Inductive coupling krypton plasma driving circuit serving as calibration source

Abstract

The invention provides an inductive coupling krypton plasma driving circuit serving as a calibration source, which is used for solving the technical problems that the existing electrodeless driving krypton plasma driving circuit has large current, the energy loss is relatively large, and the driving frequency of the plasma drifts, so that the excitation of the krypton plasma is unstable. According to the inductively coupled krypton plasma driving circuit serving as the calibration source, a full-bridge inverter circuit is built by adopting NMOS (N-channel Metal Oxide Semiconductor) tubes based on silicon carbide, and sequential conduction and cut-off of four power switch tubes are controlled through two first gate drivers which are arranged in an inverted manner, so that amplification of a radio-frequency signal is realized, the circuit switching loss is effectively improved, and the power consumption of the circuit is reduced. The heating value of the MOS tube is reduced; meanwhile, the device has good stability, reliability and accuracy, effective excitation of krypton plasmas is guaranteed, the luminous intensity of the plasmas is improved, and the problem that the service life of a plasma calibration light source is short is solved.

Description

Technical Field

[0001] The invention relates to a krypton plasma driving circuit, in particular to an inductively coupled krypton plasma driving circuit used as a calibration source. Background Art

[0002] The Michelson Interferometer (MIGHTI) can explore the connection between low-atmospheric processes and high-atmospheric conditions, imaging the edge of the Earth to obtain highly resolved neutral wind profiles in the range of 90 to 300 kilometers. The Michelson Interferometer monitors atmospheric winds at all altitudes of interest by simultaneously measuring the green atmospheric oxygen emission line and the red atmospheric oxygen emission line. Among them, the wavelength of the green atmospheric oxygen emission line is 557.73nm, which is usually calibrated using an onboard calibration source or a satellite calibration source as a frequency standard. The specific principle is: the diffuse light from the calibration source reaches the Michelson interferometer to provide a reference fringe pattern, which is compared with the fringes formed by the green atmosphere for calibration.

[0003] Since the krypton plasma light source provides a green line at 557.03nm, the industry usually uses krypton plasma light sources as onboard calibration sources. At present, the most widely used is the electrode discharge krypton plasma light source, but the electrodes in the electrode discharge krypton plasma light source will be eroded by the krypton plasma during the discharge process, gradually wear, resulting in a decrease in discharge performance, which ultimately affects the luminous efficiency and stability of the light source. This wear is inevitable. With the increase in usage time, the loss rate of the electrode will accelerate, which greatly shortens the life of the light source. The electrode discharge krypton plasma light source can no longer meet the needs of onboard calibration sources with longer and longer on-orbit operation time. In order to solve this problem, the solution of using an electrodeless driven krypton plasma light source has been proposed. The electrodeless driven krypton plasma light source excites the krypton plasma through a large radio frequency current, avoids the physical loss of the electrode, and greatly extends the service life of the light source. This light source can not only meet the requirements of long-term on-orbit operation, but also has high luminous efficiency and stability. It is a very promising alternative. However, it is not easy to realize the application of electrodeless driven krypton plasma light sources, which requires solving a series of technical problems, especially in circuit design. First, the excitation process of krypton plasma involves complex electromagnetic field distribution and energy transfer, which requires precise control to ensure the stable generation and maintenance of plasma. Secondly, the electrodeless driven krypton plasma light source also requires a reliable switching control circuit. Since the light source needs to be frequently switched on and off according to specific mission requirements when the satellite is in orbit, the circuit design must be able to withstand multiple switching operations without affecting the stability and life of the light source. However, the existing electrodeless driven krypton plasma driving circuit has a relatively large energy loss due to the presence of large current, and the driving frequency of the plasma will drift, resulting in unstable krypton plasma excitation. Summary of the invention

[0004] The purpose of the present invention is to solve the technical problems that the existing electrodeless krypton plasma driving circuit has large energy loss due to the existence of large current, and the driving frequency of the plasma will drift, resulting in unstable krypton plasma excitation, and to provide an inductively coupled krypton plasma driving circuit as a calibration source.

[0005] In order to achieve the above purpose, the technical solution of the present invention is as follows:

[0006] An inductively coupled krypton plasma driving circuit as a calibration source is special in that it includes a radio frequency signal generating module, a radio frequency amplifying module and a high voltage generating module; the radio frequency signal generating module is used to generate a radio frequency signal;

[0007] The radio frequency amplification module includes a full-bridge inverter circuit and a drive module;

[0008] The full-bridge inverter circuit includes an upper half bridge and a lower half bridge; the upper half bridge includes a power switch tube Q1 and a power switch tube Q2, and the lower half bridge includes a power switch tube Q3 and a power switch tube Q4;

[0009] The power switch tube Q1, the power switch tube Q2, the power switch tube Q3, and the power switch tube Q4 are all NMOS tubes based on silicon carbide; the drain of the power switch tube Q1 is connected to the drain of the power switch tube Q2, the source of the power switch tube Q3 is connected to the source of the power switch tube Q4, the source of the power switch tube Q1 is connected to the drain of the power switch tube Q3 as the output A terminal, and the source of the power switch tube Q2 is connected to the drain of the power switch tube Q4 as the output B terminal;

[0010] The input end of the high voltage generating module is connected to the output end of the radio frequency signal generating module, and the output end thereof is connected to the drain of the power switch tube Q1 and the drain of the power switch tube Q2, so as to increase the voltage of the radio frequency signal to supply power to the full-bridge inverter circuit;

[0011] The driving module includes two first gate drivers and a first shaping circuit; the IN+ end of one first gate driver is connected to the output end of the radio frequency signal generating module, and is used to directly input the radio frequency signal into the corresponding first gate driver for conversion and enhancement; the IN+ end of the other first gate driver is connected to the output end of the radio frequency signal generating module through the first shaping circuit, and is used to invert the radio frequency signal and input it into the corresponding first gate driver for conversion and enhancement; the IN- ends of the two first gate drivers are connected to each other and grounded;

[0012] The gate of the power switch tube Q2 and the gate of the power switch tube Q3 are respectively connected to the two output ends of a first gate driver, and the gate of the power switch tube Q1 and the gate of the power switch tube Q4 are respectively connected to the two output ends of another first gate driver, so as to control the sequential conduction and cutoff of the four power switch tubes according to the enhanced signals output by the two first gate drivers, so as to amplify the radio frequency signal and excite krypton plasma.

[0013] Furthermore, the first gate driver is an enhancement mode GaN field effect transistor gate driver.

[0014] Furthermore, it also includes a first DC voltage stabilizing circuit;

[0015] The driving module further includes a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5 and a resistor R6;

[0016] The output end of the first DC voltage stabilizing circuit is respectively connected to the VDD ends of the two first gate drivers, so as to provide the operating voltage to the two first gate drivers;

[0017] One end of the resistor R1 is connected to the output end of the first DC voltage stabilizing circuit, and the other end is connected to one end of the resistor R2, and the other end of the resistor R2 is grounded; the VREF ends of the two first gate drivers are connected between the resistor R1 and the resistor R2;

[0018] One end of the resistor R3 and the resistor R4 are respectively connected to the OUTH end and the OUTL end of a first gate driver, and the other ends are connected to the gate of the power switch tube Q2 and the gate of the power switch tube Q3;

[0019] One end of the resistor R5 and the resistor R6 are respectively connected to the OUTH end and the OUTL end of another first gate driver, and the other ends are connected to the gate of the power switch tube Q1 and the gate of the power switch tube Q4.

[0020] Furthermore, the radio frequency signal generating module includes a radio frequency oscillator and a second DC voltage stabilizing circuit;

[0021] The radio frequency oscillator comprises an oscillation circuit and a current amplification circuit;

[0022] The oscillation circuit comprises a comparator COMP, a crystal oscillator Y and a feedback network; the crystal oscillator Y is used to generate an oscillation signal, one end of which is connected to the positive input end of the comparator COMP, and the other end is connected to the first output end of the comparator COMP; at the same time, the first output end of the comparator COMP is connected to the negative input end of the comparator COMP through the feedback network, so as to form a feedback amplifier to stably amplify the oscillation signal output by the crystal oscillator Y;

[0023] The feedback network includes a resistor R7 and a capacitor C4;

[0024] One end of the resistor R7 is connected to the first output end of the comparator COMP, and the other end is connected to one end of the capacitor C4, and the other end of the capacitor C4 is grounded; the negative input end of the comparator COMP is connected between the resistor R7 and the capacitor C4;

[0025] The input end of the current amplifier circuit is connected to the second output end of the comparator COMP, and is used to amplify the current of the oscillation signal output by the comparator COMP to form a radio frequency signal, and the output end thereof is respectively connected to the IN+ ends of the two first gate drivers;

[0026] The second DC voltage stabilizing circuit is used to provide operating voltage to the comparator COMP and the crystal oscillator Y respectively.

[0027] Further, the full-bridge inverter circuit also includes a diode D1, a diode D2, a diode D3, a diode D4, a capacitor C1 and a capacitor C2;

[0028] The diode D1 is connected in reverse parallel to both ends of the power switch tube Q1, the diode D2 is connected in reverse parallel to both ends of the power switch tube Q2, the diode D3 is connected in reverse parallel to both ends of the power switch tube Q3, and the diode D4 is connected in reverse parallel to both ends of the power switch tube Q4;

[0029] One end of the capacitor C1 is connected to the connection point of the power switch tube Q1 and the power switch tube Q3, and the other end is connected to the output B end of the full-bridge inverter circuit;

[0030] One end of the capacitor C2 is connected to the cathode of the diode D2, and the other end is connected to the anode of the diode D4.

[0031] Further, the high voltage generating module is a synchronous rectification BOOST high voltage circuit, including a second gate driver, a resistor R7, a resistor R8, a resistor R9, a resistor R10, a power switch tube Q5, an inductor L1, a capacitor C3 and a diode D5;

[0032] One end of the resistor R7 is connected to the output end of the first DC voltage stabilizing circuit, and the other end thereof is connected to one end of the resistor R8, and the other end of the resistor R8 is grounded;

[0033] The IN+ terminal of the second gate driver is connected to the output terminal of the current amplifier circuit, the VDD terminal thereof is connected to the output terminal of the first DC voltage stabilizing circuit, and the VREF terminal thereof is connected between the resistor R7 and the resistor R8;

[0034] One end of the resistor R9 and the resistor R10 are respectively connected to the OUTH end and the OUTL end of the second gate driver, and the other ends are connected to the gate of the power switch tube Q5;

[0035] The drain of the power switch tube Q5 is connected to the positive electrode of the diode D5, and is connected to the output end of the first DC voltage stabilizing circuit through the inductor L1. The source of the power switch tube Q5 is grounded, and the cathode of the diode D5 is connected to the output end of the high voltage generating module; one end of the capacitor C3 is connected to the cathode of the diode D5, and the other end is grounded.

[0036] Further, the current amplification circuit includes a capacitor C5, a transistor V and a bias circuit;

[0037] One end of the capacitor C5 is connected to the second output end of the comparator COMP, and the other end is connected to the base of the transistor V;

[0038] The bias circuit includes a resistor R11, a capacitor C6, a resistor R12, a resistor R13 and a resistor R14;

[0039] One end of the resistor R11 is connected to the emitter of the transistor V, and the other end is grounded. The capacitor C6 is connected in parallel to both ends of the resistor R11. One end of the resistor R12 is grounded, and the other end is connected to the base of the transistor V.

[0040] One end of the resistor R13 and the resistor R14 are both connected to the output end of the first DC voltage stabilizing circuit, the other end of the resistor R13 is connected to the base of the transistor V, and the other end of the resistor R14 is connected to the collector of the transistor V;

[0041] The collector of the transistor V is connected to the IN+ terminal of the two first gate drivers and the IN+ terminal of the second gate driver respectively.

[0042] Further, the comparator COMP is a high-speed comparator LT1016;

[0043] The first shaping circuit is an integrated circuit 74HC04;

[0044] The three-stage tube V is 2N2222;

[0045] The power switch tube Q1, the power switch tube Q2, the power switch tube Q3, and the power switch tube Q4 are all GC3M0065090D;

[0046] The diode D1, diode D2, diode D3 and diode D4 are all SS56;

[0047] The first gate driver and the second gate driver are UCC27611.

[0048] Furthermore, the second DC voltage stabilization circuit uses a linear voltage stabilizer AMS1117 to provide a 5V operating voltage to the comparator COMP and the crystal oscillator Y;

[0049] The first DC voltage stabilization circuit uses a SY8401 switching regulator to provide a 12V operating voltage to the first gate driver, the second gate driver, the current amplifier circuit and the linear regulator AMS1117.

[0050] Furthermore, it also includes a peak voltage monitoring module, a rectifier high voltage signal monitoring module, a temperature monitoring module and a power monitoring module;

[0051] The peak voltage monitoring module includes a diode D6, a capacitor C7, a resistor R15 and an RC filter module;

[0052] The positive electrode of the diode D6 is connected to the output A terminal or the output B terminal of the full-bridge inverter circuit, and the negative electrode is connected to one end of the resistor R15, and the other end of the resistor R15 serves as the output end of the peak voltage monitoring module;

[0053] One end of the capacitor C7 is connected between the diode D6 and the resistor R15, and the other end is grounded;

[0054] The RC filter module includes a resistor R16 and a capacitor C8;

[0055] One end of the resistor R16 is connected to the other end of the resistor R15, and one end of the capacitor C8 is connected to one end of the resistor R16; the other end of the resistor R16 and the other end of the capacitor C8 are connected and then grounded;

[0056] The rectifier high-voltage signal monitoring module includes a resistor R17, a resistor R18 and a capacitor C9; one end of the resistor R17 is connected to the output end of the high-voltage generating module, one end of the resistor R18 is grounded, the other end of the resistor R17 is connected to the other end of the resistor R18, and the connection end serves as the output end after voltage division; the capacitor C9 is connected in parallel to both ends of the resistor R18;

[0057] The temperature monitoring module realizes temperature monitoring of each power switch tube through a K-type thermocouple;

[0058] The power monitoring module uses a current detection amplifier to achieve power monitoring.

[0059] Compared with the prior art, the present invention has the following beneficial effects:

[0060] 1. The inductively coupled krypton plasma driving circuit provided by the present invention as a calibration source adopts a full-bridge inverter circuit based on a silicon carbide NMOS tube, and then controls the sequential conduction and cutoff of four power switch tubes through two first gate drivers with an inverse setting, so as to realize the amplification of the radio frequency signal, effectively improve the circuit switching loss, and reduce the heat generation of the MOS tube; at the same time, the inductively coupled krypton plasma driving circuit of the present invention effectively avoids the drift of the plasma driving frequency, has good stability, reliability and accuracy, ensures the effective excitation of the krypton plasma, improves the luminous intensity of the plasma, and solves the problem of the short life of the plasma calibration light source.

[0061] 2. The present invention uses an enhancement mode GaN field effect transistor gate driver to drive a silicon carbide-based NMOS tube, which reduces the system transmission delay, ensures the rapid rise and fall of the pulse, and optimizes the ringing phenomenon. BRIEF DESCRIPTION OF THE DRAWINGS

[0062] Figure 1 It is a structural block diagram of an embodiment of an inductively coupled krypton plasma driving circuit used as a calibration source of the present invention;

[0063] Figure 2 is a circuit topology diagram of a radio frequency signal generating module in an embodiment of the present invention;

[0064] Figure 3 is a circuit topology diagram of a radio frequency amplification module in an embodiment of the present invention;

[0065] Figure 4 is a circuit topology diagram of a high voltage generating module in an embodiment of the present invention;

[0066] Figure 5 is a circuit topology diagram of a peak voltage monitoring module in an embodiment of the present invention;

[0067] Figure 6 1 is a circuit topology diagram of a rectifier high voltage signal monitoring module in an embodiment of the present invention;

[0068] Figure 7 is a circuit topology diagram of a temperature monitoring module in an embodiment of the present invention;

[0069] Figure 8 FIG. 4 is a circuit topology diagram of a power monitoring module in an embodiment of the present invention. DETAILED DESCRIPTION

[0070] In order to make the advantages and features of the present invention more clear, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0071] like Figure 1As shown, an inductively coupled krypton plasma driving circuit as a calibration source includes a radio frequency signal generating module, a radio frequency amplifying module, a high voltage generating module, a first DC voltage stabilizing circuit, a peak voltage monitoring module, a rectified high voltage signal monitoring module, a temperature monitoring module and a power monitoring module.

[0072] The radio frequency signal generating module is used to generate radio frequency signals. Figure 2 As shown, the RF signal generation module includes a RF oscillator and a second DC voltage regulator circuit. The RF oscillator includes an oscillation circuit and a current amplifier circuit; the oscillation circuit includes a comparator COMP, a crystal oscillator Y and a feedback network. In this embodiment, the comparator COMP uses a high-speed comparator LT1016.

[0073] The second DC voltage stabilization circuit includes a voltage stabilization power supply, two voltage-dividing resistors R0 and a capacitor C0. One end of a voltage-dividing resistor R0 is connected to the voltage stabilization power supply, and the other end is connected to another voltage-dividing resistor R0. The other end of the other voltage-dividing resistor R0 is grounded. The positive input end of the comparator COMP is connected between the two voltage-dividing resistors R0 to supply power to the comparator COMP. The capacitor C0 is connected between the positive input end of the comparator COMP and the ground to filter. The voltage stabilization power supply uses a linear voltage regulator AMS1117 to provide a 5V operating voltage to the comparator COMP and the crystal oscillator Y.

[0074] Crystal oscillator Y is used to generate an oscillation signal, one end of which is connected to the positive input end of comparator COMP, and the other end is connected to the first output end of comparator COMP. The first output end of comparator COMP is connected to the negative input end of comparator COMP through a feedback network, and is used to form a feedback amplifier to stably amplify the oscillation signal output by crystal oscillator Y. In this embodiment, the feedback network includes a resistor R7 and a capacitor C4, one end of the resistor R7 is connected to the first output end of comparator COMP, and the other end is connected to one end of capacitor C4, the other end of capacitor C4 is grounded, and the negative input end of comparator COMP is connected between resistor R7 and capacitor C4.

[0075] The current amplifier circuit is used to amplify the current of the oscillation signal output by the comparator COMP to form a radio frequency signal, and includes a capacitor C5, a transistor V and a bias circuit, wherein the bias circuit includes a resistor R11, a capacitor C6, a resistor R12, a resistor R13 and a resistor R14. The specific connection relationship is: one end of the capacitor C5 is connected to the second output end of the comparator COMP, and the other end is connected to the base of the transistor V; one end of the resistor R11 is connected to the emitter of the transistor V, and the other end is grounded; the capacitor C6 is connected in parallel to both ends of the resistor R11, one end of the resistor R12 is grounded, and the other end is connected to the base of the transistor V; one end of the resistor R13 and the resistor R14 are both connected to the output end of the first DC voltage stabilization circuit, the other end of the resistor R13 is connected to the base of the transistor V, and the other end of the resistor R14 is connected to the collector of the transistor V. The LT1016 comparator and the crystal oscillator Y in the present invention form an oscillation circuit to generate a square wave signal with a frequency of 10 MHz, providing a stable radio frequency source for the circuit, and then the square wave signal is amplified to 12 V by a current amplifier circuit composed of a 2N2222 triode V.

[0076] like Figure 3 As shown, the RF amplification module is used to amplify the RF signal, and includes a full-bridge inverter circuit and a drive module. The full-bridge inverter circuit includes an upper half bridge, a lower half bridge, a capacitor C1 and a capacitor C2; the upper half bridge includes a power switch tube Q1, a power switch tube Q2, a diode D1 and a diode D2, and the lower half bridge includes a power switch tube Q3, a power switch tube Q4, a diode D3 and a diode D4. In the present invention, the power switch tube Q1, the power switch tube Q2, the power switch tube Q3, and the power switch tube Q4 are all NMOS tubes based on silicon carbide, and the model in this embodiment is GC3M0065090D, which can effectively improve the circuit switching loss and reduce the heat generated by the MOS tube.

[0077] The drain of the power switch tube Q1 is connected to the drain of the power switch tube Q2, the source of the power switch tube Q3 is connected to the source of the power switch tube Q4, the source of the power switch tube Q1 is connected to the drain of the power switch tube Q3 as the output A terminal, the source of the power switch tube Q2 is connected to the drain of the power switch tube Q4 and then connected to one end of the capacitor C1, the other end of the capacitor C1 is used as the output B terminal, and the output A terminal and the output B terminal are used to connect the inductively coupled krypton plasma. The diode D1 is reversely connected in parallel at both ends of the power switch tube Q1, the diode D2 is reversely connected in parallel at both ends of the power switch tube Q2, the diode D3 is reversely connected in parallel at both ends of the power switch tube Q3, and the diode D4 is reversely connected in parallel at both ends of the power switch tube Q4, which is used to pass the parallel diodes to continue the current when the switch tube is turned off, so as to prevent the diode from being impacted by the reverse voltage. One end of the capacitor C2 is connected to the negative electrode of the diode D2, and the other end is connected to the positive electrode of the diode D4, which is used to stabilize the output of the RF amplifier module. In this embodiment, the diode D1 , the diode D2 , the diode D3 and the diode D4 are all made of SS56.

[0078] The driving module includes two first gate drivers, a first shaping circuit, a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5 and a resistor R6. Preferably, in this embodiment, the first gate driver is an enhancement mode GaN field effect transistor gate driver. The output ends of the first DC voltage regulator circuit are respectively connected to the VDD ends of the two first gate drivers to provide working voltages to the two first gate drivers. In this embodiment, the output voltage of the first DC voltage regulator circuit is 12V, and the first gate driver adopts UCC27611.

[0079] The IN+ terminal of one first gate driver is connected to the collector of the transistor V, the IN+ terminal of the other first gate driver is connected to the collector of the transistor V through the first shaping circuit, the IN- terminals of the two first gate drivers are connected to each other and grounded, one end of the resistor R1 is connected to the first DC voltage stabilizing circuit, and the other end is connected to one end of the resistor R2, the other end of the resistor R2 is grounded, and the VREF terminals of the two first gate drivers are connected between the resistor R1 and the resistor R2, and are used to input the radio frequency signal into the two first gate drivers respectively, convert it into a corresponding gate drive signal and perform signal enhancement. Among them, the first shaping circuit is used to invert the radio frequency signal, and the first shaping circuit in this embodiment adopts the integrated circuit 74HC04.

[0080] One end of the resistor R3 and the resistor R4 are respectively connected to the OUTH end and the OUTL end of a first gate driver, and the other ends are connected to the gate of the power switch tube Q2 and the gate of the power switch tube Q3; one end of the resistor R5 and the resistor R6 are respectively connected to the OUTH end and the OUTL end of another first gate driver, and the other ends are connected to the gate of the power switch tube Q1 and the gate of the power switch tube Q4, that is, one first gate driver is used to control the conduction and cutoff of the power switch tube Q2 and the power switch tube Q3, and the other first gate driver is used to control the conduction and cutoff of the power switch tube Q1 and the power switch tube Q4, so that the four power switch tubes are turned on and off in a certain order, so as to realize the amplification of the radio frequency signal and excite the krypton plasma.

[0081] The high voltage generation module is a synchronous rectification BOOST high voltage circuit, which is used to increase the voltage of the RF signal to supply power to the full-bridge inverter circuit to obtain a higher coil current. Figure 4 As shown, the high voltage generating module of this embodiment includes a second gate driver, a resistor R7, a resistor R8, a resistor R9, a resistor R10, a power switch tube Q5, an inductor L1, a capacitor C3 and a diode D5. The specific connection relationship is: one end of the resistor R7 is connected to the output end of the first DC voltage stabilizing circuit, the other end of the resistor R7 is connected to one end of the resistor R8, and the other end of the resistor R8 is grounded; the IN+ end of the second gate driver is connected to the collector of the transistor V, the IN- end is grounded, the VDD end is connected to the output end of the first DC voltage stabilizing circuit, and the VREF end is connected between the resistor R7 and the resistor R8. One end of the resistor R9 and the resistor R10 are respectively connected to the OUTH end and the OUTL end of the second gate driver, and the other end is connected to the gate of the power switch tube Q5; the drain of the power switch tube Q5 is connected to the positive electrode of the diode D5, and is connected to the output end of the first DC voltage stabilizing circuit through the inductor L1, the source of the power switch tube Q5 is grounded, and the negative electrode of the diode D5 is connected to the output end of the high voltage generating module; one end of the capacitor C3 is connected to the negative electrode of the diode D5, and the other end is grounded.

[0082] At the same time, the cathode of diode D5 is connected to the output end of the high voltage generating module for outputting the voltage V high The output end of the high voltage generation module is connected to the drain of the power switch tube Q1 and the drain of the power switch tube Q2, and is used to supply power to the full-bridge inverter circuit. Among them, the second gate driver adopts UCC27611, the power switch tube Q5 adopts GC3M0065090D, and the diode D5 adopts SS56. The first DC voltage stabilization circuit adopts SY8401 switching regulator to provide 12V working voltage to the first gate driver, the second gate drive device, the current amplifier circuit and the linear regulator AMS1117.

[0083] The peak voltage monitoring module, the rectifier high voltage signal monitoring module, the temperature monitoring module and the power monitoring module in the present invention are all constructed using existing circuit topologies. Figure 5 As shown, the peak voltage monitoring module is used to monitor the peak value of the output voltage of the full-bridge inverter circuit, which includes a diode D6, a capacitor C7, a resistor R15 and an RC filter module. The positive electrode of the diode D6 is connected to the output A terminal or the output B terminal of the full-bridge inverter circuit, and the negative electrode thereof is connected to one end of the resistor R15. The other end of the resistor R15 serves as the output end of the peak voltage monitoring module. One end of the capacitor C7 is connected between the diode D6 and the resistor R15, and the other end is grounded, which is used to realize the monitoring of the peak voltage of the RF signal. The RC filter module is used to filter the output RF signal, and includes a resistor R16 and a capacitor C8. One end of the resistor R16 is connected to the other end of the resistor R15, and one end of the capacitor C8 is connected to one end of the resistor R16; the other end of the resistor R16 and the other end of the capacitor C8 are connected and then grounded. As shown Figure 6 As shown, the rectifier high-voltage signal monitoring module is used to monitor the output voltage of the high-voltage generating module, which includes a resistor R17, a resistor R18 and a capacitor C9. One end of the resistor R17 is connected to the output end of the high-voltage generating module, one end of the resistor R18 is grounded, and the other end of the resistor R17 is connected to the other end of the resistor R18, and the connection end is used as the output end after voltage division; the capacitor C9 is connected in parallel to both ends of the resistor R18 for filtering. The temperature monitoring module is used to monitor the temperature of each power switch tube in the RF amplification module, such as Figure 7 As shown, the temperature of each power switch tube is monitored by a K-type thermocouple. In this embodiment, the weak thermoelectric electromotive force of the K-type thermocouple is amplified 500 times. Figure 8 As shown, the power monitoring module uses the current detection amplifier INA18012 to amplify the voltage across the current sampling resistor by 50 times, and then measures and calculates the output current of the high voltage generation module to achieve power monitoring.

[0084] The above description is only used to illustrate the technical solution of the present invention rather than to limit it. For ordinary professional and technical personnel in the field, the specific technical solution recorded in the above embodiment can be modified, or some of the technical features therein can be replaced by equivalents, and these modifications or replacements do not make the essence of the corresponding technical solution deviate from the scope of the technical solution protected by the present invention.

Claims

1. An inductively coupled krypton plasma drive circuit as a calibration source, characterized in that: It includes a radio frequency signal generating module, a radio frequency amplifying module and a high voltage generating module; The radio frequency signal generating module is used to generate a radio frequency signal; The radio frequency amplification module includes a full-bridge inverter circuit and a drive module; The full-bridge inverter circuit includes an upper half bridge and a lower half bridge; the upper half bridge includes a power switch tube Q1 and a power switch tube Q2, and the lower half bridge includes a power switch tube Q3 and a power switch tube Q4; The power switch tube Q1, the power switch tube Q2, the power switch tube Q3, and the power switch tube Q4 are all NMOS tubes based on silicon carbide; the drain of the power switch tube Q1 is connected to the drain of the power switch tube Q2, the source of the power switch tube Q3 is connected to the source of the power switch tube Q4, the source of the power switch tube Q1 is connected to the drain of the power switch tube Q3 as the output A terminal, and the source of the power switch tube Q2 is connected to the drain of the power switch tube Q4 as the output B terminal; The input end of the high voltage generating module is connected to the output end of the radio frequency signal generating module, and the output end thereof is connected to the drain of the power switch tube Q1 and the drain of the power switch tube Q2, so as to increase the voltage of the radio frequency signal to supply power to the full-bridge inverter circuit; The driving module includes two first gate drivers and a first shaping circuit; the IN+ end of one first gate driver is connected to the output end of the radio frequency signal generating module, and is used to directly input the radio frequency signal into the corresponding first gate driver for conversion and enhancement; the IN+ end of the other first gate driver is connected to the output end of the radio frequency signal generating module through the first shaping circuit, and is used to invert the radio frequency signal and input it into the corresponding first gate driver for conversion and enhancement; IN- terminals of the two first gate drivers are connected to each other and grounded; The gate of the power switch tube Q2 and the gate of the power switch tube Q3 are respectively connected to the two output ends of a first gate driver, and the gate of the power switch tube Q1 and the gate of the power switch tube Q4 are respectively connected to the two output ends of another first gate driver, so as to control the sequential conduction and cutoff of the four power switch tubes according to the enhanced signals output by the two first gate drivers, so as to amplify the radio frequency signal and excite krypton plasma.

2. The inductively coupled krypton plasma driving circuit as a calibration source according to claim 1, characterized in that: The first gate driver is an enhancement mode GaN field effect transistor gate driver.

3. The inductively coupled krypton plasma driving circuit as a calibration source according to claim 2, characterized in that: Also includes a first DC voltage stabilizing circuit; The driving module further includes a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5 and a resistor R6; The output end of the first DC voltage stabilizing circuit is respectively connected to the VDD ends of the two first gate drivers, so as to provide the operating voltage to the two first gate drivers; One end of the resistor R1 is connected to the output end of the first DC voltage stabilizing circuit, and the other end is connected to one end of the resistor R2, and the other end of the resistor R2 is grounded; the VREF ends of the two first gate drivers are connected between the resistor R1 and the resistor R2; One end of the resistor R3 and the resistor R4 are respectively connected to the OUTH end and the OUTL end of a first gate driver, and the other ends are connected to the gate of the power switch tube Q2 and the gate of the power switch tube Q3; One end of the resistor R5 and the resistor R6 are respectively connected to the OUTH end and the OUTL end of another first gate driver, and the other ends are connected to the gate of the power switch tube Q1 and the gate of the power switch tube Q4.

4. The inductively coupled krypton plasma driving circuit as a calibration source according to claim 3, characterized in that: The radio frequency signal generating module includes a radio frequency oscillator and a second DC voltage stabilizing circuit; The radio frequency oscillator comprises an oscillation circuit and a current amplification circuit; The oscillation circuit comprises a comparator COMP, a crystal oscillator Y and a feedback network; one end of the crystal oscillator Y is connected to the positive input end of the comparator COMP, and the other end is connected to the first output end of the comparator COMP; the first output end of the comparator COMP is connected to the negative input end of the comparator COMP through the feedback network, so as to form a feedback amplifier to stably amplify the oscillation signal output by the crystal oscillator Y; The feedback network includes a resistor R7 and a capacitor C4; One end of the resistor R7 is connected to the first output end of the comparator COMP, and the other end is connected to one end of the capacitor C4, and the other end of the capacitor C4 is grounded; the negative input end of the comparator COMP is connected between the resistor R7 and the capacitor C4; The input end of the current amplifier circuit is connected to the second output end of the comparator COMP, and is used to amplify the current of the oscillation signal output by the comparator COMP to form a radio frequency signal, and the output end thereof is respectively connected to the IN+ ends of the two first gate drivers; The second DC voltage stabilizing circuit is used to provide operating voltage to the comparator COMP and the crystal oscillator Y respectively.

5. The inductively coupled krypton plasma driving circuit as a calibration source according to claim 4, characterized in that: The full-bridge inverter circuit also includes a diode D1, a diode D2, a diode D3, a diode D4, a capacitor C1 and a capacitor C2; The diode D1 is connected in reverse parallel to both ends of the power switch tube Q1, the diode D2 is connected in reverse parallel to both ends of the power switch tube Q2, the diode D3 is connected in reverse parallel to both ends of the power switch tube Q3, and the diode D4 is connected in reverse parallel to both ends of the power switch tube Q4; One end of the capacitor C1 is connected to the connection point of the power switch tube Q1 and the power switch tube Q3, and the other end is connected to the output B end of the full-bridge inverter circuit; One end of the capacitor C2 is connected to the cathode of the diode D2, and the other end is connected to the anode of the diode D4.

6. The inductively coupled krypton plasma driving circuit as a calibration source according to claim 5, characterized in that: The high voltage generation module is a synchronous rectification BOOST high voltage circuit, including a second gate driver, a resistor R7, a resistor R8, a resistor R9, a resistor R10, a power switch tube Q5, an inductor L1, a capacitor C3 and a diode D5; One end of the resistor R7 is connected to the output end of the first DC voltage stabilizing circuit, and the other end thereof is connected to one end of the resistor R8, and the other end of the resistor R8 is grounded; The IN+ terminal of the second gate driver is connected to the output terminal of the current amplifier circuit, the VDD terminal thereof is connected to the output terminal of the first DC voltage stabilizing circuit, and the VREF terminal thereof is connected between the resistor R7 and the resistor R8; One end of the resistor R9 and the resistor R10 are respectively connected to the OUTH end and the OUTL end of the second gate driver, and the other ends are connected to the gate of the power switch tube Q5; The drain of the power switch tube Q5 is connected to the positive electrode of the diode D5, and is connected to the output end of the first DC voltage stabilizing circuit through the inductor L1. The source of the power switch tube Q5 is grounded, and the cathode of the diode D5 is connected to the output end of the high voltage generating module; one end of the capacitor C3 is connected to the cathode of the diode D5, and the other end is grounded.

7. The inductively coupled krypton plasma driving circuit as a calibration source according to claim 6, characterized in that: The current amplifying circuit includes a capacitor C5, a transistor V and a bias circuit; One end of the capacitor C5 is connected to the second output end of the comparator COMP, and the other end is connected to the base of the transistor V; The bias circuit includes a resistor R11, a capacitor C6, a resistor R12, a resistor R13 and a resistor R14; One end of the resistor R11 is connected to the emitter of the transistor V, and the other end is grounded. The capacitor C6 is connected in parallel to both ends of the resistor R11. One end of the resistor R12 is grounded, and the other end is connected to the base of the transistor V. One end of the resistor R13 and the resistor R14 are both connected to the output end of the first DC voltage stabilizing circuit, the other end of the resistor R13 is connected to the base of the transistor V, and the other end of the resistor R14 is connected to the collector of the transistor V; The collector of the transistor V is respectively connected to the IN+ terminal of the two first gate drivers and the IN+ terminal of the second gate driver.

8. The inductively coupled krypton plasma driving circuit as a calibration source according to claim 7, characterized in that: The comparator COMP is a high-speed comparator LT1016; The first shaping circuit is an integrated circuit 74HC04; The three-stage tube V is 2N2222; The power switch tube Q1, the power switch tube Q2, the power switch tube Q3, and the power switch tube Q4 are all GC3M0065090D; The diode D1, diode D2, diode D3 and diode D4 are all SS56; The first gate driver and the second gate driver are UCC27611.

9. The inductively coupled krypton plasma driving circuit as a calibration source according to claim 8, characterized in that: The second DC voltage stabilization circuit uses a linear voltage stabilizer AMS1117 to provide a 5V operating voltage to the comparator COMP and the crystal oscillator Y; The first DC voltage stabilization circuit uses a SY8401 switching regulator to provide a 12V operating voltage to the first gate driver, the second gate driver, the current amplifier circuit and the linear regulator AMS1117.

10. An inductively coupled krypton plasma driving circuit as a calibration source according to any one of claims 1 to 9, characterized in that: It also includes a peak voltage monitoring module, a rectifier high voltage signal monitoring module, a temperature monitoring module and a power monitoring module; The peak voltage monitoring module includes a diode D6, a capacitor C7, a resistor R15 and an RC filter module; The positive electrode of the diode D6 is connected to the output A terminal or the output B terminal of the full-bridge inverter circuit, and the negative electrode is connected to one end of the resistor R15, and the other end of the resistor R15 serves as the output end of the peak voltage monitoring module; One end of the capacitor C7 is connected between the diode D6 and the resistor R15, and the other end is grounded; The RC filter module includes a resistor R16 and a capacitor C8; One end of the resistor R16 is connected to the other end of the resistor R15, and one end of the capacitor C8 is connected to one end of the resistor R16; the other end of the resistor R16 and the other end of the capacitor C8 are connected and then grounded; The rectifier high-voltage signal monitoring module includes a resistor R17, a resistor R18 and a capacitor C9; one end of the resistor R17 is connected to the output end of the high-voltage generating module, one end of the resistor R18 is grounded, the other end of the resistor R17 is connected to the other end of the resistor R18, and the connection end serves as the output end after voltage division; the capacitor C9 is connected in parallel to both ends of the resistor R18; The temperature monitoring module realizes temperature monitoring of each power switch tube through a K-type thermocouple; The power monitoring module uses a current detection amplifier to achieve power monitoring.

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