Liquid phase epitaxial growth tool
By introducing the design of connecting the drainage surface and the substrate growth surface in the liquid phase epitaxial growth tool, the problem of mother liquor residue during the liquid phase epitaxial process is solved, the effect of reducing mother liquor consumption and crystal loss is achieved, and production costs are reduced.
Patent Information
- Application Number
- CN202411986075.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2025-03-28
AI Technical Summary
During the liquid phase epitaxial process, mother liquor is prone to remain on the wafer, resulting in increased consumption and crystal loss, and is costly.
A liquid phase epitaxial growth tool is designed, including a bracket, a support member and a substrate. The drainage surface of the support is connected to the growth surface of the substrate, and the mother liquid is guided out of the flow through with gravity to reduce residue.
It effectively reduces the residue and consumption of mother liquor, reduces crystal loss and production costs, and improves the efficiency of the workpiece.
Smart Images
Figure CN119710902A_ABST
Abstract
Description
Technical Field
[0001] The present application belongs to the technical field of liquid phase epitaxy, and specifically relates to a liquid phase epitaxial growth tool. Background Art
[0002] Liquid phase epitaxy is a crystal growth technology based on the principle of liquid-solid phase transition. The substrate is immersed in a supersaturated solution, namely a metal mother liquid, and the solute in the metal mother liquid is deposited on the substrate surface to achieve thin film growth. At present, in the process of liquid phase epitaxy, due to the high viscosity of the metal mother liquid and its strong adhesion to the substrate, the mother liquid is easy to remain on the wafer, which will not only increase the mother liquid consumption, but also cause crystal loss in the mother liquid residual area, resulting in high cost. Summary of the invention
[0003] Based on this, in order to solve the technical problem, a liquid phase epitaxial growth tooling is provided to reduce the mother liquid remaining on the wafer.
[0004] The technical solution proposed in this application is: A liquid phase epitaxial growth tool, comprising: Bracket; A support member, disposed on the bracket; A substrate is disposed on the support, and a side of the substrate facing away from the support has a growth surface; The support member comprises a support portion, the bottom of the substrate is supported by the support portion, and the support portion has a drainage surface on a side facing away from the bracket, and the top of the drainage surface is connected to the bottom of the growth surface.
[0005] When the above-mentioned liquid phase epitaxial growth tooling is used, during the process of liquid phase epitaxy, the solute in the mother liquid is deposited on the growth surface of the substrate, and the mother liquid flows downward under the action of gravity. When it flows to the bottom of the growth surface, since the drainage surface is connected to the growth surface, the mother liquid will flow into the drainage surface, that is, the mother liquid on the growth surface can be flowed out, thereby effectively reducing the residual mother liquid, reducing the consumption of the mother liquid, and also reducing the crystal loss and reducing the cost.
[0006] Furthermore, the support member further includes a pressing portion, which is disposed on the top of the support portion and is used to press the substrate onto the bracket.
[0007] Furthermore, the pressing portion includes two pressing heads, the two pressing heads are arranged at intervals along the width direction of the substrate, and the drainage surface is located between the two pressing heads.
[0008] Furthermore, each of the pressing heads has a pressing surface on the side facing the substrate, and from the end of the pressing head connected to the support portion to the end away from the support portion, the size of the positive projection of the pressing head on the substrate gradually decreases, and the distance between the pressing surface and the substrate gradually increases.
[0009] Furthermore, the drainage surface includes a plane segment and a curved segment, the top of the plane segment is connected to the bottom of the growth surface, and the plane segment and the growth surface are located in the same plane, and the curved segment is connected to one end of the plane segment away from the growth surface.
[0010] Furthermore, the support portion has a bottom plane on a side facing away from the bracket, the curved surface segment includes a first curved surface and a second curved surface, two ends of the first curved surface are respectively connected to the plane segment and the second curved surface, and are respectively tangent to the plane segment and the second curved surface, and one end of the second curved surface away from the first curved surface is connected to the bottom plane, and is tangent to the bottom plane; Wherein, the first curved surface is concave toward the supporting portion, and the second curved surface is convex toward a direction away from the supporting portion.
[0011] Furthermore, the drainage surface is a plane.
[0012] Furthermore, the liquid phase epitaxial growth tool is used for growing mercury cadmium telluride crystals, and the material of the substrate is silicon.
[0013] Furthermore, the liquid phase epitaxial growth tooling also includes a fixing part, which is arranged on the bracket and abuts against the top of the substrate.
[0014] Furthermore, the bracket has a plurality of side surfaces, and each of the side surfaces is provided with the substrate and the support member.
[0015] In summary, the liquid phase epitaxial growth tooling provided in this application has at least the following advantages: 1. By setting a drainage surface, the drainage surface is connected to the growth surface of the substrate to guide the mother liquid on the growth surface to flow out, reduce the residual mother liquid, thereby reducing the waste of mother liquid and the loss of crystals, and reducing costs; 2. When growing HgCdTe crystals, the substrate is made of silicon, which can further reduce the residual mother liquor; 3. The pressure head is pressed against the edge of the substrate, which has little obstruction on the mother liquid dripping on the growth surface and can reduce the residual mother liquid; 4. The bracket has multiple sides, and a substrate and a support can be set on each side, which improves efficiency. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] The accompanying drawings are used to provide further understanding of the present application and constitute a part of the specification. They are used to explain the present application together with the embodiments of the present application and do not constitute a limitation of the present application.
[0017] Figure 1 A schematic diagram of the structure of a liquid phase epitaxial growth tooling provided in one embodiment of the present application; Figure 2 for Figure 1 A schematic diagram of the structure of the substrate and the support member in the growth tooling shown; Figure 3 for Figure 1 A schematic diagram of the structure of the support member in the growth tooling shown; Figure 4 for Figure 3 A schematic diagram of the cross-sectional structure of the support member at AA shown; Figure 5 and Figure 6 for Figure 1 Schematic diagram of mother liquid flow during crystal growth in the growth tool shown; Figure 7 To adopt Figure 1 The photo of the wafer produced by the growth tool shown is taken under a Zeiss microscope; Figure 8 Schematic diagram of mother liquid flow during crystal growth in traditional growth tooling; Fig. 9 This is a photo of a wafer produced using traditional growth tooling under a Zeiss microscope.
[0018] Description of labels: 100, bracket; 200, support member; 210, support portion; 211, drainage surface; 212, plane section; 213, curved section; 214, bottom plane; 215, first curved surface; 216, second curved surface; 220, pressure head; 221, pressing surface; 300, substrate; 400, fixing member. DETAILED DESCRIPTION
[0019] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
[0020] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicating orientations or positional relationships are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.
[0021] like Figure 1 As shown, the present application provides a liquid phase epitaxial growth tool, including a support 100, a support member 200 and a substrate 300. The support member 200 and the substrate 300 are both arranged on the support 100, the bottom of the substrate 300 is supported on the support member 200, and the side of the substrate 300 facing away from the support 100 has a growth surface, and the growth surface is used for crystal growth.
[0022] Further, the support member 200 includes a support portion 210, the bottom of the substrate 300 is supported on the support portion 210, and the support portion 210 has a drainage surface 211 on the side facing away from the support 100. The top of the drainage surface 211 is connected to the bottom of the growth surface, so that the mother liquid on the substrate 300 can flow into the drainage surface 211.
[0023] Using the above-mentioned liquid phase epitaxial growth tooling, during the process of liquid phase epitaxy, the solute in the mother liquid is deposited on the growth surface of the substrate 300, and the mother liquid flows downward under the action of gravity. When it flows to the bottom of the growth surface, since the drainage surface 211 is connected to the growth surface, the mother liquid will flow into the drainage surface 211, that is, the mother liquid on the growth surface can be flowed out, thereby effectively reducing the residual mother liquid, reducing the consumption of the mother liquid, and also reducing the crystal loss and reducing the cost.
[0024] Optionally, the thickness of the top of the support part 210 is the same as the thickness of the substrate 300, so that the top of the drainage surface 211 is connected to the bottom of the growth surface. In other embodiments, the thickness of the two may be different, but the support 100 is provided with a step structure, the support 200 and the substrate 300 are arranged at the step structure, and under the action of the step structure, the top of the drainage surface 211 and the bottom of the growth surface are located in the same plane, that is, the top of the drainage surface 211 is connected to the bottom of the growth surface.
[0025] It should be explained that after the crystal growth is completed, the substrate 300 will enter the next process after being removed, and the residual mother liquor will enter the next process along with the substrate 300 and the wafer, while the bracket 100 and the support 200 can be directly reused, and the mother liquor attached to the bracket 100 and the support 200 can be recovered by scraping or other means, thereby reducing the waste of mother liquor. In one embodiment, the above-mentioned support member 200 and substrate 300 are both arranged on the side of the bracket 100; at the same time, the bracket 100 includes multiple sides, each side is provided with a support member 200 and a substrate 300, and each substrate 300 can be used for crystal growth, so that multiple crystal growth operations can be performed simultaneously to improve efficiency.
[0026] In one embodiment, the liquid phase epitaxial growth tooling further includes a fixing member 400, which is disposed on the bracket 100 and abuts against the top of the substrate 300. The fixing member 400 cooperates with the support member 200 to fix the substrate 300 on the bracket 100. Further, the fixing member 400 can also press the top of the substrate 300 against the side of the bracket 100. In a preferred embodiment, the fixing member 400 is detachably connected to the bracket 100 to facilitate the disassembly and assembly of the substrate 300. Optionally, the fixing member 400 is detachably connected to the bracket 100 by screws.
[0027] In a specific embodiment, the liquid phase epitaxial growth tool is used for the growth of mercury cadmium telluride crystals. At the same time, the material of the substrate 300 is silicon. Compared with the cadmium zinc telluride substrate and the cadmium telluride substrate, the lattice constant of mercury cadmium telluride ranges from 0.646 to 0.648 nm, the lattice constant of cadmium zinc telluride ranges from 0.61 to 0.648 nm, the lattice constant of cadmium telluride is 0.648 nm, and the lattice constant of silicon is 0.543 nm. The lattice matching degree between the silicon substrate and the cadmium zinc telluride crystal is the lowest, and the corresponding silicon substrate has the weakest adsorption effect on the mercury cadmium telluride mother liquor, thereby reducing the residual mother liquor.
[0028] See also Figures 2 to 4 In one embodiment, the drainage surface 211 includes a plane section 212 and a curved section 213. The top of the plane section 212 is connected to the growth surface, and the curved section 213 is connected to one end of the plane section 212 away from the growth surface. The mother liquid flows out through the plane section 212 and the curved section 213 in sequence. Furthermore, the side of the support portion 210 away from the bracket 100 also has a bottom plane 214. The bottom plane 214 is connected to one end of the curved section 213 away from the plane section 212, and the bottom plane 214 is located at the bottom of the support portion 210, so the mother liquid finally drips from the bottom plane 214.
[0029] Preferably, the curved surface section 213 includes a first curved surface 215 and a second curved surface 216, and both ends of the first curved surface 215 are connected to the plane section 212 and the second curved surface 216, respectively, and are tangent to the plane section 212 and the second curved surface 216, respectively; one end of the second curved surface 216 away from the first curved surface 215 is connected to the bottom plane 214, and is tangent to the bottom plane 214. At the same time, the first curved surface 215 is concave toward the support portion 210, and the second curved surface 216 is convex in the direction away from the support portion 210, so that the mother liquid can flow into the bottom plane 214 more smoothly.
[0030] Combination Figure 4 It can be seen that the bottom plane 214 is located below the drainage surface 211, and the mother liquid drips through the drainage surface 211 and the bottom plane 214 in sequence under the action of gravity. Among them, the length of the plane section 212 along the vertical direction is 8-10 mm, and the curvature radius of the first curved surface 215 and the second curved surface 216 are both 3-6 mm.
[0031] In another embodiment, the entire drainage surface 211 may also be a plane, and the top of the drainage surface 211 is connected to the bottom of the growth surface, and the bottom of the drainage surface 211 is connected to the bottom plane 214. In this case, the drainage surface 211 is an inclined surface. Of course, the drainage surface 211 may also coincide with the bottom plane 214, that is, the support portion 210 is in the shape of a cuboid.
[0032] In one embodiment, the support member 200 further includes a pressing portion, which is disposed on the top of the support portion 210 and is used to press the substrate 300 against the bracket 100. Further, the pressing portion includes two pressing heads 220, which are arranged along the width direction of the substrate 300, that is, Figure 1 The two pressure heads 220 are arranged at intervals in the left and right directions of the support part 210, and the drainage surface 211 is located between the two pressure heads 220. The two pressure heads 220 are pressed against the edge of the substrate 300 to press the substrate 300 tightly. In the width direction of the substrate 300, the size of the pressure head 220 is much smaller than the size of the drainage surface 211, so the pressure head 220 has a small obstruction effect on the mother liquid, and most of the mother liquid on the growth surface will still be discharged through the drainage surface 211.
[0033] In other embodiments, the support member 200 may also only support the substrate 300, that is, in the width direction of the substrate 300, the size of the drainage surface 211 is not less than the size of the substrate 300, so as to ensure that the bottom of the growth surface is completely connected to the drainage surface 211, so that the mother liquid at each location of the bottom of the growth surface can flow into the drainage surface 211; in this case, a pressing member may be provided on the support 100, and the pressing member is located on both sides of the width direction of the substrate 300, so as to press the substrate 300 on the support 100. The following description is made by taking the setting of the pressing part on the support member 200 as an example.
[0034] In one embodiment, each pressing head 220 has a pressing surface 221 on the side facing the substrate 300. From the end of the pressing head 220 connected to the support portion 210 to the end away from the support portion 210, that is, from bottom to top in the vertical direction, the size of the positive projection of the pressing head 220 on the substrate 300 gradually decreases, and the distance between the pressing surface 221 and the substrate 300 gradually increases. Figure 4 In the illustrated embodiment, the top of the pressure head 220 is a pointed tip to further reduce obstruction to the mother liquid and reduce the residual mother liquid; the pressing surface 221 is a plane, and the bottom of the pressing surface 221 is flush with the drainage surface 211 to achieve pressing of the substrate 300 so that the growth surface of the substrate 300 is connected to the top of the drainage surface 211.
[0035] In one embodiment, the support member 200 is detachably connected to the bracket 100 to facilitate the disassembly and assembly of the substrate 300. Optionally, a connection hole is formed through the bottom plane 214 of the support portion 210, and a screw is inserted through the connection hole and connected to the bracket 100 to lock and fix the support member 200 to the bracket 100.
[0036] In order to facilitate understanding of the technical solution of the present application, two examples are provided here for illustration: Example 1 According to the assembly growth tooling in the above embodiment, the tooling after assembly is as follows Figure 1 As shown, the tooling is then placed in a growth device for crystal growth, and after the growth is completed, the tooling is pulled to separate the mother liquid and the substrate 300. After the temperature in the growth device returns to room temperature, the wafer on the substrate 300 is taken out, and then the wafer is photographed using a Zeiss microscope.
[0037] Example 2 When a conventional growth tool is used for crystal growth, the structure for supporting the substrate 300 contacts one or two points on the bottom of the substrate, and most of the bottom of the substrate 300 is in a suspended state. Figure 8 As shown. The growth equipment and parameters in this example are the same as those in the embodiment. After the growth is completed and the temperature in the growth equipment is restored to room temperature, the wafer on the substrate 300 is taken out and then photographed by a Zeiss microscope.
[0038] like Figure 5 and Figure 6 As shown, using the growth tooling provided by the present application, the mother liquid on the growth surface will flow into the drainage surface 211, corresponding to the photo in Example 1 as shown in FIG. Figure 7 As shown, there is basically no mother liquid remaining on the wafer; Figure 8 As shown, using the conventional growth tooling, most of the bottom of the substrate 300 is in a suspended state, and the mother liquid will accumulate at the bottom, as shown in the photo of Example 2. Fig. 9As shown, there is obvious mother liquid residue under the wafer, with a size of 4*6mm. It can be seen that the growth tooling provided by the present application can effectively reduce the mother liquid residue.
[0039] In summary, the liquid phase epitaxial growth tooling provided in this application has at least the following advantages: 1. By providing a drainage surface 211, the drainage surface 211 is connected to the growth surface of the substrate 300 to guide the mother liquid on the growth surface to flow out, reduce the residual mother liquid, thereby reducing the waste of mother liquid and the loss of crystals, and reducing costs; 2. When growing HgCdTe crystals, the substrate 300 is made of silicon, which can further reduce the residual mother liquid; 3. The pressure head 220 is pressed against the edge of the substrate 300, which has little obstruction on the mother liquid dripping on the growth surface, thereby reducing the residual mother liquid; 4. The bracket 100 has multiple side surfaces, and the substrate 300 and the support member 200 can be disposed on each side surface, thereby improving efficiency.
[0040] Although the embodiments of the present application have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present application, and that the scope of the present application is defined by the appended claims and their equivalents.
Claims
1. A liquid phase epitaxial growth tool, characterized in that: include: Bracket; A support member, disposed on the bracket; A substrate is disposed on the support, and a side of the substrate facing away from the support has a growth surface; The support member comprises a support portion, the bottom of the substrate is supported by the support portion, and the support portion has a drainage surface on a side facing away from the bracket, and the top of the drainage surface is connected to the bottom of the growth surface.
2. The liquid phase epitaxial growth tooling according to claim 1, characterized in that: The support member further comprises a pressing portion, which is disposed on the top of the support portion and is used to press the substrate onto the bracket.
3. The liquid phase epitaxial growth tooling according to claim 2, characterized in that: The pressing portion includes two pressing heads, the two pressing heads are arranged at intervals along the width direction of the substrate, and the drainage surface is located between the two pressing heads.
4. The liquid phase epitaxial growth tooling according to claim 3, characterized in that: Each of the pressure heads has a pressing surface on the side facing the substrate. From the end of the pressure head connected to the support portion to the end away from the support portion, the size of the positive projection of the pressure head on the substrate gradually decreases, and the distance between the pressing surface and the substrate gradually increases.
5. The liquid phase epitaxial growth tooling according to claim 1, characterized in that: The drainage surface includes a plane segment and a curved segment, the top of the plane segment is connected to the bottom of the growth surface, and the plane segment and the growth surface are located in the same plane, and the curved segment is connected to one end of the plane segment away from the growth surface.
6. The liquid phase epitaxial growth tooling according to claim 5, characterized in that: The support portion further has a bottom plane on a side facing away from the bracket, the curved surface segment includes a first curved surface and a second curved surface, two ends of the first curved surface are respectively connected to the plane segment and the second curved surface, and are respectively tangent to the plane segment and the second curved surface, and one end of the second curved surface away from the first curved surface is connected to the bottom plane, and is tangent to the bottom plane; Wherein, the first curved surface is concave toward the supporting portion, and the second curved surface is convex toward a direction away from the supporting portion.
7. The liquid phase epitaxial growth tooling according to claim 1, characterized in that: The drainage surface is a plane.
8. The liquid phase epitaxial growth tooling according to claim 1, characterized in that: The liquid phase epitaxial growth tool is used for growing mercury cadmium telluride crystals, and the material of the substrate is silicon.
9. The liquid phase epitaxial growth tooling according to claim 1, characterized in that: The invention also comprises a fixing part, wherein the fixing part is arranged on the bracket and abuts against the top of the substrate.
10. The liquid phase epitaxial growth tooling according to claim 1, characterized in that: The support has a plurality of side surfaces, and each of the side surfaces is provided with the substrate and the support member.