NAND Flash dynamic frequency conversion method and device, equipment and medium
By conducting parameter training for different frequency points within different temperature ranges and monitoring the dynamic switching frequency of data volume changes in real time, the problem of high power consumption of SSD under different working conditions is solved, and the effect of reducing power consumption and heating under optimal performance is achieved.
Patent Information
- Application Number
- CN202411645717.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-18
- Publication Date
- 2025-03-25
AI Technical Summary
Existing SSDs cannot effectively reduce the power consumption of NAND Flash under different operating conditions (such as high temperature applications), resulting in unnecessary heating and power consumption increase.
By conducting parameter training for different frequency points in different temperature ranges, selecting the appropriate Timming Mode and frequency, and monitoring the amount of data sent to NAND Flash in unit time in real time, dynamically switch the frequency to match the status of the current data volume, thereby loading the timing parameters corresponding to the frequency after the switching.
While ensuring optimal performance, the overall power consumption of the SSD is reduced, the heating is reduced, and the stability of the product is enhanced.
Smart Images
Figure CN119690234A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of data storage technology, and in particular to a NAND Flash dynamic frequency conversion method, device, equipment and medium. Background Art
[0002] SSDs are generally composed of a storage controller and NAND Flash storage particles, as well as peripheral control circuits. The storage controller and NAND Flash are connected via a high-speed bus, and commands are exchanged via the ONFI / TOGGLE protocol. With the development of technology, the ONFI / TOGGLE protocol supports higher and higher clock frequencies, from the initial 33MHhz to the current maximum support of 1800Mhz. Under double data rate (DDR) conditions, the data transmission speed of each DQ (data bus) line is as high as 3.6Gbits / s.
[0003] The increase in data transmission rate also means that the power consumption of the interface circuit is higher. The power consumption has two parts: one is the NAND Flash interface control module on the controller side, and the other is the NAND Flash DIE (flash die) interface control module. However, in actual applications, many occasions do not require such a high Flash (flash memory) transmission rate. For example, for film and television storage, the host interface of the SSD (Solid State Drive) itself is PCIE Gen4X2 or Gen4X1. In theory, the host transmission rate is only 2GB / s or 4GB / s at most. The channels of the controller in the SSD are generally 4 to 16 channels. If the rate of each channel is 3.6GB / s, the maximum bandwidth that can be provided can reach 14.4GB to 57.6GB / s.
[0004] For example, in high-temperature applications, since SSDs generally have over-temperature protection, when the SSD temperature is too high, the amount of data received by the NAND Flash from the master controller will be greatly reduced. However, at this time, the NAND Flash still works at a higher frequency, causing unnecessary power consumption. Therefore, it is necessary to study power consumption reduction related to storage controllers and NAND Flash interfaces.
[0005] Currently, for NAND Flash frequency control, when the SSD is powered on, it will only configure the highest NAND Flash operating frequency by default, and train the parameters corresponding to the corresponding frequency point (DQ delay / delay between DQS and DQ, etc.), save the training results, and use the training results to read and write NAND Flash in the future without changing them. Since the single frequency does not change with the change of working conditions, the power consumption and heat generation of the SSD increase. Although some solutions will adjust the frequency according to the temperature, it is only for ensuring data integrity and cannot take into account performance requirements. Summary of the invention
[0006] The present application provides a NAND Flash dynamic frequency conversion method, device, equipment and medium, which can reduce the overall power consumption of the SSD while ensuring optimal performance, thereby reducing the heat generation of the SSD and enhancing the stability of the product.
[0007] In a first aspect, an embodiment of the present application provides a NAND Flash dynamic frequency conversion method, the NAND Flash dynamic frequency conversion method comprising:
[0008] Based on the specifications and performance of NAND Flash, select the frequencies corresponding to different Timing Modes, and perform parameter training at multiple set temperature points at each selected frequency;
[0009] According to the training results, the timing parameters of the storage controller and NAND Flash applicable to all set temperature points at each frequency are obtained;
[0010] Monitor the amount of data sent to NAND Flash per unit time in real time, switch the frequency according to the increase or decrease of the data volume, and load the timing parameters corresponding to the switched frequency.
[0011] In combination with the first aspect, in one implementation, the frequency corresponding to different Timing Modes is selected based on the specifications and performance of the NAND Flash, and parameter training of multiple set temperature points is performed at each selected frequency, specifically including:
[0012] Based on the specifications and performance of NAND Flash, multiple different Timing Modes are selected, and the corresponding frequency is selected for each Timing Mode;
[0013] The selected frequencies are obtained in sequence, and parameter training of a plurality of set temperature points is performed respectively at the obtained current frequencies.
[0014] In combination with the first aspect, in one implementation, obtaining the timing parameters of the storage controller and NAND Flash applicable to all set temperature points at each frequency according to the training results specifically includes:
[0015] According to the training results, the timing parameters of the storage controller and NAND Flash applicable to all set temperature points at the current frequency are obtained in turn, and the corresponding relationship between each selected frequency and the timing parameter is obtained.
[0016] In combination with the first aspect, in one embodiment, after obtaining the timing parameters of the storage controller and NAND Flash that are applicable to all set temperature points at the current frequency, when the SSD is produced, the correspondence between the frequency and the timing parameters is saved in the Nor Flash or NAND Flash key data area of the SSD.
[0017] In combination with the first aspect, in one implementation, the timing parameters include Drivestrength or ODT of the storage controller, Drivestrength or ODT of the NAND Flash, and DQ or DQS delay parameters of each channel of the storage controller.
[0018] In combination with the first aspect, in one implementation, the real-time monitoring of the amount of data sent to the NAND Flash per unit time and switching the frequency according to the increase or decrease of the amount of data specifically includes:
[0019] Monitor the amount of data sent to NAND Flash per unit time in real time, and based on the increase or decrease in the amount of data:
[0020] If the amount of data is decreasing, the NAND Flash is switched to a lower frequency accordingly;
[0021] If the amount of data is increasing, the NAND Flash is switched to a higher frequency accordingly.
[0022] In combination with the first aspect, in one implementation, the timing parameters corresponding to the frequency after loading switching specifically include:
[0023] Detect the current NAND Flash command status. If the NAND Flash data transmission is completed and is in the IDLE state, load the timing parameters corresponding to the switched frequency and initialize the storage controller and NAND Flash.
[0024] In a second aspect, an embodiment of the present application further provides a NAND Flash dynamic frequency conversion device, the NAND Flash dynamic frequency conversion device comprising:
[0025] The training module is used to select the frequency corresponding to different Timing Modes based on the specifications and performance of the NAND Flash, and perform parameter training at multiple set temperature points at each selected frequency;
[0026] A determination module, which is used to obtain timing parameters of a storage controller and a NAND Flash applicable to all set temperature points at each frequency according to the training results;
[0027] The switching module is used to monitor the amount of data sent to the NAND Flash per unit time in real time, switch the frequency according to the increase or decrease of the data volume, and load the timing parameters corresponding to the switched frequency.
[0028] In a third aspect, an embodiment of the present application further provides a NAND Flash dynamic frequency conversion device, wherein the NAND Flash dynamic frequency conversion device comprises a processor, a memory, and a NAND Flash dynamic frequency conversion program stored in the memory and executable by the processor, wherein when the NAND Flash dynamic frequency conversion program is executed by the processor, the steps of the above-mentioned NAND Flash dynamic frequency conversion method are implemented.
[0029] In a fourth aspect, an embodiment of the present application further provides a computer-readable storage medium, on which a NAND Flash dynamic frequency conversion program is stored. When the NAND Flash dynamic frequency conversion program is executed by a processor, the steps of the above-mentioned NAND Flash dynamic frequency conversion method are implemented.
[0030] The beneficial effects brought by the technical solution provided in the embodiments of the present application include:
[0031] By pre-training parameters at different frequency points in different temperature ranges, saving the parameter results, and dividing different frequency gears, different frequency gears are selected for switching and matching according to the amount of data currently interacting between the SSD and NAND Flash. In this way, the operating frequencies of the SSD master control and NAND Flash are dynamically switched according to the current data volume within different temperature ranges. While ensuring optimal performance, the overall power consumption of the SSD is reduced, thereby reducing the heat generation of the SSD and enhancing the stability of the product. BRIEF DESCRIPTION OF THE DRAWINGS
[0032] Figure 1 This is a flow chart of the NAND Flash dynamic frequency conversion method of this application;
[0033] Figure 2 This is a functional module diagram of the NAND Flash dynamic frequency conversion device of this application;
[0034] Figure 3 This is a schematic diagram of the hardware structure of the NAND Flash dynamic frequency conversion device of this application. DETAILED DESCRIPTION
[0035] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
[0036] In order to make the objectives, technical solutions and advantages of the present application clearer, the implementation methods of the present application will be further described in detail below with reference to the accompanying drawings.
[0037] On the first aspect, an embodiment of the present application provides a NAND Flash dynamic frequency change method, which performs parameter training in advance for different frequency points within different temperature ranges, saves the parameter results, divides different frequency gears, and then selects different frequency gears for switching and matching according to the amount of data currently interacting between the SSD and the NAND Flash, thereby reducing the power consumption of the NAND Flash and the main control interface while ensuring optimal performance and data security.
[0038] In one embodiment, referring to Figure 1 , Figure 1 This is a flow chart of the NAND Flash dynamic frequency conversion method of this application. Figure 1 As shown, the NAND Flash dynamic frequency conversion method includes:
[0039] S1: Based on the specifications and performance of NAND Flash, select the frequency corresponding to different Timing Modes, and perform parameter training at multiple set temperature points at each selected frequency;
[0040] Furthermore, in one embodiment, based on the specifications and performance of the NAND Flash, the frequencies corresponding to different Timing Modes are selected, and parameter training of multiple set temperature points is performed at each selected frequency, specifically including:
[0041] S1101: Based on the specifications and performance of the NAND Flash, multiple different Timing Modes are selected, and corresponding frequencies are selected for each Timing Mode;
[0042] Specifically, the frequency points corresponding to different Timing Modes are selected according to the NAND Flash specification. In actual applications, Timing Mode includes Mode0 to Mode19. For frequency selection, Mode0 is 33Mhz, Mode1 is 40Mhz, Mode2 is 66Mhz, Mode3 is 83Mhz, Mode4 is 100Mhz, Mode5 is 133Mhz, Mode6 is 166Mhz, Mode7 is 200Mhz, Mode8 is 266Mhz, Mode9 is 333Mhz, Mode10 is 400Mhz, Mode11 is 532Mhz, Mode12 is 600Mhz, Mode13 is 666Mhz, Mode14 is 733Mhz, Mode15 is 800Mhz, Mode16 is 1200Mhz, Mode17 is 1400Mhz, Mode18 is 1600Mhz, and Mode19 is 1800Mhz.
[0043] S102: The selected frequencies are acquired in sequence, and parameter training of a plurality of set temperature points is performed respectively under the acquired current frequencies.
[0044] After selecting the frequencies corresponding to different Timming Modes, perform parameter training for multiple set temperature points at different frequencies. For example, for Mode0's 33Mhz, perform parameter training for multiple set temperature points, for Mode1's 40Mhz, perform parameter training for multiple set temperature points, and so on. In actual applications, the set temperature points can be -20℃, 25℃, and 70℃. For example, the parameter training for 33Mhz is -20℃, 25℃, and 70℃, and the parameter training for 40Mhz is -20℃, 25℃, and 70℃. The selection of the set temperature point is determined according to the NAND Flash operating range selected by the NAND Flash supplier.
[0045] S2: According to the training results, the timing parameters of the storage controller and NAND Flash applicable to all set temperature points at each frequency are obtained;
[0046] Furthermore, in one embodiment, according to the training results, the timing parameters of the storage controller and NAND Flash applicable to all set temperature points at each frequency are obtained, specifically including:
[0047] According to the training results, the timing parameters of the storage controller and NAND Flash applicable to all set temperature points at the current frequency are obtained in turn, and the corresponding relationship between each selected frequency and the timing parameter is obtained.
[0048] Specifically, by performing parameter training for multiple set temperature points at different frequencies, the timing parameters of the storage controller and NAND Flash applicable to all set temperature points at different frequencies are finally obtained, for example, the timing parameters of the storage controller and NAND Flash applicable to -20℃, 25℃, and 70℃ at the 33Mhz gear, and the timing parameters of the storage controller and NAND Flash applicable to -20℃, 25℃, and 70℃ at the 40Mhz gear. By obtaining the timing parameters of the storage controller and NAND Flash applicable to all set temperature points at different frequencies, it can be ensured that the NAND Flash switches the frequency parameters within the corresponding temperature range, and the interface read and write signals will not have bit errors.
[0049] The timing parameters in this application include the Drivestrength (drive strength) or ODT (terminal impedance) of the storage controller, the Drivestrength or ODT of the NAND Flash, and the DQ or DQS (bidirectional data control pin) delay parameters under each channel of the storage controller.
[0050] In the present application, after obtaining the timing parameters of the storage controller and NAND Flash applicable to all set temperature points at the current frequency, when the SSD is produced, the corresponding relationship between the frequency and the timing parameters is saved in the NorFlash or NAND Flash key data area of the SSD. That is, when the SSD is produced, the above training results, that is, the corresponding relationship between the frequency and the timing parameters, are saved in the NorFlash or NAND Flash key data area of the SSD.
[0051] S3: monitors the amount of data sent to the NAND Flash per unit time in real time, switches the frequency according to the increase or decrease of the data amount, and loads the timing parameters corresponding to the switched frequency.
[0052] Furthermore, in one embodiment, the amount of data sent to the NAND Flash per unit time is monitored in real time, and the frequency is switched according to the increase or decrease of the data amount, specifically including:
[0053] Monitor the amount of data sent to NAND Flash per unit time in real time, and based on the increase or decrease in the amount of data:
[0054] If the amount of data is decreasing, the NAND Flash is switched to a lower frequency accordingly;
[0055] If the amount of data is increasing, the NAND Flash is switched to a higher frequency accordingly.
[0056] Specifically, the amount of data sent to the NAND Flash per unit time can be detected in real time through the software running on the SSD. The amount of data can be obtained by multiplying the number of commands by the amount of data carried by each command. Once it is found that the amount of data decreases or increases, a low frequency point or a high frequency point is switched accordingly. The specific switching frequency can be defined according to actual use.
[0057] In the present application, loading the timing parameters corresponding to the frequency after switching specifically includes: detecting the current command state of NAND Flash, if the NAND Flash data transmission is completed and in the IDLE state, then loading the timing parameters corresponding to the frequency after switching, and initializing the storage controller and NAND Flash. That is, loading the timing parameters corresponding to the current frequency after switching from the Nor Flash or NAND Flash key data area of the SSD, and initializing the storage controller and NAND Flash.
[0058] The NAND Flash dynamic frequency conversion method of the embodiment of the present application performs parameter training on different frequency points in advance within different temperature ranges, saves the parameter results, divides different frequency gears, and then selects different frequency gears for switching and matching according to the amount of data currently interacting between the SSD and the NAND Flash. In this way, within different temperature ranges, according to the state of the current data amount, the operating frequencies of the SSD master control and the NAND Flash are dynamically switched, thereby reducing the overall power consumption of the SSD while ensuring optimal performance, thereby reducing the heat generation of the SSD and enhancing the stability of the product.
[0059] In a second aspect, an embodiment of the present application further provides a NAND Flash dynamic frequency conversion device.
[0060] In one embodiment, referring to Figure 2 , Figure 2 This is a functional module diagram of the NAND Flash dynamic frequency conversion device of this application. Figure 2 As shown, the NAND Flash dynamic frequency conversion device includes: a training module, a determination module, and a switching module.
[0061] The training module is used to select the frequencies corresponding to different Timing Modes based on the specifications and performance of NAND Flash, and perform parameter training for multiple set temperature points at each selected frequency; the determination module is used to obtain the timing parameters of the storage controller and NAND Flash applicable to all set temperature points at each frequency based on the training results; the switching module is used to monitor the amount of data sent to NAND Flash per unit time in real time, switch the frequency high or low according to the increase or decrease in the amount of data, and load the timing parameters corresponding to the switched frequency.
[0062] In this application, based on the specifications and performance of NAND Flash, the frequencies corresponding to different Timing Modes are selected, and parameter training of multiple set temperature points is performed at each selected frequency, specifically including:
[0063] Based on the specifications and performance of NAND Flash, multiple different Timing Modes are selected, and the corresponding frequency is selected for each Timing Mode;
[0064] The selected frequencies are obtained in sequence, and parameter training of a plurality of set temperature points is performed respectively at the obtained current frequencies.
[0065] In this application, according to the training results, the timing parameters of the storage controller and NAND Flash applicable to all set temperature points at each frequency are obtained, specifically including:
[0066] According to the training results, the timing parameters of the storage controller and NAND Flash applicable to all set temperature points at the current frequency are obtained in turn, and the corresponding relationship between each selected frequency and the timing parameter is obtained.
[0067] In the present application, after obtaining the timing parameters of the storage controller and NAND Flash applicable to all set temperature points at the current frequency, when the SSD is produced, the corresponding relationship between the frequency and the timing parameters is saved in the NorFlash or NAND Flash key data area of the SSD.
[0068] In the present application, the timing parameters include the Drivestrength or ODT of the storage controller, the Drivestrength or ODT of the NAND Flash, and the DQ or DQS delay parameters of each channel of the storage controller.
[0069] In this application, the amount of data sent to the NAND Flash per unit time is monitored in real time, and the frequency is switched according to the increase or decrease of the data amount, specifically including:
[0070] Monitor the amount of data sent to NAND Flash per unit time in real time, and based on the increase or decrease in the amount of data:
[0071] If the amount of data is decreasing, the NAND Flash is switched to a lower frequency accordingly;
[0072] If the amount of data is increasing, the NAND Flash is switched to a higher frequency accordingly.
[0073] In this application, the timing parameters corresponding to the frequency after loading switching specifically include:
[0074] Detect the current NAND Flash command status. If the NAND Flash data transmission is completed and is in the IDLE state, load the timing parameters corresponding to the switched frequency and initialize the storage controller and NAND Flash.
[0075] The NAND Flash dynamic frequency conversion device of the embodiment of the present application performs parameter training on different frequency points in advance within different temperature ranges, saves the parameter results, divides different frequency gears, and then selects different frequency gears for switching and matching according to the amount of data currently interacting between the SSD and the NAND Flash. In this way, within different temperature ranges, according to the state of the current data amount, the operating frequencies of the SSD master control and the NAND Flash are dynamically switched, thereby reducing the overall power consumption of the SSD while ensuring optimal performance, thereby reducing the heat generation of the SSD and enhancing the stability of the product.
[0076] In a third aspect, an embodiment of the present application provides a NAND Flash dynamic frequency conversion device, which may be a device having a data processing function, such as a personal computer (PC), a laptop computer, or a server.
[0077] Reference Figure 3 , Figure 3 The hardware structure diagram of the NAND Flash dynamic frequency conversion device involved in the embodiment of the present application is shown in FIG. In the embodiment of the present application, the NAND Flash dynamic frequency conversion device may include a processor, a memory, a communication interface, and a communication bus.
[0078] The communication bus may be of any type and is used to interconnect the processor, the memory, and the communication interface.
[0079] The communication interface includes input / output (I / O) interface, physical interface and logical interface, etc., which are used to realize the interconnection of devices inside the NAND Flash dynamic frequency conversion device, and the interface used to realize the interconnection between the NAND Flash dynamic frequency conversion device and other devices (such as other computing devices or user devices). The physical interface can be an Ethernet interface, a fiber optic interface, an ATM interface, etc.; the user device can be a display (Display), a keyboard (Keyboard), etc.
[0080] The memory can be various types of storage media, such as random access memory (RAM), read-only memory (ROM), non-volatile RAM (NVRAM), flash memory, optical storage, hard disk, programmable ROM (PROM), erasable PROM (EPROM), electrically erasable PROM (EEPROM), etc.
[0081] The processor may be a general-purpose processor, and the general-purpose processor may call the NAND Flash dynamic frequency conversion program stored in the memory and execute the NAND Flash dynamic frequency conversion method provided in the embodiment of the present application. For example, the general-purpose processor may be a central processing unit (CPU). The method executed when the NAND Flash dynamic frequency conversion program is called may refer to the various embodiments of the NAND Flash dynamic frequency conversion method of the present application, and will not be repeated here.
[0082] Those skilled in the art will understand that Figure 3 The hardware structure shown in the figure does not constitute a limitation on the present application, and may include more or less components than shown in the figure, or combine certain components, or arrange the components differently.
[0083] In a fourth aspect, an embodiment of the present application also provides a computer-readable storage medium.
[0084] The computer-readable storage medium of the present application stores a NAND Flash dynamic frequency conversion program, wherein when the NAND Flash dynamic frequency conversion program is executed by a processor, the steps of the NAND Flash dynamic frequency conversion method as described above are implemented.
[0085] Among them, the method implemented when the NAND Flash dynamic frequency conversion program is executed can refer to the various embodiments of the NAND Flash dynamic frequency conversion method of the present application, and will not be repeated here.
[0086] The terms "including" and "having" and any variations thereof in the specification and claims of this application and the above-mentioned drawings are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not limited to the listed steps or units, but optionally includes steps or units that are not listed, or optionally includes other steps or units inherent to these processes, methods, products or devices. The terms "first", "second" and "third" are used to distinguish different objects, etc., and do not represent a sequence, nor do they limit "first", "second" and "third" to different types.
[0087] In the description of the embodiments of the present application, "exemplary", "for example" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary", "for example" or "for example" in the embodiments of the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary", "for example" or "for example" is intended to present related concepts in a specific way.
[0088] In the description of the embodiments of the present application, unless otherwise specified, “ / ” means or, for example, A / B can mean A or B; the “and / or” in the text is merely a description of the association relationship of associated objects, indicating that three relationships may exist, for example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. In addition, in the description of the embodiments of the present application, “multiple” refers to two or more than two.
[0089] In some processes described in the embodiments of the present application, multiple operations or steps that appear in a specific order are included, but it should be understood that these operations or steps may not be executed in the order in which they appear in the embodiments of the present application or in parallel, and the sequence number of the operation is only used to distinguish the different operations, and the sequence number itself does not represent any execution order. In addition, these processes may include more or fewer operations, and these operations or steps may be executed in sequence or in parallel, and these operations or steps may be combined.
[0090] Through the description of the above implementation methods, those skilled in the art can clearly understand that the above-mentioned embodiment methods can be implemented by means of software plus a necessary general hardware platform, and of course by hardware, but in many cases the former is a better implementation method. Based on such an understanding, the technical solution of the present application is essentially or the part that contributes to the prior art can be embodied in the form of a software product, which is stored in a storage medium (such as ROM / RAM, disk, CD) as described above, and includes a number of instructions for a terminal device to execute the methods described in each embodiment of the present application.
[0091] The above are only preferred embodiments of the present application, and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.
Claims
1. A NAND Flash dynamic frequency conversion method, characterized in that: The NAND Flash dynamic frequency conversion method comprises: Based on the specifications and performance of NAND Flash, select the frequencies corresponding to different Timing Modes, and perform parameter training at multiple set temperature points at each selected frequency; According to the training results, the timing parameters of the storage controller and NAND Flash applicable to all set temperature points at each frequency are obtained; Monitor the amount of data sent to NAND Flash per unit time in real time, switch the frequency according to the increase or decrease of the data volume, and load the timing parameters corresponding to the switched frequency.
2. A NAND Flash dynamic frequency conversion method as claimed in claim 1, characterized in that: Based on the specifications and performance of NAND Flash, the frequencies corresponding to different Timing Modes are selected, and parameter training of multiple set temperature points is performed at each selected frequency, specifically including: Based on the specifications and performance of NAND Flash, multiple different Timing Modes are selected, and the corresponding frequency is selected for each Timing Mode; The selected frequencies are obtained in sequence, and parameter training of a plurality of set temperature points is performed respectively at the obtained current frequencies.
3. A NAND Flash dynamic frequency conversion method as claimed in claim 1, characterized in that: According to the training results, the timing parameters of the storage controller and NAND Flash applicable to all set temperature points at each frequency are obtained, specifically including: According to the training results, the timing parameters of the storage controller and NAND Flash applicable to all set temperature points at the current frequency are obtained in turn, and the corresponding relationship between each selected frequency and the timing parameter is obtained.
4. A NAND Flash dynamic frequency conversion method as claimed in claim 3, characterized in that: After obtaining the timing parameters of the storage controller and NAND Flash applicable to all set temperature points at the current frequency, when the SSD is produced, the corresponding relationship between the frequency and the timing parameters is saved in the Nor Flash or NAND Flash key data area of the SSD.
5. A NAND Flash dynamic frequency conversion method as claimed in claim 1, characterized in that: The timing parameters include the Drivestrength or ODT of the storage controller, the Drivestrength or ODT of the NAND Flash, and the DQ or DQS delay parameters of each channel of the storage controller.
6. A NAND Flash dynamic frequency conversion method as claimed in claim 1, characterized in that: The real-time monitoring of the amount of data sent to the NAND Flash per unit time and switching the frequency according to the increase or decrease of the amount of data specifically includes: Monitor the amount of data sent to NAND Flash per unit time in real time, and based on the increase or decrease in the amount of data: If the amount of data is decreasing, the NAND Flash is switched to a lower frequency accordingly; If the amount of data is increasing, the NAND Flash is switched to a higher frequency accordingly.
7. A NAND Flash dynamic frequency conversion method as claimed in claim 1, characterized in that: The timing parameters corresponding to the frequency after the loading switch specifically include: Detect the current NAND Flash command status. If the NAND Flash data transmission is completed and is in the IDLE state, load the timing parameters corresponding to the switched frequency and initialize the storage controller and NAND Flash.
8. A NAND Flash dynamic frequency conversion device, characterized in that: The NAND Flash dynamic frequency conversion device comprises: The training module is used to select the frequency corresponding to different Timing Modes based on the specifications and performance of the NAND Flash, and perform parameter training at multiple set temperature points at each selected frequency; A determination module, which is used to obtain timing parameters of a storage controller and a NAND Flash applicable to all set temperature points at each frequency according to the training results; The switching module is used to monitor the amount of data sent to the NAND Flash per unit time in real time, switch the frequency according to the increase or decrease of the data volume, and load the timing parameters corresponding to the switched frequency.
9. A NAND Flash dynamic frequency conversion device, characterized in that: The NAND Flash dynamic frequency conversion device includes a processor, a memory, and a NAND Flash dynamic frequency conversion program stored in the memory and executable by the processor, wherein when the NAND Flash dynamic frequency conversion program is executed by the processor, the steps of the NAND Flash dynamic frequency conversion method according to any one of claims 1 to 7 are implemented.
10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a NAND Flash dynamic frequency conversion program, wherein when the NAND Flash dynamic frequency conversion program is executed by a processor, the steps of the NAND Flash dynamic frequency conversion method according to any one of claims 1 to 7 are implemented.