High-frequency wafer uniform corrosion device and method

Abstract

The high-frequency wafer uniform corrosion device comprises a corrosion inner groove, the corrosion inner groove is located in a corrosion outer groove, and the bottom of the corrosion inner groove is erected on the upper portion of the corrosion outer groove through a supporting rod; a circulating pump is arranged at the bottom of the outer corrosion tank; the input end of the circulating pump is communicated with a water pumping pipe; the input end of the water pumping pipe is communicated with the inside of the bottom of the corrosion outer tank; the output end of the circulating pump is communicated with a water outlet pipe, and the end part of the water outlet pipe penetrates through the corrosion inner tank; the circular frame drives the wafer body to rotate at the rotating speed of 2 + / -1rpm / min by utilizing the surging force of the water outlet pipe to the corrosive liquid, so that the corrosion frequency consistency is improved, the corrosion uniformity is easy to control even if the wafers with different specifications are subjected to corrosion processing, and the wafer body is not easy to deform when being fixed. And the second limiting plates on the left side and the right side can be synchronously adjusted only by adjusting the first limiting plate located on the upper portion, convenience and rapidness are achieved, and the yield is increased.

Description

Technical Field

[0001] The invention belongs to the technical field of chip manufacturing, and in particular relates to a high-frequency chip uniform etching device and method. Background Art

[0002] Piezoelectric vibrating pieces are components that work on the principle of the piezoelectric effect. By applying voltage to the piezoelectric material, it changes its shape and causes vibration. This vibration can be used in audio, sonar, and ultrasonic equipment, and can also be used as a sensor to convert mechanical vibrations into electrical signals. The piezoelectric effect can make certain materials generate electric charges when subjected to mechanical stress, and conversely, they will deform when an electric field is applied. This characteristic makes piezoelectric materials widely used in vibration sensors, drivers, ultrasonic equipment, audio systems and other fields.

[0003] At present, when etching ultra-high frequency chips, the chip is fixed in the water tank with a chip loading fixture, and the chip is statically etched with etching liquid. However, due to the development trend of miniaturization and high stability requirements of piezoelectric vibrating pieces, the accuracy and stability of traditional ground quartz chips are difficult to meet the current terminal market demand, such as Figure 8 As shown, the conventional static wafer etching method produces etching products with poor uniformity and low quality.

[0004] Patent CN208200753U discloses a wafer etching machine. Through the design of an electric push rod, a push rod, a U-shaped rod, a bearing, a horizontal plate, an etching frame and a screw, the wafer is placed in the etching frame. The rotation and lifting of the horizontal plate not only speeds up the contact frequency between the wafer and the etching liquid, but also stirs the etching liquid, thereby improving the etching effect of the wafer.

[0005] In the technical solution of the above-mentioned patent, although the problem of poor chip etching uniformity is solved to a certain extent by horizontally rotating the chip, the etching liquid is disturbed too much when the chip is corroded. When etching chips of different specifications, the etching uniformity is difficult to control. Therefore, there are many difficulties in the preparation of ultra-high frequency chips at present. Summary of the invention

[0006] The purpose of the present invention is to provide a high-frequency wafer uniform etching device and method to solve the technical problem in the prior art that when etching wafers of different specifications, the etching uniformity is difficult to control, resulting in the wafer quality failing to meet the use requirements.

[0007] The purpose of the present invention can be achieved through the following technical solutions:

[0008] A high-frequency chip uniform etching device includes an etching outer tank and a chip body; it also includes an etching inner tank, the etching inner tank is located inside the etching outer tank, and the bottom of the etching inner tank is supported on the upper part of the etching outer tank by a support rod; a circulation pump is arranged at the bottom of the etching outer tank; the input end of the circulation pump is connected to a water pumping pipe, and the input end of the water pumping pipe is connected to the bottom of the etching outer tank; the output end of the circulation pump is connected to a water outlet pipe, and the end of the water outlet pipe is penetrated and arranged inside the etching inner tank; a circular frame is arranged inside the etching inner tank; a plurality of paddles in a circumferential array are fixedly connected to the outer side surface of the circular frame; the chip body is fixedly arranged inside the circular frame.

[0009] Preferably, a square frame A and a square frame B are arranged on the inner side of the circular frame; a first limit plate is arranged on the upper and lower sides of the square frame A and the square frame B, and a second limit plate is arranged on the left and right sides, and the chip body is fixed inside the circular frame through the cooperation of the first limit plate and the second limit plate; a connecting head is fixedly connected to the middle part of the outer surface of the first limit plate; symmetrically arranged springs are fixedly connected to the outer side of the second limit plate; symmetrically arranged guide rods are fixedly connected to the upper part of the first limit plate, and the guide rods pass through the frame structure formed by the square frame A and the square frame B.

[0010] Preferably, the square frame A and the square frame B are correspondingly provided with cavities, and the corners of the cavities are smooth curved surfaces; a symmetrically arranged fixing plate is fixedly connected to the upper inner side of the square frame A; a fixing rod is fixedly connected to the outer end of the fixing plate, and the cross-section of the fixing rod is a T-shaped structure; a guide wheel is rotatably connected to the fixing rod; through holes are provided at both ends of the first limit plate; a connecting rope is slidably arranged inside the cavity; one end of the connecting rope is connected to the middle part of the second limit plate, and the other end passes through the through hole and is wound around the guide wheel to be connected to the first limit plate.

[0011] Preferably, a protrusion is fixed between the upper and lower parts of the square frame A, the protrusion is a semicircular structure, and the protrusion fits with the square frame B; a screw rod is threadedly connected to the inside of the protrusion, and the lower end of the screw rod is a ring structure; the upper end of the screw rod is slidably connected to a laterally arranged lever.

[0012] Preferably, chamfers are provided at the four corners of the square frame A and the square frame B; semicircular blocks are fixedly connected to the positions of the square frame A and the square frame B corresponding to the chamfers; and a first threaded rod and a second threaded rod are fixedly connected to the two sides of the semicircular block corresponding to the square frame A respectively;

[0013] The first threaded rod is inserted into the semicircular block and the circular frame on the square frame B, and the outer end is fixedly connected with a butterfly nut; the second threaded rod is inserted into the end of the inclined rod, and the outer end is fixedly connected with a butterfly thread.

[0014] Preferably, symmetrically arranged cutouts are provided on the upper portion of the corrosion inner groove.

[0015] Preferably, a symmetrically arranged slide rail is fixed to the middle of the side wall of the corrosion inner groove, and the slide rail is an L-shaped structure; a slider is slidably arranged inside the slide rail, and the upper part of the slider is L-shaped and the lower part is a semicircular ring; external protrusions are fixed to both sides of the slider.

[0016] Preferably, a round rod is fixedly connected to the lower end of the sliding block; a fixing ring is arranged on the round rod; a bearing is arranged between the fixing ring and the round rod, and the outer ring of the bearing is connected to the fixing ring, and the inner ring is connected to the round rod.

[0017] Preferably, a circular array of oblique rods is fixedly connected to the fixing ring; and a circular frame is commonly connected to the outer ends of the oblique rods.

[0018] Preferably, a high frequency wafer uniform etching method comprises the following steps:

[0019] S1: Before etching the wafer body:

[0020] First, the wafer body is cleaned at 100°C for 2 minutes using an alkaline cleaning agent, and then cleaned at 60°C pure water using three different water tanks for 20 minutes each. After cleaning, the wafer body is dried to remove surface moisture and keep the wafer body dry. The frequency distribution of the entire wafer body is tested using a frequency testing device. Then, the wafer body is set inside the corrosion inner tank using the cooperation of the first limiting plate and the second limiting plate.

[0021] S2: When etching the wafer body:

[0022] In an environment of 39±1℃, the corrosive liquid added to the corrosion outer tank is pumped into the corrosion inner tank through a circulation pump, and the nozzle of the water outlet pipe is used to impact the pick, so that it drives the circular frame to rotate at a speed of 2±1rpm / min, thereby driving the wafer body to rotate, and the rotation state of the wafer body with the circular frame is observed in real time. If any abnormality is found, it needs to be adjusted in time to keep the speed in line with the set value;

[0023] S3: After etching the wafer body:

[0024] The chip body was placed in three different water tanks in turn and cleaned in 60°C pure water for 20 minutes each time. After cleaning, the chip body was dried to remove surface moisture and keep the chip body dry. The frequency distribution of the entire chip after corrosion was tested using frequency testing equipment.

[0025] Beneficial effects of the present invention:

[0026] 1) When the present invention performs etching processing on the chip body through a dynamic chip body etching method, the originally static chip body etching process is converted into a dynamic process, and the etching uniformity of the chip body is greatly improved. The surging force of the etching liquid by the water outlet pipe is used to realize that the circular frame drives the chip body to rotate at a speed of 2±1rpm / min, thereby improving the consistency of the etching frequency. Even if etching processing is performed on chips of different specifications, the corrosion uniformity is also very easy to control. Moreover, since when the chip body is fixed, only the first limit plate located at the top needs to be adjusted to synchronously adjust the second limit plates on the left and right sides, which is convenient and quick, and improves the yield.

[0027] 2) The present invention can make the most of the existing equipment structure and realize uniform etching of the frequency of the entire wafer at a relatively low cost, thereby achieving the goal of improving the yield and increasing the output of the chip body on a single wafer. Among them, the new ultra-high frequency chip body adopts a dynamic etching process to process the basic frequency, which can effectively avoid the problem of high surface roughness of traditional grinding sheets, reduce the starting impedance, and make the resistance of the product reach a lower state. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The present invention will be further described below in conjunction with the accompanying drawings.

[0029] Figure 1 It is a schematic diagram of the overall structure of the present invention;

[0030] Figure 2 is a cross-sectional view of the present invention;

[0031] Figure 3 is an exploded view of the fixing ring in the present invention;

[0032] Figure 4 It is a schematic diagram of the semicircular block structure in the present invention;

[0033] Figure 5 yes Figure 4 A partial enlarged view of the middle A;

[0034] Figure 6 It is an exploded view of the square frame A and the square frame B in the present invention;

[0035] Figure 7 It is a schematic diagram of the uniformity of the product etched by the dynamic wafer body etching method of the present invention;

[0036] Figure 8 This is a schematic diagram of the uniformity of the etching products of the traditional static wafer body etching method.

[0037] In the figure: 1, corrosion outer groove; 101, corrosion inner groove; 102, circulation pump; 103, water outlet pipe; 104, water pump; 105, cutout; 2, slide rail; 201, slider; 202, outer protrusion; 203, round rod; 204, bearing; 205, fixing ring; 206, oblique rod; 3, square frame A; 301, screw rod; 3011, protrusion; 3012, lever; 3013, connector; 3014, guide Rod; 302, first limit plate; 303, second limit plate; 3031, spring; 3032, cavity; 3033, connecting rope; 3034, fixing plate; 3035, fixing rod; 3036, guide wheel; 3037, perforation; 304, nut; 305, semicircular block; 306, first threaded rod; 307, second threaded rod; 4, square frame B; 5, circular frame; 501, paddle; 6, chip body. DETAILED DESCRIPTION

[0038] The following will be combined with the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0039] See also Figure 1-Figure 2 As shown, a high-frequency wafer uniform etching device includes an etching outer groove 1 and an etching inner groove 101. The etching inner groove 101 is located inside the etching outer groove 1 and is a rectangular structure with an upper opening. The bottom of the etching inner groove 101 is mounted on the upper part of the etching outer groove 1 through a support rod.

[0040] Please refer again Figure 2 As shown, a circulation pump 102 is arranged at the bottom of the corrosion outer tank 1; the input end of the circulation pump 102 is connected to a pumping pipe 104, and the input end of the pumping pipe 104 is connected to the bottom of the corrosion outer tank 1; the output end of the circulation pump 102 is connected to a water outlet pipe 103, and the end of the water outlet pipe 103 is arranged to penetrate the interior of the corrosion inner tank 101; the upper part of the corrosion inner tank 101 is provided with symmetrically arranged incisions 105, and the incision 105 is used to return the overflowed corrosion liquid to the interior of the corrosion outer tank 1.

[0041] Please refer again Figure 1 and Figure 3 As shown, a symmetrically arranged slide rail 2 is fixedly connected to the middle of the side wall of the corrosion inner groove 101, and the slide rail 2 is an L-shaped structure; a slider 201 is slidably arranged inside the slide rail 2, and the upper part of the slider 201 is L-shaped and the lower part is a semicircular ring; external protrusions 202 are fixedly connected to both sides of the slider 201, and the external protrusions 202 fit with the slide rail 2.

[0042] Please refer again Figure 3 As shown, a round rod 203 is fixedly connected to the lower end of the slider 201; a fixing ring 205 is arranged on the round rod 203; a bearing 204 is arranged between the fixing ring 205 and the round rod 203, the outer ring of the bearing 204 is connected to the fixing ring 205, and the inner ring is connected to the round rod 203, so as to reduce the friction between the fixing ring 205 and the round rod 203; a circular array of inclined rods 206 are fixedly connected to the fixing ring 205; a circular frame 5 is arranged on the outer ends of the inclined rods 206.

[0043] Please refer again Figure 4 As shown, a plurality of paddles 501 in a circumferential array are fixedly connected to the outer side surface of the circular frame 5 , and the paddles 501 are close to the end of the water outlet pipe 103 to drive the circular frame 5 to rotate.

[0044] Please refer again Figure 4 and Figure 5 As shown, a square frame A3 and a square frame B4 are arranged inside the circular frame 5; chamfers are arranged at the four corners of the square frame A3 and the square frame B4; semicircular blocks 305 are fixedly connected to the square frames A3 and B4 at positions corresponding to the chamfers; a first threaded rod 306 and a second threaded rod 307 are fixedly connected to both sides of the semicircular block 305 on the square frame A3; the first threaded rod 306 is inserted into the interior of the semicircular block 305 on the square frame B4 and the interior of the circular frame 5, and the outer end is fixedly connected with a butterfly nut 304; the second threaded rod 307 is inserted into the end of the inclined rod 206, and the outer end is fixedly connected with a butterfly thread.

[0045] Please refer again Figure 4 and Figure 6 As shown, a protrusion 3011 is fixedly connected between the upper and lower parts of the square frame A3. The protrusion 3011 is a semicircular structure and fits with the square frame B4. The internal thread of the protrusion 3011 is connected to a screw rod 301, and the lower end of the screw rod 301 is a ring structure. The upper end of the screw rod 301 is slidably connected to a laterally arranged lever 3012.

[0046] Please refer again Figure 6 As shown, first limit plates 302 are arranged on the upper and lower sides inside the square frame A3 and the square frame B4, and second limit plates 303 are arranged on the left and right sides; symmetrically arranged guide rods 3014 are fixedly connected to the upper part of the first limit plate 302, and the guide rods 3014 pass through the frame structure formed by the square frame A3 and the square frame B4; a connecting head 3013 is fixedly connected to the middle part of the outer surface of the first limit plate 302, and the connecting head 3013 is rotatably connected to the annular structure at the lower end of the screw rod 301; symmetrically arranged springs 3031 are fixedly connected to the outer side of the second limit plate 303, and the other end of the spring 3031 is fixedly connected to the square frame A3.

[0047] Please refer again Figure 6As shown, the square frame A3 and the square frame B4 are respectively provided with a cavity 3032, and the corners of the cavity 3032 are smooth curved surfaces; a symmetrically arranged fixing plate 3034 is fixedly connected to the upper inner side of the square frame A3; a fixing rod 3035 is fixedly connected to the outer end of the fixing plate 3034, and the cross section of the fixing rod 3035 is a T-shaped structure; a guide wheel 3036 is rotatably connected to the fixing rod 3035; through holes 3037 are provided at both ends of the first limiting plate 302; a connecting rope 3033 is slidably arranged inside the cavity 3032; one end of the connecting rope 3033 is connected to the middle part of the second limiting plate 303, and the other end passes through the through hole 3037 and is wound around the guide wheel 3036 to be connected to the first limiting plate 302.

[0048] Please refer again Figure 4 As shown, a wafer body 6 is disposed between the square frame A3 and the square frame B4, and the lower portion of the wafer body 6 is a flat structure, and the wafer body 6 is fixed with the cooperation of the first limiting plate 302 and the second limiting plate 303. The lower portion of the wafer body 6 is arranged as a flat structure to distinguish the upper and lower positions of the wafer body 6, and to facilitate the positioning of the wafer body 6.

[0049] In order to facilitate understanding of the above technical solution of the present invention, the working principle or operation mode of the present invention in the actual process is described in detail below:

[0050] Before etching the wafer body 6:

[0051] First, take out the L-shaped slider 201 from the inside of the slide rail 2, so that the oblique rod 206, square frame A3, square frame B4 and circular frame 5 can be taken out together, and then manually rotate the lever 3012, first make the screw rod 301 located at the bottom adjust the position of the first limit plate 302 located at the bottom, and then make the screw rod 301 located at the top adjust the position of the first limit plate 302 located at the bottom, wherein, when the upper limit plate moves upward, the second limit plates 303 located on the left and right sides can be synchronously driven to move through the action of the connecting rope 3033, so that the first limit plate 302 and the second limit plate 303 are in an expanded state, which is convenient for placing the chip body 6 on the first limit plate 302 located at the bottom, and then reversely rotate the screw rod 301 located at the top to make the upper limit plate move downward, at this time, the limit plates on the left and right sides are reset under the action of the spring 3031, and clamp the chip body 6.

[0052] Afterwards, the L-shaped slider 201 is placed inside the slide rail 2 again, so that the wafer body 6 is disposed inside the etching inner groove 101;

[0053] Finally, use an alkaline cleaning agent to clean the chip body 6 at 100°C for 2 minutes, and then use three different water tanks in turn to clean it at 60°C pure water for 20 minutes each. After cleaning, the chip body 6 is dried to remove surface moisture and keep the chip body 6 dry, and the frequency distribution of the entire chip body 6 is tested using frequency testing equipment.

[0054] When etching the wafer body 6:

[0055] Under the environment of 39±1℃, the corrosion liquid added to the corrosion outer tank 1 is pumped into the corrosion inner tank 101 through the circulation pump 102, and the nozzle of the water outlet pipe 103 is used to impact the paddle, so that it drives the circular frame 5 to rotate at a speed of 2±1rpm / min, and then drives the chip body 6 to rotate, and observes the state of the chip body 6 rotating with the circular frame 5 in real time. If any abnormality is found, it needs to be adjusted in time to keep the speed in line with the set value.

[0056] The ratio of the components of the etching solution is: 2L of dimethylformamide: 3L of pure water: 5L of hydrofluoric acid. Taking 10L of etching solution as the standard, it contains 2L of dimethylformamide, 3L of pure water, and 5L of hydrofluoric acid.

[0057] After etching the wafer body 6:

[0058] The chip body 6 is placed in three different water tanks in turn and cleaned for 20 minutes each under 60°C pure water conditions. After cleaning, the chip body 6 is dried to remove surface moisture and keep the chip body 6 dry. The frequency distribution of the entire chip after corrosion is tested using frequency testing equipment.

[0059] like Figure 7 and Figure 8 As shown, when the chip body 6 is etched by the above-mentioned chip body 6 etching method, the corrosion uniformity of the chip body 6 is greatly improved, and the originally static chip body 6 corrosion process is transformed into a dynamic process. The surging force of the etching liquid is exerted on the paddle 501 by the outlet pipe 103, so that the circular frame 5 drives the chip body 6 to rotate at a speed of 2±1rpm / min, thereby improving the consistency of the corrosion frequency and facilitating the control of the uniformity of corrosion of different chips; and because when the chip body 6 is fixed, only the first limit plate 302 located at the top needs to be adjusted to synchronously adjust the second limit plates 303 on the left and right sides, which is convenient and quick, and improves the yield.

[0060] In addition, the existing equipment structure can be utilized to the greatest extent, and the uniform corrosion of the frequency of the entire wafer can be achieved at a relatively low cost, thereby achieving the goal of improving the yield and increasing the output of the chip body 6 on a single wafer. Among them, the new ultra-high frequency chip body 6 of the present invention adopts a dynamic corrosion process to process the basic frequency, which can effectively avoid the problem of high surface roughness of traditional grinding sheets, reduce the starting impedance, and make the resistance of the product reach a lower state.

[0061] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0062] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A high-frequency wafer uniform etching device, comprising an etching outer groove (1) and a wafer body (6); characterized in that: It also includes an inner corrosion tank (101), which is located inside the outer corrosion tank (1), and the bottom of the inner corrosion tank (101) is mounted on the upper part of the outer corrosion tank (1) through a support rod; A circulation pump (102) is arranged at the bottom of the corrosion outer tank (1); the input end of the circulation pump (102) is connected to a water pumping pipe (104), and the input end of the water pumping pipe (104) is connected to the inside of the bottom of the corrosion outer tank (1); the output end of the circulation pump (102) is connected to a water outlet pipe (103), and the end of the water outlet pipe (103) is arranged to penetrate the inside of the corrosion inner tank (101); A circular frame (5) is arranged inside the corrosion inner groove (101); a plurality of paddles (501) in a circular array are fixedly connected to the outer side surface of the circular frame (5); and a wafer body (6) is fixedly arranged inside the circular frame (5).

2. A high frequency wafer uniform etching device according to claim 1, characterized in that: A square frame A (3) and a square frame B (4) are arranged inside the circular frame (5); first limiting plates (302) are arranged on the upper and lower sides of the square frame A (3) and the square frame B (4), and second limiting plates (303) are arranged on the left and right sides; the wafer body (6) is fixed inside the circular frame (5) through the cooperation of the first limiting plate (302) and the second limiting plate (303); A connector (3013) is fixedly connected to the middle of the outer surface of the first limiting plate (302); symmetrically arranged springs (3031) are fixedly connected to the outer side of the second limiting plate (303); A symmetrically arranged guide rod (3014) is fixedly connected to the upper portion of the first limiting plate (302), and the guide rod (3014) passes through the frame structure formed by the square frame A (3) and the square frame B (4).

3. A high frequency wafer uniform etching device according to claim 2, characterized in that: The square frame A (3) and the square frame B (4) are both provided with cavities (3032) correspondingly, and the corners of the cavities (3032) are smooth curved surfaces; A symmetrically arranged fixing plate (3034) is fixedly connected to the upper inner side of the square frame A (3); a fixing rod (3035) is fixedly connected to the outer end of the fixing plate (3034), and the cross section of the fixing rod (3035) presents a T-shaped structure; a guide wheel (3036) is rotatably connected to the fixing rod (3035); through holes (3037) are formed at both ends of the first limiting plate (302); A connecting rope (3033) is slidably arranged inside the cavity (3032); one end of the connecting rope (3033) is connected to the middle of the second limiting plate (303), and the other end passes through the through hole (3037) and is wound around the guide wheel (3036) to be connected to the first limiting plate (302).

4. A high frequency wafer uniform etching device according to claim 3, characterized in that: A convex block (3011) is fixedly connected between the upper and lower parts of the square frame A (3), and the convex block (3011) is in a semicircular structure. The convex block (3011) and the square frame B (4) fit each other. A screw rod (301) is threadedly connected inside the convex block (3011), and the lower end of the screw rod (301) is in a ring structure. The upper end of the screw rod (301) is slidably connected to a laterally arranged shifting rod (3012).

5. A high frequency wafer uniform etching device according to claim 2, characterized in that: Chamfers are arranged at the four corners of the square frame A (3) and the square frame B (4); semicircular blocks (305) are fixedly connected to the positions of the square frame A (3) and the square frame B (4) corresponding to the chamfers; and a first threaded rod (306) and a second threaded rod (307) are respectively fixedly connected to the two sides of the semicircular block (305) on the square frame A (3).

6. A high frequency wafer uniform etching device according to claim 1, characterized in that: The upper part of the corrosion inner groove (101) is provided with symmetrically arranged cutouts (105).

7. A high frequency wafer uniform etching device according to claim 1, characterized in that: A symmetrically arranged slide rail (2) is fixedly connected to the middle of the side wall of the corrosion inner groove (101), and the slide rail (2) is in an L-shaped structure; a slider (201) is slidably arranged inside the slide rail (2), and the upper part of the slider (201) is in an L-shape, and the lower part is in a semicircular ring shape; external protrusions (202) are fixedly connected to both sides of the slider (201).

8. A high frequency wafer uniform etching device according to claim 7, characterized in that: The lower end of the slider (201) is fixedly connected to a round rod (203); a fixing ring (205) is arranged on the round rod (203); a bearing (204) is arranged between the fixing ring (205) and the round rod (203); the outer ring of the bearing (204) is connected to the fixing ring (205), and the inner ring is connected to the round rod (203).

9. A high frequency wafer uniform etching device according to claim 8, characterized in that: The fixing ring (205) is fixedly connected with oblique rods (206) in a circumferential array; the outer ends of the oblique rods (206) are commonly connected with a circular frame (5).

10. A high-frequency wafer uniform etching method, applicable to the high-frequency wafer uniform etching device according to any one of claims 1 to 9, characterized in that: The following steps are involved: S1: Before etching the wafer body (6): First, the chip body (6) is cleaned at 100° C. for 2 minutes using an alkaline cleaning agent, and then cleaned at 60° C. pure water using three different water tanks for 20 minutes each. After cleaning, the chip body (6) is dried to remove surface moisture and keep the chip body (6) dry, and the frequency distribution of the entire chip body (6) is tested using a frequency testing device; then, the chip body (6) is set inside the corrosion inner groove (101) by using the cooperation of the first limiting plate (302) and the second limiting plate (303); S2: When etching the wafer body (6): In an environment of 39±1°C, the corrosive liquid added to the inner corrosion tank (1) is pumped into the inner corrosion tank (101) by a circulating pump (102), and the nozzle of the water outlet pipe (103) is used to impact the paddle, so that the circular frame (5) is driven to rotate at a speed of 2±1rpm / min, thereby driving the wafer body (6) to rotate, and the rotation state of the wafer body (6) following the circular frame (5) is observed in real time. If any abnormality is found, timely adjustment is required to keep the speed in accordance with the set value; S3: After etching the wafer body (6): The chip body (6) is placed in three different water tanks in turn and cleaned in 60°C pure water for 20 minutes each. After cleaning, the chip body (6) is dried to remove surface moisture and keep the chip body (6) dry. The frequency distribution of the entire chip after corrosion is tested using a frequency testing device.

Images