and third substrate lifting actions are performed at time points t5 to t13. Afterwards, the hydrophobic agent vapor supply action of the next step S07 is started at time point t13. It should be noted that, for example, the falling time (falling speed) at time points t1 to t2 is shorter (faster) than the rising time (rising speed) at time points t3 to t4. In this regard, the falling time may be the same as the rising time, or may be longer than the rising time.

[0092] It should be noted that in step S06, the substrate lifting action is performed three times. At this point, the substrate lifting action may also be performed once. In addition, the substrate lifting action may also be performed two or more times. That is, in step S06, the substrate lifting action may also be performed once or more times. It should be noted that in Figure 5 In FIG. 1 , reference symbol MD indicates a height position between the upper position H2 and the lower position H3. The solvent supply unit 19 may be arranged at the height position MD or in the vicinity thereof.

[0093] [Step S07] Supply of hydrophobic agent vapor

[0094] After that, the exhaust in the chamber 3 is continued. In addition, the supply of mist-like IPA from the solvent supply part 19 is stopped by closing the on-off valves V4 and V5. After that, hydrophobic agent vapor is supplied from the hydrophobic agent vapor nozzle 17 into the chamber 3 by opening the on-off valve V3. At this time, the lifter 4 lifts and lowers the substrate W in such a way that the substrate W passes between the two hydrophobic agent vapor nozzles 17. Thus, hydrophobic agent vapor is uniformly supplied to the entire substrate W. The supply of hydrophobic agent vapor replaces the IPA attached to the substrate W with a hydrophobic agent. The hydrophobic agent modifies the surface of the substrate W into hydrophobicity. It should be noted that in steps S04 to S06, since the replacement process with IPA can be fully carried out, the hydrophobic treatment can be fully carried out, thereby preventing the pattern from collapsing.

[0095] [Step S08] Second IPA supply

[0096] After the supply of the hydrophobic agent vapor is stopped, a mist of solvent is supplied from the solvent supply unit 19 (second solvent supply action). This action is described in detail. After step S07, the exhaust in the chamber 3 is continued. The supply of the hydrophobic agent vapor from the hydrophobic agent vapor nozzle 17 is stopped by closing the on-off valve V3. In addition, a mist of IPA is supplied from the solvent supply unit 19 by opening the on-off valves V4 and V5. As a result, the hydrophobic agent attached to the substrate W is replaced with IPA. That is, the hydrophobic agent attached to the substrate W is rinsed by IPA. In addition, the particles derived from the hydrophobic agent attached to the substrate W are rinsed by IPA. The particles are generated, for example, by direct contact between water and the hydrophobic agent.

[0097] [Step S09] Draining pure water out of the chamber

[0098] Afterwards, the pressure reducing pump 43 is stopped and the on-off valve V6 is closed. Thus, the exhaust in the chamber 3 is stopped. The supply of mist IPA from the solvent supply unit 19 is stopped by closing the on-off valves V4 and V5. In addition, nitrogen is supplied from the inert gas nozzle 15 to the chamber 3 by opening the on-off valve V2. Thus, the pressure in the chamber 3 is returned from the reduced pressure state to the atmospheric pressure. Afterwards, the pure water stored at the bottom of the chamber 3 is discharged to the outside of the chamber 3 through the discharge port 45 and the discharge pipe 47 by opening the on-off valve V7. When all the pure water is discharged from the bottom of the chamber 3 (after the chamber 3 becomes empty), the on-off valve V7 is closed. It should be noted that nitrogen is supplied during steps S09 to S11.

[0099] [Step S10] Cleaning of treatment tank (supply of cleaning liquid)

[0100] After that, nitrogen gas is continuously supplied from the inert gas nozzle 15. In this state, pure water is supplied from the ejection pipe 5 into the processing tank 2 as a cleaning liquid by opening the on-off valve V1. The inside of the processing tank 2 is cleaned by the pure water stored in the processing tank 2. It should be noted that when the pure water is stored in the processing tank 2, the pure water supplied from the ejection pipe 5 into the processing tank 2 can also overflow from the opening 2A of the processing tank 2.

[0101] [Step S11] Cleaning of treatment tank (discharge of cleaning liquid)

[0102] After that, nitrogen gas is continuously supplied from the inert gas nozzle 15. In this state, the supply of pure water from the ejection pipe 5 is stopped by closing the on-off valve V1. In addition, the pure water is rapidly discharged from the processing tank 2 to the bottom surface of the chamber 3 by opening the QDR valve 11. In addition, the pure water (cleaning liquid) stored at the bottom of the chamber 3 is discharged by opening the on-off valve V7. After the processing tank 2 becomes empty, the QDR valve 11 is closed. In addition, after the chamber 3 becomes empty, the on-off valve V7 is closed.

[0103] [Step S12] Second immersion treatment

[0104] After that, nitrogen gas is continuously supplied from the inert gas nozzle 15. In this state, the on-off valve V1 is opened to supply pure water from the ejection pipe 5 into the processing tank 2. When a predetermined amount of pure water is stored in the processing tank 2, the lifter 4 lowers the substrate W from the upper position H2 to the lower position H3. Then, the substrate W is immersed in the pure water in the processing tank 2 for a predetermined period of time. Thus, a cleaning process for further removing particles attached to the substrate W is performed.

[0105] [Step S13] Third (final) IPA supply (drying process)

[0106] After that, the supply of pure water from the discharge pipe 5 is stopped by closing the on-off valve V1. After that, the gas in the chamber 3 is discharged by opening the on-off valve V6 while operating the pressure reducing pump 43. Thus, the chamber 3 is in a reduced pressure state. After that, misty IPA is supplied from the solvent supply unit 19 by opening the on-off valves V4 and V5. After that, after the atmosphere of misty IPA is formed in the chamber 3, the lifter 4 lifts the substrate W from the pure water in the processing tank 2. That is, the lifter 4 raises the substrate W from the lower position H3 to the upper position H2. When the substrate W is exposed to the misty IPA, the pure water attached to the substrate W is replaced by IPA.

[0107] While the exhaust of the chamber 3 is continued by the pressure reducing pump 43 or the like, the supply of the misty IPA from the solvent supply unit 19 is stopped by closing the on-off valves V4 and V5. Since the supply of the misty IPA is stopped and the pressure in the chamber 3 is reduced, the IPA attached to the substrate W is actively volatilized and the substrate W is dried. During the drying process, nitrogen gas may be supplied from the inert gas nozzle 15 after the supply of the misty IPA is stopped.

[0108] [Step S14] Supply of nitrogen gas

[0109] The pressure reducing pump 43 is stopped and the on-off valve V6 is closed. In addition, the on-off valve V2 is opened to supply nitrogen gas from the inert gas nozzle 15. Thus, the pressure in the chamber 3 is returned from the reduced pressure state to the atmospheric pressure. After that, the pure water is released from the processing tank 2 by opening the QDR valve 11 and the on-off valve V7, and the pure water is discharged from the bottom of the chamber 3.

[0110] [Step S15] Unloading the substrate from the chamber

[0111] The opening 3A is opened by opening the upper cover 13. The lifter 4 lifts the substrate W held by the holding portion 4A from the upper position H2 to the delivery position H1. The substrate W lifted to the delivery position H1 is moved to the next destination by a transfer robot (not shown).

[0112] According to the present embodiment, a mist-like solvent (e.g., IPA) is supplied from the solvent supply unit 19. Thus, after the substrate W is taken out from the processing liquid (e.g., pure water) stored in the processing tank 2, the solvent can be attached to the substrate W more easily than the solvent vapor. Therefore, the solvent can be efficiently attached to the substrate W.

[0113] For example, when a mist-like solvent is supplied, the substrate W is raised and lowered in order to suppress uneven adhesion of the solvent. At this time, the lower standby time LT of the substrate W waiting at the lower position H3 in the processing tank 2 is set to be longer than the upper standby time UT of the substrate W waiting at the upper position H2 after the substrate W is raised. This is because, for example, when a mist-like solvent is supplied, the amount of solvent attached to the substrate W is greater when the substrate W is arranged at the lower position H3 in the processing tank 2 than when the substrate W is arranged at the upper position H2 above the processing tank 2 in the chamber 3. As a result, the solvent can be attached to the substrate W more efficiently. That is, the consumption of the solvent can be reduced, and the processing time can be shortened.

[0114] Here, experimental results are used to supplement the effects. Fig. 6A This is a graph showing experimental results obtained by comparing the amount of IPA attached to the substrate W under four conditions when mist-like IPA was supplied. Figure 6B This is a diagram showing a state where a substrate W is arranged at an upper position H2 above a processing bath 2 . Figure 6CFIG. 2 is a diagram showing a state where a substrate W is disposed at a lower position H3 in a processing tank 2. Figure 6B , Figure 6C The illustration of the lifter 4 is omitted. Figure 6B , Figure 6C In the process tank 2, no treatment liquid is stored. Fig. 6A In the above, the same processing time of IPA means the same supply amount of IPA.

[0115] exist Fig. 6A In the figure, the black triangle mark is when a substrate W is configured on Figure 6C The result is when mist-like IPA is supplied from the solvent supply unit 19 at the lower position H3 in the processing tank 2 shown in FIG. Figure 6B The result is when mist-like IPA is supplied from the solvent supply unit 19 at the upper position H2 above the treatment tank 2. Comparison of the two shows that the amount of IPA attached is greater in the case of the black triangle mark (lower position H3 in the treatment tank 2).

[0116] In addition, Fig. 6A In the figure, the black circle marks are when 50 substrates W are arranged on Figure 6C The result is when mist-like IPA is supplied from the solvent supply unit 19 at the lower position H3 in the processing tank 2 shown in FIG. Figure 6B The result is when mist-like IPA is supplied from the solvent supply unit 19 at the upper position H2 above the treatment tank 2. Comparison of the two also shows that the amount of IPA attached is greater in the case of the black circular mark (lower position H3 in the treatment tank 2).

[0117] As described above, when the substrate W is arranged at the lower position H3 in the processing tank 2 , the amount of IPA adhered is greater. This is considered to be because the misty IPA easily stays in the processing tank 2 .

[0118] Returning to the description of the effect of this embodiment, the substrate lifting operation is performed multiple times (for example, three times). The more the substrate lifting operation is repeated, the more uneven adhesion of the solvent can be suppressed.

[0119] In addition, the control unit 61 supplies hydrophobic agent vapor to the substrate W from the two hydrophobic agent vapor nozzles 17 in step S07. This has the following effects. Since the solvent is supplied in a mist form from the solvent supply unit 19, it is possible to make it easy for the solvent to adhere to the substrate W. Therefore, it is possible to prevent the processing liquid from remaining on the substrate W due to insufficient replacement of the solvent. In addition, the processing liquid remaining on the substrate W prevents the hydrophobic agent from adhering to the substrate W. Since the replacement of the solvent can be fully performed, the hydrophobic treatment based on the hydrophobic agent can be well performed.

[0120] Example 2

[0121] Next, a second embodiment of the present invention will be described with reference to the drawings. It should be noted that the description overlapping with the first embodiment will be omitted. Figure 7 This is a diagram for explaining step S08A of the second embodiment. Fig. 8A , Figure 8B It is a diagram for explaining the operation of the substrate processing apparatus 1 according to the second embodiment.

[0122] In Example 1, after the IPA attached to the substrate W is replaced with the hydrophobic agent by the hydrophobic agent vapor, the hydrophobic agent is washed out by the misty IPA. At this time, the misty IPA is supplied when the substrate W is located at the upper position H2. In this regard, the misty IPA may also be supplied when the substrate W is located at the lower position H3 of the processing tank 2 where no processing liquid (e.g., pure water) is stored. That is, instead of Figure 3 Step S08 shown in FIG. Figure 7 Step S08A shown.

[0123] [Step S08A] Second IPA supply (second solvent supply operation)

[0124] Reference Figure 7 After the supply of the hydrophobic agent vapor is stopped, the pressure reducing pump 43 is operated to reduce the pressure in the chamber 3, and the solvent supply unit 19 supplies a mist of solvent (second solvent supply operation). This operation is described in detail. After step S07, the exhaust in the chamber 3 is continued. The supply of the hydrophobic agent vapor from the hydrophobic agent vapor nozzle 17 is stopped by closing the on-off valve V3.

[0125] After that, misty IPA is supplied from the solvent supply unit 19 by opening the on-off valves V4 and V5. In addition, the lifter 4 lowers the substrate W from the upper position H2 to the lower position H3. That is, when the lifter 4 makes the substrate W standby (positioned) at the lower position H3 in the processing tank 2 where no processing liquid (such as pure water) is stored, the misty solvent is supplied from the solvent supply unit 19 (that is, the second solvent supply operation is performed). Since the misty IPA is supplied when the substrate W is on standby at the lower position H3, the amount of IPA attached to the substrate W can be increased.

[0126] like Fig. 8A As shown in FIG. 1 , the lifter 4 may lower the substrate W from the upper position H2 to the lower position H3 while the misty IPA is supplied from the solvent supply unit 19 by opening the on-off valves V4 and V5. Alternatively, the lifter 4 may lower the substrate W to the lower position H3 after the misty IPA is supplied from the solvent supply unit 19 by opening the on-off valves V4 and V5 (see FIG. 1 ). Fig. 8A The single dotted line shown by the reference numeral DL in the figure).

[0127] In addition, if Figure 8B As shown, the mist-like IPA may be supplied from the solvent supply unit 19 by opening the on-off valves V4 and V5 while the lifter 4 is lowering the substrate W to the lower position H3. In this case, when the hydrophobic agent vapor is supplied from the hydrophobic agent vapor nozzle 17, the substrate W starts to descend to the lower position H3. Alternatively, the mist-like IPA may be supplied from the solvent supply unit 19 after the lifter 4 has lowered the substrate W to the lower position H3, that is, when the substrate W is located at the lower position H3.

[0128] It should be noted that if Fig. 8A , Figure 8B As shown, in step S09, the lifter 4 may also raise the substrate W from the lower position H3 to the upper position H2.

[0129] According to the present embodiment, the control unit 61 performs a second solvent supply operation after stopping the supply of the hydrophobic agent vapor, that is, the pressure reducing pump 43 is used to reduce the pressure in the chamber 3, and a mist-like solvent is supplied from the solvent supply unit 19. In this way, the hydrophobic agent and particles derived from the hydrophobic agent can be washed away. In addition, the second solvent supply operation is performed when the lifter 4 makes the substrate W standby at the lower position H3 in the processing tank 2 where no processing liquid is stored. When washing the hydrophobic agent, etc., the amount of solvent attached to the substrate W can be increased. Therefore, the solvent can be efficiently attached to the substrate. In addition, as in the example Figure 5 Compared with the case where the substrate is lifted and lowered multiple times as shown, the processing time can be shortened.

[0130] Example 3

[0131] Next, Embodiment 3 of the present invention will be described with reference to the drawings. It should be noted that the description overlapping with Embodiments 1 and 2 will be omitted. Fig. 9 It is a longitudinal sectional view showing a schematic structure of a substrate processing apparatus 1 according to a third embodiment.

[0132] In the first embodiment, the two spray nozzles 29 and 30 of the solvent supply unit 19 supply the solvent (for example, IPA) in a mist form. In this regard, in the third embodiment, the spray nozzles 29 and 30 may supply the hydrophobic agent in a mist form.

[0133] Reference Fig. 9 The substrate processing apparatus 1 does not have Figure 1 The two hydrophobic agent vapor spray pipes 17 are shown. Therefore, the front end of the supply pipe 25 is connected to the solvent supply pipe 31 between the spray nozzles 29, 30 and the on-off valve V4. Specifically, the front end of the supply pipe 25 is connected to Figure 2 The branch pipe 65 shown is on the solvent supply pipe 31 between the opening and closing valve V4. The branch pipe 65 is a member that divides the solvent supply pipe 31 into the spray nozzle 29 side and the spray nozzle 30 side.

[0134] The base end of the supply pipe 25 is connected to the hydrophobic agent supply source 27A. The hydrophobic agent supply source 27A delivers the liquid of the hydrophobic agent to the supply pipe 25. The on-off valve V3 is provided on the supply pipe 25. It should be noted that heaters HT1 and HT2 may be provided between the on-off valve V4 and the solvent supply source 33 and between the on-off valve V3 and the hydrophobic agent supply source 27A, respectively. For example, the heater HT2 heats the liquid of the hydrophobic agent passing through the supply pipe 25 to a preset temperature from the outside of the supply pipe 25. The heater HT1 also heats the solvent to a preset temperature in the same manner.

[0135] With such a configuration, the two solvent supply units (two nozzle rows) 19 can selectively supply a mist-like solvent (eg, IPA) and a mist-like water-repellent agent into the chamber 3 .

[0136] The operation of the substrate processing apparatus 1 of this embodiment will be briefly described. Figure 3 In step S07 shown, the exhaust in the chamber 3 is continued. The supply of misty IPA from the two solvent supply parts 19 is stopped by closing the on-off valves V4 and V5. Thereafter, the misty hydrophobic agent is supplied from the two solvent supply parts 19 into the chamber 3 by opening the on-off valves V3 and V5. At this time, the lifter 4 lifts the substrate W so that the substrate W passes between the two solvent supply parts 19. The supply of the hydrophobic agent vapor replaces the IPA attached to the substrate W with the hydrophobic agent.

[0137] In addition, the action of lifting the substrate W can also be combined with Figure 5 The substrate lifting and lowering actions at time points t1 to t5 shown in the figure are performed in the same manner. That is, the action of lifting and lowering the substrate W may also be such that when the mist-like hydrophobic agent is supplied, the lifter 4 lowers the substrate W to the lower position H3 in the processing tank 2, and the lifter 4 makes the substrate W stand by for a preset lower standby time LT at the lower position H3, and then the lifter 4 raises the substrate W, and the lifter 4 makes the substrate W stand by for a preset upper standby time UT at the upper position H2 after the substrate W is raised. In addition, the lower standby time LT is set to be longer than the upper standby time UT. When the supply of the mist-like hydrophobic agent is stopped, the on-off valves V3 and V5 are closed.

[0138] According to this embodiment, since the hydrophobic agent is supplied in a mist form, the hydrophobic agent can be attached to the substrate W more easily than solvent vapor. Therefore, the hydrophobic agent can be efficiently attached to the substrate W. In addition, when the substrate W is raised and lowered while the hydrophobic agent is supplied in a mist form, the lower standby time LT is made longer than the upper standby time UT. Thus, more hydrophobic agent can be attached to the substrate W.

[0139] In addition, the solvent and the hydrophobic agent can be selectively sprayed from the spray nozzles 29 and 30 of the solvent supply unit 19. Figure 1As shown in the figure, it is assumed that there are two solvent supply parts 19 and two hydrophobic agent vapor nozzles 17 arranged at different heights. If the substrate W is passed between the two solvent supply parts 19 during the solvent spraying, and the substrate W is passed between the two hydrophobic agent vapor nozzles 17 during the hydrophobic agent spraying, there is a case where the lifting distance of the substrate W becomes longer. Therefore, there is a case where the height of the chamber 3 becomes longer. However, according to this embodiment, the height of the chamber 3 can be suppressed.

[0140] The present invention is not limited to the above-described embodiment, and can be implemented in the following modified forms.

[0141] (1) In step S08 of the first embodiment, when the misty IPA is supplied (second solvent supply operation), the substrate W is located at the upper position H2 and the substrate W is not raised or lowered. In this regard, when the misty IPA is supplied, the lifter 4 may lower the substrate W to the lower position H3 and then raise the substrate W (second substrate lifting operation).

[0142] In addition, the second substrate lifting action in step S08 of this modification example can also be Figure 5 The substrate lifting and lowering actions at time points t1 to t5 shown in the figure are performed in the same manner. That is, in the second substrate lifting and lowering action, when the misty IPA is supplied, the lifter 4 lowers the substrate W to the lower position H3 in the processing tank 2, and the lifter 4 makes the substrate W stand by for a preset lower standby time LT at the lower position H3, and then the lifter 4 raises the substrate W, and the lifter 4 makes the substrate W stand by for a preset upper standby time UT at the upper position H2 after the substrate W is raised. In addition, the lower standby time LT is set to be longer than the upper standby time UT.

[0143] For example, when a mist solvent is supplied, the substrate W is raised or lowered in order to suppress uneven adhesion of the solvent. At this time, the lower standby time LT in which the substrate W waits at the lower position H3 in the processing tank 2 is set to be longer than the upper standby time UT in which the substrate W waits at the upper position H2 after the substrate W is raised. This is because, for example, when a mist solvent is supplied, the amount of solvent attached to the substrate W is greater when the substrate W is arranged at the lower position H3 in the processing tank 2 than when the substrate W is arranged at the upper position H2 above the processing tank 2 in the chamber 3. As a result, the solvent can be attached to the substrate W more efficiently. That is, the consumption of the solvent can be reduced, and the processing time can be shortened. It should be noted that the lower standby time LT in step S08 is equivalent to the second lower standby time of the present invention. The upper standby time UT in step S08 is equivalent to the second upper standby time of the present invention.

[0144] (2) In step S13 of each of the above embodiments and modification (1), when the mist-like IPA is supplied, the substrate W is located at the upper position H2 and the substrate W does not move up or down. In this regard, step S13 may also be as follows: Figure 3 , Figure 5 At this time, the substrate lifting operation may be performed once or multiple times.

[0145] (3) In the above-mentioned embodiments and modifications, Figure 2 The two solvent supply units 19 shown are provided with spray nozzles 29 and 30. In this regard, the two solvent supply units 19 may also be provided with a plurality of nozzles (spray nozzles) for supplying droplet-shaped solvents (e.g., IPA) instead of the spray nozzles 29 and 30. Each nozzle does not spray a solvent continuously in a linear form, but sprays droplets. The nozzle is also called a single-fluid nozzle. Each solvent supply unit 19 may be configured to supply a solvent in at least one of a mist form and a droplet form.

[0146] (4) In the above-mentioned embodiments and modified examples (1) and (2), the spray nozzles 29 and 30 of the two solvent supply units 19 are formed by two-fluid nozzles. In this regard, the spray nozzles 29 and 30 may be formed by single-fluid nozzles. A single-fluid nozzle is a nozzle that uses the pressure of a liquid to form a mist instead of using a gas.

[0147] (5) In the above-mentioned embodiments and modifications, Figure 5 In the three substrate lifting actions, after the substrate W is raised to the upper position H2, the substrate W is placed on standby at the upper position H2. The height position at which the substrate W is placed on standby at the upper side may not be the same as the upper position H2. Figure 5 As shown in the figure, the position where the substrate W is waiting on the upper side may be, for example, position H2A near the upper position H2. In addition, the position where the substrate W is waiting on the upper side may be a height position such that the lower end of the substrate W is accommodated in the processing tank 2. It should be noted that the upper position H2 or position H2A is equivalent to the position after the substrate is raised in the present invention.

[0148] (6) In the above-mentioned embodiments and modifications, Figure 5 In the three substrate lifting actions, after the substrate W is lowered to the lower position H3, the substrate W is placed on standby at the lower position H3. The height position at which the substrate W is placed on standby at the lower side may not be the same as the lower position H3. The position at which the substrate W is placed on standby at the lower side may also be, for example, Figure 5 The position H3A near the lower position H3 is shown. It should be noted that the lower position H3 or the position H3A corresponds to the position in the processing tank of the present invention.

[0149] (7) In the above-mentioned embodiments and modifications, the substrate processing apparatus 1 includes the QDR valve 11 for discharging the processing liquid (e.g., pure water) from the processing tank 2. In this regard, the substrate processing apparatus 1 may also include a discharge pipe extending from the processing tank 2 to the outside of the chamber 3, and an on-off valve provided on the discharge pipe. Alternatively, by opening the on-off valve, the processing liquid may be directly discharged from the processing tank 2 to the outside of the chamber 3 without being stored at the bottom of the chamber.

[0150] (8) In each of the above-mentioned embodiments and modifications, the QDR valve 11 is closed in step S06. In this regard, the QDR valve 11 may be opened if the following relationship holds: when the substrate W is arranged at the lower position H3, the amount of IPA attached to the substrate W is greater than when the substrate W is arranged at the upper position H2.

[0151] (9) In the above-mentioned embodiments 1 and 2 and each modified example, two hydrophobic agent vapor nozzles 17 supply hydrophobic agent vapor into the chamber 3. Instead of the two hydrophobic agent vapor nozzles 17, two nozzle rows may be provided. The two nozzle rows each include a plurality of spray nozzles arranged along the Y direction. The spray nozzles of the two nozzle rows supply a mist of hydrophobic agent into the chamber 3.

[0152] The present invention can be embodied in other specific forms without departing from the spirit or essence thereof and, accordingly, reference should be made to the appended claims, rather than to the foregoing description, as indicating the scope of the invention.

Claims

1. A substrate processing device for processing a substrate, characterized in that: have: a treatment tank storing the treatment liquid; a chamber accommodating the processing tank; a pressure reducing pump for reducing the pressure in the chamber; an elevator that lifts and lowers the substrate within the chamber while holding the substrate; an on-off valve for discharging the treatment liquid from the treatment tank; a solvent supply unit provided in the chamber, arranged at a position higher than an opening formed on the upper surface of the processing tank, and supplying a solvent in at least one of a mist shape and a droplet shape from the outside of the processing tank to the inside of the processing tank in a plan view; and Control Department, The control unit performs a solvent supply operation when the substrate is immersed in the processing liquid, that is, causes the pressure reducing pump to reduce the pressure in the chamber and supplies the solvent in at least one of a mist form and a droplet form from the solvent supply unit. When the chamber is in a solvent supply state in which the solvent is supplied while the pressure is reduced in the chamber, the control unit causes the lifter to take the substrate out of the processing liquid in the processing tank, and then discharges the processing liquid from the processing tank by opening the on-off valve. In the solvent supply state, the control unit performs a substrate lifting operation, that is, the lifter lowers the substrate to a position in the processing tank where the processing liquid is not stored, and then the lifter raises the substrate.

2. The substrate processing device according to claim 1, characterized in that: In the substrate lifting action, when in the solvent supply state, the lifter lowers the substrate to a position in the processing tank, and the lifter makes the substrate stand by at the position in the processing tank for a preset lower standby time, and then the lifter raises the substrate, and the lifter makes the substrate stand by at the position after the substrate is raised for a preset upper standby time, The lower standby time is longer than the upper standby time.

3. The substrate processing device according to claim 2, characterized in that: The substrate lifting action is performed multiple times.

4. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that: A hydrophobic agent nozzle is also provided for supplying hydrophobic agent vapor into the chamber. The control unit supplies the hydrophobic agent vapor to the substrate from the hydrophobic agent nozzle after performing the substrate lifting operation and stopping the supply of the solvent.

5. The substrate processing device according to claim 4, characterized in that: After stopping the supply of the hydrophobic agent vapor, the control unit performs a second solvent supply operation, that is, causes the decompression pump to decompress the chamber and supplies the solvent in at least one of a mist and a droplet form from the solvent supply unit.

6. The substrate processing device according to claim 5, characterized in that: The second solvent supply operation is performed when the lifter makes the substrate stand by at a position in the processing tank where the processing liquid is not stored.

7. The substrate processing device according to claim 5, characterized in that: When the control unit performs the second solvent supply operation, the lifter lowers the substrate to a position in the processing tank, and the lifter makes the substrate stand by at the position in the processing tank for a preset second lower standby time, and then the lifter raises the substrate, and the lifter makes the substrate stand by at the position after the substrate is raised for a preset second upper standby time. The second lower standby time is longer than the second upper standby time.

8. A substrate processing method, which is a substrate processing method of a substrate processing device, wherein the substrate processing device comprises: a treatment tank storing the treatment liquid; a chamber accommodating the processing tank; a pressure reducing pump for reducing the pressure in the chamber; an elevator that lifts and lowers the substrate within the chamber while holding the substrate; and an on-off valve for discharging the treatment liquid from the treatment tank, The substrate processing method is characterized by comprising: a solvent supplying step of causing the decompression pump to decompress the chamber while the substrate is immersed in the processing liquid, and supplying the solvent in at least one of a mist and a droplet form from a solvent supplying unit; a substrate taking-out step, when the chamber is in a solvent supplying state in which the solvent is supplied while the pressure is reduced in the chamber, causing the lifter to take the substrate out of the processing liquid in the processing tank; a process liquid discharging step of discharging the process liquid from the process tank by opening the on-off valve when the solvent is supplied and after the substrate taking-out step is performed; and a substrate lifting step, in which, when the solvent is supplied, the substrate is lowered by the lifter to a position in the processing tank where the processing liquid is not stored, and then the substrate is raised by the lifter, The solvent supply unit is disposed in the chamber. The solvent supply unit is disposed at a position higher than an opening formed on the upper surface of the processing tank, and supplies the solvent in at least one of a mist shape and a droplet shape from the outside of the processing tank to the inside of the processing tank in a plan view.

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