Wafer surface temperature measurement method and device

Abstract

The invention provides a wafer surface temperature measurement method and device, and belongs to the technical field of semiconductor manufacturing, and the method comprises the steps: roasting a fluorescent indicator at different preset temperatures, and calibrating the temperature of the fluorescent indicator after roasting for different time periods at the same temperature; heating the wafer provided with the fluorescent indicators, wherein the fluorescent indicators are distributed at preset positions of the wafer at intervals; acquiring the temperature of the fluorescent indicator on the wafer; according to the roasting temperature of the fluorescent indicator, the temperature of the fluorescent indicator after roasting for different time periods and the temperature of the fluorescent indicator on the wafer, the heating temperature and the heating time of the fluorescent indicator are obtained, and therefore the heating temperature and the heating time of the corresponding position of the surface of the wafer are obtained. According to the wafer surface temperature measurement method, the temperature of the wafer surface and the heating time of the wafer can be obtained at the same time, and real heat work absorbed by the wafer surface can be obtained.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor manufacturing technology, and more specifically, relates to a wafer surface temperature measurement method and device. Background Art

[0002] In the semiconductor manufacturing process, wafer temperature is a critical parameter that directly impacts the quality and stability of various on-wafer processing techniques. Proper wafer temperature control can improve the performance and reliability of semiconductor devices, reducing product failure rates and costs. For example, uneven wafer temperature distribution can lead to excessive temperature gradients during the manufacturing process, which in turn affects the quality and performance of devices on the wafer. Therefore, in actual semiconductor processing, wafer surface temperature measurement is required. Then, through rational process design and optimized equipment parameters, wafer temperature uniformity is controlled to ensure consistent device performance across the entire wafer.

[0003] Existing wafer temperature measurement methods generally employ wired thermocouple wafers (TC wafers) and wireless temperature measurement wafers. Wired TC wafers use thermocouples (TC) as temperature sensors, connected via wires to a temperature collector or host computer. They can measure temperatures within a range of nearly 1000 degrees Celsius. Thermocouples offer a simple structure, convenient operation, and easy installation. However, because thermocouple measurements require external wires extending outside the wafer processing chamber, a vacuum feedthrough is required. Furthermore, thermocouples can only measure a single point in space and time. For a wafer, they can only measure the temperature parameters of the wafer surface at a specific moment and cannot reveal the actual thermal work absorbed by the wafer surface (thermal work is the combined effect of time and temperature). Wireless temperature measurement wafers integrate an electronic temperature measurement chip and a wireless module on the wafer. They can transmit temperature signals to a temperature collector or host computer via wireless communication, but cannot measure high temperatures and have a significantly lower service life than wired products. Summary of the Invention

[0004] The object of the present invention is to provide a wafer surface temperature measurement method and device, which can obtain the heating temperature and heating time at a preset position on the wafer surface.

[0005] To achieve the above-mentioned purpose, the technical solution adopted by the present invention is as follows: In a first aspect, the present invention provides a method for measuring the temperature of a wafer surface, comprising: calcining the fluorescent indicator at different preset temperatures, and calibrating the temperature of the fluorescent indicator after calcination at the same temperature for different time periods; heating a wafer provided with the fluorescent indicator, wherein the fluorescent indicator is distributed at intervals at predetermined positions on the wafer; obtaining the temperature of the fluorescent indicator on the wafer; The heating temperature and heating time of the fluorescent indicator are obtained according to the baking temperature of the fluorescent indicator, the temperature of the fluorescent indicator after baking in different time periods, and the temperature of the fluorescent indicator on the wafer, thereby obtaining the heating temperature and heating time of the corresponding position on the wafer surface.

[0006] In one embodiment, in the step of baking the indicator at different preset temperatures and obtaining the temperature of the indicator after baking at the same temperature for different time periods, the different preset temperatures increase at preset temperature intervals, and the different time periods increase at preset time intervals.

[0007] In one embodiment, the wafer provided with the indicator is heated, wherein the indicator is distributed at intervals on preset positions of the wafer, and the preset positions are a plurality of cavities opened on the surface of the wafer at intervals.

[0008] In one embodiment, in heating the wafer provided with the indicator, the wafer is heated by a temperature homogenizing plate, a heating plate or a constant temperature bath.

[0009] In one embodiment, the indicator is a fluorescent material.

[0010] A second aspect of the present invention provides a wafer surface temperature measuring device, comprising a wafer, an indicator, a heating structure, and a temperature measuring structure; A plurality of cavities are provided on the surface of the wafer, and the cavities are arranged at intervals. The cavities are used to accommodate the fluorescent indicator. The temperature measuring structure is used to obtain the temperature of the fluorescent indicator after the wafer is heated, so as to obtain the heating temperature and heating time of the fluorescent indicator based on the baking time of the fluorescent indicator calibrated in the wafer surface temperature measurement method as described above, the temperature of the fluorescent indicator after baking for different time periods, and the temperature of the fluorescent indicator on the wafer, thereby obtaining the heating temperature and heating time of the corresponding position on the wafer surface.

[0011] In one embodiment, the cavities are blind holes opened on the same surface of the wafer, and the blind holes are evenly spaced.

[0012] In one embodiment, the cavities are distributed in an array on the surface of the wafer; or the cavities are evenly distributed along the center circumference of the wafer.

[0013] In one embodiment, the fluorescent indicator is KLa(MoO4) 2+ 、Eu 3+ :La2O2S、Cr:YAG、Nd:Glass、Cr 3 + :LiSrAlF6, Cr:Al2O3, Nd:YAG, Cr:BeAl2O3; or the fluorescent indicator is doped with Nd 3+Fluorescent materials, doped with Tm 3+ Fluorescent materials, doped Er 3+ fluorescent materials, or doped with Cr 3+ fluorescent materials.

[0014] In one embodiment, a window is provided on the cavity, and the window is used to observe changes in the fluorescent indicator.

[0015] In one embodiment, the window is a quartz window, a sapphire window, a magnesium aluminum spinel window, or an aluminum oxynitride window; and the window is bonded to the surface of the wafer.

[0016] In one embodiment, the viewing window is parallel to the surface of the wafer, the viewing window is higher than the surface of the wafer, or the viewing window is flush with the surface of the wafer.

[0017] In one embodiment, the outer contour of the cavity opening is circular, and the diameter of the circle is 1-10 mm; Alternatively, the outer contour of the cavity opening is a rectangle, and the length or width of the rectangle is 1-10 mm; The filling thickness of the fluorescent indicator inside the cavity is 0.1-0.5 mm.

[0018] In one embodiment, the temperature measurement structure is a fluorescent fiber temperature measurement structure, which includes a fiber optic probe and a temperature measurement and display platform. One end of the fiber optic probe is connected to the temperature measurement and display platform, and the other end of the fiber optic probe is used to obtain the light signal of the fluorescent indicator.

[0019] The wafer surface temperature measurement method provided by the present invention includes baking a fluorescent indicator at different preset temperatures, calibrating the temperature of the fluorescent indicator after baking at the same temperature for different time periods; heating a wafer provided with the fluorescent indicator, wherein the fluorescent indicator is spaced apart at preset positions on the wafer; obtaining the temperature of the fluorescent indicator on the wafer; and obtaining the heating temperature and heating time of the fluorescent indicator based on the baking temperature of the fluorescent indicator, the temperature of the fluorescent indicator after baking at different time periods, and the temperature of the fluorescent indicator on the wafer, thereby obtaining the heating temperature and heating time of the corresponding position on the wafer surface. This wafer surface temperature measurement method can simultaneously obtain the temperature of the wafer surface and the time the wafer is heated, and can obtain the actual heat work absorbed by the wafer surface.

[0020] The wafer surface temperature measuring device provided by the present invention includes a wafer, a fluorescent indicator and a temperature measuring structure. A plurality of cavities are opened on the wafer surface, which are arranged at intervals. The cavities are used to accommodate the fluorescent indicators. The temperature measuring structure is used to measure the temperature of the fluorescent indicator after the wafer is heated, so as to obtain the heating temperature and heating time of the fluorescent indicator according to the baking time of the fluorescent indicator calibrated in the wafer surface temperature measurement method, the temperature of the fluorescent indicator after baking in different time periods, and the temperature of the fluorescent indicator on the wafer, thereby obtaining the heating temperature and heating time of the corresponding position on the wafer surface. The wafer surface temperature measuring device can simultaneously obtain the temperature of the wafer surface and the time when the wafer is heated, thereby obtaining the real thermal work absorbed by the wafer surface, and does not require the use of an electronic temperature measuring chip and a wireless module, thereby improving the service life. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0022] Figure 1 A flow chart of a wafer surface temperature measurement method provided by an embodiment of the present invention; Figure 2 A schematic structural diagram of a wafer surface temperature measuring device provided by an embodiment of the present invention; Figure 3 A top view of a wafer and a cavity opened on the wafer of the wafer surface temperature measuring device provided by an embodiment of the present invention; Figure 4 A schematic structural diagram of a cavity and a window provided on a wafer of a wafer surface temperature measuring device provided by an embodiment of the present invention; Figure 5 A top view of a wafer and a cavity opened on the wafer of a wafer surface temperature measuring device provided in an embodiment of the present invention.

[0023] Among them, the reference numerals in the figures are: 1-wafer; 2-fluorescent indicator; 3-temperature measurement structure; 11-cavity; 12-window; 31-fiber optic probe; 32-temperature measurement and display platform. DETAILED DESCRIPTION

[0024] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0025] In the description of the present invention, it should be understood that the terms "including" and "having" and any variations thereof used herein are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus that includes a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to these processes, methods, products or apparatuses.

[0026] It should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention.

[0027] In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. It should be understood that the term "and / or" used in this article is merely a way to describe the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0028] Existing wafer temperature measurement methods generally use wired thermocouple wafers (TC wafers) and wireless temperature measurement wafers. The advantage of wireless temperature measurement wafers over wired TC wafers is that they can measure temperature wirelessly, eliminating the need to shut down the semiconductor process chamber and open it. Instead, wafers can be directly transferred online by a robotic arm to the location where temperature measurement is required, such as the chuck or furnace tube, reducing maintenance time and improving efficiency. However, their disadvantage is that they cannot measure high temperatures, especially above 500°C, as no electronic chips currently operate normally. Furthermore, their service life and product lifespan are significantly shorter than those of wired products.

[0029] Currently, the main high-temperature wireless measurement technologies include infrared pyrometers, cones, blocks, and molten metal indicator temperature measurement. Infrared pyrometers measure surface temperature using the blackbody radiation method. However, they require a designated mounting location and observation window within the chamber. Due to the varying infrared emissivity of different materials, calibration is required. Cones or blocks can be used to monitor the temperature and duration of heating in a furnace. Heating materials are affected not only by temperature but also by the duration of exposure to that temperature. The blocks or cones can measure the amount of energy transferred during the heating process, often referred to as heat work (heat work is the combined effect of time and temperature). During testing, the contraction of the block or the bending position of the cone can be measured during heating, and the heating time and temperature parameters can be inferred from a lookup table. Cones and blocks require different composition ratios to measure temperatures across different temperature ranges. Specific temperature parameters can then be inferred based on changes in the block size or the cone bending angle. Molten metal indicator temperature measurement can indicate the temperature parameters of the wafer surface. However, the change in the melting point of the metal indicator is controlled by adjusting the indicator's composition. Therefore, this testing method requires the pre-adjustment and calibration of the metal indicator composition in each chamber, which occupies a large volume and the metal indicator is heavy. This application addresses these issues and provides a method and device for measuring wafer surface temperature.

[0030] The wafer surface temperature measurement method and device provided by the present invention are described in detail below with reference to specific embodiments.

[0031] Figure 1 For a flow chart of the wafer surface temperature measurement method provided by an embodiment of the present invention, please refer to Figure 1 As shown, a first aspect of this embodiment provides a wafer surface temperature measurement method, comprising: S101, calcining the fluorescent indicator at different preset temperatures, and calibrating the temperature of the fluorescent indicator after calcination at the same temperature for different time periods; Specifically, in this embodiment, the fluorescent indicator is baked at different preset temperatures, that is, the fluorescent indicator is baked at different temperature gradients, and the temperature value of the fluorescent indicator at a specific temperature is recorded when the baking time is different at the same temperature value. Table 1 shows the temperature of the fluorescent indicator corresponding to different temperatures and baking times. For example, after the fluorescent indicator is baked at a temperature of 1000°C for 30min, 60min, 90min, 120min, 150min, 160min, and 180min, the temperature of the fluorescent indicator at room temperature is a1, a2, a3, a4, and a5. The fluorescent indicator is then baked at temperatures of 1100°C, 1150°C, 1200°C, and 1250°C for 30min, 60min, 90min, 120min, 150min, 160min, and 180min, respectively, and the temperature of the fluorescent indicator at room temperature is measured and recorded. The temperature of the fluorescent indicator at room temperature is measured by a fiber optic probe.

[0032]

[0033] Table 1 In this embodiment, to improve the accuracy of fluorescent indicator calibration, temperatures a1, a2, a3, a4, and a5 are, for example, average values ​​obtained by performing multiple repeatable tests on the fluorescent indicator after calcining the fluorescent indicator at 1000°C for 30 minutes, 60 minutes, 90 minutes, 120 minutes, 150 minutes, and 180 minutes, respectively. For example, a1 is the average value obtained after calcining multiple groups of fluorescent indicators at 1000°C for 30 minutes.

[0034] Temperatures b1, b2, b3, b4, and b5 are average values ​​obtained by performing multiple repeatability tests on the fluorescent indicator calcined at 1100° C. for 30 min, 60 min, 90 min, 120 min, 150 min, and 180 min, respectively.

[0035] Temperatures c1, c2, c3, c4, and c5 are average values ​​obtained by performing multiple repeatability tests on the fluorescent indicator calcined at 1150°C for 30 min, 60 min, 90 min, 120 min, 150 min, and 180 min, respectively.

[0036] Temperatures d1, d2, d3, d4, and d5 are average values ​​obtained by performing multiple repeatability tests on the fluorescent indicator calcined at 1200°C for 30 min, 60 min, 90 min, 120 min, 150 min, and 180 min, respectively.

[0037] Temperatures e1, e2, e3, e4, and e5 are average values ​​obtained by performing multiple repeatability tests on the fluorescent indicator calcined at 1250° C. for 30 min, 60 min, 90 min, 120 min, 150 min, and 180 min, respectively.

[0038] S102, heating the wafer provided with the fluorescent indicator, wherein the fluorescent indicator is distributed at intervals at preset positions on the wafer; Specifically, the fluorescent indicators of this embodiment are distributed at intervals on the preset positions of the wafer, for example, the fluorescent indicators are distributed in an array on the surface of the wafer; or the fluorescent indicators are evenly distributed along the central circumference of the wafer. This embodiment distributes the fluorescent indicators at intervals on the preset positions of the wafer, and obtains the heating temperature and heating time at the preset position of the wafer through the temperature of the indicator at each preset position, thereby obtaining the temperature distribution of the entire wafer surface, helping the operator to fully understand the temperature condition of the wafer. In this embodiment, a temperature equalizing plate, a heating plate or a constant temperature bath can be used to heat the wafer. For example, a cavity is opened at a preset position on the surface of the wafer of this embodiment, wherein the fluorescent indicator is located in the cavity.

[0039] In this embodiment, the fluorescent indicator in the “fluorescent indicator interval distribution” is the same as the fluorescent indicator being calibrated, but the fluorescent indicator in the “fluorescent indicator interval distribution” cannot be the fluorescent indicator used in the calibration process.

[0040] S103, obtaining the temperature of the fluorescent indicator on the wafer; Specifically, after heating the wafer for a certain period of time, the temperature of the fluorescent indicator on the wafer is measured. In this embodiment, the temperature of the fluorescent indicator on the wafer is measured by an optical fiber probe at room temperature.

[0041] S104 , obtaining a heating temperature and a heating time of the fluorescent indicator according to the calibrated baking time of the fluorescent indicator, the temperature of the corresponding fluorescent indicator, and the temperature of the fluorescent indicator on the wafer, thereby obtaining a heating temperature and a heating time of a corresponding position on the wafer surface.

[0042] Specifically, according to temperature conversion table 1, the heating time and heating temperature of the fluorescent indicator in each wafer cavity can be deduced from the temperature of the fluorescent indicator in the cavity opened on the wafer surface, and the heating temperature and heating time corresponding to the preset position on the wafer surface can be obtained.

[0043] Table 1 in the above embodiment shows the temperature of the fluorescent indicator obtained after the fluorescent indicator is calcined at 1000°C, 1100°C, 1150°C, 1200°C, and 1250°C for 30 min, 60 min, 90 min, 120 min, 150 min, 160 min, and 180 min, respectively. Of course, the temperature gradient and heating time interval can be further adjusted in other calibration processes. For example, the starting temperature is 800°C, and the temperature is heated to different preset temperatures for calcination, and then the different preset temperatures are increased at intervals of 25 degrees Celsius. For the same preset temperature, the calcination temperature can be increased at intervals of 30 minutes.

[0044] This embodiment can obtain more calibration values ​​by shortening the preset temperature interval and the preset time interval. In this embodiment, if the temperature values ​​calibrated in Table 1 are the same when calcined at different temperatures during the calibration process, the calibration can be repeated by replacing a different type of fluorescent indicator.

[0045] In the CVD process, temperature uniformity and accuracy have a significant impact on the quality and yield of thin film coatings. Therefore, it's necessary to measure the temperature within the CVD tool chamber during CVD installation, calibration testing, or abnormality analysis. Existing CVD chamber temperature monitoring typically uses a TC wafer temperature measurement system. This system utilizes a specialized process to embed high-temperature-resistant thermocouples at specific locations on the wafer surface. This system measures the actual temperature at that specific location and the overall temperature distribution across the wafer. However, this system requires external wiring to the outside of the CVD chamber, requires the design of a vacuum feedthrough, and requires the chamber to be shut down and opened. Furthermore, the thermocouple can only measure a single point in space and time. For a wafer, this temperature parameter can only be measured at a specific moment in time, and cannot reveal the actual thermal energy absorbed by the wafer surface. The wafer surface temperature measurement method of this embodiment can determine the indicator's heating temperature and heating time based on the indicator's calibrated firing time, the corresponding indicator temperature, and the indicator's temperature on the wafer, thereby determining the heating temperature and heating time at the corresponding location on the wafer. That is, the wafer surface temperature measurement method of this embodiment can simultaneously indicate the temperature of the wafer surface and the time when the wafer is heated, and can obtain the actual thermal work absorbed by the wafer surface, helping operators to fully understand the temperature conditions of the wafer surface.

[0046] The wafer surface temperature measurement method provided in this embodiment includes baking a fluorescent indicator at different preset temperatures, calibrating the temperature of the fluorescent indicator after baking at the same temperature for different time periods; heating a wafer provided with the fluorescent indicator, wherein the fluorescent indicator is spaced apart at preset positions on the wafer; obtaining the temperature of the fluorescent indicator on the wafer; and obtaining the heating temperature and heating time of the fluorescent indicator based on the baking temperature of the fluorescent indicator, the temperature of the fluorescent indicator after baking at different time periods, and the temperature of the fluorescent indicator on the wafer, thereby obtaining the heating temperature and heating time of the corresponding position on the wafer surface. This wafer surface temperature measurement method can simultaneously obtain the temperature of the wafer surface and the time the wafer is heated, and can obtain the actual heat work absorbed by the wafer surface.

[0047] Figure 2 A schematic diagram of the structure of a wafer surface temperature measuring device provided by an embodiment of the present invention. Figure 3 For a top view of a wafer and a cavity provided on a wafer of a wafer surface temperature measuring device provided by an embodiment of the present invention, please refer to Figure 2 and Figure 3 As shown, a second aspect of this embodiment provides a wafer surface temperature measuring device, including a wafer 1, a fluorescent indicator 2 and a temperature measuring structure 3.

[0048] A plurality of cavities 11 are provided on the surface of the wafer 1, and the cavities 11 are arranged at intervals. The cavities 11 are used to accommodate the fluorescent indicator 2. The temperature measuring structure 3 is used to obtain the temperature of the fluorescent indicator 2 after the wafer 1 is heated, so as to obtain the heating temperature and heating time of the fluorescent indicator 2 according to the calcination time of the fluorescent indicator calibrated in the wafer surface temperature measurement method described in the above embodiment, the temperature of the fluorescent indicator after calcination for different time periods, and the temperature of the fluorescent indicator 2 on the wafer 1, thereby obtaining the heating temperature and heating time of the corresponding position on the surface of the wafer 1.

[0049] The wafer surface temperature measuring device of this embodiment can be applied to the temperature detection of the reaction chamber of the CVD equipment. The wafer surface temperature measuring device obtains the heating temperature and heating time of the fluorescent indicator 2 according to the baking time of the fluorescent indicator calibrated in the wafer surface temperature measurement method as described in the above embodiment, the temperature of the corresponding fluorescent indicator and the temperature of the fluorescent indicator 2 on the wafer 1, thereby obtaining the heating temperature and heating time of the corresponding position of the wafer 1. After obtaining the heating temperature and heating time of a specific position of the wafer 1 and the temperature distribution of the entire wafer 1. These temperature data can help engineers evaluate the stability of the CVD process, track temperature changes, and adjust process parameters, thereby ensuring the quality and performance of CVD process products.

[0050] This embodiment does not impose any particular restrictions on the size of the wafer 1. The size of the wafer 1 can be preset in advance based on the size of the wafer 1 to be processed by the CVD equipment. The surface of the wafer 1 is provided with a plurality of cavities 11, which are spaced apart. The cavities 11 are used to accommodate the fluorescent indicator 2. In this embodiment, the cavities 11 provided on the surface of the wafer 1 are used to load the fluorescent indicator 2. This embodiment does not impose any particular restrictions on the outer contour shape of the cavities 11. In this embodiment, the temperature of the surface of the wafer 1 is obtained by obtaining the temperature of the fluorescent indicator 2 through the plurality of cavities 11 provided at different positions on the surface of the wafer 1 for accommodating the fluorescent indicator 2.

[0051] This embodiment does not impose any particular restrictions on the specific material of the fluorescent indicator 2. For example, the fluorescent indicator 2 may be KLa(MoO4) 2+ 、Eu 3+ :La2O2S、Cr:YAG、Nd:Glass、Cr 3+ :LiSrAlF6, Cr:Al2O3, Nd:YAG, Cr:BeAl2O3; or the fluorescent indicator is doped with Nd 3+ Fluorescent materials, doped with Tm 3+ Fluorescent materials, doped Er 3+ fluorescent materials, or doped with Cr 3+ fluorescent materials.

[0052] The temperature measurement structure 3 of this embodiment is used to measure the temperature of the fluorescent indicator 2 after the wafer 1 is heated. The specific structure of the temperature measurement structure 3 is not particularly limited in this embodiment, as long as it can measure the temperature of the fluorescent indicator 2 at a corresponding position after the wafer 1 is heated. Exemplarily, the temperature measurement structure 3 includes a fiber optic probe 31 and a temperature measurement and display platform 32. One end of the fiber optic probe 31 of this embodiment is connected to the temperature measurement and display platform 32, and the other end is used to obtain the optical signal of the fluorescent indicator 2.

[0053] The wafer surface temperature measuring device provided in this embodiment includes a wafer, a fluorescent indicator and a temperature measuring structure. A plurality of cavities are opened on the wafer surface, and the cavities are arranged at intervals. The cavities are used to accommodate the fluorescent indicators. The temperature measuring structure is used to measure the temperature of the fluorescent indicator after heating the wafer, so as to obtain the heating temperature and heating time of the fluorescent indicator according to the baking time of the fluorescent indicator calibrated in the wafer surface temperature measurement method, the temperature of the fluorescent indicator after baking in different time periods, and the temperature of the fluorescent indicator on the wafer, thereby obtaining the heating temperature and heating time of the corresponding position on the wafer surface. The wafer surface temperature measuring device can simultaneously obtain the temperature of the wafer surface and the time when the wafer is heated, thereby obtaining the real heat work absorbed by the wafer surface, and does not require the use of electronic temperature measuring chips and wireless modules, thereby improving the service life.

[0054] In one embodiment, the cavities 11 are blind holes opened on the same surface of the wafer 1, and the blind holes are evenly spaced. In this embodiment, the cavities 11 are formed by opening blind holes on the same surface of the wafer 1, without adding other materials to the upper portion of the wafer 1 to form the cavities, and the cavity 11 is simply manufactured.

[0055] Optionally, the cavities 11 are distributed in an array on the surface of the wafer 1; or the cavities 11 are evenly distributed along the center circumference of the wafer 1. For example, see Figure 3 The cavities 11 are arranged in multiple rows and columns, with equal spacing between each two cavities 11. In this embodiment, the cavities 11 are evenly spaced across the wafer 1. Measuring the temperature of the fluorescent indicator 2 within the cavity 11 is equivalent to obtaining the temperature at the corresponding position on the wafer 1, thereby obtaining the temperature distribution across the entire surface of the wafer 1. After obtaining the temperature at the corresponding position on the wafer 1, the analysis system can plot a temperature distribution map of the wafer 1 surface, helping operators fully understand the temperature conditions on the wafer 1.

[0056] Figure 4 A schematic diagram of the structure of a cavity and a window provided on a wafer of a wafer surface temperature measuring device provided by an embodiment of the present invention, Figure 5 A top view of a wafer and a cavity provided on the wafer of the wafer surface temperature measuring device provided by an embodiment of the present invention. Figure 4 and Figure 5 Furthermore, a window 12 is provided on the cavity 11, and the window 12 is used to observe changes in the fluorescent indicator 2. In this embodiment, by providing the window 12 on the cavity 11, it is convenient to observe the fluorescent reaction of the fluorescent indicator 2 in the cavity 11 through the window 12. For example, the fluorescent indicator 2 will exhibit different intensities of fluorescence when it is not heated and when it is heated. The fluorescence phenomenon of the fluorescent indicator 2 in the cavity 11 can be easily observed through the window 12.

[0057] Optionally, the window 12 is made of quartz, sapphire, magnesium aluminum spinel, or aluminum oxynitride; the window 12 is bonded to the surface of the wafer 1. In this embodiment, the window 12 is made of quartz, sapphire, magnesium aluminum spinel, or aluminum oxynitride, and has a long service life. The window 12 is bonded to the surface of the wafer 1, and the connection between the window 12 and the wafer 1 is simple, making it easy to manufacture.

[0058] Exemplarily, the window 12 is parallel to the surface of the wafer 1, the window 12 is higher than the surface of the wafer 1, or the window 12 is flush with the surface of the wafer 1. Figure 4 As shown, the position of the window 12 is higher than the plane of the wafer 1. The connection method of the window 12 and the wafer 1 in this structure is simpler than when the window 12 is flush with the surface of the wafer 1. Figure 5 As shown, the window 12 is flush with the surface of the wafer 1, so that the surface of the wafer 1 remains flat. When the surface of the window 12 is flush with the surface of the wafer 1, it is easier to adjust the overall weight to be consistent with the weight of the original wafer 1.

[0059] In the above embodiment, the weight of the window 12 can be adjusted to keep the total weight consistent with the weight of the original wafer 1. That is, the weight of the window 12 + fluorescent indicator 2 + wafer 1 is consistent with the weight of the original wafer 1 without the cavity 11, which is convenient for the robot to transfer the wafer.

[0060] In one specific embodiment, the outer contour of the opening of the cavity 11 is circular, and the diameter of the outer contour of the opening of the cavity 11 is 1-10 mm. Of course, in other embodiments, the outer contour of the opening of the cavity 11 can also be rectangular. When the outer contour of the opening of the cavity 11 is rectangular, the length or width of the outer contour of the opening of the cavity 11 is 1-10 mm. Technicians can pre-set the size of the cavity 11 based on the size of the wafer 1.

[0061] In the above embodiment, the filling thickness of the fluorescent indicator 2 in the cavity 11 is 0.1-0.5 mm. The filling thickness of the fluorescent indicator 2 in the cavity 11 has a certain value, which can ensure the accuracy of the temperature acquisition.

[0062] In the above embodiment, the temperature measurement structure 3 is a fluorescent fiber temperature measurement structure. The fluorescent fiber temperature measurement structure of this embodiment includes a fiber probe 31 and a temperature measurement and display platform 32. One end of the fiber probe 31 is connected to the temperature measurement and display platform 32, and the other end is used to obtain the light signal of the fluorescent indicator 2. When the wafer surface temperature measurement device of this embodiment is used to test a CVD machine, it is only necessary to place a wafer 1 provided with a fluorescent indicator 2 in the CVD machine chamber. After the wafer 1 is heated in the CVD machine chamber for a certain period of time, the wafer 1 is removed from the CVD machine chamber. At room temperature, the optical fiber probe 31 is used to obtain the fluorescence signal of the fluorescent indicator 2 at each cavity 11 on the wafer. The temperature measurement and display platform 32 can obtain the temperature of the fluorescent indicator 2 based on the fluorescence signal. The heating temperature and heating time of the fluorescent indicator 2 on the wafer are obtained based on the calibrated fluorescent indicator baking time, the temperature of the fluorescent indicator after baking for different time periods, and the temperature of the fluorescent indicator 2 on the wafer 1 in the wafer surface temperature measurement method described in the above embodiment, thereby obtaining the heating temperature and heating time of the corresponding position on the surface of the wafer 1. The temperature measurement principle of the fluorescent optical fiber temperature measurement structure in this embodiment is based on the existing technology and is not further described in this embodiment.

[0063] A wafer surface temperature measuring device provided by an embodiment of the present invention includes a wafer, a fluorescent indicator and a temperature measuring structure. A plurality of cavities are opened on the surface of the wafer, and the cavities are arranged at intervals. The cavities are used to accommodate the fluorescent indicators. The temperature measuring structure is used to measure the temperature of the fluorescent indicator after heating the wafer, so as to obtain the heating temperature and heating time of the fluorescent indicator according to the baking time of the fluorescent indicator calibrated in the wafer surface temperature measurement method, the temperature of the fluorescent indicator after baking for different time periods, and the temperature of the fluorescent indicator on the wafer, thereby obtaining the heating temperature and heating time of the corresponding position on the wafer surface. The wafer surface temperature measuring device can simultaneously obtain the temperature of the wafer surface and the time when the wafer is heated, thereby obtaining the actual heat work absorbed by the wafer surface, and does not require the use of an electronic temperature measuring chip and a wireless module, thereby improving the service life.

[0064] In the above description, the reference terms "one embodiment", "some embodiments", "example", "specific example", etc. mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.

[0065] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A wafer surface temperature measurement method, characterized in that: include: calcining the fluorescent indicator at different preset temperatures, and calibrating the temperature of the fluorescent indicator after calcination at the same temperature for different time periods; Heating a wafer provided with the fluorescent indicator, wherein the fluorescent indicator is distributed at intervals at preset positions of the wafer; Obtaining the temperature of the fluorescent indicator on the wafer; The heating temperature and heating time of the fluorescent indicator are obtained according to the baking temperature of the fluorescent indicator, the temperature of the fluorescent indicator after baking in different time periods, and the temperature of the fluorescent indicator on the wafer, thereby obtaining the heating temperature and heating time of the corresponding position on the wafer surface.

2. The wafer surface temperature measurement method according to claim 1, characterized in that: In the method of baking the fluorescent indicator at different preset temperatures and calibrating the temperature of the fluorescent indicator after baking at the same temperature for different time periods, the different preset temperatures increase at preset temperature intervals, and the different time periods increase at preset time intervals.

3. The wafer surface temperature measurement method according to claim 2, characterized in that: The wafer provided with the fluorescent indicator is heated, wherein the fluorescent indicator is distributed at intervals on preset positions of the wafer, and the preset positions are a plurality of cavities opened on the surface of the wafer and arranged at intervals.

4. The wafer surface temperature measurement method according to claim 3, characterized in that: In the heating of the wafer provided with the indicator, the wafer is heated by a temperature equalizing plate, a heating plate or a constant temperature bath.

5. A wafer surface temperature measuring device, characterized in that: It includes a wafer, a fluorescent indicator and a temperature measurement structure; A plurality of cavities are provided on the surface of the wafer, the cavities are arranged at intervals, the cavities are used to accommodate the fluorescent indicator, and the temperature measuring structure is used to obtain the temperature of the fluorescent indicator after the wafer is heated, and the heating temperature and heating time of the fluorescent indicator are obtained according to the baking time of the fluorescent indicator calibrated in the wafer surface temperature measurement method according to any one of claims 1 to 4, the temperature of the fluorescent indicator after baking for different time periods, and the temperature of the fluorescent indicator on the wafer, thereby obtaining the heating temperature and heating time of the corresponding position on the wafer surface.

6. The wafer surface temperature measuring device according to claim 5, characterized in that: The cavity is a blind hole opened on the same surface of the wafer, and the blind holes are evenly arranged at intervals.

7. The wafer surface temperature measuring device according to claim 6, characterized in that: The cavities are distributed in an array on the surface of the wafer; or the cavities are evenly distributed along the center circumference of the wafer.

8. The wafer surface temperature measuring device according to claim 5, characterized in that: The fluorescent indicator is KLa(MoO4) 2+ 、Eu 3+ :La2O2S、Cr:YAG、Nd:Glass、Cr 3+ :LiSrAlF6, Cr:Al2O3, Nd:YAG, Cr:BeAl2O3; or the fluorescent indicator is doped with Nd 3+ Fluorescent materials, doped with Tm 3+ Fluorescent materials, doped with Er 3+ Fluorescent materials, or doped with Cr 3+ of fluorescent materials.

9. The wafer surface temperature measuring device according to claim 5, characterized in that: The cavity is provided with a window, and the window is used to observe the change of the fluorescent indicator.

10. The wafer surface temperature measuring device according to claim 9, characterized in that: The window is a quartz window, a sapphire window, a magnesium aluminum spinel window, or an aluminum nitride oxide window; the window is bonded to the surface of the wafer.

11. The wafer surface temperature measuring device according to claim 9, characterized in that: The viewing window is parallel to the surface of the wafer, the viewing window is higher than the surface of the wafer, or the viewing window is flush with the surface of the wafer.

12. The wafer surface temperature measuring device according to any one of claims 5 to 11, characterized in that: The outer contour of the cavity opening is circular, and the diameter of the circle is 1-10 mm; Alternatively, the outer contour of the cavity opening is a rectangle, and the length or width of the rectangle is 1-10 mm; The filling thickness of the fluorescent indicator inside the cavity is 0.1-0.5 mm.

13. The wafer surface temperature measuring device according to any one of claims 5 to 11, characterized in that: The temperature measurement structure is a fluorescent optical fiber temperature measurement structure, which includes an optical fiber probe and a temperature measurement display platform. One end of the optical fiber probe is connected to the temperature measurement display platform, and the other end of the optical fiber probe is used to obtain the light signal of the fluorescent indicator.

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