A device

Abstract

The embodiment of the invention provides a device, which comprises a first baffle plate, a second baffle plate and a third baffle plate, the first end face of the supporting ring in the axial direction is connected with the first baffle, and the second end face of the supporting ring in the axial direction can be connected with a first to-be-deposited piece in a matched mode through a first matched connection part; and the second baffle is provided with a second ventilation opening, and the second baffle can be connected with the first to-be-deposited piece in a matched mode through the second matched connection. When the first to-be-deposited piece is connected with the supporting ring and the second baffle in a matched mode at the same time, the first baffle, the supporting ring, the first to-be-deposited piece and the second baffle jointly define a deposition cavity, and the to-be-deposited face of the first to-be-deposited piece forms part of the inner wall of the deposition cavity.

Description

Technical Field

[0001] The present invention relates to the technical field of chemical vapor deposition (CVD), and in particular to a device. Background Art

[0002] Silicon carbide (SiC) crystals are an important wide bandgap semiconductor material. Due to their excellent performance in high temperature, high frequency and high power fields, they are widely used in new energy vehicles, renewable energy, high-power electronic devices and radio frequency communications. There are various defects in the process of growing SiC crystals by physical vapor transport (PVT), including carbon encapsulation. Studies have shown that the generation of carbon encapsulation in crystals will induce the proliferation of dislocation defects and seriously deteriorate the quality of crystals. The generation of carbon encapsulation is mainly due to the fact that the gas phase substances generated by the decomposition and sublimation of the growth raw materials will react with the carbon in the inner wall of the graphite crucible during the process of being transported to the growth interface, and then loose and porous fine carbon particles will be formed on the inner wall. Further, they may be transported to the growth interface under the action of convection and captured into the interior of the crystal to form carbon encapsulation, thereby reducing the quality of the crystal. Therefore, treating the inner wall of the graphite crucible is beneficial to improving the quality of SiC crystals grown by the PVT method.

[0003] Based on this, it is hoped to provide a device that processes the graphite components that make up the graphite crucible and covers the surface of the graphite components with a dense metal compound film layer, such as nitrides, borides, and carbides, so as to isolate the reaction between the gas phase components and the inner wall of the graphite crucible, thereby significantly reducing the carbon encapsulation problem inside the crystal and improving the crystal quality. Summary of the invention

[0004] One or more embodiments of the present specification provide a device for use in a chemical vapor deposition process of one or more parts to be deposited, the device comprising: a first baffle plate, a first ventilation port being provided on the first baffle plate; a support ring, a first end face of the support ring along its axial direction being connected to the first baffle plate, and a second end face of the support ring along its axial direction being capable of being coupled to the first part to be deposited through a first coupling portion; a second baffle plate, a second ventilation port being provided on the second baffle plate, and the second baffle plate being capable of being coupled to the first part to be deposited through a second coupling portion; wherein, when the first part to be deposited is coupled to the support ring and the second baffle plate at the same time, the first baffle plate, the support ring, the first part to be deposited and the second baffle plate jointly enclose a deposition chamber, and the deposition surface of the first part to be deposited constitutes a portion of the inner wall of the deposition chamber.

[0005] In some embodiments, a flow balancing plate is disposed on the inner wall of the support ring, and the flow balancing plate is provided with a plurality of flow balancing holes along its axial direction.

[0006] In some embodiments, the ratio of the total cross-sectional area of ​​the plurality of flow balancing holes to the cross-sectional area of ​​the flow balancing plate is in the range of 0.2 to 0.5; and the cross section is perpendicular to the axial direction of the flow balancing plate.

[0007] In some embodiments, the device also includes a diverter plate, which is located between the first baffle plate and the support ring and connected to the support ring and the first baffle plate; the surface of the diverter plate located in the mixing chamber is an inclined surface, the inclined surface faces the flow equalizing plate, and there is an angle between the inclined surface and the flow equalizing plate, and the angle ranges from 20° to 60°.

[0008] In some embodiments, a plurality of second matching parts are provided on the second baffle plate; the device also includes a connecting ring, which is provided between the second baffle plate and the first deposition member, and one end of the connecting ring along its axial direction is connected to one of the plurality of second matching parts, and the other end of the connecting ring along its axial direction is connected to the first deposition member.

[0009] In some embodiments, the device also includes at least two groups of first heating components, and the at least two groups of first heating components are at least partially arranged outside the first object to be deposited along the axial direction of the first object to be deposited; the at least two groups of first heating components can be controlled individually for zoned heating of the first object to be deposited.

[0010] In some embodiments, the device also includes a support column, which is arranged in the center of the flow equalizing plate, one end of the support column is located in the deposition chamber, and the other end of the support column is located in the mixing chamber, and the end surface located in the mixing chamber is arc-shaped; the support column is provided with a plurality of support rods along its axial direction, and the support rods are constructed to place a second object to be deposited.

[0011] In some embodiments, the multiple support rods are retractable along the radial direction of the support column; a support member for supporting the second object to be deposited is provided on the multiple support rods, and a positioning slot is provided at one end of the multiple support rods away from the support column, and the height of the positioning slot is greater than the height of the support member.

[0012] In some embodiments, the distance between two adjacent support rods among the plurality of support rods is 10 mm to 100 mm.

[0013] In some embodiments, the device further includes a second heating component, which is disposed inside the support column and is configured to heat the support column.

[0014] In some embodiments, the apparatus further includes a heat insulation plate, wherein the heat insulation plate is at least partially located between the support column and the first object to be deposited, so as to separate the deposition chamber into a first deposition chamber and a second deposition chamber.

[0015] In some embodiments, the minimum distance from the support rod to the second matching portion is not less than 100 mm to 300 mm. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] This specification will be further described in the form of exemplary embodiments, which will be described in detail by the accompanying drawings. These embodiments are not restrictive, and in these embodiments, the same number represents the same structure, wherein:

[0017] Figure 1 is a schematic diagram of the structure of the device according to some embodiments of this specification;

[0018] Figure 2 is a top view of a baffle according to some embodiments of the present specification;

[0019] Figure 3 is a schematic diagram of the structure of the first baffle and the second baffle according to some embodiments of this specification;

[0020] Figure 4 is an exploded schematic diagram of a deposition chamber sidewall according to some embodiments of the present specification;

[0021] Figure 5 is a schematic diagram of the structure of a support rod and a second object to be deposited according to some embodiments of this specification;

[0022] Figure 6 It is a schematic diagram of the structure of the device shown in other embodiments of this specification.

[0023] In the figure:

[0024] 10. Device;

[0025] 110, first baffle; 1101, first annular groove; 111, first ventilation port;

[0026] 120, support ring; 1201, first annular protrusion; 121, first end surface; 122, second end surface; 1221, first matching portion;

[0027] 130, second baffle; 131, second ventilation port; 132, second matching portion; 1321, second annular groove;

[0028] 140, a first object to be deposited; 141, a surface to be deposited;

[0029] 150, flow balancing plate; 151, flow balancing hole;

[0030] 160, splitter plate; 161, inclined surface;

[0031] 170. connecting ring; 171. second annular protrusion;

[0032] 180. A first heating component;

[0033] 190, support column; 191, support rod; 1911, support member; 192, positioning slot;

[0034] 200, a second heating component;

[0035] 210. Heat insulation board;

[0036] 20. A second object to be deposited. DETAILED DESCRIPTION

[0037] The following is a brief introduction to the drawings required for describing the embodiments. The drawings do not represent all implementation methods.

[0038] The "system", "device", "unit" and / or "module" used herein are a method for distinguishing different components, elements, parts, portions or assemblies at different levels. However, if other words can achieve the same purpose, the words can be replaced by other expressions.

[0039] As shown in this specification, unless the context clearly indicates an exception, the words "a", "an", "a kind" and / or "the" do not refer to the singular, but also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.

[0040] When the operations performed in the embodiments of this specification are described in steps, unless otherwise specified, the order of the steps is interchangeable, steps may be omitted, and other steps may be included in the operation process.

[0041] Figure 1 is a schematic diagram of a structure of a device according to some embodiments of this specification. Figure 1 The following embodiments are understood, but the drawings are only for illustration of some of the embodiments and do not constitute a limitation of the embodiments.

[0042] Some embodiments of the present specification provide a device 10, which is applied to a chemical vapor deposition (CVD) process of one or more deposited parts. Figure 1As shown, the device 10 includes a first baffle 110 , a support ring 120 , and a second baffle 130 .

[0043] In some embodiments, a first ventilation port 111 is provided on the first baffle plate 110; a first end face 121 of the support ring 120 along its axial direction is connected to the first baffle plate 110, and a second end face 122 of the support ring 120 along its axial direction can be connected to the first matching portion ( Figure 1 The second baffle plate 130 is provided with a second ventilation port 131, and the second baffle plate 130 can pass through the second matching portion ( Figure 1 The first baffle plate 110, the support ring 120, the first member to be deposited 140 and the second baffle plate 130 are matched together to form a deposition chamber S1, and the deposition surface 141 of the first member to be deposited 140 constitutes a part of the inner wall of the deposition chamber S1.

[0044] Matching is a method for achieving mutual connection between two parts. In some embodiments, matching can include direct connection and indirect connection. Among them, direct connection can include bonding, threaded connection, clamping, etc. Indirect connection can include connection through other components.

[0045] The first baffle 110 is a plate-shaped member in the device 10. When the first baffle 110 is disposed at the bottom of the device, it can constitute the lower wall of the device 10. The material of the first baffle 110 may include graphite or other materials with similar physical properties and chemical stability. In some embodiments, the material of the first baffle 110 is graphite.

[0046] The first ventilation port 111 refers to an opening provided on the first baffle plate 110. Figure 1 As shown, the first gas exchange port 111 may be disposed at the center of the first baffle 110. In some embodiments, the first gas exchange port 111 may be used for the reaction gas to enter the deposition chamber S1.

[0047] The reaction gas refers to the gas required in the CVD process, for example, the reaction gas may include a metal source gas, a non-metal reaction gas or other gases required in the CVD process.

[0048] In some embodiments, the first gas exchange port 111 may be connected to an external gas supply device (not shown) to continuously provide reaction gas to the deposition chamber S1. It should be understood that the structural size (such as diameter) and structural shape of the first gas exchange port 111 may be set according to actual needs.

[0049] The support ring 120 is a component of the device 10 for supporting and fixing the first object to be deposited 140. In some embodiments, the material of the support ring 120 can be the same as the material of the first baffle 110, for example, graphite.

[0050] In some embodiments, the support ring 120 can be designed in a variety of structural shapes. For example, the support ring 120 can be in a circular ring shape or other shapes suitable for support.

[0051] The first end surface 121 is an end surface of the support ring 120 close to the first baffle 110. In some embodiments, the first end surface 121 can be connected to the first baffle 110 in a variety of ways. Exemplary connection methods include but are not limited to clamping, bonding, threaded connection, etc.

[0052] In some embodiments, the connection method between the first end surface 121 and the first baffle 110 is related to the structural form of the first end surface and the first baffle 110. For example, when the end surfaces of the first end surface 121 and the first baffle 110 opposite to each other are both planes, the first end surface 121 and the first baffle 110 can be connected by bonding or the like.

[0053] Figure 2 is a top view of a baffle according to some embodiments of the present specification; Figure 3 is a schematic diagram of the structure of the first baffle and the second baffle according to some embodiments of this specification; Figure 4 Schematic diagram of an exploded view of a deposition chamber sidewall according to some embodiments of the present specification.

[0054] In some embodiments, Figure 2-Figure 4 As shown, a plurality of first annular grooves 1101 with internal threads are provided at one end of the first baffle plate 110 close to the support ring 120, and at least one first annular protrusion 1201 with external threads is correspondingly provided on the first end face 121 of the support ring 120 along its axial direction. The first end face 121 can be connected to the first baffle plate 110 by threaded cooperation of at least one first annular protrusion 1201 of the first end face 121 and at least one first annular groove 1101 of the first baffle plate 110.

[0055] The setting position of at least one first annular protrusion 1201 with an external thread may correspond to the setting position of the second matching portion 132 on the second baffle 130 described later along the axial direction of the device 10 .

[0056] It should be noted that when there is an empty first annular groove 1101 on the first baffle plate 110, other components (such as the filling ring described later) can be selected to fill the first annular groove 1101 according to actual conditions to make the surface of the first baffle plate 110 as flat as possible to enhance the stability of the airflow transport process.

[0057] The second end surface 122 is an end surface of the support ring 120 away from the first baffle 110. In some embodiments, the second end surface 122 can be matched with the first object to be deposited 140 through the first matching portion 1221.

[0058] The first matching portion 1221 refers to a component used to connect the first to-be-deposited object 140 and the support ring 120. The structural shape of the first matching portion 1221 may include an annular groove or an annular protrusion structure (such as the first annular protrusion 1201), or other structural shapes with similar matching effects, etc. In some embodiments, the first matching portion 1221 may be disposed on the second end surface 122 of the support ring 120.

[0059] It should be understood that the second end surface 122 of the support ring 120 along its axial direction may also be directly connected to the first object to be deposited 140. Exemplary connection methods may include bonding and the like.

[0060] The first part to be deposited 140 refers to a workpiece on which a compound coating needs to be deposited during a CVD process. In some embodiments, the first part to be deposited 140 may be a graphite component constituting a graphite crucible. For example, the first part to be deposited 140 may be a graphite ring, and a plurality of graphite rings together constitute the side wall of the graphite crucible.

[0061] The coating refers to one or more layers of compounds deposited on the surface of the substrate. In some embodiments, the coating can be formed by chemically reacting the reaction gas entering through the first ventilation port 111 under high temperature conditions through a CVD process. For example, the coating can include a nitride coating, a carbide coating, a boride coating, or other high-density metal compound coatings. In some embodiments, the coating can be deposited on the surface to be deposited 141 of the first deposited part 140. For more information about the surface to be deposited, please refer to Figure 1 Instructions below.

[0062] In some embodiments, the end of the first object to be deposited 140 close to the support ring 120 may be correspondingly provided with a structure for mating with the first matching portion 1221. For example, when the first matching portion 1221 is provided with an annular groove structure at the radial distal end close to one end of the first object to be deposited 140, the end of the first object to be deposited 140 close to the first matching portion 1221 may be correspondingly provided with an annular protrusion structure.

[0063] In some embodiments, the first object to be deposited 140 may include one or more first sub-objects to be deposited, and the plurality of first sub-objects to be deposited are matched in pairs along their axial direction to form the first object to be deposited 140. Figure 1 , Figure 4As shown, the first component to be deposited 140 includes at least two first sub-components to be deposited, and each first sub-component to be deposited is provided with an annular protrusion structure at the radial distal end of one end close to the first baffle 110, and a corresponding annular groove structure is provided at the radial distal end of one end away from the first baffle 110. The two first sub-components to be deposited can constitute the first component to be deposited 140 by cooperating with the annular groove structure and the annular protrusion structure.

[0064] In some embodiments, a first sub-component to be deposited in the first component to be deposited 140 can serve as a support ring 120. It should be noted that the first component to be deposited 140 can also be any other feasible component, and the first coupling portion 1221 and the first component to be deposited 140 can also be coupled using any other feasible structure.

[0065] The second baffle 130 refers to a plate-shaped member located at the top of the device 10. The second baffle 130 is used to form the upper wall of the device 10. The material of the second baffle 130 may include graphite or other materials with similar physical properties and chemical stability. In some embodiments, the material of the second baffle 130 is graphite.

[0066] The second ventilation port 131 refers to an opening disposed on the second baffle 130. Figure 1 As shown, the second air exchange port 131 may be disposed at the center of the second baffle 130. In some embodiments, the second air exchange port 131 is connected to the exhaust assembly to form a channel for the reaction gas to exhaust the deposition chamber S1.

[0067] In some embodiments, the second air exchange port 131 may be connected to an external gas storage device (not shown) to collect the reaction gas exhausted from the deposition chamber S1. It should be understood that the structural size (such as diameter) and structural shape of the second air exchange port 131 may be set according to actual needs.

[0068] The second connecting portion 132 refers to a component used to connect the second baffle 130 and the first to-be-deposited object 140. In some embodiments, the second connecting portion 132 is disposed at one end of the second baffle 130 close to the first to-be-deposited object 140. In some embodiments, the second connecting portion 132 and the second baffle 130 may be an integrally formed structure or a split structure. For example, the second connecting portion 132 may be connected to the second baffle 130 by bonding, clamping, or the like.

[0069] In some embodiments, the second coupling portion 132 can be designed in various structural forms, including but not limited to an annular groove or an annular protrusion structure, etc. As an example only, the second coupling portion 132 can be a second annular groove 1321 with internal threads. For more information about the second coupling portion, please refer to the relevant description below.

[0070] The deposition chamber S1 refers to the chamber used for gas flow, chemical reaction and coating deposition in the CVD process. Figure 1 As shown, the deposition chamber S1 may be cylindrical, etc. In some embodiments, when the first object to be deposited 140 is coupled with the support ring 120 and the second baffle 130 at the same time, the first baffle 110, the support ring 120, the first object to be deposited 140 and the second baffle 130 together enclose the deposition chamber S1.

[0071] In some embodiments, the deposition surface 141 of the first part to be deposited 140 constitutes a portion of the inner wall of the deposition chamber S1, the first baffle 110 constitutes the bottom of the deposition chamber S1, the second baffle 130 constitutes the top of the deposition chamber S1, and the support ring 120 is located at the bottom layer of the deposition chamber S1, and is used to support and install the first part to be deposited 140.

[0072] The surface to be deposited 141 refers to the surface of the substrate covered by the coating during the chemical vapor deposition process. In some embodiments, the surface to be deposited 141 is part or all of the inner wall of the first object to be deposited 140 .

[0073] In some embodiments, after the reaction gas enters the deposition chamber S1 through the first gas exchange port 111 , it chemically reacts with the deposition surface 141 of the first object to be deposited 140 , thereby forming a desired coating on the deposition surface 141 of the first object to be deposited 140 .

[0074] In some embodiments of the present specification, the device uses a first baffle, a support ring and a second baffle. When the first deposition piece is matched with the support ring and the second baffle at the same time, the first baffle, the support ring, the first piece to be deposited and the second baffle together enclose a deposition chamber, and the surface to be deposited of the first piece to be deposited constitutes part of the inner wall of the deposition chamber, so that the surface to be deposited of the first piece to be deposited can be deposited with a dense metal compound coating, and the first piece to be deposited after the coating is deposited can be used as a component in a graphite crucible for crystal growth, which can significantly inhibit the chemical reaction process of the gas phase components on the graphite wall, reduce the carbon wrapping problem inside the crystal, and improve the purity and quality of the crystal. Moreover, the first deposition piece of the device is detachably connected to the support ring and the second baffle, so when the surface to be deposited of the first piece to be deposited completes the coating deposition, the next batch of first pieces to be deposited can be replaced, and the device has a high utilization rate and low cost. At the same time, multiple matching parts are set on the baffle to adapt to pieces to be deposited of different sizes to produce various types of graphite crucibles. In addition, other parts to be deposited can be deposited in the deposition chamber at the same time to meet the deposition requirements of various workpieces, and the utilization rate of the reaction gas is high, reducing costs.

[0075] In some embodiments, Figure 1 As shown, a flow balancing plate 150 is disposed on the inner wall of the support ring 120 , and the flow balancing plate 150 is provided with a plurality of flow balancing holes 151 along its axial direction.

[0076] The flow balancing plate 150 is a component used to evenly distribute the reaction gas entering the deposition chamber S1. In some embodiments, the flow balancing plate 150 may be made of graphite or other high temperature resistant and corrosion resistant materials.

[0077] In some embodiments, the flow balancing plate 150 is evenly provided with a plurality of flow balancing holes 151 along its axial direction as flow channels, so that the reaction gas can be evenly distributed when entering the deposition chamber S1. The structural size and distribution spacing of the flow balancing holes 151 can be preset by technicians according to requirements.

[0078] In some embodiments, the ratio of the total cross-sectional area of ​​the plurality of flow balancing holes 151 to the cross-sectional area of ​​the flow balancing plate 150 is in the range of 0.2 to 0.5. In some embodiments, the ratio of the total cross-sectional area of ​​the plurality of flow balancing holes 151 to the cross-sectional area of ​​the flow balancing plate 150 is in the range of 0.15 to 0.55. In some embodiments, the ratio of the total cross-sectional area of ​​the plurality of flow balancing holes 151 to the cross-sectional area of ​​the flow balancing plate 150 is in the range of 0.3 to 0.6. For example, the ratio of the total cross-sectional area of ​​the plurality of flow balancing holes 151 to the cross-sectional area of ​​the flow balancing plate 150 is 0.3. The cross section is perpendicular to the axial direction of the flow balancing plate 150. In some embodiments, the axial direction of the flow balancing plate 150 can be Figure 1 The X direction is shown in FIG.

[0079] In some embodiments of the present specification, by limiting the ratio of the total cross-sectional area of ​​the flow equalizing holes to the cross-sectional area of ​​the flow equalizing plate, the air permeability of the flow equalizing plate can be within a preferred range, thereby preventing the gas from directly entering the deposition chamber without mixing due to excessive air permeability of the flow equalizing plate.

[0080] In some embodiments, the flow equalizing plate 150 , the support ring 120 , and the first baffle 110 may together enclose a mixing chamber S2 .

[0081] The mixing chamber S2 refers to a space or area for mixing and pre-treating the reaction gas entering the deposition chamber S1. Figure 1 As shown, the mixing chamber S2 is located below the deposition chamber S1 and is connected to the deposition chamber S1 through the flow equalizing plate 150 .

[0082] In some embodiments, the flow balancing plate 150 can be connected to the inner wall of the support ring 120 in a variety of ways. For example, the edge of the flow balancing plate 150 can be a slot or a flange, and after the first end face 121 of the support ring 120 along its axial direction is connected to the first baffle 110, the edge of the flow balancing plate 150 can be connected to the upper edge of the support ring 120 in an embedded manner to jointly enclose the mixing chamber S2.

[0083] In some embodiments of the present specification, after the reaction gas enters the mixing chamber, there may be local turbulence or unevenness. By introducing a flow equalizer, the speed and direction of the gas flow can be effectively balanced, the impact of turbulence on the deposition chamber can be reduced, and the gas flow rate and component concentration of the reaction gas entering the deposition chamber can reach an ideal uniform state, avoiding local oversaturation, thereby improving the quality of the deposited coating.

[0084] In some embodiments, Figure 1 As shown, the device 10 further includes a diverter plate 160, which is located between the first baffle plate 110 and the support ring 120, and is connected to the support ring 120 and the first baffle plate 110. The surface of the diverter plate 160 located in the mixing chamber S2 is an inclined surface 161, which faces the equalizing plate 150, and there is an angle between the inclined surface 161 and the equalizing plate 150, and the angle ranges from 20° to 60°. For more information about the mixing chamber, please refer to the relevant description in the previous text.

[0085] The flow divider 160 is a component used to disperse and guide the reaction gas. In some embodiments, the material of the flow divider 160 can be consistent with that of the flow equalizing plate 150. In some embodiments, the flow divider 160 can be used to guide and divert the reaction gas entering the mixing chamber S2 to avoid turbulence at the first ventilation port 111, which leads to local enrichment.

[0086] In some embodiments, the diverter plate 160 can be connected to the support ring 120 and the first baffle plate 110 by bonding, clamping, etc. Figure 1 As shown, the splitter plate 160 is disposed in the mixing chamber S2, and its outer wall is in contact with the inner wall of the mixing chamber S2.

[0087] The inclined surface 161 is the end surface of the flow divider 160 for guiding and diverting the reaction gas. In some embodiments, the inclined surface 161 faces the flow equalizing plate 150 and is used to initially disperse and guide the reaction gas entering the mixing chamber S2 so that it can enter the deposition chamber S1 more smoothly through the flow equalizing plate 150.

[0088] In some embodiments, there is an angle α between the inclined surface 161 and the current equalizing plate 150, and the angle α may range from 20° to 60°. In some embodiments, the angle α may also range from 20° to 50°. In some embodiments, the angle α may also range from 30° to 45°. For example, α=40°.

[0089] In some embodiments of the present specification, a diverter plate is provided, and the diverter plate has an inclined surface. When the reaction gas enters the mixing chamber from the first ventilation port, the inclined surface of the diverter plate can disperse the airflow to both sides of the mixing chamber to form a uniform flow field, thereby avoiding turbulence of the airflow at the first ventilation port and causing local enrichment, thereby ensuring the stability and consistency of the airflow on both sides of the mixing chamber.

[0090] In some embodiments, Figure 3-Figure 4 As shown, a plurality of second matching portions 132 are disposed on the second baffle 130. The device 10 further includes a connecting ring 170, which is disposed between the second baffle 130 and the first deposition member 140, wherein one end of the connecting ring 170 along its axial direction is connected to one of the plurality of second matching portions 132, and the other end of the connecting ring 170 along its axial direction is connected to the first deposition member 140.

[0091] In some embodiments, the second coupling portion 132 may be an annular groove or an annular protrusion with threads, and a plurality of second coupling portions 132 may be coaxially arranged on the second baffle 130 around the axial direction thereof. Exemplary connection methods include snap connection, threaded connection, etc. For more information about the second coupling portion, please refer to the relevant description in the above text.

[0092] The connecting ring 170 is a component used to connect the first deposition member 140 and the second matching portion 132. The material of the connecting ring 170 is the same as that of the second baffle 130, such as graphite.

[0093] In some embodiments, the structural shape of the connecting ring 170 can be determined according to the structural shapes of the second baffle 130 and the first object to be deposited 140. As an example only, Figure 4 As shown, when the end of the first object to be deposited 140 close to the connecting ring 170 is set as an annular groove, the end of the connecting ring 170 close to the first object to be deposited 140 can be set as an annular protrusion. When the end of the second matching portion 132 on the second baffle 130 close to the connecting ring 170 is set as an annular groove, the end of the connecting ring 170 close to the second baffle 130 is set as an annular protrusion. The setting position of the annular protrusion is opposite to the setting position of the annular groove along the axial direction of the device.

[0094] In some embodiments, Figure 4 As shown, when a plurality of second matching parts 132 are provided on the second baffle 130, and the second matching part 132 is a second annular groove 1321 with an internal thread, a second annular protrusion 171 with an external thread is correspondingly provided at one end of the connecting ring 170 along its axial direction. The connecting ring 170 can be connected to one of the plurality of second matching parts 132 by threaded cooperation between the second annular protrusion 170 of the connecting ring 170 and a second annular groove 1321 among the plurality of second matching parts 132.

[0095] In some embodiments, the other end of the connecting ring 170 along its axial direction may be connected to the first deposition member 140 in a manner similar to that described above, which will not be described in detail herein.

[0096] In some embodiments of the present specification, by setting a connecting ring to connect it with the second matching part and the first deposition piece, not only can the airtightness of the deposition chamber be ensured, but the connecting ring can also be adaptively adjusted according to the structural shape of the first deposition piece and the second baffle. For example, when the structural shapes of the two end faces of the multiple first deposition sub-pieces constituting the first deposition piece along their axial direction are different, by setting a connecting ring, there is no need to design a new baffle structure. At this time, the structural shapes of the first baffle and the second baffle are consistent, which is more conducive to production and promotion. Furthermore, multiple second matching parts are provided on the second baffle, and the multiple second matching parts can be used to install first pieces to be deposited with different diameter specifications, thereby enhancing the flexibility of the device to meet the deposition requirements of various workpieces.

[0097] In some embodiments, the device 10 further includes a filling ring (not shown in the figure), which can be used to fill the remaining second coupling parts 132 in the plurality of second coupling parts 132 when one of the plurality of second coupling parts 132 is connected to the connecting ring 170 .

[0098] The filling ring refers to an annular component used to fill the second matching portion 132. The material of the filling ring may include graphite, or other materials that can fill the second matching portion 132. In some embodiments, when the second matching portion 132 is a second annular groove 1321, the filling ring may be disposed in the vacant second annular groove 1321, so that the surface of the second baffle 130 is as flat as possible, so as to enhance the stability of the airflow transport process.

[0099] It should be noted that whether to provide a filling ring on the second matching portion 132 can be determined according to actual conditions. For example, when the second matching portion 132 is not an annular groove, there is no need to provide a filling ring.

[0100] In some embodiments of the present specification, a filling ring is arranged in the vacant second annular groove to make the surface of the second baffle as flat as possible, thereby avoiding the airflow gathering on the inner surface of the second baffle, enhancing the stability and smoothness of the airflow transport process, thereby facilitating the formation of a more uniform deposition surface and improving the deposition quality.

[0101] In some embodiments, Figure 1 As shown, the device 10 further includes at least two groups of first heating components 180, which are at least partially arranged outside the first object to be deposited 140 along the axial direction of the first object to be deposited 140. The at least two groups of first heating components 180 can be controlled separately to heat the first object to be deposited 140 in different areas.

[0102] The first heating assembly 180 is a component for adjusting the temperature in the deposition chamber S1 , and may include a heating rod, a heating coil, or the like.

[0103] In some embodiments, the number of the first heating components 180 is not limited and may include two or more groups. Figure 1 As shown, the device 10 includes two groups of first heating components 180, and the two groups of first heating components 180 are sequentially arranged along the axial direction of the device around the first baffle 110, the support ring 120, and the outside of the first object to be deposited 140. The heating areas of each group of first heating components 180 may be the same or different. For example, one of the two groups of first heating components 180 may be arranged around the axial direction of the first object to be deposited 140 and outside the first object to be deposited 140, and the other group may be arranged around the axial direction of the first object to be deposited 140 (or the device 10) and outside the first baffle 110 and the support ring 120.

[0104] In some embodiments, the first heating component 180 can be disposed outside the device 10 in a variety of ways. For example, the first heating component 180 is a heating coil, and the heating coil can be directly disposed on the outer wall of the device 10.

[0105] In some embodiments, the number and arrangement of the first heating components 180 can be set according to actual needs. For example, at least two groups of first heating components 180 can be set outside the first object to be deposited 140 to obtain first objects to be deposited 140 with different deposition thicknesses.

[0106] In some embodiments, technicians can perform zone heating on the first object to be deposited 140 by controlling the heating power of the first heating components 180 located in different areas outside the first object to be deposited 140, so as to achieve precise adjustment and gradient distribution of the coating thickness. The heating power of each group of first heating components 180 can be the same or different, and can be set according to actual needs.

[0107] For example, a technician or the control system of the device 10 can control a group of first heating components 180 to maintain a higher temperature at one end of the deposition chamber S1, so that the gas movement in the area is more intense and the reaction rate of the reaction gas is faster, thereby having a faster deposition rate and forming a thicker coating. At the same time, a technician or the control system of the device 10 can control another group of first heating components 180 to maintain a lower temperature at the other end of the deposition chamber S1, so that the gas movement rate in the area is lower, the reaction rate of the reaction gas is reduced, thereby having a slower deposition rate and forming a thinner coating. It can be understood that by gradually reducing the heating power of the above-mentioned at least two groups of first heating components 180 from the bottom of the deposition chamber to the top of the deposition chamber, a gradient distribution of the coating thickness can be achieved in which the coating thickness gradually decreases from the bottom of the deposition chamber to the top.

[0108] In some embodiments of the present specification, since the reaction rate between the reaction gas and the elements on the surface of the deposition object and the deposition rate are closely related to the ambient temperature, at least two groups of first heating components that can be individually controlled are arranged outside the device to perform zone heating on the first object to be deposited, thereby forming different temperature gradients in the deposition chamber, thereby achieving different deposition requirements, while also improving the material utilization rate of the device, reducing material consumption and deposition time, and saving production costs.

[0109] In some embodiments, Figure 1 As shown, the device 10 further includes a support column 190, which is disposed in the center of the flow equalizing plate 150, one end of the support column 190 is located in the deposition chamber S1, and the other end of the support column 190 is located in the mixing chamber S2, and the end surface located in the mixing chamber S2 is in an arc shape. The support column 190 is provided with a plurality of support rods 191 along its axial direction, and the support rods 191 are configured to place the second object 20 to be deposited.

[0110] The support column 190 refers to a component that supports, fixes and stabilizes the deposition chamber S1. The support column 190 can be designed in a variety of structural shapes. For example, the support column 190 can be a cylindrical structure, etc. In some embodiments, the material of the support column 190 can include graphite, or other materials with excellent high temperature resistance and chemical corrosion resistance.

[0111] In some embodiments, the support column 190 is disposed in the center of the flow equalizing plate 150 to support the first object to be deposited 140 and cooperate with other components (such as the first baffle, the second baffle, and the connecting ring) to form a stable cavity structure. It should be understood that the structural dimensions of the support column 190 can be determined according to the structural dimensions of the deposition cavity S1 and the coating deposition requirements.

[0112] In some embodiments, one end of the support column 190 is located in the deposition chamber S1, and can be used to set the support rod 191 and support the second object to be deposited 20; the other end of the support column 190 extends through the flow plate 150 to the mixing chamber S2, and the end surface located in the mixing chamber S2 is in an arc shape. Figure 1 As shown, the arc-shaped end face of the support column 190 is arranged opposite to the first ventilation port 111. Therefore, when the reaction gas enters the mixing chamber S2 through the first ventilation port 111, the arc-shaped end face can guide and divert it so that it can flow smoothly to the flow equalizing plate 150. At the same time, it can also reduce the resistance of the airflow when passing through the flow equalizing plate 150, avoid the formation of turbulence or gas stagnation area near the support column 190, thereby optimizing the state of the gas entering the deposition chamber S1.

[0113] In some embodiments, the sidewall of the support column 190 is provided with a plurality of support rods 191 equidistantly distributed axially, for placing a plurality of second objects to be deposited 20 .

[0114] The support rod 191 refers to a component for placing the second object to be deposited 20. The material of the support rod 191 is the same as that of the support column 190, including but not limited to graphite. In some embodiments, the end of the support rod 191 close to the support column 190 can be designed as a cylindrical shape, a rod shape, etc., and the end of the support rod 191 away from the support column 190 can be designed as an annular structure (whose cross section is circular or rectangular, etc.), so as to provide a stable contact surface for the second object to be deposited 20, so as to better support the second object to be deposited 20. In some embodiments, the end of the support member 1911 away from the support column 190 can also be designed as a cross shape, a Y shape, etc.

[0115] In some embodiments, the support rod 191 can be fixed to the support column 190 in a variety of ways. For example, exemplary fixing methods include but are not limited to bonding, sleeve connection, etc.

[0116] The second object to be deposited 20 refers to another workpiece on which a compound coating needs to be deposited during the CVD process. The material of the second object to be deposited 20 is not limited and can be the same or different from the first object to be deposited 140. In some embodiments, the second object to be deposited 20 can be a graphite ring or the like.

[0117] In some embodiments of the present specification, by providing a support column and designing its end face in the mixing chamber to be arc-shaped, the gas entering the mixing chamber can be further guided and diverted so that it can flow smoothly to the flow equalizer plate, and at the same time, the resistance of the gas flow passing through the flow equalizer plate can be reduced, and turbulence or gas stagnation areas can be avoided near the support column, thereby optimizing the state of the gas entering the deposition chamber. At the same time, multiple support rods are provided along the axial direction of one end of the support column located in the deposition chamber, which can be used to deposit multiple second objects to be deposited at the same time, thereby improving the practicality of the device.

[0118] Figure 5 It is a schematic diagram of the structure of the support rod and the second object to be deposited according to some embodiments of the present specification.

[0119] In some embodiments, Figure 5 As shown, the plurality of support rods 191 are retractable along the radial direction of the support column 190. The plurality of support rods 191 are provided with support members 1911 for supporting the second object to be deposited 20, and one end of the plurality of support rods 191 away from the support column 190 is provided with a positioning slot 192, and the height of the positioning slot 192 is greater than the height of the support member 1911.

[0120] In some embodiments, the radial extension and retraction of the plurality of support rods 191 along the support column 190 can be realized through various structural forms. For example, the support rods 191 can be telescopic rods that can extend and retract the inner rod relative to the outer tube by locking and unlocking the locking mechanism. The plurality of support rods 191 can be extended and retracted along the radial direction of the support column 190, so that the support rods 191 can adapt to the structural requirements of the deposition chamber S1, and at the same time, different sizes of second objects to be deposited 20 can be set to meet various requirements.

[0121] The support member 1911 is a component of the support rod 191 for supporting the second object to be deposited 20. In some embodiments, the support member 1911 can be designed as an arc-shaped protrusion, so as to achieve stable support for the second object to be deposited 20 while reducing the contact area with the second object to be deposited 20, ensuring the deposition area of ​​the second object to be deposited 20, and achieving full coverage of the coating on the second object to be deposited 20 as much as possible.

[0122] The positioning slot 192 is a component of the support rod 191 used to constrain the placement position of the second object to be deposited 20. In some embodiments, the positioning slot 192 can be designed in various structural shapes such as a rod shape, a block shape, etc.

[0123] In some embodiments, the positioning slot 192 can be disposed at the top end of the support rod 191 away from the support column 190 to constrain the placement of the second object to be deposited 20. In order to prevent the second object to be deposited 20 from shifting, tilting or sliding on the support member 1911, the height of the positioning slot 192 is greater than the height of the support member 1911.

[0124] It should be understood that the height of the support member 1911 and the positioning slot 192 can be set by a technician based on demand, ensuring that the height of the support member 1911 is lower than the height of the positioning slot 192 .

[0125] It should be noted that the structural shapes and setting positions of the support members 1911 and the positioning slots 192 on the multiple support rods 191 correspond to each other in the axial direction of the support column 190, so as to ensure that the contour of the second part to be deposited 20 placed on the support members 1911 is a straight line in the axial direction of the support column 190, avoiding affecting the airflow in the deposition chamber S1, thereby ensuring the coating quality of the part to be deposited.

[0126] In some embodiments of the present specification, by arranging support members on multiple support rods, a certain distance can be left between the second member to be deposited and the support rods, ensuring that the coating can cover the bottom of the second member to be deposited, while avoiding the coating deposition blind area caused by the excessive contact surface of the support rods, thereby improving the integrity and uniformity of the coating. In addition, by setting the height of the support member to be lower than the positioning slot, on the one hand, the displacement or tilting of the second member to be deposited during the deposition process can be prevented, and on the other hand, the interference of the positioning slot on the coating deposition process can be reduced, so as to further improve the uniformity and quality of the coating thickness.

[0127] In some embodiments, the distance between two adjacent support rods 191 in the plurality of support rods 191 is 10 mm to 100 mm. In some embodiments, the distance between two adjacent support rods 191 in the plurality of support rods 191 can also be 10 mm to 80 mm. In some embodiments, the distance between two adjacent support rods 191 in the plurality of support rods 191 can also be 40 mm to 60 mm. For example, 50 mm.

[0128] In some embodiments of the present specification, if the distance between two adjacent support rods among the multiple support rods is too small, the airflow is easily obstructed, resulting in turbulence or dead corners around the support rods; if the distance is too large, the airflow is unevenly distributed, resulting in excessive or low gas concentration, thereby affecting the consistency of the coating. By reasonably distributing the distance between adjacent support rods, the airflow can evenly pass through the space between the multiple support rods, which can effectively ensure that each part of the second to-be-deposited object is subjected to uniform gas flow, thereby improving the coating quality.

[0129] Figure 6 It is a schematic diagram of the structure of the device shown in other embodiments of this specification.

[0130] In some embodiments, Figure 6 As shown, the device 10 further includes a second heating component 200 , which is disposed inside the support column 190 and is configured to heat the support column 190 .

[0131] The second heating assembly 200 refers to an assembly for heating the support column 190. For example, the second heating assembly 200 may include, but is not limited to, a heating coil, etc. In some embodiments, the device 10 includes at least one set of second heating assemblies 200, and the number of the second heating assemblies 200 may be preset by a technician.

[0132] In some embodiments, Figure 6 As shown, the interior of the support column 190 is a hollow structure, and the second heating assembly 200 can be disposed inside the support column 190 .

[0133] In some embodiments, the temperature of the second heating assembly 200 can be independently controlled, and technicians can adjust the local or overall temperature of the support column 190 as needed to control the temperature gradient of the gas in the deposition chamber S1.

[0134] In some embodiments of the present specification, the temperature stability of the support column directly affects the gas flow state in the mixing chamber and the deposition chamber. By setting the second heating component inside the support column, the temperature of the support column can be accurately controlled to avoid local temperature drop caused by the contact of the airflow with the cold surface, thereby improving the stability of the reaction gas.

[0135] In some embodiments, Figure 6 As shown, the device 10 further includes a heat insulation plate 210 , which is at least partially located between the support column 190 and the first object to be deposited 140 , so as to separate the deposition chamber S1 into a first deposition chamber S11 and a second deposition chamber S12 .

[0136] The heat insulation board 210 is a component used for heat insulation of the device 10. The material of the heat insulation board 210 includes but is not limited to graphite felt, or other materials that can block heat transfer.

[0137] In some embodiments, the heat shield 210 is an annular member and is at least partially disposed in the deposition chamber S1 between the support column 190 and the first object to be deposited 140 to separate the deposition chamber S1 into a first deposition chamber S11 and a second deposition chamber S12 .

[0138] It should be noted that the number and arrangement of the heat insulation boards 210 are not limited and can be determined according to actual conditions.

[0139] The first deposition chamber S11 refers to a portion located in the center of the deposition chamber S1 separated by the heat insulation plate 210. In some embodiments, the heat insulation plate 210 encloses the graphite column 180 and the second object to be deposited 20 in the first deposition chamber S11.

[0140] The second deposition chamber S12 is a portion located outside the deposition chamber S1 separated by the heat shield 210. In some embodiments, the support ring 120, the second baffle 130, the first object to be deposited 140, the flow equalizing plate 150, the connecting ring 170 and the heat shield 210 together enclose the second deposition chamber S12.

[0141] In some embodiments, the temperatures in the second deposition chamber S12 and the first deposition chamber S11 can be adjusted separately by the first heating assembly 180 and the second heating assembly 200, respectively, to meet different deposition requirements while improving the deposition efficiency and uniformity of the coating.

[0142] In some embodiments, Figure 6 As shown, when the heat insulation plate 210 is replaced in the deposition chamber S1, at least two second ventilation ports 131 may be provided on the second baffle plate 130, and the second ventilation ports 131 are provided corresponding to the first deposition chamber S11 and the second deposition chamber S12. For example, one second ventilation port 131 is provided at the center of the second baffle plate 130, and is connected to the first deposition chamber S11; at least one second ventilation port 131 may be evenly distributed on the second baffle plate 130 corresponding to the second deposition chamber S12, and is connected to the second deposition chamber S12. By providing at least two second ventilation ports 131, the airflow in the first deposition chamber S11 and the second deposition chamber S12 can be independently adjusted and discharged, avoiding mutual interference and heat exchange between the airflows in the first deposition chamber and the second deposition chamber, thereby realizing independent deposition of the first to-be-deposited object 140 and the second to-be-deposited object 20.

[0143] In some embodiments of the present specification, by providing a heat insulation plate in the deposition chamber to separate the deposition chamber into a first deposition chamber and a second deposition chamber, it is possible to avoid the gases in the two deposition chambers from flowing mutually for heat exchange, thereby reducing the impact on the second deposition chamber when the first heating component is used to heat the first deposition chamber in different zones, so as to ensure the deposition effect and deposition quality of the two deposition chambers. In addition, the two deposition chambers are temperature-controlled by independent heating components, so that they can meet the requirements of different deposition conditions, further improving the consistency and functionality of the coating.

[0144] In some embodiments, the minimum distance from the support rod 191 to the second coupling portion 132 is not less than 100 mm to 300 mm. In some embodiments, the minimum distance from the support rod 191 to the second coupling portion 132 may also be not less than 100 mm to 200 mm. In some embodiments, the minimum distance from the support rod 191 to the second coupling portion 132 may also be not less than 150 mm to 180 mm. For example, 150 mm. Furthermore, by limiting the minimum distance from the support rod 191 to the second coupling portion 132 so that it is within the preferred range, the influence of the zone heating on the second part to be deposited 20 placed on the support rod 191 can also be reduced, so as to further ensure the deposition effect and deposition quality of the second part to be deposited.

[0145] Furthermore, certain features, structures or characteristics in one or more embodiments of this specification may be appropriately combined.

[0146] In some embodiments, numbers describing the number of components and attributes are used. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise specified, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may change according to the required features of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of this specification are approximate values, in specific embodiments, the setting of such numerical values ​​is as accurate as possible within the feasible range.

[0147] Each patent, patent application, patent application publication, and other materials, such as articles, books, specifications, publications, documents, etc., cited in this specification are hereby incorporated by reference in their entirety. Except for application history documents that are inconsistent with or conflicting with the contents of this specification, documents that limit the broadest scope of the claims of this specification (currently or later attached to this specification) are also excluded. It should be noted that if the descriptions, definitions, and / or use of terms in the materials attached to this specification are inconsistent or conflicting with the contents described in this specification, the descriptions, definitions, and / or use of terms in this specification shall prevail.

Claims

1. A device for chemical vapor deposition of one or more parts to be deposited, characterized in that: The device comprises: a first baffle plate, wherein a first ventilation port is formed on the first baffle plate; A support ring, wherein a first end surface of the support ring along the axial direction is connected to the first baffle, and a second end surface of the support ring along the axial direction can be matched with the first object to be deposited through a first matching portion; A second baffle plate, wherein a second ventilation port is provided on the second baffle plate, and the second baffle plate can be matched with the first object to be deposited through a second matching portion; Among them, when the first part to be deposited is matched with the support ring and the second baffle at the same time, the first baffle, the support ring, the first part to be deposited and the second baffle together enclose a deposition cavity, and the deposition surface of the first part to be deposited constitutes part of the inner wall of the deposition cavity.

2. The device according to claim 1, characterized in that The inner wall of the support ring is provided with a flow balancing plate, and the flow balancing plate is provided with a plurality of flow balancing holes along its axial direction.

3. The device according to claim 2, characterized in that The ratio of the total cross-sectional area of ​​the plurality of flow balancing holes to the cross-sectional area of ​​the flow balancing plate is in the range of 0.2 to 0.5; the cross section is perpendicular to the axial direction of the flow balancing plate.

4. The device according to claim 2 or 3, characterized in that The device further comprises a diverter plate, the diverter plate being located between the first baffle plate and the support ring and connected to the support ring and the first baffle plate; The surface of the flow divider plate in the mixing chamber is an inclined surface, the inclined surface faces the flow equalizing plate, and there is an angle between the inclined surface and the flow equalizing plate, and the angle ranges from 20° to 60°.

5. The device according to claim 1, characterized in that The second baffle is provided with a plurality of the second matching portions; The device also includes a connecting ring, which is arranged between the second baffle and the first deposition member, wherein one axial end of the connecting ring is connected to one of the plurality of second matching portions, and the other axial end of the connecting ring is connected to the first deposition member.

6. The device according to claim 1, characterized in that The device further comprises at least two groups of first heating components, wherein the at least two groups of first heating components are at least partially disposed outside the first object to be deposited along the axial direction of the first object to be deposited; The at least two groups of first heating components can be controlled individually to perform zone-wise heating on the first object to be deposited.

7. The device according to claim 1, characterized in that The device further comprises a support column, which is arranged in the center of the flow balancing plate, one end of which is located in the deposition chamber, and the other end of which is located in the mixing chamber, and the end surface located in the mixing chamber is in an arc shape; The support column is provided with a plurality of support rods along its axial direction, and the support rods are configured to place the second object to be deposited.

8. The device according to claim 7, characterized in that The multiple support rods are retractable along the radial direction of the support column; a support member for supporting the second object to be deposited is arranged on the multiple support rods, and a positioning groove is arranged at one end of the multiple support rods away from the support column, and the height of the positioning groove is greater than the height of the support member.

9. The device according to claim 8, characterized in that The distance between two adjacent support rods among the plurality of support rods is 10 mm to 100 mm.

10. The device according to claim 7, characterized in that The device also includes a second heating component, which is disposed inside the support column and is configured to heat the support column.

11. The device according to claim 10, characterized in that The device further includes a heat insulation plate, which is at least partially located between the support column and the first object to be deposited, so as to separate the deposition chamber into a first deposition chamber and a second deposition chamber.

12. The device according to claim 10, characterized in that The minimum distance from the support rod to the second matching portion is not less than 100 mm to 300 mm.

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