Method and device for collecting metal on surface of silicon wafer

Abstract

The invention provides a method and device for collecting metal on the surface of a silicon wafer, and belongs to the technical field of semiconductor manufacturing. The silicon wafer surface metal collecting device comprises an objective table used for bearing a silicon wafer and capable of bearing the silicon wafer to rotate along with the objective table; the scanning head is arranged on one side of the objective table and is used for sucking scanning liquid to scan the silicon wafer and transmitting a positioning signal; the detector is fixed on one side of the objective table and is used for receiving the positioning signal emitted by the scanning head and detecting the linear distance between the detector and the scanning head according to the positioning signal; and the controller is used for controlling the motion states of the scanning head and the detector according to the linear distance between the detector and the scanning head. According to the invention, scanning of a fan-shaped metal collection area can be realized.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a method and device for collecting metal on the surface of a silicon wafer. Background Art

[0002] Currently, metal collection on silicon wafer surfaces is done using Figure 1 The metal collecting device shown uses a nozzle in the metal collecting device to absorb scanning liquid to collect metal on the surface of the silicon wafer, and detects the metal content in the scanning liquid by inductively coupled plasma-mass spectrometry (ICP-MS).

[0003] In the prior art, the metal collection on the silicon wafer surface is realized by moving the nozzle from the center of the silicon wafer along the radial direction of the silicon wafer, and at the same time, the silicon wafer carrier in the metal collection device drives the silicon wafer to rotate, so the scanning method is spiral scanning. The spiral scanning causes the metal collection area to be mainly circular (such as Figure 2 as shown) or annular (as Figure 3 ), but cannot achieve scanning of metal collection areas of other shapes. Summary of the invention

[0004] In order to solve the above technical problems, the present invention provides a method and device for collecting metal on the surface of a silicon wafer, which can realize scanning of a fan-shaped metal collection area.

[0005] In order to achieve the above object, the technical solution adopted by the embodiment of the present invention is:

[0006] A silicon wafer surface metal collection device, comprising:

[0007] A stage for carrying a silicon wafer, capable of carrying the silicon wafer and rotating along with the stage;

[0008] A scanning head disposed on one side of the stage, used to absorb scanning liquid to scan the silicon wafer and emit a positioning signal;

[0009] A detector fixed on one side of the stage, used to receive the positioning signal emitted by the scanning head, and detect the straight-line distance between the detector and the scanning head according to the positioning signal;

[0010] A controller is used to control the motion state of the scanning head and the detector according to the straight-line distance between the detector and the scanning head.

[0011] In some embodiments, the device further comprises:

[0012] A rotating bracket fixed on the stage, wherein the first end of the rotating bracket can move along the radial direction of the stage;

[0013] A scanning arm is fixed to the first end of the rotating bracket, the scanning arm extends in a vertical direction, and the scanning head is arranged on the scanning arm and can move up and down along the scanning arm.

[0014] In some embodiments, the controller is specifically used to control the scanning head and the detector to move to a starting scanning position on the silicon wafer; and repeatedly perform the scanning step until the detector and the scanning head reach a target scanning position;

[0015] The scanning step includes: controlling the detector to rotate from a current position around the center of the silicon wafer in a first direction, and stopping the rotation when the straight-line distance between the detector and the scanning head reaches a preset distance for the first or second time; controlling the scanning liquid absorbed by the scanning head to contact the silicon wafer; controlling the detector and the stage to rotate around the center of the silicon wafer in a second direction opposite to the first direction at the same angular velocity, and stopping the rotation when the distance between the detector and the scanning head is 0;

[0016] Control the detector and the scanning head to move a first distance simultaneously in the radial direction of the silicon wafer toward the center of the silicon wafer, control the detector to rotate from the current position around the center of the silicon wafer in a second direction, and stop rotating when the straight-line distance between the detector and the scanning head reaches a preset distance for the first or second time; control the scanning liquid sucked by the scanning head to contact the silicon wafer; control the detector and the stage to rotate around the center of the silicon wafer in the first direction at the same angular velocity, and stop rotating when the distance between the detector and the scanning head is 0;

[0017] The first direction and the second direction are selected from a clockwise direction and a counterclockwise direction.

[0018] In some embodiments, the target scanning position is the center of the silicon wafer or a point on the inner arc edge of any sector-shaped area on the silicon wafer.

[0019] In some embodiments, the preset distance d satisfies:

[0020]

[0021] Among them, when the angle corresponding to the target sector area to be scanned is less than or equal to 180 degrees, α is the angle corresponding to the target sector area to be scanned; when the angle corresponding to the target sector area to be scanned is greater than 180 degrees, α is the supplementary angle of the angle corresponding to the target sector area to be scanned, and R is the distance between the detector and the center of the silicon wafer.

[0022] The embodiment of the present invention further provides a method for collecting metal on the surface of a silicon wafer, which is applied to the above-mentioned device for collecting metal on the surface of a silicon wafer, and the method comprises:

[0023] Control the stage to carry the silicon wafer and rotate along with the stage;

[0024] Controlling the scanning head to absorb scanning liquid to scan the silicon wafer and emit a positioning signal;

[0025] Controlling the detector to receive the positioning signal emitted by the scanning head, and detecting the straight-line distance between the detector and the scanning head according to the positioning signal;

[0026] The motion states of the scanning head and the detector are controlled according to the linear distance between the detector and the scanning head.

[0027] In some embodiments, controlling the motion state of the scanning head and the detector according to the linear distance between the detector and the scanning head comprises:

[0028] Controlling the scanning head and the detector to move to a starting scanning position on the silicon wafer; and repeatedly performing the scanning step until the detector and the scanning head reach a target scanning position;

[0029] The scanning step includes: controlling the detector to rotate from a current position around the center of the silicon wafer in a first direction, and stopping the rotation when the straight-line distance between the detector and the scanning head reaches a preset distance for the first or second time; controlling the scanning liquid absorbed by the scanning head to contact the silicon wafer; controlling the detector and the stage to rotate around the center of the silicon wafer in a second direction opposite to the first direction at the same angular velocity, and stopping the rotation when the distance between the detector and the scanning head is 0;

[0030] Control the detector and the scanning head to move a first distance simultaneously in the radial direction of the silicon wafer toward the center of the silicon wafer, control the detector to rotate from the current position around the center of the silicon wafer in a second direction, and stop rotating when the straight-line distance between the detector and the scanning head reaches a preset distance for the first or second time; control the scanning liquid sucked by the scanning head to contact the silicon wafer; control the detector and the stage to rotate around the center of the silicon wafer in the first direction at the same angular velocity, and stop rotating when the distance between the detector and the scanning head is 0;

[0031] The first direction and the second direction are selected from a clockwise direction and a counterclockwise direction.

[0032] In some embodiments, the preset distance d satisfies:

[0033]

[0034] Among them, when the angle corresponding to the target sector area to be scanned is less than or equal to 180 degrees, α is the angle corresponding to the target sector area to be scanned; when the angle corresponding to the target sector area to be scanned is greater than 180 degrees, α is the supplementary angle of the angle corresponding to the target sector area to be scanned, and R is the distance between the detector and the center of the silicon wafer.

[0035] An embodiment of the present invention further provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the steps of the method for collecting metal on the surface of a silicon wafer as described above are implemented.

[0036] An embodiment of the present invention further provides a computer program product, including computer instructions, which, when executed by a processor, implement the steps of the method for collecting metal on the surface of a silicon wafer as described above.

[0037] The beneficial effects of the present invention are:

[0038] In this embodiment, the scanning head absorbs the scanning liquid to scan the silicon wafer and transmits a positioning signal; the detector receives the positioning signal transmitted by the scanning head and detects the straight-line distance between the detector and the scanning head according to the positioning signal; the controller controls the motion state of the scanning head and the detector according to the straight-line distance between the detector and the scanning head. Through the control of the motion state of the scanning head and the detector by the controller, the preset area for metal collection on the surface of the silicon wafer can be a scanning area of ​​various shapes, including a fan-shaped area of ​​a preset angle. Compared with the prior art that can only perform metal scanning by spiral scanning, this embodiment enriches the scanning method for metal collection on the surface of the silicon wafer, and also enriches the shape of the scanning area (i.e., the metal collection area), and can realize surface scanning of the fan-shaped area at any angle, effectively improving the operability and accuracy of silicon wafer surface analysis. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 A schematic diagram showing the structure of an existing metal collecting device;

[0040] Figure 2 Schematic diagram showing that the metal collection area is circular;

[0041] Figure 3 A schematic diagram showing that the metal collection area is a ring;

[0042] Figure 4 and Figure 5 A schematic diagram showing the structure of a device for collecting metal on a silicon wafer surface according to an embodiment of the present invention;

[0043] Figure 6 A schematic diagram showing a scanning trajectory according to an embodiment of the present invention;

[0044] Figure 7 A schematic diagram showing the relationship between the straight-line distance d between the detector and the scanning head and the angle α of the sector area according to an embodiment of the present invention.

[0045] Reference numerals

[0046] 1 Stage

[0047] 2 Swivel bracket

[0048] 3 Scanning head

[0049] 4 Detectors

[0050] 5 Scanning Arm DETAILED DESCRIPTION

[0051] In order to make the purpose, technical solution and advantages of the embodiment of the present invention clearer, the technical solution of the embodiment of the present invention will be clearly and completely described below in conjunction with the drawings of the embodiment of the present invention. Obviously, the described embodiment is a part of the embodiment of the present invention, not all of the embodiments. Based on the described embodiment of the present invention, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present invention.

[0052] During the production and processing of semiconductor silicon wafers, for example, during the cutting or polishing process, some fan-shaped or semi-fan-shaped processing defects or damages often occur. At this time, it is necessary to perform specific analysis and testing on the local position of the silicon wafer, so it is necessary to collect surface metals from the fan-shaped or semi-fan-shaped area of ​​the silicon wafer. The present invention provides a method and device for collecting metals on the surface of a silicon wafer, which can realize the scanning of the fan-shaped metal collection area.

[0053] The embodiment of the present invention provides a device for collecting metal on the surface of a silicon wafer, such as Figure 4 and Figure 5 As shown, including:

[0054] A stage 1 for carrying a silicon wafer, capable of carrying the silicon wafer and rotating along with the stage 1;

[0055] A scanning head 3 disposed on one side of the stage 1 is used to absorb scanning liquid to scan the silicon wafer and emit a positioning signal;

[0056] The detector 4 fixed on one side of the stage 1 is used to receive the positioning signal emitted by the scanning head 3 and detect the straight-line distance between the detector 4 and the scanning head 3 according to the positioning signal;

[0057] The controller is used to control the motion state of the scanning head 3 and the detector 4 according to the straight-line distance between the detector 4 and the scanning head 3 .

[0058] In this embodiment, the scanning head 3 absorbs the scanning liquid to scan the silicon wafer and transmits a positioning signal; the detector 4 receives the positioning signal transmitted by the scanning head 3, and detects the straight-line distance between the detector 4 and the scanning head 3 according to the positioning signal; the controller controls the motion state of the scanning head 3 and the detector 4 according to the straight-line distance between the detector 4 and the scanning head 3. Through the control of the motion state of the scanning head 3 and the detector 4 by the controller, the preset area for metal collection on the surface of the silicon wafer can be a scanning area of ​​various shapes, including a fan-shaped area of ​​a preset angle. Compared with the prior art that can only perform metal scanning by spiral scanning, this embodiment enriches the scanning method for metal collection on the surface of the silicon wafer, and also enriches the shape of the scanning area (i.e., the metal collection area), and can realize surface scanning of the fan-shaped area at any angle, which effectively improves the operability and accuracy of silicon wafer surface analysis.

[0059] In some embodiments, the device further comprises:

[0060] A rotating bracket 2 fixed on the stage 1, wherein the first end of the rotating bracket 2 can move along the radial direction of the stage 1;

[0061] A scanning arm 5 is fixed to a first end of the rotating bracket 2 , and the scanning arm 5 extends in a vertical direction. The scanning head 3 is disposed on the scanning arm 5 and can move up and down along the scanning arm 5 .

[0062] When scanning the silicon wafer, the relative position between the scanning head 3 and the silicon wafer can be adjusted by rotating the bracket 2; the scanning liquid on the scanning head 3 can be controlled to contact or lose contact with the silicon wafer by adjusting the position of the scanning head 3 on the scanning arm 5.

[0063] In some embodiments, the controller is specifically used to control the scanning head 3 and the detector 4 to move to the starting scanning position on the silicon wafer, and repeatedly perform the scanning step until the detector 4 and the scanning head 3 reach the target scanning position;

[0064] The scanning step includes: controlling the detector 4 to rotate around the center of the silicon wafer in a first direction from a current position, and stopping the rotation when the straight-line distance between the detector 4 and the scanning head 3 reaches a preset distance for the first or second time; controlling the scanning liquid absorbed by the scanning head 3 to contact the silicon wafer; controlling the detector 4 and the stage to rotate around the center of the silicon wafer in a second direction opposite to the first direction at the same angular velocity, and stopping the rotation when the distance between the detector 4 and the scanning head 3 is 0;

[0065] Control the detector 4 and the scanning head 3 to move a first distance in the radial direction of the silicon wafer toward the center of the silicon wafer at the same time, control the detector 4 to rotate from the current position around the center of the silicon wafer in a second direction, and stop rotating when the straight-line distance between the detector 4 and the scanning head 3 reaches a preset distance for the first or second time; control the scanning liquid absorbed by the scanning head 3 to contact the silicon wafer; control the detector 4 and the stage to rotate around the center of the silicon wafer in the first direction at the same angular velocity, and stop rotating when the distance between the detector 4 and the scanning head 3 is 0;

[0066] The first direction and the second direction are selected from a clockwise direction and a counterclockwise direction.

[0067] By repeatedly performing the above scanning steps, we can obtain Figure 6 The scanning trajectory shown is used to achieve surface scanning of a fan-shaped area at any angle.

[0068] In the above scanning steps, when the angle corresponding to the target sector area to be scanned is less than or equal to 180 degrees, the rotation is stopped when the straight-line distance between the detector 4 and the scanning head 3 reaches the preset distance for the first time; when the angle corresponding to the target sector area to be scanned is greater than 180 degrees, the rotation is stopped when the straight-line distance between the detector 4 and the scanning head 3 reaches the preset distance for the second time.

[0069] In this embodiment, the starting scanning position on the silicon wafer may be a position point on the edge of the silicon wafer, and the target scanning position may be the center of the circle of the silicon wafer, so that a sector-shaped area on the silicon wafer (the radius of the sector-shaped area is the same as the radius of the silicon wafer) can be scanned. Alternatively, the starting scanning position on the silicon wafer may also be a point on the outer arc edge of any sector-shaped area on the silicon wafer, and the target scanning position may also be a point on the arc edge of any sector-shaped area on the silicon wafer, so that any sector-shaped area on the silicon wafer (the radius of the sector-shaped area is smaller than the radius of the silicon wafer) can be scanned.

[0070] Taking scanning of a sector area with an angle of α on a silicon wafer as an example, the scanning head 3 and the detector 4 first move to the edge of the silicon wafer, or the outer arc edge of the sector area to be tested, and then the scanning head 3 remains stationary, and the detector 4 rotates clockwise or counterclockwise along the center direction of the silicon wafer. When the detector 4 detects that the linear distance between it and the scanning head 3 is d, as shown in FIG. Figure 7 As shown, the following formula can be used to determine whether the fan angle α is reached:

[0071]

[0072] Among them, when the angle corresponding to the target sector area to be scanned is less than or equal to 180 degrees, α is the angle corresponding to the target sector area to be scanned; when the angle corresponding to the target sector area to be scanned is greater than 180 degrees, α is the supplementary angle of the angle corresponding to the target sector area to be scanned, and R is the distance between the detector and the center of the silicon wafer.

[0073] When scanning starts, the first step of scanning includes: when the straight-line distance d between the scanning head 3 and the detector 4 satisfies formula (1), the scanning head 3 moves vertically downward so that the scanning liquid in the scanning head 3 contacts the surface of the silicon wafer, and the detector 4 drives the silicon wafer to rotate counterclockwise or clockwise at the same angular velocity along with the stage 1. When the straight-line distance d between the scanning head 3 and the detector 4 is 0, the first step of scanning ends. In the second step of scanning, the scanning head 3 and the detector 4 simultaneously move a certain distance toward the center of the silicon wafer, and the detector 4 rotates counterclockwise or clockwise along the center of the silicon wafer. When the detector 4 detects that the straight-line distance between the scanning head 3 and the detector 4 is d, the detector 4 stops moving, and the scanning head 3 moves vertically downward again so that the scanning liquid in the scanning head 3 contacts the surface of the silicon wafer, and the detector 4 drives the silicon wafer to rotate clockwise or counterclockwise at the same angular velocity along with the stage 1. When the straight-line distance d between the scanning head 3 and the detector 4 is 0, the second step of scanning ends. The above two steps of scanning are repeated, and the scanning ends when the detector 4 or the scanning head 3 reaches the center of the silicon wafer or the inner arc edge of the target sector area on the silicon wafer.

[0074] When the straight-line distance between the detector 4 and the scanning head 3 is d, the angle formed by the line between the detector 4 and the center of the silicon wafer and the line between the scanning head 3 and the center of the silicon wafer is the angle or supplementary angle α corresponding to the target sector area to be scanned.

[0075] When the angle corresponding to the target sector area to be scanned is greater than 180°, similar to the above scanning action, the angle between the detector 4 and the scanning head 3 reaches the supplementary angle α, and then the action and scanning are performed in the opposite direction.

[0076] The embodiment of the present invention further provides a method for collecting metal on the surface of a silicon wafer, which is applied to the above-mentioned device for collecting metal on the surface of a silicon wafer, and the method comprises:

[0077] Control the stage 1 to carry the silicon wafer and rotate along with the stage 1;

[0078] Controlling the scanning head 3 to absorb scanning liquid to scan the silicon wafer and emit a positioning signal;

[0079] Controlling the detector 4 to receive the positioning signal emitted by the scanning head 3, and detecting the straight-line distance between the detector 4 and the scanning head 3 according to the positioning signal;

[0080] The movement states of the scanning head 3 and the detector 4 are controlled according to the straight-line distance between the detector 4 and the scanning head 3 .

[0081] In this embodiment, the stage 1 is used to carry the silicon wafer, and the silicon wafer can rotate with the stage 1. The scanning head 3 and the detector 4 are fixed by the rotating bracket 2 respectively. The scanning head 3 is used to absorb the scanning liquid to scan the silicon wafer, and the outer circle of the scanning head 3 can transmit signals. The outer circle of the detector 4 has a detection function, which can receive the signal emitted by the scanning head 3, so as to detect the straight-line distance between the detector 4 and the scanning head 3. The scanning head 3 and the detector 4 can move radially toward the center of the silicon wafer along the support arm of the rotating bracket 2. In addition, the scanning head 3 can move up and down in the vertical direction along the scanning arm 5 of the rotating bracket.

[0082] In some embodiments, controlling the motion state of the scanning head 3 and the detector 4 according to the straight-line distance between the detector 4 and the scanning head 3 includes:

[0083] Controlling the scanning head 3 and the detector 4 to move to the starting scanning position on the silicon wafer; and repeatedly performing the scanning step until the detector and the scanning head reach the target scanning position;

[0084] The scanning step includes: controlling the detector 4 to rotate around the center of the silicon wafer in a first direction from a current position, and stopping the rotation when the straight-line distance between the detector 4 and the scanning head 3 reaches a preset distance for the first or second time; controlling the scanning liquid absorbed by the scanning head 3 to contact the silicon wafer; controlling the detector 4 and the stage to rotate around the center of the silicon wafer in a second direction opposite to the first direction at the same angular velocity, and stopping the rotation when the distance between the detector 4 and the scanning head 3 is 0;

[0085] Control the detector 4 and the scanning head 3 to move a first distance in the radial direction of the silicon wafer toward the center of the silicon wafer at the same time, control the detector 4 to rotate from the current position around the center of the silicon wafer in a second direction, and stop rotating when the straight-line distance between the detector 4 and the scanning head 3 reaches a preset distance for the first or second time; control the scanning liquid absorbed by the scanning head 3 to contact the silicon wafer; control the detector 4 and the stage to rotate around the center of the silicon wafer in the first direction at the same angular velocity, and stop rotating when the distance between the detector 4 and the scanning head 3 is 0;

[0086] The first direction and the second direction are selected from a clockwise direction and a counterclockwise direction.

[0087] In the above scanning steps, when the angle corresponding to the target sector area to be scanned is less than or equal to 180 degrees, the rotation is stopped when the straight-line distance between the detector 4 and the scanning head 3 reaches the preset distance for the first time; when the angle corresponding to the target sector area to be scanned is greater than 180 degrees, the rotation is stopped when the straight-line distance between the detector 4 and the scanning head 3 reaches the preset distance for the second time.

[0088] In this embodiment, the starting scanning position on the silicon wafer may be a position point on the edge of the silicon wafer, and the target scanning position may be the center of the circle of the silicon wafer, so that a sector-shaped area on the silicon wafer (the radius of the sector-shaped area is the same as the radius of the silicon wafer) can be scanned. Alternatively, the starting scanning position on the silicon wafer may also be a point on the outer arc edge of any sector-shaped area on the silicon wafer, and the target scanning position may also be a point on the arc edge of any sector-shaped area on the silicon wafer, so that any sector-shaped area on the silicon wafer (the radius of the sector-shaped area is smaller than the radius of the silicon wafer) can be scanned.

[0089] Taking scanning of a sector area with an angle of α on a silicon wafer as an example, the scanning head 3 and the detector 4 first move to the edge of the silicon wafer, or the outer arc edge of the sector area to be tested, and then the scanning head 3 remains stationary, and the detector 4 rotates clockwise or counterclockwise along the center direction of the silicon wafer. When the detector 4 detects that the linear distance between it and the scanning head 3 is d, as shown in FIG. Figure 7 As shown, the following formula can be used to determine whether the fan angle α is reached:

[0090]

[0091] Among them, when the angle corresponding to the target sector area to be scanned is less than or equal to 180 degrees, α is the angle corresponding to the target sector area to be scanned; when the angle corresponding to the target sector area to be scanned is greater than 180 degrees, α is the supplementary angle of the angle corresponding to the target sector area to be scanned, and R is the distance between the detector and the center of the silicon wafer.

[0092] The embodiment of the present invention also provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, each process of the above-mentioned silicon wafer surface metal collection method embodiment is implemented, and the same technical effect can be achieved. To avoid repetition, it is not repeated here. Among them, the computer-readable storage medium includes permanent and non-permanent, removable and non-removable media, and information storage can be realized by any method or technology. The information can be a computer-readable instruction, a data structure, a module of a program, or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, read-only compact disc read-only memory (CD-ROM), digital versatile disc (DVD) or other optical storage, magnetic cassette, magnetic tape magnetic disk storage or other magnetic storage terminal device to be detected or any other non-transmission medium, which can be used to store information that can be accessed by the terminal device to be detected. According to the definition in this article, computer-readable storage media does not include temporary computer-readable media (transitory media), such as modulated data signals and carrier waves.

[0093] The embodiment of the present application also provides a computer program product, including computer instructions. When the computer instructions are executed by a processor, the various processes of the above-mentioned method embodiment are implemented and the same technical effect can be achieved. To avoid repetition, they are not repeated here.

[0094] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0095] Through the description of the above implementation methods, those skilled in the art can clearly understand that the above-mentioned embodiment methods can be implemented by means of software plus a necessary general hardware platform, and of course by hardware, but in many cases the former is a better implementation method. Based on such an understanding, the technical solution of the present invention, or the part that contributes to the prior art, can be embodied in the form of a software product, which is stored in a storage medium (such as ROM / RAM, a magnetic disk, or an optical disk), and includes a number of instructions for enabling a terminal (which can be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) to execute the methods described in each embodiment of the present invention.

[0096] In the various method embodiments of the present disclosure, the serial numbers of the steps cannot be used to limit the sequence of the steps. For ordinary technicians in this field, without paying any creative work, changes to the sequence of the steps are also within the protection scope of the present disclosure.

[0097] It should be noted that each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the embodiments, since they are basically similar to the product embodiments, the description is relatively simple, and the relevant parts can be referred to the partial description of the product embodiments.

[0098] The above is a preferred embodiment of the present disclosure. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles described in the present disclosure. These improvements and modifications should also be regarded as the scope of protection of the present disclosure.

Claims

1. A metal collection device on a silicon wafer surface, characterized in that: include: A stage for carrying a silicon wafer, capable of carrying the silicon wafer and rotating along with the stage; A scanning head disposed on one side of the stage, used to absorb scanning liquid to scan the silicon wafer and emit a positioning signal; A detector fixed on one side of the stage, used to receive the positioning signal emitted by the scanning head, and detect the straight-line distance between the detector and the scanning head according to the positioning signal; A controller is used to control the motion state of the scanning head and the detector according to the straight-line distance between the detector and the scanning head.

2. The silicon wafer surface metal collection device according to claim 1, characterized in that: The device also includes: A rotating bracket fixed on the stage, wherein the first end of the rotating bracket can move along the radial direction of the stage; A scanning arm is fixed to the first end of the rotating bracket, the scanning arm extends in a vertical direction, and the scanning head is arranged on the scanning arm and can move up and down along the scanning arm.

3. The silicon wafer surface metal collection device according to claim 1, characterized in that: The controller is specifically used to control the scanning head and the detector to move to the starting scanning position on the silicon wafer; and repeatedly performing the scanning step until the detector and the scanning head reach the target scanning position; The scanning step includes: controlling the detector to rotate from a current position around the center of the silicon wafer in a first direction, and stopping the rotation when the straight-line distance between the detector and the scanning head reaches a preset distance for the first or second time; controlling the scanning liquid absorbed by the scanning head to contact the silicon wafer; controlling the detector and the stage to rotate around the center of the silicon wafer in a second direction opposite to the first direction at the same angular velocity, and stopping the rotation when the distance between the detector and the scanning head is 0; Control the detector and the scanning head to move a first distance simultaneously in the radial direction of the silicon wafer toward the center of the silicon wafer, control the detector to rotate from the current position around the center of the silicon wafer in a second direction, and stop rotating when the straight-line distance between the detector and the scanning head reaches a preset distance for the first or second time; control the scanning liquid sucked by the scanning head to contact the silicon wafer; control the detector and the stage to rotate around the center of the silicon wafer in the first direction at the same angular velocity, and stop rotating when the distance between the detector and the scanning head is 0; The first direction and the second direction are selected from a clockwise direction and a counterclockwise direction.

4. The silicon wafer surface metal collection device according to claim 3, characterized in that: The target scanning position is the center of the silicon wafer or a point on the inner arc edge of any sector-shaped area on the silicon wafer.

5. The silicon wafer surface metal collection device according to claim 3, characterized in that: The preset distance d satisfies: Among them, when the angle corresponding to the target sector area to be scanned is less than or equal to 180 degrees, α is the angle corresponding to the target sector area to be scanned; when the angle corresponding to the target sector area to be scanned is greater than 180 degrees, α is the supplementary angle of the angle corresponding to the target sector area to be scanned, and R is the distance between the detector and the center of the silicon wafer.

6. A method for collecting metal on the surface of a silicon wafer, characterized in that: The device for collecting metal on the surface of a silicon wafer according to any one of claims 1 to 5, wherein the method comprises: Control the stage to carry the silicon wafer and rotate along with the stage; Controlling the scanning head to absorb scanning liquid to scan the silicon wafer and emit a positioning signal; Controlling the detector to receive the positioning signal emitted by the scanning head, and detecting the straight-line distance between the detector and the scanning head according to the positioning signal; The motion states of the scanning head and the detector are controlled according to the linear distance between the detector and the scanning head.

7. The method for collecting metal on the surface of a silicon wafer according to claim 6, characterized in that: The controlling the motion state of the scanning head and the detector according to the linear distance between the detector and the scanning head comprises: Controlling the scanning head and the detector to move to a starting scanning position on the silicon wafer; and repeatedly performing the scanning step until the detector and the scanning head reach a target scanning position; The scanning step includes: controlling the detector to rotate from a current position around the center of the silicon wafer in a first direction, and stopping the rotation when the straight-line distance between the detector and the scanning head reaches a preset distance for the first or second time; controlling the scanning liquid absorbed by the scanning head to contact the silicon wafer; controlling the detector and the stage to rotate around the center of the silicon wafer in a second direction opposite to the first direction at the same angular velocity, and stopping the rotation when the distance between the detector and the scanning head is 0; Control the detector and the scanning head to move a first distance simultaneously in the radial direction of the silicon wafer toward the center of the silicon wafer, control the detector to rotate from the current position around the center of the silicon wafer in a second direction, and stop rotating when the straight-line distance between the detector and the scanning head reaches a preset distance for the first or second time; control the scanning liquid sucked by the scanning head to contact the silicon wafer; control the detector and the stage to rotate around the center of the silicon wafer in the first direction at the same angular velocity, and stop rotating when the distance between the detector and the scanning head is 0; The first direction and the second direction are selected from a clockwise direction and a counterclockwise direction.

8. The method for collecting metal on the surface of a silicon wafer according to claim 7, characterized in that: The preset distance d satisfies: Among them, when the angle corresponding to the target sector area to be scanned is less than or equal to 180 degrees, α is the angle corresponding to the target sector area to be scanned; when the angle corresponding to the target sector area to be scanned is greater than 180 degrees, α is the supplementary angle of the angle corresponding to the target sector area to be scanned, and R is the distance between the detector and the center of the silicon wafer.

9. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the method for collecting metal on the surface of a silicon wafer according to any one of claims 6 to 8 are implemented.

10. A computer program product, characterized in that The method comprises computer instructions, which, when executed by a processor, implement the steps of the method for collecting metal on the surface of a silicon wafer as claimed in any one of claims 6 to 8.

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