Process chamber and semiconductor equipment

Abstract

The invention discloses a process chamber and semiconductor equipment, the process chamber is used for processing a substrate, the process chamber comprises a chamber body, and the process chamber also comprises a spraying assembly arranged above the chamber body; the heating assembly is arranged below the chamber body; and the mounting assembly is arranged in the cavity body, the mounting assembly comprises a plurality of mounting positions, and the plurality of mounting positions are used for placing the plurality of substrates. According to the invention, the spraying assembly and the heating assembly are arranged in the chamber body to ensure that the temperature distribution in the chamber is more uniform, so that the substrate processing quality can be ensured, and meanwhile, the effect of processing a plurality of substrates in the same chamber is achieved through the mounting assembly comprising a plurality of mounting positions, so that the substrate processing efficiency is improved. Therefore, the overall substrate processing efficiency is improved, the overall process time is shortened, and the process productivity is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a process chamber and semiconductor equipment. Background Art

[0002] For some semiconductor processing equipment, such as PECVD equipment (plasma enhanced chemical vapor deposition equipment), when preheating the wafer substrate, it is generally carried out in PM (prevention maintenance, for the machine or chamber) or LL (Load Lock, a single-disc vacuum transfer system). Whether preheating is performed in PM or LL, it will affect the final production capacity. For example, when preheating in LL, although LL can use two reaction chambers, in fact, each reaction chamber can only preheat one wafer substrate, which has little effect on the overall process processing time, and cannot significantly improve the final production capacity. Therefore, for those skilled in the art, improving the substrate processing capacity is a problem that needs to be solved. Summary of the invention

[0003] The embodiments of the present invention provide a process chamber and a semiconductor device, aiming to improve the efficiency and quality of substrate processing.

[0004] An embodiment of the present invention provides a process chamber for processing a substrate, wherein the process chamber comprises a chamber body, and is characterized in that the process chamber further comprises:

[0005] A spray assembly is arranged above the chamber body;

[0006] A heating component is disposed below the chamber body;

[0007] The mounting assembly is arranged inside the chamber body, and the mounting assembly includes a plurality of mounting positions, and the plurality of mounting positions are used to place a plurality of substrates.

[0008] Furthermore, the mounting assembly includes a plurality of mounting brackets, and the plurality of mounting brackets are circumferentially distributed on the inner side wall of the chamber body.

[0009] Furthermore, a plurality of extension portions are provided from top to bottom on one side of the mounting bracket facing the center of the chamber body, and each of the extension portions is a mounting position.

[0010] Furthermore, a plurality of ventilation holes are formed on the side wall of the chamber body, and each ventilation hole is connected to a through-cavity pipeline, and the through-cavity pipeline is used to transmit gas to the interior of the chamber body through the ventilation holes.

[0011] Furthermore, the number of the vent holes is the same as the number of mounting positions on each of the mounting brackets.

[0012] Furthermore, the vent hole is opened above the extension portion, and the substrate is located between the vent hole and the extension portion.

[0013] Furthermore, the gas is nitrogen.

[0014] Furthermore, the mounting bracket is made of a high temperature resistant material.

[0015] Furthermore, a heating element is also provided on the side wall of the chamber body.

[0016] An embodiment of the present invention further provides a semiconductor device, comprising a process chamber as described in any one of the above items.

[0017] The embodiment of the present invention provides a process chamber and semiconductor equipment, the process chamber is used to process substrates, the process chamber includes a chamber body, the process chamber also includes: a spray assembly, arranged above the chamber body; a heating assembly, arranged below the chamber body; a mounting assembly, arranged inside the chamber body, the mounting assembly includes a plurality of mounting positions, and the plurality of mounting positions are used to place a plurality of the substrates. The embodiment of the present invention ensures a more uniform temperature distribution inside the chamber by arranging a spray assembly and a heating assembly in the chamber body, thereby ensuring the processing quality of the substrates, and at the same time, by using a mounting assembly including a plurality of mounting positions, the effect of processing multiple substrates in the same chamber is achieved, thereby improving the overall substrate processing efficiency, shortening the overall process time, and further improving the process capacity. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0019] Figure 1 A schematic structural diagram of a process chamber provided by an embodiment of the present invention;

[0020] Figure 2 Another structural schematic diagram of a process chamber provided by an embodiment of the present invention;

[0021] Figure 3 A schematic diagram of the distribution of mounting brackets in a process chamber provided by an embodiment of the present invention;

[0022] Figure 4A schematic diagram of the structure of a mounting bracket in a process chamber provided by an embodiment of the present invention;

[0023] Figure 5 A schematic diagram of a through-cavity pipeline in a process chamber provided in an embodiment of the present invention.

[0024] Markings in the figure:

[0025] 1. Substrate;

[0026] 2. Chamber body; 21. Ventilation hole;

[0027] 3. Spray assembly;

[0028] 4. Heating component;

[0029] 5. Mounting assembly; 51. Mounting bracket; 511. Extension;

[0030] 6. Transluminal piping. DETAILED DESCRIPTION

[0031] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0032] It should be understood that when used in this specification and the appended claims, the terms "include" and "comprises" indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or combinations thereof.

[0033] It should also be understood that the terms used in this specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. As used in the specification of the present invention and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms.

[0034] It should be further understood that the term "and / or" used in the present description and the appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0035] See below Figure 1 and Figure 2 The embodiment of the present invention provides a process chamber for processing a substrate 1, wherein the process chamber comprises a chamber body 2, and the process chamber further comprises:

[0036] A spray assembly 3 is arranged above the chamber body 2;

[0037] A heating component 4 is disposed below the chamber body 2;

[0038] The mounting assembly 5 is disposed inside the chamber body 2 , and the mounting assembly 5 includes a plurality of mounting positions, and the plurality of mounting positions are used to place a plurality of substrates 1 .

[0039] In this embodiment, the process chamber includes a chamber body 2, on which a spray component 3, a heating component 4 and an installation component 5 are provided, wherein the spray component 3 and the heating component 4 can perform preheating and other processing on the substrate 1 in the chamber, and the installation component 5 can achieve the effect of placing multiple substrates 1 based on multiple installation positions, so that the purpose of processing multiple substrates 1 in the same chamber can be achieved.

[0040] This embodiment ensures that the temperature distribution inside the chamber is more uniform by arranging a spray component 3 and a heating component 4 in the chamber body 2, thereby ensuring the processing quality of the substrate 1. At the same time, by including a mounting component 5 with multiple mounting positions, multiple substrates 1 can be processed in the same chamber, thereby improving the overall processing efficiency of the substrate 1, shortening the overall process time, and further improving the process capacity.

[0041] In an actual application scenario, the spray component 3 may be specifically an electrically heated spray plate, and the heating component 4 may be specifically a heating disk placed under the chamber body 2 .

[0042] In one embodiment, if Figure 3 As shown, the mounting assembly 5 includes a plurality of mounting brackets 51 , and the plurality of mounting brackets 51 are circumferentially distributed on the inner side wall of the chamber body 2 .

[0043] In this embodiment, the mounting assembly 5 is composed of a plurality of mounting brackets 51, for example Figure 3 As shown, there are 4 mounting brackets 51 in the chamber body 2, and the 4 mounting brackets 51 are evenly distributed on the inner wall of the chamber body 2 in the circumferential direction. Of course, in practical applications, a smaller number of mounting brackets 51 can be provided to save costs, or a larger number of mounting brackets 51 can be provided to improve the support stability of the substrate 1. In addition, the mounting brackets 51 can be fixed on the inner wall of the chamber body 2 in a precise manner by various devices such as screws and positioning pins. In this way, it can be ensured that the mounting brackets 51 and the chamber body 2 have a high degree of stability and a close fit, so that during the processing of the process chamber, the quality of the final substrate 1 will not be deteriorated due to displacement or loosening of the mounting brackets 51.

[0044] Specifically, a plurality of extension portions 511 are provided from top to bottom on one side of the mounting bracket 51 facing the center of the chamber body 2 , and each of the extension portions 511 is set as the mounting position.

[0045] By providing the extension portion 511 as the mounting position, the substrate 1 can be directly overlapped on the extension portion 511, and since a plurality of mounting brackets 51 are provided in the chamber body 2, the substrate 1 can be overlapped on the extension portions 511 of different mounting brackets 51 at the same time, thereby improving the mounting stability of the substrate 1. Figure 4 As shown, each mounting bracket 51 is provided with four extension portions 511, and accordingly, a substrate 1 can be placed on each extension portion 511, so that three or four substrates 1 can be arranged in a chamber body 2. When two chamber bodies 2 are provided, the number of substrates 1 that can be placed and processed can be doubled, which can greatly improve the processing efficiency of the substrates 1 and further improve the overall process capacity.

[0046] In some preferred embodiments, the extension portion 511 of each mounting bracket 51 can be designed to have a certain tilt angle to ensure that the substrate 1 can obtain a uniform heat treatment effect when processed in the chamber. In addition, the material selection of the mounting bracket 51 is also crucial, and high temperature resistant and corrosion resistant materials are preferred to adapt to the high temperature environment and chemical reaction conditions in the chamber. For example, PTFE, stainless steel or ceramic materials can be used. These materials not only have good mechanical strength, but also can effectively prevent the erosion of chemical substances, thereby extending the service life of the mounting bracket 51.

[0047] In order to further improve the efficiency and quality of processing the substrate 1, the mounting bracket 51 can also be designed as an adjustable bracket, that is, the spacing of the mounting positions can be adjusted according to the size and processing requirements of different substrates 1. In this way, the process chamber can adapt to the processing of more types of substrates 1, thereby improving the applicability of the process chamber.

[0048] In one embodiment, if Figure 2 As shown, the side wall of the chamber body 2 is provided with a plurality of vent holes 21. Figure 5 Each vent hole 21 is connected to a through-cavity pipeline 6 , and the through-cavity pipeline 6 is used to transmit gas to the interior of the chamber body 2 through the vent hole 21 .

[0049] By opening a vent hole 21 in the chamber body 2 and transmitting gas to the vent hole 21 through the through-cavity pipe 6, the transmitted gas can be used to adjust the temperature of the substrate 1, for example, to preheat the substrate 1, or to cool the substrate 1.

[0050] It should be noted that in the prior art, after the thin film deposition technology, the wafer substrate 1 is transferred out of the chamber, and the wafer substrate 1 is directly cooled by the cooling device in the EFEM (equipment front end module). However, this cooling treatment method has the defects of fast cooling rate and uncontrollable cooling process. Especially in high temperature processes, excessive temperature difference can easily lead to changes in the stress of the substrate 1 or cause film peeling problems. In this regard, the present embodiment can introduce cold air into the chamber body 2 through the vent holes 21 opened on the side wall of the chamber body 2 to control the temperature of the substrate 1 by ventilation and cooling (simulated annealing process), and then cool the wafer substrate 1 by the cooling device in the EFEM (equipment front end module), so as to achieve the effect of gradient cooling, thereby improving the process performance and improving the process production quality.

[0051] Specifically, when the substrate 1 is cooled by gas, the gas may be nitrogen N2. Nitrogen N2 is used as the cooling gas mainly because nitrogen has good thermal conductivity and it is an inert gas that will not react chemically with the material on the surface of the substrate 1, thereby avoiding possible pollution problems. In addition, nitrogen is widely used in the semiconductor manufacturing process, so using nitrogen as a cooling medium can reduce changes to the existing process flow and reduce implementation costs. In actual operation, by precisely controlling the flow rate and temperature of nitrogen, the temperature of the substrate 1 can be finely adjusted to achieve a better process effect. For example, during the cooling process, the substrate 1 can be preheated with nitrogen at a higher temperature, and then the nitrogen temperature can be gradually reduced to achieve a gentle cooling, effectively reducing the stress of the substrate 1 caused by the rapid temperature change, thereby avoiding problems such as film peeling.

[0052] In addition, in actual application scenarios, when the substrate 1 is cooled by nitrogen N2, the spray plate is controlled not to work, so as to ensure that the temperature of all substrates 1 in the chamber body 2 remains consistent and uniform, thereby further improving the process quality.

[0053] In another practical application scenario, by setting a heating belt to control the temperature of the through-cavity pipeline 6, it can be ensured that the gas maintains an appropriate temperature during the transportation process, thereby ensuring the continuity and reliability of the process. In addition, the temperature control of the heating belt can also be adjusted according to different process requirements to adapt to different chemical delivery conditions, further improving the flexibility and adaptability of the process.

[0054] In a specific embodiment, the number of the vent holes 21 is the same as the number of mounting positions on each mounting bracket 51. That is, each mounting position is configured accordingly and a dedicated vent hole 21 is provided, so that when the substrate 1 is placed on these mounting positions, the corresponding vent holes 21 can effectively regulate the temperature of the substrate 1 to ensure its performance stability during operation.

[0055] The vent hole 21 is provided above the extension portion 511, and the substrate 1 is located between the vent hole 21 and the extension portion 511. The vent hole 21 is designed to be provided in the upper region of the extension portion 511, ensuring that the vent hole 21 is located above the substrate 1, and the substrate 1 is located between the vent hole 21 and the extension portion 511. Such a layout design can effectively prevent the gas output from the vent hole 21 from blowing directly toward the substrate 1, thereby avoiding the problem of too fast cooling rate of the substrate 1 due to direct blowing of the gas. This design not only ensures smooth gas flow, but also helps to maintain the substrate 1 in a relatively stable temperature environment, which can further improve the quality of process treatment.

[0056] In one embodiment, the side wall of the chamber body 2 is also provided with a heating element. By providing a heating element on the side wall of the chamber body 2, precise control of the temperature inside the chamber can be achieved. A heating element, such as a heating wire or a heating rod, can provide a uniform temperature distribution, thereby avoiding the performance of the semiconductor device being affected by excessively high or low local temperatures. For example, when the temperature inside the chamber needs to be quickly raised, the heating element can respond quickly and provide enough heat to reach the required process temperature. On the contrary, when the chamber temperature needs to be lowered, the heating element can reduce or stop heating to help the chamber cool down quickly. By providing heating elements such as heating wires, the processing quality of the substrate 1 can be further improved, thereby improving the production efficiency of the entire semiconductor device and the consistency of the product.

[0057] An embodiment of the present invention further provides a semiconductor device, comprising a process chamber as described in any one of the above items.

[0058] When the semiconductor device processes the substrate 1 based on the process chamber, multiple substrates 1 are placed through the multiple mounting positions on the mounting assembly 5. When the substrate 1 needs to be temperature controlled, air can be blown to the substrate 1 through the vent 21 opened on the side wall of the chamber body 2, so as to achieve the effect of temperature control, ventilation and cooling. Thereafter, when the substrate 1 needs to be taken out, the substrate 1 can be taken out by the movement of the manipulator, and the manipulator is controlled to take out the substrate 1 from the bottom layer each time to ensure the temperature consistency of each substrate 1. After taking out the bottom layer substrate 1, the substrate 1 of the next bottom layer is placed on the mounting position of the bottom layer, and then it is processed by the heating plate, and then taken out by the manipulator, and so on, until the removal operation of all substrates 1 is completed.

[0059] The various embodiments in the specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same and similar parts between the various embodiments can be referred to each other. For the system disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part description. It should be pointed out that for ordinary technicians in this technical field, without departing from the principles of this application, several improvements and modifications can be made to the present application, and these improvements and modifications also fall within the scope of protection of the claims of this application.

[0060] It should also be noted that, in this specification, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprises", "comprising" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the statement "comprising a ..." does not exclude the presence of other identical elements in the process, method, article or device including the element.

Claims

1. A process chamber for processing a substrate, the process chamber comprising a chamber body, characterized in that: The process chamber further comprises: A spray assembly is arranged above the chamber body; A heating component is disposed below the chamber body; The mounting assembly is arranged inside the chamber body, and the mounting assembly includes a plurality of mounting positions, and the plurality of mounting positions are used to place a plurality of substrates.

2. The process chamber according to claim 1, characterized in that: The mounting assembly includes a plurality of mounting brackets, and the plurality of mounting brackets are circumferentially distributed on the inner side wall of the chamber body.

3. The process chamber according to claim 2, characterized in that: A plurality of extension portions are arranged from top to bottom on one side of the mounting bracket facing the center of the chamber body, and each of the extension portions is a mounting position.

4. The process chamber according to claim 3, characterized in that: The side wall of the chamber body is provided with a plurality of ventilation holes, each of which is connected to a through-cavity pipeline, and the through-cavity pipeline is used to transmit gas to the interior of the chamber body through the ventilation holes.

5. The process chamber according to claim 4, characterized in that: The number of the vent holes is the same as the number of mounting positions on each mounting bracket.

6. The process chamber according to claim 5, characterized in that: The vent hole is opened above the extension part, and the substrate is located between the vent hole and the extension part.

7. The process chamber according to claim 4, characterized in that: The gas is nitrogen.

8. The process chamber according to claim 2, characterized in that: The material of the mounting bracket is high temperature resistant material.

9. The process chamber according to claim 1, characterized in that: The side wall of the chamber body is also provided with a heating element.

10. A semiconductor device, characterized in that: Comprising a process chamber as described in any one of claims 1-9.

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