Method for representing diamond plane by using roughness Ra
By measuring and calculating the average value of roughness Ra on the diamond growth surface, the problem of subjective deviation and high cost in the judgment of diamond plane quality in the prior art is solved, and quantitative analysis and cost control of diamond plane quality are realized.
Patent Information
- Application Number
- CN202411901211.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-23
- Publication Date
- 2025-03-25
AI Technical Summary
The prior art has subjective deviations in judging the quality of diamond planes, and the commonly used large-scale instruments are not suitable for daily production and use, making it difficult to achieve quantitative analysis and cost control.
The plane mass of diamond seeds or blanks is quantitatively analyzed by taking more than two linear sampling paths on the diamond growth surface, measuring and calculating the average value of roughness Ra.
It realizes quantitative analysis of diamond plane quality, simple operation, low cost, suitable for daily production and use, and can effectively evaluate the plane quality of diamond seeds or blanks.
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Figure CN119687858A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the field of diamond measurement, and particularly relates to a method for characterizing a diamond plane by using roughness Ra. Background Art
[0002] The plane quality of diamond seeds and blanks is related to the quality of subsequent growth of CVD-grown diamonds. The existing method is to use optical microscopes, scanning electron microscopes, and confocal microscopes to judge the plane quality of diamonds.
[0003] The existing commonly used optical microscope is used to judge the surface quality of diamond. The specific operation is: using an optical microscope to directly observe the surface of the diamond, and judging whether the surface quality meets the growth of the seed or blank by naked eye during observation, which has a certain subjective deviation and cannot be quantitatively analyzed. Scanning electron microscopes and confocal microscopes are large instruments, which are not convenient to carry and use, and are expensive and have high operating thresholds, and are not suitable for daily production use. Summary of the invention
[0004] In order to solve the above problems, the purpose of the present invention is to provide a method for characterizing the diamond plane using roughness Ra, which can be used to quantitatively analyze the quality of diamond seeds and blank planes; and the operation is simple, the cost is low, and it is more suitable for daily production use.
[0005] In order to achieve the above object, the technical solution of the present invention is as follows.
[0006] A method for characterizing a diamond surface using roughness Ra, comprising:
[0007] Step 1: Take two or more linear sampling paths on the diamond growth surface, and the two or more linear sampling paths intersect at the same coordinate origin;
[0008] Step 2: Take at least one sampling section on the linear sampling path, the distance of the sampling section is L, and measure the roughness of the diamond growth surface at the sampling section;
[0009] Step 3: Calculate the average roughness of the sampling segments on the linear sampling path to obtain the roughness value of the linear sampling path, and record it as Ra;
[0010] Step 4: Calculate the average value of the roughness Ra of more than two linear sampling paths to obtain the roughness Ra that characterizes the surface quality of the diamond seed and blank. 平均 .
[0011] In this method, the roughness value Ra of two or more linear sampling paths of the diamond growth surface is calculated to obtain the roughness value Ra that can be used to characterize the surface quality of the diamond seed and blank. 平均 , in order to achieve the Ra平均 To quantitatively analyze the surface quality of diamond seeds and blanks; this method is simple to operate, low-cost, and more suitable for daily production use.
[0012] Furthermore, at least one sampling segment of the same linear sampling path is symmetrically distributed about the coordinate origin.
[0013] Furthermore, the diamond growth surface is a rectangle, and the intersection point of its two diagonals is the coordinate origin.
[0014] Furthermore, the distance L of the sampling section is 0.25 mm or 0.8 mm or 2.5 mm.
[0015] Furthermore, the number of the linear sampling paths is two, four or six.
[0016] Furthermore, the number of sampling segments on the same linear sampling path is one segment, two segments, three segments, four segments, or five segments.
[0017] Furthermore, the angles of the multiple angles formed by the intersection of more than two linear sampling paths are all the same.
[0018] Furthermore, the angle is 30°, 45° or 90°.
[0019] Furthermore, there are four linear sampling paths, and each linear sampling path includes five continuous sampling segments, and the distance L between the sampling segments is 0.8 mm; more than four linear sampling paths intersect at the same coordinate origin, and form eight 45° angles.
[0020] Furthermore, through the roughness value Ra 平均 The surface quality of diamond seeds and roughcasts is divided into three levels: excellent, medium and poor:
[0021] Excellent: Ra 平均 ≤0.200, the crystal surface is smooth and will not have adverse effects on growth;
[0022] Chinese: Ra 平均 ∈(0.200-0.600), cutting lines or shallow pits can be seen on the crystal surface when magnified, which will not have a negative impact on the growth of 3mm thick crystals;
[0023] Poor: Ra 平均 ≥0.600, there are obvious cutting marks or large grooves on the crystal surface, which affect the subsequent crystal growth and form defects.
[0024] The beneficial effect of the present invention is that, in this method, by calculating the average value of the roughness value Ra of more than two linear sampling paths of the diamond growth surface, the roughness value Ra that can be used to characterize the plane quality of the diamond seed and blank is obtained. 平均, in order to achieve the Ra 平均 To quantitatively analyze the surface quality of diamond seeds and blanks; this method is simple to operate, low-cost, and more suitable for daily production use. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] Figure 1 Table 1 is a table recording the test results of diamond measurement using this method.
[0026] Figure 2 Table 2 is a table recording the test results of diamond measurement using this method.
[0027] Figure 3 It is a test schematic diagram of the diamond growth surface.
[0028] Figure 4 This is a schematic diagram of using a roughness tester to test diamond. DETAILED DESCRIPTION
[0029] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.
[0030] Cutting and cleaning the diamond growth surface is one way to process the growth surface, but the evaluation of the diamond growth surface was previously a sensory evaluation, such as whether it is smooth, whether there are grooves, impurity residues, etc., without data support. Therefore, a method for quantitatively analyzing the surface quality of diamond seeds and blanks is proposed in this application.
[0031] A method for characterizing a diamond surface using roughness Ra, comprising:
[0032] Step 1: Take two or more linear sampling paths on the diamond growth surface, and the two or more linear sampling paths intersect at the same coordinate origin;
[0033] Step 2: Take at least one sampling section on the linear sampling path, the distance of the sampling section is L, and use a roughness meter to measure the roughness of the diamond growth surface at the sampling section; wherein the roughness meter is a prior art, and other roughness testing devices can also be used.
[0034] Step 3: Calculate the average roughness of the sampling segments on the linear sampling path to obtain the roughness value of the linear sampling path, and record it as Ra;
[0035] Step 4: Calculate the average value of the roughness Ra of more than two linear sampling paths to obtain the roughness Ra that characterizes the surface quality of the diamond seed and blank. 平均 .
[0036] In this embodiment, at least one sampling segment of the same linear sampling path is symmetrically distributed about the coordinate origin.
[0037] In this embodiment, the diamond growth surface is a rectangle, and the intersection point of its two diagonals is the coordinate origin.
[0038] In this embodiment, the distance L of the sampling section is 0.25 mm, 0.8 mm or 2.5 mm.
[0039] In this embodiment, the number of the linear sampling paths is two, four or six.
[0040] In this embodiment, the number of sampling segments on the same linear sampling path is one segment, two segments, three segments, four segments, or five segments.
[0041] In this embodiment, the angles of the multiple angles formed by the intersection of more than two linear sampling paths are all the same.
[0042] In this embodiment, the angle is 30°, 45° or 90°.
[0043] In this embodiment, there are four linear sampling paths, and each linear sampling path includes five continuous sampling segments, and the distance L between the sampling segments is 0.8 mm; more than four linear sampling paths intersect at the same coordinate origin and form eight 45° angles.
[0044] For more information, see Figure 3 It can be seen that Ra1-Ra4 in the figure is a schematic diagram of the positions of the four linear sampling paths distributed on the diamond growth surface; see Figure 1-2 It can be seen that these are multiple experimental data of testing the diamond growth surface using this method.
[0045] In this embodiment, the roughness value Ra 平均 The surface quality of diamond seeds and roughcasts is divided into three levels: excellent, medium and poor:
[0046] Excellent: Ra 平均 ≤0.200, the crystal surface is smooth and will not have adverse effects on growth;
[0047] Chinese: Ra 平均 ∈(0.200-0.600), cutting lines or shallow pits can be seen on the crystal surface when magnified, which will not have a negative impact on the growth of 3mm thick crystals;
[0048] Poor: Ra 平均 ≥0.600, there are obvious cutting marks or large grooves on the crystal surface, which affect the subsequent crystal growth and form defects.
[0049] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.
Claims
1. A method for characterizing a diamond surface using roughness Ra, characterized in that: include: Step 1: Take two or more linear sampling paths on the diamond growth surface, and the two or more linear sampling paths intersect at the same coordinate origin; Step 2: Take at least one sampling section on the linear sampling path, the distance of the sampling section is L, and measure the roughness of the diamond growth surface at the sampling section; Step 3: Calculate the average roughness of the sampling segments on the linear sampling path to obtain the roughness value of the linear sampling path, and record it as Ra; Step 4: Calculate the average value of the roughness Ra of more than two linear sampling paths to obtain the roughness Ra that characterizes the surface quality of the diamond seed and blank. 平均 .
2. A method for characterizing a diamond surface by roughness Ra according to claim 1, characterized in that: At least one sampling segment of the same linear sampling path is symmetrically distributed about the coordinate origin.
3. A method for characterizing a diamond surface by roughness Ra according to claim 1, characterized in that: The diamond growth surface is rectangular, and the intersection point of its two diagonals is the coordinate origin.
4. The method for characterizing a diamond surface by roughness Ra according to claim 1, characterized in that: The distance L of the sampling section is 0.25 mm, 0.8 mm or 2.5 mm.
5. The method of characterizing a diamond surface by roughness Ra according to claim 1, characterized in that: The number of the linear sampling paths is two, four or six.
6. A method for characterizing a diamond surface by roughness Ra according to claim 1, characterized in that: The number of sampling sections on the same linear sampling path is one section, two sections, three sections, four sections or five sections.
7. A method for characterizing a diamond surface by roughness Ra according to claim 1, characterized in that: The angles of the multiple angles formed by the intersection of more than two linear sampling paths are all the same.
8. A method for characterizing a diamond surface by roughness Ra according to claim 7, characterized in that: The angle is 30°, 45° or 90°.
9. The method of characterizing a diamond surface by roughness Ra according to claim 1, characterized in that: There are four linear sampling paths, and each linear sampling path includes five continuous sampling segments, and the distance L between the sampling segments is 0.8 mm; more than four linear sampling paths intersect at the same coordinate origin, and form eight 45° angles.
10. A method for characterizing a diamond surface by roughness Ra according to any one of claims 1 to 9, characterized in that: By roughness value Ra 平均 The surface quality of diamond seeds and roughcasts is divided into three levels: excellent, medium and poor: Excellent: Ra 平均 ≤0.200, the crystal surface is smooth and will not have adverse effects on growth; Chinese: Ra 平均 ∈(0.200-0.600), cutting lines or shallow pits can be seen on the crystal surface when magnified, which will not have a negative impact on the growth of 3mm thick crystals; Poor: Ra 平均 ≥0.600, there are obvious cutting marks or large grooves on the crystal surface, which affect the subsequent crystal growth and form defects.