Magnetron sputtering coating equipment integrated with X-ray fluorescence spectrophotometer and working method of magnetron sputtering coating equipment

Abstract

The invention discloses magnetron sputtering coating equipment integrated with an X fluorescence spectrometer and a working method of the magnetron sputtering coating equipment, and relates to the technical field of thin film deposition. The magnetron sputtering coating equipment comprises a sample injection cavity, a sample placing cavity, an isolating valve and a process cavity which are sequentially distributed in the linear direction; a transmission manipulator is mounted in the sample injection cavity and is used for driving a wafer to be transmitted and moved in the lofting cavity and the process cavity; an X fluorescence spectrophotometer for dynamically detecting the thickness of a wafer film is mounted on the sample injection cavity; the lofting cavity is matched with the transmission manipulator and is used for storing wafers; a liftable sample table, an angle-adjustable cathode target head and a flexible mechanical structure are arranged, the difference between the thickness data and the target thickness is judged at the first time of obtaining the thickness data of the spectrograph, so that the angle of the cathode target head is automatically adjusted, and the target thickness is corrected; the whole equipment is high in automation degree, and the working efficiency is improved.

Description

Technical Field

[0001] The invention relates to the technical field of thin film deposition, and in particular to a magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer and a working method thereof. Background Art

[0002] Thin film deposition equipment is roughly divided into physical vapor deposition (PVD) equipment and chemical vapor deposition (CVD) equipment. Physical vapor deposition is a technology that uses physical methods to vaporize materials into gaseous atoms, molecules or ionize them into ions under vacuum conditions, and deposits them on the surface of the substrate through plasma. Magnetron sputtering technology, as an efficient physical vapor deposition equipment, is widely used in industrial occasions such as semiconductors, microelectronics, aerospace, and solar energy because of its advantages of high speed, low temperature and low damage. The crystal of MoSi2 has a tetragonal phase structure and a hexagonal phase structure. It is an intermediate phase with the highest silicon content in the Mo-Si binary alloy system and a Dalton-type metal compound with a fixed composition. It has the dual characteristics of metal and ceramic and is a high-temperature material with excellent performance. At present, its main industrial product application is in the production of thermocouple protection tubes for high-temperature heating elements.

[0003] Disadvantages of existing products: Under the current market conditions, many magnetron sputtering equipments run continuously for a long time, resulting in rapid consumption of cathode target materials, and changes in target surface morphology will cause fluctuations in coating rate, especially when the sputtering track is too deep, the sputtering rate will change significantly, causing the film thickness to deviate from expectations, and the uniformity within the film layer will also be affected, damaging the quality of the film layer. This may cause problems with the crystallization of molybdenum disilicide, and it is impossible to obtain a film with a strict molybdenum-silicon ratio of 1:2, which has a huge impact on the subsequent annealing to obtain a pure tetragonal phase structure film. For this reason, most users can only use calibration wafers to frequently calibrate the sputtering rate and adjust the process parameters according to the test results. However, coating cannot be continued before the calibration experiment is completed. The long calibration cycle will incur huge time costs for users engaged in mass production, and frequently adjusting the process parameters according to the test results will also generate a lot of workload. Summary of the invention

[0004] The purpose of the present invention is to provide a magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer and a working method thereof, which can realize sputtering film formation of wafers of 8 inches or less. The X-ray fluorescence spectrometer performs film thickness test on the wafers that have just been coated. Through the software scheduling of the equipment, a series of fully automatic calibration actions such as coating-measuring film thickness-adjusting the sample stage height-adjusting the target head angle-adjusting the sputtering power can be realized and historical records can be generated. In this way, a molybdenum disilicide alloy with a stable structure can be obtained.

[0005] The purpose of the present invention can be achieved through the following technical solutions:

[0006] A magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer comprises a sampling cavity, a sample placement cavity, an isolation valve and a process cavity which are sequentially distributed along a linear direction;

[0007] A transmission manipulator is installed inside the sample injection cavity, and the transmission manipulator is used to drive the wafer to transfer and move in the sample injection cavity and the process cavity; an X-ray fluorescence spectrometer for dynamic detection of wafer film thickness is installed on the sample injection cavity;

[0008] The layout cavity cooperates with the transmission robot to store wafers;

[0009] The isolation valve is used to isolate the vacuum state of the sample chamber from that of the process chamber;

[0010] The process chamber is provided with a plurality of sputtering cathode mechanisms, the sputtering cathode mechanisms comprising an angle swing mechanism and a cathode target head provided on the angle swing mechanism, the angle swing mechanism being used to drive the cathode target head to swing;

[0011] A sample rack is installed at the bottom of the process chamber, and the sample rack is used to adjust the distance between the wafer and the cathode target head.

[0012] As a further solution of the present invention: the angle swing mechanism comprises:

[0013] A flange seat, wherein the flange seat is fixedly mounted on the process chamber housing;

[0014] A telescopic shaft, the telescopic shaft passes through the flange seat and moves in a vertical direction;

[0015] A push rod, the push rod is tilted and connected to the telescopic shaft via a first universal coupling;

[0016] A support plate, a cathode target head is installed on the top of the support plate, a pin shaft for driving the support plate to rotate is arranged inside the support plate, and the pin shaft is driven to rotate by a push rod.

[0017] As a further solution of the present invention: the angle swing mechanism further comprises a hollow column, the hollow column is arranged at the top center of the flange seat, the hollow column penetrates the mounting fixing seat and is connected to the second vacuum bellows, and the top of the second vacuum bellows is connected to the cathode target head;

[0018] A support plate is rotatably connected to the mounting fixing seat.

[0019] As a further solution of the present invention: a telescopic rod is arranged through the flange seat, the telescopic rod moves along the vertical direction, the telescopic rod is connected to a rotating rod through a second universal joint, the rotating rod is arranged at an angle, and the rotating rod passes through the fixed plate and is connected to the baffle, and the baffle cooperates with the cathode target head.

[0020] As a further solution of the present invention: a first wafer holder is arranged on the top of the sample rack.

[0021] As a further solution of the present invention: a calibration mechanism is installed in the injection chamber, and the calibration mechanism includes a first screw rod, a lifting block is threadedly connected to the first screw rod, a lifting shaft is fixedly installed on the lifting block, and a clamp is fixedly installed on the lifting shaft.

[0022] As a further solution of the present invention: the clip is provided with an inclined portion, and the angle of the inclined portion is 120-135 degrees.

[0023] As a further solution of the present invention: a transmission manipulator is arranged inside the injection chamber, and the transmission manipulator includes a two-way guide rail, a first slide plate is slidably connected to the bottom of the two-way guide rail, a first servo motor is fixedly installed on the first slide plate, and a gear is fixedly installed on the output shaft of the first servo motor, and the gear is meshed and connected with a rack arranged inside the two-way guide rail;

[0024] A second slide plate is slidably connected to the top of the two-way guide rail, and a support handle is fixedly installed on the second slide plate;

[0025] Both ends of the first slide plate are provided with traction ropes, and the traction ropes pass around the transmission wheel and are connected to the second slide plate.

[0026] As a further solution of the present invention: a lifting wafer holder is arranged inside the placement cavity, and the lifting wafer holder includes a second servo motor, a second screw rod is fixedly mounted on the output shaft of the second servo motor, the second screw rod rotates in the guide rail, the second screw rod is connected to a lifting frame via a slider, and the lifting frame is connected to the second wafer holder via bolts.

[0027] As a further solution of the present invention: a working method of a magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer, comprising the following steps:

[0028] Step 1: The operator places the wafer on the lifting wafer holder of the sample chamber and starts the vacuum pump group; after waiting for the vacuum in the chamber to reach the specified vacuum degree, the isolation valve is opened, and the transfer robot carries the wafer to the first wafer holder of the process chamber, and the isolation valve is closed;

[0029] Step 2: After the vacuum degree in the injection chamber reaches a specified value, the first wafer holder sends the wafer to a specified height through a lifting motor, and starts to rotate at a uniform speed, and argon gas is introduced, and the wafer is sputtered and coated through the cathode target head in the process chamber; when the angle of the cathode target head needs to be adjusted, the telescopic shaft is driven to extend and retract, and the push rod is driven to move through the first universal coupling, thereby driving the cathode target head to rotate around the pin shaft to achieve angle adjustment;

[0030] Step 3. After the coating is completed, open the isolation valve, and the transfer robot will send the wafer tray back to the clamp below the X-ray fluorescence spectrometer for positioning; divide the wafer into 8 points along the diameter, and use the transfer robot to transport the wafer to the corresponding position of each point, detect the film thickness of each point in turn, and automatically generate a test report.

[0031] Beneficial effects of the present invention:

[0032] The present invention integrates the magnetron sputtering equipment with the X-ray fluorescence spectrometer, and the thickness measurement by the spectrometer will not damage the wafer, which greatly reduces the time for operators to verify the process;

[0033] The present invention performs the entire self-calibration process in a vacuum state to avoid contamination of the wafer;

[0034] The present invention utilizes co-sputtering to deposit molybdenum disilicide thin films. The film thickness of each wafer can be measured by an X-ray fluorescence spectrometer and compared with the expected film thickness. The output power of the sputtering power supply is then adjusted to make the subsequent coating rate meet the expectations, thereby achieving the sputtering rate calibration. Similarly, the uniformity within the wafer can be calculated based on the measured film thickness at each position on the wafer. The film thickness uniformity calibration is then achieved by adjusting the target head angle. Fully automatic sputtering rate and film thickness uniformity calibration is achieved, thereby improving the wafer coating yield rate and greatly improving the efficiency.

[0035] The present invention is equipped with a liftable sample stage and an angle-adjustable cathode target head, and a flexible mechanical structure. When the thickness data of the spectrometer is obtained, the gap with the target thickness is judged for the first time, and the cathode target head angle is automatically adjusted to correct the target thickness, so that the whole equipment has a high degree of automation and the work efficiency is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The present invention will be further described below in conjunction with the accompanying drawings.

[0037] Figure 1 It is a schematic diagram of the overall structure of the present invention;

[0038] Figure 2 It is a schematic structural diagram of the sputtering cathode mechanism of the present invention from a first viewing angle;

[0039] Figure 3 It is a second perspective structural schematic diagram of the sputtering cathode mechanism of the present invention;

[0040] Figure 4 It is a schematic diagram of the overall structure of the calibration mechanism of the present invention;

[0041] Figure 5 It is a schematic diagram of the overall structure of the transmission robot of the present invention;

[0042] Figure 6 It is a schematic diagram of the internal structure of the transmission robot of the present invention;

[0043] Figure 7 It is a schematic diagram of the internal structure of the lofting cavity of the present invention;

[0044] Figure 8 It is a schematic diagram of the internal structure of the sample rack of the present invention;

[0045] Fig. 9 This is the first test report of the present invention;

[0046] Fig.10 It is the second test report of the present invention;

[0047] Fig.11 It is a schematic diagram of the EDS test results of the present invention.

[0048] In the figure: 1. Injection chamber;

[0049] 2. Loft the cavity;

[0050] 21. second servo motor; 22. second lead screw; 23. guide rail; 24. lifting frame; 25. second wafer holder;

[0051] 3. Process cavity;

[0052] 4. Transmission manipulator;

[0053] 41. two-way guide rail; 42. first servo motor; 43. first slide plate; 44. second slide plate; 45. handle; 46. transmission wheel; 47. gear; 48. rack; 49. traction rope;

[0054] 5. Calibration agency;

[0055] 51. first screw rod; 52. lifting block; 53. lifting shaft; 54. clamp; 55. tilting portion;

[0056] 6. X-ray fluorescence spectrometer;

[0057] 7. Isolation valve;

[0058] 8. Sputtering cathode mechanism;

[0059] 811, flange seat; 812, driving motor; 813, first vacuum bellows; 814, telescopic shaft; 815, first universal coupling; 816, push rod; 817, hollow column; 818, mounting seat; 819, second vacuum bellows; 8110, support plate; 8111, pin shaft;

[0060] 82. Cathode target head;

[0061] 831, swing cylinder; 832, coupling; 833, telescopic rod; 834, second universal coupling; 835, rotating rod; 836, baffle; 837, fixed plate;

[0062] 9. Sample rack;

[0063] 91. Lifting mechanism; 92. Rotating motor; 93. Rotating shaft; 100. First wafer holder. DETAILED DESCRIPTION

[0064] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0065] See also Figure 1 As shown, the present invention is a magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer, which is linearly distributed from left to right in sequence, including a sampling chamber 1, a sample chamber 2, an isolation valve 7 and a process chamber 3; the entire body is formed by vacuum sealing connection;

[0066] Four sputtering cathode mechanisms 8 are arranged on the process chamber 3. The sputtering cathode mechanism 8 includes an angle swing mechanism and a cathode target head 82 arranged on the angle swing mechanism. The angle swing mechanism is used to drive the cathode target head 82 to swing, so as to realize thin film deposition.

[0067] See also Figure 2-3 As shown, the angle swing mechanism includes a flange seat 811, which is fixedly mounted on the shell of the process chamber 3 and is used to connect the vacuum chamber of the process chamber 3 to achieve ultra-high vacuum sealing and interconnection with other structures; a hollow column 817 is fixedly mounted at the top center of the flange seat 811, and the hollow column 817 penetrates the mounting fixing seat 818 and is connected to the second vacuum bellows 819, and the mounting fixing seat 818 is connected to the hollow column 817 by clamping, which is convenient for disassembly, and the top of the second vacuum bellows 819 is connected to the cathode target head 82;

[0068] The mounting base 818 is rotatably connected to a support plate 8110 , and a cathode target head 82 is fixedly mounted on the top of the support plate 8110 .

[0069] A bracket is fixedly installed on one side of the flange seat 811, and a driving motor 812 is fixedly installed on the bracket. The driving motor 812 has a through-type screw inside, and a first vacuum bellows 813 is installed on the end of the through-type screw. A telescopic shaft 814 is installed on the end of the first vacuum bellows 813. The telescopic shaft 814 passes through the flange seat 811 and moves in a vertical direction. The telescopic shaft 814 is connected to the push rod 816 through a first universal joint 815. The first universal joint 815 can realize 0-90 rotation. The push rod 816 is tilted, and the end of the push rod 816 is connected to the pin 8111.

[0070] Specifically, the internal screw of the drive motor 812 is started to push out or retract, driving the first vacuum bellows 813 to compress and stretch, thereby driving the telescopic shaft 814 connected thereto to make an axial displacement. The axial displacement of the telescopic shaft 814 drives the push rod 816 to generate an angle through the first universal coupling 815, thereby driving the support plate 8110 to rotate, and then driving the cathode target head 82 to move; at this time, the cathode target head 82 will rotate around the pin shaft 8111 to achieve the angle adjustment action.

[0071] A telescopic rod 833 is provided through the flange seat 811, and the telescopic rod 833 moves in the vertical direction. A rotating rod 835 is connected to the telescopic rod 833 through a second universal coupling 834. The rotating rod 835 is tilted, and the rotating rod 835 passes through a fixed plate 837 and is connected to a baffle 836, and the baffle 836 cooperates with the cathode target head 82; the bottom of the telescopic rod 833 is connected to the swing cylinder 831 through a coupling 832;

[0072] Specifically, the swing cylinder 831 is started to drive the telescopic rod 833 to move through the coupling 832, and the telescopic rod 833 drives the rotating rod 835 to move through the second universal coupling 834, thereby driving the baffle 836 to shield the cathode target head 82 to reduce environmental pollution.

[0073] See also Figure 5-6 As shown, a transfer robot 4 is installed inside the injection chamber 1, and the transfer robot 4 is used to drive the wafer to transfer and move in the placement chamber 2 and the process chamber 3;

[0074] The transmission robot 4 includes a two-way guide rail 41, a first slide 43 is slidably connected to the bottom of the two-way guide rail 41, a first servo motor 42 is fixedly installed on the first slide 43, a gear 47 is fixedly installed on the output shaft of the first servo motor 42, and the gear 47 is meshingly connected with a rack 48 arranged inside the two-way guide rail 41; a second slide 44 is slidably connected to the top of the two-way guide rail 41, and a support hand 45 is fixedly installed on the second slide 44; both ends of the first slide 43 are provided with a traction rope 49, and the traction rope 49 passes around the transmission wheel 46 and is connected to the second slide 44.

[0075] Specifically, the first servo motor 42 is started to drive the gear 47 to rotate, and the gear 47 is meshed with the rack 48, so that the first slide 43 moves left or right, and then the second slide 44 is driven to move right or left through two traction ropes 49, driving the support hand 45 to move.

[0076] The injection chamber 1 is equipped with an X-ray fluorescence spectrometer 6 for dynamically detecting the wafer film thickness; the sample placement chamber 2 cooperates with the transmission robot 4 to store the wafer; the isolation valve 7 is used to isolate the vacuum state of the sample placement chamber 2 and the process chamber 3; the bottom of the process chamber 3 is equipped with a sample rack 9, and the sample rack 9 is used to adjust the distance between the wafer and the cathode target head 82.

[0077] See also Figure 8 As shown, a lifting mechanism 91 is provided inside the sample rack 9, and the lifting mechanism 91 can be driven by a cylinder or a servo motor or a screw rod. A rotating motor 92 is provided on the lifting mechanism 91, and a rotating shaft 93 is fixedly mounted on the output shaft of the rotating motor 92, and a first wafer holder 100 is mounted on the rotating shaft 93; the sample rack 9 is used to adjust the distance between the wafer and the automatically angle-adjusting sputtering cathode 8 and the wafer rotation speed, and cooperates with the transmission robot 4 to realize the wafer taking and placing action.

[0078] See also Figure 4 As shown, a calibration mechanism 5 is installed in the injection chamber 1, and the calibration mechanism 5 includes a first screw rod 51, a lifting block 52 is threadedly connected to the first screw rod 51, the lifting block 52 passes through two guide rods, a lifting shaft 53 is fixedly installed on the lifting block 52, and a clamp 54 is fixedly installed on the lifting shaft 53. When the first screw rod 51 is started to rotate, the lifting block 52 is driven to move, and then the lifting shaft 53 is driven to move, and then the clamp 54 is driven to move.

[0079] The clamp 54 is provided with an inclined portion 55, and the angle of the inclined portion 55 is 120-135 degrees, which is used for automatic mechanical calibration during the wafer falling process, so that the wafer is in a circular shape and the absolute positioning of the wafer is achieved.

[0080] See also Figure 7 As shown, a lifting wafer holder is provided inside the layout cavity 2, and the lifting wafer holder includes a second servo motor 21, and a second screw rod 22 is fixedly mounted on the output shaft of the second servo motor 21, and the second screw rod 22 rotates in the guide rail 23, and a lifting frame 24 is connected to the second screw rod 22 through a slider, and the lifting frame 24 slides in the guide rail 23, and a second wafer holder 25 is connected to the lifting frame 24 through bolts.

[0081] First, the second wafer holder 25 is fixed on the lifting frame 24 by means of bolts, and then the lifting frame 24 is driven to move up and down by means of the second servo motor 21 and the second screw rod 22 .

[0082] See also Figure 1-8 As shown, a working method of a magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer comprises the following steps:

[0083] Step 1: The operator places the wafer on the lifting wafer holder of the sample chamber 2 and starts the vacuum pump group; after waiting for the vacuum in the chamber to reach the specified vacuum degree, the isolation valve 7 is opened, and the transfer robot 4 carries the wafer to the first wafer holder 100 of the process chamber 3, and the isolation valve 7 is closed;

[0084] Step 2: After the vacuum degree in the injection chamber 1 reaches the specified value, the wafer holder 9 sends the wafer to the specified height through the servo motor and starts to rotate at a constant speed. The process gas argon is introduced, and the gas flow rate is set to 15sccm through the PC end. The two cathodes used are respectively equipped with pure silicon targets and pure molybdenum targets, and the cathode DC power supplies are started respectively, wherein the molybdenum sputtering power is constant at 22W, and the silicon adjustable sputtering power T1 is preset to 120W. The cathode baffle 836 and the sample stage baffle are opened to start coating, and the sputtering target thickness T1 is 0.16um; when the angle of the cathode target head 82 needs to be adjusted, the telescopic shaft 814 is driven to extend and retract, and the push rod 816 is driven to move through the first universal coupling 815, thereby driving the cathode target head 82 to rotate around the pin shaft 8111 to achieve angle adjustment;

[0085] Step 3: After the coating is completed, the isolation valve 7 is opened, and the transfer robot 4 sends the wafer holder back to the clamp 54 below the X-ray fluorescence spectrometer 6 for positioning; 8 points are divided equally along the diameter of the wafer, and the wafer is transported to the corresponding position of each point by the transfer robot 4, and the film thickness of each point is detected in turn and a test report is automatically generated, such as Fig. 9 As shown:

[0086] Step 4: The system automatically reads the average value T2 in the test report ( Fig. 90.163um in the experiment), and put it and the target thickness T1 into the formula T1 / T2=a*(P1 / P2), a is the sputtering power adjustment coefficient (determined by the sputtering material, the default is 1, and it is confirmed by calibration). In this experiment, T1 is 0.16um, T2 is 0.163um, and P1 is 120W. Through calculation, the sputtering power P2 of silicon after adjustment is 118W, and the system automatically enters P2;

[0087] Step 5: The system retrieves the data of 8 positions of thickness measured by the X-ray fluorescence spectrometer 14, and reads the film thickness uniformity ( Fig. 9 3.37% in the experiment), determine whether it is higher than the set value (3%), if it is higher than the set value, enter the uniformity adjustment system: read the maximum thickness point and determine its position on the wafer, calculate the distance H between this point and the center of the wafer (when the maximum thickness point is at one-fourth of the wafer diameter, the uniformity is optimal, that is, H = 50mm), substitute into the formula X = b*(H-50), X is the target head adjustment angle, b is the target head angle adjustment coefficient (the default is 0.1, confirmed by calibration), in this experiment H is 75mm, so the system automatically rotates the target head by 2.5° through the drive motor 13 on the target head (if X is positive, it rotates upward, if it is negative, it rotates downward), the rotation method is as above;

[0088] Step 6: The system generates historical data of the above adjustment parameters for operators to view;

[0089] Repeat the above steps 2 and 3 to obtain the second round of sputtering thickness data and test report, such as Fig.10 As shown, the average film thickness is 0.161um and the uniformity is 1.24%. By comparison, it can be seen that the sputtering thickness and uniformity have been significantly improved. And through EDS testing, it can be seen that the reference Fig.11 As shown, the atomic ratio of the alloy film is 1:2, and the film quality is very high.

[0090] The above is a detailed description of an embodiment of the present invention, but the content is only a preferred embodiment of the present invention and cannot be considered to limit the scope of implementation of the present invention. All equivalent changes and improvements made within the scope of the present invention should still fall within the scope of the patent coverage of the present invention.

Claims

1. A magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer, comprising a sampling chamber (1), a sample placement chamber (2), an isolation valve (7) and a process chamber (3) sequentially distributed along a linear direction, characterized in that: A transport robot (4) is installed inside the sample injection cavity (1), and the transport robot (4) is used to drive the wafer to be transported and moved in the sample placement cavity (2) and the process cavity (3); an X-ray fluorescence spectrometer (6) is installed on the sample injection cavity (1) for dynamically detecting the thickness of the wafer film; The placement cavity (2) cooperates with the transfer robot (4) to store wafers; The isolation valve (7) is used to isolate the vacuum state of the sample chamber (2) and the process chamber (3); The process chamber (3) is provided with a plurality of sputtering cathode mechanisms (8), the sputtering cathode mechanisms (8) comprising an angle swing mechanism and a cathode target head (82) arranged on the angle swing mechanism, the angle swing mechanism being used to drive the cathode target head (82) to swing; A sample rack (9) is installed at the bottom of the process chamber (3), and the sample rack (9) is used to adjust the distance between the wafer and the cathode target head (82).

2. The magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer according to claim 1, characterized in that: The angle swing mechanism comprises: A flange seat (811), wherein the flange seat (811) is fixedly mounted on a shell of the process chamber (3); A telescopic shaft (814), wherein the telescopic shaft (814) passes through the flange seat (811) and moves in a vertical direction; A push rod (816), wherein the push rod (816) is arranged at an angle, and the push rod (816) is connected to the telescopic shaft (814) via a first universal coupling (815); A support plate (8110), a cathode target head (82) is installed on the top of the support plate (8110), a pin shaft (8111) for driving the support plate (8110) to rotate is arranged inside the support plate (8110), and the pin shaft (8111) is driven to rotate by a push rod (816).

3. The magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer according to claim 2, characterized in that: The angle swing mechanism further comprises a hollow column (817), wherein the hollow column (817) is arranged at the top center of the flange seat (811), the hollow column (817) penetrates the mounting fixing seat (818) and is connected to the second vacuum bellows (819), and the top of the second vacuum bellows (819) is connected to the cathode target head (82); A support plate (8110) is rotatably connected to the mounting base (818).

4. The magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer according to claim 2, characterized in that: A telescopic rod (833) is provided through the flange seat (811), and the telescopic rod (833) moves in a vertical direction. A rotating rod (835) is connected to the telescopic rod (833) via a second universal joint (834). The rotating rod (835) is tilted, and the rotating rod (835) passes through a fixed plate (837) and is connected to a baffle (836), and the baffle (836) cooperates with the cathode target head (82).

5. The magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer according to claim 1, characterized in that: A first wafer bracket (100) is arranged on the top of the sample rack (9).

6. The magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer according to claim 1, characterized in that: A calibration mechanism (5) is installed in the injection chamber (1), and the calibration mechanism (5) comprises a first screw rod (51), a lifting block (52) is threadedly connected to the first screw rod (51), a lifting shaft (53) is fixedly installed on the lifting block (52), and a clamp (54) is fixedly installed on the lifting shaft (53).

7. The magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer according to claim 6, characterized in that: The clamp (54) is provided with an inclined portion (55), and the angle of the inclined portion (55) is 120-135 degrees.

8. The magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer according to claim 1, characterized in that: A transmission manipulator (4) is arranged inside the injection chamber (1), and the transmission manipulator (4) comprises a two-way guide rail (41), a first slide plate (43) is slidably connected to the bottom of the two-way guide rail (41), a first servo motor (42) is fixedly mounted on the first slide plate (43), a gear (47) is fixedly mounted on the output shaft of the first servo motor (42), and the gear (47) is meshingly connected with a rack (48) arranged inside the two-way guide rail (41); A second slide plate (44) is slidably connected to the top of the two-way guide rail (41), and a support handle (45) is fixedly mounted on the second slide plate (44); Both ends of the first slide plate (43) are provided with traction ropes (49), and the traction ropes (49) pass around the transmission wheel (46) and are connected to the second slide plate (44).

9. The magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer according to claim 1, characterized in that: A lifting wafer bracket is arranged inside the layout cavity (2), and the lifting wafer bracket comprises a second servo motor (21). A second screw rod (22) is fixedly mounted on the output shaft of the second servo motor (21), and the second screw rod (22) rotates in a guide rail (23). The second screw rod (22) is connected to a lifting frame (24) via a slider, and the lifting frame (24) is connected to a second wafer bracket (25) via bolts.

10. A working method of a magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer, characterized in that: The following steps are involved: Step 1: An operator places a wafer on the lifting wafer holder of the sample chamber (2) and starts the vacuum pump group; after waiting for the vacuum in the chamber to reach a specified vacuum degree, the isolation valve (7) is opened, and the transfer robot (4) carries the wafer to the first wafer holder (100) of the process chamber (3), and the isolation valve (7) is closed; Step 2: After the vacuum degree in the injection chamber (1) reaches a specified value, the first wafer holder (100) delivers the wafer to a specified height through a lifting motor and starts to rotate at a uniform speed, introducing argon gas, and sputtering the wafer through the cathode target head (82) in the process chamber (3); when it is necessary to adjust the angle of the cathode target head (82), the telescopic shaft (814) is driven to extend and retract, and the push rod (816) is driven to move through the first universal coupling (815), thereby driving the cathode target head (82) to rotate around the pin shaft (8111) to achieve angle adjustment; Step 3: After the coating is completed, the isolation valve (7) is opened, and the transfer robot (4) sends the wafer holder back to the clamp (54) below the X-ray fluorescence spectrometer (6) for positioning; 8 points are divided equally along the diameter of the wafer, and the wafer holder is transported to the corresponding position of each point by the transfer robot (4), and the film thickness of each point is detected in turn and a test report is automatically generated.

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