A magnetron sputtering coating equipment integrated with an X-ray fluorescence spectrometer and its working method

Abstract

The present invention discloses a magnetron sputtering coating equipment integrated with an X-ray fluorescence spectrometer and its working method, which relates to the technical field of thin film deposition. It includes a sample loading cavity, a sample placing cavity, an isolation valve and a process cavity that are sequentially distributed along a linear direction; a transfer manipulator is installed inside the sample loading cavity, and the transfer manipulator is used to drive the wafer to be transferred and moved between the sample placing cavity and the process cavity; an X-ray fluorescence spectrometer for dynamically detecting the thickness of the wafer film is installed on the sample loading cavity; the sample placing cavity cooperates with the transfer manipulator for storing the wafer; the present invention is equipped with a liftable sample stage and a cathode target head with adjustable angle, and a flexible mechanical structure. At the first time when the thickness data of the spectrometer is obtained, the gap from the target thickness is judged, and the angle of the cathode target head is automatically adjusted accordingly to correct the target thickness; the whole equipment has a high degree of automation and improves the working efficiency.

Description

Technical Field

[0001] The present invention relates to the technical field of thin film deposition, and in particular to a magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer and its working method. Background Art

[0002] Thin film deposition equipment is roughly divided into Physical Vapor Deposition (PVD) equipment and Chemical Vapor Deposition (CVD) equipment. Physical vapor deposition is a technology in which, under vacuum conditions, materials are vaporized into gaseous atoms, molecules or ionized into ions by physical methods, and are deposited on the substrate surface through plasma. As an efficient physical vapor deposition equipment, magnetron sputtering technology is widely used in industrial fields such as semiconductors, microelectronics, aerospace, and solar energy due to its advantages of high speed, low temperature, and low damage. The crystal of MoSi2 has a tetragonal phase structure and a hexagonal phase structure. It is an intermediate phase with the highest silicon content in the Mo-Si binary alloy system and is a Dalton-type intermetallic compound with a fixed composition. It has the dual characteristics of metal and ceramic and is an excellent high-temperature material. Currently, the main industrial product application is in the production of thermocouple protection tubes for high-temperature heating elements.

[0003] Disadvantages of existing products: Under the existing market conditions, many magnetron sputtering devices operate continuously for a long time, resulting in rapid consumption of the cathode target. The change in the target surface morphology will cause fluctuations in the coating rate. Especially when the sputtering track is too deep, the sputtering rate will change significantly, causing the film thickness to deviate from the expected value, and the in-plane uniformity of the film layer will also be affected, damaging the film layer quality. This may lead to problems in the crystallization of molybdenum disilicide, and it is impossible to obtain a thin film with a strict molybdenum-silicon ratio of 1:2, which has a huge impact on obtaining a pure tetragonal phase structure film after subsequent annealing. For this reason, most users can only use calibrated wafers to frequently calibrate the sputtering rate and adjust process parameters according to the test results. However, coating cannot continue until the calibration experiment is completed. The long calibration cycle will incur huge time costs for users in mass production, and frequently adjusting process parameters according to test results will also generate a lot of workload. Summary of the Invention

[0004] The purpose of the present invention is to provide a magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer and its working method, which can realize sputtering film formation of wafers with a size of 8 inches and below. The X-ray fluorescence spectrometer measures the film thickness of the wafer just coated. Through the software scheduling of the device, a series of fully automatic calibration actions such as coating - measuring film thickness - adjusting the height of the sample stage - adjusting the angle of the target head - adjusting the sputtering power can be realized and historical records can be generated. In this way, a molybdenum disilicide alloy with a stable structure can be obtained.

[0005] The object of the present invention can be achieved by the following technical solutions:

[0006] A magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer, comprising a sample loading cavity, a blanking cavity, an isolation valve and a process cavity which are sequentially distributed along a linear direction;

[0007] A transfer manipulator is installed inside the sample loading cavity, and the transfer manipulator is used to drive the wafer to transfer and move between the blanking cavity and the process cavity; an X-ray fluorescence spectrometer for dynamically detecting the thickness of the wafer film is installed on the sample loading cavity;

[0008] The blanking cavity cooperates with the transfer manipulator for storing the wafer;

[0009] The isolation valve is used to isolate the vacuum states of the blanking cavity and the process cavity;

[0010] A plurality of sputtering cathode mechanisms are arranged on the process cavity. The sputtering cathode mechanism includes an angle swing mechanism and a cathode target head arranged on the angle swing mechanism, and the angle swing mechanism is used to drive the cathode target head to swing;

[0011] A sample holder is installed at the bottom of the process cavity, and the sample holder is used to adjust the distance between the wafer and the cathode target head.

[0012] As a further scheme of the present invention: the angle swing mechanism includes:

[0013] A flange seat, which is fixedly installed on the process cavity housing;

[0014] A telescopic shaft, which penetrates through the flange seat and moves along the vertical direction;

[0015] A push rod, which is inclined, and the push rod is connected to the telescopic shaft through a first universal coupling;

[0016] A support plate, on the top of which a cathode target head is installed. A pin shaft for driving the support plate to rotate is arranged inside the support plate, and the pin shaft is driven to rotate by the push rod.

[0017] As a further scheme of the present invention: the angle swing mechanism further includes a hollow column, which is arranged at the center of the top of the flange seat. The hollow column penetrates through and is installed on a fixed seat and is connected to a second vacuum bellows, and the top of the second vacuum bellows is communicated with the cathode target head;

[0018] The support plate is rotatably connected to the fixed seat.

[0019] As a further solution of the present invention: a telescopic rod is disposed through the flange base, the telescopic rod moves along the vertical direction, a rotating rod is connected to the telescopic rod through a second universal coupling, the rotating rod is inclined, and the rotating rod passes through the fixing plate and is connected to the baffle, and the baffle cooperates with the cathode target head.

[0020] As a further solution of the present invention: a first wafer bracket is disposed at the top of the sample holder.

[0021] As a further solution of the present invention: a calibration mechanism is installed in the sample injection cavity, the calibration mechanism includes a first lead screw, a lifting block is threadedly connected to the first lead screw, a lifting shaft is fixedly installed on the lifting block, and a clamp is fixedly installed on the lifting shaft.

[0022] As a further solution of the present invention: an inclined portion is provided on the clamp, and the angle of the inclined portion is 120-135 degrees.

[0023] As a further solution of the present invention: a transfer manipulator is disposed inside the sample injection cavity, the transfer manipulator includes a bidirectional guide rail, a first slide plate is slidably connected to the bottom of the bidirectional guide rail, a first servo motor is fixedly installed on the first slide plate, an output shaft of the first servo motor is fixedly installed with a gear, and the gear is meshed with a rack disposed inside the bidirectional guide rail;

[0024] A second slide plate is slidably connected to the top of the bidirectional guide rail, and a hand support is fixedly installed on the second slide plate;

[0025] Both ends of the first slide plate are provided with traction ropes, and the traction ropes bypass the transmission wheels and are connected to the second slide plate.

[0026] As a further solution of the present invention: a lifting wafer bracket is disposed inside the sample placement cavity, the lifting wafer bracket includes a second servo motor, a second lead screw is fixedly installed on an output shaft of the second servo motor, the second lead screw rotates in the guide rail, a lifting frame is connected to the second lead screw through a slider, and a second wafer bracket is connected to the lifting frame through bolts.

[0027] As a further solution of the present invention: a working method of a magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer includes the following steps:

[0028] Step 1: An operator places a wafer on the lifting wafer bracket in the sample placement cavity and starts the vacuum pump group; after the vacuum in the cavity reaches the specified vacuum degree, the isolation valve is opened, and the transfer manipulator transports the wafer to the first wafer bracket in the process cavity, and the isolation valve is closed;

[0029] Step 2: After the vacuum degree in the sample injection cavity reaches the specified value, the first wafer carrier uses a lifting motor to send the wafer to a specified height and starts to rotate at a constant speed. Argon gas is introduced, and sputtering coating is performed on the wafer through the cathode target head in the process cavity. When it is necessary to adjust the angle of the cathode target head, the telescopic shaft is driven to stretch and contract, the push rod is driven to move through the first universal coupling, and then the cathode target head is driven to rotate around the pin shaft to achieve angle adjustment;

[0030] Step 3: After the coating is completed, the isolation valve is opened, and the transfer manipulator sends the wafer carrier back to the clamp under the X-ray fluorescence spectrometer for positioning. 8 points are equally divided along the diameter of the wafer. The transfer manipulator transports the wafer to the corresponding positions of each point, and the film thickness of each point is detected in turn and a detection report is automatically generated.

[0031] Advantages of the present invention:

[0032] By integrating the magnetron sputtering equipment with the X-ray fluorescence spectrometer, the thickness measurement of the spectrometer will not damage the wafer, greatly reducing the time for operators to verify the process;

[0033] The entire self-calibration process of the present invention is carried out in a vacuum state to avoid contaminating the wafer;

[0034] By co-sputtering molybdenum disilicide thin films, the film thickness of each wafer can be measured by the X-ray fluorescence spectrometer, compared with the expected film thickness, and then the output power of the sputtering power supply is adjusted to make the subsequent coating rate meet the expectation, so as to achieve the calibration of the sputtering rate. Similarly, the in-wafer uniformity can be calculated according to the measured film thickness at each position on the wafer, and then the film thickness uniformity is calibrated by adjusting the target head angle, realizing the full-automatic calibration of the sputtering rate and the film thickness uniformity, improving the yield of wafer coating and greatly improving the efficiency.

[0035] The present invention is equipped with a liftable sample stage and a cathode target head with adjustable angle, and a flexible mechanical structure. At the first time when the thickness data of the spectrometer is obtained, the gap from the target thickness is judged, and the cathode target head angle is automatically adjusted accordingly to correct the target thickness; the automation degree of the entire equipment is high, improving the work efficiency. Description of the Drawings

[0036] The present invention will be further described below with reference to the drawings.

[0037] Figure 1 is the overall structural schematic diagram of the present invention;

[0038] Figure 2 is the first perspective structural schematic diagram of the sputtering cathode mechanism of the present invention;

[0039] Figure 3 is the second perspective structural schematic diagram of the sputtering cathode mechanism of the present invention;

[0040] Figure 4 It is a schematic diagram of the overall structure of the calibration mechanism of the present invention;

[0041] Figure 5 It is a schematic diagram of the overall structure of the transfer manipulator of the present invention;

[0042] Figure 6 It is a schematic diagram of the internal structure of the transfer manipulator of the present invention;

[0043] Figure 7 It is a schematic diagram of the internal structure of the lofting cavity of the present invention;

[0044] Figure 8 It is a schematic diagram of the internal structure of the sample rack of the present invention;

[0045] Figure 9 It is the first test report of the present invention;

[0046] Figure 10 It is the second test report of the present invention;

[0047] Figure 11 It is a schematic diagram of the EDS test result of the present invention.

[0048] In the figure: 1. Sampling cavity;

[0049] 2. Lofting cavity;

[0050] 21. Second servo motor; 22. Second lead screw; 23. Guide rail; 24. Lifting frame; 25. Second wafer bracket;

[0051] 3. Process cavity;

[0052] 4. Transfer manipulator;

[0053] 41. Bidirectional guide rail; 42. First servo motor; 43. First slide plate; 44. Second slide plate; 45. Holder; 46. Driving wheel; 47. Gear; 48. Rack; 49. Traction rope;

[0054] 5. Calibration mechanism;

[0055] 51. First lead screw; 52. Lifting block; 53. Lifting shaft; 54. Clamp; 55. Tilt part;

[0056] 6. X-ray fluorescence spectrometer;

[0057] 7. Isolation valve;

[0058] 8. Sputtering cathode mechanism;

[0059] 811. Flange seat; 812. Driving motor; 813. First vacuum bellows; 814. Telescopic shaft; 815. First universal coupling; 816. Push rod; 817. Hollow column; 818. Mounting and fixing seat; 819. Second vacuum bellows; 8110. Support plate; 8111. Pin shaft;

[0060] 82. Cathode target head;

[0061] 831. Swing cylinder; 832. Coupling; 833. Telescopic rod; 834. Second universal coupling; 835. Rotating rod; 836. Baffle; 837. Fixed plate;

[0062] 9. Sample holder;

[0063] 91. Lifting mechanism; 92. Rotating motor; 93. Rotating shaft; 100. First wafer carrier. Detailed implementation mode

[0064] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts belong to the scope of protection of the present invention.

[0065] Please refer to Figure 1 As shown, the present invention is a magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer, which is linearly distributed, and the sample inlet cavity 1, the sample placement cavity 2, the isolation valve 7 and the process cavity 3 are sequentially distributed from left to right; the whole main body is formed by vacuum sealing connection;

[0066] Four sputtering cathode mechanisms 8 are arranged on the process cavity 3. The sputtering cathode mechanism 8 includes an angle swing mechanism and a cathode target head 82 arranged on the angle swing mechanism. The angle swing mechanism is used to drive the cathode target head 82 to swing for realizing film deposition.

[0067] Refer to Figures 2 - 3 As shown, the angle swing mechanism includes a flange seat 811. The flange seat 811 is fixedly installed on the shell of the process cavity 3 for connecting the vacuum cavity of the process cavity 3 to achieve ultra-high vacuum sealing and interconnecting with other structures; a hollow column 817 is fixedly installed at the center of the top of the flange seat 811. The hollow column 817 passes through the mounting and fixing seat 818 and is connected to the second vacuum bellows 819. The mounting and fixing seat 818 is connected to the hollow column 817 by clamping, which is convenient for disassembly. The top of the second vacuum bellows 819 is communicated with the cathode target head 82;

[0068] A support plate 8110 is rotatably connected to the installation and fixing base 818, and a cathode target head 82 is fixedly installed on the top of the support plate 8110.

[0069] A bracket is fixedly installed on one side of the flange seat 811, a driving motor 812 is fixedly installed on the bracket, the interior of the driving motor 812 is a through-type lead screw, a first vacuum bellows 813 is installed at the end of the through-type lead screw, a telescopic shaft 814 is installed at the end of the first vacuum bellows 813, the telescopic shaft 814 penetrates through the flange seat 811 and moves along the vertical direction, the telescopic shaft 814 is connected to a push rod 816 through a first universal coupling 815, the first universal coupling 815 can achieve a rotation of 0-90 degrees, the push rod 816 is obliquely arranged, and the end of the push rod 816 is connected to a pin shaft 8111.

[0070] Specifically, when the lead screw inside the driving motor 812 is pushed out or retracted, it drives the first vacuum bellows 813 to compress and expand, and then drives the telescopic shaft 814 connected thereto to perform an axial displacement. The axial displacement of the telescopic shaft 814 drives the push rod 816 to generate an angle through the first universal coupling 815, and then drives the support plate 8110 to rotate, and then drives the cathode target head 82 to move; at this time, the cathode target head 82 will rotate around the pin shaft 8111 to achieve an angle adjustment action.

[0071] A telescopic rod 833 is arranged through the flange seat 811, the telescopic rod 833 moves along the vertical direction, a rotating rod 835 is connected to the telescopic rod 833 through a second universal coupling 834, the rotating rod 835 is obliquely arranged, and the rotating rod 835 penetrates through a fixing plate 837 and is connected to a baffle 836, and the baffle 836 cooperates with the cathode target head 82; the bottom of the telescopic rod 833 is connected to a swing cylinder 831 through a coupling 832;

[0072] Specifically, when the swing cylinder 831 is started, it drives the telescopic rod 833 to move through the coupling 832, the telescopic rod 833 drives the rotating rod 835 to move through the second universal coupling 834, and then drives the baffle 836 to block the cathode target head 82, reducing environmental pollution.

[0073] Refer to Figures 5 - 6 As shown, a transfer manipulator 4 is installed inside the sample introduction cavity 1, and the transfer manipulator 4 is used to drive the wafer to be transferred and moved between the sample placement cavity 2 and the process cavity 3;

[0074] The transfer manipulator 4 includes a bidirectional guide rail 41. A first slide plate 43 is slidably connected to the bottom of the bidirectional guide rail 41. A first servo motor 42 is fixedly installed on the first slide plate 43. A gear 47 is fixedly installed on the output shaft of the first servo motor 42. The gear 47 is meshed with a rack 48 arranged inside the bidirectional guide rail 41. A second slide plate 44 is slidably connected to the top of the bidirectional guide rail 41. A hand support 45 is fixedly installed on the second slide plate 44. Traction ropes 49 are arranged at both ends of the first slide plate 43. The traction ropes 49 bypass a transmission wheel 46 and are connected to the second slide plate 44.

[0075] Specifically, start the first servo motor 42 to drive the gear 47 to rotate. The gear 47 is meshed with the rack 48, so that the first slide plate 43 moves left or right, and then drives the second slide plate 44 to move right or left through the two traction ropes 49, driving the hand support 45 to move.

[0076] An X-ray fluorescence spectrometer 6 for dynamically detecting the thickness of the wafer film is installed on the sample loading cavity 1. The sample placing cavity 2 cooperates with the transfer manipulator 4 for storing wafers. The isolation valve 7 is used to isolate the vacuum state of the sample placing cavity 2 and the process chamber 3. A sample holder 9 is installed at the bottom of the process chamber 3. The sample holder 9 is used to adjust the distance between the wafer and the cathode target head 82.

[0077] Refer to Figure 8 As shown, a lifting mechanism 91 is arranged inside the sample holder 9. The lifting mechanism 91 can be a cylinder or a servo motor and a lead screw for driving the lifting. A rotating motor 92 is arranged on the lifting mechanism 91. A rotating shaft 93 is fixedly installed on the output shaft of the rotating motor 92. A first wafer bracket 100 is installed on the rotating shaft 93. The sample holder 9 is used to adjust the distance between the wafer and the automatic angle-adjusting sputtering cathode 8 and the rotation speed of the wafer, and at the same time cooperate with the transfer manipulator 4 to realize the picking and placing actions of the wafer.

[0078] Refer to Figure 4 As shown, a calibration mechanism 5 is installed in the sample loading cavity 1. The calibration mechanism 5 includes a first lead screw 51. A lifting block 52 is threadedly connected to the first lead screw 51. The lifting block 52 penetrates through two guide rods. A lifting shaft 53 is fixedly installed on the lifting block 52. A clamp 54 is fixedly installed on the lifting shaft 53. Start the first lead screw 51 to rotate, drive the lifting block 52 to move, and then drive the lifting shaft 53 to move, and then drive the clamp 54 to lift.

[0079] An inclined portion 55 is arranged on the clamp 54. The angle of the inclined portion 55 is 120 - 135 degrees. It is used for automatic mechanical calibration during the falling process of the wafer, so that the wafer is circular and realizes the absolute positioning of the wafer.

[0080] Refer toFigure 7 As shown, a lifting wafer carrier is provided inside the lofting cavity 2. The lifting wafer carrier includes a second servo motor 21. A second lead screw 22 is fixedly installed on the output shaft of the second servo motor 21. The second lead screw 22 rotates in a guide rail 23. A lifting frame 24 is connected to the second lead screw 22 through a slider. The lifting frame 24 slides in the guide rail 23. A second wafer carrier 25 is bolted to the lifting frame 24.

[0081] First, the second wafer carrier 25 is fixedly installed on the lifting frame 24 by bolts, and then the lifting frame 24 is driven to lift and lower by the second servo motor 21 and the second lead screw 22.

[0082] Refer to Figures 1 - 8 As shown, a working method of a magnetron sputtering coating equipment integrated with an X-ray fluorescence spectrometer includes the following steps:

[0083] Step 1: An operator places a wafer on the lifting wafer carrier in the lofting cavity 2 and starts the vacuum pump group; after the vacuum in the cavity reaches the specified vacuum degree, the isolation valve 7 is opened, and the transfer manipulator 4 transports the wafer to the first wafer carrier 100 in the process cavity 3, and then the isolation valve 7 is closed;

[0084] Step 2: After the vacuum degree in the sample introduction cavity 1 reaches the specified value, the wafer carrier 9 sends the wafer to the specified height by a servo motor and starts to rotate at a constant speed. Process gas argon is introduced, and the gas flow rate is set to 15 sccm through the PC terminal. Two used cathodes are respectively installed with a pure silicon target and a pure molybdenum target. The cathode DC power supplies are respectively started. Among them, the molybdenum sputtering power is kept constant at 22 W, and the adjustable sputtering power T1 of silicon is preset to 120 W. The cathode baffle 836 and the sample stage baffle are opened to start coating, and the sputtering target thickness T1 is 0.16 um; when it is necessary to adjust the angle of the cathode target head 82, the telescopic shaft 814 is driven to stretch and contract, and the push rod 816 is driven to move through the first universal coupling 815, and then the cathode target head 82 is driven to rotate around the pin shaft 8111 to achieve angle adjustment;

[0085] Step 3: After the coating is completed, the isolation valve 7 is opened, and the transfer manipulator 4 transports the wafer back to the clamp 54 below the X-ray fluorescence spectrometer 6 for positioning; 8 points are equally divided along the diameter of the wafer, and the transfer manipulator 4 transports the wafer to the corresponding positions of each point, and the film thickness of each point is detected in turn and an inspection report is automatically generated, as Figure 9 shown:

[0086] Step 4: The system automatically reads the average value T2 in the inspection report ( Figure 9The value in the middle is 0.163 um. Substitute it and the target thickness T1 into the formula T1 / T2 = a * (P1 / P2), where a is the sputtering power adjustment coefficient (determined by the sputtering material, default is 1, confirmed by calibration). In this experiment, T1 is 0.16 um, T2 is 0.163 um, and P1 is 120 W. After calculation, the adjusted sputtering power P2 of silicon is 118 W, and the system automatically enters P2.

[0087] Step Five: The system retrieves the data of the thickness measured at 8 positions by the X-ray fluorescence spectrometer 14 and reads the film thickness uniformity ( Figure 9 the value in the middle is 3.37%). Determine whether it is higher than the set value (3%). If it is higher than the set value, enter the uniformity adjustment system: Read the point with the maximum thickness and determine its position on the wafer. Calculate the distance H between this point and the center of the wafer (the uniformity is optimal when the point with the maximum thickness is at one-fourth of the wafer diameter, that is, when H = 50 mm). Substitute it into the formula X = b * (H - 50), where X is the target head adjustment angle and b is the target head angle adjustment coefficient (default is 0.1, confirmed by calibration). In this experiment, H is 75 mm. Therefore, the system automatically rotates the target head by 2.5° through the drive motor 13 on the target head (rotate upward if X is positive, rotate downward if it is negative). The rotation method is as described above.

[0088] Step Six: The system generates historical data of the above adjustment parameters for the operator to view.

[0089] Repeat the above operation steps two and three of the uniformity to obtain the second-round sputtering thickness data and the test report. As Figure 10 shown, the average film thickness is 0.161 um, and the uniformity is 1.24%. By comparison, it can be seen that both the sputtering thickness and the uniformity have been significantly improved. And through the EDS test, it can be seen that, referring to Figure 11 shown, the atomic ratio of the alloy thin film is 1:2, and the film layer quality is very high.

[0090] The above has described a specific embodiment of the present invention in detail, but the content described is only a preferred embodiment of the present invention and cannot be considered as limiting the scope of implementation of the present invention. All equivalent changes and improvements made according to the scope of the present invention application should still fall within the scope covered by the patent of the present invention.

Claims

1. A magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer, comprising a sampling chamber (1), a sample placement chamber (2), an isolation valve (7) and a process chamber (3) which are sequentially distributed along a linear direction, characterized in that: A transport robot (4) is installed inside the sample injection cavity (1), and the transport robot (4) is used to drive the wafer to be transported and moved in the sample injection cavity (2) and the process cavity (3); an X-ray fluorescence spectrometer (6) is installed on the sample injection cavity (1) for dynamically detecting the thickness of the wafer film; The placement cavity (2) cooperates with the transfer robot (4) to store wafers; The isolation valve (7) is used to isolate the vacuum state of the sample chamber (2) and the process chamber (3); The process chamber (3) is provided with a plurality of sputtering cathode mechanisms (8), the sputtering cathode mechanisms (8) comprising an angle swing mechanism and a cathode target head (82) provided on the angle swing mechanism, the angle swing mechanism being used to drive the cathode target head (82) to swing; A sample rack (9) is installed at the bottom of the process chamber (3), and the sample rack (9) is used to adjust the distance between the wafer and the cathode target head (82); A flange seat (811), wherein the flange seat (811) is fixedly mounted on a shell of the process chamber (3); A telescopic shaft (814), wherein the telescopic shaft (814) passes through the flange seat (811) and moves in a vertical direction; A push rod (816), wherein the push rod (816) is arranged at an angle, and the push rod (816) is connected to the telescopic shaft (814) via a first universal coupling (815); A support plate (8110), wherein a cathode target head (82) is mounted on the top of the support plate (8110), and a pin shaft (8111) for driving the support plate (8110) to rotate is arranged inside the support plate (8110), and the pin shaft (8111) is driven to rotate by a push rod (816).

2. The magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer according to claim 1, characterized in that: The angle swing mechanism further comprises a hollow column (817), wherein the hollow column (817) is arranged at the top center of the flange seat (811), the hollow column (817) passes through the mounting fixing seat (818) and is connected to the second vacuum bellows (819), and the top of the second vacuum bellows (819) is in communication with the cathode target head (82); A support plate (8110) is rotatably connected to the mounting base (818).

3. The magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer according to claim 1, characterized in that: A telescopic rod (833) is provided through the flange seat (811), the telescopic rod (833) moves in a vertical direction, the telescopic rod (833) is connected to a rotating rod (835) via a second universal coupling (834), the rotating rod (835) is arranged at an angle, and the rotating rod (835) passes through a fixed plate (837) and is connected to a baffle (836), and the baffle (836) cooperates with the cathode target head (82).

4. The magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer according to claim 1, characterized in that: A first wafer bracket (100) is arranged on the top of the sample rack (9).

5. The magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer according to claim 1, characterized in that: A calibration mechanism (5) is installed in the injection chamber (1), and the calibration mechanism (5) comprises a first screw rod (51), a lifting block (52) is threadedly connected to the first screw rod (51), a lifting shaft (53) is fixedly installed on the lifting block (52), and a clamp (54) is fixedly installed on the lifting shaft (53).

6. The magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer according to claim 5, characterized in that: The clamp (54) is provided with an inclined portion (55), and the angle of the inclined portion (55) is 120-135 degrees.

7. The magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer according to claim 1, characterized in that: A transmission robot (4) is arranged inside the injection chamber (1), and the transmission robot (4) comprises a two-way guide rail (41), a first slide plate (43) is slidably connected to the bottom of the two-way guide rail (41), a first servo motor (42) is fixedly mounted on the first slide plate (43), a gear (47) is fixedly mounted on the output shaft of the first servo motor (42), and the gear (47) is meshingly connected with a rack (48) arranged inside the two-way guide rail (41); A second slide plate (44) is slidably connected to the top of the two-way guide rail (41), and a support handle (45) is fixedly mounted on the second slide plate (44); Both ends of the first slide plate (43) are provided with traction ropes (49), and the traction ropes (49) pass around the transmission wheel (46) and are connected to the second slide plate (44).

8. The magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer according to claim 1, characterized in that: A lifting wafer bracket is arranged inside the layout cavity (2), and the lifting wafer bracket comprises a second servo motor (21). A second screw rod (22) is fixedly mounted on an output shaft of the second servo motor (21), and the second screw rod (22) rotates in a guide rail (23). The second screw rod (22) is connected to a lifting frame (24) via a slider, and the lifting frame (24) is connected to a second wafer bracket (25) via bolts.

9. A working method of a magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer, characterized in that: The magnetron sputtering coating device integrated with an X-ray fluorescence spectrometer as claimed in claim 5 comprises the following steps: Step 1: An operator places a wafer on the lifting wafer holder of the sample chamber (2) and starts the vacuum pump group; after waiting for the vacuum in the chamber to reach a specified vacuum degree, the isolation valve (7) is opened, and the transfer robot (4) carries the wafer to the first wafer holder (100) of the process chamber (3), and the isolation valve (7) is closed; Step 2: After the vacuum degree in the injection chamber (1) reaches a specified value, the first wafer holder (100) delivers the wafer to a specified height through a lifting motor and starts to rotate at a uniform speed, introducing argon gas, and sputtering the wafer through a cathode target head (82) in the process chamber (3); when it is necessary to adjust the angle of the cathode target head (82), the telescopic shaft (814) is driven to extend and retract, and the push rod (816) is driven to move through the first universal coupling (815), thereby driving the cathode target head (82) to rotate around the pin shaft (8111) to achieve angle adjustment; Step 3: After the coating is completed, the isolation valve (7) is opened, and the transfer robot (4) sends the wafer holder back to the clamp (54) below the X-ray fluorescence spectrometer (6) for positioning; 8 points are divided equally along the diameter of the wafer, and the wafer holder is transported to the corresponding position of each point by the transfer robot (4), and the film thickness of each point is detected in turn and a test report is automatically generated.

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