P-type bismuth telluride-based material and preparation method and application thereof

By introducing Bi elements into bismuth telluride materials and optimizing the process, the problem of poor mechanical properties of the material is solved, and efficient combination of thermoelectric properties and mechanical properties is achieved, which significantly improves the application potential of the material.

CN119706754APending Publication Date: 2025-03-28INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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Patent Information

Application Number
CN202411908027.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-24
Publication Date
2025-03-28

AI Technical Summary

Technical Problem

Existing bismuth telluride materials are prone to interlayer cleavage during service, with poor mechanical properties, resulting in high waste rate.

Method used

By introducing Bi elements with similar electronegativity to Te elements, doped into the lattice of matrix material Bi0.55Sb1.45Te3, the carrier concentration and density are optimized, and the mechanical properties of the material are improved through ball milling and hot press sintering processes.

Benefits of technology

The excellent mechanical properties and thermoelectric properties of p-type bismuth telluride-based materials were achieved, the thermoelectric superiority value was improved to 1.45, and the compressive strength and Vickers hardness were also significantly improved, solving the problem of poor mechanical properties.

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Abstract

The invention provides a p-type bismuth telluride-based material and a preparation method and application thereof, and belongs to the technical field of thermoelectric energy conversion materials. The p-type bismuth telluride-based material comprises a base material and a Bi element doped into crystal lattices of the base material; the base material comprises BiaSb1. 45Te3, and a is greater than or equal to 0.55 and less than or equal to 0.58. The thermoelectric performance and the mechanical performance of the material are improved by introducing the Bi element (electronegativity 2.02) which has a small electronegativity difference with the Te element (electronegativity 2.1), and the small electronegativity difference enables the Bi element in a matrix to have higher solubility, so that the carrier concentration (the doping of the Bi element mainly optimizes the carrier concentration) and the density of the material are improved; and the increase of the carrier concentration can improve the conductivity, so that the thermoelectric performance is improved.
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