Necking device and method for monocrystalline silicon growth

Abstract

The invention provides a neck guiding device and method for monocrystalline silicon growth. According to the device, a crystal lifting server is connected with a neck guide crystal and a diameter calibration module and used for lifting the neck guide crystal according to pulling speed data sent by the diameter calibration module; the image sensor is arranged close to the neck guide crystal, is connected with the diameter calibration module, and is used for collecting size data of the neck guide crystal and sending the size data to the diameter calibration module; the diameter calibration module is connected with the pulling speed automatic gain calibration module and the power control module, and is used for determining first pulling speed data of the neck guide crystal according to the received size data, sending the size data to the power control module, and sending the size data and the first pulling speed to the pulling speed automatic gain calibration module; the pulling speed automatic gain calibration module is used for adjusting the first pulling speed data according to the size data to obtain second pulling speed data and sending the second pulling speed data to the diameter calibration module; the power control module is used for controlling the power of the heating unit according to the size data.

Description

Technical Field

[0001] The invention relates to the technical field of single crystal silicon manufacturing, and in particular to a neck-leading device and method for growing single crystal silicon. Background Art

[0002] The necking / necking technology proposed by Dash is a key technology for growing dislocation-free single crystal silicon by the Czochralski method. However, since the diameter during necking is difficult to control, the morphology of the crystal rod changes like a candied haws, with poor uniformity. During necking, the diameter of the crystal rod may exceed the lower and upper limits of the diameter control, and the internal dislocations and thermal stresses cannot be released in time, which leads to dislocations in crystal growth during the shoulder release and shoulder rotation stages. What's worse, the seed crystal breaks and the crystal rod breaks, resulting in reduced product quality and production efficiency. Summary of the invention

[0003] In order to solve the above technical problems, the present invention provides a neck-leading device and method for growing single crystal silicon, which can solve the problem of poor diameter uniformity of the crystal rod during neck-leading in the prior art.

[0004] In order to solve the above technical problems, the present invention adopts the following technical solutions:

[0005] The embodiment of the present invention provides a neck guide device for growing single crystal silicon, comprising:

[0006] Crystal pulling servo, image sensor, diameter calibration module, pull speed automatic gain calibration module and power control module;

[0007] The crystal pulling server is connected to the lead-neck crystal and the diameter calibration module, and is used to pull the lead-neck crystal at a target pulling speed according to the pulling speed data sent by the diameter calibration module;

[0008] The image sensor is arranged close to the lead-neck crystal and connected to the diameter calibration module, and is used to collect the size data of the lead-neck crystal and send the size data to the diameter calibration module;

[0009] The diameter calibration module is connected to the pulling speed automatic gain calibration module and the power control module, and is used to determine the first pulling speed data of the neck crystal according to the received size data, and send the size data to the power control module and the pulling speed automatic gain calibration module, and send the first pulling speed data to the pulling speed automatic gain calibration module;

[0010] The automatic gain calibration module for pulling speed is used to adjust the first pulling speed data according to the size data to obtain second pulling speed data, and send the second pulling speed data to the diameter calibration module;

[0011] The crystal pulling server is further used to pull the lead-neck crystal according to the second pulling speed data;

[0012] The power control module is used to control the power of a heating unit for heating the silicon solution according to the size data.

[0013] Furthermore, the neck guide device for growing single crystal silicon further comprises:

[0014] Quartz crucible and graphite crucible;

[0015] The quartz crucible is nested in the graphite crucible and is used to contain the silicon solution.

[0016] Furthermore, the neck guide device for growing single crystal silicon further comprises:

[0017] A water cooling jacket is disposed close to the lead-neck crystal and is used to adjust the temperature of the lead-neck crystal.

[0018] Furthermore, the neck guide device for growing single crystal silicon further comprises:

[0019] Growth furnace;

[0020] The quartz crucible, the graphite crucible and the lead-neck crystal are all arranged in the growth furnace.

[0021] Furthermore, the neck guide device for growing single crystal silicon further comprises:

[0022] a heating unit, wherein the heating unit is connected to the power control module;

[0023] The heating unit is arranged around the graphite crucible to heat the silicon solution.

[0024] The embodiment of the present invention further provides a neck-leading method for growing single crystal silicon, which is applied to the neck-leading device for growing single crystal silicon as described above, comprising:

[0025] Sending the size data of the lead-neck crystal acquired by the image sensor to the diameter calibration module;

[0026] The diameter calibration module determines the first pulling speed data of the lead-neck crystal according to the size data, sends the size data to the power control module and the pulling speed automatic gain calibration module, and sends the first pulling speed data to the pulling speed automatic gain calibration module;

[0027] The automatic gain calibration module adjusts the first pulling speed data according to the size data to obtain second pulling speed data, and sends the second pulling speed data to the crystal pulling server;

[0028] The crystal pulling server pulls the lead-neck crystal according to the second pulling speed data;

[0029] The power control module adjusts the power of a heating unit for heating the silicon solution according to the size data.

[0030] Further, the automatic gain calibration module adjusts the first pulling speed data according to the size data to obtain second pulling speed data, including the following:

[0031] If the first diameter of the first end of the neck crystal in the size data is greater than a first preset value, the first pulling speed data is increased by a first gradient through an automatic gain control logic to obtain the second pulling speed data;

[0032] If the first diameter in the size data is smaller than a second preset value, the first pulling speed data is reduced by a first gradient through an automatic gain control logic to obtain the second pulling speed data;

[0033] If the first diameter in the size data is greater than a second preset value, less than the first preset value and not equal to a third preset value, the first pulling speed data is adjusted with a third gradient through an automatic gain control logic to obtain the second pulling speed data;

[0034] Wherein, the first end is an end of the lead-in crystal close to the silicon solution.

[0035] Further, the adjusting the first pulling speed data with a third gradient by using an automatic gain control logic includes:

[0036] If the first diameter is greater than the third preset value, the first pulling speed data is increased with a third gradient through automatic gain control logic;

[0037] If the first diameter is smaller than the third preset value, the first pulling speed data is reduced with a third gradient through automatic gain control logic.

[0038] Further, the power control module adjusts the power of a heating unit for heating the silicon solution according to the size data, including any of the following:

[0039] If the first diameter of the first end of the neck crystal in the size data is greater than a first preset value, the power of the heating unit is increased at a fourth gradient;

[0040] If the first diameter in the size data is smaller than a second preset value, reducing the power of the heating unit at a fifth gradient;

[0041] If the first diameter in the size data is greater than the second preset value, less than the first preset value and not equal to the third preset value, the power of the heating unit is adjusted with a sixth gradient;

[0042] Wherein, the first end is an end of the lead-in crystal close to the silicon solution.

[0043] Further, the adjusting the power of the heating unit with the sixth gradient includes any one of the following:

[0044] If the first diameter is greater than the third preset value, increasing the power of the heating unit at a sixth gradient;

[0045] If the first diameter is smaller than the third preset value, the power of the heating unit is reduced at a sixth gradient.

[0046] The beneficial effects of the present invention are:

[0047] The neck-leading device for growing single crystal silicon according to the embodiment of the present invention can collect the growth diameter of the neck-leading crystal in real time through an image sensor; through a diameter calibration module, it can determine the current first pulling speed data of the neck-leading crystal according to the size data of the neck-leading crystal collected by the image sensor; through the pulling speed automatic gain calibration module, it can determine to adjust the first pulling speed data to obtain the second pulling speed data according to the size data and the first pulling speed data; and then adjust the pulling speed of the crystal through the crystal pulling server. The scheme of the present invention can achieve real-time adjustment of the diameter of the neck-leading crystal during the neck-leading process of single crystal silicon, can solve the problem of poor diameter uniformity of the crystal rod during neck-leading in the prior art, and effectively remove dislocations and thermal stresses inside the crystal rod. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Figure 1 A schematic diagram showing the structure of a neck guide device for growing single crystal silicon according to an embodiment of the present invention;

[0049] Figure 2 A schematic diagram showing the steps of a necking method for growing single crystal silicon according to an embodiment of the present invention;

[0050] Figure 3 A logical schematic diagram showing a neck-leading method for growing single crystal silicon according to an embodiment of the present invention. DETAILED DESCRIPTION

[0051] In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, the following will be described in detail in conjunction with the accompanying drawings and specific embodiments. In the following description, specific details such as specific configurations and components are provided only to help fully understand the embodiments of the present invention. Therefore, it should be clear to those skilled in the art that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the present invention. In addition, for clarity and brevity, the description of known functions and structures is omitted.

[0052] It should be understood that the references to "one embodiment" or "an embodiment" throughout the specification mean that the specific features, structures, or characteristics associated with the embodiment are included in at least one embodiment of the present invention. Therefore, the references to "in one embodiment" or "in an embodiment" appearing throughout the specification do not necessarily refer to the same embodiment. In addition, these specific features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0053] The present invention aims at the problem of poor uniformity of diameter of crystal rod during necking in the prior art, and provides a necking device and method for growing single crystal silicon.

[0054] Neck extension / necking is collectively referred to as neck extension, which is well known to practitioners in this industry and means the same thing.

[0055] like Figure 1 As shown, an embodiment of the present invention provides a neck guide device for growing single crystal silicon, comprising:

[0056] A crystal pulling server 1, an image sensor 2, a diameter calibration module 3, a pulling speed automatic gain calibration module 4 and a power control module 5;

[0057] The crystal pulling server 1 is connected to the lead-neck crystal and the diameter calibration module 3, and is used to pull the lead-neck crystal at a target pulling speed according to the pulling speed data sent by the diameter calibration module 3;

[0058] The image sensor 2 is arranged close to the lead-neck crystal and connected to the diameter calibration module 3, and is used to collect the size data of the lead-neck crystal and send the size data to the diameter calibration module 3;

[0059] The diameter calibration module 3 is connected to the pulling speed automatic gain calibration module 4 and the power control module 5, and is used to determine the first pulling speed data of the neck crystal according to the received size data, and send the size data to the power control module 5 and the pulling speed automatic gain calibration module 4, and send the first pulling speed data to the pulling speed automatic gain calibration module 4;

[0060] The pulling speed automatic gain calibration module 4 is used for adjusting the first pulling speed data according to the size data to obtain second pulling speed data, and sending the second pulling speed data to the diameter calibration module 3;

[0061] The crystal pulling server 1 is also used to pull the lead-neck crystal according to the second pulling speed data;

[0062] The power control module 5 is used to control the power of a heating unit for heating the silicon solution according to the size data.

[0063] Optionally, the image sensor may be a CCD camera.

[0064] Optionally, the diameter calibration module is a control system that performs proportional, integral and differential control (Proportional Integral Derivative, PID).

[0065] The neck-leading device for growing single crystal silicon according to the embodiment of the present invention can collect the growth diameter of the neck-leading crystal in real time through an image sensor; through a diameter calibration module, it can determine the current first pulling speed data of the neck-leading crystal according to the size data of the neck-leading crystal collected by the image sensor; through the pulling speed automatic gain calibration module, it can determine to adjust the first pulling speed data to obtain the second pulling speed data according to the size data and the first pulling speed data; and then adjust the pulling speed of the crystal through the crystal pulling server. The scheme of the present invention can achieve real-time adjustment of the diameter of the neck-leading crystal during the neck-leading process of single crystal silicon, can solve the problem of poor diameter uniformity of the crystal rod during neck-leading in the prior art, and effectively remove dislocations and thermal stresses inside the crystal rod.

[0066] Optionally, the neck guide device for growing single crystal silicon further includes:

[0067] A quartz crucible 6 and a graphite crucible 7;

[0068] The quartz crucible 6 is nested in the graphite crucible 7 and is used to contain the silicon solution.

[0069] The neck guide device for growing single crystal silicon in the embodiment of the present invention can accommodate silicon raw materials by providing the quartz crucible and the graphite crucible, and heat the silicon raw materials to melt, thereby providing silicon solution for crystal growth; by accommodating the silicon solution in the quartz crucible, contamination of the silicon solution can be avoided.

[0070] Optionally, the neck guide device for growing single crystal silicon further includes:

[0071] A water cooling jacket 8 is provided close to the lead-neck crystal and is used for adjusting the temperature of the lead-neck crystal.

[0072] It should be noted that a relatively high temperature is required to melt silicon, but the temperature of the surface of the neck crystal during silicon growth does not need to be too high. Therefore, the temperature around the neck crystal needs to be lowered.

[0073] The neck guide device for growing single crystal silicon in the embodiment of the present invention can timely reduce the temperature of the crystal surface by providing the water cooling jacket, thereby avoiding thermal stress caused by excessive temperature.

[0074] Optionally, the neck guide device for growing single crystal silicon further includes:

[0075] Growth furnace 9;

[0076] The quartz crucible 6 , the graphite crucible 7 and the lead-neck crystal are all arranged in the growth furnace 9 .

[0077] Optionally, a heat-insulating layer is provided inside the growth furnace, and the melting point of the heat-insulating layer is greater than a preset temperature.

[0078] Optionally, the neck guide device for growing single crystal silicon further includes:

[0079] A heating unit 10, wherein the heating unit 10 is connected to the power control module 5;

[0080] The heating unit 10 is disposed around the graphite crucible 7 and is used to control the temperature in the growth furnace 9 .

[0081] Optionally, the heating unit is a heating wire or a heating metal plate.

[0082] The neck-leading device for growing single crystal silicon according to an embodiment of the present invention can adjust the temperature in the growth furnace in real time according to the first diameter of the neck-leading crystal by setting the heating unit, thereby affecting the diameter of the neck-leading crystal by temperature and improving the uniformity of the diameter of the neck-leading crystal.

[0083] like Figure 2 As shown, an embodiment of the present invention further provides a neck-leading method for growing single crystal silicon, which is applied to the neck-leading device for growing single crystal silicon as described above, and comprises the following steps:

[0084] Step 201, sending the size data of the lead-neck crystal obtained by the image sensor to the diameter calibration module;

[0085] Step 202, the diameter calibration module determines the first pulling speed data of the lead-neck crystal according to the size data, sends the size data to the power control module and the pulling speed automatic gain calibration module, and sends the first pulling speed data to the pulling speed automatic gain calibration module;

[0086] Step 203, the automatic gain calibration module adjusts the first pulling speed data according to the size data to obtain second pulling speed data, and sends the second pulling speed data to the crystal pulling server;

[0087] Step 204, the crystal pulling server pulls the lead-neck crystal according to the second pulling speed data;

[0088] Step 205: The power control module adjusts the power of a heating unit for heating the silicon solution according to the size data.

[0089] The necking method for growing single crystal silicon of the embodiment of the present invention can collect the growth diameter of the necking crystal in real time through the image sensor; through the diameter calibration module, the current first pulling speed data of the necking crystal can be determined according to the size data of the necking crystal collected by the image sensor; through the pulling speed automatic gain calibration module, the second pulling speed data can be determined to be adjusted according to the size data and the first pulling speed data; and then the pulling speed of the crystal can be adjusted through the crystal pulling server. The scheme of the present invention can realize the real-time adjustment of the diameter of the necking crystal in the process of necking single crystal silicon, can solve the problem of poor diameter uniformity of the crystal rod during necking in the prior art, and effectively remove the dislocation and thermal stress inside the crystal rod.

[0090] Optionally, the automatic gain calibration module adjusts the first pulling speed data according to the size data to obtain second pulling speed data, including any of the following:

[0091] If the first diameter of the first end of the neck crystal in the size data is greater than a first preset value, the first pulling speed data is increased by a first gradient through an automatic gain control logic to obtain the second pulling speed data;

[0092] If the first diameter in the size data is smaller than a second preset value, the first pulling speed data is reduced by a first gradient through an automatic gain control logic to obtain the second pulling speed data;

[0093] If the first diameter in the size data is greater than a second preset value, less than the first preset value and not equal to a third preset value, the first pulling speed data is adjusted with a third gradient through an automatic gain control logic to obtain the second pulling speed data;

[0094] Wherein, the first end is an end of the lead-in crystal close to the silicon solution.

[0095] In the embodiment of the present invention, the first diameter is D0, and the first preset value is D 大 The second preset value is D 小 , the third preset value is D.

[0096] Optionally, the first gradient is equal to the second gradient, and the first gradient is greater than the third gradient.

[0097] It should be noted that, the greater the pulling speed of the lead-neck crystal, the smaller the diameter of the lead-neck crystal, and thus the diameter of the lead-neck crystal can be adjusted by adjusting the pulling speed.

[0098] It should be noted that the first diameter is greater than the first preset value, that is, the first diameter is too large; the first diameter in the size data is less than the second preset value, that is, the first diameter is too small. The first diameter is too large or too small, both of which are beyond a certain management range, and will lead to poor uniformity of the lead-neck crystal, so the first pulling speed data needs to be adjusted with a larger gradient.

[0099] It should be noted that the first diameter in the size data is greater than the second preset value, less than the first preset value and not equal to the third preset value, that is, although the first diameter is not the required target diameter, the deviation between the first diameter and the target diameter is not large, and the first pulling speed data is adjusted by a smaller gradient.

[0100] Optionally, the adjusting the first pulling speed data with a third gradient by using an automatic gain control logic includes:

[0101] If the first diameter is greater than the third preset value, the first pulling speed data is increased with a third gradient through automatic gain control logic;

[0102] If the first diameter is smaller than the third preset value, the first pulling speed data is reduced with a third gradient through automatic gain control logic.

[0103] Optionally, the power control module adjusts the power of a heating unit for heating the silicon solution according to the size data, including any of the following:

[0104] If the first diameter of the first end of the neck crystal in the size data is greater than a first preset value, the power of the heating unit is increased at a fourth gradient;

[0105] If the first diameter in the size data is smaller than a second preset value, reducing the power of the heating unit at a fifth gradient;

[0106] If the first diameter in the size data is greater than the second preset value, less than the first preset value and not equal to the third preset value, the power of the heating unit is adjusted with a sixth gradient;

[0107] Wherein, the first end is an end of the lead-in crystal close to the silicon solution.

[0108] It should be noted that, when the same pulling speed is adopted for the lead-neck crystal, the temperature of the silicon solution is related to the diameter of the lead-neck crystal. Therefore, the diameter of the lead-neck crystal can be adjusted by adjusting the temperature of the silicon solution.

[0109] It should be noted that the first diameter is greater than the first preset value, that is, the first diameter is too large; the first diameter in the size data is less than the second preset value, that is, the first diameter is too small. If the first diameter is too large or too small, it exceeds a certain management range and will result in poor uniformity of the lead-neck crystal, so the power of the heating unit needs to be adjusted with a larger gradient.

[0110] It should be noted that the first diameter in the size data is greater than the second preset value, less than the first preset value and not equal to the third preset value, that is, although the first diameter is not the required target diameter, the deviation between the first diameter and the target diameter is not large, and the power of the heating unit is adjusted through a smaller gradient.

[0111] Optionally, the adjusting the power of the heating unit with the sixth gradient includes any one of the following:

[0112] If the first diameter is greater than the third preset value, increasing the power of the heating unit at a sixth gradient;

[0113] If the first diameter is smaller than the third preset value, the power of the heating unit is reduced at a sixth gradient.

[0114] like Figure 3 As shown, a logical schematic diagram of the neck-leading method for growing single crystal silicon according to an embodiment of the present invention is as follows:

[0115] The first diameter D0 of the lead-in crystal is obtained by the image sensor, and the pulling speed at this time (the first pulling speed data) is P / S0, and the output power of the power control unit at this time is P0;

[0116] Sending the first diameter to a diameter calibration module and a power control module, and adjusting the first pulling speed through the diameter calibration module, and adjusting the power of the heating unit through the power control module;

[0117] Specifically: If D0>D 大 , the first drawing speed is adjusted by the first gradient, that is, the drawing speed is increased by 5% to 8%; the power of the heating unit is adjusted by the fourth gradient, that is, temperature compensation P+3 is performed;

[0118] If D0<D 小, then the first pulling speed is adjusted by the second gradient, that is, the pulling speed is reduced by 5% to 8%; the power of the heating unit is adjusted by the fifth gradient, that is, temperature compensation P-3 is performed;

[0119] If D 小 <D0<D 大 , and D0≠D, then in the case of D0>D, the first pulling speed is adjusted by the third gradient, that is, the pulling speed is increased by 1% to 2%; the power of the heating unit is adjusted by the fourth gradient, that is, temperature compensation P+1 is performed; then in the case of D0<D, the first pulling speed is adjusted by the third gradient, that is, the pulling speed is reduced by 1% to 2%; the power of the heating unit is adjusted by the fourth gradient, that is, temperature compensation P-1 is performed.

[0120] It should be noted that each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the embodiments, since they are basically similar to the product embodiments, the description is relatively simple, and the relevant parts can be referred to the partial description of the product embodiments.

[0121] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0122] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” or “under” another element, it can be “directly on” or “under” the other element or intervening elements may be present.

[0123] In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in a suitable manner in any one or more embodiments or examples.

[0124] The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art who is familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A neck guide device for growing single crystal silicon, characterized in that: include: Crystal pulling servo, image sensor, diameter calibration module, pull speed automatic gain calibration module and power control module; The crystal pulling server is connected to the lead-neck crystal and the diameter calibration module, and is used to pull the lead-neck crystal at a target pulling speed according to the pulling speed data sent by the diameter calibration module; The image sensor is arranged close to the lead-neck crystal and connected to the diameter calibration module, and is used to collect the size data of the lead-neck crystal and send the size data to the diameter calibration module; The diameter calibration module is connected to the pulling speed automatic gain calibration module and the power control module, and is used to determine the first pulling speed data of the neck crystal according to the received size data, and send the size data to the power control module and the pulling speed automatic gain calibration module, and send the first pulling speed data to the pulling speed automatic gain calibration module; The automatic gain calibration module for pulling speed is used to adjust the first pulling speed data according to the size data to obtain second pulling speed data, and send the second pulling speed data to the diameter calibration module; The crystal pulling server is further used to pull the lead-neck crystal according to the second pulling speed data; The power control module is used to control the power of a heating unit for heating the silicon solution according to the size data.

2. The neck guide device for growing single crystal silicon according to claim 1, characterized in that: The neck guide device for growing single crystal silicon also includes: Quartz crucible and graphite crucible; The quartz crucible is nested in the graphite crucible and is used to contain the silicon solution.

3. The neck guide device for growing single crystal silicon according to claim 1, characterized in that: The neck guide device for growing single crystal silicon also includes: A water cooling jacket is disposed close to the lead-neck crystal and is used to adjust the temperature of the lead-neck crystal.

4. The neck guide device for growing single crystal silicon according to claim 2, characterized in that: The neck guide device for growing single crystal silicon also includes: Growth furnace; The quartz crucible, the graphite crucible and the lead-neck crystal are all arranged in the growth furnace.

5. The neck guide device for growing single crystal silicon according to claim 4, characterized in that: The neck guide device for growing single crystal silicon also includes: a heating unit, wherein the heating unit is connected to the power control module; The heating unit is arranged around the graphite crucible to heat the silicon solution.

6. A method for guiding the neck of single crystal silicon growth, applied to the device for guiding the neck of single crystal silicon growth as claimed in any one of claims 1 to 5, characterized in that: include: Sending the size data of the lead-neck crystal acquired by the image sensor to the diameter calibration module; The diameter calibration module determines the first pulling speed data of the lead-neck crystal according to the size data, sends the size data to the power control module and the pulling speed automatic gain calibration module, and sends the first pulling speed data to the pulling speed automatic gain calibration module; The automatic gain calibration module adjusts the first pulling speed data according to the size data to obtain second pulling speed data, and sends the second pulling speed data to the crystal pulling server; The crystal pulling server pulls the lead-neck crystal according to the second pulling speed data; The power control module adjusts the power of a heating unit for heating the silicon solution according to the size data.

7. The method for growing single crystal silicon according to claim 6, characterized in that: The automatic gain calibration module adjusts the first pulling speed data according to the size data to obtain second pulling speed data, including the following: If the first diameter of the first end of the neck crystal in the size data is greater than a first preset value, the first pulling speed data is increased by a first gradient through an automatic gain control logic to obtain the second pulling speed data; If the first diameter in the size data is smaller than a second preset value, the first pulling speed data is reduced by a first gradient through an automatic gain control logic to obtain the second pulling speed data; If the first diameter in the size data is greater than a second preset value, less than the first preset value and not equal to a third preset value, the first pulling speed data is adjusted with a third gradient through an automatic gain control logic to obtain the second pulling speed data; Wherein, the first end is an end of the lead crystal close to the silicon solution.

8. The method for growing single crystal silicon according to claim 7, characterized in that: The adjusting the first pulling speed data with a third gradient by using an automatic gain control logic includes: If the first diameter is greater than the third preset value, the first pulling speed data is increased with a third gradient through automatic gain control logic; If the first diameter is smaller than the third preset value, the first pulling speed data is reduced with a third gradient through automatic gain control logic.

9. The method for growing single crystal silicon according to claim 6, characterized in that: The power control module adjusts the power of a heating unit for heating the silicon solution according to the size data, including any of the following: If the first diameter of the first end of the neck crystal in the size data is greater than a first preset value, the power of the heating unit is increased at a fourth gradient; If the first diameter in the size data is smaller than a second preset value, reducing the power of the heating unit at a fifth gradient; If the first diameter in the size data is greater than the second preset value, less than the first preset value and not equal to the third preset value, the power of the heating unit is adjusted with a sixth gradient; Wherein, the first end is an end of the lead-in crystal close to the silicon solution.

10. The method for growing single crystal silicon according to claim 9, characterized in that: The step of adjusting the power of the heating unit with the sixth gradient includes any one of the following: If the first diameter is greater than the third preset value, increasing the power of the heating unit at a sixth gradient; If the first diameter is smaller than the third preset value, the power of the heating unit is reduced at a sixth gradient.

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