Alternating electric field generating electrode for tumor treatment, preparation method of alternating electric field generating electrode, electrode patch and tumor electric field treatment system

Abstract

The invention discloses an alternating electric field generating electrode for tumor treatment, a preparation method of the alternating electric field generating electrode, an electrode patch and a tumor electric field treatment system. The alternating electric field generating electrode for tumor treatment comprises a first electrode layer and a dielectric layer which are stacked, wherein, the material of the dielectric layer comprises P (VDF-TS) containing CF3C6H4. According to the invention, P (VDF-TS) containing CF3C6H4 is used as a dielectric layer material, the P (VDF-TS) dielectric layer containing CF3C6H4 has a high dielectric constant and low dielectric loss, the energy utilization rate is effectively improved, and the electric field intensity is improved under the condition that the thickness and the area of the dielectric layer are fixed, so that the tumor treatment alternating electric field is better applied to the treatment part of a patient.

Description

Technical Field

[0001] The present application relates to the field of medical devices, and in particular to an alternating electric field generating electrode for tumor treatment and a preparation method thereof, an electrode patch and a tumor electric field treatment system. Background Art

[0002] Tumor-Treating Fields (TTF), also known as Tumor-Treating Fields (TTF), is a new cancer treatment model with the advantages of being non-invasive and portable. The tumor-treating field therapy applies an alternating electric field to the treatment site of the human body, thereby affecting the aggregation of tumor tubulin and preventing spindle formation, thereby achieving the purpose of inhibiting the mitotic process of cancer cells and inducing apoptosis of cancer cells. Existing tumor-treating field therapy mainly attaches electrode patches to the opposite sides of the patient's treatment site, such as the two sides of the patient's waist. The alternating electric field generating electrodes in the electrode patches block the current from flowing directly to the patient. At the same time, the electrode plates of the alternating electric field generating electrodes on the opposite sides apply alternating electric fields to the patient's treatment site, thereby achieving the purpose of tumor treatment.

[0003] The alternating electric field generating electrode generally includes a stacked electrode layer and a dielectric layer. When in use, the dielectric layer is generally located on the side close to the human body to block the current. Summary of the invention

[0004] In view of this, the present application provides an alternating electric field generating electrode and a preparation method thereof, an electrode patch and a tumor electric field treatment system, aiming to provide a dielectric layer with high dielectric properties.

[0005] The embodiment of the present application is implemented as follows:

[0006] In a first aspect, the present application provides an alternating electric field generating electrode, comprising a first electrode layer and a dielectric layer stacked;

[0007] Wherein, the material of the dielectric layer includes P(VDF-TS) containing CF3C6H4.

[0008] Optionally, in some embodiments of the present application, the thickness of the dielectric layer is 1 to 100 μm.

[0009] Optionally, in some embodiments of the present application, the thickness of the dielectric layer is 1 to 10 μm; preferably, the thickness of the dielectric layer is 2 to 8 μm.

[0010] Optionally, in some embodiments of the present application, the breakdown field strength of the dielectric layer is greater than or equal to 50 V / μm; preferably, the breakdown field strength of the dielectric layer is 70-110 V / μm.

[0011] Optionally, in some embodiments of the present application, the dielectric constant of the dielectric layer at 1 kHz and a temperature of 25° C. is greater than or equal to 20.

[0012] Optionally, in some embodiments of the present application, the material of the dielectric layer further includes one or more of PVDF, P(VDF-TrFE-CTFE), P(VDF-TrFE-CFE), P(VDF-TrFE-CFE-CTFE), and P(VDF-DB) containing CH=CF; and / or,

[0013] The material of the dielectric layer further includes inorganic dielectric material particles, and the material of the inorganic dielectric material particles includes one or more of ceramics, glass, and mica.

[0014] Optionally, in some embodiments of the present application, the alternating electric field generating electrode also includes an insulating layer, the insulating layer includes a first insulating layer and / or a second insulating layer, the first insulating layer is arranged on the side of the dielectric layer away from the first electrode layer, and the second insulating layer is arranged between the dielectric layer and the first electrode layer.

[0015] Optionally, in some embodiments of the present application, the breakdown field strength of the first insulating layer is greater than the breakdown field strength of the dielectric layer; and / or,

[0016] The breakdown field strength of the second insulating layer is greater than the breakdown field strength of the dielectric layer; and / or,

[0017] The thickness of the insulating layer is 1 to 1000 nm; and / or,

[0018] The ratio of the thickness of the dielectric layer to the thickness of the insulating layer is greater than or equal to 20 and less than or equal to 2000.

[0019] Optionally, in some embodiments of the present application, the materials of the first insulating layer and the second insulating layer are independently selected from inorganic insulating materials or organic insulating materials, the inorganic insulating material includes at least one of silicon dioxide, silicon nitride, zirconium oxide, boron nitride, aluminum nitride, chromium carbide and aluminum oxide, and the organic insulating material includes at least one of siloxane polymer, silazane polymer, polymethyl methacrylate, polyimide, polyethylene, polyethylene terephthalate, polyphenylene sulfide, polyurethane, fluorinated ethylene propylene copolymer, fusible polytetrafluoroethylene, ethylene-tetrafluoroethylene copolymer, polyetheretherketone, polysilazane, polycarbonate, silicone resin, fluoride material and rubber.

[0020] Optionally, in some embodiments of the present application, a second electrode layer is further included, and the second electrode layer is arranged on a side of the dielectric layer away from the first electrode layer.

[0021] Optionally, in some embodiments of the present application, the second electrode layer includes a first conductive layer, a first flexible conductive layer, and a second conductive layer that are stacked.

[0022] Optionally, in some embodiments of the present application, the material of the first conductive layer includes one or a combination of Al, Ti, Au, Ag, Zn, Cu, Pt, Cr, Fe, Sn or Ni; and / or,

[0023] The first flexible conductive layer includes conductive paper or conductive elastomer, and the conductive elastomer includes conductive rubber or conductive silicone; and / or,

[0024] The material of the second conductive layer includes copper, silver, titanium or stainless steel.

[0025] In a second aspect, the present application also proposes a method for preparing an alternating electric field generating electrode for tumor treatment, comprising the following steps:

[0026] providing a first electrode layer;

[0027] forming a dielectric layer on one side of the first electrode layer to obtain an alternating electric field generating electrode for tumor treatment;

[0028] Wherein, the dielectric layer includes P(VDF-TS) containing CF3C6H4.

[0029] Optionally, in some embodiments of the present application, the step of forming a dielectric layer includes:

[0030] forming a dielectric polymer initial film, wherein the material of the dielectric polymer initial film includes P(VDF-TS) containing CF3C6H4;

[0031] The dielectric polymer initial film is subjected to a heat pressing process to form a dielectric layer.

[0032] Optionally, in some embodiments of the present application, the conditions for the heat pressing treatment are:

[0033] The temperature is greater than or equal to 40°C and less than 90°C; preferably, the temperature is 40-50°C; and / or,

[0034] The pressure is greater than or equal to 1 MPa and less than 10 MPa; preferably, the pressure is 3-5 MPa.

[0035] In a third aspect, the present application further proposes an electrode patch, comprising the alternating electric field generating electrode as described above, or comprising the alternating electric field generating electrode prepared by the preparation method described above.

[0036] In a fourth aspect, the present application also proposes a tumor treatment system, comprising the electrode patch described above.

[0037] The alternating electric field generating electrode provided in the present application adopts P (VDF-TS) containing CF3C6H4 as the dielectric layer material. The P (VDF-TS) dielectric layer containing CF3C6H4 has a higher dielectric constant and lower dielectric loss, which effectively improves the energy utilization rate, and helps to improve the electric field strength of the alternating electric field generating electrode when the thickness and area of ​​the dielectric layer are certain, so as to better apply the alternating electric field for tumor treatment to the patient's treatment site; at the same time, the P (VDF-TS) containing CF3C6H4 has good flexibility, which can give the dielectric layer better flexibility and elasticity, so that it can better fit the human skin, which helps to improve the comfort of the skin surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0039] Figure 1 It is a structural schematic diagram of an alternating electric field generating electrode proposed in the first embodiment of the present application;

[0040] Figure 2 is a structural schematic diagram of an alternating electric field generating electrode proposed in the second embodiment of the present application;

[0041] Figure 3 is a schematic structural diagram of an alternating electric field generating electrode proposed in the third embodiment of the present application;

[0042] Figure 4 is a schematic structural diagram of an alternating electric field generating electrode proposed in the fourth embodiment of the present application;

[0043] Figure 5 is a structural schematic diagram of an alternating electric field generating electrode proposed in the fifth embodiment of the present application;

[0044] Figure 6 is a SEM image of the finished film prepared before hot pressing in Scheme 2-1;

[0045] Figure 7 is a SEM image of the dielectric layer prepared after hot pressing in Scheme 2-2;

[0046] Label:

[0047] 100 - alternating electric field generating electrode; 10 - first electrode layer; 20 - dielectric layer; 30 - insulating layer; 41 - first conductive layer; 42 - first flexible conductive layer; 43 - second conductive layer; 50 - conductive attachment layer. DETAILED DESCRIPTION

[0048] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0049] In this application, unless otherwise specified, the directional words used, such as "upper" and "lower", refer specifically to the directions of the drawings in the accompanying drawings. In addition, in the description of the specification of this application, the term "including" means "including but not limited to".

[0050] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0051] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0052] In the present application, "at least one" means one or more, and "plurality" means two or more. "At least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0053] The technical solution of this application is implemented as follows:

[0054] In a first aspect, the present invention provides an alternating electric field generating electrode 100, which can be used in electric field therapy for tumors. Figure 1 The alternating electric field generating electrode 100 includes a first electrode layer 10 and a dielectric layer 20 which are stacked; wherein the material of the dielectric layer 20 includes P(VDF-TS) containing CF3C6H4.

[0055] For ease of description, herein, the alternating electric field generating electrode 100 of this embodiment is used as the reference, and the side close to the skin is defined as the inner side, and the side away from the skin is defined as the outer side. In some embodiments, the dielectric layer 20 is disposed on the inner side of the first electrode layer 10 .

[0056] The P(VDF-TS) containing CF3C6H4 is a derivative of polyvinylidene fluoride (PVDF). Specifically, P(VDF-TS) is a polymer formed by copolymerizing PVDF with trifluoromethylstyrene, and has better chemical resistance and weather resistance. In some embodiments, the structural formula of P(VDF-TS) containing CF3C6H4 is as follows:

[0057]

[0058] Herein, m is any integer from 1 to 50, and n is any integer from 1 to 60.

[0059] In some embodiments, the P(VDF-TS) can be prepared by the following steps: mixing vinylidene fluoride monomer (PVDF) and trifluoromethylstyrene monomer (TFS) under anhydrous conditions; heating the mixture to 150-200°C, adding a catalyst, reacting for 1-2h (hours), cooling the reactants and collecting the polymer to obtain P(VDF-TS) containing CF3C6H4.

[0060] P(VDF-TS) is a high-performance resin with excellent dielectric properties. The dielectric properties of PVDF-TS depend largely on its molecular structure. The chain segments of PVDF-TS contain fluorine atoms, which have strong polarity, which makes PVDF-TS have a higher dielectric constant. In addition, the chain segments of PVDF-TS contain benzene rings, which have a larger conjugated structure, which makes PVDF-TS have lower dielectric loss. In addition, the material also has better flexibility.

[0061] The alternating electric field generating electrode 100 provided in the present application adopts P (VDF-TS) containing CF3C6H4 as the material of the dielectric layer 20. The P (VDF-TS) containing CF3C6H4 has good flexibility, which can give the dielectric layer 20 good flexibility and elasticity, so that it can better fit the human skin, which helps to improve the comfort of the skin surface; at the same time, the P (VDF-TS) dielectric layer 20 containing CF3C6H4 has a higher dielectric constant and lower dielectric loss, which effectively improves the energy utilization rate, and when the thickness and area of ​​the dielectric layer 20 are certain, it helps to improve the electric field strength of the alternating electric field generating electrode 100, so as to better apply the tumor treatment alternating electric field to the patient's treatment site.

[0062] Specifically, in some embodiments, the material of the dielectric layer 20 may also include other dielectric materials, that is, the material of the dielectric layer 20 may be a mixture of P(VDF-TS) containing CF3C6H4 and other dielectric materials; the other dielectric materials may include, but are not limited to, one or more of PVDF, P(VDF-TrFE-CTFE), P(VDF-TrFE-CFE), P(VDF-TrFE-CFE-CTFE), and P(VDF-DB) containing CH=CF. Among them, P(VDF-DB) containing CH=CF refers to a polymer containing an unsaturated double bond CH=CF, which has a high dielectric constant and good flexibility.

[0063] In some other embodiments, other inorganic dielectric material particles may be added into the dielectric layer 20 . The materials of the inorganic dielectric material particles include but are not limited to ceramics, glass, mica, etc.

[0064] The dielectric layer 20 has good insulation properties and can effectively prevent the current connected to the first electrode layer 10 of the alternating electric field generating electrode 100 from directly acting on the human body. In some embodiments, the breakdown field strength of the dielectric layer 20 is greater than or equal to 50V / μm, for example, it can be 50-80V / μm. Further, in other embodiments, the dielectric layer 20 is a dielectric layer 20 treated by a hot pressing process. After the hot pressing process, the internal defects of the dielectric layer 20 are greatly reduced, which effectively improves its breakdown field strength. The breakdown field strength of the dielectric layer 20 of this embodiment can be greater than or equal to 70V / μm, for example, it can be 70-110V / μm. The dielectric layer 20 after hot pressing has better insulation strength, and under the condition of having the same insulation strength and dielectric constant, its film thickness is relatively smaller, which helps to further improve the electric field strength of the alternating electric field generating electrode 100, ensure the strength of the electric field required for tumor treatment, and at the same time, ensure the effectiveness, safety and good service life of the electrode during use.

[0065] In some embodiments, the dielectric constant of the dielectric layer 20 at 200 Khz and room temperature is greater than or equal to 20. In a specific embodiment, the dielectric constant of the dielectric layer 20 at 1 kHz and 25° C. is 75.

[0066] In some embodiments of the present application, the thickness of the dielectric layer 20 is 1 um to 100 um.

[0067] Further, in some embodiments of the present application, the thickness of the dielectric layer 20 is 1um to 10um; for example, it can be 1-10μm, 1-4μm, 2-5μm, 3-6μm, 5-10μm, 5-9μm, 4-8μm, 6-7μm, etc. Preferably, the thickness of the dielectric layer 20 is 2um to 8um. When the thickness of the dielectric layer 20 meets the above-mentioned size requirements, the alternating electric field generating electrode 100 can have a higher electric field strength, and at the same time, the breakdown phenomenon of the alternating electric field generating electrode 100 caused by the thin dielectric layer 20 can be avoided.

[0068] The first electrode layer 10 is made of a conductive material and has conductivity. The first electrode layer 10 is used to connect to a power source so as to pass an AC voltage signal through the first electrode layer 10. In some embodiments of the present application, the first electrode layer 10 may be a thin and flexible metal layer, such as a metal copper foil, so that the first electrode layer 10 has better flexibility and is easy to bend, thereby making the alternating electric field generating electrode 100 bend as a whole and better fit the skin surface of the human body.

[0069] In some embodiments of the present application, the thickness of the first electrode layer 10 is 0.005 mm-1 mm. Preferably, the thickness of the first electrode layer 10 is 0.01-0.1 mm. More preferably, the thickness of the first electrode layer 10 is 0.01-0.05 mm. The thickness of the first electrode layer 10 satisfies the above range, which can ensure the flexibility of the first electrode layer 10 on the one hand, and prevent the first electrode layer 10 from being too thin and easy to crack on the other hand.

[0070] It is understandable that the first electrode layer 10 may also be made of other metal materials or non-metallic conductive materials, such as metal silver foil or conductive graphite.

[0071] In some embodiments of the present application, the first electrode layer 10 may refer to a metal layer on a circuit board, for example, a portion of a copper foil area is exposed on the circuit board, and a dielectric layer 20 is formed in the copper foil area, and the power interface of the circuit board can conveniently connect the two poles of the power supply. Preferably, the circuit board may be a flexible circuit board, such as a flexible printed circuit board made of polyimide or polyester film as a substrate, so as to simplify the electrical connection structure of the alternating electric field generating electrode 100 while making the alternating electric field generating electrode 100 flexible and bendable.

[0072] See also Figure 2 and Figure 3 The alternating electric field generating electrode 100 further includes an insulating layer 30, the insulating layer 30 includes a first insulating layer and / or a second insulating layer, the first insulating layer is arranged on the side of the dielectric layer 20 away from the first electrode layer 10, and the second insulating layer is arranged between the dielectric layer 20 and the first electrode layer 10. Specifically, in some embodiments, Figure 2 As shown, the alternating electric field generating electrode 100 includes a first electrode layer 10, a dielectric layer 20 and a first insulating layer stacked from outside to inside; in other embodiments, as Figure 3 As shown, the alternating electric field generating electrode 100 includes a first electrode layer 10, a second insulating layer and a dielectric layer 20 stacked from the outside to the inside; in some other embodiments, the alternating electric field generating electrode 100 includes a first electrode layer 10, a second insulating layer, a dielectric layer 20 and a first insulating layer stacked from the outside to the inside. In this embodiment, an insulating material can be provided on the inside or outside of the dielectric layer 20, so that the dielectric layer 20 can be effectively prevented from being broken down and damaged while reducing the thickness of the dielectric layer 20; in addition, the first insulating layer / the second insulating layer is closely combined with the dielectric layer 20, which can effectively improve the surface defects of the dielectric layer 20 and help improve the stability of the alternating electric field generating electrode 100.

[0073] In some embodiments, the breakdown field strength of the first insulating layer is greater than the breakdown field strength of the dielectric layer 20; in other embodiments, the breakdown field strength of the second insulating layer is greater than the breakdown field strength of the dielectric layer 20. The insulating layer 30 of this embodiment has higher insulation than the dielectric layer 20, which can improve the anti-breakdown performance of the alternating electric field generating electrode 100, which is conducive to ensuring the safety of the alternating electric field generating electrode 100 in the tumor treatment electrode patch.

[0074] In some embodiments, the material of the first insulating layer includes an inorganic insulating material or an organic insulating material, the inorganic insulating material includes at least one of silicon dioxide, silicon nitride, zirconium oxide, boron nitride, aluminum nitride, chromium carbide and aluminum oxide, and the organic insulating material includes at least one of siloxane polymer, silazane polymer, polymethyl methacrylate (PMMA), polyimide (PI), polyethylene (PE), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyurethane (PU), fluorinated ethylene propylene copolymer (FEP), fusible polytetrafluoroethylene (PFA), ethylene-tetrafluoroethylene copolymer (ETFE), polyetheretherketone (PEEK), polysilazane, polycarbonate, silicone resin, fluoride material and rubber.

[0075] In some embodiments, the material of the second insulating layer includes an inorganic insulating material or an organic insulating material, the inorganic insulating material includes at least one of silicon dioxide, silicon nitride, zirconium oxide, boron nitride, aluminum nitride, chromium carbide and aluminum oxide, and the organic insulating material includes at least one of siloxane polymer, silazane polymer, polymethyl methacrylate (PMMA), polyimide (PI), polyethylene (PE), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyurethane (PU), fluorinated ethylene propylene copolymer (FEP), fusible polytetrafluoroethylene (PFA), ethylene-tetrafluoroethylene copolymer (ETFE), polyetheretherketone (PEEK), polysilazane, polycarbonate, silicone resin, fluoride material and rubber.

[0076] The materials of the first insulating layer and the second insulating layer may be the same or different.

[0077] In some embodiments of the present application, the thickness of the insulating layer 30 is 1nm to 1000nm. Preferably, the thickness of the insulating layer 30 is 5nm to 800nm. More preferably, the thickness of the insulating layer 30 is 10nm to 300nm. It can be understood that when the insulating layer 30 includes a first insulating layer and a second insulating layer, the thickness of the insulating layer 30 refers to the sum of the thicknesses of the first insulating layer and the second insulating layer. When the thickness of the insulating layer 30 satisfies the above-mentioned dimensional relationship, on the one hand, it can avoid the insulating layer 30 being too thick in some cases (for example, the insulating layer 30 is not flexible or has poor flexibility) and causing its brittleness to increase, thereby causing the phenomenon of cracking when the alternating electric field generating electrode 100 is bent, and on the other hand, it can also avoid the phenomenon that the electric field strength of the alternating electric field generating electrode 100 is greatly reduced due to the insulating layer 30 being too thick.

[0078] In some embodiments of the present application, the thickness of the dielectric layer 20 and the thickness of the insulating layer 30 satisfy the following relationship:

[0079] 20≤D1:D2≤2000

[0080] Wherein, D1 is the thickness of the dielectric layer 20 , and D2 is the thickness of the insulating layer 30 .

[0081] It should be noted that the insulating layer 30 is provided to improve the insulation of the alternating electric field generating electrode 100 to ensure that the alternating electric field generating electrode 100 is not broken down in subsequent use. However, adding an insulating layer 30 is actually equivalent to connecting a capacitor in series. According to the capacitance calculation formula 1 / C=1 / C1+1 / C2+…+1 / Cn after the capacitors are connected in series and the dielectric constant calculation formula ε=[(D1+D2)×ε1×ε2] / (D1×ε1+D2×ε2), it can be seen that the insulating layer 30 has a certain thickness, which will cause the capacitance value to become smaller to a certain extent. Therefore, it is necessary to strike a balance between the insulation strength and the capacitance value of the alternating electric field generating electrode 100. In order to reduce this influence on the capacitance value as much as possible, it is necessary to make the capacitance corresponding to the series insulating layer 30 large enough. On the basis of ensuring the purpose of use, in addition to making the thickness of the insulating layer 30 as small as possible, an insulating layer 30 with a higher dielectric constant is also required. Therefore, the material of the insulating layer 30 is also selected from non-conductive oxides, nitrides, carbides and insulating high molecular polymers; in addition, in the setting of the thickness of the relevant layers, the thickness of the insulating layer 30 accounts for a smaller proportion, while the thickness of the dielectric layer 20 accounts for a larger proportion, so that the electric field strength of the alternating electric field generating electrode 100 mainly depends on the thickness of the dielectric layer 20, reducing the influence of the thickness of the insulating layer 30 on the electric field strength of the alternating electric field generating electrode 100, ensuring the electric field strength of the alternating electric field generating electrode 100, so that the alternating electric field applied by the alternating electric field generating electrode 100 can be better coupled to the treatment part of the human body.

[0082] See also Figure 4 and Figure 5 In some embodiments, the alternating electric field generating electrode 100 further includes a second electrode layer, which is disposed on the side of the dielectric layer 20 away from the first electrode layer 10, i.e., the inner side of the dielectric layer 20. The first electrode layer 10 and the second electrode layer constitute the two poles of the alternating electric field generating electrode 100 connected to the AC power supply, so as to facilitate the input of an AC voltage signal to the alternating electric field generating electrode 100 through the first electrode layer 10 and the second electrode layer. The first electrode layer 10 can be directly connected to the AC power supply, while the second electrode layer can be coupled to the AC power supply through the human body and the alternating electric field generating electrode 100 at a relative position attached to the other side of the human body.

[0083] The second electrode layer includes a first conductive layer 41 , a first flexible conductive layer 42 , and a second conductive layer 43 which are sequentially stacked in a direction away from the dielectric layer 20 (ie, from the outside to the inside).

[0084] In some embodiments, the alternating electric field generating electrode 100 includes an insulating layer 30 and a second electrode layer. The insulating layer 30 can be disposed on a side of the second electrode layer facing the dielectric layer 20. Figure 4It can also be arranged between the first conductive layer 41 and the first flexible conductive layer 42, that is, the first conductive layer 41, the insulating layer 30, the first flexible conductive layer 42 and the second conductive layer 43 are stacked in sequence, such as Figure 5 shown.

[0085] In some embodiments of the present application, the material of the first conductive layer 41 may be one or a combination of Al, Ti, Au, Ag, Zn, Cu, Pt, Cr, Fe, Sn or Ni. For example, the first conductive layer 41 includes a magnetron sputtered Al material layer, a Zn material layer and an Ag material layer in sequence. For another example, the first conductive layer 41 includes a magnetron sputtered Al material layer or an Au material layer. In some embodiments of the present application, the first conductive layer 41 may also be formed by spin coating or spray coating of non-metallic conductive materials such as graphite and conductive silicon.

[0086] It should be noted that when the first conductive layer 41 is a metal layer, the first conductive layer 41 may undergo an oxidation reaction with oxygen in the air, thereby causing failure of the first conductive layer 41. In the above embodiment, since the first conductive layer 41 includes multiple sub-metal layers, the sub-metal layer away from the dielectric layer 20 can protect the sub-metal layer close to the dielectric layer 20, thereby avoiding the phenomenon of oxidation failure of the sub-metal layer close to the dielectric layer 20.

[0087] As an exemplary embodiment, the first conductive layer 41 includes overlapping silver metal layers and titanium metal layers, and the silver metal layer is located on the outside of the titanium metal layer. Since the silver metal layer has good ductility and conductivity, the phenomenon of cracks in the silver metal layer when the alternating electric field generating electrode 100 is bent can be avoided as much as possible; at the same time, the titanium metal layer has good calendering properties and stable chemical properties, which can avoid cracks in the titanium metal layer and protect the silver metal layer from oxidation failure.

[0088] In some embodiments of the present application, the thickness of the first conductive layer 41 is 1 nm to 1000 nm. Preferably, the thickness of the first conductive layer 41 is 10 nm to 800 nm. More preferably, the thickness of the first conductive layer 41 is 50 nm to 300 nm. The first conductive layer 41 having the above-mentioned size range can have good flexibility, and can also prevent the first conductive layer 41 from being too thick and prone to cracking due to bending, or from being too thin and unable to completely cover the dielectric layer 20.

[0089] It can be understood that the above-mentioned crack phenomenon of the first conductive layer 41 due to bending refers to only considering the change in the thickness of the first conductive layer 41. In fact, the crack phenomenon of the first conductive layer 41 is also related to the preparation process (such as sputtering, pressing or casting, etc.) or the structure of the metal layer itself.

[0090] The second conductive layer 43 is a thin and flexible metal layer, such as a metal copper foil with a thickness of 0.1 mm to 1 mm, so that the second conductive layer 43 has good flexibility and is easy to bend, thereby making the alternating electric field generating electrode 100 bend as a whole and completely close to the skin surface of the human body. It can be understood that the second conductive layer 43 can also be made of other metal materials, such as metal silver foil.

[0091] In some embodiments of the present application, the second conductive layer 43 is preferably a stainless steel metal layer or a titanium metal layer. When the tumor treatment electrode patch is attached to the surface of human skin, the sweat exuded from the human skin or the water vapor generated by the hydrogel may penetrate into the alternating electric field generating electrode 100. The second conductive layer 43 is preferably set to a stainless steel metal layer or a titanium metal layer. On the one hand, it can prevent the second conductive layer 43 from being corroded. On the other hand, it can also prevent the water vapor generated by the sweat or hydrogel from penetrating into the dielectric layer 20 inside the alternating electric field generating electrode 100, thereby avoiding the alternating electric field generating electrode 100 from being damaged by the dielectric layer 20 due to moisture.

[0092] In some embodiments of the present application, the thickness of the second conductive layer 43 is 0.005 mm-1 mm. Preferably, the thickness of the second conductive layer 43 is 0.01-0.1 mm. More preferably, the thickness of the second conductive layer 43 is 0.01-0.05 mm. The thickness of the second conductive layer 43 satisfies the above range, which can ensure the flexibility of the second conductive layer 43 on the one hand, and prevent the second conductive layer 43 from being too thin and easy to crack on the other hand.

[0093] The first flexible conductive layer 42 has conductivity and a small elastic modulus, so that the first flexible conductive layer 42 electrically connects the second conductive layer 43 with the first conductive layer 41, ensuring the electrical connectivity between the second conductive layer 43 and the first conductive layer 41. Meanwhile, the small elastic modulus of the first flexible conductive layer 42 can avoid the phenomenon of tiny gaps between the second conductive layer 43 and the first conductive layer 41, and prevent the phenomenon of tip discharge between the second conductive layer 43 and the first conductive layer 41.

[0094] In some embodiments of the present application, the thickness of the first flexible conductive layer 42 is 0.001 mm to 1 mm. Preferably, the thickness of the first flexible conductive layer 42 is 0.01 mm to 0.8 mm. More preferably, the thickness of the first flexible conductive layer 42 is 0.1 mm to 0.6 mm. Specifically, the thickness of the first flexible conductive layer 42 meets the above dimensions, which can avoid the phenomenon that the first flexible conductive layer 42 is too thick and causes its flexibility to decrease, and can also prevent the phenomenon that the first flexible conductive layer 42 is too thin and causes it to crack.

[0095] Preferably, the first flexible conductive layer 42 may include conductive paper, so that the first flexible conductive layer 42 has higher tensile and tear strength, and avoids the first flexible conductive layer 42 from being torn due to the bending of the electrode 100 and the human body surface when the alternating electric field is generated. In some embodiments of the present application, the first flexible conductive layer 42 may also include a conductive elastomer, such as conductive rubber or conductive silicone.

[0096] It can be understood that the first flexible conductive layer 42 can also be formed by stacking at least two of conductive paper, conductive rubber and conductive silicone. For example, conductive paper and conductive rubber are stacked to form the first flexible conductive layer 42. The conductive paper ensures the tensile strength of the first flexible conductive layer 42, while the conductive rubber ensures the elasticity of the first flexible conductive layer 42.

[0097] In the embodiment of the present application, the present application sets the second electrode layer as a multi-layer conductive layer structure, and when a crack occurs in a certain conductive layer, the phenomenon of such cracks being transmitted to each other can be avoided, thereby avoiding the occurrence of penetrating cracks in the second electrode layer as much as possible. At the same time, the first flexible conductive layer 42 is filled between the first conductive layer 41 and the second conductive layer 43. Since the thickness of the first flexible conductive layer 42 can change with the spacing between the corresponding parts of the first conductive layer 41 and the second conductive layer 43, the electrical connectivity between the first conductive layer 41 and the second conductive layer 43 can be guaranteed, and the tip discharge phenomenon caused by the interlayer gap between the first conductive layer 41 and the second conductive layer 43 can be avoided.

[0098] It should be noted that the thickness of the first flexible conductive layer 42 may refer to the minimum thickness, maximum thickness or average thickness of the first flexible conductive layer 42, and the spacing at the corresponding positions of the first conductive layer 41 and the second conductive layer 43 may refer to the minimum spacing, maximum spacing or average spacing between the first conductive layer 41 and the second conductive layer 43. When the alternating electric field generating electrode 100 bends, at least one of the minimum spacing, maximum spacing or average spacing between the first conductive layer 41 and the second conductive layer 43 will change, and the thickness (minimum thickness, maximum thickness or average thickness) of the first flexible conductive layer 42 will change accordingly, so that the two sides of the first flexible conductive layer 42 are respectively in close contact with the first conductive layer 41 and the second conductive layer 43, thereby ensuring the electrical connectivity between the first conductive layer 41 and the second conductive layer 43.

[0099] In some embodiments of the present application, the tensile index of the second conductive layer 43 is greater than the tensile index of the first flexible conductive layer 42, and the tensile index of the first flexible conductive layer 42 is greater than the tensile index of the first conductive layer 41. That is, the tensile indexes of the second conductive layer 43, the first flexible conductive layer 42, and the first conductive layer 41 decrease in sequence, so that the tensile index of the second conductive layer 43 far from the dielectric layer 20 is the largest, and the tensile index of the first conductive layer 41 close to the dielectric layer 20 is the smallest. When the alternating electric field generating electrode 100 is bent, the second conductive layer 43 can protect the first conductive layer 41 and the first flexible conductive layer 42 from cracking, and the first flexible conductive layer 42 can protect the first conductive layer 41 from cracking, so that the first conductive layer 41 has double protection and is prevented from cracking as much as possible.

[0100] It should be noted that the tensile index refers to the tensile strength of the sample (the first conductive layer 41, the second conductive layer 43 or the first flexible conductive layer 42), which shows the maximum tensile strength that the sample can withstand before breaking. In some embodiments of the present application, the tensile index of the first flexible conductive layer 42 can be the maximum tensile strength that it can withstand before breaking. In some embodiments of the present application, the tensile index of the first conductive layer 41 can be the maximum tensile strength that it can withstand before breaking, and the tensile index of the second conductive layer 43 can be the maximum tensile strength that it can withstand before breaking.

[0101] It should be noted that, when the alternating electric field generating electrode 100 includes both the insulating layer 30 and the second electrode layer, the second electrode layer is located inside the insulating layer 30 .

[0102] In addition, in some embodiments, the alternating electric field generating electrode 100 further includes a conductive attachment layer 50, and the conductive attachment layer 50 is selected from materials with good adhesion and biocompatibility. For example, the conductive attachment layer 50 can be selected from at least one of conductive coupling materials such as conductive silicone, conductive hydrogel, and carbon-based materials. The conductive attachment layer 50 is flexible and sticky, so that the alternating electric field generating electrode 100 can be adhered to the surface of human skin through the conductive attachment layer 50, and the contact damage caused by the mismatch between the alternating electric field generating electrode 100 and the skin can be minimized. It can be understood that when the alternating electric field generating electrode 100 also includes a second electrode layer, the conductive attachment layer 50 is arranged on the inner side of the second electrode layer.

[0103] In a second aspect, the present application further proposes a method for preparing an alternating electric field generating electrode 100, the preparation method comprising the following steps:

[0104] S100, providing a first electrode layer 10;

[0105] S200, forming a dielectric layer 20 on one side of the first electrode layer 10 to obtain an alternating electric field generating electrode 100;

[0106] The dielectric layer 20 includes P(VDF-TS) containing CF3C6H4.

[0107] In some embodiments of the present application, the dielectric layer 20 can be formed on a substrate using a material including P(VDF-TS) containing CF3C6H4 as a raw material by spin coating, scraping, atomization, casting or screen printing. The substrate can be the first electrode layer 10 or other metal substrates; it can be understood that after the dielectric layer 20 is formed on other metal substrates, the finished film of the dielectric layer 20 can be removed and attached to the first electrode layer 10 indirectly or directly.

[0108] In some embodiments of the present application, in step S200, the step of forming the dielectric layer 20 is further optimized. Specifically, the step of forming the dielectric layer 20 includes:

[0109] S10, forming a dielectric polymer initial film, wherein the material of the dielectric polymer initial film includes P(VDF-TS) containing CF3C6H4;

[0110] S20 , performing a heat pressing process on the dielectric polymer initial film to form a dielectric layer 20 , thereby obtaining an alternating electric field generating electrode 100 .

[0111] The dielectric polymer initial film can be formed on the first electrode layer 10 or other metal substrates by spin coating, scraping, atomization, casting or screen printing, etc., with a material including P(VDF-TS) containing CF3C6H4 as a raw material, and then subjected to a hot pressing process to form a finished film of the dielectric layer 20. It can be understood that when the initial film is formed on other metal substrates, it can be transferred to the first electrode layer 10 after being formed into a finished film by a hot pressing process, or it can be first transferred to the first electrode layer 10 and then subjected to a hot pressing process.

[0112] It should be noted that there are usually some defects on the surface and inside of the dielectric film that has not been treated by the hot pressing process. The surface defects refer to the uneven surface, microscopic pits or microscopic protrusions on the surface after the film is formed; the internal defects refer to the pores inside the film.

[0113] The embodiment of the present application performs a heat pressing treatment on the initial dielectric polymer film, thereby compressing its thickness to increase the electric field strength of the alternating electric field generating electrode 100, reducing defects inside the film and improving the insulation performance of the film, so that the dielectric layer 20 achieves a balance between high dielectric properties, high insulation and flexibility, thereby improving the quality of the alternating electric field generating electrode 100.

[0114] In some embodiments, during the hot pressing, the temperature of the initial film is greater than or equal to 40°C and less than 90°C, for example, it can be 40°C, 42°C, 43°C, 45°C, 46°C, 48°C, 49°C, 50°C, 60°C, 70°C, 80°C, 85°C, 89°C, 89.5°C and values ​​between any two of the above values. Within this range, the film can be compressed without damaging the film. Preferably, in some embodiments, the temperature is 40-50°C; for example, it can be 40°C, 42°C, 43°C, 45°C, 46°C, 48°C, 49°C, 50°C and values ​​between any two of the above values. Within this range, not only the insulation of the film can be effectively improved, but also the good structural properties of the film can be further ensured.

[0115] In some embodiments, during the hot pressing, the hot pressing pressure is greater than or equal to 1MPa and less than 10MPa; for example, it can be 3MPa, 3.5MPa, 4MPa, 4.5MPa, 5MPa, 6MPa, 7MPa, 8MPa, 9MPa, 9.5MPa, 9.9MPa and values ​​between any two of the above values. Within this range, the film can be compressed without damaging the film; further, the pressure can be 3~9MPa. Within this range, not only can its thickness be compressed to increase the electric field strength of the alternating electric field generating electrode 100, but also the insulation of the film can be improved; further, the pressure is 3~5MPa; for example, it can be 3MPa, 3.5MPa, 4MPa, 4.5MPa, 5MPa. Within this range, the insulation of the film can be greatly improved.

[0116] In some embodiments, during the heat pressing, the heat pressing treatment time is greater than or equal to 30 minutes; for example, it can be 0.5 to 1 hour, 0.5 to 1.5 hours, 1 to 3 hours, 0.5 to 2 hours, or 1 to 2 hours, etc.

[0117] In some embodiments, the alternating electric field generating electrode 100 further includes an insulating layer 30 (a first insulating layer and / or a second insulating layer). The insulating layer 30 can be formed on the dielectric layer 20 by magnetron sputtering. During the magnetron sputtering process, the target material (e.g., silicon dioxide) is sputtered by ion bombardment to produce target atoms or molecules with small diameters that can be deposited and enter the tiny pits on the surface of the dielectric layer 20, so that the insulating layer 30 is tightly combined with the dielectric layer 20. In some embodiments of the present application, the insulating layer 30 can also be formed on the dielectric layer 20 by electron beam evaporation. During the electron beam evaporation process, accelerated electrons are used to bombard the coating material (e.g., silicon dioxide), and the kinetic energy of the electrons is converted into heat energy to heat and evaporate the coating material, and finally the insulating layer 30 is formed on the surface of the dielectric layer 20. In addition, the insulating layer 30 can also be deposited on the surface of the dielectric layer 20 by other physical vapor deposition methods such as arc plasma plating, ion plating, and molecular beam epitaxy to modify its surface defects.

[0118] In some embodiments of the present application, the insulating layer 30 can also be formed on the dielectric layer 20 by spin coating of an organic solution. For example, a solution containing a polydimethylsiloxane soluble insulating material is formed on the dielectric layer 20 by spin coating. Since the solution is subjected to centrifugal force during the spin coating process, the solution can be spread evenly. At the same time, under the action of its own gravity, the solution can enter into tiny pits on the surface of the dielectric layer 20. After the solution is solidified, the insulating layer 30 tightly combined with the dielectric layer 20 can be obtained.

[0119] It is understandable that the insulating layer 30 may also be directly attached to the dielectric layer 20 . Although the dielectric layer 20 and the insulating layer 30 are not tightly combined, the purpose of improving the anti-breakdown performance of the dielectric layer 20 can still be achieved.

[0120] It is understandable that, in actual manufacturing, when the insulating layer 30 includes a second insulating layer, the second insulating layer can be first formed on the surface of the dielectric layer 20 and then transferred to the surface of the first electrode layer 10 together with the dielectric layer 20 .

[0121] It is understandable that when the alternating electric field generating electrode 100 includes an insulating layer 30 , it is preferred to first heat-press the dielectric polymer initial film to form the dielectric layer 20 , then mold the insulating layer 30 on the dielectric layer 20 , and then transfer to the first electrode layer 10 .

[0122] In some embodiments of the present application, the alternating electric field generating electrode 100 further includes a second electrode layer.

[0123] The first conductive layer 41 can be formed by magnetron sputtering, electron beam evaporation, arc plasma plating, ion plating, molecular beam epitaxy, etc. In some embodiments, the alternating electric field generating electrode 100 does not have a first insulating layer, that is, the second electrode layer is directly disposed on the inner side of the dielectric layer 20. When the first conductive layer 41 is formed on the inner side of the dielectric layer 20 by deposition, the surface defects of the dielectric layer 20 can be effectively compensated.

[0124] In some embodiments of the present application, the first flexible conductive layer 42 may be directly formed on the first conductive layer 41 in a manner of being bonded to the first conductive layer 41. For example, the first flexible conductive layer 42 may be bonded to the first conductive layer 41 by glue.

[0125] In some embodiments of the present application, the second conductive layer 43 may be directly formed on the first flexible conductive layer 42 in a manner of being bonded to the first flexible conductive layer 42. For example, the second conductive layer 43 may be bonded to the first flexible conductive layer 42 by glue.

[0126] It can be understood that the above-mentioned method for preparing the alternating electric field generating electrode 100 is intended to clearly illustrate the implementation verification process of the present application. The method for preparing the alternating electric field generating electrode 100 can also be implemented in other alternative ways. For example, after the entire first electrode layer 10 is formed, the first electrode layer 10 is bonded to the dielectric layer 20 to complete the process of forming the first electrode layer 10 on the dielectric layer 20; for another example, the copper foil of the circuit board can be used as the second electrode layer; for another example, the first electrode layer 10 can be formed first, and then the dielectric layer 20 can be formed on the first electrode layer 10.

[0127] In addition, in some embodiments, the alternating electric field generating electrode 100 further includes a conductive attachment layer 50. There are many ways to set the conductive attachment layer 50, for example: a sheet-shaped conductive attachment layer 50 made of a material with good adhesion and biocompatibility is fixed on the surface of the upper film layer; or a solution of a material with good adhesion and biocompatibility is coated on the surface of the upper film layer, and the conductive attachment layer 50 is formed after curing. The upper film layer refers to a film layer adjacent to the conductive attachment layer 50 according to the film layer sequence designed for the alternating electric field generating electrode 100; the upper film layer can be a dielectric layer 20, a first insulating layer, or a second electrode layer.

[0128] Further, in order to better implement the alternating electric field generating electrode 100 in the embodiment of the present application, on the basis of the alternating electric field generating electrode 100, the present application also provides a tumor treatment electrode patch, and the tumor treatment electrode patch includes the alternating electric field generating electrode 100 as in any of the above embodiments. Since the tumor treatment electrode patch in the embodiment of the present application is provided with the alternating electric field generating electrode 100 in the above embodiment, it has all the beneficial effects of the above alternating electric field generating electrode 100, which will not be described in detail here.

[0129] Furthermore, in order to better implement the tumor treatment electrode patch in the embodiment of the present application, on the basis of the tumor treatment electrode patch, the present application also provides a tumor treatment system, and the tumor treatment system includes the tumor treatment electrode patch as in any of the above embodiments. Since the tumor treatment system in the embodiment of the present application is provided with the alternating electric field generating electrode 100 of the above embodiment, it has all the beneficial effects of the above alternating electric field generating electrode 100, which will not be described in detail here.

[0130] The technical scheme and technical effects of the present application are described in detail below through specific embodiments and comparative examples. The following embodiments are only some embodiments of the present application and do not specifically limit the present application.

[0131] Example 1 Screening of dielectric materials

[0132] The dielectric materials listed in Table 1 were tested for dielectric constant and breakdown field strength at the same test frequency (1 kHz) and 25°C; the results are recorded in Table 1.

[0133] Table 1

[0134] project Dielectric Materials Dielectric constant Dielectric loss 1 <![CDATA[P(VDF-TS) containing CF3C6H4]]> 50 0.25 2 PVDF 8.5 0.03 3 P(VDF-TrFE-CFE) 40 0.05

[0135] As can be seen from the above table, P(VDF-TS) containing CF3C6H4 has a higher dielectric constant and relatively lower dielectric loss, and has more balanced dielectric and insulation properties. It is used to make dielectric layers, which helps to improve the electric field strength of the alternating electric field generating electrode when the thickness and area of ​​the dielectric layer are constant.

[0136] Example 2 Improvement of hot pressing process

[0137] (1) Schemes 2-1 to 2-11: Provide a flexible printed circuit board, which includes a polyimide base layer and a copper foil area (thickness of about 0.04 mm) formed on the base layer, and the circuit board has a power interface for connecting to a power source. Take a finished film made of a dielectric material, put it into a vacuum drying oven at a temperature of T, preheat it for 15 minutes, take out the film and put it on the sample platform of a hot press, set the pressure of the hot press to P, and heat press the film under this pressure for a time of t. After the film cools down, remove the film and bond it to the copper foil area to form a dielectric layer. Wherein, T, P, and t are taken according to Table 2.

[0138] Among them, the film before hot pressing refers to the finished film made of dielectric material, and the film after hot pressing refers to the dielectric layer film obtained after hot pressing process.

[0139] The breakdown voltage and breakdown field strength of the dielectric layer were tested, and the results are shown in Table 3.

[0140] Table 2

[0141]

[0142]

[0143] Table 3

[0144]

[0145] (2) Schemes 3-1 to 3-3: Prepare the dielectric layer and measure the performance of the detector according to the test methods of Schemes 2-1 to 2-11. Wherein, T, P, and t are taken according to Table 4. At the same test frequency (1kHz) and 25°C, the performance data measured are recorded in Table 4.

[0146] Table 4

[0147]

[0148] (i) Take the finished film and dielectric layer film in Scheme 2-1 and observe them under an electron microscope. The results are as follows Figure 6 and Figure 7 As shown. Figure 6 and Figure 7 It can be seen that after hot pressing treatment, the inside of the film becomes denser, indicating that hot pressing treatment helps to reduce defects inside the film.

[0149] (ii) Combining Table 2 and Table 3, it can be concluded that: compared with the film before hot pressing, the thickness of the films of Schemes 2-1 to 2-6 and Schemes 2-8 to 2-11 after hot pressing is reduced, and all have a breakdown field strength not lower than that of the film before hot pressing, and among them, in Schemes 2-1 to 2-4 and Schemes 2-8 to 2-11, the film also obtains a higher breakdown field strength after hot pressing and can withstand a higher breakdown voltage, indicating that hot pressing treatment under a certain pressure (greater than or equal to 1MPa and less than 10MPa) can thin the film without damaging the film, and when the pressure is 3 to 9MPa, it helps to improve the insulation of the film, and when the pressure is 3 to 5MPa, it can greatly improve the insulation of the film;

[0150] (III) As can be seen from Table 4, when the hot pressing temperature is 90°C, the film is damaged; when the hot pressing temperature is 70°C, the insulation performance of the film is improved, but at the same time the dielectric performance decreases significantly; when the hot pressing temperature is 50°C, not only the dielectric performance of the film does not decrease, but also the insulation performance is improved, indicating that the temperature of the hot pressing process is optimized. When the temperature is greater than or equal to 40°C and less than 90°C, it is helpful to improve the insulation performance of the dielectric layer. Hot pressing at a temperature of 40-50°C can not only ensure that the dielectric layer does not decrease, but also improve its insulation performance, with the best processing effect.

[0151] The above is a detailed introduction to the alternating electric field generating electrode for tumor treatment and its preparation method, electrode patch and tumor electric field treatment system provided in the embodiments of the present application. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for technical personnel in this field, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. An alternating electric field generating electrode for tumor treatment, characterized in that: comprising a first electrode layer and a dielectric layer which are stacked; Wherein, the material of the dielectric layer includes P(VDF-TS) containing CF3C6H4.

2. The alternating electric field generating electrode for tumor treatment according to claim 1, characterized in that: The thickness of the dielectric layer is 1 to 100 μm; preferably, the thickness of the dielectric layer is 1 to 10 μm; preferably, the thickness of the dielectric layer is 2 to 8 μm; And / or, the breakdown field strength of the dielectric layer is greater than or equal to 50V / μm; preferably, the breakdown field strength of the dielectric layer is 70-110V / μm; and / or, the dielectric constant of the dielectric layer at 1 kHz and a temperature of 25° C. is greater than or equal to 50; And / or, the material of the dielectric layer further comprises one or more of PVDF, P(VDF-TrFE-CTFE), P(VDF-TrFE-CFE), P(VDF-TrFE-CFE-CTFE), and P(VDF-DB) containing CH=CF; And / or, the material of the dielectric layer further comprises inorganic dielectric material particles, and the material of the inorganic dielectric material particles comprises one or more of ceramic, glass, and mica; And / or, the alternating electric field generating electrode also includes an insulating layer, the insulating layer includes a first insulating layer and / or a second insulating layer, the first insulating layer is arranged on a side of the dielectric layer away from the first electrode layer, and the second insulating layer is arranged between the dielectric layer and the first electrode layer.

3. The alternating electric field generating electrode for tumor treatment according to claim 2, characterized in that: The breakdown field strength of the first insulating layer is greater than the breakdown field strength of the dielectric layer; and / or, the breakdown field strength of the second insulating layer is greater than the breakdown field strength of the dielectric layer; And / or, the thickness of the insulating layer is 1 to 1000 nm; And / or, a ratio of the thickness of the dielectric layer to the thickness of the insulating layer is greater than or equal to 20 and less than or equal to 2000; And / or, the materials of the first insulating layer and the second insulating layer are independently selected from inorganic insulating materials or organic insulating materials, the inorganic insulating materials include at least one of silicon dioxide, silicon nitride, zirconium oxide, boron nitride, aluminum nitride, chromium carbide and aluminum oxide, and the organic insulating materials include at least one of siloxane polymers, silazane polymers, polymethyl methacrylate, polyimide, polyethylene, polyethylene terephthalate, polyphenylene sulfide, polyurethane, fluorinated ethylene propylene copolymer, fusible polytetrafluoroethylene, ethylene-tetrafluoroethylene copolymer, polyetheretherketone, polysilazane, polycarbonate, silicone resin, fluoride material and rubber.

4. The alternating electric field generating electrode for tumor treatment according to claim 1, characterized in that: The invention also includes a second electrode layer, which is arranged on a side of the dielectric layer away from the first electrode layer.

5. The alternating electric field generating electrode for tumor treatment according to claim 4, characterized in that: The second electrode layer includes a first conductive layer, a first flexible conductive layer and a second conductive layer which are stacked.

6. The alternating electric field generating electrode for tumor treatment according to claim 5, characterized in that: The material of the first conductive layer includes one or a combination of Al, Ti, Au, Ag, Zn, Cu, Pt, Cr, Fe, Sn or Ni; and / or, The first flexible conductive layer includes conductive paper or conductive elastomer, and the conductive elastomer includes conductive rubber or conductive silicone; and / or, The material of the second conductive layer includes copper, silver, titanium or stainless steel.

7. A method for preparing an alternating electric field generating electrode for tumor treatment, characterized in that: The following steps are involved: providing a first electrode layer; forming a dielectric layer on one side of the first electrode layer to obtain an alternating electric field generating electrode for tumor treatment; Wherein, the dielectric layer includes P(VDF-TS) containing CF3C6H4.

8. The preparation method according to claim 7, characterized in that: The steps of forming the dielectric layer include: forming a dielectric polymer initial film, wherein the material of the dielectric polymer initial film includes P(VDF-TS) containing CF3C6H4; performing a heat pressing process on the dielectric polymer initial film to form a dielectric layer; And / or, the conditions of the hot pressing treatment are: The temperature is greater than or equal to 40°C and less than 90°C; preferably, the temperature is 40-50°C; and / or, The pressure is greater than or equal to 1 MPa and less than 10 MPa; preferably, the pressure is 3-5 MPa.

9. An alternating electric field generating electrode patch for tumor treatment, characterized in that: It comprises the alternating electric field generating electrode for tumor treatment as claimed in any one of claims 1 to 6, or comprises the alternating electric field generating electrode for tumor treatment prepared by the preparation method according to claim 7 or 8.

10. A tumor treatment system, characterized in that: Comprising the electrode patch as claimed in claim 9.

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